JP2017068087A - Adjustment method, lithography apparatus, imprinting apparatus, lithography system, and method for manufacturing product - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a temperature control method, a lithography apparatus, and an imprinting apparatus in which distortion of an object which is caused by a temperature difference between the object and a mounting part on which the object is mounted can be reduced.SOLUTION: A method for adjusting the temperature of an object 3 which is temperature-controlled by using a first temperature controller 13 and a mounting part 9 which is temperature-controlled by using a second temperature controller 16 in a system that mounts the object 3 onto the mounting part 9 has: an acquisition process of acquiring information regarding temperature variation over time of the mounting part 9 with the mounting of the object 3 by using temperature measuring means used in temperature control of the mounting part 9; and a changing process of changing a temperature control condition of at least one of the first temperature controller 13 and the second temperature controller 16 based on information regarding the temperature variation.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an adjustment method, a lithographic apparatus, an imprint apparatus, a lithography system, and an article manufacturing method.

  In a lithographic apparatus, when there is a temperature difference between a substrate holding unit (hereinafter referred to as a holding unit) whose temperature has been adjusted and the substrate, the substrate expands or contracts after the substrate is placed on the holding unit. As a result, the shape of the pattern area on the substrate is distorted, which may reduce the overlay accuracy.

  With respect to such a problem, the lithographic apparatus described in Patent Literature 1 changes the temperature of air used for temperature adjustment of the substrate before the substrate is placed on the holding unit. In the lithography apparatus, the temperature of the air for adjusting the temperature of the substrate and the temperature of the holding unit are measured using different temperature sensors. The controller compares the measured values of the respective temperature sensors, and changes the temperature of the air used for adjusting the substrate temperature based on the comparison result. Specifically, it is disclosed that the temperature of the air is changed so that the measurement value of the temperature sensor that measures the temperature of the air matches the measurement value of the temperature sensor that measures the temperature of the holding unit.

JP2011-82549 A

  However, the temperature sensor tends to generate measurement errors due to aging. That is, in the method described in Patent Document 1, even when the measured values of the two temperature sensors match, there is a temperature difference between the true value of the substrate temperature and the true value of the temperature of the holding unit. There is. Therefore, when the substrate is placed on the holding unit, the substrate is distorted, and the pattern region formed on the substrate is distorted, which may reduce the overlay accuracy.

  SUMMARY An advantage of some aspects of the invention is that it provides a temperature adjustment method, a lithography apparatus, and an imprint apparatus that can reduce distortion of an object due to the placement of an object on a placement unit.

  In the temperature adjustment method according to an embodiment of the present invention, the object in which the temperature is adjusted using the first temperature adjustment device is placed on the placement unit in which the temperature is adjusted using the second temperature adjustment device. A method of adjusting the temperature of an object and a placement unit, wherein the temperature of the placement unit is changed with time using the temperature measuring unit used to adjust the temperature of the placement unit. An acquisition step for acquiring information on the temperature, and a changing step for changing a temperature adjustment condition of at least one of the first temperature adjustment device and the second temperature adjustment device based on the information on the temperature change. And

  ADVANTAGE OF THE INVENTION According to this invention, the distortion of the object accompanying the mounting of the object on a mounting part can be reduced.

It is a figure which shows the structure of the exposure apparatus concerning 1st Embodiment. It is a figure explaining the temperature adjustment part concerning 1st Embodiment. It is a flowchart which shows the calibration method concerning 1st Embodiment. In 1st Embodiment, it is a figure which shows the method of calculating | requiring the temperature difference of a board | substrate and a holding part. It is a figure which shows the structure of the imprint apparatus concerning 2nd Embodiment. It is a figure explaining the temperature adjustment part concerning 2nd Embodiment. It is a flowchart which shows the calibration method concerning 2nd Embodiment. It is a figure which shows a part of structure of the imprint apparatus concerning 3rd Embodiment. It is a figure which shows the structure of the imprint apparatus concerning 4th Embodiment. It is a flowchart which shows the calibration method concerning 5th Embodiment.

[First Embodiment]
(Device configuration)
The configuration of an exposure apparatus (lithography apparatus) 1 according to the first embodiment will be described with reference to FIG. The exposure apparatus 1 irradiates KrF excimer laser light (wavelength 248 nm) as illumination light (beam) 6 while scanning the reticle (transfer body) 2 and the substrate (object) 3 to form a pattern formed on the reticle 2. Is a projection type exposure apparatus that transfers the image onto the substrate 3. In FIG. 1, an axis parallel to the optical axis of the projection optical system 4 (vertical direction in the present embodiment) is taken as the Z axis. In the plane perpendicular to the Z axis, the direction in which the reticle 2 scans during exposure is the X axis, and the non-scanning direction orthogonal to the X axis is the Y axis.

  Illumination light 6 shaped by the illumination optical system 5 is irradiated onto the substrate 3 via the reticle 2 and the projection optical system 4. The substrate 3 is, for example, a single crystal silicon substrate, and a photosensitive resin 8 is applied to the surface thereof. The reticle 2 is moved by the reticle stage 7. The reticle stage 7 has a stage top plate (not shown) for the reticle and a moving mechanism (not shown) for moving the stage top plate.

  The substrate 3 moves in six axial directions together with a holding unit (mounting unit) 9 that holds the substrate 3 and a substrate stage 10 on which the holding unit is mounted by a vacuum adsorption force or an electrostatic adsorption force. The substrate stage 10 has a substrate stage top plate (not shown) and a moving mechanism (not shown) for moving the stage top plate.

  The measurement unit 11 measures the position of an alignment mark (not shown) (hereinafter referred to as a mark) formed on the substrate 3. The measurement unit 11 is an off-axis alignment detection system that detects a mark without using the projection optical system 4. Based on the measurement result, the arrangement of the pattern areas of the underlayer on the substrate is determined.

  The transport mechanism 12 is a mechanism for placing the substrate 3 on the holding unit 9. In this specification, the position where the substrate before exposure waits, that is, the upper surface of the transport mechanism 12 is referred to as a standby position 15. A first temperature adjustment device 13 is provided above the transport mechanism 12.

  The control unit (changing unit) 14 is configured by a computer including a CPU and a storage medium such as a ROM and a RAM, for example. The storage medium included in the control unit 14 stores a program shown in the flowchart of FIG. Furthermore, the thermal capacity C1 of the substrate 3, the thermal capacity C2 of the holding unit 9, the thermal resistance Ra in the substrate 3 and the holding unit 9, and the thermal resistance Rb in the liquid A described later for adjusting the temperature of the holding unit 9 and the holding unit 9 are stored. Yes.

  The control unit 14 includes a holding unit 9, a reticle stage 7, a substrate stage 10, a measurement unit 11, a transport mechanism 12, a first temperature adjustment device (first temperature adjustment device) 13 described later, and a second temperature adjustment device (described later). (Second temperature control device) 16 is connected. When the CPU executes the program stored in the storage medium, it performs overall control. During the exposure process, the movement of the reticle stage 7 and the substrate stage 10 is controlled. You may comprise in the housing | casing which accommodates structural members other than the control part 14, and you may comprise in the housing | casing different from the said housing | casing.

  The control unit 14 sets a target temperature for each of the first temperature adjustment device 13 and the second temperature adjustment device 16. Further, at the time of temperature calibration, the difference between the temperature of the substrate 3 that has been temperature adjusted and the true value of the temperature of the holding unit 9 and the difference between the target temperatures set in the first temperature adjustment device 13 and the second temperature adjustment device 16 are as follows. The target temperature for the second temperature adjusting device 16 is changed so as to decrease.

  FIG. 2A is a view showing the first temperature adjusting device 13, the transport mechanism 12, and the substrate 3 placed on the transport mechanism 12. The 1st temperature control apparatus 13 has the structure which blows off the air in which the temperature was adjusted by the temperature control part 17 from the supply port 18b through the duct 18a. The supply port 18b includes a filter (not shown), and the filter prevents an organic substance, an inorganic substance, or the like slightly contained in the air from reaching the substrate 3.

  The temperature adjusting unit 17 includes a blower (not shown) that takes in air, a refrigerator (not shown) that cools the taken-in gas, and the gas cooled by the refrigerator reaches a target temperature (for example, 23.00 ° C.). And a heater (not shown) that heats precisely.

  The sensor 19 measures the temperature of the air supplied from the supply port 18b. The sensor 19 sends the measured value to the temperature adjustment unit 17. The temperature adjustment unit 17 performs feedback control based on the measurement result of the sensor 19 to adjust the temperature of the air blown onto the substrate 3. In this manner, the first temperature adjustment device 13 adjusts the temperature of the substrate 3 by blowing air adjusted to a predetermined temperature to the substrate 3 placed at the standby position 15.

  The temperature adjustment unit 17 is connected to the control unit 14. The temperature adjustment unit 17 adjusts the temperature of the air so that the measured value of the sensor 19 approaches the target temperature set by the control unit 14.

  The temperature measured by the sensor 19 is considered to be equivalent to the temperature of the substrate 3. In addition, the temperature of the substrate 3 is adjusted uniformly in the plane of the substrate 3 by blowing the air. It is assumed that the first temperature adjustment device 13 can adjust the temperature so that the temperature indicated by the sensor 19 matches the target temperature set by the control unit 14.

  FIG. 2B is a diagram showing the second temperature adjustment device 16, the holding unit 9, and the substrate stage 10. The second temperature adjusting device 16 includes a temperature adjusting unit 21, a pipe 22, and a sensor (measuring unit) 23.

  The temperature adjustment unit 21 adjusts the temperature of the liquid A supplied from the temperature adjustment unit 21 into the holding unit 9 via the pipe 22. The temperature adjustment unit 21 includes a refrigerator (not shown) that cools the liquid A, a pump (not shown) that sends out the liquid cooled by the refrigerator, and a cooled liquid sent from the pump at a predetermined temperature (for example, The heater is adjusted to 23.00 ° C. The temperature of the holding unit 9 is adjusted by adjusting the temperature of the liquid A.

  The sensor 23 measures the temperature of the liquid A supplied to the holding unit 9 through the pipe 22. The sensor 23 sends the measured value to the temperature adjustment unit 21. The temperature adjustment unit 21 performs feedback control based on the measurement result of the sensor 23 to adjust the temperature of the liquid A. In this way, the second temperature adjustment device 16 supplies the liquid A adjusted at a predetermined temperature to the holding surface 9a to adjust the temperature of the holding surface 9a.

  Further, as shown in FIG. 1, the temperature adjustment unit 21 and the sensor 23 are each connected to the control unit 14. The temperature adjustment unit 21 adjusts the temperature of the liquid A so that the measured value of the sensor 23 approaches the target temperature set by the control unit 14. The sensor 23 sends the measured value of the air temperature to the control unit 14.

  The temperature measured by the sensor 23 is considered to be equivalent to the temperature of the holding surface 9a of the substrate 3 by the holding unit 9. Further, it is assumed that the temperature of the holding surface 9a is uniformly adjusted in the holding surface by the temperature of the liquid A adjusted by the temperature adjusting unit 21. The second temperature adjustment device 16 adjusts the temperature so that the temperature indicated by the sensor 23 matches the target temperature set by the control unit 14.

  The temperature adjustment method of the liquid A by the temperature adjustment unit 21 is not limited to the method using a refrigerator and a heater. A Peltier element may be disposed instead of the heater, and the temperature of the liquid A may be adjusted using the Peltier element. Alternatively, in addition to the refrigerator and the heater, the temperature of the liquid A whose temperature is adjusted by the heater may be finally adjusted by using a Peltier element. The Peltier element may be disposed inside the holding unit 9.

  Instead of the heater, the temperature of the liquid A may be adjusted by using a heat exchange device that exchanges heat between the liquid A and a liquid having a higher temperature than the liquid A.

  The control unit 14 sets the same target temperature for the temperature adjustment unit 17 and the temperature adjustment unit 21 in advance. If the sensor 19 measures the temperature of the substrate 3 without measurement error and the sensor 23 measures the temperature of the holding unit 9 without measurement error, the true value of the temperature of the substrate 3 (the temperature of the transfer target) and the holding unit The true value of the temperature of 9 (the temperature of the mounting portion) coincides.

  However, measurement errors occur in the sensors 19 and 23 due to deterioration over time. Therefore, even if the control unit 14 sets the same target temperature for the temperature adjustment units 17 and 21, a difference occurs between the true value of the temperature of the substrate 3 and the true value of the temperature of the holding unit 9.

  Therefore, the exposure apparatus 1 periodically performs a temperature calibration operation as a method for appropriately adjusting the temperature of the substrate 3 and the temperature of the holding unit 9. In the temperature calibration operation, the control unit 14 uses the temperature adjustment unit 21 and the sensor 23 to reduce the difference between the true value of the temperature of the substrate 3 and the true value of the temperature of the holding unit 9.

(Temperature calibration method)
FIG. 3 is a flowchart showing a calibration method according to the first embodiment. The control unit 14 causes each operation to be executed according to the program shown in the flowchart. First, the temperature calibration substrate 3 is carried into the transport mechanism 12 from the outside (S1).

  Next, the transport mechanism 12 places the substrate 3 on the holding unit 9 (S2). At this time, the temperature of the holding unit 9 is measured using the sensor 23, and a measurement result indicating a temperature change with time is sent to the control unit 14 (S3). Based on the measurement result from the sensor 23, the control unit 14 determines the difference between the true value of the temperature of the substrate 3 before placement and the true value of the temperature of the holding unit 9 before placement of the substrate 3. ΔTc is calculated (S4).

  Here, a calculation process (acquisition process) of ΔTc which is temperature difference information between the substrate 3 and the holding unit 9 will be described with reference to FIG. FIG. 4 is an example of a measurement result by the sensor 23. Time t1 indicates the time when the substrate 3 is placed on the holding unit 9. A change in temperature (vertical axis) of the holding unit 9 with respect to time (horizontal axis) is shown. The temperature Wc is the temperature of the holding unit 9 measured by the sensor. The temperature W is a temperature (unknown) when the temperature of the substrate 3 is measured by the sensor 23. FIG. 4 shows a case where W> WC.

  The heat that the substrate 3 had before being placed on the holding unit 9 moves to the holding unit 9 and gradually converges to the same temperature as the temperature of the holding unit 9 (this state is shown in FIG. 4). Not appear). On the other hand, the temperature WC of the holding unit 9 is affected by the heat transmitted from the substrate 3, increases by a temperature change amount ΔT 1 with an inclination a 1 indicating the temperature change rate, and then converges to the temperature WC before placing the substrate 3. By performing heat exchange between the substrate 3 placed on the holding unit 9 and the holding unit 9, a maximum temperature difference ΔT1 occurs with respect to the temperature Wc, and the temperature gradually converges to Wc.

  The control unit 14 calculates a difference ΔTc between the true value of the temperature of the substrate 3 before being placed and the true value of the temperature of the holding unit 9. When calculating ΔTc, the slope (temperature change rate) a1 and the temperature change amount ΔT1 of the graph 40, which is information related to the temperature change with time of the holding unit 9, and the heat capacities C1, C2 and the thermal resistances Ra, Rb described above are obtained. Use.

  Returning to the description of FIG. As the changing step, the control unit 14 changes the temperature adjustment unit 21 so as to raise the target temperature by ΔTc. (S5).

  It waits until the temperature of the holding | maintenance part 9 and the board | substrate 3 is stabilized at the temperature after change (S8). After the temperature is stabilized, the controller 14 exposes the substrate 3 (S7), and the program ends. Subsequent substrates 3 are exposed without performing the steps S3 to S6 to form a latent image pattern.

  When the temperature measurement values by the sensors 19 and 23 are accompanied by measurement errors, it is difficult to obtain the true value of the temperature of the substrate 3 and the true value of the temperature of the holding unit 9. However, the difference ΔTc between the true value of the temperature of the substrate 3 and the true value of the temperature of the holding unit 9 can be reduced by reducing the difference ΔTc between the true value of the temperature of the substrate 3 and the true value of the temperature of the holding unit 9. .

  Thereby, when the board | substrate 3 is mounted in the holding part 9, it can suppress (reduce) the distortion which arises due to a temperature difference. Furthermore, by preventing the distortion of the pattern area on the substrate that cannot be corrected by the illumination optical system 5 and the projection optical system 4, it is possible to suppress (reduce) a decrease in overlay accuracy.

  The above temperature calibration method is desirably applied when the substrate 3 is attracted to the holding unit 9 like the holding unit 9 as in the present embodiment. If the holding part 9 attracts the substrate when the deformation of the substrate 3 occurs due to the temperature difference between the temperature of the substrate 3 and the holding part 9, the deformation occurs against the frictional force acting between the substrate 3 and the holding surface. As a result, the substrate 3 becomes large and easily distorted. In this embodiment, even in such a case, it is possible to suppress a decrease in overlay accuracy without decreasing the throughput after waiting for the deformation of the attracting operation of the substrate 3 to end.

  The change of the target temperature by the control unit 14 may be performed on at least one of the temperature adjustment unit 17 and the temperature adjustment unit 21, but it is preferable to change the target temperature of the temperature adjustment unit 21 as in the present embodiment. This is because when the sensor 23 is absolutely calibrated, there is a risk of particle adhesion to the holding unit 9 when the sensor used for calibration is brought into contact with the holding unit 9. It is possible to prevent particles from adhering to the holding unit 9 by calibrating the sensor 19 and changing the target temperature of the temperature adjusting unit 21.

  When the true value of the temperature of the substrate 3 is lower by ΔTc than the true value of the temperature of the holding unit 9, ΔTc is calculated in the same manner. Then, the target temperature of the holding unit 9 is lowered (changed) by ΔTc.

  Further, the control unit 14 may store in advance an inclination a1 and a temperature change amount ΔT1 corresponding to ΔTc from a temperature change when the substrate 3 having a known temperature difference ΔTc is placed on the holding unit 9. Good. Measured in advance at various temperature differences ΔTc, and stored as a table as a set with the inclination a1 and the temperature change amount ΔT1. Thereby, the calculation load and calculation time at the time of calculating unknown (DELTA) Tc can be shortened.

  When calculating ΔTc, it is preferable to consider the heat capacity of the substrate 3 placed on the holding unit 9 and the air flowing on the surface thereof by air conditioning. In addition, when not exposing the board | substrate 3 used for temperature calibration, you may carry out the board | substrate 3 in the stage which S6 finished.

  In S2, whether or not the substrate is used for temperature calibration is determined by whether or not the substrate in the same lot is the first substrate on which a pattern is formed. Alternatively, every predetermined number of lots, every elapse of a predetermined period, every time a pattern to be formed is changed (that is, every time the mold 104 is replaced), or the like.

[Second Embodiment]
(Configuration of imprint apparatus 100)
First, a second embodiment of the present invention will be described. The second embodiment is a form in which temperature calibration is performed in the imprint apparatus 100 so as to reduce the temperature difference between the mold 104 and the substrate 102. FIG. 5 is a diagram illustrating a configuration of the imprint apparatus 100 according to the present embodiment. The imprint apparatus 100 is contained in a clean chamber (not shown) in order to keep a space for forming a pattern in a clean environment.

  The imprint apparatus 100 forms an uncured resin (imprint material) 103 applied on a substrate 102 with a mold 104 and cures the resin 103 with ultraviolet rays 105 to form a transfer pattern of the mold 104. It is. The Z axis is taken in parallel with the irradiation axis (vertical axis) of the ultraviolet ray 105 incident on the substrate 102, and two axes orthogonal to each other in a plane perpendicular to the Z axis are taken as an X axis and a Y axis.

  The substrate 102 is, for example, a single crystal silicon substrate or an SOI (Silicon on Insulator) substrate. The substrate 102 has a plurality of pattern areas.

  The mold 104 has a rectangular outer peripheral shape. In addition, the surface facing the substrate 102 has a pattern portion 104a in which a concavo-convex pattern such as a circuit pattern is formed three-dimensionally. The material of the mold 104 is a material that can transmit the ultraviolet ray 105. In this embodiment, it is made of quartz.

  The mold 104 further has a circular cavity (concave portion) 104b on the surface opposite to the pattern portion 104a. The transmitting member 104 transmits the ultraviolet ray 105, and a space surrounded by the transmitting member 104 and the cavity 104b is a sealed space. When the pattern portion 104a is pressed against the resin 103, the pattern portion 104a can be deformed so as to protrude downward by adjusting the pressure of the space with a pressure adjusting device (not shown). This prevents bubbles from entering the recesses of the pattern portion 104a when the resin 103 is filled into the pattern portion 104a.

  The imprint apparatus 100 presses the pattern portion 104a once for one pattern region. That is, the size of one pattern region is a region where a transfer pattern is formed by once pressing the pattern portion 104 a against the resin 103.

  The illumination unit 107 includes a light source 107 a and an optical element 107 b that shapes the ultraviolet ray 105. The illumination unit 107 emits ultraviolet rays 105 toward the mirror 107c when the resin 103 is cured. The ultraviolet ray 105 reflected by the mirror 107c passes through the mold 104 and is irradiated to the pattern region.

  The mold holding unit 109 includes a holding unit 110 that holds the mold 104 and a drive mechanism 111 that moves the holding unit 110 together with the mold 104. The holding unit 110 attracts the incident surface (surface opposite to the pattern unit 104a) of the ultraviolet ray 105 of the mold 104 by a vacuum adsorption force or electrostatic force.

  For example, the holding unit 110 is connected to a vacuum pump (not shown) installed outside, and the attachment / detachment of the mold 104 is switched by switching ON / OFF of the negative pressure generated by the vacuum pump. Further, the mold holding unit 109 has a shape correction mechanism 112. The shape correction mechanism 112 corrects the shape of the pattern portion 104 a by applying a force in the horizontal direction from the side surface of the mold 104.

  The drive mechanism 111 moves the mold 104 along the Z-axis direction so as to selectively perform a pressing operation (imprinting) for bringing the substrate 102 and the mold 104 into contact with each other or a separating operation (release). The contact operation between the substrate 102 and the mold 104 includes a case where only the resin 103 on the substrate 102 and the mold 104 are in contact with each other. The drive mechanism 111 may be composed of a plurality of drive systems such as a coarse drive system and a fine drive system in order to position the mold 104 with high accuracy. Furthermore, not only the Z-axis direction but also a drive mechanism for moving the mold 104 in the X-axis direction, the Y-axis direction, and the rotation direction around each axis may be provided.

  The pressing or separating operation of the mold 104 against the resin 103 may be realized by moving the mold 104 in the Z-axis direction, but is realized by moving the substrate 102 in the Z-axis direction by a substrate driving mechanism 16 described later. May be. Alternatively, the mold 104 and the substrate 102 may be moved relatively.

  The substrate holding unit 113 includes a holding unit 114 that holds the substrate 102 and a driving mechanism 115 that translates the substrate 102 in the XY plane while being held by the holding unit 114. The holding unit 114 holds the substrate 102 by vacuum suction force or electrostatic force.

  The drive mechanism 115 moves the substrate 102 with respect to each axial direction. The drive mechanism 115 may also be composed of a plurality of drive systems such as a coarse drive system and a fine drive system in order to position the substrate 102 with high accuracy. Further, the drive mechanism 115 may be provided with a drive mechanism for moving not only in the X-axis direction and the Y-axis direction but also in the Z-axis direction and the rotation direction around each axis. By having such a drive mechanism, the substrate 102 can be controlled in six axial directions.

  The substrate 102 is positioned and controlled by the substrate holding unit 113 that receives a control command from the control unit 120 described later. For example, the substrate 102 positions the substrate 102 at a position where the substrate 102 is received from the transport mechanism 117, a position where the application unit 116 applies the resin 103, or a position facing the mold 104.

  The application unit 116 applies the uncured resin 103 onto the substrate 102. The application position and the application amount of the resin 103 are determined by the thickness of the pattern to be formed on the substrate 102, the density of the unevenness of the pattern portion 104a, and the like.

  Alignment measurement unit 118 (hereinafter referred to as measurement unit 118) emits light that passes through mold 104 and detects alignment marks (hereinafter referred to as marks) (not shown) formed on mold 104 and substrate 102. . The measuring unit 118 further detects the mark, and further measures the relative positional relationship between the pattern unit 104a and the pattern region in the XY plane.

  The transport mechanism 117 places the substrate 102 on the holding unit 114 via the load lock 128. The first temperature adjustment device 13 adjusts the temperature of the substrate 102 waiting at the standby position 119. The second temperature adjustment device 16 adjusts the temperature of the holding unit 114. The third temperature adjustment device 121 adjusts the temperature of the holding unit 110.

  The control unit (changing unit) 120 is configured by a computer including a CPU and a storage medium such as a ROM and a RAM, for example. The control unit 120 is connected to the illumination unit 107, the mold holding unit 109, the substrate holding unit 113, the coating unit 116, the transport mechanism 117, the measurement unit 118, and temperature control devices 13, 16, and 121, which will be described later, via a line. .

  The control unit 120 controls the operation of each of these components according to the program shown in the flowchart of FIG. 7 in the ROM in the control unit 120. As a result, the pattern forming operation (imprint process) for the pattern region is comprehensively controlled.

  The control unit 120 may be arranged in a common casing of the imprint apparatus 100 or may be arranged in a casing different from the imprint apparatus 100 as long as the above-described functions are not impaired. Also good.

  The storage medium included in the control unit 120 stores a program shown in the flowchart of FIG. The heat capacity C1 of the substrate 102, the heat capacity C2 of the holding unit 114, and the heat capacity C3 of the mold 104 are stored. Furthermore, thermal resistance Ra, thermal resistance Rb, thermal resistance Rc, and thermal resistance Rd are stored.

  The thermal resistance Ra is a resistance between the substrate 102 and the holding unit 114. The thermal resistance Rb is a resistance between the liquid A described later that adjusts the temperature of the holding unit 114. The thermal resistance Rc is a resistance between the substrate 102 and the mold 104. The thermal resistance Rd is a thermal resistance Rd resistance between the holding unit 110 and the liquid B described later that adjusts the temperature of the holding unit 110. The control unit 120 sets a target temperature for each of the first temperature adjustment device 13 and the second temperature adjustment device 16. Further, at the time of temperature calibration, the difference between the temperature of the substrate 3 that has been temperature adjusted and the true value of the temperature of the holding unit 9 and the difference between the target temperatures set in the first temperature adjustment device 13 and the second temperature adjustment device 16 are as follows. The target temperature for the second temperature adjusting device 16 is changed so as to decrease.

  The imprint apparatus 100 also includes a base surface plate 129 on which the substrate holding unit 113 is placed, a bridge surface plate 125 that fixes the mold holding unit 109, and a base surface plate 124 that extends in the vertical direction. And a support 127 for supporting the.

  Furthermore, the imprint apparatus 100 includes a mold conveyance mechanism that conveys the mold 104 from the outside of the imprint apparatus 100 to the holding unit 110.

  The configurations and functions of the first temperature adjustment device 13 and the second temperature adjustment device 16 are as described in the first embodiment. FIG. 6A is a diagram illustrating temperature adjustment of the mold 104 and the holding unit 114.

  The third temperature adjustment device 121 includes a temperature adjustment unit 122, a pipe 123, and a third sensor 124. The temperature adjustment unit 122 adjusts the temperature of the liquid B supplied from the temperature adjustment unit 122 into the holding unit 110 via the pipe 123. The temperature adjustment unit 124 includes a refrigerator (not shown) that cools the liquid B, a pump (not shown) that sends out the liquid cooled by the refrigerator, and a cooled liquid sent from the pump at a predetermined temperature (for example, 23 (0.000 ° C.). The temperature of the holding unit 110 is adjusted by adjusting the temperature of the liquid B.

  Further, the temperature adjustment unit 127 is connected to the control unit 120. The temperature adjustment unit 21 adjusts the temperature of the liquid A so that the measured value of the sensor 23 approaches the target temperature set by the control unit 14. The sensor 19 sends the measured value of the air temperature to the control unit 14.

  Note that the temperature measured by the third sensor 124 is considered to be equivalent to the temperature of the pattern unit 104a. Further, it is assumed that the temperature of the liquid B adjusted by the temperature adjusting unit 122 is adjusted uniformly in the mold 104. It is assumed that the third temperature adjustment device 122 can adjust the temperature so that the temperature indicated by the third sensor 124 matches the target temperature set by the control unit 120.

(Temperature calibration method)
Next, the temperature calibration method according to the present embodiment will be described. FIG. 7 is a flowchart showing a method for reducing the distortion of the pattern region that occurs when the substrate 102 is placed on the holding unit 114 and when the substrate 104 is brought into contact with the mold 104 via the resin 103.

  The control unit 120 changes the target temperature for the second temperature adjustment device 16 so as to reduce the difference between the true value of the temperature of the holding unit 114 and the true value of the temperature of the substrate 102 through the steps S21 to S25. The steps S21 to S26 are the same as the steps S1 to S6 in the flowchart of FIG.

  Next, the application unit 116 applies the resin 103 onto the substrate 102 (S27). The driving mechanism 115 moves the substrate 102 to a position facing the mold 104, and executes a stamping process in which the driving mechanism 111 presses the pattern portion 104a against the resin 103 (S28).

  At this time, the sensor 23 measures a temperature change occurring in the holding unit 114. The heat of the mold 104 is transmitted to the holding unit 114 via the substrate 102. A temperature change caused by the heat is measured (S29). The control unit 120 calculates the difference ΔTm between the true value of the temperature of the mold 104 and the true value of the temperature of the holding unit 114 by performing arithmetic processing in the same manner as in the first embodiment (S30). The controller 120 changes the target temperature for the third temperature adjusting device 121 by the calculated temperature difference ΔTm (S31). Finally, the substrate 102 is unloaded (S32).

  Note that the control unit 120 may correct the shape of the pattern portion 104 a using the shape correction mechanism 112 during the imprinting of the mold 104 and before the irradiation with the ultraviolet ray 105. The shape of the pattern region on the substrate 102 can be approximated.

  Thereafter, a pattern is formed on the other substrate 102 while the temperature of the holding unit 110 is adjusted at the target temperature set in S32.

  Thus, this embodiment is a form in which the temperature of the holding unit 114 and the temperature of the holding unit 110 are matched with the temperature of the substrate 102 adjusted by the first temperature adjustment device 13. According to this embodiment, it is possible to reduce the distortion of the pattern region on the substrate 102 that is caused by the temperature difference between the substrate 102 and the holding unit 114.

  Furthermore, distortion of the pattern region on the substrate 102 caused by the temperature difference between the substrate 102 and the mold 104 can be reduced. It is possible to prevent distortion that cannot be corrected by the shape correction mechanism 112 from occurring in the pattern region, and it is possible to improve the overlay accuracy as compared with the case where the present embodiment is not performed.

  In particular, the shape correction of the pattern portion 104a in the imprint apparatus 100 is difficult to perform higher-order correction than the shape correction of the projection pattern of the reticle 2 in the exposure apparatus 1 described above. Therefore, reducing the distortion of the pattern region by reducing the relative temperature difference in advance is an effective means for improving the overlay accuracy.

[Third Embodiment]
FIG. 8 is a diagram illustrating a part of the configuration of the imprint apparatus 200 according to the third embodiment. The imprint apparatus 200 is an apparatus that manufactures the mold 104 in the imprint apparatus 100 according to the second embodiment. That is, instead of forming a pattern on the substrate 102, a pattern is formed on the convex surface 130 a at the center of the replica mold (transfer object) 130 having the same outer shape as the mold 104.

  The mold 104 has a pattern portion 104a in which a concavo-convex pattern is formed at the center. After the resin 103 is supplied to the convex surface 130 a, the pattern portion 104 a is pressed against the resin 103, thereby forming a transfer pattern of the pattern portion 104 a on the convex surface 130.

  The transport mechanism 132 transports the replica mold 130 onto the holding unit 133. The first temperature adjustment device 13 adjusts the temperature of the replica mold 130 at the standby position 134. The structure of the 1st temperature control apparatus 13 is the same as that of FIG.

  The second temperature adjustment device 16 uses the sensor 23 to adjust the temperature of the holding unit 133 based on the target temperature. The third temperature adjustment device uses the third sensor 124 to adjust the temperature of the holding unit 133 based on the target temperature.

  The imprint method using the imprint apparatus 200 is substantially the same as the imprint method using the imprint apparatus 100 described above with reference to the flowchart of FIG. That is, before placing the replica mold 130 as the transfer target on the holding unit 133, the temperature is adjusted so that the difference between the true temperature of the replica mold 130 and the true temperature of the holding unit 133 is reduced. Further, before the stamping step, temperature adjustment is performed so that the difference between the true temperature of the replica mold 130 on the holding unit 133 and the true temperature of the mold 104 is small.

  In this way, it is possible to reduce the difference in true temperature between the replica mold 130 before being placed on the holding part 133 and the holding part 133 and the difference in true temperature between the replica mold 130 and the mold 130. Thereby, the movement of the heat | fever at the time of making each contact can be reduced, and an overlaying precision can be improved.

[Fourth Embodiment]
As a fourth embodiment, a temperature calibration method in the imprint system (lithography system) 1000 will be described. FIG. 9 is a diagram illustrating a configuration of four (plural) imprint apparatuses 100. Each imprint apparatus 100 has substantially the same configuration as the imprint apparatus 100 according to the second embodiment.

  FIG. 9 illustrates only the second temperature adjustment device 16 and the substrate holding unit 113 among the constituent members of each imprint apparatus. However, the transport mechanism 117 and the first temperature adjustment device 13 are not included in each of the four imprint apparatuses 100. The four imprint apparatuses 100 share one set of the transport mechanism 117 and the first temperature adjustment apparatus 13 that are disposed in the common space 140.

  A plurality of substrates 102 before pattern formation are stored in the common space 130. Using the first temperature adjustment device 13, the temperature of the plurality of substrates 102 is collectively adjusted. The transport mechanism 117 transports the substrates 102 to each imprint apparatus 100 one by one.

  The control unit 120 of each imprint apparatus 100 uses the substrate 102 carried from the transport mechanism 117, and the true value of the temperature of the substrate 102 before being placed on the holding unit 114 and the true value of the temperature of the holding unit 114. A difference ΔTc is calculated. Therefore, the control unit 120 changes the target temperature set in the second temperature adjustment device 16 so as to reduce ΔTc.

  Thereby, the distortion of the pattern area | region on the board | substrate 102 resulting from the temperature difference of the board | substrate 102 and the holding | maintenance part 114 can be reduced. It is possible to prevent distortion that cannot be corrected by the shape correction mechanism 112 from occurring in the pattern region, and it is possible to improve the overlay accuracy as compared with the case where the present embodiment is not performed.

  Therefore, it is preferable that the control unit 120 changes the target temperature for the second temperature adjustment device 16 by ΔTc. Even in the case where ΔTc has a different value due to the individual difference of the sensors 23 mounted on the respective imprint apparatuses 100, it is possible to reduce the distortion of the pattern area that may occur in each imprint apparatus 100. .

  Alternatively, the target temperature for the first temperature adjustment device 13 is changed by the average value ΔTa of ΔTc calculated by each imprint apparatus 100, and the change of the target temperature of the difference between the temperature differences ΔTc and ΔTa is changed to the second temperature adjustment. It may be set in the device 16.

  Instead of the imprint apparatus 100, the present invention may be applied to a lithography system including a plurality of exposure apparatuses 1.

[Fifth Embodiment]
In the first to fourth embodiments, the target temperatures for the first temperature adjusting device 13, the second temperature adjusting device 16, and the third temperature adjusting device 21 set before the temperature calibration are the same. In the present embodiment, a temperature difference larger than the assumed temperature differences ΔTc and ΔTm is preset as an offset value.

  The configuration of the imprint apparatus 100 according to the fifth embodiment is substantially the same as the imprint apparatus 100 described in the second embodiment. The difference is that the program shown in the flowchart of FIG. 10 is stored in the storage medium of the control unit 120. The temperature adjustment units 17, 21, and 127 perform temperature control with an error of 0.001 ° C. to 0.01 ° C. on the sensor 19, sensor 23, and third sensor 124 connected thereto.

  FIG. 10 is a flowchart showing the temperature calibration method according to the present embodiment. First, the control unit 120 sets a temperature shifted by ΔT0 with respect to the target temperature set in the first temperature adjustment device 13 in the second temperature adjustment device 16 (101). Here, ΔT0 is within 10 times (for example, 0.5 ° C. or less) with respect to the temperature difference of the expected temperature calibration. This is because the influence of the temperature control error by the second temperature adjusting device 16 can be ignored.

  When the temperature of the holding unit 114 becomes stable, the transport mechanism 117 carries in the substrate 102 used for temperature calibration and places it on the holding unit 114 (S102). The sensor 23 measures the temperature change of the holding unit 114 immediately after the substrate 102 is placed. The measurement result is sent to the control unit 120. The control unit 120 calculates a difference ΔT <b> 1 between the true value of the temperature of the substrate 102 and the true value of the temperature of the holding unit 114. Here, if the necessary temperature calibration temperature is ΔTc ′, ΔT1 = ΔT0 + ΔTc ′. Using this relationship, ΔTc ′ is calculated as a temperature calibration temperature necessary for the relationship between the holding unit 114 and the substrate 102 (S104).

  Next, the application unit 116 applies the resin 103 onto the substrate 102 in a state where the control unit 120 does not change the set temperature of the holding unit 114. A stamping process in which the pattern unit 104a is pressed against the resin 103 by the drive mechanism 111 is executed (S106).

  At this time, the sensor 23 measures a temperature change occurring in the holding unit 114. The heat of the mold 104 is transmitted to the holding unit 114 via the substrate 102. A temperature change caused by this heat is measured (S107). The control unit 120 calculates a difference ΔT2 between the true value of the temperature of the mold 104 and the true value of the temperature of the holding unit 114. Here, if a necessary temperature calibration temperature is ΔTm ′, ΔT2 = ΔT0 + ΔTm ′. Using this relationship, ΔTm ′ is calculated as a temperature calibration temperature required in the relationship between the holding unit 114 and the mold 104 (S108).

  The control unit 120 changes the target temperature for the second temperature adjustment unit so as to be shifted by ΔTc ′ compared to the target temperature for the first temperature adjustment unit (S109). The control unit 120 changes the target temperature for the third temperature adjustment unit so as to be shifted by ΔTm ′ as compared with the target temperature for the first temperature adjustment unit (S110). Finally, the transport mechanism 117 unloads the substrate 102 (S111).

  Thus, the present embodiment is a form in which the temperature of the holding unit 114 and the temperature of the holding unit 110 are matched with the temperature adjusted by the first temperature adjustment device 13. By changing the offset ΔTo first, the temperature change at the sensor 23 can be captured even when the calibration value ΔTc′ΔTm ′ is a small value.

  According to this embodiment, it is possible to reduce the distortion of the pattern region on the substrate 102 that is caused by the temperature difference between the substrate 102 and the holding unit 114. Furthermore, the distortion of the pattern area on the substrate 102 caused by the temperature difference between the substrate 102 and the mold 104 can be reduced. It is possible to prevent distortion that cannot be corrected by the shape correction mechanism 112 from occurring in the pattern region, and it is possible to improve the overlay accuracy as compared with the case where the present embodiment is not performed.

[Other Embodiments]
The temperature adjustment conditions changed by the control unit 14 and the control unit 120 are not limited to the change of the target temperature. You may change the output of a sensor so that it may output so that the temperature detection value of sensors, such as the sensor 19 and the sensor 23, may include a predetermined offset value. May be. The temperature control unit 122 and the pipe 123 may have a temperature control function using a vortex effect.

  In the third embodiment and the fifth embodiment, the temperature calibration of the holding unit 114 and the mold 104 is continuously performed using the same substrate 102, but may be performed using different substrates 102, respectively. Further, instead of changing the target temperature in the temperature adjusting unit 21, the target temperature in the temperature adjusting unit 17 may be adjusted.

  The imprint apparatus according to the second to fifth embodiments described above may be an imprint apparatus that employs a thermal curing method instead of a photocuring method. Moreover, the imprint material concerning this invention is resin hardened | cured by the various electromagnetic radiation containing light, or resin hardened | cured by heating. An imprint material corresponding to the curing method employed by the imprint apparatus is selected.

  The lithography apparatus according to the present invention is not limited to the exposure apparatus and the imprint apparatus described above. An apparatus that forms a latent image pattern on a substrate by irradiating the substrate with light rays such as g-line (wavelength 436 nm), ArF laser light (wavelength 193 nm), EUV light (wavelength 13 nm), or charged particle beams.

[Product Manufacturing Method]
A method for manufacturing an article according to an embodiment of the present invention includes a step of forming a pattern on a substrate (a wafer, a glass plate, or the like) using a lithography apparatus, and a step of processing the substrate on which the pattern has been exposed. Including. The article is, for example, a semiconductor integrated circuit element, a liquid crystal display element, an imaging element, a magnetic head, a CD-RW, an optical element, a photomask, or the like. The processing process is, for example, an etching process or an ion implantation process. Furthermore, other known processing steps (development, oxidation, film formation, vapor deposition, planarization, resist peeling, dicing, bonding, packaging, etc.) may be included.

  As mentioned above, although preferable embodiment of this invention was described, it cannot be overemphasized that this invention is not limited to these embodiment, A various deformation | transformation and change are possible within the range of the summary.

1 Imprinting device 3 Substrate (object)
8 Resin (imprint material)
9, 114 Holding part (mounting part)
13 1st temperature regulator 14 Control part (change means)
19 Sensor 21 Second temperature adjusting device 23 Sensor 104, 130 Mold (transfer body)
130 Replica mold (transfer object)
1000 Imprint System

Claims (14)

A method for adjusting the temperature of the object and the placement unit described above in a system in which an object temperature-adjusted using a first temperature adjustment device is placed on a placement unit that is temperature-adjusted using a second temperature adjustment device. And
Using the temperature measuring means used for adjusting the temperature of the mounting section, an acquisition step for acquiring information on the temperature change of the mounting section with the passage of the object,
A changing step of changing a temperature adjustment condition of at least one of the first temperature adjustment device and the second temperature adjustment device based on the information on the temperature change;
The adjustment method characterized by having. Using the object whose temperature has been adjusted using the first temperature adjusting device, a transfer pattern of the object is formed on the transfer target placed on the mounting portion whose temperature has been adjusted using the second temperature adjusting device. A method for adjusting the temperature of the object and the transfer object in a system,
Using the temperature measurement means used for temperature adjustment of the placement unit, an acquisition step of obtaining information on the temperature change of the placement unit over time accompanying the contact between the transfer object and the object;
Based on the information, a changing step of changing a temperature adjustment condition of at least one of the first temperature adjustment device and the second temperature adjustment device;
The adjustment method characterized by having. The changing step includes a step of obtaining temperature difference information indicating a temperature difference between the object and the mounting portion before placing the object on the mounting portion based on information on the temperature change,
The temperature adjustment condition of at least one of the first temperature adjustment device and the second temperature adjustment device is changed based on the temperature difference information so that the temperature difference is reduced. Item 3. The adjustment method according to Item 2.   The information on the temperature change includes a temperature change rate and a temperature change amount of the mounting portion, and the temperature change rate and the temperature change amount after the acquisition step and before the change step, based on the temperature change rate and the temperature change amount. The adjustment method according to claim 3, further comprising a step of obtaining difference information.   5. The adjusting method according to claim 1, wherein in the changing step, a temperature adjusting condition of the second temperature adjusting device is changed.   6. The adjustment according to claim 1, wherein a target temperature of the first temperature adjustment device and a target temperature of the second temperature adjustment device are equal to each other before the obtaining step. Method.   The adjustment according to any one of claims 1 to 6, wherein a target temperature of the first temperature adjusting device and a target temperature of the second temperature adjusting device are different from each other before the obtaining step. Method.   The temperature adjustment condition is a temperature target value for the object and the placement unit, or an offset value related to a temperature detection value of the object and the placement unit, according to any one of claims 1 to 7. The adjustment method according to claim 1. A lithographic apparatus for forming a pattern on a transfer object placed on a placement unit, wherein the transfer object is adjusted to a temperature before the transfer object is placed on the placement part. A temperature control device;
A second temperature adjusting device comprising a measuring means for measuring the temperature of the mounting portion, and adjusting the temperature of the mounting portion;
Based on the information about the temperature change of the temperature of the mounting portion over time according to the placement of the transferred body on the mounting portion obtained using the measuring means, the first temperature adjusting device And changing means for changing a temperature adjustment condition of at least one of the second temperature adjusting devices,
A lithographic apparatus comprising:   Based on the temperature difference information indicating the temperature difference between the transferred object before being placed on the placement portion and the placement portion, obtained using the information on the temperature change, the changing means is configured to change the temperature difference. The lithographic apparatus is characterized in that a temperature adjustment condition of at least one of the first temperature adjustment device and the second temperature adjustment device is changed so as to be small. The mounting portion includes a holding unit that attracts and holds the transferred object to the mounting portion.
The lithographic apparatus according to claim 9, wherein the pattern is formed on the transfer target held by the holding unit. An imprint apparatus for forming a pattern on the transfer body by bringing the transfer body into contact with an imprint material on the transfer body placed on the placement portion,
A first temperature adjusting device for adjusting the temperature of the transfer body before the pressing;
A second temperature adjusting device comprising a measuring means for measuring the temperature of the mounting portion, and adjusting the temperature of the mounting portion;
Changing means for changing a temperature adjusting condition of at least one of the first temperature adjusting device and the second temperature adjusting device;
The temperature of at least one of the first temperature adjusting device and the second temperature adjusting device based on the information about the temperature change of the temperature of the mounting portion with time obtained by the pressing, obtained using the measuring means. An imprint apparatus comprising: a changing unit that changes the adjustment condition. A plurality of lithography apparatuses for forming a pattern on a transfer target placed on the placement unit;
A first temperature adjustment device that adjusts the temperature of the substrate before being placed on the placement portion of the plurality of lithography apparatuses,
Each of the plurality of lithographic apparatuses includes
A second temperature adjusting device comprising a measuring means for measuring the temperature of the mounting portion, and adjusting the temperature of the mounting portion;
Based on the information about the temperature change of the temperature of the mounting portion over time according to the placement of the transfer object on the mounting portion obtained using the measuring unit, the second temperature adjusting device Changing means for changing the temperature adjustment condition of at least one of
A lithography system comprising: An apparatus or system according to any one of claims 9 to 11, an imprint apparatus according to claim 12, and an imprint system according to claim 13. Forming a pattern on the substrate;
And a step of processing the substrate on which the pattern is formed in the step.

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