JP6628564B2 - Control circuit of semiconductor relay module - Google Patents

Description

  The present invention relates to a control circuit for controlling a semiconductor relay module.

  A circuit that drives a motor with electric power supplied from a battery usually includes a battery unit, a relay unit, an inverter unit, and a motor unit. Conventionally, a mechanical relay switch has been used for the relay unit. However, the mechanical relay switch has problems such as surge noise and deterioration of contacts due to chattering, and it is difficult to reduce the size and cost. In recent years, there has been an increasing demand for replacing a mechanical relay switch with a semiconductor switch.

  When a relay unit is configured using a semiconductor switch, for example, there is a configuration as shown in FIG. In this circuit 2, two semiconductor switches Q510 and Q520 are connected to each other at source terminals S510 and S520, and a bias voltage having a gate potential higher than the source potential is applied to the semiconductor switches Q510 and Q520. The drive circuit for the semiconductor switches Q510 and Q520 is configured to be electrically floating with respect to the battery unit.

  As the semiconductor relay used in such a configuration, for example, the one disclosed in FIG. 1 of Patent Document 1 can be used.

JP-A-5-191244

  However, in a semiconductor relay for an application such as a motor that flows a large current of several tens to several hundreds of amps, the driving ability is insufficient only by driving an optical signal, so that reliable driving is difficult. Therefore, in an application such as a motor for flowing a large current of several tens to several hundreds of A, a drive circuit having an insulating transformer and a buffer circuit is required, and there has been a problem that the entire circuit becomes large.

  The present invention has been made in view of the above problems, and even in applications such as a motor that flows a large current of several tens to several hundreds of A, it is possible to reliably drive a semiconductor relay without using an insulating transformer or the like, It is another object of the present invention to provide a control circuit for controlling a semiconductor relay module capable of reducing the size of an entire circuit including a semiconductor relay.

  The present invention proposes the following items in order to solve the above problems.

  A first semiconductor relay switch having a first drain terminal, a first gate terminal, and a first source terminal; and a second semiconductor relay switch having a second drain terminal, a second gate terminal, and a second source terminal. A control circuit for a semiconductor relay module that conducts or opens between a DC power supply and an output load, the semiconductor relay module having a first drain terminal and a second drain terminal connected to each other, a first gate terminal and a second gate terminal. The gate terminal is connected to each other, the first source terminal and the positive electrode of the input DC power supply are connected to each other, and the second source terminal and the output load are connected to each other. A drive bias signal for driving the semiconductor switch and the second semiconductor switch to be conductive is generated, and a drive bias signal is supplied to the first gate terminal and the second gate terminal. Have proposed a control circuit of the semiconductor relay module, characterized in that it comprises a drive bias signal supply unit supplies.

  An input / output voltage detector for detecting a voltage between the first source terminal and the second source terminal and detecting a voltage difference between an input DC power supply and an output load as an input / output voltage difference value; The supply unit proposes a control circuit for a semiconductor relay module, which generates a drive bias signal based on an input / output voltage detection value detected by the input / output voltage detection unit.

  A control circuit for a semiconductor relay module has been proposed in which the voltage value of the drive bias signal is controlled to be a value inversely proportional to the input / output voltage difference value.

  A conduction current detection unit that detects a conduction current value that flows when the first semiconductor relay switch and / or the second semiconductor relay switch is conducted by the conduction resistance of the first semiconductor relay switch and / or the second semiconductor relay switch; The drive bias signal supply unit proposes a control circuit for a semiconductor relay module, which generates a drive bias signal based on a conduction current value.

  When the conduction current detection unit detects a predetermined first conduction current value, the drive bias signal supply unit stops generating the drive bias signal, and controls the control circuit of the semiconductor relay module. is suggesting.

  A switch temperature detecting section for detecting a temperature of the first semiconductor relay switch and / or the second semiconductor relay switch, and when the switch temperature detecting section detects a predetermined first temperature value, a drive bias signal is generated. The supply unit proposes a control circuit for the semiconductor relay module, which stops generating the drive bias signal.

  The drive bias signal supply unit is a charge pump circuit or a chopper circuit, and proposes a control circuit for a semiconductor relay module.

  According to the control circuit of the semiconductor relay module according to the present invention, the drive bias signal supply unit generates a drive bias signal for boosting the input DC power supply to drive the first semiconductor switch and the second semiconductor switch to conduct. A drive bias signal is supplied to the gate terminal and the second gate terminal.

  Therefore, even in applications such as a motor that flows a large current of several tens to several hundreds of amps, the semiconductor relay can be reliably driven without using an insulating transformer or the like, and the entire circuit including the semiconductor relay can be downsized.

  According to the control circuit of the semiconductor relay module according to the present invention, the input / output voltage detector detects the voltage between the first source terminal and the second source terminal, and detects the voltage between the input DC power supply and the output load. The difference is detected as an input / output voltage difference value, and the drive bias signal supply unit generates the drive bias signal based on the input / output voltage detection value detected by the input / output voltage detection unit.

  Therefore, the conduction resistance of the first semiconductor switch and the second semiconductor switch can be controlled according to the input / output voltage. For example, when the input / output voltage is large at the transient timing when the first semiconductor switch and the second semiconductor switch are switched from open to conduction, an excessive rush current flows through the first semiconductor switch and the second semiconductor switch. Can be suppressed, and the safety of the circuit including the semiconductor relay can be improved.

  According to the control circuit for a semiconductor relay module of the present invention, the voltage value of the drive bias signal is controlled to be a value that is inversely proportional to the input / output voltage difference value.

  Therefore, the conduction resistance of the first semiconductor switch and the second semiconductor switch can be reliably controlled according to the input / output voltage.

  According to the control circuit of the semiconductor relay module according to the present invention, the conduction current detection unit is configured to control the first semiconductor relay switch and / or the second semiconductor relay by the conduction resistance of the first semiconductor relay switch and / or the second semiconductor relay switch. The drive bias signal supply unit detects a conduction current value flowing when the switch is turned on, and generates a drive bias signal based on the conduction current value.

  Therefore, the conduction resistance of the first semiconductor switch and the second semiconductor switch can be controlled in accordance with the conduction current value without providing a separate resistance component, so that the first semiconductor switch and the second semiconductor switch become conductive from the open state. It is possible to suppress an excessive rush current from flowing through the first semiconductor switch and the second semiconductor switch when switching to, and to enhance the safety of a circuit including the semiconductor relay.

  According to the control circuit of the semiconductor relay module according to the present invention, when the conduction current detection unit detects the predetermined first conduction current value, the drive bias signal supply unit generates the drive bias signal. Then, the supply of the drive bias signal is stopped, and the supply of the drive bias signal is stopped.

  Thereby, the first semiconductor relay switch and the second semiconductor relay switch are opened, and it is possible to prevent an excessive conduction current from flowing, and to enhance the safety of a circuit including the semiconductor relay.

  According to the control circuit of the semiconductor relay module according to the present invention, the switch temperature detector detects the temperature of the first semiconductor relay switch and / or the second semiconductor relay switch, and the switch temperature detector detects a predetermined temperature. When detecting the first temperature value, the drive bias signal supply unit stops generating the drive bias signal and stops supplying the drive bias signal.

  This prevents the first semiconductor relay switch and the second semiconductor relay switch from being opened, prevents the first semiconductor relay switch and / or the second semiconductor relay switch from being overheated, and secures the circuit including the semiconductor relay. Can be increased.

  According to the control circuit of the semiconductor relay module according to the present invention, since the drive bias signal supply unit is a charge pump circuit or a chopper circuit, the voltage of the drive bias signal can be stabilized, and a circuit including the semiconductor relay is provided. Safety can be improved.

1 is a configuration diagram of a circuit 1 including a semiconductor relay module control circuit 200 and a semiconductor relay module 100 according to an embodiment of the present invention. 4 is a first circuit configuration example of a drive bias signal supply unit 210 of the control circuit 200 of the semiconductor relay module according to the embodiment of the present invention. 5 is a second circuit configuration example of the drive bias signal supply unit 210 of the control circuit 200 of the semiconductor relay module according to the embodiment of the present invention. FIG. 3 is a configuration diagram of a conventional circuit 2 including a semiconductor relay module 500.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the components in the present embodiment can be appropriately replaced with existing components and the like, and various variations can be made in combination with other existing components. Therefore, the description of the present embodiment does not limit the contents of the invention described in the claims.

  FIG. 1 is a circuit diagram of a circuit 1 configured using a control circuit 200 and a semiconductor relay module 100 according to an embodiment of the present invention. FIG. 2 is a first circuit configuration example of the drive bias signal supply unit 210 of the control circuit 200 according to the embodiment of the present invention. FIG. 3 is a second circuit configuration example of the drive bias signal supply unit 210 of the control circuit 200 according to the embodiment of the present invention.

  The circuit 1 includes an input DC power supply 5, an output load 10, a semiconductor relay module 100, a control circuit 200, and a CPU (Central Processing Unit) 300. The semiconductor relay module 100 is provided between the input DC power supply 5 and the output load 10, and conducts or opens the connection between the input DC power supply 5 and the output load 10.

  The operation of turning on or off the semiconductor relay module 100 is controlled by the control circuit 200. The control of the control circuit 200 operates, for example, in response to a command signal from the CPU 300. In this embodiment, the CPU 300 is configured to receive power from the input DC power supply 5.

  The semiconductor relay module 100 includes a terminal 101, a terminal 102, a terminal 103, and a terminal 104. Further, the semiconductor relay element 100 includes a semiconductor relay switch Q110 and a second semiconductor relay switch Q120.

  The semiconductor relay switch Q110 has a first drain terminal D110, a first gate terminal G110, and a first source terminal S110. The second semiconductor relay switch Q120 has a second drain terminal D120, a second gate terminal G120, and a second source terminal S120.

  The first drain terminal D110 and the second drain terminal D120 are electrically connected to each other at a connection point 150. The first source terminal S110 is electrically connected to the terminal 101. The second source terminal S120 is electrically connected to the terminal 102.

  In the semiconductor relay module 100, the first gate terminal G110 and the second gate terminal G120 are electrically connected to each other.

  The control circuit 200 controls the operation of turning on or off the semiconductor relay module 100. The control circuit 200 includes a drive bias signal supply unit 210, an input / output voltage detection unit 220, a conduction current detection unit 230, a terminal 201, a terminal 202, a terminal 203, a terminal 204, a terminal 205, a terminal 206 and a switch temperature detector (not shown). The output load 10 includes a terminal 11 and a terminal 12.

  The positive electrode of input DC power supply 5, terminal 101, and terminal 201 are electrically connected. The terminal 11, the terminal 102, and the terminal 202 are electrically connected. The negative electrode of the input DC power supply 5, the terminal 12, the terminal 205, and the ground GND are electrically connected. The terminals 103 and 203 are electrically connected. The terminal 104, the connection point 150, and the terminal 204 are electrically connected.

  The drive bias signal supply unit 210 is connected to the terminals 201, 203, 205, and 206. The input / output voltage detection unit 220 is connected to the drive bias signal supply unit 210, the terminal 201, and the terminal 202. The conduction current detection unit 230 is connected to the terminals 201, 202, 204, the drive bias signal supply unit 210, and the input / output voltage detection unit 220.

  The drive bias signal supply section 210 is connected to the CPU 300 via the terminal 206, receives a command signal (conduction command signal) from the CPU 300, boosts the input DC power supply 5, and increases the first semiconductor switch Q110 and the second semiconductor switch Q110. A drive bias signal DBS for conducting the switch Q120 is generated.

  Further, the drive bias signal supply unit 210 supplies the drive bias signal DBS to the first gate terminal G110 and the second gate terminal G120 via the terminals 203 and 103.

  The input / output voltage detector 220 detects a voltage between the first source terminal S110 and the second source terminal S120, and detects a voltage between the input DC power supply 5 and the output load 10 as an input / output voltage difference value. .

  By the way, at the transitional timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from the open state to the conductive state, the input / output voltage is higher than the conductive state. Therefore, at a transitional timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from open to conduction, an excessive rush current flows through the semiconductor relay module 100, and the first semiconductor switch Q110 and / or the second There is a concern that the semiconductor switch Q120 may be broken.

  Therefore, in the control circuit 200, the drive bias signal supply unit 210 generates the drive bias signal DBS based on the input / output voltage detection value detected by the input / output voltage detection unit 220. In this case, it is preferable to control the voltage value of the drive bias signal DBS to be a value that is inversely proportional to the input / output voltage difference value.

  With this control, the conduction resistance of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be controlled according to the input / output voltage. By controlling the voltage value of the drive bias signal DBS to be a value that is inversely proportional to the input / output voltage difference value, the transient state in which the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from open to conduction. At the timing, the conduction resistance of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be increased as compared with the conduction state.

  Thereby, at the transient timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from open to conduction, an excessive rush current can be suppressed from flowing through the semiconductor relay module 100, and the circuit including the semiconductor relay can be suppressed. Safety can be improved.

  When a voltage-driven switch such as a MOSFET or an IGBT is used as the first semiconductor switch Q110 and the second semiconductor switch Q120, the voltage value of the drive bias signal DBS is actually input / output due to the effect of the mirror effect and the like. Although it is not possible to control the voltage value to be completely inversely proportional to the voltage, the control is performed such that the period in which the voltage value of the drive bias signal DBS is inversely proportional to the input / output voltage is partially included Then, the implementation is within the scope of the present invention.

  Thereby, at the transient timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from open to conduction, an excessive rush current can be suppressed from flowing through the semiconductor relay module 100, and the circuit including the semiconductor relay can be suppressed. Safety can be improved.

  The conduction current detection unit 230 is a conduction current that flows when the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120 conducts due to the conduction resistance of the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120. Find the value.

  In FIG. 1, the conduction current detector 230 is configured to detect the conduction resistance of the semiconductor relay switch Q110, but may be configured to be able to detect the conduction resistance of the second semiconductor relay switch Q120. The semiconductor relay switch Q110 and the second semiconductor relay switch Q120 may be configured to be able to detect the conduction resistance of both.

  The drive bias signal supply unit 210 generates a drive bias signal DBS based on the conduction current value.

  When the conduction current detection unit 230 detects a predetermined first conduction current value, the drive bias signal supply unit 210 stops generating the drive bias signal DBS and stops supplying the drive bias signal DBS. I do.

  As a result, the first semiconductor relay switch Q110 and the second semiconductor relay switch Q120 are opened, preventing an excessive conduction current from flowing, and increasing the safety of the circuit including the semiconductor relay.

  The switch temperature detector detects the temperature of the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120. When the switch temperature detection unit detects the predetermined first temperature value set in advance, the drive bias signal supply unit 210 stops generating the drive bias signal DBS.

  Accordingly, the drive bias signal supply unit 210 stops supplying the drive bias signal DBS, and the first semiconductor relay switch Q110 and the second semiconductor relay switch Q120 are opened.

  In the circuit 1, the first voltage V1 is applied between the terminals 101 and 12 by the power supply of the input DC power supply 5. Between the terminal 101 and the terminal 102, the semiconductor relay switch Q110 and the second semiconductor relay switch Q120 conduct or open, so that the input DC power supply 5 and the output load 10 conduct or open.

  The control circuit 200 operates by receiving a command signal (a conduction command signal or an open command signal) from the CPU 300, for example, and controls the voltage between the terminal 103 and the ground GND of the circuit 1 to control the semiconductor relay module 100. Conductive state or open state.

  When the semiconductor relay module 100 is turned on, the drive bias signal supply unit 210 of the control circuit 200 that has received the command signal (conduction command signal) from the CPU 300 raises the voltage of the input DC power supply 5 to the first A drive bias signal DBS for driving the semiconductor switch Q110 and the second semiconductor switch Q120 to be conductive is generated, and the drive bias signal DBS is supplied to the first gate terminal G110 and the second gate terminal G120.

  On the other hand, when the semiconductor relay module 100 is set to the open state, the drive bias signal supply unit 210 of the control circuit 200 that has received the command signal (open command signal) from the CPU 300 stops generating the drive bias signal DBS, The supply of the drive bias signal DBS to the first gate terminal G110 and the second gate terminal G120 is stopped.

  The voltage level of the drive bias signal DBS is controlled to, for example, a second voltage V2 obtained by adding the first voltage V1 and a voltage equal to or higher than the gate threshold voltage Vth of the semiconductor relay switch Q110 and the second semiconductor relay switch Q120.

  The drive bias signal supply unit 210 is preferably a charge pump circuit or a chopper circuit.

  When the drive bias signal supply unit 210 is configured by a charge pump circuit (first circuit configuration example), the configuration example is as shown in FIG.

  In the first circuit configuration example, the drive bias signal supply unit 210 includes a switch 211a, a switch 211b, a drive circuit unit 212, a capacitor 213, a comparator 214, a reference power supply 215, a resistor 216a, a resistor 216b, a diode 217a, a diode 217b, and a capacitor. 218.

  Drive circuit section 212 receives a command signal (conduction command signal) from CPU 300, drives switch 211a, compares the voltage divided by resistors 216a and 216b with the voltage of reference power supply 215, and outputs the result. The switch 211b is turned on or off based on the output information of the comparator 214.

  As a result, the control circuit 200 generates the drive bias signal DBS for boosting the input DC power supply 5 to drive the first semiconductor switch Q110 and the second semiconductor switch Q120 to conduct. The drive bias signal supply unit 210 supplies a drive bias signal DBS to the first gate terminal G110 and the second gate terminal G120 via the terminals 203 and 103.

  When the drive bias signal supply unit 210 is configured by a chopper circuit (second circuit configuration example), the configuration example is as shown in FIG.

  In the second circuit configuration example, the drive bias signal supply unit 210 includes a switch 221, a drive circuit unit 222, a diode 223, a comparator 224, a reference power supply 225, a resistor 226a, a resistor 226b, and a capacitor 228.

  Drive circuit section 222 receives a command signal (conduction command signal) from CPU 300, drives switch 221, compares the voltage divided by resistors 226 a and 226 b with the voltage of reference power supply 225, and outputs the result. The drive circuit 222 turns on or off the switch 221 based on the output information of the comparator 224.

  As a result, the control circuit 200 generates the drive bias signal DBS for boosting the input DC power supply 5 to drive the first semiconductor switch Q110 and the second semiconductor switch Q120 to conduct. The drive bias signal supply unit 210 supplies a drive bias signal DBS to the first gate terminal G110 and the second gate terminal G120 via the terminals 203 and 103.

  As described above, according to the control circuit 200, the drive bias signal supply unit 210 generates the drive bias signal DBS that boosts the voltage of the input DC power supply 5 and drives the first semiconductor switch Q110 and the second semiconductor switch Q120 to conduct. Then, the driving bias signal DBS is supplied to the first gate terminal G110 and the second gate terminal G120.

  Therefore, even in applications such as a motor that flows a large current of several tens to several hundreds of amps, the semiconductor relay can be reliably driven without using an insulating transformer or the like, and the entire circuit including the semiconductor relay can be downsized.

  According to the control circuit 200, the input / output voltage detector 220 detects the voltage between the first source terminal S110 and the second source terminal S120, and inputs the voltage between the input DC power supply 5 and the output load 10. Detected as an output voltage difference value, the drive bias signal supply unit 210 generates a drive bias signal DBS based on the input / output voltage detection value detected by the input / output voltage detection unit 220.

  Therefore, the conduction resistance of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be controlled according to the input / output voltage. For example, when the input / output voltage is large at the transient timing when the first semiconductor switch Q110 and the second semiconductor switch Q120 are switched from open to conduction, an excessive rush into the first semiconductor switch Q110 and the second semiconductor switch Q120. The current can be suppressed from flowing, and the safety of the circuit including the semiconductor relay can be improved.

  According to the control circuit 200, the voltage value of the drive bias signal is controlled to be a value that is inversely proportional to the input / output voltage difference value. Therefore, the conduction resistance of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be reliably controlled according to the input / output voltage.

  According to the control circuit 200, the conduction current detection unit 230 controls the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120 by the conduction resistance of the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120. The drive bias signal supply unit 210 detects a conduction current value flowing when the conduction is performed, and generates a drive bias signal DBS based on the conduction current value.

  Therefore, the conduction resistance of the first semiconductor switch Q110 and the second semiconductor switch Q120 can be controlled according to the conduction current value without providing a separate resistance component, and the first semiconductor switch Q110 and the second semiconductor switch Q120 can be controlled. Can suppress an excessive rush current from flowing through the first semiconductor switch Q110 and the second semiconductor switch Q120 when switching from the open state to the conductive state, and can enhance the safety of the circuit including the semiconductor relay.

  According to the control circuit 200, when the conduction current detection unit 230 detects the predetermined first conduction current value, the drive bias signal supply unit 210 stops generating the drive bias signal DBS. The conduction current exceeding the first conduction current value can be prevented from flowing, and the safety of the circuit including the semiconductor relay can be improved.

  According to the control circuit 200, the switch temperature detector (not shown) detects the temperature of the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120, and the switch temperature detector detects the predetermined first temperature. When detecting the value, the drive bias signal supply unit 210 stops generating the drive bias signal DBS.

  Therefore, it is possible to prevent the first semiconductor relay switch Q110 and / or the second semiconductor relay switch Q120 from being overheated, and to enhance the safety of a circuit including the semiconductor relay.

  According to the control circuit 200, since the drive bias signal supply unit 210 is a charge pump circuit or a chopper circuit, the voltage of the drive bias signal DBS can be stabilized, and the safety of a circuit including a semiconductor relay can be improved. Can be.

  Although the embodiments of the present invention have been described above, the present invention is not limited to the above-described embodiments, and various modifications and applications can be made without departing from the spirit of the present invention.

1: Circuit 5: DC power supply 10: Load 100: Semiconductor relay module Q110: First semiconductor switch Q120: Second semiconductor switch D110: First drain terminal G110: First gate terminal S110: First source terminal D120: Second drain Terminal G120: Second gate terminal S120: Second source terminal 100: Semiconductor relay module 200: Control circuit 210: Drive bias signal supply unit 220: Input / output voltage detection unit 230: Conduction current detection unit

Claims (6)

A first semiconductor relay switch having a first drain terminal, a first gate terminal, and a first source terminal; and a second semiconductor relay switch having a second drain terminal, a second gate terminal, and a second source terminal. A control circuit of a semiconductor relay module that conducts or opens between a DC power supply and an output load,
In the semiconductor relay module, the first drain terminal and the second drain terminal are connected to each other, the first gate terminal and the second gate terminal are connected to each other, the first source terminal and the input DC power supply. Are connected to each other, and the second source terminal and the output load are connected to each other;
The input DC power supply is stepped up to generate a drive bias signal for driving the first semiconductor relay switch and the second semiconductor relay switch to conduct, and the drive bias signal is applied to the first gate terminal and the second gate terminal. A drive bias signal supply unit for supplying ;
An input / output voltage detection unit that detects a voltage between the first source terminal and the second source terminal and detects a voltage difference between the input DC power supply and the output load as an input / output voltage difference value. Prepare,
The drive bias signal supply unit generates the drive bias signal based on the input / output voltage difference value detected by the input / output voltage detection unit,
The drive bias signal is a transitional timing at which the first semiconductor relay switch and the second semiconductor relay switch are switched from open to conductive, and when the first semiconductor relay switch and the second semiconductor relay switch are conductive. 3. The control circuit for a semiconductor relay module according to claim 1, wherein the control circuit controls a conduction resistance of the first semiconductor relay switch and the second semiconductor relay switch . Voltage value of the driving bias signal, the control circuit of the semiconductor relay module according to claim 1, wherein the controller controls such that a value that is inversely proportional to the input voltage difference value. The first semiconductor relay switch and / or the second semiconductor relay switch are connected to the first semiconductor relay switch and / or the second semiconductor relay switch, and are connected to the first semiconductor relay switch and / or the second semiconductor relay switch. (2) a conduction current detection unit that detects a conduction current value flowing when the semiconductor relay switch is conducted,
3. The control circuit according to claim 1, wherein the drive bias signal supply unit generates the drive bias signal based on the conduction current value. 4. If the conduction current detection unit detects a preset predetermined first conduction current value, the driving bias signal supply unit, to claim 3, characterized in that the stops generating the driving bias signal The control circuit of the semiconductor relay module described in the above. A switch temperature detector for detecting a temperature of the first semiconductor relay switch and / or the second semiconductor relay switch;
When the switching temperature detection unit detects a preset predetermined first temperature value, the driving bias signal supply unit according to claim 1 to 4, characterized in that stops generating the said drive bias signal The control circuit of a semiconductor relay module according to any one of the above. It said drive bias signal supply unit, the control circuit of the semiconductor relay module according to any one of claims 1 to 5, characterized in that a charge pump circuit or chopper circuit.

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