JP2017028201A - Substrate processing apparatus, substrate processing method and storage medium - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus, a substrate processing method and a storage medium which can remove an outer edge of a coating in a simple composition without being associated with fusion and re-curing of the coating.SOLUTION: A substrate processing apparatus comprises a liquid processing unit U1 which includes: a rotation holding part 20 for holding and rotating a wafer W; a first process liquid supply part 30 for coating a first process liquid P for water repellent finish to an outer edge of a surface Wa of the wafer W by contact; a process gas supply part 50 for spraying a process gas G to positions coated with the first process liquid P by the first process liquid supply part 30 from an inner peripheral side of the wafer W; and a second process liquid supply part 60 for supplying a resist liquid R for coating formation to the surface Wa of the wafer W.SELECTED DRAWING: Figure 4

Description

  The present disclosure relates to a substrate processing apparatus, a substrate processing method, and a recording medium.

  In the manufacture of a semiconductor substrate, after a resist film is formed on the substrate, the resist film on the peripheral edge of the substrate may be removed. For example, Patent Document 1 describes a technique for dissolving and removing a resist film on a peripheral portion of a substrate with a solvent. Patent Document 1 describes a technique for removing the resist film at the peripheral portion of the substrate during development by exposing the resist film at the peripheral portion of the substrate in addition to the exposure for forming the resist pattern.

JP 2010-141162 A

  As described above, when the coating on the peripheral portion of the substrate is removed by dissolution with a solvent, the peripheral portion of the coating may be raised with dissolution and re-curing. When such a bulge occurs, there is a possibility that the bulged portion cannot be completely removed when removing the coating after use. If the coating cannot be removed, the portion remaining on the substrate may become a particle generation source. Further, when the coating on the peripheral edge of the substrate is removed by exposure and development, it is necessary to separately provide an apparatus for exposing the peripheral edge.

  It is an object of the present disclosure to provide a substrate processing apparatus, a substrate processing method, and a recording medium that can remove the peripheral portion of the coating with a simple configuration without dissolving and recuring the coating.

  A substrate processing apparatus according to the present disclosure includes a rotation holding unit that holds and rotates a substrate, a first processing liquid supply unit that applies a first processing liquid for water repellent treatment to a peripheral portion of the surface of the substrate by contact, A processing gas supply unit for spraying a processing gas from the inner peripheral side of the substrate to a position where the first processing liquid supply unit has applied the first processing solution, and a second processing solution for film formation are supplied to the surface of the substrate. A second treatment liquid supply unit.

  According to such a substrate processing apparatus, after the first processing liquid is applied by the first processing liquid supply unit and the peripheral edge of the substrate is subjected to the water repellent treatment, the second processing liquid is supplied while rotating the substrate. By spreading the second treatment liquid on the surface of the substrate, a liquid film is formed on the surface of the substrate, and a film can be formed by drying it. The second treatment liquid that has reached the peripheral edge of the substrate due to the rotation of the substrate is peeled off from the substrate by the water-repellent treatment applied in advance and scattered around. As a result, the liquid film on the peripheral edge of the substrate is removed. That is, the film before drying is removed. For this reason, the peripheral part of a film can be removed by simple structure, without melt | dissolving and re-hardening of a film.

  In the processing described above, the first processing liquid supply unit applies the first processing liquid by contact. For this reason, compared with the structure which supplies a 1st process liquid from the position away from the surface of a board | substrate like dispersion | distribution etc., for example, scattering of the 1st process liquid to parts other than the part which should perform a water repellent process can be suppressed. For this reason, the formation defect of the film resulting from scattering of the 1st processing liquid can be prevented certainly.

  Since the substrate processing apparatus includes a processing gas supply unit in addition to the first processing liquid supply unit, the processing gas is supplied from the inner peripheral side of the substrate to the position where the first processing liquid supply unit applied the first processing liquid. Can be sprayed. Thus, the first processing liquid is applied thinly and without spots on the peripheral edge of the substrate in a state in which the spread of the first processing liquid toward the inner peripheral side of the substrate is suppressed. For this reason, the water-repellent treatment can be applied to the peripheral portion of the substrate without any spots, and the liquid film on the peripheral portion of the substrate can be more reliably removed.

  While controlling the rotation holding unit to rotate the substrate at the first rotation speed, the first processing liquid supply unit is controlled to apply the first processing liquid to the peripheral portion of the surface of the substrate, and the first processing liquid The processing gas supply unit is controlled to spray the processing gas to the position where the first processing liquid is applied by the supply unit, and the rotation holding unit is configured to rotate the substrate at a second rotational speed greater than the first rotational speed. Controlling the second processing liquid supply unit so as to supply the second processing liquid to the surface of the substrate, and the second rotation of the substrate while the supply of the second processing liquid to the substrate is stopped. Controlling the rotation holding unit to rotate at a third rotation number smaller than the number, and controlling the rotation holding unit to rotate the substrate at a fourth rotation number larger than the third rotation number. You may further provide the control part comprised so that it might perform in order.

  In this case, when the first treatment liquid is applied, the substrate rotates at the first rotation speed, so that the water repellent treatment can be performed over the entire periphery of the peripheral portion of the substrate. In addition, since the processing gas is sprayed immediately on the place where the first processing liquid is applied, the water repellent treatment can be performed on the periphery of the substrate without any spots. When the second processing liquid supply unit supplies the second processing liquid, the substrate rotates at a second rotational speed greater than the first rotational speed, so that the second processing liquid is more reliably applied by the centrifugal force. Can be spread. Further, the second processing liquid on the peripheral edge of the substrate is more reliably scattered. Thereby, the liquid film at the peripheral edge of the substrate can be removed more reliably. After the supply of the second processing liquid is stopped, the rotation speed of the substrate shifts to the fourth rotation speed. By continuing the rotation of the substrate at the fourth number of rotations, the liquid film on the substrate is dried and a film is formed. The number of rotations of the substrate temporarily decreases to the third number of rotations while shifting from the second number of rotations to the fourth number of rotations. As a result, the second processing liquid that has been biased toward the peripheral edge of the liquid film by the centrifugal force at the second rotational speed returns to the center side of the substrate, so that the bias of the second processing liquid in the liquid film before drying is alleviated. Therefore, the uniformity of the film thickness can be improved.

  The fourth rotational speed may be smaller than the second rotational speed. In this case, the unevenness of the second treatment liquid in the liquid film before drying can be further suppressed, and the film thickness uniformity can be further improved.

  The control unit sets the speed change rate from the second speed to the third speed, the speed change rate from the first speed to the second speed, and the speed change rate from the third speed to the fourth speed. You may control a rotation holding | maintenance part so that it may become large compared.

  In this case, since the rotation speed of the substrate changes suddenly when the second rotation speed is shifted to the third rotation speed, the second processing liquid that is biased toward the peripheral edge of the liquid film due to the centrifugal force of the second rotation speed is further increased. It surely returns to the center side of the substrate. Therefore, the uniformity of the film thickness can be further improved.

  In the substrate processing method according to the present disclosure, the first treatment liquid for water repellent treatment is applied to the peripheral portion of the surface of the substrate by contact, and the position where the first treatment liquid is applied from the inner peripheral side of the substrate. Spraying a processing gas and supplying a second processing liquid for forming a film to the surface of the substrate while rotating the substrate.

  A recording medium according to the present disclosure records a program for causing a substrate processing apparatus to execute the substrate processing method.

  According to the present disclosure, the peripheral portion of the coating can be removed with a simple configuration without melting and re-curing the coating.

It is a perspective view which shows schematic structure of a substrate processing system. It is sectional drawing which follows the II-II line | wire in FIG. It is sectional drawing which follows the III-III line | wire in FIG. It is a schematic diagram which shows schematic structure of a liquid processing unit. It is a hardware block diagram of a control part. It is a flowchart which shows the execution procedure of a substrate processing method. It is a side view which shows typically a mode that the 1st process liquid is apply | coated to the surface of a board | substrate. It is a top view of the board | substrate in FIG. It is a side view which shows typically a mode that the 3rd process liquid is apply | coated to the surface of a board | substrate. It is a side view which shows typically a mode that the 2nd process liquid is apply | coated to the surface of a board | substrate. It is an enlarged view of the peripheral part of the board | substrate after apply | coating a 2nd process liquid. It is a graph which shows the time change of the rotation speed of a board | substrate.

  Hereinafter, embodiments will be described in detail with reference to the drawings. In the description, the same elements or elements having the same functions are denoted by the same reference numerals, and redundant description is omitted.

[Substrate processing system]
First, an outline of the substrate processing system 1 according to the present embodiment will be described with reference to FIGS. As shown in FIG. 1, the substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The exposure apparatus 3 performs an exposure process for a resist film (photosensitive film). Specifically, the exposure target portion of the resist film is irradiated with energy rays by a method such as immersion exposure.

  The coating / developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before the exposure process by the exposure apparatus 3, and performs a development process of the resist film after the exposure process.

  The coating / developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

  The carrier block 4 includes a carrier station 12 and a carry-in / carry-out unit 13. The loading / unloading unit 13 is interposed between the carrier station 12 and the processing block 5. The carrier station 12 supports a plurality of carriers 11. The carrier 11 accommodates, for example, a plurality of circular wafers W in a sealed state. The carrier 11 has an opening / closing door 11a for taking in and out the wafer W. The carrier 11 is detachably installed on the carrier station 12 so that the opening / closing door 11a faces the loading / unloading unit 13 side.

  The carry-in / carry-out unit 13 has a plurality of opening / closing doors 13 a corresponding to the plurality of carriers 11 on the carrier station 12. By opening the open / close doors 11a and 13a at the same time, the inside of the carrier 11 and the inside of the carry-in / out part 13 communicate. The carry-in / carry-out unit 13 incorporates a delivery arm A1 (see FIGS. 2 and 3). The delivery arm A <b> 1 takes out the wafer W from the carrier 11 and delivers it to the processing block 5, receives the wafer W from the processing block 5, and returns it into the carrier 11.

  The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. The processing modules 14, 15, 16, and 17 contain a plurality of liquid processing units U1, a plurality of heat treatment units U2, and a transfer arm A3 that transfers the wafer W to these units (see FIG. 3). The processing module 17 further includes a direct transfer arm A6 that transfers the wafer W without passing through the liquid processing unit U1 and the heat treatment unit U2 (see FIG. 2).

  The processing module 14 forms a lower layer film on the surface of the wafer W by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 14 applies a liquid for forming a lower layer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments associated with the formation of the lower layer film.

  The processing module 15 forms a resist film on the lower layer film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 15 applies a liquid for forming a resist film on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments accompanying the formation of the resist film.

  The processing module 16 forms an upper layer film on the resist film by the liquid processing unit U1 and the heat treatment unit U2. The liquid processing unit U1 of the processing module 16 applies a liquid for forming an upper layer film on the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper layer film.

  The processing module 17 performs development processing of the resist film after exposure by the liquid processing unit U1 and the heat treatment unit U2. The developing unit applies a developing solution onto the exposed surface of the wafer W, and then rinses the developing solution with a rinsing solution to develop the resist film. The heat treatment unit performs various heat treatments associated with the development processing. The heat treatment is, for example, heat treatment before development processing (PEB: Post Exposure Bake), heat treatment after development processing (PB: Post Bake), or the like.

  In the processing block 5, a shelf unit U10 is provided on the carrier block 4 side, and a shelf unit U11 is provided on the interface block 6 side (see FIGS. 2 and 3). The shelf unit U10 is provided so as to extend from the floor surface to the processing module 16, and is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10. The shelf unit U11 is provided so as to extend from the floor surface to the upper part of the processing module 17, and is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 incorporates a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 delivers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

  The substrate processing system 1 performs the coating / developing process according to the following procedure. First, the transfer arm A1 transports the wafer W in the carrier 11 to the shelf unit U10. The lift arm A7 places the wafer W in the cell for the processing module 14, and the transfer arm A3 transfers the wafer W to each unit in the processing module 14. The liquid processing unit U1 and the heat treatment unit U2 of the processing module 14 form a lower layer film on the surface of the wafer W transferred by the transfer arm A3. When the formation of the lower layer film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the lift arm A7 places the wafer W returned to the shelf unit U10 in the cell for the processing module 15, and the transfer arm A3 transfers it to each unit in the processing module 15. The liquid processing unit U1 and the heat treatment unit U2 of the processing module 15 form a resist film on the lower layer film of the wafer W transferred by the transfer arm A3. When the formation of the resist film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the wafer W returned to the shelf unit U <b> 10 is placed in the cell for the processing module 16 by the elevating arm A <b> 7, and the transfer arm A <b> 3 is transferred to each unit in the processing module 16. The liquid processing unit U1 and the heat treatment unit U2 of the processing module 16 form an upper layer film on the resist film of the wafer W transferred by the transfer arm A3. When the formation of the upper layer film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the lift arm A7 arranges the wafer W returned to the shelf unit U10 in the cell for the processing module 17, and the transfer arm A6 directly transfers it to the shelf unit U11. The wafer W is delivered and the arm A8 sends it to the exposure apparatus 3. When the exposure process in the exposure apparatus 3 is completed, the transfer arm A8 receives the wafer W from the exposure apparatus 3 and returns it to the shelf unit U11.

  Next, the transfer arm A3 of the processing module 17 transfers the wafer W returned to the shelf unit U11 to each unit in the processing module 17. The liquid processing unit U1 and the heat treatment unit U2 of the processing module 17 perform development processing of the resist film on the wafer W transferred by the transfer arm A3 and heat treatment associated therewith. When the development of the resist film is completed, the transfer arm A3 transfers the wafer W to the shelf unit U10.

  Next, the wafer W transferred to the shelf unit U <b> 10 is placed in the delivery cell by the lift arm A <b> 7, and the delivery arm A <b> 1 returns into the carrier 11. Thus, the coating / developing process is completed.

[Substrate processing equipment]
Next, the liquid processing unit U1 of the processing module 15 will be described as an example of the substrate processing apparatus.

  As shown in FIG. 4, the liquid processing unit U1 includes a rotation holding unit 20, a first processing liquid supply unit 30, a processing gas supply unit 50, a second processing liquid supply unit 60, and a control unit 80. Prepare.

  The rotation holding unit 20 holds and rotates the wafer W. For example, the rotation holding unit 20 includes a holding unit 22, a rotating unit 24, and an elevating unit 26. The holding unit 22 sucks and holds the central portion of the wafer W held horizontally, for example, from below. The rotating unit 24 rotates the holding unit 22 around the vertical rotation axis CL1 with a power source such as a motor. The raising / lowering part 26 raises / lowers the holding | maintenance part 22 with power sources, such as a motor, for example. Hereinafter, the “inner peripheral side of the wafer W” means the inner peripheral side of the wafer W held by the holding unit 22. The “outer peripheral side of the wafer W” means the outer peripheral side of the wafer W held by the holding unit 22.

  The liquid processing unit U1 may further include a cup 28. The cup 28 opens upward and accommodates the holding portion 22. The cup 28 stores a processing liquid (described later) shaken off from the wafer W. The bottom portion 28a of the cup 28 is provided with a drainage port 28b, and a drainage duct (not shown) is connected to the drainage port 28b.

  The first treatment liquid supply unit 30 applies the first treatment liquid for water repellent treatment to the peripheral edge of the surface Wa of the wafer W by contact. A 1st process liquid is a chemical | medical solution containing a fluororesin, for example. The first treatment liquid may be a release agent such as silicone oil. Alternatively, the first treatment liquid may be, for example, a chemical liquid for forming a water repellent uneven surface (for example, a fractal structure surface).

  For example, the first processing liquid supply unit 30 includes a liquid delivery unit 31, a liquid source 36, and a drive unit 41.

  The liquid delivery unit 31 delivers the first processing liquid while contacting the surface of the wafer W. For example, the liquid delivery unit 31 includes a storage unit 32 and a chip 33. The accommodating part 32 accommodates a 1st process liquid. The chip 33 is, for example, a ball 34 that is rotatably attached to the lower end portion of the housing portion 32, and delivers the first processing liquid according to the rotation of the ball 34. The material of the ball 34 is, for example, a synthetic resin such as PVA. In addition, the structure of the liquid delivery part 31 is not restricted to what is illustrated here. The liquid delivery unit 31 may be configured in any way as long as the first treatment liquid can be delivered while being in contact with the surface Wa of the wafer W. For example, the chip 33 may be a roller that can rotate around one axis. Further, the chip 33 is not necessarily a movable member such as a ball or a roller, and may be a member that can be impregnated with the first treatment liquid. For example, the tip 33 may be a cloth member such as felt or a brush-like member.

  The liquid source 36 supplies the first processing liquid to the storage unit 32 of the liquid delivery unit 31. For example, the liquid source 36 is connected to the accommodating portion 32 via a supply pipe 35 that is passed through the arm 40. The supply pipe 35 is provided with a pump 38 and a valve 39. The pump 38 pumps the first processing liquid from the liquid source 36 to the storage unit 32. By adjusting the pressure of the pump 38, the discharge amount of the first processing liquid may be adjusted to be constant. The valve 39 opens and closes the supply pipe 35 according to the control signal.

  The liquid delivery unit 31 is fixed to the drive unit 41 via the arm 40. The drive unit 41 moves the liquid delivery unit 31 up and down and moves it in the horizontal direction. For example, the drive unit 41 includes a horizontal actuator 42 and a vertical actuator 43. The horizontal actuator 42 moves the liquid delivery unit 31 in the horizontal direction by a power source such as a motor. The vertical actuator 43 moves the liquid delivery unit 31 up and down by a power source such as an air cylinder.

  The processing gas supply unit 50 sprays the processing gas from the inner peripheral side of the wafer W to the position where the first processing liquid supply unit 30 applied the first processing liquid. The processing gas is an inert gas such as nitrogen gas. For example, the processing gas supply unit 50 includes a nozzle 51 and a gas source 56. The nozzle 51 discharges a processing gas. The nozzle 51 is arranged on the inner peripheral side (rotation axis CL1 side) of the wafer W as compared with the liquid delivery unit 31. The nozzle 51 may be fixed to the liquid delivery unit 31 or may be movable independently of the liquid delivery unit 31. The nozzle 51 opens downward, and the opening direction is inclined toward the outer peripheral side of the wafer W. More specifically, the nozzle 51 may open toward the position where the liquid delivery unit 31 contacts on the surface Wa of the wafer W held by the holding unit 22.

  The gas source 56 supplies a processing gas to the nozzle 51. The gas source 56 is, for example, a cylinder containing compressed processing gas, and is connected to the nozzle 51 via a supply pipe 57. The supply pipe 57 is provided with a valve 59. The valve 59 opens and closes the supply pipe 57 according to the control signal.

  The second processing liquid supply unit 60 supplies a resist liquid (second processing liquid) for forming a resist film (film) to the surface of the wafer W. The resist solution is a chemical solution for forming a resist film, for example. The viscosity of the resist solution is, for example, 50 to 200 cP. For example, the second processing liquid supply unit 60 includes a nozzle 61, a liquid source 62, and a driving unit 67. The nozzle 61 opens downward above the wafer W held by the holding unit 22 and discharges the resist solution.

  The liquid source 62 supplies a resist liquid to the nozzle 61. For example, the liquid source 62 is connected to the nozzle 61 via the supply pipe 63. The supply pipe 63 is provided with a pump 64 and a valve 65. The pump 64 pumps the resist solution from the liquid source 62 to the nozzle 61. The valve 65 opens and closes the supply pipe 63 according to the control signal.

  The nozzle 61 is connected to the drive unit 67 via the arm 66. The drive unit 67 moves the nozzle 61 in the horizontal direction along the guide rail B by a power source such as a motor.

  The liquid processing unit U1 may further include a third processing liquid supply unit 70. The third processing liquid supply unit 70 supplies a pre-wet liquid (third processing liquid) to the surface Wa of the wafer W. The pre-wet liquid is a liquid for improving the wettability of the resist liquid with respect to the wafer W. The pre-wet liquid is a volatile solvent such as thinner. For example, the third processing liquid supply unit 70 includes a nozzle 71, a liquid source 72, and a driving unit 77. The nozzle 71 opens downward above the wafer W held by the holding unit 22 and discharges a pre-wet liquid.

  The liquid source 72 supplies a pre-wet liquid to the nozzle 71. For example, the liquid source 72 is connected to the nozzle 71 via the supply pipe 73. The supply pipe 73 is provided with a pump 74 and a valve 75. The pump 74 pumps the pre-wet liquid from the liquid source 72 to the nozzle 71. The valve 75 opens and closes the supply pipe 73 according to the control signal. The nozzle 71 is connected to the drive unit 77 via the arm 76. The drive unit 77 moves the nozzle 71 in the horizontal direction along the guide rail B by a power source such as a motor.

  The control unit 80 supplies the first processing liquid so as to apply the first processing liquid to the peripheral portion of the surface Wa of the wafer W while controlling the rotation holding unit 20 to rotate the wafer W at the first rotation speed. Controlling the processing unit 30 to control the processing gas supply unit 50 so that the processing gas is blown to the position where the first processing liquid is applied by the first processing liquid supply unit 30, and the wafer W is larger than the first rotational speed. Controlling the second processing liquid supply unit 60 so as to supply the resist solution to the surface Wa of the wafer W while controlling the rotation holding unit 20 so as to rotate at the second number of rotations, resist solution to the wafer W The rotation holding unit 20 is controlled so that the wafer W is rotated at a third rotational speed smaller than the second rotational speed in a state where the supply of the wafer W is stopped, and the wafer W is larger than the third rotational speed. Rotation holding to rotate at the number of rotations It is configured to perform controlling the 20, in this order.

  For example, the control unit 80 includes a first supply control unit 81, a gas supply control unit 82, a second supply control unit 83, a third supply control unit 84, a conveyance control unit 85, and a rotation control unit as functional modules. 86. The first supply control unit 81 controls the first processing liquid supply unit 30 so as to apply the first processing liquid to the peripheral edge of the surface Wa of the wafer W by contact. The gas supply control unit 82 controls the processing gas supply unit 50 so that the processing gas is blown to the position where the first processing liquid supply unit 30 applied the first processing liquid. The second supply control unit 83 controls the second processing liquid supply unit 60 so as to supply the resist liquid to the surface Wa of the wafer W. The third supply control unit 84 controls the third processing liquid supply unit 70 so as to supply the pre-wet liquid to the surface Wa of the wafer W. The transfer control unit 85 controls the transfer arm A3 and the rotation holding unit 20 so as to load and unload the wafer W with respect to the liquid processing unit U1. The rotation control unit 86 controls the rotation unit 24 to rotate the wafer W at a preset target rotation number.

  As shown in FIG. 5, the control unit 80 includes a circuit 90, for example. The circuit 90 includes one or a plurality of processors 91, a memory 92, a storage 93 (recording medium), an input / output port 94, and an operation panel 95. The input / output port 94 inputs / outputs data to / from the control target. For example, the input / output port 94 outputs control signals to the valves 39, 59, 65, 75 and the drive units 41, 67, 77. The operation panel 95 is an interface for an operator, and includes a monitor such as a liquid crystal and an input device such as a button. The operation panel 95 may be a touch panel in which a monitor and an input device are integrated.

  The storage 93 stores a program for causing the coating / developing apparatus 2 to execute various substrate processing methods. The storage 93 may be anything as long as it can be read by a computer. Specific examples include a hard disk, a nonvolatile semiconductor memory, a magnetic disk, and an optical disk. The memory 92 temporarily stores the program loaded from the storage 93, the calculation result of the processor 91, and the like. The processor 91 executes a program in cooperation with the memory 92. Thereby, each function of the control unit 80 is realized. That is, each functional block of the control unit 80 is realized.

  Note that the hardware configuration of the control unit 80 is not necessarily limited to the configuration of each functional module by a program. For example, each functional module of the control unit 80 may be configured by a dedicated logic circuit or an ASIC (Application Specific Integrated Circuit) in which the functional modules are integrated.

[Substrate processing method]
Next, as an example of the substrate processing method, a film forming procedure by the liquid processing unit U1 will be described.

  As shown in FIG. 6, first, the control unit 80 executes step S01. In step S01, the transfer control unit 85 controls the transfer arm A3 and the rotation holding unit 20 so as to load the wafer W into the liquid processing unit U1. Specifically, the transfer control unit 85 controls the elevating unit 26 so as to raise the holding unit 22 to the outside of the cup 28, and controls the transfer arm A 3 so as to place the wafer W on the holding unit 22. The holding unit 22 is controlled to suck the placed wafer W, and the elevating unit 26 is controlled to lower the wafer W into the cup 28.

  Next, the control unit 80 executes Step S02. In step S02, the rotation control unit 86 controls the rotation unit 24 to rotate the wafer W to be processed at the first rotation number ω1. The first rotation speed ω1 is, for example, 0 to 50 rpm.

  Next, the control unit 80 executes Step S03. In step S03, as shown in FIG. 7A, the first supply controller 81 applies the first treatment liquid P so that the first treatment liquid P is applied to the peripheral edge of the surface Wa of the wafer W by contact. 30 is controlled. For example, the first supply control unit 81 controls the driving unit 41 so that the chip 33 of the liquid delivery unit 31 is brought into contact with the peripheral edge of the surface Wa of the wafer W. The ball 34 of the chip 33 rotates in contact with the peripheral edge of the wafer W. In response to this, the first processing liquid P in the storage portion 32 is sent out and applied to the peripheral portion of the surface Wa of the wafer W. The first supply control unit 81 controls the pump 38 and the valve 39 so as to send the first processing liquid P from the liquid source 36 to the storage unit 32. As a result, the first processing liquid P is replenished to the storage unit 32. Further, in step S03, the gas supply controller 82 causes the processing gas G to be blown from the inner peripheral side of the wafer W to the position where the first processing liquid supply unit 30 has applied the first processing liquid P. The supply unit 50 is controlled. The gas supply control unit 82 controls the processing gas supply unit 50 to open the valve 59. Thereby, the discharge of the processing gas G from the nozzle 51 is started. The processing gas G discharged from the nozzle 51 is sprayed from the inner peripheral side of the wafer W to the position where the first processing liquid supply unit 30 applied the first processing liquid P. As a result, the first processing liquid P is thinly and uniformly applied to the peripheral edge of the wafer W.

  The first supply control unit 81 controls the first processing liquid supply unit 30 so as to continue application of the first processing liquid until the wafer W rotates at least once. Meanwhile, the gas supply control unit 82 also controls the processing gas supply unit 50 so as to continue the supply of the processing gas G (see FIG. 7B). Thereby, as shown in FIG. 8, a water repellent treatment is performed over the entire periphery of the peripheral portion of the surface Wa, and an annular water repellent portion C is formed.

  Next, the control unit 80 executes Step S04. In step S04, the rotation control unit 86 controls the rotation unit 24 to change the rotation number of the wafer W from the first rotation number ω1 to the second rotation number ω2. FIG. 12 is a graph showing the transition of the rotation speed of the wafer W. In FIG. 12, times t1 to t2 correspond to the execution period of step S04. As shown in FIG. 12, the second rotational speed ω2 is larger than the first rotational speed ω1. The second rotation speed ω2 is, for example, 50 to 200 rpm.

  Next, the control part 80 performs step S05. In step S05, the third supply control unit 84 controls the third processing liquid supply unit 70 so as to supply the pre-wet liquid to the central portion of the surface Wa of the wafer W. Thereafter, the second supply control unit 83 controls the second processing solution supply unit 60 so as to supply the resist solution to the central portion of the surface Wa of the wafer W.

  For example, the third supply control unit 84 controls the drive unit 77 so as to dispose the nozzle 71 above the center portion of the surface Wa, and then supplies the pre-wet liquid S from the liquid source 72 to the nozzle 71. And the valve 75 is controlled. As a result, as shown in FIG. 9A, the pre-wet liquid S is discharged from the nozzle 71 and supplied to the central portion of the surface Wa. The supplied pre-wet liquid S spreads around the outer periphery of the wafer W according to the rotation of the wafer W and scatters around the wafer W (see FIG. 9B).

  When the discharge of the preset amount is completed, the third supply control unit 84 controls the pump 74 and the valve 75 so as to stop the supply of the pre-wet liquid S from the liquid source 72 to the nozzle 71. Thereafter, the third supply control unit 84 controls the drive unit 77 so as to retract the nozzle 71 from above the surface Wa.

  The second supply control unit 83 controls the driving unit 67 so that the nozzle 61 is disposed above the center of the surface Wa, and then supplies the resist solution R from the liquid source 62 to the nozzle 61 with a pump 64 and a valve. 65 is controlled. Thus, as shown in FIG. 10A, the resist solution R is discharged from the nozzle 61 and supplied to the central portion of the surface Wa. The supplied resist solution R spreads around the outer periphery of the wafer W according to the rotation of the wafer W while being guided by the pre-wet solution S. In this way, the pre-wet liquid S promotes the spread of the resist liquid R.

  The second supply control unit 83 controls the second processing liquid supply unit 60 so as to continue the supply of the resist solution R until the resist solution R has sufficiently spread over the surface Wa. Thereby, the liquid film F of the resist liquid R is formed on the surface Wa (see FIG. 10B).

  The resist solution R that has reached the water repellent portion C of the surface Wa due to the rotation of the wafer W is peeled off from the surface Wa due to the water repellency of the water repellent portion C and scattered around the wafer W (see FIG. 10B). . Thereby, the liquid film F at the peripheral edge of the surface Wa is removed. That is, the resist film before drying is removed.

  When the discharge of the preset amount is completed, the second supply control unit 83 controls the pump 64 and the valve 65 so as to stop the supply of the resist solution R from the liquid source 62 to the nozzle 61 ((( c)).

  Next, the control unit 80 executes Step S06. In step S06, the rotation control unit 86 controls the rotation unit 24 to change the rotation number of the wafer W from the second rotation number ω2 to the third rotation number ω3 (see FIG. 12). In FIG. 12, times t3 to t4 correspond to the execution period of step S06. As shown in FIG. 12, the third rotational speed ω3 is smaller than the second rotational speed ω2. The third rotation speed ω3 is, for example, 500 to 2000 rpm. Note that the control unit 80 may execute step S06 prior to the completion of step S05. That is, the control unit 80 may execute step S06 while the supply of the resist solution R by the second processing solution supply unit 60 is continued.

  When the rotational speed of the wafer W is decreased from the second rotational speed ω2 to the third rotational speed ω3, the resist solution R that is biased toward the peripheral edge of the liquid film F by the centrifugal force of the second rotational speed ω2 is on the center side of the wafer W. Return to. For example, as shown in FIG. 11A, on the surface Wa of the rotating wafer W, the resist solution R is biased toward the peripheral edge of the liquid film F by centrifugal force. Thereby, the protrusion H is formed in the peripheral part of the liquid film F. When the rotational speed of the wafer W is reduced, the biased resist solution R (resist solution R of the bump H) returns to the center side of the wafer W. Thereby, the uniformity of the film thickness of the liquid film F is improved.

  The speed change rate from the second rotational speed ω2 to the third rotational speed ω3 may be larger than the speed change rate from the first rotational speed ω1 to the second rotational speed ω2. The speed change rate from the first rotation speed ω1 to the second rotation speed ω2 is, for example, 10000 rpm / s, and the speed change rate from the second rotation speed ω2 to the third rotation speed ω3 is, for example, 30000 rpm / s. The speed change rate is a value obtained by dividing the absolute value of the speed change amount by the change time. By increasing the rate of change in speed from the second rotational speed ω2 to the third rotational speed ω3, the centrifugal force acting on the resist solution R that is biased toward the peripheral edge of the liquid film F changes suddenly. As a result, the resist solution R that is biased toward the peripheral edge of the liquid film F is more likely to return to the center side of the wafer W. For this reason, the uniformity of the film thickness of the liquid film F is further improved.

  After execution of step S06, the control unit 80 waits for the elapse of a predetermined time (step S07). The predetermined time is, for example, 2.5 seconds. Thereby, the uniformity of the film thickness of the liquid film F is further improved.

  Next, the control unit 80 executes Step S08. In step S08, the rotation control unit 86 controls the rotation unit 24 to change the rotation number of the wafer W from the third rotation number ω3 to the fourth rotation number ω4 (see FIG. 12). In FIG. 12, times t5 to t6 correspond to the execution period of step S08. As shown in FIG. 12, the fourth rotational speed ω4 is larger than the third rotational speed ω3. The fourth rotational speed ω4 may be smaller than the second rotational speed ω2. The fourth rotation speed ω4 is, for example, 500 to 1500 rpm. As the rotation speed of the wafer W increases from the third rotation speed ω3 to the fourth rotation speed ω4, drying of the liquid film F is promoted.

  Further, the speed change rate from the third rotational speed ω3 to the fourth rotational speed ω4 may be smaller than the speed change rate from the second rotational speed ω2 to the third rotational speed ω3. The speed change rate from the third rotation speed ω3 to the fourth rotation speed ω4 is, for example, 10,000 rpm / s. That is, the speed change rate from the second speed to the third speed is both the speed change rate from the first speed to the second speed and the speed change rate from the third speed to the fourth speed. It may be larger than that. In this case, the resist solution R that is biased toward the peripheral edge of the liquid film F is more likely to return to the center side of the wafer W. For this reason, the uniformity of the film thickness of the liquid film F is further improved.

  After execution of step S08, the control unit 80 waits for the elapse of a predetermined time (step S09). The predetermined time is, for example, 15 seconds. Thereby, the liquid film F dries and the resist agent film L is formed (see FIG. 10D).

  Next, the control part 80 performs step S10. In step S <b> 10, the rotation control unit 86 controls the rotation unit 24 so as to end the rotation of the wafer W.

  Next, the control part 80 performs step S11. In step S11, the transfer control unit 85 controls the holding unit 22, the elevating unit 26, and the transfer arm A3 so that the wafer W is unloaded from the liquid processing unit U1. Specifically, the transfer control unit 85 controls the elevating unit 26 so as to raise the holding unit 22 to the outside of the cup 28, controls the holding unit 22 so as to release the adsorption of the wafer W, and holds the wafer W. The transport arm A3 is controlled so as to be received from the unit 22 and carried out, and the elevating unit 26 is controlled so as to lower the holding unit 22 into the cup 28.

  Thus, the film forming procedure by the liquid processing unit U1 is completed. In addition, the film processing procedure by the liquid processing unit U1 may further include supplying a solvent to the water repellent part C after the film is formed. In this case, the resist agent remaining in the water repellent part C can be more reliably removed. That is, the removal of the coating L at the peripheral edge of the surface Wa can be made more reliable.

  The liquid processing unit U1 described above applies the first holding liquid 20 for holding and rotating the wafer W and the first processing liquid P for water repellent treatment to the peripheral edge of the surface Wa of the wafer W by contact. A processing gas supply unit 30, a processing gas supply unit 50 that blows a processing gas G from the inner peripheral side of the wafer W to the position where the first processing liquid supply unit 30 applied the first processing liquid P, and a film forming unit And a second processing liquid supply unit 60 for supplying the resist liquid R to the surface Wa of the wafer W.

  According to the liquid processing unit U1, the first processing liquid P is applied by the first processing liquid supply unit 30 and the peripheral portion of the wafer W is subjected to water repellent treatment, and then the resist solution R is applied while rotating the wafer W. By supplying and spreading the resist solution R on the surface Wa of the wafer W, the liquid film F is formed on the surface Wa of the wafer W, and the coating film L can be formed by drying it. The resist solution R that has reached the peripheral edge of the wafer W due to the rotation of the wafer W is peeled off from the wafer W by water repellent treatment that has been applied in advance, and is scattered around. Thereby, the liquid film F at the peripheral edge of the wafer W is removed. That is, the coating L before drying is removed. For this reason, the peripheral part of the film L can be removed with a simple configuration without dissolving and re-curing the film L.

  In the processing described above, the first processing liquid supply unit 30 applies the first processing liquid P by contact. For this reason, compared with the structure which supplies the 1st process liquid P from the position away from the surface Wa of the wafer W like dispersion | distribution etc., the 1st process liquid P is scattered to parts other than the part which should perform a water-repellent process, for example. Can be suppressed. For this reason, the formation defect of the film L resulting from scattering of the 1st process liquid P can be prevented reliably.

  Since the liquid processing unit U1 includes the processing gas supply unit 50 in addition to the first processing liquid supply unit 30, the inside of the wafer W with respect to the position where the first processing liquid supply unit 30 applied the first processing liquid P. The processing gas G can be sprayed from the peripheral side. As a result, the first processing liquid P is applied thinly and without spots on the peripheral edge of the wafer W in a state where the spread of the first processing liquid P toward the inner peripheral side of the wafer W is suppressed. For this reason, it is possible to remove the liquid film F from the peripheral portion of the wafer W more reliably by performing water-repellent treatment on the peripheral portion of the wafer W without any spots.

  While controlling the rotation holding unit 20 to rotate the wafer W at the first rotation speed ω1, the first processing liquid supply unit 30 is applied so as to apply the first processing liquid P to the peripheral edge of the surface Wa of the wafer W. Controlling and controlling the processing gas supply unit 50 so that the processing gas G is blown to the position where the first processing liquid P is applied by the first processing liquid supply unit 30, and the wafer W is larger than the first rotational speed ω1. Controlling the second processing liquid supply unit 60 so as to supply the resist solution R to the surface Wa of the wafer W while controlling the rotation holding unit 20 to rotate at the second rotation speed ω2, In a state where the supply of the resist solution R is stopped, the rotation holding unit 20 is controlled to rotate the wafer W at the third rotation speed ω3 smaller than the second rotation speed ω2, and the wafer W is moved to the third rotation speed. Rotates at a fourth rotational speed ω4 greater than ω3 Spin holder to control 20 may be further provided with a control unit 80 configured to execute in order to cause.

  In this case, when the first processing liquid P is applied, the wafer W rotates at the first rotation speed ω1, so that the water repellent treatment can be performed over the entire periphery of the peripheral portion of the wafer W. Further, since the processing gas G is sprayed immediately on the place where the first processing liquid P is applied, the water repellent process can be performed on the peripheral portion of the wafer W without any spots. When the second processing liquid supply unit 60 supplies the resist solution R, the wafer W rotates at a second rotational speed ω2 that is larger than the first rotational speed ω1, so that the resist liquid R is more reliably generated by the centrifugal force. It is spread on. Further, the resist solution R on the peripheral edge of the wafer W is more reliably scattered. Thereby, the liquid film F on the peripheral edge of the wafer W can be more reliably removed. After the supply of the resist solution R is stopped, the rotation speed of the wafer W shifts to the fourth rotation speed ω4. By continuing the rotation of the wafer W at the fourth rotation speed ω4, the liquid film on the wafer W is dried and the coating L is formed. The rotational speed of the wafer W temporarily decreases to the third rotational speed ω3 while shifting from the second rotational speed ω2 to the fourth rotational speed ω4. As a result, the resist solution R biased toward the peripheral edge of the liquid film F by the centrifugal force at the second rotational speed ω2 returns to the center side of the wafer W, so that the bias of the resist solution R in the liquid film F before drying is alleviated. The Therefore, the uniformity of the film thickness can be improved. The number of rotations of the wafer W may be appropriately set based on, for example, the characteristics of the first processing liquid P and the viscosity of the resist liquid R. Further, the rotation speed of the wafer W may be appropriately set based on, for example, the supply amount of each processing liquid per unit time.

  The fourth rotational speed ω4 may be smaller than the second rotational speed ω2. In this case, the unevenness of the resist solution R in the liquid film F before drying can be further suppressed, and the film thickness uniformity can be further improved.

  The controller 80 has a speed change rate from the second rotational speed ω2 to the third rotational speed ω3, a speed change rate from the first rotational speed ω1 to the second rotational speed ω2, and a third rotational speed ω3 to the fourth rotational speed. You may control the rotation holding | maintenance part 20 so that it may become large compared with the speed change rate to (omega) 4.

  In this case, when the rotational speed of the wafer W changes suddenly when the second rotational speed ω2 is shifted to the third rotational speed ω3, the resist biased toward the peripheral portion of the liquid film F due to the centrifugal force of the second rotational speed ω2. The liquid R returns more reliably to the center side of the wafer W. Therefore, the uniformity of the film thickness can be further improved.

  Although the embodiment has been described above, the present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the invention.

  For example, the configuration of the liquid processing unit U1 described above can also be applied to the liquid processing unit U1 of the processing module 14. In this case, the water repellent portion C is formed at the peripheral portion of the surface Wa when the lower layer film is formed. With this water repellent film, the coating L before drying can be removed even in the process of forming the resist film. Further, the substrate to be processed is not limited to a semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, or an FPD (Flat Panel Display).

  DESCRIPTION OF SYMBOLS 20 ... Rotation holding part, 30 ... 1st process liquid supply part, 31 ... Liquid delivery part, 32 ... Accommodating part, 33 ... Chip | tip, 35 ... Supply pipe, 36 ... Liquid source, 38 ... Pump, 39 ... Valve, 50 ... Process gas supply unit, 51 ... nozzle, 56 ... gas source, 57 ... supply pipe, 59 ... valve, 60 ... second process liquid supply unit, 70 ... third process liquid supply unit, U1 ... liquid process unit, W ... wafer .

Claims (6)

A rotation holding unit for holding and rotating the substrate;
A first treatment liquid supply section for applying a first treatment liquid for water repellent treatment to the peripheral edge of the surface of the substrate by contact;
A processing gas supply unit that blows a processing gas from an inner peripheral side of the substrate to a position where the first processing liquid supply unit applies the first processing liquid;
A substrate processing apparatus comprising: a second processing liquid supply unit configured to supply a second processing liquid for film formation to the surface of the substrate. The first processing liquid supply unit is controlled so as to apply the first processing liquid to the peripheral edge of the surface of the substrate while controlling the rotation holding unit to rotate the substrate at a first rotation number. Controlling the processing gas supply unit to spray the processing gas to a position where the first processing liquid is applied by the first processing liquid supply unit;
The second processing liquid is supplied so as to supply the second processing liquid to the surface of the substrate while controlling the rotation holding unit so as to rotate the substrate at a second rotational speed larger than the first rotational speed. Controlling the supply section,
Controlling the rotation holding unit to rotate the substrate at a third rotational speed smaller than the second rotational speed in a state where the supply of the second treatment liquid to the substrate is stopped;
2. The control unit according to claim 1, further comprising a control unit configured to sequentially control the rotation holding unit to rotate the substrate at a fourth rotation number larger than the third rotation number. Substrate processing equipment.   The substrate processing apparatus according to claim 2, wherein the fourth rotation number is smaller than the second rotation number.   The control unit has a speed change rate from the second rotation speed to the third rotation speed, a speed change rate from the first rotation speed to the second rotation speed, and the third rotation speed to the fourth rotation. The substrate processing apparatus according to claim 2, wherein the rotation holding unit is controlled to be larger than a rate of change in speed to a number. Applying a first treatment liquid for water repellent treatment to the peripheral edge of the surface of the substrate by contact;
Spraying a processing gas from the inner peripheral side of the substrate to the position where the first processing liquid is applied;
A substrate processing method comprising: supplying a second processing liquid for forming a film to the surface of the substrate while rotating the substrate.   A computer-readable recording medium having recorded thereon a program for causing a substrate processing apparatus to execute the substrate processing method according to claim 5.

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