JP2017034328A - Piezoelectric vibration device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric vibration device with higher reliability by being made to correspond to miniaturization.SOLUTION: A piezoelectric vibration device is provided with: a base 2 in a rectangular parallelepiped shape constituted of three or more layers of laminates consisting of a base part and a frame part; a lid 5 which airtightly seals a storage part by the frame part in a base upper layer; an external connection terminal formed on a lower surface of the base; a circular arc-shaped notched part which is formed only at four corners of an outer peripheral edge of the base, and extended along a height direction of the base; a piezoelectric vibration element 3 and an electronic component element 4 which are stored in the storage part of the base; and a piezoelectric connection terminal formed in the notched part in a base middle layer. When a radius of the notched part in the base upper layer is considered as R1, a radius of the notched part in the base middle layer is considered as R2, dimensions of four sides of the frame part in the base upper layer are formed by fixed width dimensions W, and the minimum width dimensions among four sides except the four corners of the frame part of the base upper layer are formed by W, R1<R2≤W is satisfied.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a surface mount type piezoelectric vibration device.

  As a piezoelectric vibration device, for example, a surface-mount type crystal resonator or a crystal oscillator is widely used. For example, a surface-mount type crystal oscillator has a piezoelectric vibration element made of crystal or the like and an electronic component element such as an integrated circuit element mounted in a storage portion provided in a base (package) made of an insulating material. The housing is hermetically sealed. A plurality of external connection terminals are formed on the outer bottom surface of the base. The piezoelectric vibration device is mounted on the external circuit board by being electrically and mechanically bonded to the mounting pad on the external circuit board by a conductive bonding material such as solder at the external connection terminal.

  In such a piezoelectric vibration device, as disclosed in Patent Document 1, by providing a piezoelectric connection terminal that is connected only to the piezoelectric vibration element, an electric component by other electronic component elements such as an IC is provided. In the past, there has been proposed a method for evaluating electrical characteristics and adjusting the frequency of a piezoelectric vibration element as a single unit without being affected by the characteristics.

Utility Kaihei 5-65110

  However, in the piezoelectric vibration device as described above, with the recent progress of downsizing of the package, it is difficult to secure the storage space of the package storage unit and the mechanical strength of the package. In particular, in a base composed mainly of a package and made of a laminate of ceramic materials, the outer dimensions of the base and the volume of the base storage part are determined by the width of the frame part around the base inner bottom part. The mechanical strength to ensure the impact and airtightness of the material is greatly affected. In addition, in the configuration in which the piezoelectric connection terminal is separately formed in a place other than the external connection terminal formed on the bottom surface of the base, the piezoelectric connection terminal is formed in any region on the side surface of the base, and thus the piezoelectric connection terminal is formed. The shape of the bank is subject to shape restrictions. At present, such problems are becoming more and more difficult as the piezoelectric vibration device is reduced in size.

  The present invention has been made in view of such a point, and an object of the present invention is to provide a more reliable piezoelectric vibration device capable of constituting a piezoelectric connection terminal while corresponding to the downsizing of a package. is there.

  In order to achieve the above object, the present invention is a rectangular parallelepiped comprising a laminate of a substrate portion and a frame portion made of a ceramic material, and forming an exterior portion and a storage portion by a laminate of at least three layers of an upper layer, a middle layer and a lower layer. A base having a shape, a lid which is bonded to the upper surface of the frame portion of the upper layer of the base and hermetically seals the storage portion by the frame portion of the upper layer of the base, an external connection terminal formed on the lower surface of the lower layer of the base and connected to the outside; An arc-shaped cutout formed only at the four corners of the outer periphery of the base upper layer, the base middle layer, and the base lower layer and extending along the height direction of the base, and a piezoelectric housed in the base housing portion A vibration element, an electronic component element, and a piezoelectric connection terminal formed at a notch portion of the base middle layer and electrically connected only to the piezoelectric vibration element, and a radius of the notch portion of the base upper layer being R1 age, Serial-based middle of the radius of the notch and R2, the case of forming the minimum width dimension of the four sides excluding the four corners of the base layer of the frame part in W, the R1 <R2 ≦ W.

  According to the above invention, the notch for forming the piezoelectric connection terminal capable of measuring only the characteristics of the piezoelectric vibration element is configured only at the four corners where the width of the frame of the base laminate is wide and the mechanical strength is relatively strong. doing. For this reason, it is not necessary to form notches in the four side portions of the frame portion of the laminated body, which has a relatively weak mechanical strength and is likely to affect the narrowing of the storage portion of the base.

  In particular, since the piezoelectric connection terminal is formed only in the cutout portion of the base middle layer, the shape of the sealing portion or the like by forming the cutout portion in which the piezoelectric connection terminal is formed on the frame portion of the base upper layer No specific restrictions.

  Further, the radius of the notch portion of the base upper layer is R1, the radius of the notch portion of the base middle layer is R2, and the minimum width dimension of the four sides excluding the four corners of the frame portion of the base upper layer is W In this case, the dimensions are configured so as to establish a magnitude relationship, and R1 <R2 ≦ W. By establishing such a magnitude relationship, even if notches are formed at the four corners of the outer periphery including the frame portion of the base upper layer, the notches having a radius necessary for functioning as piezoelectric connection terminals can be obtained. Can be secured. In addition, the width dimension of the four corners of the frame portion of the base upper layer is not extremely narrowed with respect to the width dimension of the four sides of the frame portion of the base upper layer. That is, the mechanical strength in the four corner regions of the base upper frame is not lowered, and the four corner regions for joining the lid are not narrowed.

  In particular, the radius R1 of the notch portion of the base upper layer is set to the radius R1 of the notch portion of the base upper layer and the radius R1 of the notch portion of the base middle layer is equal to the radius R2 of the notch portion of the base upper layer. By making the diameter smaller than the radius R2, the formation position of the metallizing pattern for sealing on the upper surface of the base upper layer can be extended to the four corners of the base. For this reason, since the joining area | region for joining a lid | cover can be expanded, an airtight sealing property can be improved.

  Further, the radius R2 of the notch portion of the base middle layer is set to be equal to the notch portion of the base upper layer as compared to the case where the radius R1 of the notch portion of the base upper layer and the radius R2 of the notch portion of the base middle layer are equal. By making the diameter larger than the radius R1, the terminals of the inspection probe and the measuring jig can be more easily brought into contact with the piezoelectric connection terminals.

  Further, in the above configuration, the long side dimension of the base in plan view outer dimension is 1.6 mm or less, the short side dimension is 1.2 mm or less, and the radius R2 dimension of the notch portion of the base middle layer is set as follows. A piezoelectric vibration device characterized by being 0.085 mm or more and 0.2 mm or less.

  In this case, in addition to the above-described effects, in the piezoelectric vibration device miniaturized to 1.6 mm × 1.2 mm or less, it is difficult to secure the width dimension of the frame portion while securing the necessary storage capacity. Thus, a notch for reliably contacting the terminals of the inspection probe and the measurement jig with the piezoelectric connection terminal can be obtained without degrading the mechanical strength and hermetic sealing performance of the base.

  As described above, it is possible to provide a more reliable piezoelectric vibration device capable of configuring a more reliable piezoelectric connection terminal while corresponding to downsizing of the package.

It is sectional drawing which shows schematic structure of the crystal oscillator which concerns on embodiment of this invention. It is a bottom view of FIG. It is a top view before putting the lid | cover of FIG. It is a top view of only the base of FIG. It is the figure which expanded the dotted-line part of the square shape of FIG. It is sectional drawing which shows schematic structure of the crystal oscillator which concerns on other embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiments of the present invention to be described below, as a piezoelectric vibration device, for example, a surface-mount crystal oscillator incorporating an IC (electronic component element) having an oscillation circuit will be described as an example.

  An embodiment of the present invention will be described with reference to FIGS. The crystal oscillator 1 is a substantially rectangular parallelepiped package, and has a substantially rectangular shape in plan view and a concave shape in cross section. The crystal oscillator 1 includes a base 2, a crystal resonator element (piezoelectric resonator element) 3, an IC 4, and a lid 5 as main constituent members.

  In the present embodiment, for example, the external size of the crystal oscillator 1 in plan view (outside dimension of the base 2 in plan view) is about 1.6 mm (long side) × 1.2 mm (short side) (type A). The vertical and horizontal dimensions are about 1.2 mm (long side) × 1 mm (short side) (type B), and the crystal oscillator 1 includes an IC 4 having an oscillation circuit as an electronic component element. Note that the external size of the above-described crystal oscillator in plan view is an example, and the present invention can be applied to package sizes other than the external size. Hereinafter, the outline of each member constituting the crystal oscillator 1 will be described in detail.

  The base 2 is composed of a laminate of a substantially rectangular substrate portion and a frame portion having a long side and a short side made of a ceramic material, and is housed in the exterior portion 2b by a laminate of at least three layers of an upper layer, a middle layer, and a lower layer. It is a rectangular parallelepiped container which forms the part 2a.

  In the present embodiment, the base 2 has a flat plate-like (substantially rectangular in plan view) substrate portion 20 as a lower layer of the base, and an outer peripheral edge 210 extending upward along the outer peripheral portion 200 of the one main surface 201 of the substrate portion 20. The inner peripheral edge 211 is formed in a substantially rectangular shape in plan view and forms a base middle layer. The first frame part 21 extends upward along the outer peripheral part 200 of the first frame part 21, and the outer peripheral edge 220 and the inner peripheral edge 221 are viewed in plan view. The second frame portion 22 (frame portion) which is formed in a substantially rectangular shape and serves as an upper layer of the base has a three-layer configuration including main constituent members (concave concave shape).

  And by combining the inner bottom surface by the one main surface 201 of these substrate portions 20, the inner space inside the inner periphery of the first frame portion 21, and the inner space inside the inner periphery of the second frame portion, A base storage portion 2a is configured.

  Inside the base 2, a lower surface is formed with a first frame portion 21, and a first storage portion 21a for storing an IC 4 described later is formed. The first storage portion 21a protrudes upward from the bottom surface of the first storage portion, and will be described later. A holding base 21b that holds the end of the crystal resonator element 3 and a pillow part 21d that is positioned to face the holding base via the first storage part are formed. In addition, a second storage portion 22a constituted by the second frame portion 22 is formed above the first storage portion 21a.

  Outside the base 2, the substrate portion 20, the first frame portion 21, and the second frame portion 22 are each formed in a rectangular shape whose outer peripheral edges are substantially the same in plan view, and the height of the base is only at the four corners of each outer peripheral edge. Arc-shaped notches 20c, 21c, and 22c extending along the vertical direction are formed. Among these, as shown in FIGS. 1 and 2, the second frame portion 22 is an arc-shaped notch portion having a radius R1, and the substrate portion 20 and the first frame portion 21 are arc-shaped cut portions having the same radius R2. Consists of notches.

  That is, arc-shaped notches 22c (22c1, 22c2, 22c3, 22c4) having a radius R1 are formed at the four corners of the outer peripheral edge of the second frame portion 22, and the four corners of the outer peripheral edge of the first frame portion 21 are formed. Are formed with arc-shaped notches 21c (21c1, 21c2, 21c3, 21c4) having a radius R2, and arc-shaped notches 20c (20c1, 20c2, 20c2) having a radius R2 at the four corners of the outer periphery of the substrate portion 20. 20c3, 20c4) are formed.

  The cutout portions 20c1, 20c2, 20c3, and 20c4 of the substrate portion 20, the cutout portions 21c1, 21c2, 21c3, and 21c4 of the first frame portion 21, and the cutout portions 22c1, 22c2, and 22c3 of the second frame portion 22. , 22c4 are overlapped when stacked as will be described later, thereby forming an integrated notch portion of the base 2.

  At this time, the relationship between the radius R1 of the cutout portion of the second frame portion 22 and the radius R2 of the cutout portion of the substrate portion 20 and the first frame portion 21 is configured to satisfy R1 <R2. As an example of this embodiment, type A has a radius R1 of 0.1 mm, radius R2 of 0.12 mm, type B has a radius R1 of 0.085 mm, and radius R2 of 0.12 mm.

  As shown in FIGS. 3 and 4, arc-shaped inner notches 22 d having a radius R <b> 3 are formed at the four corners of the inner peripheral edge of the second frame portion 22. In other words, at the four corners of the inner peripheral edge of the second frame portion 22, an arc-shaped inner side with a radius R3 that extends along the height direction of the inner peripheral wall of the second frame portion 22 (through the second frame portion 22). Cutout portions 22d (22d1, 22d2, 22d3, 22d4) are formed.

  At this time, the radius R3 of the inner notch 22d of the second frame 22, the radius R1 of the notch of the second frame 22, the radius R2 of the notch of the substrate 20 and the first frame 21, and The relationship may be such that R1 <R2 <R3. As an example of this embodiment, type A has a radius R3 of 0.15 mm.

  As shown in FIGS. 4 and 5, the dimensions of the four sides excluding the four corners of the outer peripheral edge and the inner peripheral edge of the second frame portion 22 are formed with a constant width dimension W. Of these, the minimum width is formed as W. At this time, the relationship between the width dimension W of the second frame part 22, the radius R1 of the notch part of the second frame part 22, and the radius R2 of the notch part of the substrate part 20 and the first frame part 21 is R1. <R2 ≦ W is satisfied. As an example of this embodiment, type A has a width dimension W of 0.15 mm, and type B has a width dimension W of 0.12 mm. That is, type A has a relationship of “R1 (0.1 mm) <R2 (0.12 mm) <W (0.15 mm)”, and type B has a relationship of “R1 (0.085 mm) <R2 (0.12 mm) = It is set so as to satisfy the relationship of “W (0.12 mm)”.

  With these configurations, even if the widths of the first frame portion 21 and the second frame portion 22 are reduced due to miniaturization, the outer cutout portions 20c, 21c, 22c, and the inner cutouts are provided only at the four corners where there is a margin in width. By forming the notch 22d, the mechanical strength of the entire base is not weakened. Further, by reducing the radius R1 of the notch portion of the second frame portion 22 relative to the minimum width dimension W of the second frame portion 22, the balance between the side width of the frame portion and the width of the four corners is maintained, And the area | region of the four corners of the frame part which forms the radius R1 of the notch part of the 2nd frame part 22 can also be given a clearance. As a result, since the sealing region between the second frame portion 22 and the lid 5 is not narrowed more than necessary, the hermetic sealing performance of the crystal resonator element 2 is not deteriorated. In addition, by increasing the radius R2 of the notch portion of the first frame portion 21 relative to the radius R1 of the notch portion of the second frame portion 22, the first frame portion can be obtained without reducing the area of the sealing region. Only the dimension of the notch can be designed larger.

  Further, in this embodiment, the width dimension of the second frame portion 22 is set to W having a constant width without distinguishing between the short side and the long side, and the width dimension of the sealing region obtained by the second frame portion is made uniform. The outer peripheral strength of the second frame can be made uniform.

  4 and 5, the radius R3 of the inner notch 22d of the second frame part 22, the radius R2 of the notch of the substrate part 20 and the first frame part 21, and the second frame part. The relationship between the radius R1 of the notch portion 22 and the width dimension W of the second frame portion 22 may be configured such that R1 <R2 <R3 ≦ W. In the type A of this embodiment, the relationship is “R1 (0.1 mm) <R2 (0.12 mm) R3 (0.15 mm) = W (0.15 mm)”.

  For this reason, by making the width dimension W of the four sides of the second frame portion 22 equal to or greater than the radius R3 of the inner notch portion 22d of the second frame portion 22, the side width and the four corners of the frame portion are increased. In addition, the four corner regions of the frame portion forming the radius R1 of the cutout portion of the second frame portion 22 can be provided with a balance.

  As shown in FIG. 2, an insulating region Z in which the base portion of the base adjacent to the notches 20c1, 20c2, 20c3, and 20c4 at the four corners is exposed is interposed on the lower surface of the substrate 20 that is the lower layer of the base 2. In addition, external connection terminals GT1, GT2, GT3, and GT4 for connecting to the outside are formed in proximity to the notches 20c1, 20c2, 20c3, and 20c4 at the four corners.

  As shown in FIG. 4, a plurality of wiring patterns H <b> 21 to H <b> 26 connected to the integrated circuit element 2 to be described later are formed on the upper surface of the substrate unit 20 (the inner bottom surface of the first storage unit 21 a), which is the lower layer of the base 2. It is formed side by side. Of these wiring patterns, H21 to H24 are electrically led to the external connection terminals GT1, GT2, GT3, and GT4, respectively, through conductive vias V (not shown) that penetrate through the lower portion.

  A holding base 21b on which a crystal resonator element 3 to be described later is mounted is formed on the upper surface of the first frame portion 21 that is the middle layer of the base 2 (the bottom surface of the second storage portion 22a). Second wiring patterns H27 and H28 connected to the crystal resonator element 3 are formed. The holding base 21b is configured such that a part of the first frame portion 21 protrudes toward the storage portion 2a (first storage portion 21a). These second wiring patterns H27 and H28 are electrically led out to the wiring patterns H25 and H26 through conductive vias V penetratingly connected to the lower part.

  Among the cutout portions at the four corners of the outer peripheral edge of the first frame portion 21 that is the middle layer of the base 2, the piezoelectric portion that is electrically connected only to the crystal resonator element 3 described later is provided above the cutout portions 21 c 1 and 21 c 2. Connection terminals AT1 and AT2 are formed. The piezoelectric connection terminal AT1 is electrically derived from the second wiring pattern H27, and the piezoelectric connection terminal AT2 is electrically derived from the second wiring pattern H28. For this reason, it is possible to measure the characteristics of the crystal resonator element 3 described later by bringing the contact probe of the piezoelectric resonator element characteristic device into contact with the piezoelectric connection terminals AT1 and AT2.

  In the case where the outer size of the base 2 in plan view is reduced to 1.6 mm × 1.2 mm or less, the radius R2 of the notch portion of the first frame portion 21 in which the piezoelectric connection terminals AT1 and AT2 are formed. Is preferably set to 0.085 mm to 0.2 mm. This is a dimension range in which the mechanical strength of the base is not lowered while the inspection probe, the terminal of the measuring jig, and the like are brought into contact smoothly and reliably. In other words, if it is smaller than 0.085 mm, it is difficult to make contact with the terminal, and if it is larger than 0.2 mm, the width of the four corners of the first frame portion 21 becomes smaller, the mechanical strength tends to be weakened, and airtightness is secured. It becomes difficult. In addition, the radius R1 of the notch portion of the second frame portion 22 is formed to have a size of 0.05 mm or more, thereby suppressing the stress at the corner portion of the base and reducing the stress at the time of joining with the lid. This is a desirable configuration. Further, in the case where the outer size of the base 2 in a plan view is reduced to 1.6 mm × 1.2 mm or less, the minimum width dimension W of the four sides of the second frame portion 22 is sufficient to secure the capacity of the storage portion. In consideration of the surface, the surface for securing the mechanical strength, the surface for securing the sealing region, etc., it is desirable to set the thickness to 0.085 mm to 0.2 mm.

  The piezoelectric connection terminals AT1 and AT2 are formed only on the upper surfaces of the cutout portions 21c1 and 21c2 of the first frame portion 21 which is the middle layer of the base 2, and the lower layer of the base 2 adjacent to the cutout portions in the vertical direction. The upper surface of the notch portions 20c1 and 20c2 of the substrate portion 20 and the upper surface of the notch portions 22c1 and 22c2 of the second frame portion 22 which is the upper layer of the base 2 are configured so as not to be formed.

  On the upper surface of the second frame portion 22 that is an upper layer of the base 2, a sealing portion 222 for joining a lid 5 described later is formed. In this embodiment, the sealing portion 222 is configured by metallization, and the sealing portion 222 and the lid 5 described later are joined by a joining material such as a metal brazing material.

  Each of the substrate part 20, the first frame part 21, and the second frame part 22 configured as described above is a ceramic green sheet (alumina). Each of the external connection terminals GT1 to GT4, the wiring patterns H21 to H26, the second wiring patterns H27 and H28, the piezoelectric connection terminals AT1 and AT2, and the sealing portion 222 is a nickel plating layer on the upper surface of the metallized layer made of tungsten or molybdenum. In this configuration, each of the gold plating layers is formed. The base 2 is configured by integrally forming these three sheets by firing in a stacked state.

  Each of these sheets (substrate section sheet, first frame section sheet, second frame section sheet) is divided not only into a single layer but also into a plurality of layers according to the extension form of the internal wiring between the layers. May be formed. More specifically, one or more sheets corresponding to other frame members may be added between the first frame portion 21 and the second frame portion 22 to constitute a base composed of a laminate of four or more layers. .

  The IC 4 mounted on the inner bottom surface of the first storage portion 21a is a one-chip integrated circuit element incorporating an inverter amplifier (oscillation amplifier) such as a C-MOS. Configure. A plurality of pads are formed on the bottom side of the IC 4. In the IC 4, a plurality of pads of the IC 2 and the wiring patterns H 21 to H 26 formed on the base 2 are connected by, for example, FCB through metal bumps C such as gold. In this embodiment, a configuration in which metal bumps are joined is used as an example, but metal wire bumps may be used.

  The IC 4 used in this embodiment is not limited to a so-called SPXO IC that includes only an oscillation circuit unit that amplifies the frequency signal of the crystal resonator element 3, but also a so-called VCXO IC that includes a frequency adjustment circuit as an additional function. It may be an IC, or a so-called TCXO IC having a temperature compensation function or the like as an additional function. Further, an IC in which these are combined may be used. The IC 4 may be bipolar other than CMOS, bi-CMOS, or the like.

  Above the IC 4, the crystal resonator element 3 is mounted at a predetermined interval in the second storage portion 22 a that is the same space of the storage portion 2 a. The quartz resonator element 3 is, for example, a rectangular AT-cut quartz diaphragm, and excitation electrodes and extraction electrodes are formed on the front and back surfaces thereof. These electrodes are, for example, a three-layer laminated thin film composed of a chromium or nickel base electrode layer, a silver or gold intermediate electrode layer, and a chromium or nickel upper electrode layer, or a chromium or nickel base electrode It is a two-layer laminated thin film composed of a layer and a silver or gold upper electrode layer. Each of these electrodes can be formed by a thin film forming means such as a vacuum deposition method or a sputtering method.

  The crystal resonator element 3 and the base 2 are joined using, for example, a silicone-based conductive resin adhesive (conductive bonding material) S that is in the form of a paste and contains fine metal pieces such as silver filler. As shown in FIG. 1, the conductive resin adhesive S is applied to a part of the upper surface of the second wiring patterns H27 and H28, and the conductive resin adhesive S is applied to the crystal vibrating element 3 and the holding base. By interposing and hardening between 21b, it mutually joins electromechanically. As described above, one end of the crystal resonator element 3 is joined to the holding base 21b of the base while the opposite end of the crystal resonator element 3 is joined to the base holding base 21b while providing a gap from the bottom surface of the first storage portion 21a of the base 2. Held. In this embodiment, the structure bonded by a silicone-based conductive resin adhesive is used as an example. However, as this conductive bonding material, other conductive resin adhesives, bump materials such as metal bumps and metal plating bumps, brazing A material may be used.

  The lid 5 for hermetically sealing the base 2 has a configuration in which a metal brazing material (sealing material) is formed on a core material made of, for example, Kovar. The bonding material 51 made of the metal brazing material is bonded to the sealing portion 222 of the base 2. The external shape of the metal lid 5 in plan view is substantially the same as or slightly smaller than that of the ceramic base.

  The sealing part 222 of the base 2 in which the IC 4 and the crystal resonator element 3 are stored in the storage part 2 a is covered with a metal lid 5, and the bonding material 51 of the metal lid 5 and the base sealing part 222 are covered. The surface-mount type crystal oscillator 1 is completed by melting and curing and sealing hermetically.

  The surface-mount type crystal oscillator 1 configured as described above is bonded to a wiring pattern of a circuit board (not shown) using a bonding material such as solder.

  In the embodiment of the present invention, a base having a concave cross section in which a frame portion is formed only on one main surface side (upper side) of the substrate portion 20 is described as an example. However, as shown in FIG. A cross section in which an upper frame portion 25 and a lower frame portion 26 are formed on both the main surface side (upper side) and the other main surface side (lower side) of the substrate portion 23 (base middle layer 1) and the substrate portion 24 (base middle layer 2). You may apply to the thing of a substantially H-type base. In FIG. 6, the radius R1 of the arc-shaped cutout portion 25c of the upper frame portion 25 and the radius of the arc-shaped cutout portions (23c, 24c, 26c) of the other (substrate portions 23, 24, lower frame portion 26). All of R2 have the same diameter. The piezoelectric connection terminals AT1 and AT2 are formed in the notches 23c and 24c of the substrate portions 23 and 24, respectively.

  According to the surface-mounted crystal oscillator 1 according to the embodiment of the present invention, the cutout portions 21c1 and 21c2 for forming the piezoelectric connection terminals AT1 and AT2 capable of measuring the characteristics of only the crystal resonator element 3 are used as the frame of the laminated body. Since it is composed of only four corners with a wide width and relatively strong mechanical strength, it is relatively weak in mechanical strength and can be easily affected by narrowing the storage part of the base. There is no need to form a notch. In addition, since the dimensions of the four side portions of the second frame portion 22 are all formed with the same W dimension, the outer periphery of the second frame portion 22 constituting a part of the exterior portion of the base 2 has the same strength. And each side has no weak mechanical strength.

  In particular, since the piezoelectric connection terminals AT1 and AT2 are formed only in the notches 21c1 and 21c2 of the first frame portion 21 of the base middle layer, the piezoelectric connection terminals are formed with respect to the second frame portion 22 of the base upper layer. No shape limitation is imposed by forming the notch. In addition, the radius of the notches 22c1, 22c2, 22c3, and 22c4 of the second frame portion 22 of the base upper layer is R1, and the radius of the notches 21c1, 21c2, 21c3, and 21c4 of the first frame portion 21 of the base middle layer is When the dimensions of the four sides excluding the four corners of the outer peripheral edge and the inner peripheral edge of the second frame portion 22 of the base upper layer are formed with a constant width dimension W, the magnitude relationship is established between these dimensions. In the configuration, R1 <R2 ≦ W. By establishing such a magnitude relationship, even if the notches 20c, 21c, and 22c are formed at the four corners of the outer periphery including the second frame portion 22 of the base upper layer, the piezoelectric connecting terminals AT1 and AT2 can be functioned. Therefore, it is possible to secure a notch portion having a radius required for the purpose. In addition, the width dimension of the four corners of the second frame portion 22 of the base upper layer is not extremely narrowed with respect to the width dimension of the four sides of the second frame portion 22 of the base upper layer. That is, the mechanical strength in the four corner regions of the second frame portion 22 of the base upper layer is not lowered, and the four corner regions of the sealing portion 221 for joining the lid 5 are not narrowed.

  In particular, the radius R1 of the notches 22c1, 22c2, 22c3, and 22c4 of the second frame portion 22 of the base upper layer and the radius R2 of the notches 21c1, 21c2, 21c3, and 21c4 of the first frame portion 21 of the base middle layer are the same diameter. Compared with the case of FIG. 5, the radius R1 of the notch portion of the base upper layer is made smaller than the radius R2 of the notch portion of the base middle layer, so that the sealing portion 221 is formed on the upper surface of the second frame portion 22 of the base upper layer. Can be formed to extend to the corners of the base 4. For this reason, since the joining area | region for joining the lid | cover 5 can be expanded, an airtight sealing property can be improved. Furthermore, by making the radius R2 of the notch portion of the base middle layer larger than the radius R1 of the notch portion of the base upper layer, the terminals of the inspection probe and the measuring jig can be more easily brought into contact with the piezoelectric connection terminal.

  As described above, it is possible to provide the crystal oscillator 1 with higher reliability that can configure the piezoelectric connection terminals AT1 and AT2 with higher reliability while accommodating the downsizing of the package.

In the above-described embodiment, the AT-cut quartz crystal vibrating plate is used as the piezoelectric vibrating element. However, the present invention is not limited to this, and a tuning-fork type quartz vibrating piece may be used. Further, although quartz is used as the piezoelectric vibration element, the present invention is not limited to this, and a piezoelectric single crystal material such as piezoelectric ceramics or LiNbO ₃ may be used. That is, any piezoelectric vibration element can be applied. In addition, although the example in which the piezoelectric vibration element is cantilevered is taken as an example, a configuration in which both ends of the piezoelectric vibration element are retained may be employed.

  In the above-described embodiment of the present invention, a crystal oscillator (piezoelectric oscillator) using an IC as an electronic component element is taken as an example, but a function using a temperature sensitive element such as a thermistor or a diode or other functional electronic component element is used. The present invention is also applicable to a crystal resonator (piezoelectric resonator) with parts.

  In this embodiment, sealing with a metal brazing material is taken as an example. However, the present invention is not limited to this, and seam sealing, beam sealing (for example, laser beam, electron beam), glass sealing, etc. Can be applied.

  The present invention can be implemented in various other forms without departing from the spirit or main features thereof. Therefore, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

  It can be applied to mass production of piezoelectric vibration devices.

1 Crystal oscillator (piezoelectric vibration device)
2 Base 3 Crystal oscillator (piezoelectric oscillator)
4 IC
5 Lid C Metal bump S Conductive resin adhesive

Claims (2)

A rectangular parallelepiped base comprising a laminate of a substrate part and a frame part made of a ceramic material, and forming an exterior part and a storage part by a laminate of at least three layers of an upper layer, a middle layer and a lower layer,
A lid which is bonded to the upper surface of the frame portion of the base upper layer and hermetically seals the storage portion by the frame portion of the base upper layer;
Formed on the lower surface of the base lower layer, external connection terminals for connecting to the outside,
An arc-shaped notch formed only at the four corners of the outer periphery of the base upper layer, the base middle layer, and the base lower layer, and extending along the height direction of the base;
Piezoelectric vibration element and electronic component element housed in the base housing part,
A piezoelectric connection terminal formed in the notch portion of the base middle layer and electrically connected only to the piezoelectric vibration element;
With
The radius of the notch in the base upper layer is R1,
The radius of the notch in the base middle layer is R2,
When the minimum width dimension of the four sides excluding the four corners of the frame portion of the base upper layer is W,
A piezoelectric vibration device, wherein R1 <R2 ≦ W. The piezoelectric vibration device according to claim 1,
Of the outer dimensions of the base in plan view, the long side dimension is 1.6 mm or less, the short side dimension is 1.2 mm or less, and the radius R2 of the notch portion of the base middle layer is 0.085 mm or more and 0. A piezoelectric vibration device characterized by being 2 mm or less.

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