JP2017102280A - Device forming apparatus, pattern forming apparatus, device forming method, and pattern forming method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To expose an image (pattern) on a sheet substrate in a fine layout state.SOLUTION: An exposure apparatus EX includes: an encoder which reads out a scale formed in a scale part rotating with a rotary drum that transports a substrate; an encoder counter ECN2 which counts a shift amount of the read out scale and resets a count value CD2 for every rotary action of the rotary drum; a drawing counter SCN2 which counts the shift amount of the scale in a second count range that is larger than a first count range counted by the encoder counter ECN2 by corresponding to one rotary action of the rotary drum; and an exposure control part 34 which controls a processing unit that performs processing for forming an electronic device based on a count value CW2 of the drawing counter SCN2 after presetting a prescribed value to the drawing counter SCN2 before starting the processing for an exposure area on the substrate.SELECTED DRAWING: Figure 8

Description

  The present invention relates to a device forming apparatus, a pattern forming apparatus, a device forming method, and a pattern forming method for performing a predetermined process for forming an electronic device on a flexible sheet substrate.

  As disclosed in Patent Document 1 below, an exposure apparatus is known in which a sheet-like photosensitive material (paper) is fixed to the surface of a rotating drum, and an image is written on the photosensitive material with a laser beam while rotating the drum. ing. In the exposure apparatus of Patent Document 1, an encoder for detecting the rotational position of the drum is mounted coaxially with the shaft portion of the drum, and based on the reference phase, A phase, and B phase pulse signals output from the encoder. Thus, when controlling the writing of the image by the laser beam from the optical unit, the A phase or the B phase is based on the detection signal from the sensor that detects the tip position of the photosensitive material (paper) wound around the surface of the drum. It is disclosed that a pulse signal is counted and a reference phase from an encoder is set at the tip position of the photosensitive material. With such an arrangement, the exposure apparatus of Patent Document 1 attempts to improve image quality by suppressing an error in the feed amount from the reference phase of the encoder to the image writing position and suppressing a shift in the image writing position. .

  The reference phase from the encoder represents the origin of one rotation of the encoder. When the photosensitive material (paper) wound around the drum is a single sheet as in Patent Document 1, the photosensitive material (paper) is used as the drum. Each time fixing is performed, the front end position of the photosensitive material and the reference phase from the encoder can be set close to each other. However, the photosensitive material is a long sheet substrate that is longer than the entire circumference of the outer peripheral surface of the drum, and an image (pattern) of a specified size while the sheet substrate is continuously conveyed in the longitudinal direction by rotation of the drum. If the reference phase from the encoder and the image writing (drawing) start position are set close to each other along the longitudinal direction of the sheet substrate, the leading edge of each image exposed on the sheet substrate is exposed. The position in the longitudinal direction is limited to a substantially constant interval. Therefore, when the length direction of the designated size is small, the margin between images arranged in the length direction is too long. Conversely, when the lengthwise direction of the specified size is large, there will be a situation in which there is no blank space between the images aligned in the lengthwise direction, and the exposure of the image (pattern) in a well-aligned state on the sheet substrate itself Is impossible. Therefore, when a long sheet substrate is continuously conveyed and images are exposed one after another by drawing control based on the reference phase of the encoder, the size of the image in the long direction is limited.

Japanese Patent Laid-Open No. 11-202716

  A first aspect of the present invention is a device forming apparatus for forming a plurality of electronic devices along a longitudinal direction on a long sheet substrate having flexibility, and a cylindrical outer peripheral surface having a predetermined radius is formed. A rotating drum that moves the sheet substrate in the longitudinal direction by rotating while supporting a part of the sheet substrate on the outer peripheral surface, and a portion of the sheet substrate supported on the outer peripheral surface of the rotating drum In a region, a processing unit that performs processing for forming the electronic device, a head unit that reads a scale formed on a scale unit that rotates together with the rotating drum, and a movement amount of the read scale are counted. A rotation measuring system having a first counting unit that resets a value counted for each rotation of the rotating drum to an initial value, and the first counting unit corresponding to one rotation of the rotating drum. The processing unit starts processing the second counting unit that counts the amount of movement of the scale in a second counting range that is larger than the first counting range to be counted, and the partial region of the sheet substrate. And a control unit that presets a predetermined value in the second counter and controls the processing by the processing unit based on the preset count value of the second counter.

  According to a second aspect of the present invention, there is provided a pattern forming apparatus for forming a plurality of electronic device patterns along a longitudinal direction on a long sheet substrate having flexibility, and a cylindrical outer periphery having a predetermined radius. A rotating drum that moves the sheet substrate in the longitudinal direction by rotating while supporting a part of the sheet substrate on the outer peripheral surface, and the sheet substrate supported on the outer peripheral surface of the rotating drum A processing unit for projecting an energy beam based on design information for exposing the pattern for the electronic device to form the pattern for the electronic device in the partial region of the electronic device, and the electron to be formed in the partial region When a device pattern is divided into a plurality of blocks in the longitudinal direction, a pattern exposed in the block is exposed in accordance with a plurality of deformation forms of the partial region assumed in advance. A correction data storage unit for storing a plurality of correction data for deforming the screen, a mark detection unit for detecting information related to an arrangement state of the plurality of marks formed on the sheet substrate, and the electronic device When the pattern is exposed on the sheet substrate, the correction data is selected and selected from the plurality of correction data stored in the correction data storage unit for each block based on the information on the arrangement state. A control unit that controls the processing unit so that the pattern exposed in the block is deformed using the correction data.

  According to a third aspect of the present invention, there is provided a device forming method for forming a plurality of electronic devices along a longitudinal direction on a long sheet substrate having flexibility, wherein a cylindrical outer peripheral surface having a predetermined radius is formed. And moving the sheet substrate in the longitudinal direction by rotation of a rotating drum that supports a part of the sheet substrate on the outer peripheral surface, and the sheet substrate supported on the outer peripheral surface of the rotating drum. The processing for forming the electronic device is performed on the partial area by the processing device, and the moving amount of the scale formed on the scale unit rotating together with the rotating drum is set as the first count value by the first counting unit. In addition to counting, the count value of the first counting unit is reset to the initial value every rotation of the rotating drum, and the first counting unit counts corresponding to one rotation of the rotating drum. First A second counting unit having a second counting range that is larger than the counting range, and counting the moving amount of the scale as a second counting value; and Each time counting is performed according to the length in the longitudinal direction, the second counting unit is preset to a predetermined value, and the processing is controlled based on the preset count value of the second counting unit. Including.

  According to a fourth aspect of the present invention, there is provided a pattern forming method for forming a plurality of electronic device patterns along a longitudinal direction on a flexible long sheet substrate, wherein the sheet substrate is the long sheet substrate. Moving in a direction, projecting an energy beam based on design information for forming the electronic device pattern on the partial region of the sheet substrate to the partial region of the sheet substrate, and the sheet substrate When the electronic device pattern to be formed is divided into a plurality of blocks in the longitudinal direction, the pattern exposed in the block is deformed according to a plurality of deformation forms of the partial region assumed in advance. Storing a plurality of correction data to be stored in a storage unit, detecting information on an arrangement state of a plurality of marks formed on the sheet substrate, When the electronic device pattern is exposed on the sheet substrate, for each block, the correction data is selected from the plurality of correction data stored in the storage unit based on information on the arrangement state, and selected. And correcting so that the pattern exposed in the block is deformed using the correction data.

It is a schematic block diagram of the device manufacturing system containing the exposure apparatus which performs the exposure process to the board | substrate of 1st Embodiment. It is a perspective view which shows the rotating drum shown in FIG. 1 in the state by which the board | substrate was wound. It is a figure which shows the mark for alignment formed on the drawing line of a spot light, and a board | substrate. FIG. 2 is a partially enlarged view of the exposure apparatus shown in FIG. It is a figure which shows the relationship between the pattern exposed to the exposure area | region on the board | substrate FS, and design information. It is a figure for demonstrating the structure of the scanning unit shown in FIG. It is a block diagram which shows the structure of an encoder counter and a drawing counter. It is a functional block diagram which shows the electrical schematic structure of the exposure apparatus shown in FIG. It is a time chart which shows the relationship between the board | substrate supported and conveyed by the rotating drum which is rotating, the count value of an encoder counter, the count value of a drawing counter, and a preset signal. FIG. 10A is a diagram illustrating an example of a shape type of a block that is first used after deformation, FIG. 10B is a diagram illustrating an example of a shape shape of a block that is repeatedly used, and FIG. It is a figure which shows an example of the kind of shape of the block used last. 6 is a time chart showing the relationship between the substrate, the count value of the encoder counter, the count value of the drawing counter, and the preset signal when the length of the exposure area in the longitudinal direction is shorter than the outer periphery of the rotary drum. FIG. 8 is a circuit block diagram showing a configuration in which a correction function using a correction map is incorporated in the configuration of each counter for the encoder shown in FIG.

  DESCRIPTION OF EMBODIMENTS Preferred embodiments of a device forming method, a pattern forming method, and a device forming apparatus and a pattern forming apparatus for carrying out these methods according to aspects of the present invention will be described in detail below with reference to the accompanying drawings. To do. In addition, the aspect of this invention is not limited to these embodiment, What added the various change or improvement is included. That is, the constituent elements described below include those that can be easily assumed by those skilled in the art and substantially the same elements, and the constituent elements described below can be appropriately combined. In addition, various omissions, substitutions, or changes of the components can be made without departing from the scope of the present invention.

[First Embodiment]
FIG. 1 is a schematic configuration diagram of a device manufacturing system 10 including an exposure apparatus EX that performs an exposure process on a substrate (object to be irradiated) FS according to a first embodiment. In the following description, unless otherwise specified, an XYZ orthogonal coordinate system in which the gravity direction is the Z direction is set, and the X direction, the Y direction, and the Z direction will be described according to the arrows shown in the drawing. The −Z direction is the direction in which gravity works.

  The device manufacturing system 10 is a system (substrate processing apparatus) that manufactures an electronic device by performing predetermined processing (such as exposure processing) on the substrate FS. The device manufacturing system 10 is a manufacturing system in which a manufacturing line for manufacturing electronic devices is constructed. Examples of the electronic device include a flexible display, a film-like touch panel, a film-like color filter for a liquid crystal display panel, flexible wiring, and a flexible sensor. In the present embodiment, a description will be given on the assumption that a flexible display is used as the electronic device. Examples of the flexible display include an organic EL display and a liquid crystal display. The device manufacturing system 10 sends out a substrate FS from a supply roll (not shown) obtained by winding a flexible sheet-like substrate (sheet substrate) FS in a roll shape, and continuously performs various processes on the delivered substrate FS. After the application, the substrate FS after various treatments is wound up by a collection roll (not shown), and has a so-called roll-to-roll structure. The substrate FS has a strip shape in which the moving direction of the substrate FS is the longitudinal direction (long) and the width direction is the short direction (short). The substrate FS sent from the supply roll is sequentially subjected to various processes by the process apparatus PR1, the exposure apparatus EX, the process apparatus PR2, and the like, and is taken up by the collection roll.

  The X direction is a direction (conveyance direction) from the process apparatus PR1 to the process apparatus PR2 through the exposure apparatus EX in a horizontal plane. The Y direction is a direction orthogonal to the X direction in the horizontal plane, and is the width direction (short direction) of the substrate FS. The Z direction is a direction (upward direction) orthogonal to the X direction and the Y direction, and is parallel to the direction in which gravity acts.

  For the substrate FS, for example, a resin film or a foil (foil) made of a metal or alloy such as stainless steel is used. Examples of the resin film material include polyethylene resin, polypropylene resin, polyester resin, ethylene vinyl copolymer resin, polyvinyl chloride resin, cellulose resin, polyamide resin, polyimide resin, polycarbonate resin, polystyrene resin, and vinyl acetate resin. Of these, those including at least one of them may be used. Further, the thickness and rigidity (Young's modulus) of the substrate FS are within a range that does not cause folds or irreversible wrinkles due to buckling in the substrate FS when passing through the transport path in the device manufacturing system 10. Good. As a base material of the substrate FS, a film such as PET (polyethylene terephthalate) or PEN (polyethylene naphthalate) having a thickness of about 25 μm to 200 μm is typical of a suitable sheet substrate.

  Since the substrate FS may receive heat in each process performed by the process apparatus PR1, the exposure apparatus EX, the process apparatus PR2, and the like, it is possible to select a substrate FS having a material whose thermal expansion coefficient is not significantly large. preferable. For example, the thermal expansion coefficient can be suppressed by mixing an inorganic filler with a resin film. The inorganic filler may be, for example, titanium oxide, zinc oxide, alumina, or silicon oxide. The substrate FS may be a single layer of ultrathin glass having a thickness of about 100 μm manufactured by a float process or the like, or a laminate in which the above resin film, foil, etc. are bonded to the ultrathin glass. It may be.

  By the way, the flexibility of the substrate FS means a property that the substrate FS can be bent without being sheared or broken even when a force of its own weight is applied to the substrate FS. . In addition, flexibility includes a property of bending by a force of about its own weight. The degree of flexibility varies depending on the material, size, and thickness of the substrate FS, the layer structure formed on the substrate FS, the environment such as temperature and humidity, and the like. In any case, when the substrate FS is correctly wound around various conveying rollers, rotating drums, and other members for conveying direction provided in the conveying path in the device manufacturing system 10 according to the present embodiment, the substrate FS buckles and folds. If the substrate FS can be smoothly transported without being damaged or broken (breaking or cracking), it can be said to be a flexible range.

  The process apparatus PR1 performs a pre-process on the substrate FS subjected to the exposure process by the exposure apparatus EX. The process apparatus PR1 performs a pre-process on the substrate FS while transporting the substrate FS sent from the supply roll toward the exposure apparatus EX at a predetermined speed. By this pre-process, the substrate FS sent to the exposure apparatus EX becomes a substrate (photosensitive substrate) having a photosensitive functional layer (photosensitive layer) uniformly or selectively formed on the surface thereof.

  This photosensitive functional layer is applied as a solution on the substrate FS and dried to form a layer (film). A typical photosensitive functional layer is a photoresist (in liquid or dry film form), but as a material that does not require development processing, the photosensitivity of the part that has been irradiated with ultraviolet rays is modified. There is a silane coupling agent (SAM), or a photosensitive reducing agent in which a plating reducing group is exposed on a portion irradiated with ultraviolet rays. When a photosensitive silane coupling agent is used as the photosensitive functional layer, the pattern portion exposed to ultraviolet rays on the substrate FS is modified from lyophobic to lyophilic. Therefore, by selectively applying conductive ink (ink containing conductive nanoparticles such as silver or copper) or a liquid containing a semiconductor material on the lyophilic portion, an electronic device for display A pattern layer (a layer on which a pattern is formed) that becomes a circuit or wiring (for example, a source electrode, a drain electrode, and a gate electrode, a semiconductor, insulation, or a connection wiring that constitute a thin film transistor) can do. When a photosensitive reducing agent is used as the photosensitive functional layer, the plating reducing group is exposed on the pattern portion exposed to the ultraviolet rays on the substrate FS. Therefore, after exposure, the substrate FS is immediately immersed in a plating solution containing palladium ions for a certain period of time, so that a pattern layer of palladium is formed (deposited). Such a plating process is an additive process. However, in the case where an etching process as a subtractive process is premised, the substrate FS sent to the exposure apparatus EX has a base material of PET or the like. PEN may be formed by depositing a metallic thin film such as aluminum (Al) or copper (Cu) on the entire surface or selectively, and further laminating a photoresist layer thereon.

  The exposure apparatus (device forming apparatus, pattern forming apparatus) EX is a direct drawing type exposure apparatus that does not use a mask, that is, a so-called raster scan type exposure apparatus (beam scanning apparatus, pattern drawing apparatus). Predetermined representing a circuit or wiring constituting an electronic device for display with respect to the irradiated surface of the substrate FS supplied from the process apparatus PR1 (the surface of the photosensitive functional layer, hereinafter sometimes referred to as a photosensitive surface). The light pattern corresponding to the pattern is irradiated. As will be described in detail later, the exposure apparatus EX transmits the spot light SP of the exposure beam LB on the surface to be irradiated of the substrate FS in a predetermined manner while transporting the substrate FS in the + X direction (sub-scanning direction). While scanning one-dimensionally (main scanning) in the scanning direction (main scanning direction, Y direction), the intensity of the spot light SP is rapidly modulated (ON / OFF) according to design information (pattern data, drawing data, pattern information) PDn. Off). Thereby, a light pattern corresponding to a predetermined pattern such as a circuit or wiring constituting the electronic device is drawn and exposed on the irradiated surface of the substrate FS. That is, the spot light SP is relatively two-dimensionally scanned on the irradiated surface of the substrate FS by the sub-scanning of the substrate FS and the main scanning of the spot light SP, and a predetermined pattern is drawn and exposed on the substrate FS. . In the present embodiment, drawing means that the intensity is modulated while scanning the spot light SP. Since the substrate FS is transported along the transport direction (+ X direction), the exposure region (processed region) W where the pattern is exposed by the exposure apparatus EX is along the longitudinal direction (transport direction) of the substrate FS. Thus, a plurality of gaps (intervals) CLE are provided (see FIG. 3). Since an electronic device is formed in the exposure area W, the exposure area W is also a device formation area.

  The process apparatus PR2 performs a post-process process (for example, application of conductive ink, plating process, development / etching process, etc.) on the substrate FS exposed by the exposure apparatus EX. The process apparatus PR2 performs a post-process on the substrate FS while transporting the substrate FS sent from the exposure apparatus EX toward the collection roll at a predetermined speed. By this subsequent process, a pattern layer of the electronic device is formed on the substrate FS.

  As described above, one pattern layer is generated through each process of the device manufacturing system 10. Therefore, in order to generate an electronic device composed of a plurality of pattern layers, each process of the device manufacturing system 10 as shown in FIG. 1 must be performed at least twice. Therefore, a pattern layer can be laminated | stacked by mounting | wearing another device manufacturing system 10 with the collection | recovery roll by which board | substrate FS was wound up as a supply roll. The substrate FS after processing is in a state in which a plurality of electronic devices are connected along the longitudinal direction of the substrate FS with a predetermined gap CLE. That is, the substrate FS is a multi-sided substrate.

  The collection roll that collects the substrate FS formed in a state where the electronic devices are connected along the longitudinal direction of the substrate FS may be mounted on a dicing apparatus (not shown). The dicing apparatus to which the collection roll is mounted divides (dices) the processed substrate FS for each electronic device (exposure area W that is a device formation area). Thereby, the electronic device which became the several sheet | seat is formed. In addition, as for the dimension of the board | substrate FS, the dimension of the width direction (direction used as a short length) is about 10 cm-2 m, and the dimension of a length direction (long direction) is 10 m or more, for example. In addition, the dimension of the board | substrate FS is not limited to an above-described dimension.

  Next, the exposure apparatus EX will be described in detail. The exposure apparatus EX has a temperature control chamber ECV. This temperature control chamber ECV suppresses a shape change due to the temperature of the substrate FS transported inside by keeping the inside at a predetermined temperature. The temperature control chamber ECV is arranged on the installation surface E of the manufacturing factory via passive or active vibration isolation units SU1, SU2. The anti-vibration units SU1 and SU2 reduce vibration from the installation surface E. The installation surface E may be the floor surface of the factory itself, or may be a surface on an installation base (pedestal) installed on the floor surface in order to obtain a horizontal surface. The exposure apparatus EX includes a substrate transport mechanism 12, a light source device (pulse light source device) 14, an exposure head 16, a control device 18, and a plurality of alignment microscopes ALGm (m = 1, 2, 3 and 4) and a plurality of encoder heads ENja and ENjb (j = 1, 2, 3) constituting the encoder system. The control device 18 controls each part of the exposure apparatus EX. The control device 18 includes a computer and a recording medium on which a program is recorded, and the computer functions as the control device 18 of the present embodiment when the computer executes the program.

  The substrate transport mechanism (transport device) 12 transports the substrate FS transported from the process apparatus PR1 at a predetermined speed in the exposure apparatus EX, and then sends the substrate FS to the process apparatus PR2 at a predetermined speed. The substrate transport mechanism 12 defines a transport path for the substrate FS transported in the exposure apparatus EX. The substrate transport mechanism 12 includes an edge position controller EPC, a drive roller (nip roller) R1, a tension adjustment roller RT1, a rotating drum (cylindrical drum stage) DR, and tension in order from the upstream side (−X direction side) in the transport direction of the substrate FS. An adjustment roller RT2 and drive rollers (nip rollers) R2 and R3 are provided. The substrate FS transferred from the process apparatus PR1 is passed over the rollers in the edge position controller EPC, the drive rollers R1 to R3, the rotary drum DR, and the tension adjustment rollers RT1 and RT2, and is directed to the process apparatus PR2. Are transported.

  The edge position controller EPC adjusts the position in the width direction (the Y direction and the short direction of the substrate FS) of the substrate FS transported from the process apparatus PR1. That is, in the edge position controller EPC, the position at the end (edge) in the width direction of the substrate FS being transported in a state where a predetermined tension is applied is about ± 10 μm to several tens μm with respect to the target position. The position in the width direction of the substrate FS is adjusted so that it falls within the range (allowable range). The edge position controller EPC includes a roller on which the substrate FS is stretched in a state where a predetermined tension is applied, and an edge sensor (end detection unit) (not shown) that detects the position of the edge (edge) in the width direction of the substrate FS. And have. The edge position controller EPC adjusts the position of the substrate FS in the width direction by moving the roller of the edge position controller EPC in the Y direction based on the detection signal detected by the edge sensor. The driving roller R1 rotates while holding both front and back surfaces of the substrate FS conveyed from the edge position controller EPC, and conveys the substrate FS toward the rotating drum DR. The edge position controller EPC moves the roller in the Y direction so that the longitudinal direction of the substrate FS wound around the rotary drum DR is always perpendicular to the central axis AXo of the rotary drum DR, thereby changing the width of the substrate FS. The position in the direction is adjusted appropriately. The edge position controller EPC may appropriately adjust the parallelism between the rotation axis of the roller and the center axis AXo of the edge position controller EPC so as to correct a tilt error in the traveling direction of the substrate FS.

  The rotary drum DR is a cylinder having a central axis AXo extending in the Y direction and extending in a direction intersecting with the direction in which gravity acts (Z direction), and a cylindrical outer peripheral surface having a predetermined radius (constant radius) from the central axis AXo. This is a drum stage. The rotating drum DR rotates around the central axis AXo while supporting (holding) a part of the substrate FS by bending the outer surface (circumferential surface, cylindrical surface) into a cylindrical surface shape in the longitudinal direction. Then, the substrate FS is transported in the + X direction. The rotary drum DR supports an area (part) on the substrate FS on which the beam LB (spot light SP) from the exposure head 16 is projected on the outer peripheral surface thereof. The rotating drum DR supports (closely holds) the substrate FS in the longitudinal direction from the surface (back surface) side opposite to the surface (surface on which the photosensitive surface is formed) on which the electronic device is formed. On both sides in the Y direction of the rotating drum DR, shafts Sft supported by annular bearings are provided so that the rotating drum DR rotates around the central axis AXo. The shaft Sft rotates at a constant rotational speed around the central axis AXo when a rotational torque from a rotation driving source (not shown) (for example, a motor or a speed reduction mechanism) controlled by the control device 18 is applied. For convenience, a plane including the central axis AXo and parallel to the YZ plane is referred to as a central plane Poc.

  The drive rollers R2 and R3 are arranged at a predetermined interval along the transport direction (+ X direction) of the substrate FS, and give a predetermined slack (play) to the exposed substrate FS. Similarly to the drive roller R1, the drive rollers R2 and R3 rotate while holding both front and back surfaces of the substrate FS, and transport the substrate FS toward the process apparatus PR2. The tension adjusting rollers RT1 and RT2 are urged in the −Z direction, and apply a predetermined tension in the longitudinal direction to the substrate FS that is wound around and supported by the rotary drum DR. Thereby, the longitudinal tension applied to the substrate FS applied to the rotary drum DR is stabilized within a predetermined range. The control device 18 rotates the drive rollers R1 to R3 by controlling a rotation drive source (not shown) (for example, a motor, a speed reducer, etc.). The rotation axes of the drive rollers R1 to R3 and the rotation axes of the tension adjustment rollers RT1 and RT2 are in principle parallel to the central axis AXo of the rotary drum DR.

  The light source device 14 has a light source (pulse light source) and emits a pulsed beam (pulse beam, energy beam, laser) LB. This beam LB is ultraviolet light having a peak wavelength in a wavelength band of 370 nm or less, and the light emission frequency (oscillation frequency) of the beam (pulse light) LB is Fe. The beam LB emitted from the light source device 14 enters the exposure head 16. The light source device 14 emits and emits the beam LB at the emission frequency Fe under the control of the control device 18. As the light source device 14, a semiconductor laser element that generates pulsed light in the infrared wavelength range, a fiber amplifier that amplifies the pulsed light in the infrared wavelength range, and the amplified pulsed light in the infrared wavelength range is converted into pulsed light in the ultraviolet wavelength range. A fiber amplifier laser light source composed of a wavelength conversion element (harmonic generation element) or the like for conversion into a light source may be used. In that case, high-intensity ultraviolet pulsed light having an oscillation frequency Fe of several hundred MHz and an emission time of one pulse of about picoseconds can be obtained. Although the light source device 14 emits the pulsed beam LB, it may be a light source device (CW laser, high-intensity ultraviolet lamp, etc.) that emits a continuous light beam LB.

  The exposure head 16 includes a plurality of scanning units MDn (n = 1, 2,..., 6) on which the beams LB from the light source device 14 are respectively incident. The exposure head 16 scans the spot light SP in the Y direction while irradiating a part of the substrate FS supported by the outer peripheral surface of the rotary drum DR with the plurality of scanning units MDn (MD1 to MD6). To do. As a result, a predetermined pattern can be drawn on the irradiated surface of the substrate FS (on the substrate FS). The exposure head 16 is a so-called multi-beam type exposure head in which a plurality of scanning units MDn (MD1 to MD6) having the same configuration are arranged. Each scanning unit MDn (MD1 to MD6) draws a pattern on the substrate FS using the beam from the light source device 14. Hereinafter, the beam LB from the light source device 14 incident on the scanning unit MDn (MD1 to MD6) may be represented by LBn (LB1 to LB6). Therefore, the beam LBn incident on the scanning unit MD1 is represented by LB1, and similarly, the beam LBn incident on the scanning units MD2 to MD6 is represented by LB2 to LB6.

  As shown in FIG. 2, the plurality of scanning units MDn (MD1 to MD6) are arranged in a predetermined arrangement relationship. The plurality of scanning units MDn (MD1 to MD6) are arranged in a staggered arrangement in two rows in the transport direction (X direction) of the substrate FS across the center plane Poc. The odd-numbered scanning units MD1, MD3, MD5 are arranged on the upstream side (−X direction side) in the transport direction of the substrate FS with respect to the center plane Poc, and 1 with a predetermined interval along the Y direction. Arranged in columns. The even-numbered scanning units MD2, MD4, MD6 are arranged on the downstream side (+ X direction side) in the transport direction of the substrate FS with respect to the center plane Poc, and are arranged in a row at a predetermined interval along the Y direction. Are arranged. The odd-numbered scanning units MD1, MD3, and MD5 and the even-numbered scanning units MD2, MD4, and MD6 are provided symmetrically with respect to the center plane Poc.

  Each scanning unit MDn (MD1 to MD6) projects the beam LBn (LB1 to LB6) from the light source device 14 toward the substrate FS, and the projected beam LBn (LB1 to LB6) on the irradiated surface of the substrate FS. To converge on the spot light SP. Each scanning unit MDn (MD1 to MD6) scans the spot light SP converged on the substrate FS in one dimension (Y direction) by the rotating polygon mirror PM (see FIG. 6). The spot light SP of the beam LBn (LB1 to LB6) is scanned one-dimensionally in the main scanning direction (Y direction) on the irradiated surface of the substrate FS by the rotated polygon mirror PM of each scanning unit MDn (MD1 to MD6). Linear drawing lines (scanning lines) SLn (SL1 to SL6) on which a pattern for one line is drawn are defined on the irradiated surface of the substrate FS. The drawing lines SLn (SL1 to SL6) indicate the scanning trajectory of the spot light SP of the beam LBn (LB1 to LB6) irradiated on the substrate FS. The configuration of the scanning unit (scanning module, beam scanning unit) MDn will be described in detail later.

  The scanning unit MD1 scans the spot light SP of the beam LB1 in the main scanning direction (Y direction) along the drawing line SL1, and similarly, the scanning units MD2 to MD6 scan the spot light SP of the beams LB2 to LB6. Scan in the main scanning direction (Y direction) along SL2 to SL6. The drawing lines (scanning lines) SLn (SL1 to SL6) of the plurality of scanning units MDn (MD1 to MD6) are related to the Y direction (the width direction of the substrate FS, the scanning direction) as shown in FIGS. They are set to be joined together without being separated from each other. The beams LBn (LB1 to LB6) incident on the scanning units MDn (MD1 to MD6) are linearly polarized light (P-polarized light or S-polarized light) polarized in a predetermined direction. In the present embodiment, P-polarized light is used. The beam is incident.

  As shown in FIGS. 2 and 3, each scanning unit MDn (MD1 to MD6) covers the scanning area so that all of the plurality of scanning units MDn (MD1 to MD6) cover all of the width direction of the exposure area W. Sharing. Thereby, the plurality of scanning units MDn (MD1 to MD6) draw a pattern for each of the plurality of divided exposure areas divided in the width direction of the substrate FS. For example, when the scanning width in the Y direction (the length of the drawing line SLn) by one scanning unit MDn is about 20 to 60 mm, three odd numbered scanning units MD1, MD3, MD5 and even numbered scanning unit MD2 are used. , MD4 and MD6, a total of six scanning units MDn, are arranged in the Y direction, so that the width in the Y direction that can be drawn is increased to about 120 to 360 mm. In principle, the lengths (scanning lengths) of the respective drawing lines SLn (SL1 to SL6) are the same. That is, when the drawing magnification is the initial value (no magnification correction), the scanning distances of the spot lights SP of the beams LB1 to LB6 scanned along the drawing lines SL1 to SL6 are the same. If it is desired to increase the width of the exposure region W, it can be handled by preparing a scanning unit MDn in which the length of the drawing line SLn itself is increased or increasing the number of scanning units MDn arranged in the Y direction. .

  Each drawing line SLn (SL1 to SL6) is set slightly shorter than the maximum length (maximum scanning length) that the spot light SP can actually scan on the irradiated surface. For example, if the scanning length of the drawing line SLn on which pattern drawing is possible is 30 mm when the drawing magnification in the main scanning direction (Y direction) is an initial value (no magnification correction), the maximum scanning on the irradiated surface of the spot light SP The length is set to about 31 mm with a margin of about 0.5 mm on each of the scanning start point (drawing start point) side and the scanning end point (drawing end point) side of the drawing line SLn. By setting in this way, within the range of the maximum scanning length of 31 mm of the spot light SP, the position of the 30 mm drawing line SLn is shifted (finely adjusted) in the main scanning direction, or the drawing magnification is finely adjusted. Is possible. The maximum scanning length of the spot light SP is not limited to 31 mm, and is determined mainly by the aperture and position of the fθ lens FT (see FIG. 6) provided after the polygon mirror PM in the scanning unit MDn.

  The plurality of drawing lines SLn (SL1 to SL6) are arranged in a staggered arrangement in two rows in the circumferential direction of the rotary drum DR with the center plane Poc interposed therebetween. The odd-numbered drawing lines SL1, SL3, SL5 are positioned on the irradiated surface on the upstream side (−X direction side) in the transport direction of the substrate FS wound around the rotary drum DR with respect to the center plane Poc. The even-numbered drawing lines SL2, SL4, and SL6 are positioned on the irradiated surface on the downstream side (+ X direction side) in the transport direction of the substrate FS wound around the rotary drum DR with respect to the center plane Poc. The drawing lines SL1 to SL6 are substantially parallel along the width direction (Y direction) of the substrate FS, that is, along the central axis AXo of the rotary drum DR.

  The drawing lines SL1, SL3, and SL5 are arranged in a line on a straight line at a predetermined interval along the width direction (scanning direction) of the substrate FS. Similarly, the drawing lines SL2, SL4, and SL6 are arranged in a line on a straight line at a predetermined interval along the width direction (scanning direction) of the substrate FS. At this time, the drawing line SL2 is arranged between the drawing line SL1 and the drawing line SL3 in the width direction of the substrate FS. Similarly, the drawing line SL3 is arranged between the drawing line SL2 and the drawing line SL4 in the width direction of the substrate FS. The drawing line SL4 is arranged between the drawing line SL3 and the drawing line SL5 in the width direction of the substrate FS, and the drawing line SL5 is arranged between the drawing line SL4 and the drawing line SL6 in the width direction of the substrate FS. Is done.

  The scanning direction of the spot light SP of the beams LB1, LB3, and LB5 scanned along each of the odd-numbered drawing lines SL1, SL3, and SL5 is a one-dimensional direction and is the −Y direction. The scanning direction of the spot light SP of the beams LB2, LB4, and LB6 scanned along the even-numbered drawing lines SL2, SL4, and SL6 is a one-dimensional direction and is a + Y direction. Therefore, the scanning direction of the spot light SP scanned along the drawing lines SL1, SL3, SL5 and the scanning direction of the spot light SP scanned along the drawing lines SL2, SL4, SL6 are opposite to each other. Yes. Thus, the drawing start point side ends of the drawing lines SL1, SL3, and SL5 and the drawing lines SL2, SL4, and SL6 drawing start point side ends are adjacent to each other in the Y direction or overlap with a predetermined length. To do. In addition, the end of the drawing lines SL3 and SL5 on the drawing end point side and the end of the drawing lines SL2 and SL4 on the drawing end point side are adjacent to each other in the Y direction or overlap with a predetermined length. The length (predetermined length) that partially overlaps the ends of the drawing lines SLn adjacent in the Y direction is, for example, the drawing start point or the drawing end point with respect to the length of each drawing line SLn. Including the range of several percent or less in the Y direction is preferable. Note that joining the drawing lines SLn in the Y direction means a state in which the ends in the Y direction of patterns drawn on the substrate FS are exactly adjacent to each other in the drawing lines SLn adjacent in the Y direction, or a part thereof (Predetermined length) means an overlapping state.

  In the case of the present embodiment, since the beam LB (LBn) from the light source device 14 is pulsed light, the spot light SP projected on the drawing line SLn during the main scanning is the oscillation frequency of the beam LB (LBn). It becomes discrete according to Fe. Therefore, it is necessary to overlap the spot light SP projected by one pulse light of the beam LB (LBn) and the spot light SP projected by the next one pulse light in the main scanning direction. The amount of overlap is set by the size φ of the spot light SP, the scanning speed Vs of the spot light SP, and the oscillation frequency Fe of the beam LB (LBn), but in this embodiment, it is about φ / 2. Therefore, also in the sub-scanning direction (direction perpendicular to the drawing line SLn), the substrate FS effectively applies the spot light SP between one scanning of the spot light SP along the drawing line SLn and the next scanning. It is desirable to set so as to move by a distance of approximately ½ or less of a large size φ. Further, the exposure amount to the photosensitive functional layer on the substrate FS can be set by adjusting the peak value of the beam LB (LBn). However, the exposure amount can be set in a situation where the intensity of the beam LB (LBn) cannot be increased. When it is desired to increase, it is caused by any one of a decrease in the scanning speed Vs of the spot light SP in the main scanning direction, an increase in the oscillation frequency Fe of the beam LB (LBn), or a decrease in the transport speed Vt of the substrate FS in the sub-scanning direction. The overlap amount of the spot light SP in the main scanning direction or sub-scanning direction may be increased to ½ or more of the effective size φ. The scanning speed Vs of the spot light SP in the main scanning direction increases in proportion to the rotational speed (rotational speed Vp) of the polygon mirror PM.

The width (dimension in the X direction) of the drawing line SLn in the sub-scanning direction is a thickness corresponding to the size (diameter) φ of the spot light SP. For example, when the size φ of the spot light SP is 3 μm, the width of each drawing line SLn in the sub-scanning direction is also 3 μm. When the spot light SP is projected along the drawing line SLn while being overlapped by ½ of the size φ of the spot light SP, the drawing lines SLn (for example, the drawing line SL1 and the drawing line SL2) adjacent in the Y direction are adjacent to each other. However, it is better to overlap by φ / 2. Note that the effective size φ of the spot light SP is 1 / e ² (or ½ the full width at half maximum) of the peak intensity of the spot light SP when the intensity distribution of the spot light SP is approximated by a Gaussian distribution. Determined by.

  Each scanning unit MDn (MD1 to MD6) applies the beam LBn (LB1 to LB6) to the substrate FS so that the beam LBn (LB1 to LB6) is perpendicular to the irradiated surface of the substrate FS at least in the XZ plane. Irradiate toward. That is, each scanning unit MDn (MD1 to MD6) moves in the XZ plane so as to advance toward the central axis AXo of the rotary drum DR, that is, so as to be parallel to the normal line of the irradiated surface of the substrate FS. LBn (LB1 to LB6) is irradiated (projected) to the substrate FS. Each scanning unit MDn (MD1 to MD6) has a beam LBn (LB1 to LB6) that irradiates the drawing line SLn (SL1 to SL6) with respect to the surface to be irradiated of the substrate FS in a plane parallel to the YZ plane. The beams LBn (LB1 to LB6) are irradiated toward the substrate FS so as to be vertical. That is, the beam LBn (LB1 to LB6) projected onto the substrate FS is scanned in a telecentric state with respect to the main scanning direction of the spot light SP on the irradiated surface. Here, a line perpendicular to the irradiated surface of the substrate FS through a specific point (for example, a middle point) of a predetermined drawing line SLn (SL1 to SL6) defined by each scanning unit MDn (MD1 to MD6) (or The optical axis) is also referred to as the irradiation center axis Len (Le1 to Le6) (see FIG. 2). Therefore, the beam LBn projected from each scanning unit MDn onto the irradiated surface of the substrate FS so as to pass a specific point on the drawing line SLn is coaxial with the irradiation center axis Len.

  Each irradiation central axis Len (Le1 to Le6) is a line connecting the drawing line SLn (SL1 to SL6) and the central axis AXo on the XZ plane. The irradiation center axes Le1, Le3, Le5 of the odd-numbered scanning units MD1, MD3, MD5 are in the same direction on the XZ plane. The irradiation center axes Le2, Le4, Le6 of the odd-numbered scanning units MD2, MD4, MD6 are in the same direction on the XZ plane. In the XZ plane, the irradiation center axes Le1, Le3, Le5 and the irradiation center axes Le2, Le4, Le6 are set so that the angle with respect to the center plane Poc becomes ± θ1 (FIG. 1, FIG. 2).

  As shown in FIG. 3, the alignment microscope ALGm (ALG1 to ALG4) shown in FIG. 1 has positional information (m = 1, 2, 3, 4) on a plurality of alignment marks MKm (m = 1, 2, 3, 4) formed on the substrate FS. Mark position information) and is provided along the Y direction. The marks MKm (MK1 to MK4) are reference marks for relatively aligning (aligning) the predetermined pattern drawn in the exposure region W on the irradiated surface of the substrate FS and the substrate FS. The plurality of alignment microscopes ALGm (ALG1 to ALG4) detect the mark MKm (MKm (MK1 to MK4)) in order to detect the mark position information of the plurality of marks MKm (MK1 to MK4) on the substrate FS supported by the circumferential surface of the rotary drum DR. MK1 to MK4) are imaged. The alignment microscope ALGm (ALG1 to ALG4) is provided on the upstream side (−X direction side) in the transport direction of the substrate FS with respect to the irradiated region (drawing lines SL1 to SL6) of the spot light SP on the substrate FS by the exposure head 16. It has been.

  The alignment microscope ALGm (ALG1 to ALG4) is a magnified image of the observation region Vwm (Vw1 to Vw4) including the light source that projects the illumination light for alignment onto the substrate FS and the mark MKm (MK1 to MK4) on the surface of the substrate FS. An observation optical system (including an objective lens) to be obtained, and an image sensor such as a CCD or CMOS that captures an enlarged image of the observation optical system with a high-speed shutter while the substrate FS is moving in the transport direction. Imaging signals captured by the alignment microscopes ALGm (ALG1 to ALG4) are sent to the control device 18. The control device 18 detects the mark MKm (MK1 to MK4) on the substrate FS by analyzing the image of the imaging signal. Then, the control device 18 detects the mark MKm (MK1 to MK4) detected by image analysis of the imaging signal captured by each alignment microscope ALGm (ALG1 to ALG4), and the rotating drum DR at the moment when the alignment microscope ALGm captures the image. The mark position information of the marks MKm (MK1 to MK4) on the substrate FS is detected with high accuracy based on the rotation position information (count value CD1 based on encoders EN1a and EN1b described later). This mark position information includes position information of the substrate FS. Note that the illumination light for alignment is light in a wavelength region that has little sensitivity to the photosensitive functional layer on the substrate FS, for example, light having a wavelength of about 500 to 800 nm.

  A plurality of marks MKm (MK1 to MK4) are provided around each exposure region W. A plurality of marks MK1 and MK4 are formed on both sides of the exposure region W in the width direction of the substrate FS at a constant interval Dh along the longitudinal direction of the substrate FS. The mark MK1 is formed on the −Y direction side in the width direction of the substrate FS, and the mark MK4 is formed on the + Y direction side in the width direction of the substrate FS. Such marks MK1 and MK4 are arranged so as to be at the same position in the longitudinal direction (X direction) of the substrate FS when the substrate FS is not deformed due to a large tension or a thermal process. Is done. Further, the marks MK2 and MK3 are between the mark MK1 and the mark MK4, and in the width direction (short direction) of the substrate FS in the gap (blank portion) CLE between the + X direction side and the −X direction side of the exposure region W. Are formed along. The mark MK2 is formed on the −Y direction side in the width direction of the substrate FS, and the mark MK3 is formed on the + Y direction side of the substrate FS. Further, the distance in the Y direction between the mark MK1 and the mark MK2 in the gap CLE arranged at the −Y direction side edge of the substrate FS, the distance in the Y direction between the mark MK2 and the mark MK3 in the gap CLE, and the substrate FS The interval in the Y direction between the mark MK4 arranged at the side end in the + Y direction and the mark MK3 in the gap CLE is set to the same distance. These marks MKm (MK1 to MK4) may be formed together when the pattern layer of the first layer is formed. For example, when the pattern of the first layer is exposed, the pattern for the mark MKm may be exposed around the exposure area W where the pattern is exposed. The mark MKm may be formed in the exposure area W. For example, it may be formed in the exposure area W along the outline of the exposure area W. In addition, a pattern portion at a specific position or a specific shape portion in the pattern of the electronic device formed in the exposure region W may be used as the alignment mark MKm.

  FIG. 3 shows an arrangement of a plurality of marks MKm (MK1 to MK4) when the exposure area W is not deformed. Therefore, when the substrate FS is deformed due to a large tension or is affected by a thermal process, and the exposure region W is deformed (distorted), the plurality of marks MKm (MK1 to MK4) are arranged with respect to the substrate FS. Will also be deformed (distorted). This is because even when each detection position (stationary coordinate system) of the alignment microscopes ALG1 to ALG4 fixed in the apparatus is used as a reference, the arrangement state of the plurality of marks MKm (MK1 to MK4) is deformed (distorted). ) Means to be observed.

  The plurality of alignment microscopes ALG1 to ALG4 are provided in order of ALG1 to ALG4 from the −Y direction side of the substrate FS corresponding to the positions of the plurality of marks MK1 to MK4. Specifically, the alignment microscope ALG1 is arranged so that the mark MK1 is positioned in the observation region (detection region) Vw1 by the objective lens with respect to the width direction of the substrate FS (with respect to the Y direction). Similarly, the alignment microscopes ALG2 to ALG4 are arranged such that the marks MK2 to MK4 are located in the observation direction Vw2 to Vw4 by the objective lens in the width direction (with respect to the Y direction) of the substrate FS. In the plurality of alignment microscopes ALGm (ALG1 to ALG4), the distance between the exposure position (drawing lines SL1 to SL6) and the observation region Vwm (Vw1 to Vw4) of the alignment microscope ALGm (ALG1 to ALG4) is the exposure region in the X direction. It is provided to be shorter than the length of W in the X direction. The number of alignment microscopes ALGm provided in the Y direction can be changed according to the number of marks MKm formed in the width direction of the substrate FS. The size of the observation region Vwm on the surface to be irradiated of the substrate FS is set according to the size of the mark MKm and the alignment accuracy (position measurement accuracy), but is about 100 to 500 μm square.

  As shown in FIGS. 1 and 2, scale portions SDa and SDb having scales formed in an annular shape over the entire circumferential direction of the outer peripheral surface of the rotary drum DR are provided at both ends of the rotary drum DR. Yes. The scale portions SDa and SDb are diffraction gratings in which concave or convex lattice lines (scales) are engraved at a constant pitch (for example, 20 μm) in the circumferential direction of the outer peripheral surface of the rotary drum DR. Composed. The scale portions SDa and SDb rotate integrally with the rotary drum DR around the central axis AXo. A plurality of encoder heads (read head portions, head portions) ENja (EN1a to EN3a) and ENjb (EN1b to EN3b) are provided so as to face the scale portions SDa and SDb. These encoder heads (hereinafter also simply referred to as encoders) ENja and ENjb optically detect the rotational position of the rotary drum DR. Three encoders ENja (EN1a to EN3a) are provided to face the scale portion SDa provided at the −Y direction end of the rotating drum DR, and provided at the + Y direction end of the rotating drum DR. Three encoders ENjb (EN1b to EN3b) are provided facing the scale part SDb. The encoders EN1a and EN1b are arranged at the same position with respect to the rotation direction (X direction) of the rotary drum DR. Similarly, the encoders EN2a and EN2b and the encoders EN3a and EN3b are also arranged at the same position with respect to the rotation direction (X direction) of the rotary drum DR.

  The encoders ENja and ENjb project measurement light beams toward the scale portions SDa and SDb, and photoelectrically detect the reflected light beams (diffracted light), thereby responding to changes in the circumferential position of the scale portions SDa and SDb. The detected signal (two-phase signal) is output to the control device 18. The control device 18 counts the detection signal with the encoder counter ECN (ECN1 to ECN3 and the drawing counter SCN (SCN2, SCN3) shown in FIG. 7, thereby moving the scale units SDa and SDb, that is, rotating. The rotational angle position and angle change of the drum DR, or the movement amount of the substrate FS can be measured with submicron resolution, and periodic changes in the detection signals of the encoders ENja and ENjb are recorded in the scale portions SDa and SDb. Therefore, the encoder counters ECN1 to ECN3 and the drawing counters SCN2 and SCN3 count (count) the movement of the scales SDa and SDb read by the encoders ENja and ENjb. Measure the rotational angle position of the rotating drum DR The plurality of encoder counters ECN1 to ECN3 individually count (count) the detection signals from the plurality of encoders ENja (EN1a to EN3a) and ENjb (EN1b to EN3b), respectively. , SCN3 individually counts (detects) each detection signal from encoders EN2a, EN2b, encoders EN3a, EN3b, encoder counters ECN1 to ECN3 and drawing counters SCN2, SCN2 will be described in detail later. The count values (count values) of the counters ECN1 to ECN3 are set to CD1 to CD3, and the count values (count values) of the drawing counters SCN2 and SCN3 are set to CW2 and CW3. The counter ECN constituting the rotation measurement system.

  The encoders EN1a and EN1b are arranged on the installation direction line Lx1 with respect to the XZ plane. The installation azimuth line Lx1 is a line connecting the projection positions (reading positions) of the measurement light beams of the encoders EN1a and EN1b to the scale portions SDa and SDb and the central axis AXo with respect to the XZ plane. Further, the installation orientation line Lx1 is a line connecting the observation region Vwm (Vw1 to Vw4) of each alignment microscope ALGm (ALG1 to ALG4) and the central axis AXo on the XZ plane. That is, each alignment microscope ALGm (ALG1 to ALG4) is arranged on the installation direction line Lx1 in the XZ plane.

  The encoders EN2a and EN2b are provided on the upstream side in the transport direction of the substrate FS with respect to the center plane Poc, and are provided on the downstream side in the transport direction of the substrate FS from the encoders EN1a and EN1b. The encoders EN2a and EN2b are arranged on the installation direction line Lx2 with respect to the XZ plane. The installation azimuth line Lx2 is a line connecting the projection positions (reading positions) of the measurement light beams on the scale portions SDa and SDb of the encoders EN2a and EN2b and the central axis AXo with respect to the XZ plane. The installation azimuth line Lx2 overlaps with the irradiation center axes Le1, Le3, and Le5 at the same angular position with respect to the XZ plane.

  The encoders EN3a and EN3b are provided on the downstream side in the transport direction of the substrate FS with respect to the center plane Poc. The encoders EN3a and EN3b are arranged on the installation direction line Lx3 with respect to the XZ plane. The installation azimuth line Lx3 is a line connecting the projection positions (reading positions) of the measurement light beams on the scale portions SDa and SDb of the encoders EN3a and EN3b and the central axis AXo with respect to the XZ plane. The installation azimuth line Lx3 overlaps with the irradiation center axes Le2, Le4, and Le6 at the same angular position with respect to the XZ plane. The installation azimuth line Lx2 and the installation azimuth line Lx3 are set so that the angle is ± θ1 with respect to the center plane Poc in the XZ plane (see FIGS. 1 and 2).

  Incidentally, the substrate FS is wound inside the scale portions SDa and SDb at both ends of the rotary drum DR. In FIG. 1, the radius from the central axis AXo of the outer peripheral surface of the scale portions SDa and SDb is set smaller than the radius from the central axis AXo of the outer peripheral surface of the rotary drum DR. However, as shown in FIG. 2, the outer peripheral surfaces of the scale portions SDa and SDb may be set so as to be flush with the outer peripheral surface of the substrate FS wound around the rotary drum DR. That is, the radius (distance) from the central axis AXo of the outer peripheral surfaces of the scale parts SDa and SDb and the radius (distance) from the central axis AXo of the outer peripheral surface (irradiated surface) of the substrate FS wound around the rotary drum DR May be set to be the same. Accordingly, each encoder ENja (EN1a to EN3a) and ENjb (EN1b to EN3b) can detect the scale portions SDa and SDb at the same radial position as the irradiated surface of the substrate FS wound around the rotary drum DR. . Therefore, Abbe error caused by the difference between the measurement positions by the encoders ENja and ENjb and the processing positions (drawing lines SL1 to SL6) in the radial direction of the rotary drum DR can be reduced.

  However, since the thickness of the substrate FS as the irradiated body is greatly different from ten to several hundred μm, the radius of the outer peripheral surface of the scale portions SDa and SDb and the outer peripheral surface of the substrate FS wound around the rotary drum DR It is difficult to always make the radius the same. Therefore, in the case of the scale portions SDa and SDb shown in FIG. 2, the radius of the outer peripheral surface (scale surface) is set to coincide with the radius of the outer peripheral surface of the rotary drum DR. Furthermore, the scale portions SDa and SDb can be formed of individual disks, and the disks (scale disks) can be coaxially attached to the shaft Sft of the rotary drum DR. Even in this case, it is preferable to align the radius of the outer peripheral surface (scale surface) of the scale disk and the radius of the outer peripheral surface of the rotary drum DR so that the Abbe error falls within the allowable value.

  FIG. 4 is a partially enlarged view of the exposure apparatus EX. The exposure apparatus EX further includes a plurality of light introducing optical systems BDUn (n = 1, 2,..., 6) and a main body frame UB. The plurality of light introducing optical systems BDUn (BDU1 to BDU6) guide the beam LB (LBn) from the light source device 14 to the plurality of scanning units MDn (MD1 to MD6). The light introducing optical system BDU1 guides the beam LB1 to the scanning unit MD1, and similarly, the light introducing optical systems BDU2 to BDU6 guide the beams LB2 to LB6 to the scanning units MD2 to MD6. Each light introducing optical system BDUn (BDU1 to BDU6) corresponds to the beam LBn (LB1 to LB6) so that the optical axis of the beam LBn (LB1 to LB6) is coaxial with the irradiation center axis Len (Le1 to Le6). It injects into scanning unit MDn (MD1-MD6). That is, the beam LB1 incident on the scanning unit MD1 from the light introducing optical system BDU1 is coaxial with the irradiation center axis Le1. Similarly, beams LB2 to LB6 incident on the scanning units MD2 to MD6 from the light introducing optical systems BDU2 to BDU6 are coaxial with the irradiation center axes Le2 to Le6. The beam LB from the light source device 14 is branched into each light introducing optical system BDUn (BDU1 to BDU6) by an optical member such as a beam splitter or a switching optical deflector (for example, an acoustooptic modulator). Or selectively incident.

  The plurality of light introducing optical systems BDUn (BDU1 to BDU6) have a plurality of drawing optical elements AOMn (n = 1, 2,..., 6). The plurality of drawing optical elements AOMn (AOM1 to AOM6) is a matrix of the intensity of the beam LBn (LB1 to LB6) guided to the plurality of scanning units MDn (MD1 to MD6) and the pattern to be drawn on the substrate FS in units of pixels. It is modulated (ON / OFF) at high speed according to design information PDn (PD1 to PD6) as two-dimensional bitmap data decomposed into a shape. The light introducing optical system BDU1 has a drawing optical element AOM1, and similarly, the light introducing optical systems BDU2 to BDU6 have drawing optical elements AOM2 to AOM6. The drawing optical element (intensity modulation unit) AOMn is an acousto-optic modulator having transparency to the beam LB. The drawing optical element AOMn uses an ultrasonic signal (high frequency signal) to diffract the incident beam LB from the light source device 14 at a diffraction angle corresponding to the frequency of the high frequency, and thus travels the optical path of the beam LB, that is, travels. The beam is emitted as a first-order diffracted beam whose direction is changed. The drawing optical elements AOMn (AOM1 to AOM6) diffract the incident beam LB in accordance with on / off of a drive signal (high frequency signal) from an AOM drive circuit 50 (see FIG. 8) provided in the exposure apparatus EX. The generation of the first-order diffracted beam (beam LBn) is turned on / off.

  The drawing optical element AOMn (AOM1 to AOM6) allows the incident light beam LB from the light source device 14 to pass through without being diffracted when the drive signal (high-frequency signal) from the control device 18 is off. The beam LB is guided to an absorber (not shown) provided in the light introducing optical system BDUn (BDU1 to BDU6). This absorber is an optical trap that absorbs the laser beam LB for suppressing leakage of the laser beam LB to the outside. Therefore, when the drive signal is OFF, the beam (0th order light, 0th order beam) LB transmitted through the drawing optical element AOMn (AOM1 to AOM6) does not enter the scanning unit MDn (MD1 to MD6). That is, the intensity of the beam LBn (LB1 to LB6) passing through the scanning unit MDn (MD1 to MD6) is low (zero). This means that when viewed on the irradiated surface of the substrate FS, the intensity of the spot light SP of the beam LBn (LB1 to LB6) irradiated on the irradiated surface is modulated to a low level (zero). To do.

  On the other hand, the drawing optical elements AOMn (AOM1 to AOM6) generate first-order diffracted light that diffracts the incident beam LB when the drive signal (high-frequency signal) from the AOM drive circuit 50 is on. The beam LBn (LB1 to LB6) which is the next diffracted light is guided to the scanning unit MDn (MD1 to MD6). Therefore, when the drive signal is on, the intensity of the beam LBn (LB1 to LB6) passing through the scanning unit MDn (MD1 to MD6) is high. This means that when viewed on the irradiated surface of the substrate FS, the intensity of the spot light SP of the beam LBn (LB1 to LB6) irradiated on the irradiated surface is modulated to a high level. Thus, the drawing optical elements AOMn (AOM1 to AOM6) can be switched on / off by applying the on / off drive signal to the drawing optical elements AOMn (AOM1 to AOM6). The scanning unit MDn (MD1 to MD6) and the drawing optical element AOMn (AOM1 to AOM6) constitute a processing unit and a processing apparatus for performing processing (drawing processing) for forming an electronic device on the substrate FS.

  The AOM driving circuit 50 applies each drawing optical element AOMn (AOM1 to AOM6) based on design information PDn (PD1 to PD6) corresponding to a pattern drawn by each scanning unit MDn (MD1 to MD6). The drive signal (high frequency signal) is turned on / off. The design information PDn (PD1 to PD6) is provided for each scanning unit MDn (MD1 to MD6). The design information PDn (PD1 to PD6) is stored in the design information storage unit 36 (see FIG. 8) of the control device 18 and is supplied from the control device 18 to the AOM drive circuit 50.

  Here, the design information PDn (PD1 to PD6) will be briefly described. In the design information PDn (PD1 to PD6), a pattern drawn by each scanning unit MDn is set according to the size φ of the spot light SP. The pixel is divided according to the size of pixels, and each of the plurality of pixels is represented by logical information (pixel data) corresponding to the pattern. That is, in the design information PDn (PD1 to PD6), the direction along the scanning direction (main scanning direction, Y direction) of the spot light SP is the row direction, and along the transport direction (sub-scanning direction, X direction) of the substrate FS. This is bitmap data composed of logical information of a plurality of pixels that are two-dimensionally decomposed so that the direction is the column direction. The logical information of this pixel is 1-bit data of “0” or “1”. The logical information “0” means that the intensity of the spot light SP irradiated on the substrate FS is lowered, and the logical information “1” indicates that the intensity of the spot light SP irradiated on the substrate FS is high. Means level. Therefore, when the logical information of the pixel is “0”, the AOM drive circuit 50 turns off the drive signal (high frequency signal) applied to the drawing optical element AOMn, and when the logical information of the pixel is “1”. Turns on the drive signal (high frequency signal) applied to the drawing optical element AOMn.

  The pixels for one column of the design information PDn (PD1 to PD6) correspond to one drawing line SLn, and are spots projected onto the irradiated surface of the substrate FS along one drawing line SLn. The intensity of the light SP is modulated according to each piece of logical information of one column of pixels. That is, the drawing line SLn is a scanning line in which the spot light SP is scanned with its intensity modulated by the logical information of the pixels for one column, that is, drawn. The logical information of the pixels for one column is also called serial data DLn. Therefore, the design information PDn is bitmap data in which a plurality of serial data DLn such as serial data DLn in the first column, serial data DLn in the second column,. The serial data DLn of the design information PD1 corresponding to the scanning unit MD1 is DL1, and similarly, the serial data DLn of the design information PD2 to PD6 corresponding to the scanning units MD2 to MD6 is DL2 to DL6. Spots along the drawing lines SLn (SL1 to SL6) by the respective scanning units MDn (MD1 to MD6) by starting driving the drawing optical elements AOMn (AOM1 to AOM6) based on the serial data DLn (DL1 to DL6) Drawing of the light SP is started. That is, during the period in which the drawing optical elements AOMn (AOM1 to AOM6) are driven based on the serial data DLn (DL1 to DL6), the drawing lines SLn (SL1 to SL6) by the scanning units MDn (MD1 to MD6) are driven. The scanning of the spot light SP along and the intensity modulation thereof are performed.

  The number of pixels for one column (the number of pixels of serial data DLn) is determined according to the size of the pixel on the irradiated surface and the length of the drawing line SLn, and the size of one pixel is the size φ of the spot light SP. It depends on. Specifically, the size of one pixel is set to be approximately the same as or larger than the size φ of the spot light SP. When the effective size φ of the spot light SP is 3 μm, the size of one pixel is set to about 3 μm square or more. For example, when the size of one pixel is 3 μm and the spot light SP having a size φ of 3 μm is overlapped by about ½ of the size φ, two spots that emit pulses in the main scanning direction and the sub-scanning direction, respectively. The light SP corresponds to one pixel. Therefore, the number of pixels for one column of the design information PDn (PD1 to PD6) is ½ times the number of spot lights SP (number of pulses) projected along the drawing line SLn. In order to draw a finer pattern, the effective size φ of the spot light SP can be made smaller and the size of one pixel can be set smaller.

  FIG. 5 is a diagram showing the relationship between the pattern exposed in the exposure area W and the design information PDn (PD1 to PD6). In the present embodiment, the pattern exposed in the exposure region W is divided into a plurality of blocks B along the longitudinal direction of the substrate FS. That is, the exposure area (partial area) where the pattern is exposed by each of the plurality of scanning units MDn (MD1 to MD6) is divided into a plurality of blocks B along the longitudinal direction of the substrate FS. Specifically, the pattern (exposure area) is divided into one block Ba, a plurality of blocks Bb, and one block Bc along the longitudinal direction of the substrate FS. The pattern in the block Ba and the block Bc is a block (second block) B corresponding to a pattern that is not used repeatedly, and the pattern in the block Bb is a block (first block) corresponding to a pattern that is used repeatedly. ) B. Then, partial design information (second partial design information) corresponding to the pattern of the block Ba (second pattern) and partial design information (first partial design information) corresponding to the pattern of the block Bb (first pattern) And three pieces of partial design information (third partial design information) corresponding to the pattern of the block Bc (third pattern) are stored in the design information storage unit 36 as design information PDn (PD1 to PD6). ing. In the case of a display or the like in which the electronic device to be manufactured is composed of a plurality of thin film transistors (TFTs) and pixels arranged in a matrix, a part of the pattern exposed to the exposure region W is obtained by repeating the same unit pattern Become. Therefore, the design information PDn only needs to have one partial design information (first partial design information) corresponding to the block Bb with respect to an area (block Bb) where the same unit pattern is repeatedly exposed. The partial design information corresponding to the block Bb is repeatedly used. By doing in this way, the data amount of design information PDn (PD1-PD6) can be suppressed.

  Returning to the description of FIG. 4, the main body frame UB holds a plurality of light introducing optical systems BDUn (BDU1 to BDU6) and a plurality of scanning units MDn (MD1 to MD6). The main body frame UB includes a first frame Ub1 that holds a plurality of light introduction optical systems BDUn (BDU1 to BDU6), and a second frame Ub2 that holds a plurality of scanning units MDn (MD1 to MD6). The first frame Ub1 holds a plurality of light introducing optical systems BDUn (BDU1 to BDU6) above the plurality of scanning units MDn (MD1 to MD6) held by the second frame Ub2 (+ Z direction side). The first frame Ub1 supports the plurality of light introducing optical systems BDUn (BDU1 to BDU6) from the lower side (−Z direction). The odd-numbered light introducing optical systems BDU1, BDU3, and BDU5 are supported by the first frame Ub1 at the positions corresponding to the positions of the odd-numbered scanning units MD1, MD3, and MD5. That is, the odd-numbered light introducing optical systems BDU1, BDU3, and BDU5 are 1 at a predetermined interval along the Y direction on the upstream side (−X direction side) in the transport direction of the substrate FS with respect to the center plane Poc. Arranged in a row. The even-numbered light introducing optical systems BDU2, BDU4, and BDU6 are supported by the first frame Ub1 at the positions corresponding to the positions of the even-numbered scanning units MD2, MD4, and MD6. In other words, the even-numbered light introducing optical systems BDU2, BDU4, and BDU6 are 1 at a predetermined interval along the Y direction on the downstream side (−X direction side) in the transport direction of the substrate FS with respect to the center plane Poc. Arranged in a row.

  The first frame Ub1 is provided with a plurality of openings Hsn (Hs1 to Hs6) corresponding to the plurality of light introducing optical systems BDUn (BDU1 to BDU6). By the plurality of openings Hsn (Hs1 to Hs6), the beams LBn (LB1 to LB6) emitted from the plurality of light introducing optical systems BDUn (BDU1 to BDU6) are not blocked by the first frame Ub1 and corresponding scanning is performed. Incident on the unit MDn (MD1 to MD6). That is, the beams LBn (LB1 to LB6) emitted from the light introducing optical system BDUn (BDU1 to BDU6) enter the corresponding scanning units MDn (MD1 to MD6) through the openings Hsn (Hs1 to Hs6). . The first frame Ub1 may support a plurality of light introducing optical systems BDUn (BDU1 to BDU6) from the upper side (+ Z direction) side or from the side (X direction side) side.

  The second frame Ub2 includes a plurality of scanning units MDn (MD1 to MD6) so that each of the plurality of scanning units MDn (MD1 to MD6) can be slightly rotated (rotated) around the irradiation center axis Len (Le1 to Le6). Is held rotatably. Even when the scanning units MDn (MD1 to MD6) are rotated by rotating the scanning units MDn (MD1 to MD6) around the irradiation center axis Len (Le1 to Le6), the scanning units MDn (MD1) The positional relationship between the beam LBn (LB1 to LB6) incident on MD6) and the optical members in the scanning unit MDn (MD1 to MD6) does not change. That is, the relative positional relationship between the position in the XY plane where the beam LBn enters each scanning unit MDn and the center position in the XY plane of the drawing line SLn corresponding to each scanning unit MDn does not change. Accordingly, even when each scanning unit MDn (MD1 to MD6) rotates, each scanning unit MDn (MD1 to MD6) projects the spot light SP of the beam LBn (LB1 to LB6) onto the substrate FS. The spot light SP can be scanned along the defined drawing lines SLn (SL1 to SL6). By the rotation of each scanning unit MDn (MD1 to MD6), each drawing line SLn (SL1 to SL6) rotates around the irradiation center axis Len (Le1 to Le6) on the irradiated surface of the substrate FS. Thereby, each drawing line SLn (SL1 to SL6) is inclined with respect to the Y axis. The rotation of each scanning unit MDn (MD1 to MD6) around the irradiation center axis Len is performed by an actuator 52 (see FIG. 8) provided in the exposure apparatus EX under the control of the control apparatus 18.

  Even if the irradiation center axis Len of the scanning unit MDn and the axis (rotation center axis) where the scanning unit MDn actually rotates do not completely coincide, they may be coaxial within a predetermined allowable range. The predetermined allowable range includes, for example, the drawing start point (or drawing end point) of the actual drawing line SLn when the scanning unit MDn is rotated by a predetermined angle θsm, the irradiation center axis Len, and the rotation center axis. Assuming that the scanning unit MDn is rotated by a predetermined angle θsm, the amount of difference between the design drawing line SLn and the drawing start point (or drawing end point) of the spot light SP With respect to the main scanning direction, it is set to be within a predetermined distance (for example, the diameter φ of the spot light SP). Further, even if the optical axis of the beam LBn actually incident on the scanning unit MDn does not completely coincide with the rotation center axis of the scanning unit MDn, it may be coaxial within the above-described predetermined allowable range.

  FIG. 6 is a diagram for explaining the configuration of the scanning unit MDn. Since each scanning unit MDn (MD1 to MD6) has the same configuration, the scanning unit MD1 will be described as an example. Moreover, in FIG. 6, it demonstrates using a XtYtZt orthogonal coordinate system. The Zt direction is a direction parallel to the irradiation center axis Le1. The Xt direction is on a plane orthogonal to the Zt direction, the substrate FS is directed from the process apparatus PR1 to the process apparatus PR2 through the exposure apparatus EX, and the Yt direction is on a plane orthogonal to the Zt direction. Therefore, the direction is orthogonal to the Xt direction. That is, the XtYtZt orthogonal coordinate system is a three-dimensional coordinate system obtained by rotating the XYZ orthogonal coordinate system of FIGS. 1 and 4 around the Y axis so that the Z axis is parallel to the irradiation center axis Le1.

  As shown in FIG. 6, in the scanning unit MD1, along the traveling direction of the beam LB1 from the incident position of the beam LB1 to the irradiated surface of the substrate FS, the reflection mirror M10, the beam expander BE, the reflection mirror M11, and the polarization Beam splitter BS, reflection mirror M12, image shift optical member (parallel plate) SR, deflection adjustment optical member (prism) DP, field aperture FA, reflection mirror M13, λ / 4 wavelength plate QW, cylindrical lens CYa, reflection mirror M14, A polygon mirror PM, an fθ lens FT, a reflection mirror M15, and a cylindrical lens CYb are provided. Furthermore, in the scanning unit MD1, an optical lens G10 and a photodetector DT for detecting reflected light from the irradiated surface of the substrate FS or the rotating drum DR via the polarization beam splitter BS are provided.

  The beam LB1 incident on the scanning unit MD1 travels in the −Zt direction, and is incident on the reflection mirror M10 inclined by 45 degrees with respect to the XtYt plane. The beam LB1 incident on the scanning unit MD1 is incident on the reflection mirror M10 so that the optical axis thereof is coaxial with the irradiation center axis Le1. The reflection mirror M10 functions as an incident optical member that receives the beam LB1 and enters the scan unit MD1. The reflection mirror M10 reflects the incident beam LB1 in the −Xt direction along the optical axis AXa set parallel to the Xt axis toward the reflection mirror M11 that is separated from the reflection mirror M10 in the −Xt direction. Therefore, the optical axis AXa is orthogonal to the irradiation center axis Le1 in a plane parallel to the XtZt plane. The beam LB1 reflected by the reflection mirror M10 passes through the beam expander BE arranged along the optical axis AXa and enters the reflection mirror M11. The beam expander BE expands the diameter of the transmitted beam LB1. The beam expander BE includes a condensing lens Be1 and a collimating lens Be2 that collimates the beam LB1 that diverges after being converged by the condensing lens Be1.

  The reflection mirror M11 is disposed with an inclination of 45 degrees with respect to the YtZt plane, and reflects the incident beam LB1 in the -Yt direction toward the polarization beam splitter BS disposed away from the reflection mirror M11 in the -Yt direction. The polarization separation surface of the polarization beam splitter BS is disposed with an inclination of 45 degrees with respect to the YtZt plane. The polarization beam splitter BS reflects a P-polarized beam and transmits a linearly-polarized (S-polarized) beam polarized in a direction orthogonal to the P-polarized light. Since the beam LB1 incident on the scanning unit MD1 is a P-polarized beam, the polarization beam splitter BS reflects the beam LB1 from the reflection mirror M11 in the −Xt direction and guides it to the reflection mirror M12.

  The reflection mirror M12 is disposed with an inclination of 45 degrees with respect to the XtYt plane, and the incident beam LB1 is disposed away from the reflection mirror M12 in the −Zt direction along the optical axis AXc parallel to the Zt axis. Reflects in the -Zt direction toward M13. The beam LB1 reflected by the reflection mirror M12 passes through the image shift optical member SR, the deflection adjustment optical member DP, and the field aperture (field stop) FA arranged along the optical axis AXc, and then enters the reflection mirror M13. Incident. The image shift optical member SR two-dimensionally adjusts the center position in the cross section of the beam LB1 in a plane (XtYt plane) orthogonal to the traveling direction (optical axis AXc) of the beam LB1. The image shift optical member SR is composed of two quartz parallel plates Sr1 and Sr2 arranged along the optical axis AXc. The parallel plate Sr1 can be tilted (rotatable) about the Xt axis. Sr2 is tiltable (rotatable) around the Yt axis. The two parallel flat plates Sr1 and Sr2 are inclined about the Xt axis and the Yt axis, respectively, so that the center position in the cross section of the beam LB1 is minutely two-dimensionally on the XtYt plane orthogonal to the traveling direction of the beam LB1. shift. The parallel plates Sr1 and Sr2 are driven by an actuator (drive unit) (not shown) under the control of the control device 18.

  The deflection adjusting optical member DP finely adjusts the inclination of the beam LB1 reflected by the reflecting mirror M12 and passing through the image shift optical member SR with respect to the optical axis AXc. The deflection adjusting optical member DP is composed of two wedge-shaped prisms Dp1, Dp2 arranged along the optical axis AXc. Each of the prisms Dp1 and Dp2 is independently provided to be rotatable 360 degrees about the optical axis AXc. By adjusting the rotational angle positions of the two prisms Dp1 and Dp2, the axis of the beam LB1 reaching the reflecting mirror M13 is made parallel to the optical axis AXc, or the axis of the beam LB1 reaching the irradiated surface of the substrate FS. Is made parallel to the irradiation center axis Le1. The center position of the beam LB1 after the parallel adjustment by the two prisms Dp1 and Dp2 may be shifted two-dimensionally in a plane parallel to the cross section of the beam LB1, but this shift is an image shift. It can be returned to the original by the optical member SR. The prisms Dp1 and Dp2 are driven by an actuator (drive unit) (not shown) under the control of the control device 18.

  The beam LB1 that has passed through the image shift optical member SR and the deflection adjustment optical member DP passes through the circular aperture of the field aperture FA and reaches the reflection mirror M13. The circular aperture of the field aperture FA is a stop that cuts the skirt portion of the intensity distribution in the cross section of the beam LB1 expanded by the beam expander BE. When the field aperture FA is a variable iris diaphragm that can adjust the aperture of the circular aperture, the intensity (luminance) of the spot light SP can be adjusted.

  The reflection mirror M13 is arranged with an inclination of 45 degrees with respect to the XtYt plane, and reflects the incident beam LB1 in the + Xt direction toward the reflection mirror M14 arranged away from the reflection mirror M13 in the + Xt direction. The beam LB1 reflected by the reflection mirror M13 passes through the λ / 4 wavelength plate QW and the cylindrical lens CYa and then enters the reflection mirror M14. The reflection mirror M14 reflects the incident beam LB1 toward the polygon mirror (scanning deflection member) PM. The polygon mirror PM reflects the incident beam LB1 toward the + Xt direction toward the fθ lens FT disposed away from the polygon mirror PM toward the + Xt direction. The polygon mirror PM deflects (reflects) the incident beam LB1 in a one-dimensional manner in a plane parallel to the XtYt plane in order to scan the spot light SP of the beam LB1 on the irradiated surface of the substrate FS. Specifically, the polygon mirror PM has a rotary polyhedral surface having a rotation axis AXp extending in the Zt direction and a plurality of reflection surfaces RP (eight reflection surfaces RP in the present embodiment) formed around the rotation axis AXp. It is a mirror. By rotating the polygon mirror PM around the rotation axis AXp in a predetermined rotation direction, the reflection angle of the pulsed beam LB1 irradiated on the reflection surface RP can be continuously changed.

  Thereby, the reflection direction (deflection direction) of the beam LB1 is continuously changed by one reflection surface RP, and the spot light SP of the beam LB1 irradiated on the irradiated surface of the substrate FS is mainly changed along the drawing line SL1. It is possible to scan one-dimensionally in the scanning direction (the width direction of the substrate FS, the Y direction). That is, the spot light SP of the pulsed beam LB1 oscillated at the oscillation frequency Fe can be scanned along one drawing line SL1 by one reflecting surface RP. Therefore, the number of scans of the spot light SP along the drawing line SL1 on the irradiated surface of the substrate FS is eight times the same as the number of the reflection surfaces RP by one rotation of the polygon mirror PM. The polygon mirror PM is rotated at a constant speed (number of rotations) by a polygon driving unit RM including a digital motor and the like under the control of the control device 18.

  The cylindrical lens CYa whose generating line is parallel to the Yt direction transmits the incident beam LB1 on the reflection surface RP of the polygon mirror PM in the non-scanning direction (Zt direction) orthogonal to the scanning direction (rotation direction) of the polygon mirror PM. Converge in. Thereby, the beam LB1 converged on the reflection surface RP of the polygon mirror PM has a slit shape in which the Yt direction is the longitudinal direction and the Zt direction is the short direction. Even if the reflection surface RP is inclined with respect to the Zt direction (inclination of the reflection surface RP with respect to the normal of the XtYt plane), the influence is suppressed by the cylindrical lens CYa and the cylindrical lens CYb described later. be able to. For example, the irradiation position (drawing line SL1) of the beam LB1 irradiated on the irradiated surface of the substrate FS can be prevented from shifting in the Xt direction due to a slight tilt error for each reflection surface RP of the polygon mirror PM. .

  The fθ lens FT having the optical axis AXf extending in the Xt-axis direction is a telecentric scan lens that projects the beam LB1 reflected by the polygon mirror PM onto the reflection mirror M15 so as to be parallel to the optical axis AXf on the XtYt plane. It is. The incident angle θ of the beam LB1 to the fθ lens FT (incident angle of the beam LB1 with respect to the optical axis AXf) θ changes according to the rotation angle (θ / 2) of the polygon mirror PM. The fθ lens FT projects the beam LB1 to the image height position on the irradiated surface of the substrate FS in proportion to the incident angle θ through the reflection mirror M15 and the cylindrical lens CYb. When the focal length is fo and the image height position is y, the fθ lens FT is designed to satisfy the relationship (distortion aberration) of y = fo · θ. Therefore, the fθ lens FT enables the beam LB1 to be scanned accurately at a constant speed in the Yt direction (Y direction). When the incident angle θ to the fθ lens FT is 0 degree, the beam LB1 incident on the fθ lens FT travels along the optical axis AXf.

  The reflection mirror M15 reflects the incident beam LB1 in the −Zt direction toward the substrate FS via the cylindrical lens CYb. By the fθ lens FT and the cylindrical lens CYb in which the generatrix is parallel to the Yt direction, the beam LB1 projected on the substrate FS is a minute spot light having a diameter of about several μm (for example, 3 μm) on the irradiated surface of the substrate FS. Converged to SP. Further, the spot light SP projected onto the irradiated surface of the substrate FS is one-dimensionally scanned along the drawing line SL1 extending in the Yt (Y) direction by the rotating polygon mirror PM. The optical axis AXf of the fθ lens FT and the irradiation center axis Le1 are on the same plane, and the plane is parallel to the XtZt plane. Accordingly, the beam LB1 traveling on the optical axis AXf is reflected in the −Zt direction by the reflection mirror M15, and is projected on the substrate FS so as to be coaxial with the irradiation center axis Le1. In the present embodiment, at least the fθ lens FT functions as a projection optical system that projects the beam LB1 deflected by the polygon mirror PM onto the irradiated surface of the substrate FS. Further, at least the reflecting members (reflecting mirrors M11 to M15) and the polarizing beam splitter BS function as an optical path deflecting member that bends the optical path of the beam LB1 from the reflecting mirror M10 to the substrate FS. By this optical path deflecting member, the incident axis of the beam LB1 incident on the reflecting mirror M10 and the irradiation center axis Le1 can be made substantially coaxial. With respect to the XtZt plane, the beam LB1 passing through the scanning unit MD1 travels in the −Zt direction and is projected onto the substrate FS after passing through a substantially U-shaped or U-shaped optical path.

  In this way, with the substrate FS being sub-scanned (conveyed) in the sub-scanning direction (+ X direction), the spot light SP of the beam LBn (LB1 to LB6) is mainly emitted by each scanning unit MDn (MD1 to MD6). By performing one-dimensional main scanning in the scanning direction (Y direction), the spot light SP can be relatively two-dimensionally scanned on the irradiated surface of the substrate FS. Therefore, a predetermined pattern can be drawn and exposed on the exposure region W of the substrate FS. Although the drawing optical elements AOMn (AOM1 to AOM6) are provided in the light introducing optical system BDUn (BDU1 to BDU6), they may be provided in the scanning unit MDn (MD1 to MD6). In this case, a drawing optical element AOMn (AOM1 to AOM6) may be provided between the reflection mirror M10 and the reflection mirror M14 in the scanning unit MDn (MD1 to MD6).

  As an example, the spot light SP is drawn on the drawing line SLn (1) while overlapping the spot light SP having an effective size φ of 3 μm by half, that is, by 1.5 (= 3 × 1/2) μm. When irradiating the surface to be irradiated of the substrate FS along SL1 to SL6), the pulsed spot light SP is irradiated at intervals of 1.5 μm. If the effective length of the drawing lines SLn (SL1 to SL6) is 30 mm, the number of spot lights SP irradiated in one scan is 20000 (= 30 [mm] /1.5 [μm]. ) It becomes a piece. Further, assuming that the feed speed (conveyance speed) Vt of the substrate FS in the sub-scanning direction is 2.419 mm / sec, and the spot light SP is also scanned in the sub-scanning direction at intervals of 1.5 μm. The time difference Tpx between the first scan start (drawing start) time and the next scan start time along the line is about 620 μsec (≈1.5 [μm] /2.419 [mm / sec]). This time difference Tpx is a time required for the polygon mirror PM of the eight reflecting surfaces RP to rotate by an angle β (β = 45 degrees = 360 degrees / 8) for one surface. In this case, since the time for one rotation of the polygon mirror PM needs to be set to be about 4.96 msec (= 8 × 620 [μsec]), the rotation speed Vp of the polygon mirror PM is about 201 per second. .613 rotations (= 1 / 4.96 [msec]), that is, about 12096.8 rpm.

  If the rotation angle range that can actually scan the spot light SP while the polygon mirror PM rotates by an angle β corresponding to one reflecting surface RP is α (α <β), the scanning efficiency corresponding to one reflecting surface RP. Can be expressed as α / β. In the present embodiment, since the polygon mirror PM has a regular octagonal shape having eight reflecting surfaces RP, the angle β is 45 degrees, and the scanning efficiency is represented by α / 45 degrees. The rotation angle range α contributing to this actual scanning is the rotation angle range of the polygon mirror PM in which the beam LB1 reflected by the reflection surface of the polygon mirror PM can be incident on the fθ lens FT and projected toward the substrate FS. is there. In other words, the reflection surface (hereinafter sometimes referred to as a deflection reflection surface) RP of the polygon mirror PM that reflects the beam LB1 irradiated from the reflection mirror M14 toward the fθ lens FT has a rotation angle range (predetermined angle range) α. The beam LB reflected by the deflection reflecting surface RP is incident on the fθ lens FT and projected onto the substrate FS. This rotation angle range α is roughly determined by the focal length, aperture, position, etc. of the fθ lens FT. The larger the rotation angle range α, the longer the maximum scanning length of the drawing line SLn.

  In the present embodiment, since the rotation angle range α that contributes to actual scanning is set to 15 degrees, the scanning efficiency is 1/3 (= 15 degrees / 45 degrees). Therefore, the time Ts required to scan the spot light SP by the maximum scanning length (for example, 31 mm) of the drawing line SLn is Ts = Tpx × scanning efficiency. In the case of the above numerical example, the time Ts, About 206.666... Μsec (= 620 [μsec] / 3). Since the effective scanning length of the drawing lines SLn (SL1 to SL6) in this embodiment is 30 mm, the scanning time Tsp of one scanning of the spot light SP along the drawing line SLn is about 200 μsec (≈206. 666... [Μsec] × 30 [mm] / 31 [mm]). Accordingly, since it is necessary to irradiate 20000 spot light SP (pulse light) during the scanning time Tsp, the emission frequency (oscillation frequency) Fe of the beam LB from the light source device 14 is Fe≈20,000 times / 200 μsec. = 100 MHz. The maximum incident angle at which the beam LB1 reflected by one reflecting surface RP of the polygon mirror PM effectively enters the fθ lens FT is 30 degrees that is twice the rotation angle range α (centered on the optical axis AXf of the fθ lens FT). ± 15 degrees).

  The photodetector DT illustrated in FIG. 6 includes a photoelectric conversion element that photoelectrically converts incident light. A predetermined reference pattern is formed on the surface of the rotating drum DR as disclosed in, for example, International Publication No. 2014/034161 pamphlet. The portion on the rotary drum DR on which the reference pattern is formed is made of a material having a low reflectance (10 to 50%) with respect to the wavelength region of the beam LB1. The other part on the rotating drum DR where the reference pattern is not formed is made of a material having a reflectance of 10% or less or a material that absorbs light with respect to the wavelength region of the beam LB1. Therefore, when the spot light SP of the beam LB1 is irradiated from the scanning unit MD1 to the region where the reference pattern of the rotary drum DR is formed in a state where the substrate FS is not wound (or a state where the substrate FS is passed through the transparent portion), The reflected light is a cylindrical lens CYb, a reflection mirror M15, an fθ lens FT, a polygon mirror PM, a reflection mirror M14, a cylindrical lens CYa, a λ / 4 wavelength plate QW, a reflection mirror M13, a field aperture FA, a deflection adjusting optical member DP, The light passes through the image shift optical member SR and the reflection mirror M12 and enters the polarization beam splitter BS. Here, a λ / 4 wavelength plate QW is provided between the polarizing beam splitter BS and the substrate FS, specifically, between the reflection mirror M13 and the cylindrical lens CYa. As a result, the beam LB1 irradiated to the substrate FS is converted from the P-polarized light to the circularly-polarized beam LB1 by the λ / 4 wavelength plate QW, and the reflected light incident on the polarization beam splitter BS from the substrate FS is converted to the λ / The circularly polarized light is converted to S polarized light by the four-wavelength plate QW. Therefore, the reflected light from the substrate FS passes through the polarization beam splitter BS and enters the photodetector DT via the optical lens G10.

  At this time, in a state where the drawing optical element AOM1 of the light introducing optical system BDU1 is kept on, that is, in a state where the pulsed beam LB1 is continuously incident on the scanning unit MD1, the rotating drum DR is rotated and scanned. When the unit MD1 performs main scanning with the spot light SP, the outer peripheral surface of the rotary drum DR is irradiated with the spot light SP two-dimensionally. Therefore, the image of the reference pattern formed on the rotary drum DR can be acquired by the photodetector DT. Specifically, the control device 18 converts the intensity change of the photoelectric signal output from the photodetector DT into a clock pulse signal for pulse emission of the spot light SP (clock of the oscillation frequency Fe created in the light source device 14). One-dimensional image data in the Yt direction is acquired by digital sampling in response to the pulse signal CK). The control device 18 acquires this one-dimensional image data every time the spot light SP is scanned. Furthermore, under the control of the control device 18, in response to the count value CD2 based on the encoders EN2a and EN2b that measure the rotational angle position of the rotary drum DR in the installation orientation line Lx2 where the drawing line SL1 is arranged, the sub-scanning direction is constant. By obtaining one-dimensional image data in the Yt direction side by side in the Xt direction for each distance (for example, ½ of the size φ of the spot light SP), two-dimensional image information on the surface of the rotating drum DR can be generated. it can. The control device 18 measures the inclination of the drawing line SL1 of the scanning unit MD1 based on the acquired two-dimensional image information of the reference pattern of the rotating drum DR. The inclination of the drawing line SL1 may be a relative inclination between the scanning units MDn (MD1 to MD6), or may be an inclination (absolute inclination) with respect to the central axis AXo of the rotating drum DR. . In addition, it cannot be overemphasized that the inclination of each drawing line SL2-SL6 can also be measured similarly.

  Reference numeral OP1 in FIG. 6 is an origin sensor that generates a pulse origin signal SZ. The origin sensor OP1 generates a pulsed origin signal SZ1 that indicates the timing at which scanning of the spot light SP by each reflection surface RP of the polygon mirror PM can be started. The origin sensor OP1 generates an origin signal SZ1 when the rotational position of the polygon mirror PM reaches a predetermined position where the scanning of the spot light SP by the reflecting surface RP can be started. The origin sensor OP1 generates an origin signal SZ1 using the deflecting reflection surface RP that reflects the beam LB1 irradiated from the reflection mirror M14 toward the fθ lens FT. Therefore, the origin sensor OP1 generates the origin signal SZ1 when the rotation angle position of the deflecting / reflecting surface RP that will perform the scanning of the spot light SP becomes a predetermined rotation angle position in a plane parallel to the XtYt plane. Specifically, the predetermined rotation angle position is the rotation angle position of the deflection reflection surface RP at the timing when the rotation angle position of the deflection reflection surface RP that scans the spot light SP enters the rotation angle range (predetermined angle range) α. That is. Therefore, the origin sensor OP1 generates the origin signal SZ1 at the timing when the deflection reflection surface RP of the rotating polygon mirror PM enters the rotation angle range α. Since the polygon mirror PM has eight reflecting surfaces RP, the origin sensor OP1 outputs the origin signal SZ1 eight times during the period in which the polygon mirror PM rotates once.

  The origin sensor OP1 includes a beam transmission system opa that emits measurement light (laser beam) in a wavelength region that is non-photosensitive to the photosensitive functional layer of the substrate FS to the reflective surface RP that becomes the deflecting reflective surface RP; A beam receiving system opb that receives the reflected light of the measurement light reflected by the reflecting surface RP and generates an origin signal SZ1. Although not shown, the beam transmission system opa includes a light source that emits measurement light and an optical member (such as a reflection mirror or a lens) that projects the measurement light emitted from the light source onto the reflection surface RP. Although not shown, the beam receiving system opb includes a light receiving unit including a photoelectric conversion element that receives reflected light and converts it into an electric signal, and an optical member (such as a reflective mirror or the like) that guides the reflected light reflected by the reflecting surface RP to the light receiving unit. Lens). The beam transmission system opa and the beam light reception system opb measure the beam emission system opa emitted when the rotational position of the polygon mirror PM comes to a predetermined position where the scanning of the spot light SP by the reflecting surface RP can be started. It is provided at a position where the beam light receiving system opb can receive the reflected light.

  The control device 18 controls each scanning unit MDn (MD1 to MD6) based on the origin signal SZn (SZ1 to SZ6) generated by the origin sensor OPn (OP1 to OP6) provided in each scanning unit MDn (MD1 to MD6). The scanning (drawing) start timing of the spot light SP is determined. Specifically, after the predetermined delay time (offset time) Tdn (Td1 to Td6) has elapsed from the timing when the origin sensor OPn (OP1 to OP6) generates the origin signal SZn (SZ1 to SZ6), the control device 18 The driving of the drawing optical elements AOMn (AOM1 to AOM6) based on the serial data DLn (DL1 to DL6) is started. Thereby, the drawing of the spot light SP (scanning of the spot light SP and its intensity modulation) by each scanning unit MDn (MD1 to MD6) is delayed from the generation of the origin signal SZn (SZ1 to SZ6). Will be started later. For example, the control unit 18 starts to drive the drawing optical element AOM1 based on the serial data DL1 after the delay time Td1 has elapsed from the timing at which the origin signal SZ1 is generated, so that the scanning unit MD1 can detect the spot along the drawing line SL1. The drawing of the light SP is started.

  The control device 18 changes the delay time Tdn (Td1 to Td6) from when the origin signal SZn (SZ1 to SZ6) is generated to when the scanning unit MDn (MD1 to MD6) starts drawing the spot light SP. The positions of the drawing lines SLn (SLn1 to SL6) on the substrate FS can be shifted in the main scanning direction (Y direction). For example, when the delay time Tdn (Td1 to Td6) is shortened, the drawing lines SLn (SL1 to SL6) are shifted in the direction opposite to the main scanning direction, and when the delay time Tdn (Td1 to Td6) is lengthened, the drawing lines SLn ( SL1 to SL6) shift to the main scanning direction side. For example, the control device 18 determines the delay time Tdn (Td1 to Td6) so that the center position of the drawing line SLn (SL1 to SL6) having a length of 30 mm is the center position of the maximum scanning length of 31 mm. When shifting the drawing line SLn (SL1 to SL6), the delay time Tdn (Td1 to Td6) is determined according to the shift amount. For example, the control device 18 detects the mark position information of the mark MKm (MK1 to MK4) on the substrate FS detected based on the imaging signal from the alignment microscope ALGm (ALG1 to ALG) and the count value CD1 based on the encoders EN1a and EN1b. Is used to determine whether or not to shift the drawing line SL1 and, if so, the shift amount. For example, when the shape of the exposure area W is deformed (distorted) based on the position of the detected mark MKm (MK1 to MK4), a pattern for drawing exposure according to the shape of the exposure area W is also included. It needs to be deformed. Therefore, the drawing line SL1 is rotated around the irradiation center axis Le1, and the drawing line SL1 is shifted in the main scanning direction.

  FIG. 7 is a configuration diagram showing the configurations of the encoder counters ECN1 to ECN3 and the drawing counters SCN2 and SCN3. As described above, the count values CD1 to CD3 counted by the encoder counters ECN1 to ECN3, and The count values CW2 and CW3 counted by the drawing counters SCN2 and SCN3 are output to the control device 18. The encoder counters ECN1 to ECN3 have the same configuration and function, and the drawing counters SCN2 and SCN3 also have the same configuration and function.

  The encoder counter ECN1 individually counts each detection signal detected by the encoders EN1a and EN1b. Each of the encoders ENja and ENjb includes an origin detection sensor unit (Z phase sensor) that detects the origin mark (origin pattern) ZZ shown in FIG. 2 formed in a part of the circumferential direction of the scale portions SDa and SDb. . In FIG. 2, the origin mark (origin pattern) ZZ is schematically shown on the side surfaces of the scale portions SDa and SDb. It is attached to one place. When the encoders EN1a and EN1b detect the origin mark (origin pattern) ZZ, the encoder counter ECN1 responds to the origin pulse signal (Z-phase signal) Zss from the Z-phase sensor and count values corresponding to the encoders EN1a and EN1b. Is reset to an initial value (eg, 0). The encoder counter ECN1 controls one of the count value based on the detection signal (two-phase signal) of the encoder EN1a and the count value based on the detection signal (two-phase signal) of the encoder EN1b, or an average value of both as the count value CD1. Output to the device 18. Therefore, the encoder counter ECN1 increments the count value CD1 in accordance with the rotation of the rotary drum DR, and the count value CD1 is incremented every rotation of the rotary drum DR (the moment when the origin mark ZZ passes through the encoders EN1a and EN1b). This is a counter circuit that resets to an initial value (for example, 0). This count value CD1 indicates the rotation angle position of the rotary drum DR viewed from the installation direction line Lx1, and indicates the rotation angle position where the rotation angle position of the origin mark ZZ is a predetermined position (for example, 0 degree). In principle, the count value based on the encoder EN1a and the count value based on the encoder EN1b are the same except for the case where the rotary drum DR rotates eccentrically with respect to the central axis AXo due to a manufacturing error of the rotary drum DR. It becomes.

  The encoder counter (first counting unit) ECN2 individually counts each detection signal detected by the encoders EN2a and EN2b. When the encoder EN2a, EN2b detects the origin mark ZZ formed in a part of the circumferential direction of the scale portions SDa, SDb with the Z-phase sensor, the encoder counter ECN2 responds to the Z-phase signal Zss by the encoder EN2a, EN2b. Is reset to an initial value (for example, 0). The encoder counter ECN2 controls one of the count value based on the detection signal (two-phase signal) of the encoder EN2a and the count value based on the detection signal (two-phase signal) of the encoder EN2b, or an average value of both as the count value CD2. Output to the device 18. Therefore, the encoder counter ECN2 is a counter circuit that increments the count value CD2 in accordance with the rotation of the rotary drum DR and resets the count value CD2 to an initial value (for example, 0) every rotation of the rotary drum DR. . The encoder counter ECN2 also outputs the count value CD2 to the drawing counter SCN2. The count value CD2 indicates the rotation angle position of the rotary drum DR as viewed from the installation direction line Lx2, and indicates the rotation angle position where the rotation angle position of the origin mark ZZ is a predetermined position (for example, 0 degree). In principle, the count value based on the encoder EN2a and the count value based on the encoder EN2b are identical to each other except when the rotary drum DR rotates eccentrically with respect to the central axis AXo due to a manufacturing error of the rotary drum DR. It becomes.

  Similarly, the encoder counter (first counting unit) ECN3 individually counts each detection signal detected by the encoders EN3a and EN3b. When the encoders EN3a and EN3b detect the origin marks ZZ of the scale portions SDa and SDb with the Z-phase sensor, the encoder counter ECN3 sets the count values corresponding to the encoders EN3a and EN3b to the initial values (in response to the Z-phase signal Zss). For example, reset to 0). The encoder counter ECN3 controls one of the count value based on the detection signal (two-phase signal) of the encoder EN3a and the count value based on the detection signal (two-phase signal) of the encoder EN3b, or an average value of both as the count value CD3. Output to the device 18. Therefore, the encoder counter ECN3 is a counter circuit that increments the count value CD3 in accordance with the rotation of the rotary drum DR and resets the count value CD3 to an initial value (for example, 0) every rotation of the rotary drum DR. . The encoder counter ECN3 also outputs the count value CD3 to the drawing counter SCN3. The count value CD3 indicates the rotation angle position of the rotary drum DR viewed from the installation direction line Lx3, and indicates the rotation angle position where the rotation angle position of the origin mark ZZ is a predetermined position (for example, 0 degree). In principle, the count value based on the encoder EN3a and the count value based on the encoder EN3b are identical to each other except when the rotary drum DR rotates eccentrically with respect to the center axis AXo due to a manufacturing error of the rotary drum DR. It becomes.

  As described above, each of the encoder counters ECN1 to ECN3 is reset to zero in response to the Z-phase signal Zss. This is a correction map for correcting the eccentricity error of the scale portion SDa (SDb), the pitch error of the scale, and the like. However, it also depends on being created corresponding to one rotation of the scale part SDa (SDb). When the position of the substrate FS in the moving direction is determined with high accuracy and the mechanism unit is controlled so as not to decrease the positioning accuracy during pattern exposure, the count value (moving position, moving amount) corrected by the correction map is used. Therefore, it is preferable to determine various control timings.

  In the present embodiment, it is assumed that the entire circumference of the outer periphery (one turn) of the rotating drum DR is shorter than the length of the exposure region W in the longitudinal direction. Accordingly, the count range (first count range) corresponding to one rotation of the rotary drum DR in the encoder counters ECN1 to ECN3 is smaller than the count range corresponding to the length of the exposure region W in the longitudinal direction. The control device 18 uses the count values CD1 to CD3 of the encoder counters ECN1 to ECN3 to measure the transport speed (rotation speed of the rotating drum DR) Vt of the substrate FS and to control the rotation of the rotating drum DR.

  The drawing counter (second counting unit) SCN2 individually counts the detection signals from the encoders EN2a and EN2b. The drawing counter SCN2 outputs one of the count value based on the detection signal of the encoder EN2a and the count value based on the detection signal of the encoder EN2b, or an average value of both to the control device 18 as the count value CW2. That is, the drawing counter SCN2 increments the count value CW2 in accordance with the rotation of the rotary drum DR. When the preset signal Rs2 is sent from the control device 18, the drawing counter SCN2 rewrites the count value CW2 counted up to that time to the count value CD2 counted by the encoder counter ECN2. That is, the count value CD2 (predetermined value) is preset in the drawing counter SCN2.

  Similarly, the drawing counter (second counting unit) SCN3 individually counts the detection signals detected by the encoders EN3a and EN3b. The drawing counter SCN3 outputs one or both of the count value based on the detection signal from the encoder EN3a and the count value based on the detection signal from the encoder EN3b to the control device 18 as the count value CW3. That is, the drawing counter SCN3 increments the count value CW3 according to the rotation of the rotary drum DR. When the preset signal Rs3 is sent from the control device 18, the drawing counter SCN3 rewrites the count value CW3 counted up to that time to the count value CD3 counted by the encoder counter ECN3. That is, the count value CD3 (predetermined value) is preset in the drawing counter SCN3.

  The count range (second count range) counted by the drawing counters SCN2 and SCN3 is larger than the count range (first count range) counted by the encoder counters ECN2 and ECN3, and the length of the exposure region W in the longitudinal direction. Is set to be larger than the count range (third count range) corresponding to. Specifically, the count range (second count range) counted by the drawing counters SCN2 and SCN3 is at least a scale corresponding to the length of the exposure region W in the longitudinal direction (scales of the scale portions SDa and SDb). ) And the count range (first count range) in which the encoder counters ECN2 and ECN3 count the scale for one round of the scale portions SDa and SDb. . For this reason, the drawing counters SCN2 and SCN3 have count bits set so as to correspond to a sufficiently larger count range than the encoder counters ECN2 and ECN3.

  FIG. 8 is a functional block diagram showing an electrical schematic configuration of the exposure apparatus EX. The control device 18 includes a mark position detection unit 30, an exposure start / end position determination unit 32, an exposure control unit 34, a design information storage unit (storage unit) 36, and a correction data storage unit (storage unit) 38. Even when the substrate FS is transported to the rotating drum DR in a distorted state or when the transport state of the substrate FS is not distorted, the substrate FS is subjected to a heat treatment in the manufacturing process of the device manufacturing system 10, Although the exposure area W may be distorted, in the following description, the exposure area W will be described as not deformed (not distorted) unless otherwise noted. When the exposure area W is not deformed (not distorted), the exposure area W has a rectangular shape as shown in FIGS. In the following description, a case will be described in which drawing data is read and pattern drawing is performed based on the count value CD2 (CD3) of the encoder counter ECN2 (ECN3).

  The mark position detection unit 30 analyzes the image of the imaging signal captured by the plurality of alignment microscopes ALGm (ALG1 to ALG4) and based on the count value CD1 at the moment when the alignment microscope ALGm (ALG1 to ALG4) captures the image. Thus, the mark position information of the marks MK1 to MK4 on the substrate FS (information regarding the arrangement state of the marks MK1 to MK4) is detected with high accuracy. The mark position detection unit 30 outputs the detected mark position information (including the count value CD1) to the exposure start / end position determination unit 32 and the exposure control unit 34.

  Based on the mark position information of the marks MK1 to MK4 detected by the mark position detection unit 30, the exposure start / end position determination unit 32 determines the drawing exposure start position and end position of the exposure region W in the longitudinal direction of the substrate FS. To decide. Specifically, the exposure start / end position determination unit 32 performs drawing exposure of the exposure region W in the longitudinal direction of the substrate FS on the installation orientation line Lx1 based on the mark position information detected by the mark position detection unit 30. Whether or not the start position of the encoder counter ECN1 is reached is determined as the start position SPD. Further, the exposure start / end position determination unit 32 ends the drawing exposure end position of the exposure region W in the longitudinal direction of the substrate FS on the installation orientation line Lx1 based on the mark position information detected by the mark position detection unit 30. Is reached, and if it is determined that it has reached, the count value CD1 of the encoder counter ECN1 at that time is determined as the end position EPD. Note that the lengths of the exposure region W and the gap CLE in the longitudinal direction of the substrate FS are determined in advance.

  When the count value CD2 of the encoder counter ECN2 becomes the same value as the start position SPD, the exposure start / end position determination unit 32 sets the drawing exposure start position of the exposure area W to the installation orientation line Lx2 (drawing lines SL1, SL3, SL5). It is determined that it has reached the upper position, and a start signal SS135 for starting pattern drawing exposure by the scanning units MD1, MD3, and MD5 is output to the exposure control unit. Further, when the count value CD3 of the encoder counter ECN3 becomes the same value as the start position SPD, the exposure start / end position determination unit 32 sets the drawing exposure start position of the exposure area W to the installation orientation line Lx3 (drawing lines SL2, SL4,. SL5) is determined to be positioned above, and a start signal SS246 for starting pattern drawing exposure by the scanning units MD2, MD4, MD6 is output to the exposure control unit 34.

  When the count value CD2 of the encoder counter ECN2 becomes the same value as the end position EPD, the exposure start / end position determination unit 32 determines that the drawing exposure end position of the exposure area W has reached the installation orientation line Lx2, and performs scanning. An end signal ES135 for terminating pattern drawing exposure by the units MD1, MD3, and MD5 is output to the exposure control unit. Further, when the count value CD3 of the encoder counter ECN3 becomes the same value as the end position EPD, the exposure start / end position determination unit 32 determines that the drawing exposure end position of the exposure area W has reached the installation orientation line Lx3. Then, an end signal ES246 for ending the pattern drawing exposure by the scanning units MD2, MD4, and MD6 is output to the exposure control unit 34.

  The exposure control unit (control unit) 34 outputs the preset signals Rs2 and Rs3 to the drawing counters SCN2 and SCN3 after a predetermined time has elapsed after receiving the end signals ES135 and ES246. This fixed time is shorter than the time from when the exposure control unit 34 receives the end signals ES135 and ES246 until it receives the next start signals SS135 and SS246. Specifically, the exposure control unit 34 draws the preset signals Rs2 and Rs3 when the count values CD2 and CD3 of the encoder counters ECN2 and ECN3 are incremented by a predetermined value after receiving the end signals ES135 and ES246. Output to the counters SCN2 and SCN3.

  In this way, the exposure control unit 34 determines that the drawing exposure start position of the next exposure area W is the installation orientation line Lx2 after the drawing exposure end position of the exposure area W passes the installation orientation line Lx2. The preset signal Rs2 can be output until the signal passes above. That is, the preset signal Rs2 is output when the gap CLE between the exposure area W and the exposure area W is on the installation direction line Lx2. Similarly, after the drawing exposure end position of the exposure area W passes the installation direction line Lx3, the exposure control unit 34 until the drawing exposure start position of the next exposure area W passes the installation direction line Lx3. The preset signal Rs3 can be output during That is, the preset signal Rs3 is output when the gap CLE between the exposure area W and the exposure area W is on the installation direction line Lx3.

  FIG. 9 is a time chart showing the relationship between the substrate FS supported and conveyed by the rotating rotary drum DR, the count value CD2, the count value CW2, and the preset signal Rs2. A plurality of exposure regions W are arranged on the substrate FS with a predetermined gap (interval) CLE along the longitudinal direction. In order to distinguish the plurality of exposure areas W, for the sake of convenience, each exposure area W is represented by W1, W2, W3,... From the leftmost exposure area W in FIG. In FIG. 9, it is assumed that the substrate FS is transported from right to left. As described above, the encoder counter ECN2 increments the count value CD2 based on the detection signals of the encoders EN2a and EN2b, and when the origin mark ZZ is detected, the count value CD2 is set to the initial value (zero in FIG. 9). Reset to. Since the length in the longitudinal direction of the exposure region W of the substrate FS is longer than the length of the outer periphery (one turn) of the rotating drum DR, the count value CD2 is 0 during the exposure operation of the exposure region W as shown in FIG. There is a state that is reset. Therefore, as will be described in detail later, if the exposure control unit 34 outputs the serial data DL1, DL3, DL5 of the column corresponding to the count value CD2 to the drawing optical elements AOM1, AOM3, AOM5, it is correct. The serial data DL1, DL3, DL5 cannot be output in order. Alternatively, the drawing data is stored during the exposure operation while adding (or subtracting) a constant value on the software (by the arithmetic processing of the CPU) to the count value CD2 from zero after the encoder counter ECN2 is reset to zero. When the address count value of the memory unit in the design information storage unit 36 is continued, there is a possibility that a delay due to addition (or subtraction) on the software may occur, and the serial data DL1, DL3, DL5 is also correctly stored. Sometimes it cannot be sent. Therefore, the pattern drawn and exposed by the scanning units MD1, MD3, and MD5 is not a desired pattern. That is, the pattern drawn near the encoder counter ECN2 (ECN3) that has been reset to zero is disturbed, or the line width and dimensions of the pattern are disturbed in the sub-scanning direction.

  Therefore, in the present embodiment, the count value CW2 (CW3) of the drawing counter SCN2 (SCN3) provided separately from the encoder counter ECN2 (ECN3) is used as the drawing data access (address of the memory unit in the design information storage unit 36). Used for designation). As described above, the count range that can be counted by the drawing counter SCN2 is a range corresponding to a length that is at least longer than the length of the exposure area W in the longitudinal direction by the outer circumference (one round) of the rotary drum DR. . When the drawing counter SCN2 receives the preset signal Rs2 sent from the exposure control unit 34 at the timing when the gap CLE between the exposure area W and the exposure area W reaches the installation direction line Lx2, the encoder SCN2 The count value CD2 output from the counter ECN2 is preset. Therefore, as shown in FIG. 9, when the gap CLE between the exposure area W1 and the exposure area W2 is provided at the position of the installation direction line Lx2 (drawing lines SL1, SL3, SL5), the preset signal Rs2 is used for drawing. The drawing counter SCN2 reads the count value CD2 (Cn1) of the encoder counter ECN2 at that time and presets it as the count value CW2. Then, the drawing counter SCN2 increments the count value CW2 based on the detection signals (two-phase signals) of the encoders EN2a and EN2b. Thereafter, when the gap CLE between the exposure area W2 and the exposure area W3 reaches the position of the installation orientation line Lx2, the preset signal Rs2 is sent to the drawing counter SCN2, and the drawing counter SCN2 counts the encoder counter ECN2 at that time. The value CD2 (Cn2) is read and preset as the count value CW2.

  As described above, the count value CW2 of the drawing counter SCN2 is not reset when the drawing lines SL1, SL3, and SL5 are located in the exposure area W, and the drawing lines SL1, SL3, and SL5 are moved from the exposure area W. The count value CW2 is reset in a state of being out of place. That is, the drawing counter SCN2 can count the scales SDa and SDb in the entire range of one exposure area W without resetting the count value CW2 in the middle of the exposure area W. Therefore, the exposure control unit 34 uses the count value CW2 of the drawing counter SCN2 to convert the columns of serial data DL1, DL3, DL5 output to the drawing optical elements AOM1, AOM3, AOM5 in the design information storage unit 36. Access can be made without delay from the memory unit in the order of consecutive addresses at fixed addresses, and serial data DL1, DL3, DL5 can be output in the correct order without being missed.

  The relationship between the substrate FS supported and transported by the rotating rotary drum DR, the count value CD3, the count value CW3, and the preset signal Rs3 is the same as that shown in FIG.

  In addition, the exposure control unit (control unit) 34 causes the scanning units MD1, MD3, and MD5 to perform pattern drawing in a period from when the start signal SS135 is received until the end signal ES135 is received. The exposure control unit 34 outputs serial data DL1, DL3, DL5 of each column of design information (drawing data) PD1, PD3, PD5 to the AOM driving circuit 50 that drives the drawing optical elements AOM1, AOM3, AOM5. Thus, the scanning units MD1, MD3, and MD5 are caused to perform pattern drawing. Similarly, the exposure control unit 34 causes the scanning units MD2, MD4, and MD6 to draw a pattern during a period from when the start signal SS246 is received until the end signal ES246 is received. The exposure control unit 34 outputs serial data DL2, DL4, DL6 of each column of design information (drawing data) PD2, PD4, PD6 to the AOM driving circuit 50 that drives the drawing optical elements AOM2, AOM4, AOM6. Thus, the scanning units MD2, MD4, and MD6 are caused to perform pattern drawing.

  Specifically, the exposure control unit 34 selects the columns of serial data DL1, DL3, DL5 to be output from the design information PD1, PD3, PD5 based on the count value CW2 of the drawing counter SCN2. Then, after the delay time Td1 elapses after the origin sensor OP1 generates the origin signal SZ1, the exposure control unit 34 sets the logical information of the pixels of the serial data DL1 in the column selected from the design information storage unit 36 to the pixels in the first row. Are sequentially read out and output to the AOM drive circuit 50. Similarly, the exposure control unit 34 detects the pixels of the serial data DL3 and DL5 in the column selected from the design information storage unit 36 after the elapse of delay times Td3 and Td5 after the origin sensors OP3 and OP5 generate the origin signals SZ3 and SZ5. Are sequentially read from the pixels in the first row and output to the AOM driving circuit 50.

  Similarly, the exposure control unit 34 selects a column of serial data DL2, DL4, DL6 to be output from the design information PD2, PD4, PD6 based on the count value CW3 of the drawing counter SCN3. Then, after the delay time Td2 has elapsed since the origin sensor OP2 generates the origin signal SZ2, the exposure control unit 34 sets the logical information of the pixels of the serial data DL2 in the column selected from the design information storage unit 36 to the pixels in the first row. Are sequentially read out and output to the AOM drive circuit 50. Similarly, the exposure control unit 34 detects the pixels of the serial data DL4 and DL6 in the column selected from the design information storage unit 36 after the delay times Td4 and Td6 have elapsed since the origin sensors OP4 and OP6 generated the origin signals SZ4 and SZ6. Are sequentially read from the pixels in the first row and output to the AOM driving circuit 50. The delay time Tdn (Td1 to Td6) is, in principle, a time set so that the center position of the scanning line SLn (SL1 to SL6) becomes the center position of the maximum scanning length, and is stored in the design information storage unit 36. It is remembered.

  For example, as the column selection of the serial data DLn based on the count values CW2 and CW3 of the exposure control unit 34, for example, the count values CW2 and CW3 when the start signals SS135 and SS246 are received are set as the first column. The count values CW2 and CW3 of each column may be assigned based on the count values CW2 and CW3. Alternatively, the count values CW2 and CW3 of each column may be assigned based on the count values CW2 and CW3 when preset. Of the design information PDn, the partial design information corresponding to the block Bb is repeatedly used as many times as the number of the block Bb. Therefore, the column to be read is selected in consideration of this. That is, as a general rule, as the count values CW2 and CW3 increase, the column of the serial data DLn to be selected is sequentially shifted toward the rear column. However, when the partial design information corresponding to the block Bb is repeatedly used. After the serial data Dn in the last column of the partial design information corresponding to the block Bb is selected and output, the serial data DLn in the first column of the partial design information is selected and output again. By repeating such an operation, the partial design information corresponding to the block Bb is repeatedly used. That is, the exposure control unit 34 selects and uses the partial design information corresponding to the block Ba according to the count values CW2 and CW3, and then selects the partial design information corresponding to the block Bb by the number of blocks Bb. Finally, the partial design information corresponding to the block Bc is selected and used.

  Note that when the substrate FS is irradiated with the spot light SP having a size φ of 3 μm while being overlapped by 1.5 μm in the main scanning direction, the spot light SP is also overlapped by 1.5 μm in the sub-scanning direction (substrate FS transport direction). It is preferable. Therefore, in this case, the count values CW2 and CW3 corresponding to each column are shifted by a count value corresponding to the movement of the rotary drum DR (substrate FS) by 1.5 μm. Further, when spot light SP having a size φ of 3 μm is overlapped by 1.5 μm, and the pixel size is 3 μm, two spot lights SP correspond to one pixel in the main scanning direction. Therefore, the exposure control unit 34 outputs the logical information of the plurality of pixels of the serial data DLn to be output at a cycle interval twice as long as the light emission cycle (1 / oscillation frequency Fe) of the beam LB (spot light SP). Are output sequentially. That is, the exposure control unit 34 outputs the logic information of the pixel in accordance with the clock pulse signal CP obtained by dividing the clock pulse signal CK having the oscillation frequency Fe generated in the light source device 14 by a factor of 1/2.

  The AOM drive circuit 50 turns on / off the drive signal output to the drawing optical element AOM1 according to the logical information of each pixel of the serial data DL1 that is sequentially sent. Similarly, the AOM drive circuit 50 turns on / off the drive signals output to the drawing optical elements AOM2 to AOM6 according to the logical information of the pixels of the serial data DL2 to DL6 that are sequentially sent. Thereby, each scanning unit MDn (MD1 to MD6) can perform drawing (scanning and intensity modulation of the spot light SP) along the drawing lines SLn (SL1 to SL6).

  As described above, the exposure control unit 34 can control the projection position of the spot light SP of the beam LBn in the longitudinal direction of the substrate FS based on the count values CW2 and CW3 of the drawing counters SCN2 and SCN3. Further, the exposure control unit 34 can control the projection position of the spot light SP of the beam LB in the main scanning direction based on the design information PDn.

  The correction data storage unit 38 is used when the exposure area W is deformed. Hereinafter, description will be made assuming that the exposure region W is deformed. The correction data storage unit 38 stores a plurality of correction data for correcting the patterns in the block Ba, the block Bb, and the block Bc in accordance with the assumed deformation of the exposure area W. The correction data includes a plurality of correction data (second correction data) for correcting patterns in the first-used block Ba and the last-used block Bc that are not repeatedly used, and a pattern in the block Bb that is repeatedly used. And a plurality of correction data to be corrected (first correction data). This correction data is preferably provided for each scanning unit MDn (MD1 to MD6), but is not limited thereto. The correction data includes at least correction design information RPDn (RPD1 to RPD6) and adjustment information PAn (PA1 to PA6). The correction data storage unit 38 includes at least a correction design information storage unit 38a that stores correction design information RPDn, and an adjustment information storage unit 38b that stores adjustment information PAn.

  The correction design information storage unit 38a stores correction design information RPDn (RPD1 to RPD6) for each scanning unit MDn (MD1 to MD6). The correction design information storage unit 38a applies the pattern in the block (second block) Ba, the block (first block) Bb, and the block (second block) Bc in accordance with the assumed deformation of the exposure area W. A plurality of corrected design information RPDn obtained by correcting partial design information which is corresponding design information is stored. Specifically, the correction design information storage unit 38a stores a plurality of correction design information RPDn corresponding to deformations of the block Ba, the block Bb, and the block Bc that are assumed in advance. 10A is a diagram illustrating an example of the shape type of the deformed block Ba, FIG. 10B is a diagram illustrating an example of the shape type of the deformed block Bb, and FIG. 10C is a shape of the deformed block Bc. It is a figure which shows an example of the kind of. The correction design information storage unit 38a stores a plurality of correction design information RPDn corresponding to the deformation of the block Ba, the block Bb, and the block Bc as shown in FIGS. 10A to 10C. The correction design information RPDn is composed of a plurality of columns of serial data DLn.

  The adjustment information storage unit 38b stores adjustment information PAn (PA1 to PA6) for each scanning unit MDn (MD1 to MD6). The adjustment information storage unit 38b determines the projection position of the spot light SP of the beam LBn based on the correction design information RPDn corresponding to the patterns in the block Ba, the block Bb, and the block Bc in accordance with the assumed deformation of the exposure region W. A plurality of adjustment information PAn to be adjusted are stored. Specifically, the adjustment information storage unit 38b stores a plurality of pieces of adjustment information PAn corresponding to the deformation of the block Ba, the block Bb, and the block Bc as illustrated in FIGS. 10A to 10C. The adjustment information PAn is information indicating a delay time Tdn ′ (Td1 ′ to Td6 ′) corresponding to the shift amount of the drawing line SLn and a rotation amount (rotation angle) for rotating the drawing line SLn around the irradiation center axis Len ( Rotation amount information). The adjustment information PAn stores the delay time Tdn ′ and rotation amount information in each drawing line SLn on which the spot light SP of the beam LBn is drawn by the serial data DLn in each column. The adjustment information PAn may also include magnification information that defines the magnification of the drawing line SLn.

  When the exposure control unit 34 determines that the shape of the block B to be exposed is deformed (distorted) based on the mark position information on the substrate FS detected by the mark position detection unit 30, the mark position Based on the information, correction design information RPDn (RPD1 to RPD6) and adjustment information PAn (PA1 to PA6) corresponding to the deformation of the block B are selected. At this time, the exposure control unit 34 selects the corrected design information RPDn corresponding to the block B having a shape that can be stitched together with the shape of the previous block B that has already been exposed. That is, the shape (deformation form) of the joint between the previous block (first block) B that has already been exposed and the block (second block) B that is newly exposed adjacent to the previous block B ) Are selected, the correction design information RPDn and the adjustment information PAn are similar. For example, when the previous block B that has already been exposed is the block Ba1 (see FIG. 10A), the correction design information RPDn corresponding to the block Bb1 (see FIG. 10B) whose shape (deformation) of the joint portion is similar to the block Ba1 and The adjustment information PAn (PA1 to PA6) is selected. If the previous block B that has already been exposed is the block Bb4 (see FIG. 10B) and the next block to be exposed is the block Bc, the shape (deformation) of the joint portion is similar to the block Bb4. The correction design information RPDn and adjustment information PAn (PA1 to PA6) corresponding to Bc3 (see FIG. 10C) are selected.

  The exposure control unit 34 converts the serial data DLn (DL1 to DL6) of each column of the selected correction design information RPDn (RPD1 to RPD6) into the delay time Tdn ′ (Td1 ′) of the selected adjustment information PAn (PA1 to PA6). ˜Td6 ′) to output to the AOM driving circuit 50. Specifically, the exposure control unit 34 selects and selects the column of serial data DLn to be output from the selected correction design information RPDn based on the count values CW2 and CW3 of the drawing counters SCN2 and SCN3. From the adjustment information PAn, the delay time Tdn ′ corresponding to the column of serial data DLn to be output is selected. Then, the exposure control unit 34 outputs the serial data DLn of the selected column after the selected delay time Tdn ′ has elapsed since the origin sensor OPn generated the origin signal SZn (SZ1 to SZ6). Further, in parallel with the output operation of the serial data DLn, the exposure control unit 34 selects rotation amount information corresponding to the column of the serial data DLn to be output from the selected adjustment information PAn. The exposure control unit 34 drives and controls the actuator 52 based on the selected rotation amount information. Accordingly, the actuator 52 rotates the drawing line SLn (scanning unit MDn) around the irradiation center axis Len with a rotation amount (rotation angle) according to the rotation amount information. By adjusting the output timing of the serial data DLn based on the delay time Tdn ′ included in the adjustment information PAn and rotating the drawing line SLn based on the rotation amount information included in the adjustment information PAn, the beam LBn based on the correction design information RPDn. The projection position of the spot light SP is adjusted. Thus, the pattern exposed to the block B can be corrected according to the shape of the deformed block B.

Even if the exposure control unit 34 temporarily stops the transport of the substrate FS and interrupts the drawing exposure due to a trouble in the entire device manufacturing system 10 or a trouble in the exposure apparatus EX, the exposure control unit 34 When the pattern is being exposed, the drawing and exposure of the substrate FS are interrupted after the drawing exposure of the pattern of the currently exposed block B is completed. Thereafter, when the exposure is resumed, the control device 18 images the mark MKm on the alignment microscope ALGm by transporting the substrate FS in the reverse direction (−X direction) and then again in the forward direction (+ X direction). Let Then, based on the captured image and the count value CD1 of the encoder counter ECN1 at that time, the mark position detection unit 30 detects the mark position information. Based on the detected mark position information, the exposure control unit 34 specifies the end position of the block B where the drawing exposure was last performed, and starts the pattern of the next block B again from the specified position.
As described above, when the pattern exposed in the exposure area W is exposed in units of the block B, when it becomes necessary to stop the apparatus due to some trouble and to interrupt the exposure, the pattern of the block B being exposed is The exposure can be interrupted when the exposure is completed. Therefore, when the apparatus is restarted and the exposure operation is restarted, the next block B pattern may be exposed so as to be continuous with the already exposed block B pattern.

  When the adjustment information PAn also includes magnification information, the exposure control unit 34 may change the light emission frequency Fe of the beam LB emitted from the light source device 14 according to the drawing magnification. That is, if the drawing line SLn is to be reduced, the light emission frequency Fe is increased, and if the drawing line SLn is to be extended, the light emission frequency Fe is decreased. Further, the exposure control unit 34 sets the light emission interval of the beam LB (spot light SP) to be constant in principle, discretely sets a plurality of change points on the drawing line SLn according to the magnification information, and the spot light SP is changed. Only when passing the point, the light emission interval of the beam LB (spot light SP) may be changed. That is, when the drawing line SLn is reduced, the light emission interval of the beam LB is shortened only when passing through the change point, and when the drawing line SLn is desired to be extended, the light emission interval of the beam LB only when passing through the change point. Should be lengthened.

  Although the pattern exposed in the block B is corrected using the correction design information RPDn and the adjustment information PAn, the pattern may be corrected using either one of them. For example, when only the adjustment information PAn is used, the projection position of the spot light SP of the beam LBn based on the design information PDn is adjusted by the adjustment information PAn, and the pattern exposed in the block B is corrected. Conversely, when only the corrected design information RPDn is used, the pattern exposed in the block B is corrected by projecting the spot light SP of the beam LBn to the projection position based on the corrected design information RPDn. Even when only the correction design information RPDn is used, the exposure control unit 34 calculates adjustment information for adjusting the projection position based on the correction design information RPDn based on the mark position information of the detected mark MKm, and calculates the calculated adjustment. The projection position may be adjusted using the information. Also in this case, the adjustment information to be calculated includes rotation amount information for rotating the drawing line SLn, delay time Tdn from the generation timing of the origin signal SZn until the serial data DLn is output, magnification information, and the like.

  Further, the exposure control unit 34 uses the correction design information RPDn and the adjustment information PAn, or only uses the adjustment information PAn, based on the detected mark position information of the mark MKm. May be adjusted, and the projection position based on the design information PDn or the corrected design information RPDn may be adjusted using the corrected adjustment information PAn.

  As described above, the exposure control unit 34 sets the encoder counters ECN2 and ECN3 before the processing unit (the drawing optical element AOMn and the scanning unit MDn) starts processing on one exposure region W on the substrate FS. The count values CD2 and CD3 are preset in the drawing counters SCN2 and SCN3, and the processing by the processing unit is controlled based on the preset count values CW2 and CW3 of the drawing counters SCN2 and SCN3. As a result, the drawing counters SCN2 and SCN3 count the scale over the entire range of one exposure area W without resetting or presetting the count values CD2 and CD3 during the processing of the exposure unit W by the processing unit. Is possible. As a result, the processing unit can appropriately perform processing for forming the electronic device.

  The processing unit projects a beam LBn (spot light SP) to form an electronic device pattern on the exposure region W of the substrate FS, and the exposure control unit 34 counts the count values CW2 of the drawing counters SCN2 and SCN3, Based on CW3, the projection position of the beam LBn (spot light SP) in the longitudinal direction of the substrate FS is controlled. Thereby, a desired pattern can be appropriately exposed.

  The exposure apparatus EX is composed of logical information in units of a plurality of pixels that are two-dimensionally decomposed in a matrix with the main scanning direction of the beam LBn (spot light SP) as the row direction and the moving direction of the substrate FS as the column. A design information storage unit 36 for storing pattern design information. The processing unit includes a scanning unit MDn that repeatedly scans the beam LBn (spot light SP) in one dimension along the width direction of the substrate FS, a drawing optical element AOMn that modulates the intensity of the spot light SP based on design information, and Have The exposure control unit 34 selects a column of design information PDn (RPDn) corresponding to the count values CW2 and CW3 of the drawing counters SCN2 and SCN3, and is stored for each of a plurality of pixels included in the selected column. The design information storage unit 36 is controlled so that the logical information is sent to the drawing optical element AOMn. Thereby, a desired pattern can be appropriately drawn and exposed.

  The second counting range is set to be equal to or more than the sum of at least the third counting range counted by the moving amount of the scale corresponding to the length in the longitudinal direction of one exposure region W and the first counting range. Has been. As a result, the drawing counters SCN2 and SCN3 do not reset or preset the count values CW2 and CW3 during the processing of the exposure area W by the processing unit (during the exposure operation). The scale can be counted up reliably. As a result, the processing unit can reliably perform processing for appropriately forming the electronic device.

  When the exposure apparatus EX divides a pattern for an electronic device to be formed in the exposure area W into a plurality of blocks B in the longitudinal direction, the exposure apparatus EX performs block B according to a plurality of variations of the exposure area W assumed in advance. A correction data storage unit 38 for storing a plurality of correction data for deforming a pattern exposed inside, and a mark detection unit for detecting information on the arrangement state of the plurality of marks MKm formed on the substrate FS ( An alignment microscope ALGm, encoders EN1a, EN1b, and a mark position detector 30). When the processing unit exposes the pattern for the electronic device onto the substrate FS, the exposure control unit 34 is based on information regarding the arrangement state from among a plurality of correction data stored in the correction data storage unit 38 for each block B. The correction data is selected, and the processing unit is controlled so that the pattern exposed in the block B is deformed using the selected correction data. Thereby, even if the exposure area W is deformed, the pattern to be exposed can be corrected with high accuracy.

  The correction data includes adjustment information PAn for adjusting the projection position of the beam LBn (spot light SP) based on the design information corresponding to the pattern in the block B, in accordance with the anticipated deformation form of the exposure region W. The exposure control unit 34 adjusts the projection position based on the design information PDn corresponding to the pattern in the block B using the adjustment information PAn and projects the beam LBn (spot light SP), thereby exposing the block B. Transform the pattern to be done. Thereby, the projection position of the beam LBn (spot light SP) can be finely adjusted, and even when the exposure region W is deformed, the pattern to be exposed can be corrected with high accuracy.

  The correction data includes correction design information RPDn obtained by correcting the design information PDn corresponding to the pattern in the block B in accordance with the deformation mode of the exposure region W expected in advance. The exposure control unit 34 deforms the pattern exposed in the block B by projecting the beam LBn (spot light SP) to the projection position based on the correction design information RPDn. Thus, since the correction design information RPDn corresponding to the deformation of the exposure area W is used, even if the exposure area W is deformed, the pattern to be exposed can be accurately corrected in accordance with the deformation.

  The correction data includes correction design information RPDn obtained by correcting the design information PDn corresponding to the pattern in the block B and a beam LBn (spot light SP based on the correction design information RPDn) in accordance with a predicted form of the exposure area W. ) Includes adjustment information PAn for adjusting the projection position. The exposure control unit 34 adjusts the projection position based on the correction design information RPDn using the adjustment information PAn and projects the beam LBn (spot light SP), thereby deforming the pattern exposed in the block B. Thereby, even if the exposure area W is deformed, the pattern to be exposed can be corrected with high accuracy.

  The exposure control unit 34 adjusts the projection position based on the corrected design information RPDn using the information related to the arrangement state, or the adjustment information PAn and the information related to the arrangement state, and projects the beam LBn (spot light), thereby blocking The pattern exposed in B is deformed. Thereby, even if the exposure area W is deformed, the pattern to be exposed can be corrected with high accuracy.

  When performing exposure on the second block B adjacent to the already exposed first block B in the moving direction of the substrate FS, the exposure control unit 34 selects the first correction data from the plurality of correction data. Correction data having a similar deformation form at the joint between the block B and the second block B is selected. Therefore, even if exposure is performed in units of blocks B, the blocks B can be connected to each other, and even if the exposure region W is deformed, the pattern to be exposed can be corrected with high accuracy.

  The plurality of blocks B include a plurality of first blocks B that are repeatedly used and a second block B that is not repeatedly used, and the design information PDn is used to expose the first pattern on the first block B. The first partial design information, and second partial design information for exposing the second block B to the second pattern. Thereby, the data amount of the design information PDn can be suppressed. The plurality of correction data includes a plurality of first correction data for deforming the first pattern in the first block B and a second block B according to a plurality of deformation forms of the exposure area W assumed in advance. And a plurality of second correction data for deforming the second pattern. Thereby, the pattern to be exposed for each block B can be corrected.

  In the embodiment described above, the length of the exposure region W of the substrate FS in the longitudinal direction is longer than the length of the outer periphery (one turn) of the rotary drum DR, but the length of the exposure region W is rotated. It may be shorter than the length of the outer periphery of the drum DR. FIG. 11 is a time chart showing the relationship between the substrate FS, the count value CD2, the count value CW2, and the preset signal Rs2 when the length of the exposure area W in the longitudinal direction is shorter than the outer periphery of the rotary drum DR. is there. In the example of FIG. 11, it is assumed that two exposure regions W are arranged in the width direction of the substrate FS, and the substrate FS is transported from right to left. In addition, the length of the outer periphery (one turn) of the rotary drum DR is longer than the length of one exposure region W in the longitudinal direction, and the length between the two exposure regions W in the longitudinal direction and the two exposure regions W. It is assumed that the length is shorter than the sum of the lengths of the gaps CLE in the longitudinal direction.

  As described above, the encoder counter ECN2 increments the count value CD2 based on the detection signals of the encoders EN2a and EN2b. When the origin mark ZZ is detected, the count value CD2 is set to the initial value (zero in FIG. 11). Reset. Since the length of the exposure area W of the substrate FS in the longitudinal direction is shorter than the length of the outer periphery (one round) of the rotary drum DR, the encoder counter ECN2 has a length of at least one exposure area W as shown in FIG. Although the scale corresponding to the length in the direction can be counted, a situation occurs in which the count value CD2 is reset to zero in the middle of the exposure area W. The count range of the drawing counter SCN2 is a range corresponding to a length that is at least longer than the length of the exposure region W in the longitudinal direction by the outer periphery (one turn) of the rotary drum DR. Therefore, the drawing counter SCN2 can count the scales of the scale portions SDa and SDb over at least the first exposure area W and the second exposure area W. The relationship between the substrate FS, the count value CD3, the count value CW3, and the preset signal Rs3 is the same as that shown in FIG.

  Therefore, the exposure control unit 34 outputs the preset signal Rs2 to the drawing counter SCN2 every time two exposure regions W continuous along the longitudinal direction pass through the position on the installation direction line Lx2. That is, the exposure control unit 34 outputs the preset signal Rs2 every time the end signal ES135 is received twice. Similarly, the exposure control unit 34 outputs a preset signal Rs3 to the drawing counter SCN3 every time two continuous exposure regions W along the longitudinal direction pass the installation orientation line Lx3. That is, the exposure control unit 34 outputs the preset signal Rs3 every time the end signal ES246 is received twice. The output timings of the preset signals Rs2 and Rs3 are after a predetermined time has elapsed since the end signals ES135 and ES246 are received as described above.

  In short, the exposure control unit 34 sets the gap CLE so that the drawing counters SCN2 and SCN3 are not reset (or preset) in a state where the exposure region W is located on the installation direction lines Lx2 and Lx3. The preset signals Rs2 and Rs3 may be output to the drawing counters SCN2 and SCN3 at timings on the azimuth lines Lx2 and Lx3.

  In the above embodiment, the raster scan method is used, but the present invention is not limited to the raster scan method. The point is that it can be any pattern that can correct the pattern to be exposed in accordance with the deformation of the exposure area W, and may be an exposure apparatus Ex that uses a mask. For example, instead of the exposure head 16 (scanning units MD1 to MD6) shown in FIG. 1, a cylindrical mask DM that rotates in synchronization with the rotation of the rotating drum DR as disclosed in JP-A-2015-145971, You may employ | adopt the projection optical system PL (PL1-PL6) of the multi lens system whose projection magnification is equal magnification (x1) for the image of the pattern formed in the cylindrical mask DM.

[Modification]
The above embodiment may be modified as follows.

  (Modification 1) In the above embodiment, the drawing counters SCN2 and SCN3 respond to the preset signals Rs2 and Rs3, and the count values CW2 and CW3 at that time are counted as the count values CD2 and ECN3 of the encoder counters ECN2 and ECN3, respectively. Although it is preset (updated) to CD3, in response to the preset signals Rs2 and Rs3, the count values CW2 and CW3 at that time are preset to a predetermined value (for example, a constant value of zero), and drawing on the exposure area W is performed. From the point of time when the encoders EN2 and EN3 are started, the scales SDa and SDb may be moved according to the detection signals (two-phase signals) of the encoders EN2 and EN3. That is, for example, in the time chart shown in FIG. 9, when the position of each gap CLE on the substrate FS (or the drawing start position of each exposure area Wn) coincides with the position of the installation orientation line Lx2 or the installation orientation line Lx3 Therefore, the count values CW2 and CW3 of the drawing counters SCN2 and SCN3 may be incremented from a predetermined value (for example, a constant value of zero).

  (Modification 2) Based on the detection signals (two-phase signals) of the encoders EN1 to EN3, the encoder counters ECN1 to ECN3 that count the scales SDa and SDb move the scales SDa (SDb). Since the count value includes an eccentricity error and a scale pitch error, the count value is actually corrected by a correction map. FIG. 12 is a circuit block diagram showing a configuration in which a correction function using a correction map is incorporated in the configuration of each counter for encoder EN2 shown in FIG. As shown in FIG. 12, the count value CD2 generated by the encoder counter ECN2 is corrected by the correction map circuit CMP and output to the control device 18 as the count value CD2 '. Then, the corrected count value CD2 'is applied as a preset value to the drawing counter SCN2. Accordingly, the drawing counter SCN2 is preset with the count value CD2 ′ at that time in response to the preset signal Rs2 from the control device 18, and the drawing counter SCN2 increments the preset count value as an initial value. To start. In FIG. 7, the drawing counter SCN2 also digitally counts the amount of scale movement based on the detection signal (two-phase signal) from the encoder EN2. However, as shown in FIG. 12, the drawing counter SCN2 May be configured to increment the change (“0”, “1”) of the least significant bit LSB of the count value CD2 ′ output from the correction map circuit CMP. In this way, the count value CW2 counted by the drawing counter SCN2 is obtained by removing the eccentricity error of the scale portion SDa (SDb), the pitch error of the scale, etc., and accurately reflects the movement position of the substrate FS. It becomes.

DESCRIPTION OF SYMBOLS 10 ... Device manufacturing system 12 ... Board | substrate conveyance mechanism 14 ... Light source device 16 ... Exposure head 18 ... Control apparatus 30 ... Mark position detection part 32 ... Exposure start / end position determination part 34 ... Exposure control part 36 ... Design information storage part 38 ... Correction data storage unit 38a ... Correction design information storage unit 38b ... Adjustment information storage unit 50 ... AOM drive circuit 52 ... Actuator ALGm (ALG1-ALG4) ... Alignment microscope AOMn (AOM1-AOM6) ... Drawing optical element AXo ... Center axis AXp ... Rotating axis BDUn (BDU1 to BDU6) ... Light introducing optical system CYa, CYb ... Cylindrical lens DR ... Rotating drum ECN (ECN1-ECN3) ... Encoder counter ENja (EN1a-EN3a), ENjb (EN1b-EN3b) ... Encoder EX ... Exposure device FS ... Substrate FT ... f θ lens LB, LBn (LB1 to LB6) ... beam Len (Le1 to Le6) ... irradiation center axis Lx1 to Lx3 ... installation azimuth line MDn (MD1 to MD6) ... scanning unit MKm (MK1 to MK4) ... mark OPn (OP1 to OP1) OP6) ... Origin sensor PM ... Polygon mirror RP ... Reflection surface SCN (SCN2, SCN3) ... Drawing counter SDa, SDb ... Scale part SLn (SL1-SL6) ... Drawing line SP ... Spot light SZn (SZ1-SZ6) ... Origin Signal UB ... Body frame W ... Exposure area

Claims (14)

A device forming apparatus for forming a plurality of electronic devices along a long direction on a long sheet substrate having flexibility,
A rotating drum that includes a cylindrical outer peripheral surface of a predetermined radius, and moves the sheet substrate in the longitudinal direction by rotating a part of the sheet substrate supported by the outer peripheral surface;
A processing unit for performing a process for forming the electronic device on a partial region of the sheet substrate supported by the outer peripheral surface of the rotating drum;
The head unit that reads the scale formed on the scale unit that rotates together with the rotating drum, and the amount of movement of the read scale are counted, and the value counted for each rotation of the rotating drum is reset to the initial value. A rotation measuring system having a first counting unit;
A second counting unit that counts the amount of movement of the scale in a second counting range that is larger than the first counting range counted by the first counting unit corresponding to one rotation of the rotating drum;
Before the processing unit starts processing the partial area of the sheet substrate, the second counting unit is preset with a predetermined value, and based on the preset count value of the second counting unit. A control unit for controlling processing by the processing unit;
A device forming apparatus. The device forming apparatus according to claim 1,
The processing unit projects an energy beam on the partial region of the sheet substrate to form a pattern for the electronic device,
The said control unit is a device formation apparatus which controls the projection position of the said energy beam in the said elongate direction of the said sheet | seat board | substrate based on the count value of the said 2nd counting part. The device forming apparatus according to claim 2,
The energy beam scanning direction is a row direction, the sheet substrate moving direction is a column, and a storage unit that stores design information of the pattern in units of a plurality of pixels that are two-dimensionally decomposed in a matrix form,
The processing unit includes a beam scanning unit that repeatedly scans the energy beam in one dimension along the width direction of the sheet substrate, and an intensity modulation unit that modulates the intensity of the energy beam based on the design information. And
The control unit selects a column of the design information stored in the storage unit according to a count value of the second counter unit, and stores the design information corresponding to each of a plurality of pixels included in the selected column. A device forming apparatus that controls the storage unit so that the logical information is sent to the intensity modulation unit. The device forming apparatus according to any one of claims 1 to 3,
The second counting range is equal to or greater than the sum of the third counting range counted by the moving amount of the scale corresponding to the length in the longitudinal direction of one electronic device and the first counting range. A device forming apparatus set to The device forming apparatus according to any one of claims 1 to 4,
The device forming apparatus, wherein the control unit controls the rotating drum or detects the position of the sheet substrate conveyed by the rotating drum based on a count value of the first counting unit. A pattern forming apparatus for forming a plurality of patterns for electronic devices along a longitudinal direction on a long sheet substrate having flexibility,
A rotating drum that includes a cylindrical outer peripheral surface of a predetermined radius, and moves the sheet substrate in the longitudinal direction by rotating a part of the sheet substrate supported by the outer peripheral surface;
In order to form the electronic device pattern on a partial region of the sheet substrate supported by the outer peripheral surface of the rotating drum, an energy beam is projected based on design information for exposing the electronic device pattern. A processing unit;
When the pattern for the electronic device to be formed in the partial area is divided into a plurality of blocks in the longitudinal direction, the pattern is exposed in the block according to a plurality of variations of the partial area assumed in advance. A correction data storage unit for storing a plurality of correction data for deforming the pattern;
A mark detection unit for detecting information related to an arrangement state of a plurality of marks formed on the sheet substrate;
When exposing the electronic device pattern to the sheet substrate, the correction data is selected from the plurality of correction data stored in the correction data storage unit for each block based on information on the arrangement state. A control unit for controlling the processing unit so that the pattern exposed in the block is deformed using the selected correction data;
A pattern forming apparatus. It is a pattern formation apparatus of Claim 6, Comprising:
The correction data includes adjustment information for adjusting a projection position of the energy beam based on the design information corresponding to the pattern in the block according to a deformation form of the partial region predicted in advance.
The control unit adjusts the projection position based on the design information corresponding to the pattern in the block using the adjustment information and projects the energy beam, thereby exposing the block. A pattern forming apparatus for deforming a pattern. It is a pattern formation apparatus of Claim 6, Comprising:
The correction data includes correction design information in which the design information corresponding to the pattern in the block is corrected according to a deformation mode of the partial region expected in advance.
The said control unit is a pattern formation apparatus which deform | transforms the said pattern exposed in the said block by projecting the said energy beam to the said projection position based on the said correction | amendment design information. It is a pattern formation apparatus of Claim 6, Comprising:
The correction data includes correction design information obtained by correcting the design information corresponding to the pattern in the block in accordance with a predicted form of the partial region, and projection of the energy beam based on the correction design information. Adjustment information for adjusting the position,
The control unit adjusts the projection position based on the correction design information using the adjustment information and projects the energy beam, thereby deforming the pattern exposed in the block. . The pattern forming apparatus according to claim 8, wherein:
The control unit projects the energy beam by adjusting the projection position based on the correction design information using the information on the arrangement state or the adjustment information and the information on the arrangement state and projecting the energy beam. A pattern forming apparatus for deforming the pattern exposed inside. It is a pattern formation apparatus of any one of Claims 6-10, Comprising:
The control unit, when performing exposure on the second block adjacent to the first block that has already been exposed in the moving direction of the sheet substrate, out of the plurality of correction data. A pattern forming apparatus that selects the correction data having a similar deformation form at a joint portion between one block and the second block. It is a pattern formation apparatus of any one of Claims 6-11, Comprising:
The plurality of blocks include a plurality of first blocks corresponding to a first pattern that is used repeatedly, and a second block corresponding to a second pattern that is not used repeatedly,
The design information includes first partial design information for exposing the first pattern to the first block and second partial design information for exposing the second pattern to the second block. And
The plurality of correction data includes a plurality of first correction data for deforming the first pattern in the first block according to a plurality of deformation forms of the partial region assumed in advance, and the second correction data. A pattern forming apparatus comprising a plurality of second correction data for deforming the second pattern in the block. A device forming method for forming a plurality of electronic devices along a long direction on a long sheet substrate having flexibility,
Moving the sheet substrate in the longitudinal direction by rotation of a rotating drum having a cylindrical outer peripheral surface with a predetermined radius and supporting a part of the sheet substrate on the outer peripheral surface;
Subjecting a partial region of the sheet substrate supported by the outer peripheral surface of the rotating drum to a process for forming the electronic device by a processing apparatus;
The moving amount of the scale formed on the scale unit that rotates together with the rotating drum is counted as a first counted value by the first counting unit, and the counted value of the first counting unit for each rotation of the rotating drum. Resetting to the initial value,
A second counting unit having a second counting range larger than the first counting range counted by the first counting unit corresponding to one rotation of the rotating drum is used to set the second moving amount of the scale. Counting as a count value;
Each time the second counting unit counts according to the length of the partial area on the sheet substrate, the second counting unit is preset to a predetermined value and the preset second Controlling the processing based on the count value of the two counting unit;
A device forming method. A pattern forming method for forming a plurality of patterns for electronic devices along a longitudinal direction on a long sheet substrate having flexibility,
Moving the sheet substrate in the longitudinal direction;
Projecting an energy beam based on design information for forming the electronic device pattern on the partial region of the sheet substrate to the partial region of the sheet substrate;
When the electronic device pattern to be formed on the sheet substrate is divided into a plurality of blocks in the longitudinal direction, exposure is performed in the blocks in accordance with a plurality of deformation modes of the partial region assumed in advance. Storing a plurality of correction data for deforming the pattern in the storage unit;
Detecting information relating to an arrangement state of a plurality of marks formed on the sheet substrate;
When exposing the electronic device pattern to the sheet substrate, for each block, from among the plurality of correction data stored in the storage unit, select the correction data based on information on the arrangement state, Correcting so that the pattern exposed in the block is deformed using the selected correction data;
A pattern forming method.

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