JP2017034328A - Piezoelectric vibration device - Google Patents

Piezoelectric vibration device Download PDF

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JP2017034328A
JP2017034328A JP2015149241A JP2015149241A JP2017034328A JP 2017034328 A JP2017034328 A JP 2017034328A JP 2015149241 A JP2015149241 A JP 2015149241A JP 2015149241 A JP2015149241 A JP 2015149241A JP 2017034328 A JP2017034328 A JP 2017034328A
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JP6604071B2 (en
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啓弘 金澤
Takahiro Kanazawa
啓弘 金澤
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Daishinku Corp
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Abstract

PROBLEM TO BE SOLVED: To provide a piezoelectric vibration device with higher reliability by being made to correspond to miniaturization.SOLUTION: A piezoelectric vibration device is provided with: a base 2 in a rectangular parallelepiped shape constituted of three or more layers of laminates consisting of a base part and a frame part; a lid 5 which airtightly seals a storage part by the frame part in a base upper layer; an external connection terminal formed on a lower surface of the base; a circular arc-shaped notched part which is formed only at four corners of an outer peripheral edge of the base, and extended along a height direction of the base; a piezoelectric vibration element 3 and an electronic component element 4 which are stored in the storage part of the base; and a piezoelectric connection terminal formed in the notched part in a base middle layer. When a radius of the notched part in the base upper layer is considered as R1, a radius of the notched part in the base middle layer is considered as R2, dimensions of four sides of the frame part in the base upper layer are formed by fixed width dimensions W, and the minimum width dimensions among four sides except the four corners of the frame part of the base upper layer are formed by W, R1<R2≤W is satisfied.SELECTED DRAWING: Figure 1

Description

本発明は表面実装型の圧電振動デバイスに関する。   The present invention relates to a surface mount type piezoelectric vibration device.

圧電振動デバイスとして、例えば表面実装型の水晶振動子や水晶発振器が広く用いられている。例えば表面実装型の水晶発振器は、絶縁性材料からなるベース(パッケージ)に設けられた収納部の中に、水晶などからなる圧電振動素子と集積回路素子などの電子部品素子が実装され、蓋で収納部を気密封止した構造となっている。前記ベースの外底面には複数の外部接続端子が形成されている。圧電振動デバイスは、外部接続端子で外部回路基板上の搭載パッドとはんだなどの導電性接合材により電気的機械的に接合されることで外部回路基板に搭載される。   As a piezoelectric vibration device, for example, a surface-mount type crystal resonator or a crystal oscillator is widely used. For example, a surface-mount type crystal oscillator has a piezoelectric vibration element made of crystal or the like and an electronic component element such as an integrated circuit element mounted in a storage portion provided in a base (package) made of an insulating material. The housing is hermetically sealed. A plurality of external connection terminals are formed on the outer bottom surface of the base. The piezoelectric vibration device is mounted on the external circuit board by being electrically and mechanically bonded to the mounting pad on the external circuit board by a conductive bonding material such as solder at the external connection terminal.

このような圧電振動デバイスの中には、特許文献1に開示されているように、圧電振動素子とのみ接続された圧電接続端子を設けることで、ICなどの他の電子部品素子による電気的な特性に影響されることなく、圧電振動素子の単体としての電気的特性の評価や周波数調整を実施するものが従来から提案されている。   In such a piezoelectric vibration device, as disclosed in Patent Document 1, by providing a piezoelectric connection terminal that is connected only to the piezoelectric vibration element, an electric component by other electronic component elements such as an IC is provided. In the past, there has been proposed a method for evaluating electrical characteristics and adjusting the frequency of a piezoelectric vibration element as a single unit without being affected by the characteristics.

実開平5−65110号Utility Kaihei 5-65110

しかしながら、上述のような圧電振動デバイスは、近年のパッケージの小型化の進展とともに、パッケージ収納部の収納スペースの確保とパッケージの機械的な強度の確保が難しくなってきているのが現状である。特に、パッケージの主体となりセラミック材料の積層体により構成するベースでは、ベース内底部分の周囲にある枠部の幅により、ベースの外形寸法とベースの収納部の容積が決定されるとともに、外部からの衝撃や気密性を確保するための機械的な強度にも大きく影響する。加えて、ベース底面に形成された外部接続端子以外の場所に圧電接続端子を別途形成する構成では、ベースの側面のいずれかの領域に圧電接続端子が形成されるため、圧電接続端子が形成される堤部分に形状的な制限を受けやすくなる。このような問題点は、圧電振動デバイスの小型化とともにますます困難になっているのが現状である。   However, in the piezoelectric vibration device as described above, with the recent progress of downsizing of the package, it is difficult to secure the storage space of the package storage unit and the mechanical strength of the package. In particular, in a base composed mainly of a package and made of a laminate of ceramic materials, the outer dimensions of the base and the volume of the base storage part are determined by the width of the frame part around the base inner bottom part. The mechanical strength to ensure the impact and airtightness of the material is greatly affected. In addition, in the configuration in which the piezoelectric connection terminal is separately formed in a place other than the external connection terminal formed on the bottom surface of the base, the piezoelectric connection terminal is formed in any region on the side surface of the base, and thus the piezoelectric connection terminal is formed. The shape of the bank is subject to shape restrictions. At present, such problems are becoming more and more difficult as the piezoelectric vibration device is reduced in size.

本発明は、かかる点に鑑みてなされたものであり、パッケージの小型化に対応させながら圧電接続端子を構成することができるより信頼性の高い圧電振動デバイスを提供することを目的とするものである。   The present invention has been made in view of such a point, and an object of the present invention is to provide a more reliable piezoelectric vibration device capable of constituting a piezoelectric connection terminal while corresponding to the downsizing of a package. is there.

上記目的を達成するために本発明は、セラミック材料からなる基板部と枠部の積層体で構成され、上層と中層と下層の少なくとも3層以上の積層体により外装部と収納部を形成する直方体形状のベース、上記ベース上層の枠部上面に接合され、上記ベース上層の枠部による収納部を気密封止する蓋、上記ベース下層の下面に形成され、外部と接続するための外部接続端子、上記ベース上層と上記ベース中層と上記ベース下層との外周縁の4隅にのみ形成され、ベースの高さ方向に沿って伸長した円弧状の切欠き部、上記ベースの収納部に収納される圧電振動素子と電子部品素子、上記ベース中層の切欠き部に形成され、上記圧電振動素子とのみ電気的に接続される圧電接続端子、を備えており、上記ベース上層の切欠き部の半径をR1とし、上記ベース中層の切欠き部の半径をR2とし、上記ベース上層の枠部の4隅を除いた4辺のうちの最小幅寸法をWで形成した場合、R1<R2≦Wとなる。   In order to achieve the above object, the present invention is a rectangular parallelepiped comprising a laminate of a substrate portion and a frame portion made of a ceramic material, and forming an exterior portion and a storage portion by a laminate of at least three layers of an upper layer, a middle layer and a lower layer. A base having a shape, a lid which is bonded to the upper surface of the frame portion of the upper layer of the base and hermetically seals the storage portion by the frame portion of the upper layer of the base, an external connection terminal formed on the lower surface of the lower layer of the base and connected to the outside; An arc-shaped cutout formed only at the four corners of the outer periphery of the base upper layer, the base middle layer, and the base lower layer and extending along the height direction of the base, and a piezoelectric housed in the base housing portion A vibration element, an electronic component element, and a piezoelectric connection terminal formed at a notch portion of the base middle layer and electrically connected only to the piezoelectric vibration element, and a radius of the notch portion of the base upper layer being R1 age, Serial-based middle of the radius of the notch and R2, the case of forming the minimum width dimension of the four sides excluding the four corners of the base layer of the frame part in W, the R1 <R2 ≦ W.

上記発明によれば、圧電振動素子のみの特性を計測できる圧電接続端子を形成するための切欠き部をベースの積層体の枠部の幅が広く機械的強度の比較的強い4隅にのみ構成している。このため、機械的強度の比較的弱く、ベースの収納部を狭めること影響しやすい積層体の枠部の4辺部分に切欠き部を構成する必要がない。   According to the above invention, the notch for forming the piezoelectric connection terminal capable of measuring only the characteristics of the piezoelectric vibration element is configured only at the four corners where the width of the frame of the base laminate is wide and the mechanical strength is relatively strong. doing. For this reason, it is not necessary to form notches in the four side portions of the frame portion of the laminated body, which has a relatively weak mechanical strength and is likely to affect the narrowing of the storage portion of the base.

特に、上記圧電接続端子をベース中層の切欠き部にのみ形成しているので、ベース上層の枠部に対して圧電接続端子が形成された切欠き部を形成することによる封止部などの形状的な制限を与えない。   In particular, since the piezoelectric connection terminal is formed only in the cutout portion of the base middle layer, the shape of the sealing portion or the like by forming the cutout portion in which the piezoelectric connection terminal is formed on the frame portion of the base upper layer No specific restrictions.

また、上記ベース上層の切欠き部の半径をR1とし、上記ベース中層の切欠き部の半径をR2とし、上記ベース上層の枠部の4隅を除いた4辺のうちの最小幅寸法をWで形成した場合、これらの寸法に大小関係を成立するように構成しR1<R2≦Wとしている。このような大小関係を成立させることで、ベース上層の枠部を含めて外周縁の4隅に切欠き部を形成しても、圧電接続端子として機能させるために必要な半径の切欠き部を確保することができる。加えて、ベース上層の枠部の4隅の幅寸法をベース上層の枠部の4辺の幅寸法に対して極端に狭められることがない。つまり、ベース上層の枠部の4隅の領域における機械的な強度を低下させることもなく、蓋を接合するための4隅の領域を狭めることもなくなる。   Further, the radius of the notch portion of the base upper layer is R1, the radius of the notch portion of the base middle layer is R2, and the minimum width dimension of the four sides excluding the four corners of the frame portion of the base upper layer is W In this case, the dimensions are configured so as to establish a magnitude relationship, and R1 <R2 ≦ W. By establishing such a magnitude relationship, even if notches are formed at the four corners of the outer periphery including the frame portion of the base upper layer, the notches having a radius necessary for functioning as piezoelectric connection terminals can be obtained. Can be secured. In addition, the width dimension of the four corners of the frame portion of the base upper layer is not extremely narrowed with respect to the width dimension of the four sides of the frame portion of the base upper layer. That is, the mechanical strength in the four corner regions of the base upper frame is not lowered, and the four corner regions for joining the lid are not narrowed.

特に、上記ベース上層の切欠き部の半径R1と上記ベース中層の切欠き部の半径R2が同径の場合に比べて、上記ベース上層の切欠き部の半径R1を上記ベース中層の切欠き部の半径R2より小径化することで、ベース上層の上面の封止用メタライズパターンの形成位置をベース4隅に延出して形成することができる。このため、蓋を接合するための接合領域を拡大できるので、気密封止性を高めることができる。   In particular, the radius R1 of the notch portion of the base upper layer is set to the radius R1 of the notch portion of the base upper layer and the radius R1 of the notch portion of the base middle layer is equal to the radius R2 of the notch portion of the base upper layer. By making the diameter smaller than the radius R2, the formation position of the metallizing pattern for sealing on the upper surface of the base upper layer can be extended to the four corners of the base. For this reason, since the joining area | region for joining a lid | cover can be expanded, an airtight sealing property can be improved.

さらに、上記ベース上層の切欠き部の半径R1と上記ベース中層の切欠き部の半径R2が同径の場合に比べて、上記ベース中層の切欠き部の半径R2を上記ベース上層の切欠き部の半径R1より大径化することで、検査プローブや測定用治具の端子を圧電接続端子により一層接触させやすくできる。   Further, the radius R2 of the notch portion of the base middle layer is set to be equal to the notch portion of the base upper layer as compared to the case where the radius R1 of the notch portion of the base upper layer and the radius R2 of the notch portion of the base middle layer are equal. By making the diameter larger than the radius R1, the terminals of the inspection probe and the measuring jig can be more easily brought into contact with the piezoelectric connection terminals.

また、上記構成において、ベースの平面視外形寸法のうち長辺の寸法が1.6mm以下で短辺の寸法が1.2mm以下であり、かつ上記ベース中層の切欠き部の半径R2の寸法を0.085mm以上0.2mm以下としたことを特徴とする圧電振動デバイス。   Further, in the above configuration, the long side dimension of the base in plan view outer dimension is 1.6 mm or less, the short side dimension is 1.2 mm or less, and the radius R2 dimension of the notch portion of the base middle layer is set as follows. A piezoelectric vibration device characterized by being 0.085 mm or more and 0.2 mm or less.

この場合、上述の作用効果に加えて、1.6mm×1.2mm以下に小型化された圧電振動デバイスでは、必要な収納部の容量を確保しながら枠部の幅寸法を確保することが困難となっており、ベースの機械的強度と気密封止性を低下させることなく、検査プローブや測定用治具の端子を圧電接続端子に確実に接触させる切欠き部が得られる。   In this case, in addition to the above-described effects, in the piezoelectric vibration device miniaturized to 1.6 mm × 1.2 mm or less, it is difficult to secure the width dimension of the frame portion while securing the necessary storage capacity. Thus, a notch for reliably contacting the terminals of the inspection probe and the measurement jig with the piezoelectric connection terminal can be obtained without degrading the mechanical strength and hermetic sealing performance of the base.

以上のように、パッケージの小型化に対応させながらより信頼性の高い圧電接続端子を構成することができるより信頼性の高い圧電振動デバイスを提供することができる。   As described above, it is possible to provide a more reliable piezoelectric vibration device capable of configuring a more reliable piezoelectric connection terminal while corresponding to downsizing of the package.

本発明の実施形態に係る水晶発振器の概略構成を示す断面図である。It is sectional drawing which shows schematic structure of the crystal oscillator which concerns on embodiment of this invention. 図1の底面図である。It is a bottom view of FIG. 図1の蓋をする前の平面図である。It is a top view before putting the lid | cover of FIG. 図1のベースのみの平面図である。It is a top view of only the base of FIG. 図4の方形状の点線部分を拡大した図である。It is the figure which expanded the dotted-line part of the square shape of FIG. 本発明の他の実施形態に係る水晶発振器の概略構成を示す断面図である。It is sectional drawing which shows schematic structure of the crystal oscillator which concerns on other embodiment of this invention.

以下、本発明の実施形態について図面を参照しながら説明する。以下に述べる本発明の実施形態において、圧電振動デバイスとして、例えば発振回路を有するIC(電子部品素子)を内蔵した表面実装型水晶発振器を例に挙げて説明する。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the embodiments of the present invention to be described below, as a piezoelectric vibration device, for example, a surface-mount crystal oscillator incorporating an IC (electronic component element) having an oscillation circuit will be described as an example.

本発明の実施形態を図1乃至5を用いて説明する。水晶発振器1は略直方体状のパッケージであり、平面視では略矩形、断面では凹形状となっている。水晶発振器1は、ベース2と、水晶振動素子(圧電振動素子)3と、IC4と、蓋5とが主な構成部材となっている。   An embodiment of the present invention will be described with reference to FIGS. The crystal oscillator 1 is a substantially rectangular parallelepiped package, and has a substantially rectangular shape in plan view and a concave shape in cross section. The crystal oscillator 1 includes a base 2, a crystal resonator element (piezoelectric resonator element) 3, an IC 4, and a lid 5 as main constituent members.

本実施形態では、例えば水晶発振器1の平面視の外形サイズ(ベース2の平面視外形寸法)は縦横が約1.6mm(長辺)×1.2mm(短辺)のもの(タイプA)と、縦横が約1.2mm(長辺)×1mm(短辺)のもの(タイプB)となっており、水晶発振器1は電子部品素子として発振回路を有するIC4を内蔵している。なお、前述の水晶発振器の平面視外形サイズは一例であり、前記外形サイズ以外のパッケージサイズであっても本発明は適用可能である。以下、水晶発振器1を構成する各部材の概略について詳述する。   In the present embodiment, for example, the external size of the crystal oscillator 1 in plan view (outside dimension of the base 2 in plan view) is about 1.6 mm (long side) × 1.2 mm (short side) (type A). The vertical and horizontal dimensions are about 1.2 mm (long side) × 1 mm (short side) (type B), and the crystal oscillator 1 includes an IC 4 having an oscillation circuit as an electronic component element. Note that the external size of the above-described crystal oscillator in plan view is an example, and the present invention can be applied to package sizes other than the external size. Hereinafter, the outline of each member constituting the crystal oscillator 1 will be described in detail.

ベース2はセラミック材料からなる長辺と短辺を有する平面視略矩形の基板部と枠部の積層体で構成され、上層と中層と下層の少なくとも3層以上の積層体により外装部2bと収納部2aを形成する直方体形状の容器である。   The base 2 is composed of a laminate of a substantially rectangular substrate portion and a frame portion having a long side and a short side made of a ceramic material, and is housed in the exterior portion 2b by a laminate of at least three layers of an upper layer, a middle layer, and a lower layer. It is a rectangular parallelepiped container which forms the part 2a.

本実施形態では、ベース2は、ベース下層となる平板状(平面視略矩形)の基板部20と、当該基板部20の一主面201の外周部200に沿って上方に伸び外周縁210と内周縁211とが平面視略矩形で形成されベース中層となる第1枠部21と、当該第1枠部21の外周部200に沿って上方に伸び外周縁220と内周縁221とが平面視略矩形で形成されベース上層となる第2枠部22(枠部)とが主な構成部材(断面凹形状)との3層構成となっている。   In the present embodiment, the base 2 has a flat plate-like (substantially rectangular in plan view) substrate portion 20 as a lower layer of the base, and an outer peripheral edge 210 extending upward along the outer peripheral portion 200 of the one main surface 201 of the substrate portion 20. The inner peripheral edge 211 is formed in a substantially rectangular shape in plan view and forms a base middle layer. The first frame part 21 extends upward along the outer peripheral part 200 of the first frame part 21, and the outer peripheral edge 220 and the inner peripheral edge 221 are viewed in plan view. The second frame portion 22 (frame portion) which is formed in a substantially rectangular shape and serves as an upper layer of the base has a three-layer configuration including main constituent members (concave concave shape).

そして、これらの基板部20の一主面201による内底面と、第1枠部21の内周縁より内側の内部空間と、第2枠部の内周縁より内側の内部空間とを組み合わせることで、ベースの収納部2aが構成されている。   And by combining the inner bottom surface by the one main surface 201 of these substrate portions 20, the inner space inside the inner periphery of the first frame portion 21, and the inner space inside the inner periphery of the second frame portion, A base storage portion 2a is configured.

ベース2の内部では、下方面には第1枠部21により構成され、後述するIC4を収納する第1の収納部21aが形成され、当該第1の収納部の底面から上部に突き出し、後述する水晶振動素子3の端部を保持する保持台21bと、前記第1の収納部を介して前記保持台と対向位置する枕部21dが形成されている。また、第1の収納部21aの上方には第2枠部22により構成された第2の収納部22aが形成されている。   Inside the base 2, a lower surface is formed with a first frame portion 21, and a first storage portion 21a for storing an IC 4 described later is formed. The first storage portion 21a protrudes upward from the bottom surface of the first storage portion, and will be described later. A holding base 21b that holds the end of the crystal resonator element 3 and a pillow part 21d that is positioned to face the holding base via the first storage part are formed. In addition, a second storage portion 22a constituted by the second frame portion 22 is formed above the first storage portion 21a.

ベース2の外部では、基板部20と第1枠部21と第2枠部22とは、各外周縁が平面視略同一の矩形で形成され、かつ各外周縁の4隅にのみベースの高さ方向に沿って伸長した円弧状の切欠き部20cと21cと22cが形成されている。このうち、図1,図2に示すように、第2枠部22は半径R1の円弧状の切欠き部で、基板部20と第1枠部21とは同一の半径R2の円弧状の切欠き部で構成している。   Outside the base 2, the substrate portion 20, the first frame portion 21, and the second frame portion 22 are each formed in a rectangular shape whose outer peripheral edges are substantially the same in plan view, and the height of the base is only at the four corners of each outer peripheral edge. Arc-shaped notches 20c, 21c, and 22c extending along the vertical direction are formed. Among these, as shown in FIGS. 1 and 2, the second frame portion 22 is an arc-shaped notch portion having a radius R1, and the substrate portion 20 and the first frame portion 21 are arc-shaped cut portions having the same radius R2. Consists of notches.

つまり、第2枠部22の外周縁の4隅には半径R1の円弧状の切欠き部22c(22c1,22c2,22c3,22c4)が形成され、第1枠部21の外周縁の4隅には半径R2の円弧状の切欠き部21c(21c1,21c2,21c3,21c4)が形成され、基板部20の外周縁の4隅には半径R2の円弧状の切欠き部20c(20c1,20c2,20c3,20c4)が形成されている。   That is, arc-shaped notches 22c (22c1, 22c2, 22c3, 22c4) having a radius R1 are formed at the four corners of the outer peripheral edge of the second frame portion 22, and the four corners of the outer peripheral edge of the first frame portion 21 are formed. Are formed with arc-shaped notches 21c (21c1, 21c2, 21c3, 21c4) having a radius R2, and arc-shaped notches 20c (20c1, 20c2, 20c2) having a radius R2 at the four corners of the outer periphery of the substrate portion 20. 20c3, 20c4) are formed.

これらの基板部20の切欠き部20c1,20c2,20c3,20c4と、第1枠部21の切欠き部21c1,21c2,21c3,21c4と、第2枠部22の切欠き部22c1,22c2,22c3,22c4とは、後述するように積層された際に重畳されることで、ベース2の一体化された切欠き部を構成する。   The cutout portions 20c1, 20c2, 20c3, and 20c4 of the substrate portion 20, the cutout portions 21c1, 21c2, 21c3, and 21c4 of the first frame portion 21, and the cutout portions 22c1, 22c2, and 22c3 of the second frame portion 22. , 22c4 are overlapped when stacked as will be described later, thereby forming an integrated notch portion of the base 2.

このとき、第2枠部22の切欠き部の半径R1と基板部20と第1枠部21の切欠き部の半径R2との関係は、R1<R2となるように構成している。本形態の一例としては、タイプAが半径R1を0.1mmとし、半径R2を0.12mm、タイプBが半径R1を0.085mmとし、半径R2を0.12mmとしている。   At this time, the relationship between the radius R1 of the cutout portion of the second frame portion 22 and the radius R2 of the cutout portion of the substrate portion 20 and the first frame portion 21 is configured to satisfy R1 <R2. As an example of this embodiment, type A has a radius R1 of 0.1 mm, radius R2 of 0.12 mm, type B has a radius R1 of 0.085 mm, and radius R2 of 0.12 mm.

また、図3,図4に示すように、第2枠部22の内周縁の4隅には、半径R3の円弧状の内側切欠き部22dが形成されている。つまり、第2枠部22の内周縁の4隅には、第2枠部22の内周壁の高さ方向に沿って伸長(第2枠部22を貫通する)する半径R3の円弧状の内側切欠き部22d(22d1,22d2,22d3,22d4)が形成されている。   As shown in FIGS. 3 and 4, arc-shaped inner notches 22 d having a radius R <b> 3 are formed at the four corners of the inner peripheral edge of the second frame portion 22. In other words, at the four corners of the inner peripheral edge of the second frame portion 22, an arc-shaped inner side with a radius R3 that extends along the height direction of the inner peripheral wall of the second frame portion 22 (through the second frame portion 22). Cutout portions 22d (22d1, 22d2, 22d3, 22d4) are formed.

このとき、第2枠部22の内側切欠き部22dの半径R3と、第2枠部22の切欠き部の半径R1と、基板部20と第1枠部21の切欠き部の半径R2との関係は、R1<R2<R3となるように構成してもよい。本形態の一例として、タイプAでは半径R3を0.15mmとしている。   At this time, the radius R3 of the inner notch 22d of the second frame 22, the radius R1 of the notch of the second frame 22, the radius R2 of the notch of the substrate 20 and the first frame 21, and The relationship may be such that R1 <R2 <R3. As an example of this embodiment, type A has a radius R3 of 0.15 mm.

また、図4,図5に示すように、第2枠部22の外周縁と内周縁との4隅を除いた4辺の寸法が一定の幅寸法Wで形成されているため、4辺のうちの最小幅寸法もWとして形成している。このとき、第2枠部22の幅寸法Wと、第2枠部22の切欠き部の半径R1と、基板部20と第1枠部21の切欠き部の半径R2との関係は、R1<R2≦Wとなるように構成している。本形態の一例としては、タイプAが幅寸法Wを0.15mmとし、タイプBが幅寸法Wを0.12mmとしている。つまり、タイプAが「R1(0.1mm)<R2(0.12mm)<W(0.15mm)」の関係になり、タイプBが「R1(0.085mm)<R2(0.12mm)=W(0.12mm)」の関係を満たすように設定されている。   As shown in FIGS. 4 and 5, the dimensions of the four sides excluding the four corners of the outer peripheral edge and the inner peripheral edge of the second frame portion 22 are formed with a constant width dimension W. Of these, the minimum width is formed as W. At this time, the relationship between the width dimension W of the second frame part 22, the radius R1 of the notch part of the second frame part 22, and the radius R2 of the notch part of the substrate part 20 and the first frame part 21 is R1. <R2 ≦ W is satisfied. As an example of this embodiment, type A has a width dimension W of 0.15 mm, and type B has a width dimension W of 0.12 mm. That is, type A has a relationship of “R1 (0.1 mm) <R2 (0.12 mm) <W (0.15 mm)”, and type B has a relationship of “R1 (0.085 mm) <R2 (0.12 mm) = It is set so as to satisfy the relationship of “W (0.12 mm)”.

これらの構成により、小型化対応により第1枠部21と第2枠部22の幅が縮小されたとしても、幅に余裕のある4隅にのみ外側切欠き部20cと21cと22cと内側切欠き部22dとを形成することで、ベース全体としての機械的な強度を弱めることがない。また、第2枠部22の最小幅寸法Wに対して、第2枠部22の切欠き部の半径R1を小さくすることで、枠部の辺幅と4隅の幅のバランスが保たれ、かつ第2枠部22の切欠き部の半径R1を形成する枠部の四隅の領域もゆとりをもたせることができる。結果として、第2枠部22と蓋5との封止領域も必要以上に狭めることもなくなるので、水晶振動素子2の気密封止性能を低下させることもない。加えて、第2枠部22の切欠き部の半径R1に対して、第1枠部21の切欠き部の半径R2を大きくすることで、封止領域の面積を狭めることなく第1枠部の切欠き部の寸法のみをより大きく設計することができる。   With these configurations, even if the widths of the first frame portion 21 and the second frame portion 22 are reduced due to miniaturization, the outer cutout portions 20c, 21c, 22c, and the inner cutouts are provided only at the four corners where there is a margin in width. By forming the notch 22d, the mechanical strength of the entire base is not weakened. Further, by reducing the radius R1 of the notch portion of the second frame portion 22 relative to the minimum width dimension W of the second frame portion 22, the balance between the side width of the frame portion and the width of the four corners is maintained, And the area | region of the four corners of the frame part which forms the radius R1 of the notch part of the 2nd frame part 22 can also be given a clearance. As a result, since the sealing region between the second frame portion 22 and the lid 5 is not narrowed more than necessary, the hermetic sealing performance of the crystal resonator element 2 is not deteriorated. In addition, by increasing the radius R2 of the notch portion of the first frame portion 21 relative to the radius R1 of the notch portion of the second frame portion 22, the first frame portion can be obtained without reducing the area of the sealing region. Only the dimension of the notch can be designed larger.

また、本形態では、第2枠部22の幅寸法を短辺側と長辺側で区別することなく一定幅のWとしており、第2枠部によって得られる封止領域の幅寸法の均一化と第2枠部の外周強度の均一化が行える。   Further, in this embodiment, the width dimension of the second frame portion 22 is set to W having a constant width without distinguishing between the short side and the long side, and the width dimension of the sealing region obtained by the second frame portion is made uniform. The outer peripheral strength of the second frame can be made uniform.

また、図4,図5に示すように、第2枠部22の内側切欠き部22dの半径R3と、基板部20と第1枠部21の切欠き部の半径R2と、第2枠部22の切欠き部の半径R1と、第2枠部22の幅寸法Wとの関係は、R1<R2<R3≦Wとなるように構成してもよい。本形態のタイプAでは、「R1(0.1mm)<R2(0.12mm)R3(0.15mm)=W(0.15mm)」の関係としている。   4 and 5, the radius R3 of the inner notch 22d of the second frame part 22, the radius R2 of the notch of the substrate part 20 and the first frame part 21, and the second frame part. The relationship between the radius R1 of the notch portion 22 and the width dimension W of the second frame portion 22 may be configured such that R1 <R2 <R3 ≦ W. In the type A of this embodiment, the relationship is “R1 (0.1 mm) <R2 (0.12 mm) R3 (0.15 mm) = W (0.15 mm)”.

このため、第2枠部22の内側切欠き部22dの半径R3に対して、第2枠部22の4辺の幅寸法Wを同寸法以上にすることで、枠部の辺幅と4隅の幅のバランスが保たれ、かつ第2枠部22の切欠き部の半径R1を形成する枠部の四隅の領域もゆとりをもたせることができる。   For this reason, by making the width dimension W of the four sides of the second frame portion 22 equal to or greater than the radius R3 of the inner notch portion 22d of the second frame portion 22, the side width and the four corners of the frame portion are increased. In addition, the four corner regions of the frame portion forming the radius R1 of the cutout portion of the second frame portion 22 can be provided with a balance.

ベース2の下層である基板部20の下面には、図2に示すように、4隅の切欠き部20c1,20c2,20c3,20c4に隣接するベースの素地部が露出する絶縁領域Zを介在するとともに、4隅の切欠き部20c1,20c2,20c3,20c4に近接して外部と接続するための外部接続端子GT1,GT2,GT3,GT4が形成されている。   As shown in FIG. 2, an insulating region Z in which the base portion of the base adjacent to the notches 20c1, 20c2, 20c3, and 20c4 at the four corners is exposed is interposed on the lower surface of the substrate 20 that is the lower layer of the base 2. In addition, external connection terminals GT1, GT2, GT3, and GT4 for connecting to the outside are formed in proximity to the notches 20c1, 20c2, 20c3, and 20c4 at the four corners.

ベース2の下層である基板部20の上面(第1の収納部21aの内底面)には、図4に示すように、後述する集積回路素子2と接続される複数の配線パターンH21〜H26が並んで形成されている。この配線パターンのうちH21〜H24は、下部に貫通接続する図示しない導電ビアVを介して、各々が外部接続端子GT1,GT2,GT3,GT4に電気的に導出されている。   As shown in FIG. 4, a plurality of wiring patterns H <b> 21 to H <b> 26 connected to the integrated circuit element 2 to be described later are formed on the upper surface of the substrate unit 20 (the inner bottom surface of the first storage unit 21 a), which is the lower layer of the base 2. It is formed side by side. Of these wiring patterns, H21 to H24 are electrically led to the external connection terminals GT1, GT2, GT3, and GT4, respectively, through conductive vias V (not shown) that penetrate through the lower portion.

ベース2の中層である第1枠部21の上面(第2の収納部22aの底面)には、後述する水晶振動素子3を搭載する保持台21bが形成されており、その上面には後述する水晶振動素子3と接続される第2の配線パターンH27,H28とが形成されている。保持台21bは第1枠部21の一部が収納部2a(第1の収納部21a)の方に突出することで構成されている。これら第2の配線パターンH27,H28は、下部に貫通接続する導電ビアVを介して、配線パターンH25,H26に電気的に導出されている。   A holding base 21b on which a crystal resonator element 3 to be described later is mounted is formed on the upper surface of the first frame portion 21 that is the middle layer of the base 2 (the bottom surface of the second storage portion 22a). Second wiring patterns H27 and H28 connected to the crystal resonator element 3 are formed. The holding base 21b is configured such that a part of the first frame portion 21 protrudes toward the storage portion 2a (first storage portion 21a). These second wiring patterns H27 and H28 are electrically led out to the wiring patterns H25 and H26 through conductive vias V penetratingly connected to the lower part.

ベース2の中層である第1枠部21の外周縁の4隅の切欠き部のうち、切欠き部21c1,21c2の上部には、後述する水晶振動素子3とのみ電気的に接続される圧電接続端子AT1,AT2が形成されている。圧電接続端子AT1は第2の配線パターンH27から電気的に導出されており、圧電接続端子AT2は第2の配線パターンH28から電気的に導出されている。このため、圧電接続端子AT1,AT2に対して、圧電振動素子特性装置のコンタクトプローブを接触することで後述する水晶振動素子3単独の特性を測定することができる。   Among the cutout portions at the four corners of the outer peripheral edge of the first frame portion 21 that is the middle layer of the base 2, the piezoelectric portion that is electrically connected only to the crystal resonator element 3 described later is provided above the cutout portions 21 c 1 and 21 c 2. Connection terminals AT1 and AT2 are formed. The piezoelectric connection terminal AT1 is electrically derived from the second wiring pattern H27, and the piezoelectric connection terminal AT2 is electrically derived from the second wiring pattern H28. For this reason, it is possible to measure the characteristics of the crystal resonator element 3 described later by bringing the contact probe of the piezoelectric resonator element characteristic device into contact with the piezoelectric connection terminals AT1 and AT2.

なお、ベース2の平面視の外形サイズが1.6mm×1.2mm以下に小型化されたものにおいては、圧電接続端子AT1,AT2が形成される第1枠部21の切欠き部の半径R2は、0.085mm〜0.2mmに設定することが望ましい。これは、検査プローブや測定用治具の端子などをスムーズかつ確実に接触させながら、ベースの機械的強度を低下させない寸法範囲となる。つまり、0.085mmより小さいと上記端子とのコンタクトが取れにくくなり、0.2mmより大きいと第1枠部21の4隅の幅が小さくなり機械的強度が弱くなりやすく、気密性も確保しにくくなる。また、第2枠部22の切欠き部の半径R1については、0.05mm以上の大きさで形成することで、ベースのコーナー部におけるかけの抑制や蓋との接合時の応力を緩和の面で望ましい構成となる。また、ベース2の平面視の外形サイズが1.6mm×1.2mm以下の小型化されたものにおいては、第2枠部22の4辺の最小幅寸法Wについては、収納部の容積確保の面と機械的強度確保の面、封止領域確保の面などを考慮して、0.085mm〜0.2mmに設定することが望ましい。   In the case where the outer size of the base 2 in plan view is reduced to 1.6 mm × 1.2 mm or less, the radius R2 of the notch portion of the first frame portion 21 in which the piezoelectric connection terminals AT1 and AT2 are formed. Is preferably set to 0.085 mm to 0.2 mm. This is a dimension range in which the mechanical strength of the base is not lowered while the inspection probe, the terminal of the measuring jig, and the like are brought into contact smoothly and reliably. In other words, if it is smaller than 0.085 mm, it is difficult to make contact with the terminal, and if it is larger than 0.2 mm, the width of the four corners of the first frame portion 21 becomes smaller, the mechanical strength tends to be weakened, and airtightness is secured. It becomes difficult. In addition, the radius R1 of the notch portion of the second frame portion 22 is formed to have a size of 0.05 mm or more, thereby suppressing the stress at the corner portion of the base and reducing the stress at the time of joining with the lid. This is a desirable configuration. Further, in the case where the outer size of the base 2 in a plan view is reduced to 1.6 mm × 1.2 mm or less, the minimum width dimension W of the four sides of the second frame portion 22 is sufficient to secure the capacity of the storage portion. In consideration of the surface, the surface for securing the mechanical strength, the surface for securing the sealing region, etc., it is desirable to set the thickness to 0.085 mm to 0.2 mm.

なお、圧電接続端子AT1,AT2は、ベース2の中層である第1枠部21の切欠き部21c1,21c2の上面にのみ形成されており、この切欠き部に上下に隣接するベース2の下層である基板部20の切欠き部20c1,20c2の上面とベース2の上層である第2枠部22の切欠き部22c1,22c2の上面には形成されないように構成している。   The piezoelectric connection terminals AT1 and AT2 are formed only on the upper surfaces of the cutout portions 21c1 and 21c2 of the first frame portion 21 which is the middle layer of the base 2, and the lower layer of the base 2 adjacent to the cutout portions in the vertical direction. The upper surface of the notch portions 20c1 and 20c2 of the substrate portion 20 and the upper surface of the notch portions 22c1 and 22c2 of the second frame portion 22 which is the upper layer of the base 2 are configured so as not to be formed.

ベース2の上層である第2枠部22の上面には、後述する蓋5を接合するための封止部222が形成されている。本形態では封止部222をメタライズにより構成しており、この封止部222と後述する蓋5とは金属ろう材など接合材によって接合される。   On the upper surface of the second frame portion 22 that is an upper layer of the base 2, a sealing portion 222 for joining a lid 5 described later is formed. In this embodiment, the sealing portion 222 is configured by metallization, and the sealing portion 222 and the lid 5 described later are joined by a joining material such as a metal brazing material.

以上のように構成された基板部20と第1枠部21と第2枠部22の各々は、セラミックグリーンシート(アルミナ)となっている。外部接続端子GT1〜GT4、配線パターンH21〜H26、第2の配線パターンH27,H28、圧電接続端子AT1,AT2、封止部222の各々は、タングステンあるいはモリブデン等によるメタライズ層の上面にニッケルメッキ層、金メッキ層の各層が形成された構成である。これら3つのシートが積層された状態で焼成によって一体成形されることで、ベース2を構成している。   Each of the substrate part 20, the first frame part 21, and the second frame part 22 configured as described above is a ceramic green sheet (alumina). Each of the external connection terminals GT1 to GT4, the wiring patterns H21 to H26, the second wiring patterns H27 and H28, the piezoelectric connection terminals AT1 and AT2, and the sealing portion 222 is a nickel plating layer on the upper surface of the metallized layer made of tungsten or molybdenum. In this configuration, each of the gold plating layers is formed. The base 2 is configured by integrally forming these three sheets by firing in a stacked state.

なお、これらの各シート(基板部のシート・第1枠部のシート・第2枠部のシート)については、積層間の内部配線の延出形態に応じて単層だけでなく複数層に分けて形成してもよい。より具体的には、第1枠部21と第2枠部22の間に他の枠体に相当するシートを1層以上追加し、4層以上の積層体からなるベースとして構成してもよい。   Each of these sheets (substrate section sheet, first frame section sheet, second frame section sheet) is divided not only into a single layer but also into a plurality of layers according to the extension form of the internal wiring between the layers. May be formed. More specifically, one or more sheets corresponding to other frame members may be added between the first frame portion 21 and the second frame portion 22 to constitute a base composed of a laminate of four or more layers. .

第1の収納部21aの内底面に搭載されるIC4は、C−MOSなどのインバータ増幅器(発振用増幅器)を内蔵したワンチップの集積回路素子であり、後述する水晶振動素子3とともに発振回路を構成する。IC4の底面側には複数のパッドが形成されている。IC4は、例えば金などの金属バンプCを介して、IC2の複数のパッドとベース2に形成された配線パターンH21〜H26とを例えばFCBにより接続される。本形態では、金属バンプにより接合した構成を例にしているが、金属ワイヤバンプを用いてもよい。   The IC 4 mounted on the inner bottom surface of the first storage portion 21a is a one-chip integrated circuit element incorporating an inverter amplifier (oscillation amplifier) such as a C-MOS. Configure. A plurality of pads are formed on the bottom side of the IC 4. In the IC 4, a plurality of pads of the IC 2 and the wiring patterns H 21 to H 26 formed on the base 2 are connected by, for example, FCB through metal bumps C such as gold. In this embodiment, a configuration in which metal bumps are joined is used as an example, but metal wire bumps may be used.

なお、本形態で用いられるIC4は、水晶振動素子3の周波数信号を増幅する発振回路部のみを具備したいわゆるSPXO用のICに限らず、周波数調整回路を付加機能として具備されたいわゆるVCXO用のICであってもよく、温度補償機能などが付加機能として具備されたいわゆるTCXO用のICでもよい。また、これらを組みあわされたICであってもよい。IC4としては、CMOS以外のバイポーラ、バイCMOSなどであってもよい。   The IC 4 used in this embodiment is not limited to a so-called SPXO IC that includes only an oscillation circuit unit that amplifies the frequency signal of the crystal resonator element 3, but also a so-called VCXO IC that includes a frequency adjustment circuit as an additional function. It may be an IC, or a so-called TCXO IC having a temperature compensation function or the like as an additional function. Further, an IC in which these are combined may be used. The IC 4 may be bipolar other than CMOS, bi-CMOS, or the like.

IC4の上方で、収納部2aの同一空間である第2の収納部22aには所定の間隔を持って水晶振動素子3が搭載される。水晶振動素子3は例えば矩形状のATカット水晶振動板であり、その表裏面には励振電極と引出電極が各々形成されている。これらの電極は、例えば、クロムまたはニッケルの下地電極層と、銀または金の中間電極層と、クロムまたはニッケルの上部電極層とから構成された3層の積層薄膜、またはクロムやニッケルの下地電極層と、銀または金の上部電極層とから構成された2層の積層薄膜である。これら各電極は真空蒸着法やスパッタリング法等の薄膜形成手段により形成することができる。   Above the IC 4, the crystal resonator element 3 is mounted at a predetermined interval in the second storage portion 22 a that is the same space of the storage portion 2 a. The quartz resonator element 3 is, for example, a rectangular AT-cut quartz diaphragm, and excitation electrodes and extraction electrodes are formed on the front and back surfaces thereof. These electrodes are, for example, a three-layer laminated thin film composed of a chromium or nickel base electrode layer, a silver or gold intermediate electrode layer, and a chromium or nickel upper electrode layer, or a chromium or nickel base electrode It is a two-layer laminated thin film composed of a layer and a silver or gold upper electrode layer. Each of these electrodes can be formed by a thin film forming means such as a vacuum deposition method or a sputtering method.

水晶振動素子3とベース2との接合は、例えばペースト状であり銀フィラー等の金属微小片を含有するシリコーン系の導電樹脂接着剤(導電性接合材)Sを用いている。図1に示すように、導電性樹脂接着剤Sは、第2の配線パターンH27,H28のうちの一部の上面に塗布されるとともに、導電性樹脂接着剤Sを水晶振動素子3と保持台21bの間に介在させ硬化させることで、お互いを電気的機械的に接合している。以上により、水晶振動素子3の一端部をベース2の第1の収納部21aの底面から隙間を設けながら、水晶振動素子3の対向する他端部をベースの保持台21bに接合して、片持ち保持される。なお、本形態では、シリコーン系の導電樹脂接着剤により接合した構成を例にしているが、この導電性接合材として他の導電性樹脂接着剤や金属バンプ、金属メッキバンプなどのバンプ材料、ろう材を用いてもよい。   The crystal resonator element 3 and the base 2 are joined using, for example, a silicone-based conductive resin adhesive (conductive bonding material) S that is in the form of a paste and contains fine metal pieces such as silver filler. As shown in FIG. 1, the conductive resin adhesive S is applied to a part of the upper surface of the second wiring patterns H27 and H28, and the conductive resin adhesive S is applied to the crystal vibrating element 3 and the holding base. By interposing and hardening between 21b, it mutually joins electromechanically. As described above, one end of the crystal resonator element 3 is joined to the holding base 21b of the base while the opposite end of the crystal resonator element 3 is joined to the base holding base 21b while providing a gap from the bottom surface of the first storage portion 21a of the base 2. Held. In this embodiment, the structure bonded by a silicone-based conductive resin adhesive is used as an example. However, as this conductive bonding material, other conductive resin adhesives, bump materials such as metal bumps and metal plating bumps, brazing A material may be used.

ベース2を気密封止する蓋5は、例えば、コバール等からなるコア材に金属ろう材(封止材)が形成された構成である。この金属ろう材からなる接合材51がベース2の封止部222と接合される構成となる。金属製の蓋5の平面視外形はセラミックベースの当該外形とほぼ同じであるか、若干小さい構成となっている。   The lid 5 for hermetically sealing the base 2 has a configuration in which a metal brazing material (sealing material) is formed on a core material made of, for example, Kovar. The bonding material 51 made of the metal brazing material is bonded to the sealing portion 222 of the base 2. The external shape of the metal lid 5 in plan view is substantially the same as or slightly smaller than that of the ceramic base.

収納部2aにIC4と水晶振動素子3が格納されたベース2の封止部222に対して金属製の蓋5にて被覆し、金属製の蓋5の接合材51とベースの封止部222を溶融硬化させ、気密封止を行うことで表面実装型の水晶発振器1の完成となる。   The sealing part 222 of the base 2 in which the IC 4 and the crystal resonator element 3 are stored in the storage part 2 a is covered with a metal lid 5, and the bonding material 51 of the metal lid 5 and the base sealing part 222 are covered. The surface-mount type crystal oscillator 1 is completed by melting and curing and sealing hermetically.

このように構成された表面実装型の水晶発振器1は、図示しない回路基板の配線パターンに対してはんだなどの接合材を用いて接合される。   The surface-mount type crystal oscillator 1 configured as described above is bonded to a wiring pattern of a circuit board (not shown) using a bonding material such as solder.

なお、本発明の実施形態では基板部20の一主面側(上方)のみに枠部を形成した断面凹形状のベースを例にして説明しているが、図6に示すように、2層の基板部23(ベース中層1)と基板部24(ベース中層2)の一主面側(上方)と他主面側(下方)の両面に上枠部25と下枠部26を形成した断面略H型のベースのものに適用してもよい。図6では、上枠部25の円弧状の切欠き部25cの半径R1とそれ以外(基板部23,24、下枠部26)の円弧状の切欠き部(23c,24c,26c)の半径R2とは全て同じ径として構成している。また、圧電接続端子AT1,AT2は基板部23,24の切欠き部23c,24cに形成している。   In the embodiment of the present invention, a base having a concave cross section in which a frame portion is formed only on one main surface side (upper side) of the substrate portion 20 is described as an example. However, as shown in FIG. A cross section in which an upper frame portion 25 and a lower frame portion 26 are formed on both the main surface side (upper side) and the other main surface side (lower side) of the substrate portion 23 (base middle layer 1) and the substrate portion 24 (base middle layer 2). You may apply to the thing of a substantially H-type base. In FIG. 6, the radius R1 of the arc-shaped cutout portion 25c of the upper frame portion 25 and the radius of the arc-shaped cutout portions (23c, 24c, 26c) of the other (substrate portions 23, 24, lower frame portion 26). All of R2 have the same diameter. The piezoelectric connection terminals AT1 and AT2 are formed in the notches 23c and 24c of the substrate portions 23 and 24, respectively.

本発明の実施形態による表面実装型水晶発振器1によれば、水晶振動素子3のみの特性を計測できる圧電接続端子AT1,AT2を形成するための切欠き部21c1,21c2をベースの積層体の枠部の幅が広く機械的強度の比較的強い4隅にのみ構成しているため、機械的強度の比較的弱く、ベースの収納部を狭めること影響しやすい積層体の枠部の4辺部分に切欠き部を構成する必要がない。加えて、第2枠部22の4辺部分の寸法が全て同じW寸法で形成されているため、ベース2の外装部の一部を構成する第2枠部22の外周では同じ強度とすることができ、各辺により機械的強度の弱い部分がなくなる。   According to the surface-mounted crystal oscillator 1 according to the embodiment of the present invention, the cutout portions 21c1 and 21c2 for forming the piezoelectric connection terminals AT1 and AT2 capable of measuring the characteristics of only the crystal resonator element 3 are used as the frame of the laminated body. Since it is composed of only four corners with a wide width and relatively strong mechanical strength, it is relatively weak in mechanical strength and can be easily affected by narrowing the storage part of the base. There is no need to form a notch. In addition, since the dimensions of the four side portions of the second frame portion 22 are all formed with the same W dimension, the outer periphery of the second frame portion 22 constituting a part of the exterior portion of the base 2 has the same strength. And each side has no weak mechanical strength.

特に、圧電接続端子AT1,AT2をベース中層の第1枠部21の切欠き部21c1,21c2にのみ形成しているので、ベース上層の第2枠部22に対して圧電接続端子が形成された切欠き部を形成することによる形状的な制限を与えない。加えて、ベース上層の第2枠部22の切欠き部22c1,22c2,22c3,22c4の半径をR1とし、ベース中層の第1枠部21の切欠き部21c1,21c2,21c3,21c4の半径をR2とし、ベース上層の第2枠部22の外周縁と内周縁との4隅を除いた4辺の寸法が一定の幅寸法Wで形成した場合、これらの寸法に大小関係を成立するように構成しR1<R2≦Wとしている。このような大小関係を成立させることで、ベース上層の第2枠部22を含めて外周縁の4隅に切欠き部20cと21cと22cを形成しても、圧電接続端子AT1,AT2として機能させるために必要な半径の切欠き部を確保することができる。加えて、ベース上層の第2枠部22の4隅の幅寸法をベース上層の第2枠部22の4辺の幅寸法に対して極端に狭められることがない。つまり、ベース上層の第2枠部22の4隅の領域における機械的な強度を低下させることもなく、蓋5を接合するための封止部221の4隅の領域を狭めることもなくなる。   In particular, since the piezoelectric connection terminals AT1 and AT2 are formed only in the notches 21c1 and 21c2 of the first frame portion 21 of the base middle layer, the piezoelectric connection terminals are formed with respect to the second frame portion 22 of the base upper layer. No shape limitation is imposed by forming the notch. In addition, the radius of the notches 22c1, 22c2, 22c3, and 22c4 of the second frame portion 22 of the base upper layer is R1, and the radius of the notches 21c1, 21c2, 21c3, and 21c4 of the first frame portion 21 of the base middle layer is When the dimensions of the four sides excluding the four corners of the outer peripheral edge and the inner peripheral edge of the second frame portion 22 of the base upper layer are formed with a constant width dimension W, the magnitude relationship is established between these dimensions. In the configuration, R1 <R2 ≦ W. By establishing such a magnitude relationship, even if the notches 20c, 21c, and 22c are formed at the four corners of the outer periphery including the second frame portion 22 of the base upper layer, the piezoelectric connecting terminals AT1 and AT2 can be functioned. Therefore, it is possible to secure a notch portion having a radius required for the purpose. In addition, the width dimension of the four corners of the second frame portion 22 of the base upper layer is not extremely narrowed with respect to the width dimension of the four sides of the second frame portion 22 of the base upper layer. That is, the mechanical strength in the four corner regions of the second frame portion 22 of the base upper layer is not lowered, and the four corner regions of the sealing portion 221 for joining the lid 5 are not narrowed.

特に、ベース上層の第2枠部22の切欠き部22c1,22c2,22c3,22c4の半径R1とベース中層の第1枠部21の切欠き部21c1,21c2,21c3,21c4の半径R2が同径の場合に比べて、ベース上層の切欠き部の半径R1をベース中層の切欠き部の半径R2より小径化することで、ベース上層の第2枠部22の上面の封止部221の形成位置をベース4隅に延出して形成することができる。このため、蓋5を接合するための接合領域を拡大できるので、気密封止性を高めることができる。さらに、ベース中層の切欠き部の半径R2をベース上層の切欠き部の半径R1より大径化することで、検査プローブや測定用治具の端子を圧電接続端子により一層接触させやすくできる。   In particular, the radius R1 of the notches 22c1, 22c2, 22c3, and 22c4 of the second frame portion 22 of the base upper layer and the radius R2 of the notches 21c1, 21c2, 21c3, and 21c4 of the first frame portion 21 of the base middle layer are the same diameter. Compared with the case of FIG. 5, the radius R1 of the notch portion of the base upper layer is made smaller than the radius R2 of the notch portion of the base middle layer, so that the sealing portion 221 is formed on the upper surface of the second frame portion 22 of the base upper layer. Can be formed to extend to the corners of the base 4. For this reason, since the joining area | region for joining the lid | cover 5 can be expanded, an airtight sealing property can be improved. Furthermore, by making the radius R2 of the notch portion of the base middle layer larger than the radius R1 of the notch portion of the base upper layer, the terminals of the inspection probe and the measuring jig can be more easily brought into contact with the piezoelectric connection terminal.

以上のように、パッケージの小型化に対応させながらより信頼性の高い圧電接続端子AT1,AT2を構成することができるより信頼性の高い水晶発振器1を提供することができる。   As described above, it is possible to provide the crystal oscillator 1 with higher reliability that can configure the piezoelectric connection terminals AT1 and AT2 with higher reliability while accommodating the downsizing of the package.

また、上記した本実施例では、圧電振動素子としてATカット水晶振動板を用いているが、これに限定されるものでなく、音叉型水晶振動片であってもよい。また、圧電振動素子として水晶を材料としているが、これに限定されるものではなく、圧電セラミックスやLiNbO3等の圧電単結晶材料を用いてもよい。すなわち、任意の圧電振動素子が適用可能である。また、圧電振動素子を片持ち保持するものを例にしているが、圧電振動素子の両端を保持する構成であってもよい。 In the above-described embodiment, the AT-cut quartz crystal vibrating plate is used as the piezoelectric vibrating element. However, the present invention is not limited to this, and a tuning-fork type quartz vibrating piece may be used. Further, although quartz is used as the piezoelectric vibration element, the present invention is not limited to this, and a piezoelectric single crystal material such as piezoelectric ceramics or LiNbO 3 may be used. That is, any piezoelectric vibration element can be applied. In addition, although the example in which the piezoelectric vibration element is cantilevered is taken as an example, a configuration in which both ends of the piezoelectric vibration element are retained may be employed.

また、上述した本発明の実施形態では電子部品素子としてICを使用した水晶発振器(圧電発振器)を例にしているが、サーミスタやダイオードなどの感温素子やその他の機能電子部品素子を使用した機能部品付きの水晶振動子(圧電振動子)にも本発明は適用可能である。   In the above-described embodiment of the present invention, a crystal oscillator (piezoelectric oscillator) using an IC as an electronic component element is taken as an example, but a function using a temperature sensitive element such as a thermistor or a diode or other functional electronic component element is used. The present invention is also applicable to a crystal resonator (piezoelectric resonator) with parts.

また、本実施例では、金属ろう材による封止を例にしたが、これに限定されるものではなく、シーム封止、ビーム封止(例えば、レーザビーム、電子ビーム)やガラス封止等でも適用することができる。   In this embodiment, sealing with a metal brazing material is taken as an example. However, the present invention is not limited to this, and seam sealing, beam sealing (for example, laser beam, electron beam), glass sealing, etc. Can be applied.

本発明は、その精神または主要な特徴から逸脱することなく、他のいろいろな形で実施することができる。そのため、上述の実施の形態はあらゆる点で単なる例示にすぎず、限定的に解釈してはならない。本発明の範囲は特許請求の範囲によって示すものであって、明細書本文には、なんら拘束されない。さらに、特許請求の範囲の均等範囲に属する変形や変更は、全て本発明の範囲内のものである。   The present invention can be implemented in various other forms without departing from the spirit or main features thereof. Therefore, the above-described embodiment is merely an example in all respects and should not be interpreted in a limited manner. The scope of the present invention is indicated by the claims, and is not restricted by the text of the specification. Further, all modifications and changes belonging to the equivalent scope of the claims are within the scope of the present invention.

圧電振動デバイスの量産に適用できる。   It can be applied to mass production of piezoelectric vibration devices.

1 水晶発振器(圧電振動デバイス)
2 ベース
3 水晶振動素子(圧電振動素子)
4 IC
5 蓋
C 金属バンプ
S 導電性樹脂接着剤
1 Crystal oscillator (piezoelectric vibration device)
2 Base 3 Crystal oscillator (piezoelectric oscillator)
4 IC
5 Lid C Metal bump S Conductive resin adhesive

Claims (2)

セラミック材料からなる基板部と枠部の積層体で構成され、上層と中層と下層の少なくとも3層以上の積層体により外装部と収納部を形成する直方体形状のベース、
上記ベース上層の枠部上面に接合され、上記ベース上層の枠部による収納部を気密封止する蓋、
上記ベース下層の下面に形成され、外部と接続するための外部接続端子、
上記ベース上層と上記ベース中層と上記ベース下層との外周縁の4隅にのみ形成され、ベースの高さ方向に沿って伸長した円弧状の切欠き部、
上記ベースの収納部に収納される圧電振動素子と電子部品素子、
上記ベース中層の切欠き部に形成され、上記圧電振動素子とのみ電気的に接続される圧電接続端子、
を備えており、
上記ベース上層の切欠き部の半径をR1とし、
上記ベース中層の切欠き部の半径をR2とし、
上記ベース上層の枠部の4隅を除いた4辺のうちの最小幅寸法をWで形成した場合、
R1<R2≦Wとなる
ことを特徴とする圧電振動デバイス。
A rectangular parallelepiped base comprising a laminate of a substrate part and a frame part made of a ceramic material, and forming an exterior part and a storage part by a laminate of at least three layers of an upper layer, a middle layer and a lower layer,
A lid which is bonded to the upper surface of the frame portion of the base upper layer and hermetically seals the storage portion by the frame portion of the base upper layer;
Formed on the lower surface of the base lower layer, external connection terminals for connecting to the outside,
An arc-shaped notch formed only at the four corners of the outer periphery of the base upper layer, the base middle layer, and the base lower layer, and extending along the height direction of the base;
Piezoelectric vibration element and electronic component element housed in the base housing part,
A piezoelectric connection terminal formed in the notch portion of the base middle layer and electrically connected only to the piezoelectric vibration element;
With
The radius of the notch in the base upper layer is R1,
The radius of the notch in the base middle layer is R2,
When the minimum width dimension of the four sides excluding the four corners of the frame portion of the base upper layer is W,
A piezoelectric vibration device, wherein R1 <R2 ≦ W.
請求項1に記載の圧電振動デバイスであって、
上記ベースの平面視外形寸法のうち長辺の寸法が1.6mm以下で短辺の寸法が1.2mm以下であり、かつ上記ベース中層の切欠き部の半径R2の寸法を0.085mm以上0.2mm以下とした
ことを特徴とする圧電振動デバイス。
The piezoelectric vibration device according to claim 1,
Of the outer dimensions of the base in plan view, the long side dimension is 1.6 mm or less, the short side dimension is 1.2 mm or less, and the radius R2 of the notch portion of the base middle layer is 0.085 mm or more and 0. A piezoelectric vibration device characterized by being 2 mm or less.
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JP7044005B2 (en) 2018-07-31 2022-03-30 株式会社大真空 Piezoelectric vibration device

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