JP2017199876A - Imprint method and manufacturing method of article - Google Patents

Abstract

PROBLEM TO BE SOLVED: To increase gas concentration in a space between a mold and a board efficiently.SOLUTION: An imprint material is supplied from a discharge port for discharging the imprint material to the shot region of a board, gas is supplied from a gas supply port for supplying gas to a space between the board and mold, and then the imprint material supplied to the shot region and the mold are brought into contact in a state where gas is supplied to that space, thus patterning the imprint material in the shot region. Gas is supplied so that a first flow of gas is generated in a direction from the discharge port toward a mold holding part for holding the mold when the shot region is moved from the position where the imprint material is supplied to a position where contact process is performed, and a second flow of gas is generated from the center of the board toward the outer periphery after the movement process.SELECTED DRAWING: Figure 4

Description

  The present invention relates to an imprint method and an article manufacturing method.

  The demand for miniaturization of semiconductor devices and MEMS has advanced, and in addition to conventional photolithographic technology, uncured resin on a wafer (substrate) is molded with a mold and a resin pattern is formed on the wafer. Technology is drawing attention. This technique is also called an imprint technique, and can form a fine structure on the order of several nanometers on a wafer. For example, as one of imprint techniques, there is a photocuring method. In an imprint apparatus employing this photocuring method, first, an ultraviolet curable resin (imprint material) is supplied to a shot area which is an imprint area on a wafer. Next, this resin (uncured resin) is molded by a mold. Then, the resin pattern is formed on the wafer by irradiating ultraviolet rays to cure the resin and then separating it.

  In such an imprint apparatus, when the resin is filled into the fine concavo-convex pattern formed in the mold when the mold and the resin on the substrate are pressed, bubbles remain and an unfilled portion is generated. Due to this, the resin pattern may not be formed normally. Therefore, conventionally, an imprint apparatus has been proposed in which a gap space sandwiched between a mold and a substrate at the time of pressing is filled with a special gas (gas) to suppress the remaining of bubbles. Patent Document 1 discloses an imprint lithography method including a step of transferring a highly soluble or highly diffusible gas to a position close to a viscous liquid (resin) on a substrate.

  As shown in Patent Document 1, in order to obtain the effect of suppressing the remaining bubbles by filling the gap space between the mold and the substrate with a special gas, it is necessary to maintain the gas concentration in the gap space to a certain level. There is. In Patent Document 2, in order to increase the gas concentration in the gap space in a short time, after the resin is supplied to the substrate, gas is supplied when the substrate is moved (scanned) with respect to the mold. Discloses a method for drawing gas.

Special table 2011-514658 gazette Japanese Patent No. 5828626

  In the method disclosed in Patent Document 2, the supply port for supplying gas toward the substrate when the substrate is moved is between the holding portion for holding the mold and the discharge port for discharging the resin. Therefore, after the substrate is moved, the gas supply port may be at a position off the substrate surface. In that case, there is a concern that the gas supplied from the gas supply port may flow to the outside of the substrate. If the gas flows outside the substrate, the gas concentration in the space between the mold and the substrate cannot be increased efficiently.

  Accordingly, an object of the present invention is to efficiently increase the gas concentration in the space between the mold and the substrate.

  An imprint method according to one aspect of the present invention for solving the above-described problems is an imprint method in which a pattern is formed on a substrate using a mold. An imprint material supply step for supplying a print material, a gas supply step for supplying a gas from a gas supply port for supplying a gas to the space between the substrate and the mold, and a state in which the gas is supplied to the space A contact step in which the imprint material supplied to the shot area is brought into contact with the mold, and after the contact step, the imprint material is cured in the shot area to separate the imprint material and the mold. Forming a pattern of the imprint material by the gas supply step from the position where the imprint material is supplied. When the shot area is moved to a position where a contact process is performed, a first gas is supplied so as to generate a first flow of the gas in a direction from the discharge port toward a mold holding unit that holds the mold. Unlike the first flow, the second flow of the gas is generated from the center of the substrate toward the outer periphery when the shot region is at a position where the gas supply step and the contact step are performed. A second gas supply step for supplying a gas.

  The imprint method according to another aspect of the present invention is an imprint method in which a pattern is formed on a substrate using a mold, and the imprint material is ejected from a discharge port for discharging the imprint material to a shot region of the substrate. An imprint material supply step for supplying gas, a gas supply step for supplying gas to a space between the substrate and the mold from a gas supply port for supplying gas, and the shot in a state where gas is supplied to the space Contacting the imprint material supplied to the region with the mold, and after the contacting step, curing the imprint material in the shot region and separating the imprint material and the mold Forming the pattern of the imprint material, and the gas supply step starts from the position where the imprint material is supplied. A first gas supply step of supplying a gas from the first gas supply port between the discharge port and a mold holding unit for holding the mold when the shot region is moved to a position to be performed; and the contact When there is the shot region at a position where a process is performed, the amount of gas supplied from the first gas supply port is made smaller than the amount in the first gas supply step, and the first gas supply port And a second gas supply step for supplying gas by increasing the amount of gas supplied from the second gas supply port close to the center of the substrate to be larger than the amount in the first gas supply step. It is characterized by.

  According to the present invention, the gas concentration in the space between the mold and the substrate can be increased efficiently.

It is the schematic of an imprint apparatus. It is a flowchart of the imprint method. It is the schematic of the conventional imprint apparatus. 1 is a schematic diagram of an imprint apparatus according to Embodiment 1. FIG. It is a figure which shows the positional relationship of a board | substrate, a type | mold, and a gas supply part in Example 1. FIG. In Example 2, it is a figure which shows the positional relationship of a board | substrate, a type | mold, and a gas supply part. In Example 3, it is a figure which shows the positional relationship of a board | substrate, a type | mold, and a gas supply part. In Example 4, it is a figure which shows the positional relationship of a board | substrate, a type | mold, and a gas supply part. It is a figure for demonstrating the manufacturing method of articles | goods.

Example 1
FIG. 1 is a schematic diagram illustrating a configuration of an imprint apparatus 10 according to one aspect of the present invention. The imprint apparatus 10 is a lithography apparatus used in a manufacturing process of a semiconductor device or the like, and performs an imprint process for forming a pattern using a mold on an imprint material on a substrate. In FIG. 1, an X axis, a Y axis, and a Z axis are defined in three axis directions orthogonal to each other.

  The imprint apparatus 10 includes a mold chuck (a mold holding unit) 50 that holds a mold 40 having a pattern surface, and an imprint head 60 that holds the mold chuck 50. In addition, a movable substrate stage 30 having a substrate chuck (substrate holding unit) 21 for holding a substrate 20 such as a wafer and a purge plate 90 having a surface substantially the same height as the surface of the substrate 20 is also provided. The purge plate 90 is held from the substrate stage 30 by a member (not shown).

  The imprint apparatus 10 further includes a dispenser 70 that supplies the imprint material 71 to the substrate 20 by discharging the imprint material 71 from the discharge port. Furthermore, gas supply units 80L and 80R for supplying gas (gas) from the supply port are arranged around the mold 40 toward the space between the mold 40 and the substrate 20. The gas supply unit supplies a gas having at least one of high solubility and high diffusibility, specifically helium, to the imprint material. The gas is not limited to helium, but helium, nitrogen, PFP (pentafluoropropane) which is a condensable gas, or a mixed gas of two or three of them may be used.

  Each unit except the control unit 12 of the imprint apparatus 10 is accommodated in the chamber 11. The control unit 12 controls each unit of the imprint apparatus 10 such as the imprint head 60, the dispenser 70, or the gas supply units 80L and 80R.

  As the imprint material, a curable composition (also referred to as an uncured resin) that cures when given energy for curing is used. As the energy for curing, electromagnetic waves or heat is used. The electromagnetic wave is, for example, light such as infrared light, visible light, or ultraviolet light whose wavelength is selected from a range of 10 nm to 1 mm.

  A curable composition is a composition which hardens | cures by irradiation of light or by heating. Among these, the photocurable composition cured by light contains at least a polymerizable compound and a photopolymerization initiator, and may contain a non-polymerizable compound or a solvent as necessary. The non-polymerizable compound is at least one selected from the group consisting of a sensitizer, a hydrogen donor, an internal release agent, a surfactant, an antioxidant, and a polymer component.

  The imprint material is supplied onto the substrate from the discharge port of the dispenser 70 in the form of droplets or an island or film formed by connecting a plurality of droplets. The imprint material has a viscosity (viscosity at 25 ° C.) of, for example, 1 mPa · s or more and 100 mPa · s or less.

  The imprint head 50 moves while holding the mold chuck 110 to which the mold 40 is fixed. The imprint head 50 moves the mold 40 at least in the vertical direction (Z direction) in the imprint process.

  As the substrate, glass, ceramics, metal, semiconductor, resin, or the like is used, and a member made of a material different from the substrate may be formed on the surface as necessary. Specific examples of the substrate include a silicon wafer, a compound semiconductor wafer, and quartz glass.

  In FIG. 1, there are gaps (spaces) between the substrate 20 and the substrate chuck 21 and the purge plate 90. In addition, the bottom surface of the gap communicates with a space outside the substrate stage 30 and may have a structure through which gas can pass. Further, a member such as a reference mark (not shown) is arranged on the substrate stage 30. There is also a gap between a member such as a reference mark and the purge plate 90, and the bottom surface of this gap may communicate with a space outside the substrate stage 30 to allow gas to pass therethrough. Thus, gas may flow to the outer periphery of the substrate 20.

  Next, an imprint process (method) using the imprint apparatus 10 will be described. A flowchart of the imprint process is shown in FIG. First, the imprint apparatus 10 supplies the imprint material 71 from a discharge port of the dispenser 70 to a shot area on the substrate 20 (imprint material supply process: S1). The shot area supplied with the imprint material 71 is moved under the pattern of the mold 40 held by the mold chuck 50 by the substrate stage 30 (movement process: S2). As shown by the black arrow in FIG. 1, the substrate stage 30 is moved in the X-axis direction so that the shot area is moved from the position where the imprint material 71 is supplied to the position where the following contact process is performed.

  In order to supply gas to the space between the mold 40 and the substrate 20 before or after the start of the moving process, gas is supplied from the gas supply port (first gas supply port) of the supply unit 80L on the dispenser 70 side. (Gas supply step: S3). The supplied gas is dragged to the substrate 20 as the substrate stage 30 moves. At this time, the gas flow is a first flow in the direction from the dispenser 70 toward the die chuck 50 (die 40), as indicated by the arrow in FIG. With this flow, gas can be supplied (filled) into the space between the mold 40 and the substrate 20 (first gas supply step).

  Next, the imprint material supplied to the shot region is brought into contact with the mold 40 in a state where gas is supplied to the space between the substrate 20 and the mold 40 (contact process: S4). During the contact process, the contact between the imprint material and the mold 40 is started from the central portion of the shot region, and the contact region is enlarged from the central portion of the shot region toward the peripheral portion. Then, the imprint material is cured in a state where the imprint material and the mold 40 are in contact with each other, and after curing, the pattern 40 is formed on the substrate 20 by separating the mold 40 from the imprint material (pattern). Formation process: S5). The imprint material may be cured in order from the contact portion between the imprint material and the mold 40, or may be performed in a state where the imprint material in the entire shot region and the mold 40 are in contact with each other. Next, the problem of conventional gas supply will be described with reference to FIG. FIG. 3 shows a state of the conventional imprint apparatus immediately before the contact process. It is assumed that a shot area on the left side of the center of the substrate 20 among a plurality of shot areas arranged on the substrate 20 is imprinted. FIG. 3 shows that the left side shot area of the substrate 20 is moved under the pattern of the mold 40 (position where the imprint material and the mold 40 are brought into contact), and the substrate stage 30 is stopped.

  As shown in FIG. 3, the purge plate 90 is located at a position facing the supply port of the gas supply unit 80L. In the first gas supply step, in order to efficiently draw the gas into the space between the substrate 20 and the mold 40, it is desirable that the heights of the substrate surface and the surface in the vicinity of the outer peripheral edge coincide. For this reason, a purge plate for adjusting the height with the substrate surface is provided on the surface near the outer peripheral end on the substrate stage 30.

  In the path from the supply port of the gas supply unit 80L to the shot region on the substrate 20, there is a gap (concave portion) between the substrate 20 and the purge plate 90. At this time, it is assumed that the gas is still supplied from the gas supply unit 80L on the dispenser 70 side in the same manner as when the substrate stage 30 is moved (first gas supply step). Then, part of the gas leaks into a space outside the substrate stage 30 communicating with the bottom surface of the gap between the substrate 20 and the purge plate 90 through a path indicated by a broken-line arrow in FIG. For this reason, there is a concern that the gas concentration in the space between the pattern of the mold 40 and the substrate 20 cannot be increased efficiently. There is also a concern that the gas consumption will be excessive if gas is supplied in anticipation of leakage to the external space.

  Therefore, in this embodiment, as shown in FIGS. 4 and 5, when the stage is stopped, the gas supply unit for supplying the gas is switched, and the gas is supplied so that the gas flow indicated by the arrow is generated (second gas supply step). ). FIG. 4 shows the state of the imprint apparatus of the present embodiment immediately before the contact process. FIG. 5 is a view of the imprint apparatus as viewed from above, and shows the relationship between the positions of the substrate and the mold, and the positions of the gas supply unit and the dispenser.

  Specifically, gas is supplied to the die chuck 50 (die 40) from the gas supply port (second gas supply port) of the gas supply unit 80R on the side opposite to the dispenser 70 (discharge port). As a result, a second flow of gas in the direction from the center of the substrate toward the outer periphery is generated. The substrate 20 is located at a position facing the supply port of the gas supply unit 80R. There is no gap between the substrate 20 and the purge plate 90 in the path from the supply port of the gas supply unit 80R to the shot region (pattern surface 41 of the mold 40) of the substrate 20 on which imprint processing is performed next. Therefore, gas does not leak from the gap before the gas reaches the space between the mold 40 and the substrate 20. Therefore, gas is supplied to the space between the mold 40 and the substrate 20, and the gas concentration in the space can be maintained high. Further, since it is not necessary to compensate for the gas leakage, the gas supply flow rate from the gas supply unit 80R can be reduced compared to the gas supply flow rate from the gas supply unit 80L. Therefore, gas consumption can be reduced.

  In summary, in this embodiment, in the gas supply process, the shot area is moved from the position where the imprint material is supplied to the position where the contact process is performed. During the moving process, gas is supplied so as to generate a first flow of gas in a direction from the discharge port toward the mold holding unit (first gas supply process). Then, when the shot region is present at the position where the contact step is performed, unlike the first flow, gas is supplied so as to generate a second flow of gas from the center of the substrate toward the outer periphery (first 2 gas supply process). These gas supplies are performed by the control unit 12 controlling the gas supply unit. Note that after the contact between the imprint material and the mold 40 is started, for example, a second flow of gas may be generated during partial contact or curing. Further, the second flow of gas may be generated immediately before the contact between the imprint material and the mold 40 is started. Moreover, it can explain as follows from the viewpoint of the supply port and the supply amount. That is, during the moving process, gas is supplied from the first gas supply port between the discharge port and the mold holding unit (first gas supply step). And when the said shot area | region exists in the position where the said contact process is performed, the quantity of the gas supplied from a 1st gas supply port is made smaller than the quantity in a 1st gas supply process. Further, the amount of gas supplied from the second gas supply port closer to the center of the substrate than the first gas supply port is made larger than the amount in the first gas supply step to supply gas (second gas). Supply process).

  As shown in FIG. 5, the imprint apparatus 10 is also provided with gas supply units 80 </ b> T and 80 </ b> B around the mold 40 (the mold chuck 50). The gas supply units 80L, 80R, 80T, and 80B are configured along each side of the mold 40 so as to surround the periphery of the mold 40. The gas supply units 80L, 80R, 80T, and 80B can control the gas supply flow rates independently. There is only a part of the purge plate 90 at a position where the gas supply units 80T and 80B face each other. There is no gap between the substrate 20 and the purge plate 90 in a part of the path from the gas supply units 80T and 80B to the shot region (pattern surface 41 of the mold 40) of the substrate 20, and there is a gap in part.

  In the first gas supply step, it is desirable not to supply gas from the gas supply units 80T, 80B, 80R. However, for example, after the shot region is moved to the position where the contact process is performed, the gas supply from the gas supply units 80T, 80B, and 80R is performed in order to maintain the gas concentration in the space between the mold 40 and the substrate 20. It may be performed from the time when the substrate stage 30 is moved. Even at this time, since the gas is dragged by the substrate 20, the gas flow is directed from the dispenser 70 toward the mold chuck 50.

  In the second gas supply step, it is desirable to supply gas from the gas supply unit 80R and stop supplying gas from the other gas supply units 80L, 80T, and 80B. However, if the gas flow from the center of the substrate 20 toward the outer periphery can be formed, the gas supply flow rates of the gas supply units 80T, 80B, and 80L are not necessarily zero.

  For example, if “the gas supply flow rate of the gas supply unit 80T” ≈ “the gas supply flow rate of the gas supply unit 80B”, the gas flow in the Y direction in FIG. 5 is canceled. At this time, if “the gas supply flow rate of the gas supply unit 80L” <“the gas supply flow rate of the gas supply unit 80R”, a gas flow from the center of the substrate 20 toward the outer peripheral portion is formed. By doing so, the gas can be supplied to the space between the mold 40 and the substrate 20 without leaking from the gap while the gas reaches just below the pattern 41. At this time, if the total gas supply flow rate in the second gas supply process is smaller than the total gas supply flow rate in the first gas supply process by switching the gas flow in the first and second gas supply processes, Consumption can be reduced.

(Example 2)
With reference to FIG. 6, an imprint apparatus according to the second embodiment will be described. In the second embodiment, a case will be described in which an imprint process is performed on a shot area at a position different from that of the first embodiment and a shot area on the lower left side of the substrate 20. A description of parts common to the first embodiment will be omitted. FIG. 6 is a view of the imprint apparatus as viewed from above, and shows the relationship between the positions of the substrate and the mold, and the positions of the gas supply unit and the dispenser. FIG. 6 shows a state in which the shot area is moved under the pattern 41 of the mold 40 and the substrate stage 30 is stopped in order to perform the imprint process for the lower left shot area of the substrate 20.

  There is a purge plate 90 at a position facing the gas supply units 80L and 80B. There is a gap between the substrate 20 and the purge plate 90 in the path from the gas supply nozzles 80L and 80B to the shot region of the substrate 20. On the other hand, the substrate 20 is located at a position where the gas supply units 80T and 80R face each other, and there is no gap between the substrate 20 and the purge plate 90 in the path from the gas supply units 80T and 80R to the shot region of the substrate 20.

  At this time, it is assumed that the gas is still supplied from the gas supply unit 80L on the dispenser 70 side in the same manner as when the substrate stage 30 is moved (first gas supply step). As a result, part of the gas leaks into the space outside the substrate stage 30 communicating with the bottom surface of the gap between the substrate 20 and the purge plate 90 as described above. For this reason, there is a concern that the gas concentration in the space between the mold 40 and the substrate 20 cannot be increased efficiently.

  Therefore, after the substrate stage 30 is stopped (second gas supply step), the supply portion (supply port) for supplying the gas is switched so that the gas can flow from the center of the substrate 20 toward the outer circumference as indicated by the white arrow. It is desirable to supply gas. Specifically, it is desirable to supply gas only from the gas supply units 80T and 80R and not supply gas from the other gas supply units 80L and 80B. Thereby, a gas flow from the center of the substrate 20 toward the outer periphery can be formed. By doing so, the gas can be supplied to the space between the mold 40 and the substrate 20 without leaking from the gap while the gas reaches the pattern 41 directly below the supply port. Therefore, the gas concentration in the space between the mold 40 and the substrate 20 can be increased efficiently.

  In the second gas supply step, the gas supply flow rates of the gas supply units 80B and 80L are not necessarily zero. Specifically, the gas supply flow rate of the gas supply unit 80L <the gas supply flow rate of the gas supply unit 80R and the gas supply flow rate of the gas supply unit 80B <the gas supply flow rate of the gas supply unit 80T may be satisfied. As a result, a gas flow from the center of the substrate 20 toward the outer periphery can be formed. At this time, if the total gas supply flow rate is reduced before and after switching the gas flow direction, the gas consumption can also be reduced.

(Example 3)
A modification of the imprint apparatus according to the second embodiment will be described with reference to FIG. The present embodiment is different from the second embodiment in that the gas supply units 80L, R, T, and B are each divided into three. A description of parts common to the second embodiment will be omitted. In the present embodiment, a case where the same imprint process as that in the second embodiment is performed will be described. FIG. 7 is a view of the imprint apparatus as viewed from above, and shows the relationship between the positions of the substrate and the mold, and the positions of the gas supply unit and the dispenser. FIG. 7 shows a state where the shot area is moved under the pattern 41 of the mold 40 and the substrate stage 30 is stopped in order to perform the imprint process of the shot area on the lower left side of the substrate 20.

  Gas supply sections 80L1, L2, and L3 are arranged along the left side of the mold 40 on the paper surface of FIG. Further, gas supply units 80R1, R2, and R3 are arranged along the right side of the mold 40 on the paper surface of FIG. The gas supply units 80T1, T2, and T3 are arranged along the upper side of the mold 40 on the paper surface of FIG. Gas supply sections 80B1, B2, and B3 are arranged along the lower side of the mold 40 on the paper surface of FIG. Each gas supply unit is controlled independently, and the gas supply flow rate can be controlled individually.

  By providing a large number of gas supply units as in this embodiment, the gas flow rate from the gas supply unit (supply port) when the stage is stopped can be controlled more finely, so that the gas flow from the center of the substrate 20 toward the outer periphery is easier. Can be formed. Specifically, in the second gas supply step, as shown in FIG. 7, gas is supplied from the gas supply units 80T2, T3, 80R2, and R3. The substrate 20 is disposed at a position where the gas supply units 80T2, T3, 80R2, and R3 are opposed to each other. At the center of For this reason, the gas does not leak from the gap between the substrate 20 and the purge plate 90 before the gas reaches just below the pattern 41 of the mold 40 from the supply port. Therefore, gas can be supplied to the space between the mold 40 and the substrate 20, and the gas concentration in the space between the mold 40 and the substrate 20 can be increased efficiently. Further, gas consumption can be reduced more easily.

Example 4
With reference to FIG. 8, an imprint apparatus according to the fourth embodiment will be described. In the fourth embodiment, a case will be described in which an imprint process is performed on a shot area located at a position different from those in the first and second embodiments and a shot area located on the lower right side of the substrate 20. FIG. 8 is a view of the imprint apparatus as viewed from above, and shows the relationship between the positions of the substrate and the mold, and the positions of the gas supply unit and the dispenser. FIG. 8 shows a state in which the shot area is moved under the pattern 41 of the mold 40 and the substrate stage 30 is stopped in order to perform the imprint process of the lower right shot area of the substrate 20.

  The purge plate 90 is located at a position facing the gas supply units 80R and 80B, and there is a gap between the substrate 20 and the purge plate 90 in the path from the gas supply units 80R and 80B to the shot region of the substrate 20. On the other hand, there is a substrate 20 at a position where the gas supply units 80L and 80T face each other, and there is no gap between the substrate 20 and the purge plate 90 in the path from the gas supply units 80L and 80T to the shot region of the substrate 20.

  Therefore, after the stage is stopped (second gas supply step), the supply port (nozzle) for supplying the gas is switched so that the gas flows from the center of the substrate 20 toward the outer periphery as indicated by the white arrow in FIG. It is desirable to supply gas. Specifically, it is desirable to supply gas only from the gas supply units 80L and 80T and not supply gas from the other gas supply units 80B and 80R. Thereby, a gas flow from the center of the substrate 20 toward the outer periphery can be formed. In the second gas supply step, the gas supply amount may be controlled so that the supply amount is equal to or less than the supply amount of the gas supplied from the gas supply unit 80L in the first gas supply step. For example, in the second gas supply step, the supply amount of the gas supplied from each of the gas supply units 80L and 80T is set to half the supply amount of the gas supplied from the gas supply unit 80L in the first gas supply step. And In this case, the amount of gas supplied from the gas supply unit 80L is smaller in the second gas supply step than in the first gas supply step.

(Example 5)
When imprinting the right half shot region including the center of the substrate 20 on the paper surface of FIG. 8, the gas supply unit in the second gas supply step is the same as when moving the stage (first gas supply step). The gas may be supplied from 80L. At least half of the area of the gas supply unit 80L (supply port) is at a position facing the substrate 20. Therefore, the gas flow is a gas flow from the gas supply unit 80L toward the imprint region in the vicinity of the outer periphery of the substrate 20. Therefore, the amount of gas leaking from the gap between the substrate 20 and the purge plate 90 is not larger than the state shown in FIG. Therefore, when performing the imprint process for the shot region of the right half of the substrate 20 on the paper surface of FIG. 8, the gas supply (flow) is not necessarily switched between the first gas supply step and the second gas supply step. Also good. Therefore, switching of the supply unit (supply port) for supplying gas in each gas supply process may be performed when imprinting the shot region in the left half of the substrate 20 when the substrate is viewed from above. This can reduce the burden associated with gas flow rate and flow switching and optimization.

  As described in the first to fifth embodiments, the supply unit (supply port) that supplies gas in the second gas supply process can be changed depending on the position of the shot region where the imprint process is performed on the substrate. In other words, the availability of the gas supply unit can be determined according to the relative position between the gas supply unit and the shot area of the substrate, and can be selectively used.

  For example, in Examples 1 to 3, when the shot region is moved to a position where the contact process is performed, the dispenser 70 (discharge port side) (downstream side in the direction from the discharge port toward the mold chuck) with respect to the center of the substrate 20. The imprint process is performed on the shot area located at (). In that case, in the second gas supply step, the supply of gas from the supply unit 80L that has supplied the gas in the first gas supply step is stopped. Then, a supply unit closer to the center of the substrate than the supply unit 80L is selected, and gas is supplied from the selected gas supply unit.

  In the fourth embodiment, when the shot area is moved to a position where the contact process is performed, an imprint process is performed on the shot area located on the opposite side of the center of the substrate 20 from the dispenser 70 side (discharge port side). . In that case, in the second gas supply step, the supply unit 80T that has not supplied the gas in the first gas supply step is selected, and the gas from the supply unit 80T is supplied. Further, the amount of gas supplied from the supply unit 80L that has supplied the gas in the first gas supply step is reduced.

  In addition, table data in which the position of the shot area on the substrate 20 on which the imprint process is to be performed and the gas supply unit that supplies gas in the second supply process may be prepared in advance. In the second supply step, the table data may be used to select a supply unit to which a gas is to be supplied from among the plurality of gas supply units and supply the gas.

[Production Method]
The pattern of the cured product formed using the imprint apparatus is used permanently on at least a part of various articles or temporarily used when manufacturing various articles. The article is an electric circuit element, an optical element, a MEMS, a recording element, a sensor, or a mold. Examples of the electric circuit elements include volatile or nonvolatile semiconductor memories such as DRAM, SRAM, flash memory, and MRAM, and semiconductor elements such as LSI, CCD, image sensor, and FPGA. Examples of the mold include an imprint mold.

  The pattern of the cured product is used as it is as a constituent member of at least a part of the article or temporarily used as a resist mask. After etching or ion implantation or the like is performed in the substrate processing step, the resist mask is removed.

  Next, a specific method for manufacturing an article will be described. As shown in FIG. 9A, a substrate 1z such as a silicon wafer on which a workpiece 2z such as an insulator is formed is prepared. A printing material 3z is applied. Here, a state is shown in which the imprint material 3z in the form of a plurality of droplets is applied on the substrate.

  As shown in FIG. 9B, the imprint mold 4z is made to face the imprint material 3z on the substrate with the side having the concave / convex pattern formed thereon. As shown in FIG. 9C, the substrate 1z provided with the imprint material 3z is brought into contact with the mold 4z, and pressure is applied. The imprint material 3z is filled in a gap between the mold 4z and the workpiece 2z. In this state, when light is irradiated as energy for curing through the mold 4z, the imprint material 3z is cured.

  As shown in FIG. 9D, when the imprint material 3z is cured and then the mold 4z and the substrate 1z are separated, a pattern of a cured product of the imprint material 3z is formed on the substrate 1z. This cured product pattern has a shape in which the concave portion of the mold corresponds to the convex portion of the cured product, and the concave portion of the mold corresponds to the convex portion of the cured product, that is, the concave / convex pattern of the die 4z is transferred to the imprint material 3z. It will be done.

  As shown in FIG. 9 (e), when etching is performed using the pattern of the cured product as an anti-etching mask, the portion of the surface of the workpiece 2z where there is no cured product or remains thin is removed, and the grooves 5z and Become. As shown in FIG. 9 (f), when the pattern of the cured product is removed, an article in which the groove 5z is formed on the surface of the workpiece 2z can be obtained. Although the cured product pattern is removed here, it may be used as, for example, a film for interlayer insulation contained in a semiconductor element or the like, that is, a constituent member of an article without being removed after processing. According to the above-described method for manufacturing an article, it is possible to manufacture an article of higher quality than before.

  As mentioned above, although preferable embodiment of this invention was described, this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

Claims (6)

In an imprint method for forming a pattern on a substrate using a mold,
An imprint material supply step of supplying an imprint material from a discharge port for discharging the imprint material to a shot region of the substrate;
A gas supply step of supplying gas from a gas supply port for supplying gas to a space between the substrate and the mold;
A contact step of contacting the mold with the imprint material supplied to the shot region in a state where gas is supplied to the space;
Forming the pattern of the imprint material by curing the imprint material in the shot region and separating the imprint material and the mold after the contact step;
The gas supply step includes
When the shot area is moved from the position where the imprint material is supplied to the position where the contact process is performed, the first flow of the gas in the direction from the discharge port toward the mold holding unit holding the mold A first gas supply step of supplying a gas so as to generate
Unlike the first flow, when the shot region is at a position where the contact process is performed, the first gas is supplied so as to generate the second flow of the gas from the center of the substrate toward the outer periphery. And an imprinting method comprising: a gas supply step. In an imprint method for forming a pattern on a substrate using a mold,
An imprint material supply step of supplying an imprint material from a discharge port for discharging the imprint material to a shot region of the substrate;
A gas supply step of supplying gas from a gas supply port for supplying gas to a space between the substrate and the mold;
A contact step of contacting the mold with the imprint material supplied to the shot region in a state where gas is supplied to the space;
Forming the pattern of the imprint material by curing the imprint material in the shot region and separating the imprint material and the mold after the contact step;
The gas supply step includes
The first gas supply port located between the discharge port and a mold holding unit that holds the mold when the shot region is moved from a position where the imprint material is supplied to a position where the contact process is performed. A first gas supply step of supplying gas from
When the shot region is at a position where the contact step is performed, the amount of gas supplied from the first gas supply port is made smaller than the amount in the first gas supply step, and the first gas supply A second gas supply step of supplying a gas by increasing the amount of gas supplied from the second gas supply port closer to the center of the substrate than the port than the amount in the first gas supply step; An imprinting method comprising:   The shot area is a shot area located on the discharge port side with respect to the center of the substrate when the shot area is moved to a position where the contact process is performed. The imprint method described in 1. In the first gas supply step, supply of gas from the second gas supply port is stopped,
The imprint method according to claim 2, wherein in the second gas supply step, supply of gas from the first gas supply port is stopped.   5. The gas supply port according to claim 1, wherein, in the second gas supply step, a gas supply port is changed according to a position of the shot region where the contact step is performed on the substrate. The imprint method according to item. Forming a pattern on a substrate using the imprint method according to any one of claims 1 to 5,
Processing the substrate on which the pattern has been formed in the step;
A method for producing an article comprising: