JP2017050339A5 - - Google Patents

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Publication number
JP2017050339A5
JP2017050339A5 JP2015170873A JP2015170873A JP2017050339A5 JP 2017050339 A5 JP2017050339 A5 JP 2017050339A5 JP 2015170873 A JP2015170873 A JP 2015170873A JP 2015170873 A JP2015170873 A JP 2015170873A JP 2017050339 A5 JP2017050339 A5 JP 2017050339A5
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japanese patent
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japanese
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JP2015170873A
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JP6521799B2 (ja
JP2017050339A (ja
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Priority claimed from JP2015170873A external-priority patent/JP6521799B2/ja
Priority to KR1020160106916A priority patent/KR101908192B1/ko
Priority to US15/245,335 priority patent/US9892934B2/en
Publication of JP2017050339A publication Critical patent/JP2017050339A/ja
Publication of JP2017050339A5 publication Critical patent/JP2017050339A5/ja
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特開平３−０２５９３４号公報 特開平５−３２６４７７号公報 特開平１０−１８９５５４号公報
JP2015170873A 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法 Active JP6521799B2 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2015170873A JP6521799B2 (ja) 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法
KR1020160106916A KR101908192B1 (ko) 2015-08-31 2016-08-23 할로겐 제거 방법 및 반도체 장치의 제조 방법
US15/245,335 US9892934B2 (en) 2015-08-31 2016-08-24 Method for removing halogen and method for manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015170873A JP6521799B2 (ja) 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法

Publications (3)

Publication Number Publication Date
JP2017050339A JP2017050339A (ja) 2017-03-09
JP2017050339A5 true JP2017050339A5 (ja) 2018-07-26
JP6521799B2 JP6521799B2 (ja) 2019-05-29

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ID=58096652

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JP2015170873A Active JP6521799B2 (ja) 2015-08-31 2015-08-31 ハロゲン除去方法および半導体装置の製造方法

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US (1) US9892934B2 (ja)
JP (1) JP6521799B2 (ja)
KR (1) KR101908192B1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7293190B2 (ja) * 2018-03-16 2023-06-19 株式会社半導体エネルギー研究所 半導体装置
WO2022097530A1 (ja) * 2020-11-09 2022-05-12 東京エレクトロン株式会社 基板処理方法および基板処理装置

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0325934A (ja) 1989-06-23 1991-02-04 Nec Corp 固体表面に吸着したハロゲン含有層の除去方法
JPH0748482B2 (ja) * 1989-10-14 1995-05-24 大日本スクリーン製造株式会社 酸化膜等の被膜除去処理後における基板表面の洗浄方法
JPH05326477A (ja) 1992-05-26 1993-12-10 Ulvac Japan Ltd 半導体基板表面のハロゲン除去方法
JPH07321117A (ja) * 1994-05-25 1995-12-08 Toshiba Corp 半導体基板の処理方法
JP3526961B2 (ja) * 1995-05-24 2004-05-17 松下電器産業株式会社 半導体装置の製造方法
US6140243A (en) 1996-12-12 2000-10-31 Texas Instruments Incorporated Low temperature process for post-etch defluoridation of metals
JP3932636B2 (ja) * 1997-12-08 2007-06-20 ソニー株式会社 半導体装置の製造方法
JP4482217B2 (ja) * 2000-10-25 2010-06-16 ソニー株式会社 半導体装置用洗浄剤及び半導体装置の洗浄方法
JP2005026277A (ja) * 2003-06-30 2005-01-27 Sony Corp 低誘電率膜の成膜方法
US7713885B2 (en) * 2005-05-11 2010-05-11 Micron Technology, Inc. Methods of etching oxide, reducing roughness, and forming capacitor constructions
WO2006138505A1 (en) * 2005-06-16 2006-12-28 Advanced Technology Materials, Inc. Dense fluid compositions for removal of hardened photoresist, post-etch residue and/or bottom anti-reflective coating layers
JP2007220882A (ja) * 2006-02-16 2007-08-30 Fujitsu Ltd 埋込配線の形成方法
KR20080108510A (ko) * 2006-04-05 2008-12-15 아사히 가라스 가부시키가이샤 디바이스 기판의 세정 방법
JP2009010043A (ja) * 2007-06-26 2009-01-15 Tokyo Electron Ltd 基板処理方法，基板処理装置，記録媒体
US8153533B2 (en) 2008-09-24 2012-04-10 Lam Research Methods and systems for preventing feature collapse during microelectronic topography fabrication
JP5064423B2 (ja) * 2009-02-16 2012-10-31 Ｄｏｗａエレクトロニクス株式会社 銀の粒子粉末および分散液

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