JP2017022085A - 薄膜固体電池の製造方法 - Google Patents
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- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000010409 thin film Substances 0.000 title claims abstract description 43
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims abstract description 93
- 229910052744 lithium Inorganic materials 0.000 claims abstract description 93
- 239000000463 material Substances 0.000 claims abstract description 37
- 238000006138 lithiation reaction Methods 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000007784 solid electrolyte Substances 0.000 claims abstract description 20
- HBBGRARXTFLTSG-UHFFFAOYSA-N Lithium ion Chemical compound [Li+] HBBGRARXTFLTSG-UHFFFAOYSA-N 0.000 claims abstract description 17
- 229910001416 lithium ion Inorganic materials 0.000 claims abstract description 17
- 239000000203 mixture Substances 0.000 claims description 85
- 238000004519 manufacturing process Methods 0.000 claims description 48
- 239000007787 solid Substances 0.000 claims description 33
- 239000002001 electrolyte material Substances 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 13
- 238000003746 solid phase reaction Methods 0.000 claims description 13
- 238000010030 laminating Methods 0.000 claims description 12
- 239000007772 electrode material Substances 0.000 claims description 9
- 229910018068 Li 2 O Inorganic materials 0.000 claims description 8
- 238000011282 treatment Methods 0.000 claims description 7
- 230000001939 inductive effect Effects 0.000 claims description 3
- 239000007791 liquid phase Substances 0.000 claims description 2
- 239000003792 electrolyte Substances 0.000 abstract description 30
- 150000001875 compounds Chemical class 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 230000008021 deposition Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 description 16
- 229910015643 LiMn 2 O 4 Inorganic materials 0.000 description 11
- 229910004298 SiO 2 Inorganic materials 0.000 description 7
- 238000002474 experimental method Methods 0.000 description 7
- 238000004528 spin coating Methods 0.000 description 6
- 229910052596 spinel Inorganic materials 0.000 description 6
- 239000011029 spinel Substances 0.000 description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 5
- 229910004283 SiO 4 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 4
- 229910006137 NiGe Inorganic materials 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 3
- 238000000231 atomic layer deposition Methods 0.000 description 3
- 238000004070 electrodeposition Methods 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 239000012071 phase Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- FDLZQPXZHIFURF-UHFFFAOYSA-N [O-2].[Ti+4].[Li+] Chemical compound [O-2].[Ti+4].[Li+] FDLZQPXZHIFURF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000009396 hybridization Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 229910002102 lithium manganese oxide Inorganic materials 0.000 description 2
- VLXXBCXTUVRROQ-UHFFFAOYSA-N lithium;oxido-oxo-(oxomanganiooxy)manganese Chemical compound [Li+].[O-][Mn](=O)O[Mn]=O VLXXBCXTUVRROQ-UHFFFAOYSA-N 0.000 description 2
- NUJOXMJBOLGQSY-UHFFFAOYSA-N manganese dioxide Chemical compound O=[Mn]=O NUJOXMJBOLGQSY-UHFFFAOYSA-N 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000001308 synthesis method Methods 0.000 description 2
- 229910001936 tantalum oxide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910003289 NiMn Inorganic materials 0.000 description 1
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 238000000498 ball milling Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000007773 negative electrode material Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 239000007774 positive electrode material Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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Abstract
【解決手段】薄膜固体リチウムイオン電池第1の電極層41、固体電解質層42、及び第2の電極層43を備え、第1の電極の材料組成物を含む第1のリチウムフリー層21及び電解質の材料組成物を含む第2のリチウムフリー層22を有する原始の層構造体20を、基板上に積層するステップと、積層するステップの後に、リチオ化処理を実行するステップと、を有し、リチオ化処理を実行するステップは、第1のリチウムフリー層21及び第2のリチウムフリー層22にリチウムを取り込むことにより、第1の電極層41及び固体電解質層42を含む積層体を形成する薄膜固体リチウムイオン電池の製造する方法。
【選択図】図3
Description
Claims (11)
- 薄膜固体リチウムイオン電池の製造方法であって、
薄膜固体リチウムイオン電池は、第1の電極層、固体電解質層、および第2の電極層を備え、この製造方法は、
第1の電極の材料組成物を含む第1のリチウムフリー層および電解質の材料組成物を含む第2のリチウムフリー層を有する原始の層構造体を、基板上に積層するステップと、
前記積層するステップの後に、リチオ化処理を実行するステップとを有し、
リチオ化処理を実行するステップは、第1のリチウムフリー層および第2のリチウムフリー層にリチウムを取り込むことにより、第1の電極層および固体電解質層を含む積層体を形成することを含むことを特徴とする製造方法。 - 原始の層構造体は、第2の電極の材料組成物を含む第3のリチウムフリー層を有し、
リチオ化処理を実行するステップは、第3のリチウムフリー層にリチウムを取り込むことにより、第1の電極層、固体電解質層、および第2の電極層を含む積層体を形成することを含むことを特徴とする請求項1に記載の製造方法。 - リチオ化処理を実行するステップは、リチウム組成物を含む層を原始の層構造体上に積層した後に熱処理を実行することにより、原始の層構造体のリチウム組成物と前記リチウムフリー層との間の固相反応を誘導することを含むことを特徴とする請求項1または2に記載の製造方法。
- リチウム組成物を含む層は、Li2O層またはLi2CO3層であることを特徴とする請求項3に記載の製造方法。
- リチウム組成物を含む層を原始の層構造体上に積層するステップは、液相プロセスを用いて前記層を形成することを含むことを特徴とする請求項3または4に記載の製造方法。
- 基板は集電体を含むことを特徴とする請求項1〜5のいずれか1に記載の製造方法。
- 基板は非平面状の基板であることを特徴とする請求項1〜6のいずれか1に記載の製造方法。
- 基板は複数のマイクロ柱状物を有することを特徴とする請求項7に記載の製造方法。
- 原始の層構造体は、リチウムフリーであることを特徴とする請求項1〜8のいずれか1に記載の製造方法。
- 原始の層構造体は、第1のリチウムフリー層と第2のリチウムフリー層との間にリチウム組成物を含む層を有することを特徴とする請求項1〜8のいずれか1に記載の製造方法。
- 原始の層構造体は、第2のリチウムフリー層と第3のリチウムフリー層との間にリチウム組成物を含む層を有することを特徴とする請求項2〜8のいずれか1または請求項10に記載の製造方法。
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JP2019096610A (ja) | 2017-11-21 | 2019-06-20 | 三星電子株式会社Samsung Electronics Co.,Ltd. | 全固体二次電池およびその充電方法 |
US11824155B2 (en) | 2019-05-21 | 2023-11-21 | Samsung Electronics Co., Ltd. | All-solid lithium secondary battery and method of charging the same |
JP2021141003A (ja) * | 2020-03-07 | 2021-09-16 | エムテックスマート株式会社 | 2次電池の製造方法または2次電池 |
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