JP2017065951A5 - - Google Patents
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- JP2017065951A5 JP2017065951A5 JP2015190896A JP2015190896A JP2017065951A5 JP 2017065951 A5 JP2017065951 A5 JP 2017065951A5 JP 2015190896 A JP2015190896 A JP 2015190896A JP 2015190896 A JP2015190896 A JP 2015190896A JP 2017065951 A5 JP2017065951 A5 JP 2017065951A5
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- lithium tantalate
- tantalate single
- raw material
- gallium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- JNQQEOHHHGGZCY-UHFFFAOYSA-N lithium;oxygen(2-);tantalum(5+) Chemical compound [Li+].[O-2].[O-2].[O-2].[Ta+5] JNQQEOHHHGGZCY-UHFFFAOYSA-N 0.000 claims description 10
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052733 gallium Inorganic materials 0.000 claims description 7
- 239000000843 powder Substances 0.000 claims 5
- 239000002994 raw material Substances 0.000 claims 5
- 238000004519 manufacturing process Methods 0.000 claims 3
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 claims 1
- 239000002019 doping agent Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Description
すなわち、本発明の第１の発明によれば、タンタル酸リチウム単結晶のＬｉサイト若しくはＴａサイトの一部が、ガリウム（Ｇａ）元素で置換されており、単結晶中のガリウム（Ｇａ）含有量が０．１１重量％以上、０．４重量％以下の範囲であることを特徴とするタンタル酸リチウム単結晶が提供される。 That is, according to the first invention of the present invention, a part of the Li site or Ta site of the lithium tantalate single crystal is substituted with the gallium (Ga) element, and the gallium (Ga) content in the single crystal Thus, a lithium tantalate single crystal is provided, characterized in that the range is from 0.11 wt% to 0.4 wt%.
Claims (5)
ガリウム原料粉末は、原料融液中のＧａ濃度が０．０５重量％以上、１．５重量％以下になるように添加することを特徴とする請求項１又は２に記載のタンタル酸リチウム単結晶の製造方法。 A method for producing a lithium tantalate single crystal in which a gallium raw material powder as a dopant is added to a raw material powder of a lithium tantalate single crystal and a crystal is grown by the Czochralski method,
The lithium tantalate single crystal according to claim 1 or 2, wherein the gallium raw material powder is added so that a Ga concentration in the raw material melt is 0.05 wt% or more and 1.5 wt% or less. Manufacturing method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015190896A JP6485307B2 (en) | 2015-09-29 | 2015-09-29 | Lithium tantalate single crystal and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2015190896A JP6485307B2 (en) | 2015-09-29 | 2015-09-29 | Lithium tantalate single crystal and method for producing the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017065951A JP2017065951A (en) | 2017-04-06 |
| JP2017065951A5 true JP2017065951A5 (en) | 2018-07-05 |
| JP6485307B2 JP6485307B2 (en) | 2019-03-20 |
Family
ID=58493760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015190896A Active JP6485307B2 (en) | 2015-09-29 | 2015-09-29 | Lithium tantalate single crystal and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6485307B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7417501B2 (en) | 2020-09-18 | 2024-01-18 | 信越化学工業株式会社 | Method for manufacturing oxide single crystal wafers |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000196407A (en) * | 1998-12-28 | 2000-07-14 | Tdk Corp | Surface acoustic wave device |
| JP3589064B2 (en) * | 1999-01-27 | 2004-11-17 | 日本ビクター株式会社 | Piezoelectric crystal and piezoelectric element |
| JP3893012B2 (en) * | 1999-05-22 | 2007-03-14 | 独立行政法人科学技術振興機構 | CLBO single crystal growth method |
| JP4113004B2 (en) * | 2003-02-20 | 2008-07-02 | 株式会社山寿セラミックス | Single crystal for piezoelectric substrate, surface acoustic wave filter using the same, and manufacturing method thereof |
| JP4301564B2 (en) * | 2004-04-27 | 2009-07-22 | 株式会社山寿セラミックス | Method for suppressing charge of piezoelectric oxide single crystal, and apparatus for suppressing charge |
| WO2007046176A1 (en) * | 2005-10-19 | 2007-04-26 | Yamaju Ceramics Co., Ltd. | Ferroelectric single crystal, surface acoustic filter making use of the same and process for producing the filter |
| JP4770552B2 (en) * | 2006-03-29 | 2011-09-14 | ソニー株式会社 | Method for producing lithium tantalate single crystal |
| JP2008301066A (en) * | 2007-05-30 | 2008-12-11 | Yamajiyu Ceramics:Kk | Lithium tantalate (lt) or lithium niobate (ln) single crystal compound substrate |
| JP2009007203A (en) * | 2007-06-28 | 2009-01-15 | Sumitomo Metal Mining Co Ltd | Oxide single crystal growth device and method for manufacturing oxide single crystal using the same |
| JP2010280525A (en) * | 2009-06-03 | 2010-12-16 | Sumitomo Metal Mining Co Ltd | Lithium tantalate substrate and method for producing lithium tantalate single crystal |
| JP5839577B2 (en) * | 2012-05-09 | 2016-01-06 | 信越化学工業株式会社 | Method for producing stoichiometric lithium tantalate single crystal for surface acoustic wave device |
| JP5984058B2 (en) * | 2012-09-28 | 2016-09-06 | 住友金属鉱山株式会社 | Method for producing lithium tantalate single crystal and lithium tantalate single crystal |
-
2015
- 2015-09-29 JP JP2015190896A patent/JP6485307B2/en active Active
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