JP2017108179A - 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Download PDF

Info

Publication number
JP2017108179A
JP2017108179A JP2017043780A JP2017043780A JP2017108179A JP 2017108179 A JP2017108179 A JP 2017108179A JP 2017043780 A JP2017043780 A JP 2017043780A JP 2017043780 A JP2017043780 A JP 2017043780A JP 2017108179 A JP2017108179 A JP 2017108179A
Authority
JP
Japan
Prior art keywords
silicon carbide
main surface
single crystal
orientation flat
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2017043780A
Other languages
English (en)
Japanese (ja)
Other versions
JP2017108179A5 (enrdf_load_stackoverflow
Inventor
勉 堀
Tsutomu Hori
勉 堀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Priority to JP2017043780A priority Critical patent/JP2017108179A/ja
Publication of JP2017108179A publication Critical patent/JP2017108179A/ja
Publication of JP2017108179A5 publication Critical patent/JP2017108179A5/ja
Priority to JP2020122042A priority patent/JP6930640B2/ja
Pending legal-status Critical Current

Links

Images

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
JP2017043780A 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Pending JP2017108179A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2017043780A JP2017108179A (ja) 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP2020122042A JP6930640B2 (ja) 2017-03-08 2020-07-16 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2017043780A JP2017108179A (ja) 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP2015228517 Division 2015-11-24 2015-11-24

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2020122042A Division JP6930640B2 (ja) 2017-03-08 2020-07-16 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2017108179A true JP2017108179A (ja) 2017-06-15
JP2017108179A5 JP2017108179A5 (enrdf_load_stackoverflow) 2018-08-16

Family

ID=59060158

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2017043780A Pending JP2017108179A (ja) 2017-03-08 2017-03-08 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2017108179A (enrdf_load_stackoverflow)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2021153351A1 (enrdf_load_stackoverflow) * 2020-01-29 2021-08-05
US11249027B2 (en) * 2018-10-15 2022-02-15 Showa Denko K.K. SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer
JP2022134459A (ja) * 2021-03-03 2022-09-15 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP2023134793A (ja) * 2019-05-17 2023-09-27 ウルフスピード インコーポレイテッド 緩和された正の湾曲を有する炭化ケイ素ウェーハを処理するための方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008535761A (ja) * 2005-04-07 2008-09-04 クリー インコーポレイテッド 歪み、反り、及びｔｔｖが少ない７５ミリメートル炭化珪素ウェハ

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008535761A (ja) * 2005-04-07 2008-09-04 クリー インコーポレイテッド 歪み、反り、及びｔｔｖが少ない７５ミリメートル炭化珪素ウェハ

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
"Cree Silicon Carbide Substrates and Epitaxy", CREE社2013年SICウェハカタログ(MAT-CATALOG.00Q), JPN6019013802, 2013, US, pages 1 - 17, ISSN: 0004268561 *
A.A. BURK ET AL.: "SiC Epitaxial Layer Growth in a 6×150 mm Warm-Wall Planetary Reactor", MATERIALS SCIENCE FORUM, vol. 717-720, JPN6019013800, 2012, CH, pages 75 - 80, XP055506770, ISSN: 0004268563, DOI: 10.4028/www.scientific.net/MSF.717-720.75 *
J. QUAST ET AL.: "High Quality 150 mm 4H SiC wafers for Power Device Production", MATERIALS SCIENCE FORUM, vol. Vols. 821-823, JPN6019044974, 2015, CH, pages 56 - 59, ISSN: 0004268562 *
Y. GAO ET AL.: "High Quality 100 mm 4H-SiC Substrate", MATERIALS SCIENCE FORUM, JPN6019013801, 2015, CH, pages 51 - 55, ISSN: 0004268564 *
土谷秀一, 外２名: "４Ｈ−ＳｉＣ エピタキシャル成長における拡張欠陥の挙動", J. VAC. SOC. JPN., vol. 54, no. 6, JPN6019013803, 2011, JP, pages 353 - 361, ISSN: 0004268565 *

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11249027B2 (en) * 2018-10-15 2022-02-15 Showa Denko K.K. SiC substrate evaluation method and method for manufacturing SiC epitaxtal wafer
JP2023134793A (ja) * 2019-05-17 2023-09-27 ウルフスピード インコーポレイテッド 緩和された正の湾曲を有する炭化ケイ素ウェーハを処理するための方法
JPWO2021153351A1 (enrdf_load_stackoverflow) * 2020-01-29 2021-08-05
CN115003866A (zh) * 2020-01-29 2022-09-02 住友电气工业株式会社 碳化硅外延衬底及碳化硅半导体器件的制造方法
CN115003866B (zh) * 2020-01-29 2024-05-03 住友电气工业株式会社 碳化硅外延衬底及碳化硅半导体器件的制造方法
JP7632313B2 (ja) 2020-01-29 2025-02-19 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP2022134459A (ja) * 2021-03-03 2022-09-15 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法
JP7629755B2 (ja) 2021-03-03 2025-02-14 株式会社Ｓｃｒｅｅｎホールディングス 熱処理装置および熱処理方法

Similar Documents

Publication Publication Date Title
US10998406B2 (en) Silicon carbide single crystal substrate, silicon carbide epitaxial substrate, and method of manufacturing silicon carbide semiconductor device
JP6597381B2 (ja) 炭化珪素基板の製造方法、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
US10121865B2 (en) Silicon carbide epitaxial substrate and method of manufacturing silicon carbide semiconductor device
JP2017108179A (ja) 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
WO2017138247A1 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JPWO2018142744A1 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP7632313B2 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JPWO2018142668A1 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP7415558B2 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6930640B2 (ja) 炭化珪素単結晶基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
CN112074928B (zh) 碳化硅外延衬底和制造碳化硅半导体器件的方法
JP2017050446A (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP7400715B2 (ja) 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
JP6468291B2 (ja) 炭化珪素エピタキシャル基板、炭化珪素エピタキシャル基板の製造方法および炭化珪素半導体装置の製造方法
US10526699B2 (en) Silicon carbide epitaxial substrate and method for manufacturing silicon carbide semiconductor device
JP2015063429A (ja) 炭化珪素半導体基板および炭化珪素半導体基板を備えた炭化珪素半導体装置

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20180703

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20180703

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20190408

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20190507

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20190701

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20191126

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20200116

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20200526