JP2017092695A - Control circuit of semiconductor relay module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a control circuit for controlling a semiconductor relay module which can reliably drive a semiconductor relay and can downsize the entire circuit.SOLUTION: According to a control circuit 200, a drive bias signal supply unit 210 boosts the voltage of an input DC power supply 5 to generate a drive bias signal DBS for driving and conducting a first semiconductor switch Q110 and a second semiconductor switch Q120, and supplies the drive bias signal DBS to a first gate terminal G110 and a second gate terminal G120. Therefore, even in applications such as motors that flow large currents of tens to hundreds of A, it is possible to reliably drive the semiconductor relays without using an insulating transformer or the like. Moreover, the entire circuit including the semiconductor relay can be miniaturized.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a control circuit for controlling a semiconductor relay module.

  A circuit that drives a motor with electric power supplied from a battery is usually configured by a battery unit, a relay unit, an inverter unit, and a motor unit. Conventionally, mechanical relay switches have been used for the relay section. However, mechanical relay switches are difficult not only for problems such as surge noise and contact deterioration due to chattering, but also for miniaturization and cost reduction. In recent years, there has been an increasing demand for replacing a mechanical relay switch with a semiconductor switch.

  When the relay unit is configured using a semiconductor switch, for example, there is a configuration as shown in FIG. In this circuit 2, two semiconductor switches Q510 and Q520 are connected to each other via source terminals S510 and S520, and a bias voltage whose gate potential is higher than the source potential is applied to the semiconductor switches Q510 and Q520. In addition, the drive circuits for the semiconductor switches Q510 and Q520 are configured to be electrically floating with respect to the battery unit.

  As a semiconductor relay used in such a configuration, for example, a semiconductor relay disclosed in FIG. 1 of Patent Document 1 can be used.

JP-A-5-191244

  However, in semiconductor relays for applications such as motors that flow large currents of several tens to several hundreds A, driving capability is insufficient only by optical signal driving, so that reliable driving becomes difficult. For this reason, in applications such as a motor that flows a large current of several tens to several hundreds of A, a drive circuit to which an insulating transformer and a buffer circuit are added is necessary, and there is a problem that the entire circuit is increased in size.

  The present invention has been made in view of the above problems, and even in applications such as motors that flow large currents of tens to hundreds of A, it becomes possible to reliably drive semiconductor relays without using an insulation transformer, And it aims at providing the control circuit which controls the semiconductor relay module which can miniaturize the whole circuit containing a semiconductor relay.

  The present invention proposes the following matters in order to solve the above problems.

  A first semiconductor relay switch having a first drain terminal, a first gate terminal and a first source terminal; and a second semiconductor relay switch having a second drain terminal, a second gate terminal and a second source terminal; A control circuit for a semiconductor relay module that conducts or opens between a DC power source and an output load. The semiconductor relay module has a first drain terminal and a second drain terminal connected to each other, and a first gate terminal and a second gate terminal. The gate terminal is connected to each other, the first source terminal and the positive electrode of the input DC power supply are connected to each other, and the second source terminal and the output load are connected to each other. A drive bias signal for conducting and driving the semiconductor switch and the second semiconductor switch is generated, and the drive bias signal is generated at the first gate terminal and the second gate terminal. Have proposed a control circuit of the semiconductor relay module, characterized in that it comprises a drive bias signal supply unit supplies.

  An input / output voltage detector for detecting a voltage between the first source terminal and the second source terminal and detecting a voltage difference between the input DC power supply and the output load as an input / output voltage difference value; The supply unit proposes a control circuit for a semiconductor relay module, which generates a drive bias signal based on the input / output voltage detection value detected by the input / output voltage detection unit.

  A control circuit for a semiconductor relay module is proposed in which the voltage value of the drive bias signal is controlled to be a value inversely proportional to the input / output voltage difference value.

  A conduction current detector for detecting a conduction current value that flows when the first semiconductor relay switch and / or the second semiconductor relay switch is conducted by the conduction resistance of the first semiconductor relay switch and / or the second semiconductor relay switch; The drive bias signal supply unit proposes a control circuit for a semiconductor relay module that generates a drive bias signal based on a conduction current value.

  When the conduction current detection unit detects a predetermined first conduction current value set in advance, the drive bias signal supply unit stops generating the drive bias signal. is suggesting.

  A switch temperature detection unit that detects the temperature of the first semiconductor relay switch and / or the second semiconductor relay switch, and when the switch temperature detection unit detects a predetermined first temperature value set in advance, a drive bias signal The supply unit proposes a control circuit for the semiconductor relay module, characterized in that the generation of the drive bias signal is stopped.

  The drive bias signal supply unit is a charge pump circuit or a chopper circuit, and a semiconductor relay module control circuit is proposed.

  According to the control circuit of the semiconductor relay module according to the present invention, the drive bias signal supply unit generates a drive bias signal for boosting the input DC power source and drivingly conducting the first semiconductor switch and the second semiconductor switch. A drive bias signal is supplied to the gate terminal and the second gate terminal.

  Therefore, even in applications such as a motor that flows a large current of several tens to several hundreds of A, the semiconductor relay can be reliably driven without using an insulating transformer or the like, and the entire circuit including the semiconductor relay can be downsized.

  According to the control circuit of the semiconductor relay module according to the present invention, the input / output voltage detector detects the voltage between the first source terminal and the second source terminal, and the voltage between the input DC power supply and the output load. The difference is detected as an input / output voltage difference value, and the drive bias signal supply unit generates the drive bias signal based on the input / output voltage detection value detected by the input / output voltage detection unit.

  Therefore, the conduction resistances of the first semiconductor switch and the second semiconductor switch can be controlled corresponding to the input / output voltage. For example, when the input / output voltage is large at a transitional timing at which the first semiconductor switch and the second semiconductor switch are switched from open to conduction, an excessive inrush current flows through the first semiconductor switch and the second semiconductor switch. And the safety of a circuit including a semiconductor relay can be improved.

  According to the control circuit of the semiconductor relay module according to the present invention, the voltage value of the drive bias signal is controlled to be a value inversely proportional to the input / output voltage difference value.

  Therefore, the conduction resistances of the first semiconductor switch and the second semiconductor switch can be reliably controlled corresponding to the input / output voltage.

  According to the control circuit of the semiconductor relay module according to the present invention, the conduction current detection unit is configured to detect the first semiconductor relay switch and / or the second semiconductor relay by the conduction resistance of the first semiconductor relay switch and / or the second semiconductor relay switch. A conduction current value that flows when the switch is conducted is detected, and the drive bias signal supply unit generates a drive bias signal based on the conduction current value.

  Therefore, it is possible to control the conduction resistance of the first semiconductor switch and the second semiconductor switch corresponding to the conduction current value without providing a separate resistance component, and the first semiconductor switch and the second semiconductor switch are conducted from the open state. It is possible to suppress an excessive inrush current from flowing through the first semiconductor switch and the second semiconductor switch at the time of switching to and to improve the safety of the circuit including the semiconductor relay.

  According to the control circuit of the semiconductor relay module according to the present invention, when the conduction current detection unit detects a predetermined first conduction current value set in advance, the drive bias signal supply unit generates the drive bias signal. The supply is stopped, the supply of the drive bias signal is stopped, and the supply of the drive bias signal is stopped.

  Thereby, a 1st semiconductor relay switch and a 2nd semiconductor relay switch will be in an open state, it can prevent that an excessive conduction | electrical_current flows, and can improve the safety | security of the circuit containing a semiconductor relay.

  According to the control circuit of the semiconductor relay module according to the present invention, the switch temperature detection unit detects the temperature of the first semiconductor relay switch and / or the second semiconductor relay switch, and the switch temperature detection unit has a predetermined value set in advance. When the first temperature value is detected, the drive bias signal supply unit stops generating the drive bias signal and stops supplying the drive bias signal.

  Accordingly, the first semiconductor relay switch and the second semiconductor relay switch are opened, and the first semiconductor relay switch and / or the second semiconductor relay switch are prevented from being overheated, and the safety of the circuit including the semiconductor relay is increased. Can be increased.

  According to the control circuit of the semiconductor relay module according to the present invention, since the drive bias signal supply unit is a charge pump circuit or a chopper circuit, the voltage of the drive bias signal can be stabilized. Safety can be increased.

1 is a configuration diagram of a circuit 1 including a semiconductor relay module control circuit 200 and a semiconductor relay module 100 according to an embodiment of the present invention. It is a 1st circuit structural example of the drive bias signal supply part 210 of the control circuit 200 of the semiconductor relay module which concerns on embodiment of this invention. It is a 2nd circuit structural example of the drive bias signal supply part 210 of the control circuit 200 of the semiconductor relay module which concerns on embodiment of this invention. 1 is a configuration diagram of a conventional circuit 2 including a semiconductor relay module 500. FIG.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. It should be noted that the constituent elements in the present embodiment can be appropriately replaced with existing constituent elements and the like, and various variations in combination with other existing constituent elements are possible. Therefore, the description of the present embodiment does not limit the contents of the invention described in the claims.

  FIG. 1 is a circuit diagram of a circuit 1 configured using a control circuit 200 and a semiconductor relay module 100 according to an embodiment of the present invention. FIG. 2 is a first circuit configuration example of the drive bias signal supply unit 210 of the control circuit 200 according to the embodiment of the present invention. FIG. 3 is a second circuit configuration example of the drive bias signal supply unit 210 of the control circuit 200 according to the embodiment of the present invention.

  The circuit 1 includes an input DC power supply 5, an output load 10, a semiconductor relay module 100, a control circuit 200, and a CPU (Central Processing Unit) 300. The semiconductor relay module 100 is provided between the input DC power supply 5 and the output load 10, and conducts or opens between the input DC power supply 5 and the output load 10.

  The conduction or opening operation of the semiconductor relay module 100 is controlled by the control circuit 200. The control of the control circuit 200 operates by receiving a command signal from the CPU 300, for example. In the present embodiment, the CPU 300 is configured to receive power from the input DC power supply 5.

  The semiconductor relay relay module 100 includes a terminal 101, a terminal 102, a terminal 103, and a terminal 104. Further, the semiconductor relay element 100 includes a semiconductor relay switch Q110 and a second semiconductor relay switch Q120.

  The semiconductor relay switch Q110 has a first drain terminal D110, a first gate terminal G110, and a first source terminal S110. The second semiconductor relay switch Q120 has a second drain terminal D120, a second gate terminal G120, and a second source terminal S120.

  The first drain terminal D110 and the second drain terminal D120 are electrically connected to each other at the connection point 150. The first source terminal S110 is electrically connected to the terminal 101. The second source terminal S120 is electrically connected to the terminal 102.

  In the semiconductor relay module 100, the first gate terminal G110 and the second gate terminal G120 are electrically connected to each other.

  The control circuit 200 controls the conduction or opening operation of the semiconductor relay module 100. The control circuit 200 includes a drive bias signal supply unit 210, an input / output voltage detection unit 220, a conduction current detection unit 230, a terminal 201, a terminal 202, a terminal 203, a terminal 204, a terminal 205, a terminal, 206 and a switch temperature detector (not shown). The output load 10 includes a terminal 11 and a terminal 12.

  The positive electrode of the input DC power supply 5, the terminal 101, and the terminal 201 are electrically connected. The terminal 11, the terminal 102, and the terminal 202 are electrically connected. The negative electrode, the terminal 12, the terminal 205, and the ground GND of the input DC power supply 5 are electrically connected. The terminals 103 and 203 are electrically connected. The terminal 104, the connection point 150, and the terminal 204 are electrically connected.

  The drive bias signal supply unit 210 is connected to the terminal 201, the terminal 203, the terminal 205, and the terminal 206. The input / output voltage detection unit 220 is connected to the drive bias signal supply unit 210, the terminal 201, and the terminal 202. The conduction current detection unit 230 is connected to the terminal 201, the terminal 202, the terminal 204, the drive bias signal supply unit 210, and the input / output voltage detection unit 220.

  The drive bias signal supply unit 210 is connected to the CPU 300 via the terminal 206, receives a command signal (conduction command signal) from the CPU 300, boosts the input DC power supply 5, and the first semiconductor switch Q110 and the second semiconductor switch Q110. A drive bias signal DBS for conducting the switch Q120 is generated.

  The drive bias signal supply unit 210 supplies the drive bias signal DBS to the first gate terminal G110 and the second gate terminal G120 via the terminal 203 and the terminal 103.

  The input / output voltage detector 220 detects the voltage between the first source terminal S110 and the second source terminal S120, and detects the voltage between the input DC power supply 5 and the output load 10 as an input / output voltage difference value. .

  By the way, at the transient timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from the open state to the conductive state, the input / output voltage is larger than that in the conductive state. Therefore, at a transient timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from the open state to the conductive state, an excessive inrush current flows to the semiconductor relay module 100, and the first semiconductor switch Q110 and / or the second semiconductor switch Q110. There is a concern that the semiconductor switch Q120 may be destroyed.

  Therefore, in the control circuit 200, the drive bias signal supply unit 210 generates the drive bias signal DBS based on the input / output voltage detection value detected by the input / output voltage detection unit 220. In this case, it is preferable to control the voltage value of the drive bias signal DBS to be a value inversely proportional to the input / output voltage difference value.

  With this control, the conduction resistances of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be controlled corresponding to the input / output voltage. By controlling the voltage value of the drive bias signal DBS to be a value inversely proportional to the input / output voltage difference value, the first semiconductor switch Q110 and the second semiconductor switch Q120 are transitively switched from open to conductive. At the timing, the conduction resistance of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be made higher than the conduction state.

  Thereby, it is possible to suppress an excessive inrush current from flowing into the semiconductor relay module 100 at a transitional timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from open to conduction, and the circuit including the semiconductor relay can be suppressed. Safety can be increased.

  Note that when voltage-driven switches such as MOSFETs or IGBTs are used as the first semiconductor switch Q110 and the second semiconductor switch Q120, the voltage value of the drive bias signal DBS is input / output in actual operation due to the effect of the Miller effect or the like. Control that cannot be controlled so as to be completely inversely proportional to the voltage, but includes a period in which the voltage value of the drive bias signal DBS is inversely proportional to the input / output voltage. If it is, it will be within the scope of the present invention.

  Thereby, it is possible to suppress an excessive inrush current from flowing into the semiconductor relay module 100 at a transitional timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from open to conduction, and the circuit including the semiconductor relay can be suppressed. Safety can be increased.

  The conduction current detection unit 230 is a conduction current that flows when the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120 is conducted by the conduction resistance of the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120. Detect value.

  In FIG. 1, the conduction current detection unit 230 is configured to detect the conduction resistance of the semiconductor relay switch Q110. However, the conduction current detection unit 230 may be configured to detect the conduction resistance of the second semiconductor relay switch Q120. Alternatively, the semiconductor relay switch Q110 and the second semiconductor relay switch Q120 may be configured to detect the conduction resistance of both.

  The drive bias signal supply unit 210 generates a drive bias signal DBS based on the conduction current value.

  When the conduction current detection unit 230 detects a predetermined first conduction current value set in advance, the drive bias signal supply unit 210 stops generating the drive bias signal DBS and stops supplying the drive bias signal DBS. To do.

  Thereby, the 1st semiconductor relay switch Q110 and the 2nd semiconductor relay switch Q120 will be in an open state, it can prevent that an excessive conduction | electrical_current flows, and can improve the safety | security of the circuit containing a semiconductor relay.

  The switch temperature detection unit detects the temperature of the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120. When the switch temperature detection unit detects a predetermined first temperature value set in advance, the drive bias signal supply unit 210 stops generating the drive bias signal DBS.

  As a result, the drive bias signal supply unit 210 stops supplying the drive bias signal DBS, and the first semiconductor relay switch Q110 and the second semiconductor relay switch Q120 are opened.

  In the circuit 1, the first voltage V <b> 1 is applied between the terminals 101 and 12 by the power supply of the input DC power supply 5. Between the terminal 101 and the terminal 102, the semiconductor relay switch Q110 and the second semiconductor relay switch Q120 are electrically connected or opened, whereby the input DC power supply 5 and the output load 10 are electrically connected or opened.

  The control circuit 200 operates in response to, for example, a command signal (a conduction command signal or an open command signal) from the CPU 300, and controls the voltage between the terminal 103 and the ground GND of the circuit 1 to control the semiconductor relay module 100. It shall be in the conductive state or open state.

  When the semiconductor relay module 100 is brought into a conducting state, the drive bias signal supply unit 210 of the control circuit 200 that has received a command signal (conduction command signal) from the CPU 300 boosts the voltage of the input DC power source 5 to the first. A drive bias signal DBS for conducting the semiconductor switch Q110 and the second semiconductor switch Q120 is generated, and the drive bias signal DBS is supplied to the first gate terminal G110 and the second gate terminal G120.

  On the other hand, when the semiconductor relay module 100 is in an open state, the drive bias signal supply unit 210 of the control circuit 200 that has received a command signal (open command signal) from the CPU 300 stops generating the drive bias signal DBS, The supply of the drive bias signal DBS to the first gate terminal G110 and the second gate terminal G120 is stopped.

  The voltage level of the drive bias signal DBS is controlled to, for example, a second voltage V2 obtained by adding the first voltage V1 and a voltage equal to or higher than the gate threshold voltage Vth of the semiconductor relay switch Q110 and the second semiconductor relay switch Q120.

  The drive bias signal supply unit 210 is preferably a charge pump circuit or a chopper circuit.

  When the drive bias signal supply unit 210 is configured by a charge pump circuit (first circuit configuration example), a configuration example as shown in FIG.

  In the first circuit configuration example, the drive bias signal supply unit 210 includes a switch 211a, a switch 211b, a drive circuit unit 212, a capacitor 213, a comparator 214, a reference power source 215, a resistor 216a, a resistor 216b, a diode 217a, a diode 217b, and a capacitor. 218.

  The drive circuit unit 212 receives a command signal (conduction command signal) from the CPU 300, drives the switch 211a, and compares the voltage divided by the resistor 216a and the resistor 216b with the voltage of the reference power source 215 and outputs the result. Based on the output information of the comparator 214, the switch 211b is turned on or off.

  As a result, the control circuit 200 generates a drive bias signal DBS that boosts the input DC power supply 5 and drives the first semiconductor switch Q110 and the second semiconductor switch Q120 to conduct. The drive bias signal supply unit 210 supplies the drive bias signal DBS to the first gate terminal G110 and the second gate terminal G120 via the terminal 203 and the terminal 103.

  When the drive bias signal supply unit 210 is configured by a chopper circuit (second circuit configuration example), a configuration example as illustrated in FIG. 3 is used.

  In the second circuit configuration example, the drive bias signal supply unit 210 includes a switch 221, a drive circuit unit 222, a diode 223, a comparator 224, a reference power supply 225, a resistor 226a, a resistor 226b, and a capacitor 228.

  The drive circuit unit 222 receives a command signal (conduction command signal) from the CPU 300, drives the switch 221, compares the voltage divided by the resistors 226 a and 226 b with the voltage of the reference power source 225 and outputs the result. Based on the output information of the comparator 224, the drive circuit unit 222 turns the switch 221 on or off.

  As a result, the control circuit 200 generates a drive bias signal DBS that boosts the input DC power supply 5 and drives the first semiconductor switch Q110 and the second semiconductor switch Q120 to conduct. The drive bias signal supply unit 210 supplies the drive bias signal DBS to the first gate terminal G110 and the second gate terminal G120 via the terminal 203 and the terminal 103.

  As described above, according to the control circuit 200, the drive bias signal supply unit 210 boosts the voltage of the input DC power supply 5 to generate the drive bias signal DBS for conducting the first semiconductor switch Q110 and the second semiconductor switch Q120. Then, the drive bias signal DBS is supplied to the first gate terminal G110 and the second gate terminal G120.

  Therefore, even in applications such as a motor that flows a large current of several tens to several hundreds of A, the semiconductor relay can be reliably driven without using an insulating transformer or the like, and the entire circuit including the semiconductor relay can be downsized.

  According to the control circuit 200, the input / output voltage detector 220 detects the voltage between the first source terminal S110 and the second source terminal S120, and inputs the voltage between the input DC power supply 5 and the output load 10. Detected as an output voltage difference value, the drive bias signal supply unit 210 generates a drive bias signal DBS based on the input / output voltage detection value detected by the input / output voltage detection unit 220.

  Therefore, the conduction resistances of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be controlled corresponding to the input / output voltage. For example, when the input / output voltage is large at the transitional timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from open to conduction, the first semiconductor switch Q110 and the second semiconductor switch Q120 are excessively rushed. The flow of current can be suppressed, and the safety of the circuit including the semiconductor relay can be improved.

  According to the control circuit 200, the voltage value of the drive bias signal is controlled to be a value inversely proportional to the input / output voltage difference value. Therefore, the conduction resistance of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be reliably controlled corresponding to the input / output voltage.

  According to the control circuit 200, the conduction current detection unit 230 causes the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120 to be connected by the conduction resistance of the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120. A conduction current value flowing when conducting is detected, and the drive bias signal supply unit 210 generates a drive bias signal DBS based on the conduction current value.

  Therefore, it is possible to control the conduction resistance of the first semiconductor switch Q110 and the second semiconductor switch Q120 corresponding to the conduction current value without providing a separate resistance component, and the first semiconductor switch Q110 and the second semiconductor switch Q120. Can be prevented from flowing an excessive inrush current to the first semiconductor switch Q110 and the second semiconductor switch Q120 when switching from open to conductive, and the safety of the circuit including the semiconductor relay can be improved.

  According to the control circuit 200, when the conduction current detector 230 detects a predetermined first conduction current value set in advance, the drive bias signal supply unit 210 stops generating the drive bias signal DBS. The conduction current exceeding the first conduction current value can be prevented from flowing, and the safety of the circuit including the semiconductor relay can be improved.

  According to the control circuit 200, the switch temperature detection unit (not shown) detects the temperature of the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120, and the switch temperature detection unit sets a predetermined first temperature set in advance. When the value is detected, the drive bias signal supply unit 210 stops generating the drive bias signal DBS.

  Therefore, the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120 can be prevented from being overheated, and the safety of the circuit including the semiconductor relay can be improved.

  According to the control circuit 200, since the drive bias signal supply unit 210 is a charge pump circuit or a chopper circuit, the voltage of the drive bias signal DBS can be stabilized, and the safety of the circuit including the semiconductor relay is improved. Can do.

  As mentioned above, although embodiment of this invention was described, this invention is not limited to embodiment mentioned above, A various deformation | transformation and application are possible within the range which does not deviate from the summary of this invention.

1: Circuit 5: DC power supply 10: Load 100: Semiconductor relay module Q110: First semiconductor switch Q120: Second semiconductor switch D110: First drain terminal G110: First gate terminal S110: First source terminal D120: Second drain Terminal G120: second gate terminal S120: second source terminal 100: semiconductor relay module 200: control circuit 210: drive bias signal supply unit 220: input / output voltage detection unit 230: conduction current detection unit

Claims (7)

A first semiconductor relay switch having a first drain terminal, a first gate terminal and a first source terminal; and a second semiconductor relay switch having a second drain terminal, a second gate terminal and a second source terminal; A control circuit for a semiconductor relay module that conducts or opens between a DC power source and an output load,
In the semiconductor relay module, the first drain terminal and the second drain terminal are connected to each other, the first gate terminal and the second gate terminal are connected to each other, the first source terminal and the input DC power supply Are connected to each other, and the second source terminal and the output load are connected to each other,
The input DC power supply is boosted to generate a drive bias signal for drivingly driving the first semiconductor switch and the second semiconductor switch, and the drive bias signal is supplied to the first gate terminal and the second gate terminal. A control circuit for a semiconductor relay module, comprising a drive bias signal supply unit. An input / output voltage detection unit that detects a voltage between the first source terminal and the second source terminal and detects a voltage difference between the input DC power supply and the output load as an input / output voltage difference value. ,
2. The semiconductor relay module according to claim 1, wherein the drive bias signal supply unit generates the drive bias signal based on the input / output voltage difference value detected by the input / output voltage difference detection unit. Control circuit.   3. The control circuit for a semiconductor relay module according to claim 2, wherein the voltage value of the drive bias signal is controlled to be a value inversely proportional to the input / output voltage difference value. Conduction current detection for detecting a conduction current value that flows when the first semiconductor relay switch and / or the second semiconductor relay switch is conducted by the conduction resistance of the first semiconductor relay switch and / or the second semiconductor relay switch. Part
4. The control circuit for a semiconductor relay module according to claim 1, wherein the drive bias signal supply unit generates the drive bias signal based on the conduction current value. 5.   5. The drive bias signal supply unit stops generating the drive bias signal when the conduction current detection unit detects a predetermined first conduction current value set in advance. 5. The control circuit of the semiconductor relay module described. A switch temperature detector for detecting the temperature of the first semiconductor relay switch and / or the second semiconductor relay switch;
6. The drive bias signal supply unit stops generating the drive bias signal when the switch temperature detection unit detects a predetermined first temperature value set in advance. The control circuit of the semiconductor relay module of any one of these.   The control circuit for a semiconductor relay module according to claim 1, wherein the drive bias signal supply unit is a charge pump circuit or a chopper circuit.

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