JP2017022254A - Abrasive pad and manufacturing method thereof - Google Patents

Abrasive pad and manufacturing method thereof Download PDF

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JP2017022254A
JP2017022254A JP2015138489A JP2015138489A JP2017022254A JP 2017022254 A JP2017022254 A JP 2017022254A JP 2015138489 A JP2015138489 A JP 2015138489A JP 2015138489 A JP2015138489 A JP 2015138489A JP 2017022254 A JP2017022254 A JP 2017022254A
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polishing
abrasive
artificial leather
polishing pad
hardness
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JP6247254B2 (en
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政道 樅山
Masamichi Momiyama
政道 樅山
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POBAALE KOGYO KK
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Abstract

PROBLEM TO BE SOLVED: To provide an abrasive pad capable of flattening a processing surface and accelerating a polishing speed in a chemical mechanical polishing of a silicon carbide substrate.SOLUTION: The abrasive pad is used for chemical mechanical polishing of a silicon carbide substrate. The abrasive pad includes: a first abrasive material 10 including artificial leather and a polymer elastic body immersed in the artificial leather; and a second abrasive material 20 which is composed of an adhesive for adhering the first abrasive materials 10 with each other and of which the hardness is higher than that of the first abrasive material 10. On an abrasive surface 30 of the abrasive pad, abrasive surfaces of the first abrasive materials 10 and abrasive surfaces of the second abrasive materials 20 are disposed alternately.SELECTED DRAWING: Figure 1

Description

本発明は、化学機械研磨に用いられる研磨パッド及びその製造方法に関し、特に炭化ケイ素基板の化学機械研磨に好適な研磨パッド及びその製造方法に関する。   The present invention relates to a polishing pad used for chemical mechanical polishing and a method for manufacturing the same, and more particularly to a polishing pad suitable for chemical mechanical polishing of a silicon carbide substrate and a method for manufacturing the same.

従来、キャリアに保持された加工物を定盤上に貼り付けられた研磨パッドの研磨面に接触させ、研磨面の上にスラリーを流しながらキャリアと定盤を同時に回転させて加工物の研磨を行う化学機械研磨が知られている。   Conventionally, a workpiece held on a carrier is brought into contact with a polishing surface of a polishing pad affixed on a surface plate, and the carrier and the surface plate are simultaneously rotated while flowing slurry on the polishing surface to polish the workpiece. Performing chemical mechanical polishing is known.

炭化ケイ素基板の研磨加工では、この化学機械研磨が利用されているが、炭化ケイ素は、非常に硬く、融点も非常に高い安定な結晶であるため、スラリー中の固体成分(砥粒)による機械的作用とスラリー中の液体成分による化学的作用の相互作用を用いてもケイ素面を高効率に研磨することが困難であった。   This chemical mechanical polishing is used for polishing a silicon carbide substrate. However, since silicon carbide is a stable crystal that is very hard and has a very high melting point, it is a machine that uses solid components (abrasive grains) in the slurry. It was difficult to polish the silicon surface with high efficiency even when the interaction between the chemical action and the chemical action of the liquid component in the slurry was used.

例えば、下記特許文献1には、化学機械研磨によって炭化ケイ素基板を研磨加工した実施例が開示されているが、研磨レートは150nm/時よりも低い。   For example, Patent Document 1 below discloses an example in which a silicon carbide substrate is polished by chemical mechanical polishing, but the polishing rate is lower than 150 nm / hour.

化学機械研磨に用いられる研磨パッドとしては、人工皮革からなる研磨パッドが知られている。例えば、下記特許文献2は、不織布と、該不織布に含浸される高分子弾性体とを含む人工皮革で構成される研磨パッドを開示している。   As a polishing pad used for chemical mechanical polishing, a polishing pad made of artificial leather is known. For example, Patent Document 2 below discloses a polishing pad made of artificial leather including a nonwoven fabric and a polymer elastic body impregnated in the nonwoven fabric.

人工皮革は、概して剛性が低く、柔軟性を有し、表面が滑らかである。したがって、人工皮革を研磨パッドとして応用するには、下記特許文献2に記載されているように、研磨パッドの研磨面に機械的な摩擦力や研磨力を付与するために、研磨面の繊維を起毛させる処理を施す必要があった。   Artificial leather is generally low in rigidity, flexible, and has a smooth surface. Therefore, in order to apply artificial leather as a polishing pad, as described in Patent Document 2 below, in order to impart mechanical frictional force and polishing force to the polishing surface of the polishing pad, fibers on the polishing surface are used. It was necessary to perform a raising process.

人工皮革からなる従来の研磨パッドを炭化ケイ素基板の化学機械研磨に適用した場合には、研磨パッドが柔軟であるため、加工面にスクラッチが生じ難いという利点がある。しかしながら、研磨パッドの剛性が低いため、平坦な面が得難く、研磨速度が遅いという欠点があった。   When a conventional polishing pad made of artificial leather is applied to chemical mechanical polishing of a silicon carbide substrate, there is an advantage that scratches are hardly generated on the processed surface because the polishing pad is flexible. However, since the polishing pad has low rigidity, it is difficult to obtain a flat surface and the polishing rate is low.

人工皮革からなる研磨パッドの硬度を高める方法としては、人工皮革を圧縮するプレス加工が知られている(下記特許文献3参照)。しかしながら、人工皮革を圧縮することによってパッド内部の空隙が減少又は縮小するため、スラリーの保持性能が低下するという問題があった。したがって、炭化ケイ素基板の化学機械研磨においては、研磨パッドの剛性を単に高くしただけでは、加工面の平坦度及び研磨速度の向上を図ることが困難であった。   As a method for increasing the hardness of a polishing pad made of artificial leather, press working for compressing artificial leather is known (see Patent Document 3 below). However, there is a problem in that the retention performance of the slurry is lowered because the space inside the pad is reduced or reduced by compressing the artificial leather. Therefore, in chemical mechanical polishing of a silicon carbide substrate, it has been difficult to improve the flatness of the processed surface and the polishing rate simply by increasing the rigidity of the polishing pad.

特開2015−084432号公報Japanese Patent Laying-Open No. 2015-084432 特開2012−214944号公報JP 2012-214944 A 特開2008−302454号公報JP 2008-302454 A

本発明が解決しようとする課題は、炭化ケイ素基板の化学機械研磨において、加工面の平坦度及び研磨速度を向上させ得る研磨パッド及びその製造方法を提供することである。   The problem to be solved by the present invention is to provide a polishing pad capable of improving the flatness and polishing rate of a processed surface and the manufacturing method thereof in chemical mechanical polishing of a silicon carbide substrate.

上記課題を解決するため、本発明は、以下の研磨パッド及びその製造方法を提供する。
1.炭化ケイ素基板の化学機械研磨に用いられる研磨パッドであって、
人工皮革及び該人工皮革に含浸される高分子弾性体を含む第1の研磨材と、
第1の研磨材同士を接着する接着剤からなり、第1の研磨材よりも硬度が高い第2の研磨材とを含み、
研磨パッドの研磨面に第1の研磨材の研磨面及び第2の研磨材の研磨面が交互に配置されていることを特徴とする研磨パッド。
2.第1の研磨材の研磨面が前記人工皮革の表面と交わる切断面であることを特徴とする前記1に記載の研磨パッド。
3.第1の研磨材の硬度がASKER C 75〜85の範囲内であることを特徴とする前記1に記載の研磨パッド。
4.第2の研磨材の硬度がASKER C 90〜98の範囲内であることを特徴とする前記1に記載の研磨パッド。
5.第2の研磨材同士の間隔が0.5mm〜5.0mmの範囲内であることを特徴とする前記1に記載の研磨パッド。
6.炭化ケイ素基板の化学機械研磨に用いられる研磨パッドの製造方法であって、
人工皮革を切断して複数の一次材料を形成し、
各一次材料に高分子弾性体を含浸して複数の二次材料を形成し、
各二次材料の表面及び/又は裏面に接着剤を塗布し、二次材料同士を前記接着剤で接着して積層体を形成し、
前記積層体を切断して二次材料からなる第1の層と前記接着剤からなる第2の層が交互に配置された切断面からなる研磨面を形成する工程を含む方法。
In order to solve the above problems, the present invention provides the following polishing pad and a method for producing the same.
1. A polishing pad used for chemical mechanical polishing of a silicon carbide substrate,
A first abrasive comprising an artificial leather and a polymer elastic body impregnated in the artificial leather;
It consists of an adhesive that bonds the first abrasives together, and includes a second abrasive that has higher hardness than the first abrasives,
A polishing pad, wherein the polishing surface of the first polishing material and the polishing surface of the second polishing material are alternately arranged on the polishing surface of the polishing pad.
2. 2. The polishing pad according to 1 above, wherein the polishing surface of the first abrasive is a cut surface that intersects the surface of the artificial leather.
3. The polishing pad according to 1 above, wherein the hardness of the first abrasive is in the range of ASKER C 75-85.
4). 2. The polishing pad according to 1 above, wherein the hardness of the second abrasive is in the range of ASKER C 90-98.
5. 2. The polishing pad according to 1 above, wherein the distance between the second abrasives is in the range of 0.5 mm to 5.0 mm.
6). A method of manufacturing a polishing pad used for chemical mechanical polishing of a silicon carbide substrate,
Cutting artificial leather to form multiple primary materials,
Each primary material is impregnated with a polymer elastic body to form a plurality of secondary materials,
Applying an adhesive to the surface and / or back of each secondary material, and bonding the secondary materials with the adhesive to form a laminate,
A method comprising a step of cutting the laminated body to form a polished surface having a cut surface in which a first layer made of a secondary material and a second layer made of the adhesive are alternately arranged.

本発明によれば、研磨パッドの研磨面に第1の研磨材の研磨面と第1の研磨材よりも硬度が高い第2の研磨材の研磨面が交互に配置されているため、第1の研磨材と第2の研磨材の相互作用によって、スクラッチの発生を抑制しながら加工面の平坦度及び研磨速度を向上させ得る。また、本発明によれば、第1の研磨材が人工皮革に含浸される高分子弾性体を含むため、スラリーの保持性能を低下させることなく、炭化ケイ素基板の研磨加工に適した硬度を得ることが可能である。さらに、本発明によれば、第1の研磨材の研磨面が人工皮革の表面と交わる切断面であるため、研磨面に露出する繊維が多く存在し、それにより、機械的な摩擦力や研磨力を向上させることが可能である。また、このような切断面からなる研磨面では、人工皮革の繊維が適度に起毛しているので、起毛処理を行う必要がないという利点もある。   According to the present invention, the polishing surface of the first polishing material and the polishing surface of the second polishing material having higher hardness than the first polishing material are alternately arranged on the polishing surface of the polishing pad. Due to the interaction between the abrasive and the second abrasive, the flatness of the processed surface and the polishing rate can be improved while suppressing the generation of scratches. Further, according to the present invention, since the first abrasive material includes a polymer elastic body impregnated in artificial leather, the hardness suitable for the polishing process of the silicon carbide substrate can be obtained without deteriorating the slurry holding performance. It is possible. Furthermore, according to the present invention, since the polishing surface of the first abrasive is a cut surface that intersects the surface of the artificial leather, there are a lot of fibers exposed to the polishing surface. It is possible to improve the power. In addition, the polished surface having such a cut surface has an advantage that the fibers of the artificial leather are raised appropriately, so that it is not necessary to perform the raising treatment.

図1は、本発明の実施例の斜視図である。FIG. 1 is a perspective view of an embodiment of the present invention. 図2は、本発明の実施例の模式的な部分断面図である。FIG. 2 is a schematic partial sectional view of an embodiment of the present invention. 図3は、二次材料の表面(人工皮革の表面側)に対して略平行に積層体を切断したときの二次材料の切断面の顕微鏡写真である。FIG. 3 is a photomicrograph of the cut surface of the secondary material when the laminate is cut substantially parallel to the surface of the secondary material (the surface side of the artificial leather). 図4は、二次材料の表面(人工皮革の表面側)に対して略垂直に積層体を切断したときの二次材料の切断面(第1の研磨材の研磨面)の顕微鏡写真である。FIG. 4 is a photomicrograph of the cut surface of the secondary material (the polished surface of the first abrasive) when the laminate is cut substantially perpendicular to the surface of the secondary material (the surface side of the artificial leather). . 図5は、本発明の実施例の製造方法を説明するための図である。FIG. 5 is a diagram for explaining the manufacturing method of the embodiment of the present invention.

以下、本発明の一実施形態を図面を参照しながら具体的に説明するが、本発明の技術的範囲は以下の説明の内容に限定されるものではない。   DESCRIPTION OF EMBODIMENTS Hereinafter, an embodiment of the present invention will be specifically described with reference to the drawings. However, the technical scope of the present invention is not limited to the contents of the following description.

図1に示したように、本発明に係る研磨パッドは、第1の研磨材10及び第2の研磨材20を有して構成される。   As shown in FIG. 1, the polishing pad according to the present invention includes a first abrasive 10 and a second abrasive 20.

第1の研磨材10は、人工皮革と、該人工皮革に含浸される高分子弾性体とを含んで構成される。   The first abrasive 10 includes artificial leather and a polymer elastic body impregnated in the artificial leather.

人工皮革は、ナイロン繊維などの合成繊維を原料とする不織布にポリウレタンなどの合成樹脂を含浸させたものである。人工皮革は、市販されているものを利用することができ、人工皮革の構成は特に限定されない。人工皮革は、内部により多くの空隙を有するものを採用することが好ましい。人工皮革の硬度は、ASKER C 60〜70の範囲内であることが好ましく、ASKER C 62〜68の範囲内であることがさらに好ましい。   Artificial leather is obtained by impregnating a non-woven fabric made of synthetic fibers such as nylon fibers with a synthetic resin such as polyurethane. A commercially available artificial leather can be used, and the structure of the artificial leather is not particularly limited. It is preferable to employ an artificial leather having more voids inside. The hardness of the artificial leather is preferably in the range of ASKER C 60-70, and more preferably in the range of ASKER C 62-68.

高分子弾性体は、第1の研磨材10の硬度を高めるために人工皮革に含浸される。高分子弾性体は、人工皮革の内部の空隙に付与されるが、付与後に空隙が残存するように人工皮革に含浸される。高分子弾性体の具体例としては、ポリウレタン系エラストマーなどが挙げられるが、これに限定されない。   The polymer elastic body is impregnated in artificial leather in order to increase the hardness of the first abrasive 10. The polymer elastic body is applied to the voids inside the artificial leather, but is impregnated into the artificial leather so that the voids remain after the application. Specific examples of the polymer elastic body include, but are not limited to, polyurethane elastomers.

高分子弾性体が含浸された第1の研磨材10の硬度は、ASKER C 75〜85の範囲内であることが好ましく、ASKER C 77〜83の範囲内であることがさらに好ましい。第1の研磨材10の硬度がASKER C 75よりも低い場合は研磨効率が低下する一方、ASKER C 85よりも高い場合はスクラッチが発生し易くなる。   The hardness of the first abrasive 10 impregnated with the polymer elastic body is preferably in the range of ASKER C 75 to 85, and more preferably in the range of ASKER C 77 to 83. When the hardness of the first abrasive 10 is lower than ASKER C 75, the polishing efficiency is lowered. On the other hand, when the hardness is higher than ASKER C 85, scratches are likely to occur.

高分子弾性体は、スラリーに含まれる液体成分に対して耐性を示すものを採用することが好ましい。人工皮革に高分子弾性体を含浸させることによって、不織布に含浸された合成樹脂を高分子弾性体でコーティングすることになる。したがって、人工皮革に耐薬品性を有する高分子弾性体を含浸させることによって、不織布に含浸された合成樹脂がスラリーに含まれる液体成分に対して耐性を示さない場合でも、第1の研磨材10の耐薬品性を向上させることが可能になる。   It is preferable to employ a polymer elastic body that exhibits resistance to the liquid component contained in the slurry. By impregnating the artificial leather with the polymer elastic body, the synthetic resin impregnated in the nonwoven fabric is coated with the polymer elastic body. Therefore, even if the synthetic resin impregnated in the nonwoven fabric does not show resistance to the liquid component contained in the slurry by impregnating the artificial leather with a polymer elastic body having chemical resistance, the first abrasive 10 It becomes possible to improve the chemical resistance.

第2の研磨材20は、接着剤を硬化させたものである。第2の研磨材20の基材である接着剤の具体例としては、ウレタン系接着剤などが挙げられるが、これに限定されない。第2の研磨材20の硬度は、ASKER C 90〜98の範囲内であることが好ましく、ASKER C 92〜96の範囲内であることがさらに好ましい。   The second abrasive 20 is obtained by curing an adhesive. Specific examples of the adhesive that is the base material of the second abrasive 20 include, but are not limited to, urethane adhesives. The hardness of the second abrasive 20 is preferably in the range of ASKER C 90-98, and more preferably in the range of ASKER C 92-96.

第1の研磨材10と第2の研磨材20は、研磨パッドの研磨面30において交互に配置される。第2の研磨材20の幅(厚さ)は、40μm〜300μmの範囲内であるが、これに限定されない。第2の研磨材20同士の間隔(この間隔は、第1の研磨材10の幅(厚さ)とほぼ等しい)は、0.5mm〜5.0mmの範囲内であることが好ましく、0.5mm〜3.0mmの範囲内であることがさらに好ましく、0.5mm〜1.5mmの範囲内であることが最も好ましい。この間隔が狭いほど研磨速度が向上する傾向にある。   The first abrasive 10 and the second abrasive 20 are alternately arranged on the polishing surface 30 of the polishing pad. The width (thickness) of the second abrasive 20 is in the range of 40 μm to 300 μm, but is not limited thereto. The interval between the second abrasives 20 (this interval is substantially equal to the width (thickness) of the first abrasive 10) is preferably in the range of 0.5 mm to 5.0 mm. More preferably, it is in the range of 5 mm to 3.0 mm, and most preferably in the range of 0.5 mm to 1.5 mm. As this interval is narrower, the polishing rate tends to be improved.

第1の研磨材10の研磨面は、人工皮革の表面と交わる切断面であることが好ましい。この切断面は、人工皮革の表面と裏面との間を縦断するように人工皮革を切断したときに現れる断面である。   The polished surface of the first abrasive 10 is preferably a cut surface that intersects the surface of the artificial leather. This cut surface is a cross section that appears when the artificial leather is cut so as to cut vertically between the front and back surfaces of the artificial leather.

人工皮革(一次材料)に高分子弾性体を含浸させたもの(二次材料)の表面(人工皮革の表面側)に対して略平行に後述する積層体を切断したときの二次材料の切断面は、繊維の上に、不織布に含浸された合成樹脂だけでなく、人工皮革に含浸された高分子弾性体も堆積しているので、切断面に露出する繊維が少なく、また、繊維が到伏している(図3参照)。   Cutting the secondary material when cutting the laminated body, which will be described later, approximately parallel to the surface of the artificial leather (primary material) impregnated with an elastic polymer (secondary material) (surface side of the artificial leather) Since not only the synthetic resin impregnated in the nonwoven fabric but also the polymer elastic body impregnated in the artificial leather is deposited on the surface, there are few fibers exposed to the cut surface, and the fiber reaches the surface. They are lying down (see Fig. 3).

これに対し、上記の切断面は、図4に示されるように、その面に露出する繊維が非常に多く、しかも繊維が起きているので、機械的な摩擦力や研磨力を向上させることができ、研磨面として好適である。また、この切断面には、図4に示されるように、スラリーを効果的に保持し得る空隙がより多く存在するため、スラリーの保持性能も向上させることが可能である。   On the other hand, as shown in FIG. 4, the cut surface has a large amount of fibers exposed to the surface, and the fibers are raised, so that the mechanical frictional force and polishing force can be improved. And is suitable as a polished surface. In addition, as shown in FIG. 4, there are more voids that can effectively hold the slurry, as shown in FIG. 4, and thus the slurry holding performance can be improved.

本発明に係る研磨パッドにおいて、第1の研磨材10は、第2の研磨材20よりも硬度が低く、その上、研磨面30に露出する繊維が多いため、主として、加工面を平滑にし、スクラッチの発生を抑制する磨き作用を加工面に及ぼしていると考えられる。一方、第2の研磨材20は、第1の研磨材10よりも硬度が高いため、主として、加工面を削る研ぎ作用を加工面に及ぼしていると考えられる。そして、本発明に係る研磨パッドは、後述するように、研磨面30に交互に配置された第1の研磨材10の研磨面と第2の研磨材20の研磨面の相互作用によって、スクラッチの発生を抑制しながら加工面の平坦度及び研磨速度を従来技術よりも格段に向上させることが可能である。   In the polishing pad according to the present invention, the first abrasive 10 has a lower hardness than the second abrasive 20, and more fibers are exposed on the polishing surface 30, so that the processed surface is mainly smooth, It is thought that the polishing surface which suppresses generation | occurrence | production of a scratch is exerted on the processed surface. On the other hand, since the second abrasive 20 has a higher hardness than the first abrasive 10, it is considered that the second abrasive 20 mainly exerts a sharpening action on the machined surface on the machined surface. As will be described later, the polishing pad according to the present invention has scratches caused by the interaction between the polishing surfaces of the first polishing material 10 and the polishing surface of the second polishing material 20 alternately arranged on the polishing surface 30. It is possible to significantly improve the flatness and polishing rate of the processed surface as compared with the prior art while suppressing the occurrence.

研磨パッドの研磨面30には、研磨面30全体にスラリーを行き渡らせるための溝40が形成されている(図1及び図2参照)。研磨パッドの裏面側には、研磨パッドを研磨装置の定盤に固定するための両面テープ50が設けられている(図1及び図2参照)。   On the polishing surface 30 of the polishing pad, a groove 40 is formed for spreading the slurry over the entire polishing surface 30 (see FIGS. 1 and 2). A double-sided tape 50 for fixing the polishing pad to the surface plate of the polishing apparatus is provided on the back side of the polishing pad (see FIGS. 1 and 2).

次に、本発明に係る研磨パッドの製造方法の一例を説明する。   Next, an example of a method for manufacturing a polishing pad according to the present invention will be described.

(1)一次材料の形成
まず、原材料である人工皮革を切断することによって、複数の一次材料を形成する(図5参照)。一次材料は、人工皮革の切断片である。この工程では、原材料である人工皮革の表面と裏面との間を縦断するように人工皮革が切断される。
(1) Formation of primary material First, a plurality of primary materials are formed by cutting artificial leather as a raw material (see FIG. 5). The primary material is a cut piece of artificial leather. In this step, the artificial leather is cut so as to cut vertically between the front and back surfaces of the artificial leather, which is a raw material.

(2)二次材料の形成
次に、一次材料に高分子弾性体を含浸して、複数の二次材料を形成する(図5参照)。二次材料は、人工皮革の切断片に高分子弾性体を含浸させたものである。この工程では、例えば、一次材料をポリウレタン系エラストマー溶液に浸漬し、次いで、エラストマーを凝固させることによって、二次材料が形成される。この方法によれば、人工皮革を圧縮しないで第1の研磨材10の硬度を高めることができる。したがって、この方法によって製造された第1の研磨材10は、人工皮革を圧縮する方法で製造されたものよりも多くの又は大きい空隙が内部に残存しているので、スラリーの保持性能が高い。
(2) Formation of Secondary Material Next, the primary material is impregnated with a polymer elastic body to form a plurality of secondary materials (see FIG. 5). The secondary material is obtained by impregnating a cut piece of artificial leather with a polymer elastic body. In this step, for example, the secondary material is formed by immersing the primary material in a polyurethane-based elastomer solution and then coagulating the elastomer. According to this method, the hardness of the first abrasive 10 can be increased without compressing the artificial leather. Therefore, since the first abrasive 10 manufactured by this method has more or larger voids left inside than the one manufactured by the method of compressing artificial leather, the slurry holding performance is high.

(3)積層体の形成
次に、複数の二次材料のそれぞれの表面及び/又は裏面に接着剤を塗布し、その接着剤で二次材料同士を接着して積層体を形成する(図5参照)。積層体は、接着強度を高めるために加圧されてもよい。
(3) Formation of Laminate Next, an adhesive is applied to each of the front and / or back surfaces of a plurality of secondary materials, and the secondary materials are bonded together with the adhesive to form a laminate (FIG. 5). reference). The laminate may be pressurized to increase the adhesive strength.

(4)研磨面を有する三次材料の形成
次に、積層体を切断して、切断面からなる研磨面30を有する三次材料を形成する。このとき、積層体は、研磨面30に二次材料からなる層(第1の研磨材10)と接着剤からなる層(第2の研磨材20)が交互に配置されるように切断される。このように積層体が切断されることによって、研磨面30には、第1の研磨材10の研磨面と第2の研磨材20の研磨面が存在することになる。三次材料の裏面(研磨面30と反対の面)には、両面テープ50が貼付される。
(4) Formation of tertiary material having polished surface Next, the laminate is cut to form a tertiary material having the polished surface 30 formed of the cut surface. At this time, the laminate is cut so that the layer made of the secondary material (first abrasive 10) and the layer made of the adhesive (second abrasive 20) are alternately arranged on the polishing surface 30. . By cutting the laminate in this manner, the polishing surface 30 has the polishing surface of the first abrasive 10 and the polishing surface of the second abrasive 20. Double-sided tape 50 is affixed to the back surface of the tertiary material (the surface opposite to the polishing surface 30).

(5)溝の形成
次に、三次材料の研磨面30に溝40が形成される。溝40は、プレス加工又は切削加工によって形成することができる。
(5) Formation of Groove Next, the groove 40 is formed on the polishing surface 30 of the tertiary material. The groove 40 can be formed by pressing or cutting.

(6)成形
最後に、プレス加工などにより、三次材料を円形に成形して、研磨パッドが完成する。
(6) Molding Finally, the tertiary material is molded into a circular shape by pressing or the like to complete the polishing pad.

上記した製造方法によって本発明の実施例を製造した。なお、人工皮革は、商品名「クラリーノ(登録商標)」(株式会社クラレから入手可能)を使用した。この人工皮革の硬度は、ASKER C 65(平均値)であった。   The Example of this invention was manufactured with the above-described manufacturing method. In addition, the brand name "Clarino (registered trademark)" (available from Kuraray Co., Ltd.) was used as the artificial leather. The hardness of this artificial leather was ASKER C 65 (average value).

実施例の第1の研磨材10の硬度は、ASKER C 79(平均値)であり、第2の研磨材20の硬度は、ASKER C 94(平均値)であった。第2の研磨材20同士の間隔は、実施例1が1.15mmであり、実施例2が2.3mmであった。   The hardness of the first abrasive 10 of the example was ASKER C 79 (average value), and the hardness of the second abrasive 20 was ASKER C 94 (average value). The spacing between the second abrasives 20 was 1.15 mm in Example 1 and 2.3 mm in Example 2.

直径810mmの実施例を両面テープ50で研磨装置(スピードファム株式会社製32SP AW(片面研磨装置))の定盤に貼り付けて化学機械研磨を実施した。加工物は、直径3インチ(76.2mm)の炭化ケイ素(4H−SiC)基板である。加工面は、ケイ素面である。定盤及びキャリアの回転数は50rpmに設定し、圧力は715g/cm(約70kPa)に設定した。コロイダルシリカを砥粒として含むスラリーを使用した。スラリーの流量は、毎分50mLであった。結果を表1に示す。 An example having a diameter of 810 mm was attached to a surface plate of a polishing apparatus (32SP AW (single-side polishing apparatus) manufactured by Speedfam Co., Ltd.) with a double-sided tape 50 and chemical mechanical polishing was performed. The workpiece is a 3 inch (76.2 mm) diameter silicon carbide (4H—SiC) substrate. The processed surface is a silicon surface. The rotation speed of the surface plate and the carrier was set to 50 rpm, and the pressure was set to 715 g / cm 2 (about 70 kPa). A slurry containing colloidal silica as abrasive grains was used. The slurry flow rate was 50 mL per minute. The results are shown in Table 1.

Figure 2017022254
Figure 2017022254

表1に示されるように、実施例1及び2を使用した化学機械研磨では、研磨速度が従来技術の2倍以上であった。また、表面粗さ(Ra)も0.05nm未満で非常に良好であり、高い平坦度が得られた。加工後に、加工面を光学顕微鏡で観察したところ、スクラッチも発見されなかった。   As shown in Table 1, in the chemical mechanical polishing using Examples 1 and 2, the polishing rate was twice or more that of the prior art. Also, the surface roughness (Ra) was very good at less than 0.05 nm, and high flatness was obtained. When the processed surface was observed with an optical microscope after processing, no scratch was found.

本発明に係る研磨パッドは、炭化ケイ素基板だけでなく、サファイア基板、窒化ガリウム基板などの化学機械研磨に対しても好適に使用し得る。   The polishing pad according to the present invention can be suitably used not only for silicon carbide substrates but also for chemical mechanical polishing of sapphire substrates, gallium nitride substrates, and the like.

10 第1の研磨材
20 第2の研磨材
30 研磨パッドの研磨面
40 溝
50 両面テープ
DESCRIPTION OF SYMBOLS 10 1st abrasive material 20 2nd abrasive material 30 Polishing surface of polishing pad 40 Groove 50 Double-sided tape

Claims (6)

炭化ケイ素基板の化学機械研磨に用いられる研磨パッドであって、
人工皮革及び該人工皮革に含浸される高分子弾性体を含む第1の研磨材と、
第1の研磨材同士を接着する接着剤からなり、第1の研磨材よりも硬度が高い第2の研磨材とを含み、
研磨パッドの研磨面に第1の研磨材の研磨面及び第2の研磨材の研磨面が交互に配置されていることを特徴とする研磨パッド。
A polishing pad used for chemical mechanical polishing of a silicon carbide substrate,
A first abrasive comprising an artificial leather and a polymer elastic body impregnated in the artificial leather;
It consists of an adhesive that bonds the first abrasives together, and includes a second abrasive that has higher hardness than the first abrasives,
A polishing pad, wherein the polishing surface of the first polishing material and the polishing surface of the second polishing material are alternately arranged on the polishing surface of the polishing pad.
第1の研磨材の研磨面が前記人工皮革の表面と交わる切断面であることを特徴とする請求項1に記載の研磨パッド。   The polishing pad according to claim 1, wherein the polishing surface of the first abrasive is a cut surface that intersects the surface of the artificial leather. 第1の研磨材の硬度がASKER C 75〜85の範囲内であることを特徴とする請求項1に記載の研磨パッド。   The polishing pad according to claim 1, wherein the hardness of the first abrasive is in the range of ASKER C 75-85. 第2の研磨材の硬度がASKER C 90〜98の範囲内であることを特徴とする請求項1に記載の研磨パッド。   The polishing pad according to claim 1, wherein the hardness of the second abrasive is in the range of ASKER C 90-98. 第2の研磨材同士の間隔が0.5mm〜5.0mmの範囲内であることを特徴とする請求項1に記載の研磨パッド。   The polishing pad according to claim 1, wherein an interval between the second abrasives is in a range of 0.5 mm to 5.0 mm. 炭化ケイ素基板の化学機械研磨に用いられる研磨パッドの製造方法であって、
人工皮革を切断して複数の一次材料を形成し、
各一次材料に高分子弾性体を含浸して複数の二次材料を形成し、
各二次材料の表面及び/又は裏面に接着剤を塗布し、二次材料同士を前記接着剤で接着して積層体を形成し、
前記積層体を切断して二次材料からなる第1の層と前記接着剤からなる第2の層が交互に配置された切断面からなる研磨面を形成する工程を含む方法。
A method of manufacturing a polishing pad used for chemical mechanical polishing of a silicon carbide substrate,
Cutting artificial leather to form multiple primary materials,
Each primary material is impregnated with a polymer elastic body to form a plurality of secondary materials,
Applying an adhesive to the surface and / or back of each secondary material, and bonding the secondary materials with the adhesive to form a laminate,
A method comprising a step of cutting the laminated body to form a polished surface having a cut surface in which a first layer made of a secondary material and a second layer made of the adhesive are alternately arranged.
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Publication number Priority date Publication date Assignee Title
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JPS52149692A (en) * 1976-06-07 1977-12-12 Kuraray Co Ltd Pad for lapping and polishing
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JP2002154060A (en) * 2000-11-20 2002-05-28 Sony Corp Polishing wheel, manufacturing method for polishing wheel and polishing method
JP2005329491A (en) * 2004-05-19 2005-12-02 Nitta Haas Inc Abrasive cloth for finishing polishing
JP2012049477A (en) * 2010-08-30 2012-03-08 Kuraray Co Ltd Polishing method of compound semiconductor wafer

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Publication number Priority date Publication date Assignee Title
JPS52149692A (en) * 1976-06-07 1977-12-12 Kuraray Co Ltd Pad for lapping and polishing
JPH10249711A (en) * 1997-03-17 1998-09-22 Internatl Business Mach Corp <Ibm> Composite abrasive pad for cmp
JP2002154060A (en) * 2000-11-20 2002-05-28 Sony Corp Polishing wheel, manufacturing method for polishing wheel and polishing method
JP2005329491A (en) * 2004-05-19 2005-12-02 Nitta Haas Inc Abrasive cloth for finishing polishing
JP2012049477A (en) * 2010-08-30 2012-03-08 Kuraray Co Ltd Polishing method of compound semiconductor wafer

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113165141A (en) * 2018-11-29 2021-07-23 株式会社大辉 Polishing pad and method for manufacturing the same

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