JP2017105660A - Manufacturing apparatus of semiconductor single crystal rod - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing apparatus of a semiconductor single crystal rod capable of preventing surely damage of a chamber, even when drop of melt in a molten zone occurs by a discharge trouble of an induction heating coil, an earthquake or the like.SOLUTION: In a manufacturing apparatus of a semiconductor single crystal rod by FZ method, having at least a chamber for storing a raw material crystal rod and a crystallization side single crystal rod, an induction heating coil for forming a molten zone by heating and melting a part of the raw material crystal rod, and a high-frequency oscillation machine for supplying power to the induction heating coil, a pan for receiving melt dropped from the molten zone is provided in the chamber.SELECTED DRAWING: Figure 1

Description

  The present invention is an FZ method (floating zone method or floating zone melting) in which a raw material crystal rod is heated and melted by an induction heating coil to form a melting zone, and the crystallization side semiconductor single crystal rod is grown by moving the melting zone. The present invention relates to an apparatus for manufacturing a semiconductor single crystal rod by the method.

  A semiconductor single crystal rod manufacturing apparatus and manufacturing method used in the conventional FZ method will be described with reference to FIG. A semiconductor single crystal rod manufacturing apparatus 115 shown in FIG. 2 includes, for example, a chamber 112 that accommodates a raw material crystal rod 101 and a crystallization side single crystal rod (grown single crystal rod) 102, a raw material crystal rod 101, and a crystallization side single crystal. An induction heating coil 107 serving as a heating source for forming a melting zone (floating zone) 111 between the crystal rods 102, a high-frequency oscillator 113 that supplies power to the induction heating coil 107, and the raw material crystal rod 101 are held. An upper holder 104 for rotating and moving the raw material crystal rod 101, a lower holder 106 for holding the crystallization side single crystal rod 102, and a crystallization side single crystal rod 102. A lower shaft 105 for rotating and moving is provided.

  The induction heating coil 107 is cooled by passing cooling water through the inside thereof. Then, a part of the raw material crystal rod 101 is melted by the induction heating coil 107 to form the melting zone 111, and the upper raw material crystal rod 101 and the lower crystallization side single crystal rod 102 are connected to the induction heating coil 107. The crystallization-side single crystal rod 102 is grown by moving the melting zone 111 in the axial direction by moving in the axial direction. In such a floating melting zone semiconductor manufacturing method, the melting zone 111 and its vicinity are imaged with a CCD camera, the image is processed to measure a geometric amount, and a control output amount is calculated according to the measured value. A semiconductor single crystal rod manufacturing apparatus that adjusts the power supplied to the induction heating coil 107 and the movement speed and rotation speed of the crystallization-side semiconductor single crystal rod 102 and the raw crystal rod 101 fixed to the moving rotation axis; A manufacturing method is known (patent documents 1 to 3).

  In recent years, there has been an increasing demand for large-diameter wafers in the production of semiconductor single crystal rods by the FZ method, and it has become necessary to stably manufacture large-diameter wafers having a diameter of 150 mm or exceeding 200 mm in silicon single crystals.

  In a large-diameter crystal, it is necessary to melt more raw materials than before and maintain the melt in the melting zone. Therefore, the melt amount in the melting zone is greatly increased as compared with the past, and the heat capacity is also increased. It is also essential to increase the melt power from the induction heating coil. For this reason, a large amount of electric power is supplied to the induction heating coil, and discharge frequently occurs in the slit portion of the induction heating coil. Once a discharge is generated in the induction heating coil, the high frequency output is stopped, so the melt in the melting zone may drop. In addition, when a discharge occurs in the induction heating coil, the induction heating coil melts, and cooling water may leak from there.

Japanese Patent Publication No. 5-71552 Japanese Patent Publication No. 6-51598 Japanese Patent Publication No. 6-57630

  As the diameter has increased in recent years, the amount of melt in the melting zone during crystal growth has increased. Therefore, serious damage to the semiconductor single crystal rod manufacturing equipment such as melting trouble of the induction heating coil, dripping of melt in the melting zone and contact with the bottom of the chamber and melting of the water-cooled chamber occurs. Was.

  Moreover, in the chamber, water leakage may occur from the induction heating coil or other cooling water lines that are cooled by water due to a discharge trouble of the induction heating coil. When these leaked water comes into contact with the melt in the melting zone, water vapor is generated and the pressure in the chamber rises rapidly, which may damage the chamber. In addition, when water leaks in the chamber and water accumulates in the lower part of the chamber, the melt in the melting zone dripped into the chamber due to the discharge of the induction heating coil, earthquake, or other factors. There was a possibility that water contacted, water vapor was generated, and a rapid pressure increase occurred. In particular, when a high-temperature melt comes into contact with the latter water pool, it is necessary to consider the possibility of a steam explosion due to a rapid pressure increase.

  Furthermore, since the heat capacity of the melt increases as the amount of melt in the melting zone during crystal growth increases due to the increase in diameter described above, the heat energy given to the water by contact with leaked water also increases. Therefore, the risk of the sudden increase in pressure as described above has been increased.

  When the present inventors diligently researched the conventional semiconductor single crystal rod manufacturing apparatus by the FZ method, when the melt in the melting zone dripped, the structure easily reached the bottom of the chamber. I understood. In addition, in the conventional semiconductor single crystal rod manufacturing apparatus using the FZ method, detection of cooling water leakage in the chamber relies on the operator's visual observation, and early detection is difficult. Therefore, when there is a water leak in the chamber, there is a potential risk of a sudden pressure increase in the chamber and the resulting damage to the chamber.

  The present invention has been made in view of the above-described problems, and even when melt dripping of the melting zone occurs due to a discharge trouble of an induction heating coil or an earthquake, damage to the chamber can be reliably prevented. An object is to provide an apparatus for manufacturing a semiconductor single crystal rod.

In order to achieve the above object, the present invention includes at least a chamber for accommodating a raw material crystal rod and a crystallization side single crystal rod, and induction heating for forming a melting zone by heating and melting a part of the raw material crystal rod. An apparatus for manufacturing a semiconductor single crystal rod by an FZ method having a coil and a high-frequency oscillator for supplying electric power to the induction heating coil,
Provided is a semiconductor single crystal rod manufacturing apparatus characterized in that a receiving tray for receiving the melt dropped from the melting zone is provided in the chamber.

  Thus, if it is the manufacturing apparatus of the semiconductor single crystal rod by the FZ method which equipped the saucer in the chamber, the dripped melt can be accommodated in a saucer and it can prevent that a melt contacts a bottom part of a chamber. Therefore, damage to the chamber due to melt can be reliably prevented.

  At this time, it is preferable that the manufacturing apparatus for the semiconductor single crystal rod further includes a water leakage sensor for detecting water leakage in the chamber.

  Thus, if the semiconductor single crystal rod manufacturing apparatus is further equipped with a water leakage sensor, it can be detected early when cooling water leaks in the chamber, and appropriate measures such as repair of the manufacturing apparatus can be taken. Can be done immediately. Furthermore, by providing both a saucer that receives the melt in the chamber and a water leak sensor, it is possible to more reliably prevent contact between the cooling water and the high-temperature melt, and a sudden pressure increase in the chamber occurs. The risk of doing this can be made almost zero.

  At this time, the tray is preferably made of a material having a melting point higher than that of the raw material crystal rod.

  If it is a saucer which consists of such a high melting point material, the melt dripped from the fusion | melting zone can be accommodated reliably, and the contact to the chamber of a melt can be prevented more reliably.

  As described above, according to the present invention, damage to the chamber due to dripping of the melt from the melting zone can be reliably prevented in the semiconductor single crystal rod manufacturing apparatus by the FZ method. In addition, the risk of sudden pressure rise in the chamber that can occur if cooling water leaks and melt dripping overlap should be almost zero, making it possible to manufacture semiconductor single crystal rods safely. It becomes.

It is the schematic which shows an example of the manufacturing apparatus of the semiconductor single crystal stick | rod by FZ method of this invention. It is the schematic which shows an example of the manufacturing apparatus of the semiconductor single crystal rod by the conventional FZ method.

  Hereinafter, the present invention will be described in detail as an example of an embodiment with reference to the drawings, but the present invention is not limited thereto.

  As described above, in the conventional apparatus for manufacturing a semiconductor single crystal rod by the FZ method, when melt in the melting zone is dropped due to a discharge trouble of an induction heating coil or an earthquake, the melt reaches the bottom of the chamber, and the chamber The chamber may be damaged by melting.

  Further, in the conventional apparatus for manufacturing a semiconductor single crystal rod by the FZ method, detection of cooling water leakage in the chamber relies on the operator's visual observation. However, from the viewpoint of heat insulation and heat insulation, the chamber has a structure that allows only a part of the interior to be confirmed by the operator, and it has been difficult to reliably find a water leak.

  The present inventors have found that there is a possibility that the hot melt reaches the water accumulated at the bottom of the chamber due to the leakage of cooling water, the pressure in the chamber rapidly increases due to water vapor, and the chamber is damaged. In order to prevent damage to the chamber by providing a melt tray at the bottom of the melting zone, and to detect a coolant leak in the chamber at an early stage, a leak sensor is installed in the chamber to detect the leak. In such a case, the present inventors have found that the possibility of a sudden pressure increase can be made almost zero by taking appropriate measures such as turning off the power, and the present invention has been completed.

  Below, the manufacturing apparatus of the semiconductor single crystal rod of this invention is first demonstrated in detail with reference to FIG.

  FIG. 1 shows a schematic view of an apparatus for producing a semiconductor single crystal rod according to the present invention. The semiconductor single crystal rod manufacturing apparatus 15 includes, for example, a chamber 12 that houses at least the raw material crystal rod 1 and the crystallization side single crystal rod (grown single crystal rod) 2, and the raw material crystal rod 1 and the crystallization side single crystal. To hold an induction heating coil 7 as a heating source for forming a melting zone (floating zone) 11 between the rods 2, a high-frequency oscillator 13 for supplying power to the induction heating coil 7, and the raw crystal rod 1. The upper holder 4, the upper shaft 3 for rotating and moving the raw crystal rod 1, the lower holder 6 for holding the crystallization side single crystal rod 2, and the crystallization side single crystal rod 2 are rotated. -It has the lower shaft 5 for moving. Up to this point, the apparatus is substantially the same as a general semiconductor single crystal rod manufacturing apparatus using the FZ method.

  In the semiconductor single crystal rod manufacturing apparatus 15 of the present invention, a receiving tray 21 that accommodates when melt is dropped from the melting zone 11 is disposed in the chamber, preferably above the bottom of the chamber. The tray 21 is preferably made of a material having a melting point higher than the melting point of the molten metal (raw crystal rod), particularly a high melting point metal. For example, if the semiconductor single crystal rod manufacturing apparatus 15 is a silicon single crystal manufacturing apparatus, it can be a tray made of molybdenum (Mo) having a higher melting point than silicon. In addition to molybdenum, tungsten (W), which is a metal having a higher melting point than silicon, can also be used as a material for the tray. Furthermore, a nonmetallic material having a melting point higher than that of silicon such as quartz, graphite, and ceramics can be used.

  In addition, it is preferable to use a tray 21 having a capacity larger than the volume of the melt in the melting zone. Further, the receiving tray 21 is preferably a circular receiving tray having a larger diameter than the largest portion of the melting zone 11 and is preferably disposed below the melting zone 11. Thus, even if the melt is dripped, the high melting point receiving tray 21 having a sufficient capacity reliably prevents the melt from reaching the bottom of the chamber. The shape of the tray 21 is preferably circular in plan view, but is not limited thereto.

  Thus, by arranging the tray 21 in the chamber, even if water leaks at the bottom of the chamber, it is possible to prevent a sudden increase in pressure inside the chamber due to contact between the high-temperature melt and water. .

  In the semiconductor single crystal rod manufacturing apparatus 15 of the present invention, a water leakage sensor 20 for detecting water leakage is further provided at the bottom of the chamber 12. As the water leakage sensor 20, a resistance type water leakage sensor or a photoelectric water leakage sensor can be used. The water leakage sensor 20 is preferably provided at least on the bottom surface of the chamber 12 so that even a slight water leakage can be detected. However, the present invention is not limited to this, and it can be arranged at a position where water leakage is easily detected in the chamber, for example, below the induction heating coil 7 or below the cooling water circulation path. Furthermore, you may arrange | position in these several positions.

  Next, a method for manufacturing a semiconductor single crystal rod using the semiconductor single crystal rod manufacturing apparatus 15 of the present invention as described above will be described below.

  First, the raw crystal rod 1 is held on the upper holder 4 of the upper shaft 3 installed in the chamber 12. On the other hand, a single crystal seed (seed crystal) 9 having a small diameter is held by the lower holder 6 of the lower shaft 5 positioned below the raw crystal rod 1. Next, the raw crystal rod 1 is heated and melted by the induction heating coil 7 through the electrode 8 by the high frequency oscillator 13 and fused to the seed crystal 9. Thereafter, the single crystal grown by forming the narrowed portion 10 by seed drawing is made dislocation-free.

  Then, while rotating the upper shaft 3 and the lower shaft 5, the raw material crystal rod 1 and the crystallization side single crystal rod 2 are lowered to form a melting zone 11 between the raw material crystal rod 1 and the crystallization side single crystal rod 2. Then, the melting zone 11 is moved to the upper end of the raw crystal rod 1 to perform zoning, and the crystallization side single crystal rod 2 is grown.

  In the manufacturing process of the semiconductor single crystal rod described above, even when the melt is dropped from the melting zone, the melt can be received by the receiving tray 21, so that the melt is reliably prevented from reaching the bottom of the chamber.

  Furthermore, if the coolant leaks during the manufacturing process of the semiconductor single crystal rod, the leak sensor 20 detects the leak, issues a leak alarm, and notifies the operator. By doing in this way, appropriate measures, such as stopping manufacture of a semiconductor single crystal stick and cutting off electricity, can be implemented immediately, and an apparatus can be stopped safely. The semiconductor single crystal rod manufacturing apparatus may be stopped manually by an operator or automatically stopped.

  By constructing the semiconductor single crystal rod manufacturing apparatus with the above-described tray and water leakage sensor, damage to the bottom of the chamber due to melt dripped from the melting zone can be prevented, and at the bottom of the chamber In a state where water is accumulated, it is possible to reliably prevent the occurrence of a rapid pressure increase in the chamber due to contact between the dropped melt and water. This makes it possible to safely operate (operate) the semiconductor single crystal rod manufacturing apparatus.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, this invention is not limited to these.

(Example)
A silicon single crystal rod having a diameter of 200 mm was manufactured using the semiconductor single crystal rod manufacturing apparatus 15 by the FZ method shown in FIG.

  That is, in the growth of the silicon single crystal rod, the raw material crystal rod 1 is melted by the induction heating coil 7 and fused to the seed crystal 9, and further, the drawing is performed to remove the dislocations generated in the crystal during the seeding. Then, the silicon single crystal was grown while expanding to a diameter of 200 mm, and the silicon single crystal rod was grown while being controlled to a constant diameter of 200 mm. At this time, as a semiconductor single crystal rod manufacturing apparatus 15 by the FZ method, a resistance type water leakage sensor 20 is laid at the bottom of the chamber 12, and a molybdenum melt receiving tray 21 is disposed below the melting zone 11. A thing was used.

  Then, when a silicon single crystal rod having a diameter of 200 mm was manufactured for a predetermined period, melt in the melting zone was dripped due to the shaking of the earthquake, etc., but they all fell on the tray 21 and solidified. It was. That is, the melt never reached the bottom of the chamber 12. Therefore, the chamber 12 was never damaged.

  In addition, when manufacturing a silicon single crystal rod having a diameter of 200 mm for a predetermined period, water may have accumulated in the chamber 12 due to water leakage from the induction heating coil 7, but when the water leakage sensor 20 functions, A water leak was immediately detected. When water leakage was confirmed, it was possible to quickly take appropriate measures such as stopping the operation of the semiconductor single crystal rod manufacturing apparatus 15 and removing the leaked water.

  Furthermore, since the contact between water and melt in the chamber 12 was reliably prevented, a situation in which the pressure in the chamber 12 suddenly increased never occurred. In this way, the risk of a sudden pressure increase due to contact between the water accumulated at the bottom of the chamber 12 and the melt dripped from the melting zone 11 could be reduced to almost zero.

(Comparative example)
When the silicon single crystal rod is manufactured, unlike the embodiment, the operation is performed by using the conventional semiconductor single crystal rod manufacturing apparatus 115 as shown in FIG. Went.

  In this case, when a large amount of melt in the melting zone was dropped due to the earthquake, the melt reached the bottom of the chamber 112 and the chamber 112 did not break, but the bottom was damaged. . Also, if water leakage occurs at this time, there is a possibility that water and the melt come into contact.

  According to the semiconductor single crystal rod manufacturing apparatus of the present invention, as shown in the embodiment, even when the melt in the melting zone is dripped in the chamber during the manufacture of the silicon crystal rod, the melt reaches the bottom of the chamber reliably. Could be prevented. On the other hand, in the conventional semiconductor single crystal rod manufacturing apparatus of the comparative example, serious damage may occur at the bottom of the chamber. Furthermore, according to the apparatus for manufacturing a semiconductor single crystal rod of the present invention, it was possible to reliably prevent contact between water and a high-temperature melt by detecting cooling water leakage at an early stage. As a result, the risk of sudden pressure increase in the chamber can be made almost zero, and it has become possible to manufacture a semiconductor single crystal rod safely.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has substantially the same configuration as the technical idea described in the claims of the present invention, and any device that exhibits the same function and effect is the present invention. It is included in the technical scope of the invention.

1 ... Raw material crystal rod, 2 ... Crystallization side single crystal rod (grown single crystal rod), 3 ... Upper shaft,
4 ... Upper holder, 5 ... Lower shaft, 6 ... Lower holder, 7 ... Induction heating coil,
8 ... Electrode, 9 ... Seed crystal, 10 ... Throttle part, 11 ... Melting zone (floating zone),
12 ... Chamber, 13 ... High frequency oscillator,
15 ... Manufacturing apparatus for semiconductor single crystal rod of the present invention, 20 ... Water leakage sensor,
21 ... Saucer, 101 ... Raw material crystal rod, 102 ... Crystallization side single crystal rod (growing single crystal rod),
103 ... Upper shaft, 104 ... Upper holder, 105 ... Lower shaft, 106 ... Lower holder,
107 ... induction heating coil, 111 ... melting zone (floating zone), 112 ... chamber,
113: a high-frequency oscillator, 115: a conventional semiconductor single crystal rod manufacturing apparatus.

Claims (3)

At least a chamber for accommodating the raw material crystal rod and the crystallization side single crystal rod, an induction heating coil for heating and melting a part of the raw material crystal rod to form a melting zone, and supplying electric power to the induction heating coil An apparatus for manufacturing a semiconductor single crystal rod by an FZ method having a high-frequency oscillator,
An apparatus for producing a semiconductor single crystal rod, comprising a receiving tray for receiving a melt dropped from the melting zone in the chamber.   The apparatus for manufacturing a semiconductor single crystal rod according to claim 1, further comprising a water leakage sensor for detecting water leakage in the chamber.   3. The semiconductor single crystal rod manufacturing apparatus according to claim 1, wherein the tray is made of a material having a melting point higher than that of the raw material crystal rod.

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