JP2017103468A - Semiconductor device manufacturing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method capable of manufacturing a semiconductor device which reduces warpage while reducing a complex process and achieves excellent heat resistance and excellent moisture resistance without performing conventional measures to warpage by a filler and adjustment of a resin filling amount corresponding to the number of defective elements at the time of forming an encapsulation layer.SOLUTION: A semiconductor device manufacturing method comprises: a resin mounting process of mounting on a semiconductor element non-mounting substrate, a thermosetting resin of an amount larger than an amount required for forming an encapsulation layer; an arrangement process of heating the inside of a first cavity at a temperature within a range from room temperature to 200°C and arranging a semiconductor element mounting substrate in one mold between an upper mold and a lower mold of a molding die and arranging the semiconductor element non-mounting substrate in the other mold; a resin discharge process of applying pressure to the upper die and the lower die to discharge excess thermosetting resin to the outside of the first cavity; and an integration process of molding the thermosetting resin while applying pressure to the upper die and the lower die to integrate the semiconductor element mounting substrate, the semiconductor element non-mounting substrate and the encapsulation layer.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a method for manufacturing a semiconductor device using a molding die, and a semiconductor device manufactured thereby.

Various wafer-level sealing methods and methods for single-sided molding of an organic substrate on which semiconductor elements are mounted in a matrix with a thermosetting epoxy resin have been proposed and studied (Patent Documents 1-3).
When manufacturing a semiconductor device by the above method, when the size of the substrate is small, the warpage of the substrate after sealing can be controlled by adjusting the linear expansion coefficient of the epoxy resin.

  When using a substrate such as a small-diameter wafer with a diameter of about 8 inches (200 mm) or a small-sized organic substrate, sealing molding can be performed without any major problems at present, but sealing with a wafer larger than 8 inches or a large organic substrate is possible. Later, since the shrinkage stress of epoxy resin or the like is large, a wafer or an organic substrate molded on one side is greatly warped or cracked, making it impossible to manufacture a semiconductor device.

  In order to solve the above-mentioned problems associated with the increase in size of wafers and metal substrates, it is necessary to fill the filler to a level of 95 wt%, or to reduce the shrinkage stress during curing by reducing the elasticity of the resin.

JP 2001-044324 A JP 2003-213087 A JP 2009-032842 A

However, a thermosetting resin having a performance that can be sufficiently molded by filling a filler to a level of 95 wt% cannot be produced at present. In addition, when the elasticity is lowered to a level at which no warpage occurs, there is a problem that heat resistance and moisture resistance are lowered.
When a sealing layer is formed by sealing a substrate on which a plurality of semiconductor elements are mounted with resin, if there is a defective semiconductor element, sealing is performed after removing the defective element. In this case, the amount of resin necessary for forming the sealing layer increases the volume of the defective element removed. Therefore, it is necessary to control the volume of the resin necessary for forming the sealing layer.

However, it is very troublesome to adjust the filling amount by calculating the amount of resin required each time during sealing in this way, and there is a problem that the process time is increased, and there is a void in the sealing layer due to insufficient filling amount. This causes a problem that a defect such as the formation of the
The present invention has been made in view of the above-mentioned problems, and reduces complicated processes without performing countermeasures against warping by conventional fillers and adjusting the resin filling amount according to the number of defective elements when forming a sealing layer. However, an object of the present invention is to provide a semiconductor device manufacturing method capable of manufacturing a semiconductor device with reduced warpage and excellent heat resistance and moisture resistance.

  In order to achieve the above object, according to the present invention, there is provided a method of manufacturing a semiconductor device using a molding die having an upper die and a lower die, and includes a semiconductor element mounting substrate and a semiconductor element non-mounting substrate. And a preparatory step for preparing the molding die having a first cavity for integrating a sealing layer made of a thermosetting resin formed between the substrates, on the non-semiconductor element mounting substrate A resin placing step of placing a larger amount of the thermosetting resin than is necessary for forming the sealing layer, heating the inside of the first cavity to room temperature to 200 ° C., Arrangement step of disposing the semiconductor element mounting substrate in one of the upper mold and the lower mold and disposing the non-semiconductor element mounting substrate in the other mold, the upper mold and the lower mold The mold is pressed to remove excess thermosetting resin from the first casing. A resin discharging step of discharging to the outside of the tee, forming the thermosetting resin while pressing the upper mold and the lower mold, and mounting the semiconductor element mounting substrate, the semiconductor element non-mounting substrate, and the sealing layer And a step of separating the integrated substrate from the molding die and dicing it into individual pieces. A method for manufacturing a semiconductor device is provided.

  With such a method of manufacturing a semiconductor device, it is not necessary to adjust the amount of resin to be filled each time a defective semiconductor element is removed, and the substrate and the sealing layer can be reliably formed without generating voids. Can be integrated. Further, by forming a thermosetting resin on a non-semiconductor mounting substrate in advance, the complexity of the process can be reduced, and contamination of the production line due to the use of powder can be prevented. Furthermore, even if a large substrate is sealed, warping and cracking of the substrate after sealing can be suppressed, and batch sealing at the wafer level becomes possible.

In the preparing step, the molding die further having a second cavity connected to the first cavity through a runner is prepared, and in the resin discharging step, the excess thermosetting resin is removed from the second cavity. It is preferable to discharge into the cavity.
In this way, excess thermosetting resin can be easily discharged to the outside of the first cavity while filling the inside of the first cavity.

In the resin placing step, the thermosetting resin is preferably placed so as to be 0.1 to 70 vol% higher than the amount necessary for forming the sealing layer.
Thus, if it is mounted so as to be 0.1 vol% more than the required amount, the inside of the first cavity can be surely filled, and if it is mounted so as to increase 70 vol%, surplus An increase in thermosetting resin can be suppressed and an increase in cost can be suppressed.

In the integration step, the thermosetting resin is preferably molded by pressurizing the first cavity or the second cavity.
In this way, voids in the sealing layer can be reduced, and the performance of the semiconductor device to be manufactured can be improved.

At this time, pressurization in the first cavity can be performed by press-fitting air or an inert gas into the second cavity. At this time, pressurization of air or inert gas into the second cavity can be performed by an external pump or a cylinder.
In this way, the inside of the first cavity can be easily pressurized.

In the placing step, the temperature in the second cavity is heated to a temperature higher than the temperature in the first cavity, and in the resin discharging step, the excessive thermosetting property discharged to the second cavity. The resin may be cured prior to the thermosetting resin in the first cavity. At this time, the temperature in the second cavity can be heated to a temperature in the range of 100 to 250 ° C.
In this way, regardless of the volume of the first and second cavities and the amount of the thermosetting resin to be placed, it is possible to reliably seal the inside of the first cavity and integrate the substrate and the sealing layer. .

In the integration step, the atmosphere in the first cavity can be decompressed to mold the thermosetting resin. At this time, the atmosphere in the first cavity can be decompressed to a degree of vacuum of 0.01333 to 13.33 KPa.
In this way, voids in the sealing layer can be more effectively reduced.

  In the method for manufacturing a semiconductor device of the present invention, the thermosetting resin can be molded by compression molding.

In addition, as the thermosetting resin, any of an epoxy resin, a silicone resin, and a silicone / epoxy hybrid resin can be used.
By using such a resin, a semiconductor device having excellent heat resistance and moisture resistance can be manufactured.

Furthermore, a semiconductor device manufactured by the method for manufacturing a semiconductor device is provided.
Such a semiconductor device is excellent in heat resistance and moisture resistance, and has less residual strain as a result of suppressing warpage.

  In the method for manufacturing a semiconductor device of the present invention, after placing a thermosetting resin in an amount larger than the amount necessary for forming the sealing layer on the non-semiconductor element mounting substrate, the semiconductor element mounting substrate and the semiconductor are placed on the mold. Even when a defective semiconductor element is removed, an element non-mounting substrate is arranged, and the upper mold and the lower mold are pressed to discharge excess thermosetting resin to the outside of the first cavity. It is not necessary to adjust the resin filling amount according to the number of defective elements when forming the sealing layer, and the substrate and the sealing layer can be reliably integrated without generating voids, which complicates the process and contaminates the production line. Etc. can be reduced. Furthermore, since the semiconductor element mounting substrate, the non-semiconductor element mounting substrate, and the sealing layer made of a thermosetting resin formed between these substrates are integrated, even after sealing a large substrate, The substrate can be prevented from warping and cracking, and can be sealed at the wafer level.

It is a flowchart of the manufacturing method of the semiconductor device of this invention. It is the schematic which shows the semiconductor device of this invention. It is a figure which shows another example of the metal mold | die which can be used with the manufacturing method of the semiconductor device of this invention.

Hereinafter, although an embodiment is described about the present invention, the present invention is not limited to this.
As described above, even when a defective semiconductor element is removed at the time of resin sealing, the necessary amount of resin is calculated each time and the filling amount is not adjusted. A manufacturing method of a semiconductor device capable of integrating a stop layer is desired.

  As a result of intensive studies to achieve the above-mentioned problems, the present inventors have found the following and completed the present invention. That is, after placing a thermosetting resin in an amount larger than the amount necessary for forming the sealing layer on the non-semiconductor element mounting substrate, the semiconductor element mounting substrate and the non-semiconductor element mounting substrate are placed in the mold, If the upper mold and the lower mold are pressed to discharge the excess thermosetting resin to the outside of the first cavity, the complicated steps can be reduced without adjusting the resin filling amount. However, the substrate and the sealing layer can be reliably integrated.

First, the semiconductor device of the present invention manufactured by the method of manufacturing a semiconductor device of the present invention will be described.
As shown in FIG. 2, the semiconductor device 20 of the present invention mainly includes a semiconductor element 7, a semiconductor element mounting substrate 5, a semiconductor element non-mounting substrate 6, and a sealing layer 11 made of a thermosetting resin. The semiconductor element 7 is mounted on the semiconductor element mounting substrate 5. The sealing layer 11 for sealing the semiconductor element 7 is formed between the semiconductor element mounting substrate 5 and the semiconductor element non-mounting substrate 6. The thickness of the semiconductor device 20 depends on the thickness of the built-in semiconductor element 7, but 1 mm or less is desirable because it can be miniaturized when the semiconductor device is mounted on a home appliance or the like.

  This semiconductor device of the present invention is manufactured by the method for manufacturing a semiconductor device of the present invention described in detail below. FIG. 1 shows a flowchart of a method for manufacturing a semiconductor device of the present invention.

[(A) Preparation step]
In the preparation step, a metal mold having a first cavity 4 for integrating a semiconductor element mounting substrate, a semiconductor element non-mounting substrate, and a sealing layer made of a thermosetting resin formed between the substrates. Prepare mold 3. The molding die 3 is composed of an upper die 1 and a lower die 2.
This molding die may have a mechanism for moving in a cavity portion used for compression molding.
The size and shape of the first cavity 4 are not particularly limited, and can be appropriately configured according to the semiconductor device to be manufactured. The first cavity 4 may be formed in either the upper mold 1 or the lower mold 2, or may be formed in both.
The molding die 3 prepared here may further include a second cavity 9 connected to the first cavity 4 via a runner 10.

[(B) Resin placement step]
In the resin placement step, a larger amount of thermosetting resin 8 than the amount necessary for forming the sealing layer 11 is placed on the semiconductor element non-mounting substrate 6.
If the thermosetting resin 8 is placed in this manner, even if a partially defective semiconductor element is removed from the semiconductor element mounting substrate 5, depending on the number of removed semiconductor elements as in the prior art. It is not necessary to adjust the filling amount by calculating the amount of the required thermosetting resin. Moreover, the complicated process of filling the first cavity 4 with a thermosetting resin from the outside can be eliminated.

Here, the amount of resin necessary for forming the sealing layer can be set to a necessary amount when no semiconductor element is mounted on the semiconductor element mounting substrate 5, for example. In this way, it is possible to reliably form the sealing layer without forming an unfilled void portion regardless of the number of defective semiconductor elements.
It is preferable that the thermosetting resin 8 is placed so as to be 0.1 to 70 vol% higher than the amount necessary for forming the sealing layer.
Thus, if it is mounted so as to be 0.1 vol% more than the necessary amount, the inside of the first cavity can be surely filled, and if it is filled so as to be 70 vol% or less, surplus An increase in thermosetting resin can be suppressed and an increase in cost can be suppressed.

[(C) Arrangement process]
In the arranging step, the inside of the first cavity is heated to room temperature to 200 ° C., the semiconductor element mounting substrate 5 is arranged in one of the upper mold 1 and the lower mold 2 of the molding die 3, and the other The semiconductor element non-mounting substrate 6 on which the thermosetting resin 8 is placed in the resin placing step is placed on the mold. Although the arrangement method is not particularly limited, it can be performed by adsorbing the substrate to the surfaces of the upper mold 1 and the lower mold 2 that are heated by a suction method or the like.
Here, there is no particular limitation on which mold the semiconductor element mounting substrate 5 and the semiconductor element non-mounting substrate 6 are placed on. FIG. 1C shows an example in which the semiconductor element mounting substrate 5 is arranged in the upper mold 1.

  As the semiconductor element mounting substrate 5 and / or the semiconductor element non-mounting substrate 6, for example, a rectangular substrate or a disk-shaped wafer can be used, and an inorganic substrate, a metal substrate, or an organic resin substrate can be used. . The semiconductor element mounting substrate 5 is a substrate on which a semiconductor element 7 is placed or formed, and the semiconductor element non-mounting substrate 6 is a substrate on which no semiconductor element is placed or formed. In particular, when an organic resin substrate is used, a fiber-containing organic resin substrate can be used from the viewpoint of controlling an expansion coefficient described later.

  Typical examples of the inorganic substrate include a ceramic substrate and a silicon wafer, and examples of the metal substrate include a copper or aluminum substrate whose surface is insulated. Examples of the organic resin substrate include a BT (bismaleimide triazine) resin substrate, a glass epoxy substrate, and an FRP (fiber reinforced plastic) substrate.

  Fibers applicable to the fiber-containing organic resin substrate include inorganic fibers such as carbon fibers, glass fibers, quartz glass fibers, and metal fibers, organic fibers such as aromatic polyamide fibers, polyimide fibers, and polyamideimide fibers, and silicon carbide. Examples thereof include fibers, titanium carbide fibers, boron fibers, and alumina fibers. Examples of the fiber-containing organic resin substrate include epoxy resin, BT resin, and silicone resin substrate reinforced with these fibers. Any type of substrate other than this type of substrate can be used as long as the insulation can be maintained according to the product characteristics. The most preferable fiber-containing organic resin substrate is preferably reinforced with glass fiber, quartz fiber, carbon fiber or the like. Among them, those using highly insulating glass fibers or quartz glass fibers are preferable.

  As the form of the reinforcing fiber as described above, a sheet such as roving, cloth, nonwoven fabric, etc., in which long fiber filaments are aligned in a certain direction, and a chopped strand mat, etc. that can form a laminate If so, there is no particular limitation.

  In any of the metal substrates, inorganic substrates, and organic resin substrates, the thickness is preferably 20 μm to 1 mm, more preferably 30 μm to 500 μm, and still more preferably 30 μm to 200 μm. If it is 20 μm or more, deformation due to being too thin can be prevented, and particularly when an inorganic substrate is used, cracking during handling can be suppressed. Moreover, if it is 1 mm or less, it can prevent that a semiconductor device becomes thick.

  The semiconductor element mounting substrate and the non-semiconductor element mounting substrate preferably have similar physical characteristics. In particular, the linear expansion coefficients of both the substrates are substantially equal to or less than 25 ppm / ° C., particularly 15 ppm / It is more preferable to use those having a temperature of ℃ or less. In particular, if the physical characteristics between the two substrates are similar, the warpage of the semiconductor device after being molded and sealed with the thermosetting resin 8 is further suppressed.

  When an organic resin substrate is used as the semiconductor element mounting substrate and the semiconductor element non-mounting substrate, at least one of the organic resin substrates, preferably both organic resin substrates, have a linear expansion coefficient of 3 to 25 ppm at room temperature to 200 ° C. The organic resin substrate at / ° C. is desirable from the viewpoint of reducing warpage of the semiconductor device to be manufactured. In the present application, room temperature means 25 ° C. ± 10 ° C. (the same applies hereinafter).

  Furthermore, when an inorganic substrate such as a silicon wafer or an organic resin substrate is used as the semiconductor element mounting substrate, the expansion coefficient of the inorganic substrate or organic resin substrate on which the semiconductor element is mounted is 3 to XY in the room temperature to 200 ° C. It is desirable to be 15 ppm / ° C.

  Moreover, also when using an organic resin board | substrate as a semiconductor element non-mounting board | substrate, it is desirable for the expansion coefficient of the organic resin board | substrate to be 5-25 ppm / degrees C in a XY direction from room temperature to 200 degreeC. When the organic resin substrate is in such a range, the difference in expansion coefficient from the semiconductor element mounting substrate is small, and the warpage of the manufactured semiconductor device can be further suppressed. In addition, the expansion coefficient of the organic resin substrate is more desirably 5 to 20 ppm / ° C, and further desirably 5 to 15 ppm / ° C.

  The substrate is preferably 20 to 500 mm long and 100 to 500 mm wide from the viewpoint of productivity and ease of handling. A circular substrate having a diameter of about 50 to 400 mm is desirable from the viewpoint of productivity and ease of handling. If it is such a board | substrate, it will be easy to arrange | position a semiconductor element on a board | substrate, or to connect a gold wire etc. with a wire bonder.

[(D) Resin discharging process]
In the resin discharging step, the upper mold 1 and the lower mold 2 are pressurized to discharge the excess thermosetting resin 8 to the outside of the first cavity 4.
As shown in FIG. 1, for example, in the preparation step (A), the molding die 3 further having the second cavity 9 described above is prepared, and in the resin discharge step (D), the surplus thermosetting resin 8 is removed. It can be discharged into the second cavity 9.

  The size and shape of the second cavity 9 and the runner 10 are not particularly limited, and can be appropriately configured according to the size and shape of the molding die to be used, the amount of thermosetting resin to be filled, and the like. The second cavity 9 may be formed in either the upper mold 1 or the lower mold 2 or may be formed in both.

For example, the total capacity of the first cavity 4 and the second cavity 9 can be configured to be larger than the volume of the thermosetting resin 8 placed in the resin placing step (B). In this way, it is possible to avoid the excess thermosetting resin 8 from overflowing from the molding die and further forming burrs.
In this case, in order to ensure that the inside of the first cavity 4 is hermetically sealed when the thermosetting resin is molded in the integration step, which is a subsequent step, for example, in the above-described arrangement step (C), the second step The temperature in the cavity 9 is heated to a temperature higher than the temperature in the first cavity 4, and the excess thermosetting resin discharged into the second cavity 9 in the resin discharging step (D) is removed from the first cavity 4. It can be hardened before the thermosetting resin inside. Here, the temperature in the 2nd cavity 9 can be made into the temperature in the range of 100-250 degreeC.
Or you may shape | mold a thermosetting resin, pressurizing the inside of the 1st cavity 4 or the inside of the 2nd cavity 9 so that it may mention later.

[(E) Integration process]
In the integration step, the thermosetting resin 8 is molded while pressing the upper mold 1 and the lower mold 2, and the semiconductor element mounting substrate 5, the semiconductor element non-mounting substrate 6, and the sealing layer 11 are integrated. . In this way, by using two substrates on the front and back surfaces of the semiconductor element and molding and sealing between the substrates with a thermosetting resin, there is almost no warping and excellent heat resistance and moisture resistance. A semiconductor device can be manufactured. The interval between the integrated semiconductor element mounting substrate and the non-semiconductor element mounting substrate, that is, the height of the sealing layer 11 is preferably 20 to 1000 μm.

  In the integration step, compression molding that is usually used can be used. Specifically, in the integration step, the thermosetting resin 8 placed on the semiconductor element non-mounting substrate 6 can be compression-molded by pressurizing the upper mold and the lower mold at room temperature or under heating. . In this case, in the resin discharging step (D), the heated upper and lower molds are clamped under pressure, and the excess thermosetting resin 8 is discharged to the outside of the first cavity 4, and the thermosetting resin is left as it is. 8 is heat cured.

In the integration step, the thermosetting resin can be molded by pressurizing the first cavity 4 or the second cavity 9. In this way, the filling property into the gap can be improved, and the generation of voids in the sealing layer 11 can be reduced.
As a specific method, the inside of the first cavity can be pressurized by press-fitting air or an inert gas into the second cavity using, for example, an external pump or a cylinder.

  Alternatively, the thermosetting resin 8 can be molded by reducing the atmosphere in the first cavity in order to improve the filling property into the gap. It is better to reduce the pressure to a level as close to vacuum as possible. For example, the degree of vacuum can be set to 0.01333 to 13.33 KPa (0.1 to 100 Torr).

  The thermosetting resin 8 used in the integration step may be in the form of a composition containing other components. As the thermosetting resin, normally, a solid epoxy resin, a silicone resin, or a silicone / epoxy hybrid resin composed of an epoxy resin and a silicone resin that is liquefied under heating at 100 ° C. or lower is preferably used. If a solid thermosetting resin that liquefies under heating is used, it is possible to avoid contamination of the line that occurs when a powder thermosetting resin is used.

  Examples of this epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, 3,3 ′, 5,5′-tetramethyl-4,4′-biphenol type epoxy resin, or 4,4′-biphenol type epoxy resin. Biphenol type epoxy resin, phenol novolac type epoxy resin, cresol novolac type epoxy resin, bisphenol A novolak type epoxy resin, naphthalenediol type epoxy resin, trisphenylol methane type epoxy resin, tetrakisphenylol ethane type epoxy resin, In addition, a known epoxy resin that is liquid or solid at room temperature, such as an epoxy resin obtained by hydrogenating an aromatic ring of a phenol dicyclopentadiene novolac type epoxy resin or an alicyclic epoxy resin, can be used. If necessary, an epoxy resin other than the above can be used in a certain amount or less.

  Since the semiconductor element is sealed, it is preferable that halogen ions such as chlorine and alkali ions such as sodium are reduced as much as possible in the thermosetting resin. Usually, it is desirable that 10 g of a sample is added to 50 ml of ion-exchanged water, sealed, left in an oven at 120 ° C. for 20 hours, and then extracted by heating at 120 ° C. so that all ions are 10 ppm or less.

  As the epoxy resin curing agent, phenol novolac resins, various amine derivatives, acid anhydrides and acid anhydride groups partially ring-opened to generate carboxylic acids, and the like can be used. Among these, phenol novolac resin is desirable in order to ensure the reliability of the semiconductor device.

In order to accelerate the reaction between the epoxy resin and the curing agent, imidazole derivatives, phosphine derivatives, amine derivatives, metal compounds such as organoaluminum compounds, and the like may be used.
For example, the mixing ratio of the epoxy resin and the phenol novolac resin is preferably mixed so that the ratio of the epoxy group and the phenolic hydroxyl group is 1: 0.8 to 1.3.

  In addition, various additives can be further blended in the epoxy resin composition as necessary. For example, various thermoplastic resins, thermoplastic elastomers, organic synthetic rubbers, silicone-based low stress agents, waxes, halogen trapping agents and other additives can be added and blended for the purpose of improving the properties of the resin.

  As the silicone resin, a condensable or thermosetting silicone resin can be used. Among these, addition-curable silicone resin compositions are desirable. The addition-curable silicone resin composition includes (A) an organopolysiloxane having a non-conjugated double bond group (for example, an alkenyl group such as a vinyl group), (B) an organohydrogenpolysiloxane, and (C) platinum. An addition-curable silicone resin composition containing a system catalyst as an essential component is preferably used.

  Furthermore, examples of the silicone-epoxy hybrid resin include a copolymer composed of the epoxy resin and the silicone resin.

  An inorganic filler can be blended in the composition of the epoxy resin, silicone resin, and silicone / epoxy hybrid resin that can be used as the thermosetting resin. Examples of the inorganic filler to be blended include silicas such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, aluminosilicate, boron nitride, glass fiber, and antimony trioxide. The average particle size and shape of these inorganic fillers are not particularly limited, but the maximum particle size is 75 μm or less, preferably 50 μm or less, in order to ensure the filling property to the narrow part where the gap between large substrates is 1 mm or less. Is desirable. In particular, when the distance between the substrates is 500 μm or less, particles having a maximum shape of 30 μm or less and a spherical shape are suitable. If a filler of 75 μm or less is used, a local decrease in fluidity is suppressed, sufficient filling properties are ensured, and voids and unfilling can be suppressed.

  In particular, the inorganic filler to be added to the epoxy resin composition is one that has been surface-treated with a coupling agent such as a silane coupling agent or a titanate coupling agent in order to increase the bond strength between the epoxy resin and the inorganic filler. You may mix | blend.

  Examples of such a coupling agent include epoxy functions such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane. Functional alkoxysilanes such as N-β (aminoethyl) -γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, and γ-mercapto It is preferable to use a mercapto functional alkoxysilane such as propyltrimethoxysilane. The amount of coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

  In the case of a silicone resin composition or a silicone / epoxy hybrid resin composition, the surface of the inorganic filler may be treated with the above coupling material.

  The filling amount of the inorganic filler is preferably 20 to 1300 parts by weight, particularly 50 to 1000 parts by weight with respect to 100 parts by weight of the total amount of the resin in the epoxy resin composition, the silicone resin, and the silicone / epoxy hybrid resin composition. If it is 20 parts by mass or more, sufficient strength can be obtained, and if it is 1300 parts by mass or less, the decrease in fluidity due to thickening is unlikely to occur, and poor filling properties can be prevented. The semiconductor element can be completely sealed. In addition, it is preferable to contain this inorganic filler in 15-95 mass% of the whole composition, especially 30-90 mass%.

[(F) Dicing process]
The large substrate on which the semiconductor element is mounted can be sealed without generating voids or warping by the above process. The substrate integrated by the above method is taken out from the molding die, and is usually post-cured at a temperature of 150 to 180 ° C. for 1 to 4 hours to stabilize the electrical characteristics and mechanical characteristics.
Further, the semiconductor device 20 can be manufactured by dicing the post-cured substrate into pieces by dicing using a dicing blade 12 by a normal method.

  The semiconductor device 20 manufactured by the method for manufacturing a semiconductor device has a high quality with less warping and little residual strain, and has excellent heat resistance and moisture resistance.

  EXAMPLES Hereinafter, the present invention will be described more specifically with reference to examples and comparative examples of the present invention, but the present invention is not limited to these.

Example 1
The following organic resin substrate with a semiconductor element mounted thereon, an organic resin substrate without a semiconductor element on which a thermosetting epoxy resin was mounted, and a first cavity and a second cavity as shown in FIG. A molding die was prepared.
Organic resin substrate on which semiconductor elements are mounted: BT resin substrate having a thickness of 100 μm, a length of 220 mm, and a width of 240 mm (linear expansion coefficient: 15 ppm / ° C.). Up to 144 silicon chips with a thickness of 300μm and 9mm square can be mounted. 30 defective chips are removed from 144 silicon chips bonded with an epoxy die bond material and connected to a substrate with a gold wire.
Organic resin substrate without semiconductor element: BT resin substrate with a thickness of 100 μm, length of 214 mm, and width of 234 mm (linear expansion coefficient: 15 ppm / ° C.)
Thermosetting epoxy resin: KMC-2520 manufactured by Shin-Etsu Chemical Co., Ltd., specific gravity (25 ° C) 1.93, 64 g (33.2 cm ³ )

The molding die temperature of the compression molding apparatus was set to 150 ° C., and the organic resin substrate mounted with the semiconductor element was sucked and adsorbed to the upper die. On the other hand, the organic resin substrate not mounted with the semiconductor element on which the thermosetting epoxy resin was mounted was sucked and adsorbed to the lower mold in the same manner.
Thereafter, the periphery of the mold was sealed, the inside was degassed to a degree of vacuum of 5 kPa, and then the upper and lower molds were closed. The gap between the substrates was 600 μm. Subsequently, a pressure of 20 kg / cm ² was applied, and excess resin and voids were discharged to the second cavity through the runner. At this time, air was introduced into the second cavity so that the pressure on the resin did not decrease. The molding time was 3 minutes.

  After molding, the integrated substrate was taken out of the molding die and cooled to room temperature, and then the sealing layer was examined. As a result, problems such as insufficient resin and void formation did not occur. Further, when the warpage of the substrate was measured, the amount of warpage was 0.1 mm in the longitudinal direction and 0.1 mm in the lateral direction. Further, the film was post-cured at 180 ° C. for 4 hours, and the warpage was measured in the same manner. As a result, the warp was almost 0.2 mm in the longitudinal direction and 0.1 mm in the lateral direction.

This substrate was affixed to a dicing tape, and dicing was performed to attach a solder ball to the back surface of the 50 separated semiconductor devices to manufacture a semiconductor device. When each semiconductor device was confirmed electrically, it was functioning without any problems.
The production of the semiconductor device was repeated 100 times, and the sealing layer was evaluated. As a result, the defect occurrence rate was 0%.
As described above, the method for manufacturing a semiconductor device according to the present invention ensures that even when a defective semiconductor element is removed, the substrate and the substrate can be reliably manufactured without adjusting the resin filling amount according to the number of defective elements when forming the sealing layer. The sealing layer can be integrated and warping and cracking of the substrate after sealing can be suppressed even if a large substrate is sealed. By forming the thermosetting resin on the semiconductor non-mounting substrate in advance, the complexity of the process can be reduced, and contamination of the production line due to the use of powder can be prevented.

(Example 2)
A molding die in which the first cavity and the second cavity as shown in FIG. 3 were formed by separate blocks was prepared. This mold can control the temperature in the first cavity and the second cavity separately. The temperature in the first cavity of the upper mold and the lower mold was set to 150 ° C., and the temperature in the second cavity of the lower mold was set to 180 ° C.
Molding was performed by the same molding process as in Example 1 except that air was not sent to the second cavity when the resin was pressurized. As a result, defects such as lack of resin and formation of voids did not occur. Further, when the warpage of the substrate was measured, the amount of warpage was 0.1 mm in the longitudinal direction and 0.1 mm in the lateral direction. Further, the film was post-cured at 180 ° C. for 4 hours, and the warpage was measured in the same manner. As a result, the warp was almost 0.2 mm in the longitudinal direction and 0.1 mm in the lateral direction.
This substrate was affixed to a dicing tape, and dicing was performed to attach a solder ball to the back surface of the 50 separated semiconductor devices to manufacture a semiconductor device. When each semiconductor device was confirmed electrically, it was functioning without any problems.
The production of the semiconductor device was repeated 100 times, and the sealing layer was evaluated. As a result, the defect occurrence rate was 0%.

(Comparative Example 1)
The same organic resin substrate with a semiconductor element as that of Example 1, an organic resin substrate without a semiconductor element, a thermosetting resin, and a molding die were prepared. The semiconductor element non-mounting substrate and the semiconductor element mounting substrate were placed in the mold without placing the thermosetting resin on the semiconductor element non-mounting substrate. Specifically, the molding die temperature of the compression molding apparatus is set to 150 ° C., and the organic resin substrate loaded with the semiconductor element is sucked into the upper mold by suction, and the organic resin substrate not loaded with the semiconductor element is the lower mold. The mold was similarly sucked and adsorbed. Thereafter, a powder thermosetting epoxy resin (KMC-2520 specific gravity 1.93 manufactured by Shin-Etsu Chemical Co., Ltd.) in an amount larger than that required for forming the sealing layer is laminated on the lower substrate, specifically 64 g. A semiconductor device was manufactured under the same conditions as in Example 1 and evaluated in the same manner.

  As a result of investigating the sealing layer of the semiconductor device after manufacture, there were no problems such as lack of resin or formation of voids. When the semiconductor device was manufactured 100 times in the same manner as in Example 1 and the sealing layer was evaluated, the defect occurrence rate was 0%. However, laminating the thermosetting resin after placing the semiconductor element non-mounting substrate in the mold as described above is a very complicated operation, and furthermore, the use of powder thermosetting resin contaminates the production line. Occurred and was inefficiently productive.

(Comparative Example 2)
The upper and lower molds for compression molding that do not have the second cavity and clamp only the first cavity were prepared. As in Example 1, an organic resin substrate mounted with a semiconductor element from which 30 defective chips were removed was used, and a powder thermosetting epoxy resin (KMC-2520 specific gravity 1.93 manufactured by Shin-Etsu Chemical Co., Ltd.) was placed on the lower substrate. 64 g was laminated. The weighing process of this resin was very complicated and hindered production.
A semiconductor device was manufactured under the same conditions as in Example 1 and evaluated in the same manner.
When the sealing layer of the semiconductor device after manufacture was investigated, generation | occurrence | production of the void was confirmed. When the manufacturing of the semiconductor device was repeated 100 times in the same manner as in Example 1 and the sealing layer was evaluated, the generation rate was 30%.
Further, since powder is used as the thermosetting resin, the process becomes more complicated than in the examples, and further, the production line is contaminated, resulting in inefficiency in production.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

DESCRIPTION OF SYMBOLS 1 ... Upper die, 2 ... Lower die, 3 ... Molding die, 4 ... 1st cavity,
5 ... Semiconductor device mounting substrate, 6 ... Semiconductor device non-mounting substrate, 7 ... Semiconductor device,
8 ... thermosetting resin, 9 ... second cavity, 10 ... runner,
DESCRIPTION OF SYMBOLS 11 ... Sealing layer, 12 ... Dicing blade, 20 ... Semiconductor device.

Claims (7)

A method of manufacturing a semiconductor device using a molding die having an upper die and a lower die,
Preparing the molding die having a first cavity for integrating a semiconductor element mounting substrate, a semiconductor element non-mounting substrate, and a sealing layer made of a thermosetting resin formed between the substrates. Preparation process,
A resin placing step of placing the thermosetting resin in an amount larger than the amount necessary for forming the sealing layer on the semiconductor element non-mounting substrate;
The inside of the first cavity is heated to room temperature to 200 ° C., the semiconductor element mounting substrate is disposed on one of the upper mold and the lower mold of the molding mold, and the other mold is disposed on the other mold. An arrangement step of arranging the semiconductor element non-mounting substrate;
A resin discharging step of pressurizing the upper mold and the lower mold to discharge excess thermosetting resin to the outside of the first cavity;
Forming the thermosetting resin while applying pressure to the upper mold and the lower mold, and integrating the semiconductor element mounting substrate, the semiconductor element non-mounting substrate, and the sealing layer; and A step of taking the integrated substrate out of the mold and dicing it into individual pieces;
In the integration step, the atmosphere in the first cavity is decompressed to mold the thermosetting resin,
A method of manufacturing a semiconductor device, wherein the reduced pressure of the atmosphere in the first cavity is set to a degree of vacuum of 0.01333 to 13.33 KPa.   In the preparing step, the molding die further having a second cavity connected to the first cavity through a runner is prepared, and in the resin discharging step, the excess thermosetting resin is removed from the second cavity. 2. The method of manufacturing a semiconductor device according to claim 1, wherein the semiconductor device is discharged into a cavity.   The said resin mounting process WHEREIN: It mounts so that the said thermosetting resin may be 0.1-70 vol% more than the quantity required for formation of the said sealing layer. The manufacturing method of the semiconductor device as described in 2. above.   In the placing step, the temperature in the second cavity is heated to a temperature higher than the temperature in the first cavity, and in the resin discharging step, the excessive thermosetting property discharged to the second cavity. The method of manufacturing a semiconductor device according to claim 2, wherein the resin is cured before the thermosetting resin in the first cavity.   The method for manufacturing a semiconductor device according to claim 4, wherein the temperature in the second cavity is heated to a temperature in the range of 100 to 250 ° C. 6.   6. The method for manufacturing a semiconductor device according to claim 1, wherein the thermosetting resin is molded by compression molding.   7. The method of manufacturing a semiconductor device according to claim 1, wherein any one of an epoxy resin, a silicone resin, and a silicone / epoxy hybrid resin is used as the thermosetting resin.

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