JP2017009915A - Photosensitive resin composition - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a photosensitive resin composition capable of improving controllability of a pattern profile of a sacrificial film.SOLUTION: The photosensitive resin composition is to be used to form a sacrificial film and comprises an alkali-soluble resin containing a copolymer obtained by a repeating unit derived from a norbornene monomer and a repeating unit derived from maleic acid anhydride, a photosensitive agent, and a crosslinking agent.SELECTED DRAWING: None

Description

  The present invention relates to a photosensitive resin composition, for example, a photosensitive resin composition used for forming a sacrificial film.

  The use of the photosensitive resin composition has been studied extensively. For example, Patent Document 1 describes the use of a positive photosensitive resin composition as a sacrificial layer.

  In Patent Document 1, a carboxyl group is contained at the end of the main chain and a repeating unit having a 3-membered ring and / or a 4-membered cyclic ether group is insoluble or hardly soluble in an alkaline developer. A photosensitive resin composition containing an acrylic resin that is soluble in an alkali developer by action is described. Patent Document 1 also describes a method for manufacturing a MEMS structure in which a pattern formed using the photosensitive resin composition is used as a sacrificial layer at the time of stacking the structure.

JP 2013-80203 A

  In manufacturing an electronic device, a process of forming a structure on a sacrificial film having a fine pattern and then removing the sacrificial film may be performed. From the viewpoint of forming a sacrificial film having such a fine pattern, it has been studied to form a sacrificial film using a photosensitive resin composition. On the other hand, in the sacrificial film, it is required that the pattern can be formed in various shapes from the viewpoint of improving the degree of freedom of the shape of the structure formed on the sacrificial film. However, when a sacrificial film is used using a photosensitive resin composition, it is difficult to form a pattern without rounded corners, for example. Therefore, it is required to realize a photosensitive resin composition that makes it easier to control the pattern of the sacrificial film to various shapes, that is, can improve the controllability of the pattern shape of the sacrificial film. It was.

According to the present invention,
A photosensitive resin composition used for forming a sacrificial film,
An alkali-soluble resin containing a copolymer represented by the following formula (1):
A photosensitizer,
A crosslinking agent;
The photosensitive resin composition containing is provided.

（式（１）中、ｌおよびｍはポリマー中におけるモル含有率を示し、ｌ＋ｍ≦１であり、ｎは０、１または２であり、Ｒ_１、Ｒ_２、Ｒ_３およびＲ_４はそれぞれ独立して水素または炭素数１〜３０の有機基であり、Ａは下記式（２ａ）、（２ｂ）、（２ｃ）または（２ｄ）により示される構造単位である）

(In formula (1), l and m represent the molar content in the polymer, l + m ≦ 1, n is 0, 1 or 2, and R ₁ , R ₂ , R ₃ and R ₄ are each independently Hydrogen or an organic group having 1 to 30 carbon atoms, and A is a structural unit represented by the following formula (2a), (2b), (2c) or (2d))

（式（２ａ）および式（２ｂ）中、Ｒ_５、Ｒ_６およびＲ_７は、それぞれ独立して炭素数１〜１８の有機基である）

(In Formula (2a) and Formula (2b), R ₅ , R ₆ and R ₇ are each independently an organic group having 1 to 18 carbon atoms)

  ADVANTAGE OF THE INVENTION According to this invention, the photosensitive resin composition which can improve the controllability of the pattern shape of a sacrificial film is realizable.

It is a cross-sectional schematic diagram which shows the manufacturing method of the electronic device which concerns on this embodiment. It is a cross-sectional schematic diagram which shows the manufacturing method of the electronic device which concerns on this embodiment. It is a cross-sectional schematic diagram which shows the manufacturing method of the electronic device which concerns on this embodiment. It is a cross-sectional schematic diagram which shows the sacrificial film which concerns on this embodiment.

  Hereinafter, embodiments will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.

  The photosensitive resin composition according to this embodiment is used for forming a sacrificial film. Moreover, the photosensitive resin composition contains an alkali-soluble resin containing a copolymer represented by the following formula (1), a photosensitive agent, and a crosslinking agent.

（式（１）中、ｌおよびｍはポリマー中におけるモル含有率を示し、ｌ＋ｍ≦１であり、ｎは０、１または２であり、Ｒ_１、Ｒ_２、Ｒ_３およびＲ_４はそれぞれ独立して水素または炭素数１〜３０の有機基であり、Ａは下記式（２ａ）、（２ｂ）、（２ｃ）または（２ｄ）により示される構造単位である）

(In formula (1), l and m represent the molar content in the polymer, l + m ≦ 1, n is 0, 1 or 2, and R ₁ , R ₂ , R ₃ and R ₄ are each independently Hydrogen or an organic group having 1 to 30 carbon atoms, and A is a structural unit represented by the following formula (2a), (2b), (2c) or (2d))

（式（２ａ）および式（２ｂ）中、Ｒ_５、Ｒ_６およびＲ_７は、それぞれ独立して炭素数１〜１８の有機基である）

(In Formula (2a) and Formula (2b), R ₅ , R ₆ and R ₇ are each independently an organic group having 1 to 18 carbon atoms)

  As described above, when forming a sacrificial film having a fine pattern using the photosensitive resin composition, it is difficult to form a pattern without corners. There were cases where there were restrictions. This inventor earnestly examined the composition of the photosensitive resin composition in order to more freely control the pattern shape of the sacrificial film. As a result, it has been newly found that the pattern shape of the sacrificial film can be controlled to a shape having no corners when an alkali-soluble resin containing a copolymer represented by the above formula (1) is used. Therefore, according to the present embodiment, sacrificial films having various shapes including a pattern shape with no corners can be formed. Therefore, it is possible to realize a photosensitive resin composition that can improve the controllability of the pattern shape of the sacrificial film.

  Hereinafter, a photosensitive resin composition according to the present embodiment and a method for manufacturing an electronic device using the photosensitive resin composition will be described in detail.

First, the photosensitive resin composition will be described.
The photosensitive resin composition is used for forming a sacrificial film as described above. In this embodiment, for example, a resin film formed using a photosensitive resin composition is subjected to patterning by performing exposure processing and development processing, and then the cured film obtained by curing the resin film is sacrificed. It can be used as a film. Thus, by forming a sacrificial film using the photosensitive resin composition, a sacrificial film having a fine pattern can be easily realized.

FIG. 4 is a schematic cross-sectional view showing the sacrificial film 11 according to the present embodiment.
The cross-sectional shape of the pattern formed on the sacrificial film is not particularly limited. In the present embodiment, as shown in FIG. 4A, the cross-sectional shape of the pattern formed on the sacrificial film 11 is, for example, a rounded shape with no corners between the upper surface 111 and the side surface 110 of the sacrificial film. It can have. Thereby, in the structure formed on the sacrificial film 11, it is possible to suppress the occurrence of corners where stress is likely to concentrate due to the pattern of the sacrificial film 11. For this reason, it becomes possible to improve the reliability of a structure. On the other hand, as shown in FIG. 4B, the cross-sectional shape of the pattern formed on the sacrificial film 11 may have a corner between the upper surface 111 and the side surface 110 of the sacrificial film 11, for example. . According to the photosensitive resin composition according to the present embodiment, it is possible to realize the sacrificial film 11 having patterns having such various cross-sectional shapes. Further, the cross-sectional shape of the pattern formed on the sacrificial film 11 may have a corner between the lower surface 112 and the side surface 110 of the sacrificial film, for example.
FIG. 4 illustrates the case where the sacrificial film 11 is provided on the insulating layer 4. In this case, the lower surface 112 of the sacrificial film 11 is a surface facing the insulating layer 4 in the sacrificial film 11, and the upper surface 111 is a surface opposite to the lower surface 112.

In the present embodiment, for example, after forming a structure on a sacrificial film formed using a photosensitive resin composition, the sacrificial film is removed to form a hollow region under the structure. it can. The sacrificial film can be removed by an ashing process such as plasma ashing. The structure is not particularly limited, and can constitute, for example, a component included in a MEMS (Micro Electro Mechanical Systems) device. In the present embodiment, for example, a movable part formed in the hollow region, a cover that covers the hollow region, and the like can be formed as the structure.
In addition to the above uses, by using the photosensitive resin composition of the present embodiment, it can also be used for temporary bonding with substrates, thereby producing a thin substrate and stabilizing the thin substrate. It is also possible to carry out the transfer.

The film thickness of the sacrificial film formed using the photosensitive resin composition is, for example, 0.1 μm or more and 100 μm or less, and can be set as appropriate according to the application.
For example, when a MEMS device is assumed to be manufactured, a thin film having a film thickness of 0.1 μm or more and 15 μm or less can contribute to shortening the MEMS formation process and downsizing the MEMS device. In addition, by using a thick film having a thickness of 10 μm or more and 100 μm or less, the operation region of the driving unit can be increased, and the reliability of the MEMS device can be improved.

  As described above, the photosensitive resin composition includes an alkali-soluble resin, a photosensitive agent, and a crosslinking agent. Thereby, the controllability of the pattern shape of the sacrificial film can be improved. It can also contribute to the improvement of the heat resistance of the sacrificial film.

(Alkali-soluble resin)
The alkali-soluble resin contains a copolymer represented by the following formula (1). Thereby, as above-mentioned, the photosensitive resin composition which can improve the controllability of the pattern shape of a sacrificial film is realizable. It can also contribute to the suppression of residual scum during development. In the present embodiment, for example, one or more of the copolymers represented by the following formula (1) can be contained in the alkali-soluble resin.

In the formula (1), l and m represent a molar content (molar ratio) in the copolymer, and l + m ≦ 1. Here, l and m are preferably 0.1 ≦ l ≦ 0.9 and 0.1 ≦ m ≦ 0.9. n is 0, 1 or 2. R ₁ , R ₂ , R ₃ and R ₄ are each independently hydrogen or an organic group having 1 to 30 carbon atoms. R ₁ , R ₂ , R ₃ and R ₄ may be the same as or different from each other. A is a structural unit represented by the following formula (2a), (2b), (2c) or (2d). The copolymer represented by the above formula (1) includes one or more structural units A selected from the following formulas (2a), (2b), (2c) and (2d). In this embodiment, it is preferable that at least one or more structural units A selected from the following formulas (2a), (2b) and (2c) are included. In addition, the copolymer shown by the said Formula (1) may contain other structural units other than the structural unit shown in the said Formula (1).

In formula (2a) and formula (2b), R ₅ , R ₆ and R ₇ are each independently an organic group having 1 to 18 carbon atoms.

  In the present embodiment, the copolymer represented by the above formula (1) preferably includes the structural unit A represented by the above formula (2a) and the structural unit A represented by the above formula (2c). Moreover, it is preferable that the structural unit A shown by the said Formula (2b) is further included with these. Thereby, about the photosensitive resin composition, it becomes easy to adjust the solubility to the alkali developing solution in a image development process.

In this embodiment, examples of the organic group constituting R ₁ , R ₂ , R ₃ and R ₄ include an alkyl group, an alkenyl group, an alkynyl group, an alkylidene group, an aryl group, an aralkyl group, an alkaryl group, and a cycloalkyl group. Is mentioned. Moreover, the organic group which comprises R < ₁ >, R < ₂ >, R < ₃ > and R < ₄ > may have a heterocyclic group. As the alkyl group, for example, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, neopentyl group, hexyl group, heptyl group, An octyl group, a nonyl group, and a decyl group are mentioned. Examples of the alkenyl group include allyl group, pentenyl group, and vinyl group. An ethynyl group is mentioned as an alkynyl group. Examples of the alkylidene group include a methylidene group and an ethylidene group. Examples of the aryl group include a phenyl group, a naphthyl group, and an anthracenyl group. Examples of the aralkyl group include a benzyl group and a phenethyl group. Examples of the alkaryl group include a tolyl group and a xylyl group. Examples of the cycloalkyl group include an adamantyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. Examples of the heterocyclic group include an epoxy group and an oxetanyl group.

In the above-described alkyl group, alkenyl group, alkynyl group, alkylidene group, aryl group, aralkyl group, alkaryl group, and cycloalkyl group, one or more hydrogen atoms may be substituted with a halogen atom. Examples of the halogen atom include fluorine, chlorine, bromine, and iodine. From the viewpoint of controlling the pattern shape of the sacrificial film formed using the photosensitive resin composition, any one of R ₁ , R ₂ , R ₃ and R ₄ is preferably hydrogen, and R ₁ , More preferably, R ₂ , R ₃ and R ₄ are all hydrogen.

In this embodiment, examples of the organic group constituting R ₅ , R _6, and R ₇ include an alkyl group, an alkenyl group, an alkynyl group, an alkylidene group, an aryl group, an aralkyl group, an alkaryl group, and a cycloalkyl group. . The organic group constituting R _5, R ₆ and R ₇ may have a heterocyclic group. Here, as the alkyl group, for example, methyl group, ethyl group, n-propyl group, isopropyl group, n-butyl group, isobutyl group, sec-butyl group, tert-butyl group, pentyl group, neopentyl group, hexyl group, heptyl Groups, octyl groups, nonyl groups, and decyl groups. Examples of the alkenyl group include allyl group, pentenyl group, and vinyl group. An ethynyl group is mentioned as an alkynyl group. Examples of the alkylidene group include a methylidene group and an ethylidene group. Examples of the aryl group include a phenyl group, a naphthyl group, and an anthracenyl group. Examples of the aralkyl group include a benzyl group and a phenethyl group. Examples of the alkaryl group include a tolyl group and a xylyl group. Examples of the cycloalkyl group include an adamantyl group, a cyclopentyl group, a cyclohexyl group, and a cyclooctyl group. Examples of the heterocyclic group include an epoxy group and an oxetanyl group.

  The alkyl group, alkenyl group, alkynyl group, alkylidene group, aryl group, aralkyl group, alkaryl group, cycloalkyl group, and heterocyclic group described above may have one or more hydrogen atoms substituted by halogen atoms. Good. Examples of the halogen atom include fluorine, chlorine, bromine, and iodine. Among these, a haloalkyl group in which one or more hydrogen atoms of the alkyl group are substituted with a halogen atom is preferable.

  The copolymer represented by the above formula (1) includes, for example, a repeating unit derived from a norbornene type monomer represented by the following formula (3), a repeating unit derived from maleic anhydride represented by the following formula (4), and It is preferable that is an alternating copolymer in which are alternately arranged. The copolymer represented by the above formula (1) may be a random copolymer or a block copolymer. The repeating unit derived from maleic anhydride shown in the following formula (4) is a structural unit represented by A in the above formula (1). The alkali-soluble resin may contain a monomer represented by the following formulas (3) and (4) as a low molecular weight component.

In the formula (3), n, R ₁ , R ₂ , R ₃ and R ₄ may be those exemplified in the above formula (1).

  In addition to the copolymer represented by the above formula (1), the alkali-soluble resin is, for example, an acrylic resin such as a phenol resin, a hydroxystyrene resin, a methacrylic acid resin, or a methacrylic ester resin, a polybenzoxazole precursor, and a polyimide precursor. The precursor which has amide bonds, such as these, and 1 type, or 2 or more types selected from resin obtained by carrying out dehydration ring closure of the said precursor can further be included.

  In the present embodiment, the concentration of the alkali metal contained in the alkali-soluble resin (the weight of the alkali metal with respect to the weight of the alkali-soluble resin) can be, for example, 10 ppm or less, and more preferably 5 ppm or less. Thereby, it becomes possible to improve the patterning performance of the resin film obtained using the photosensitive resin composition more effectively. Examples of the alkali metal contained in the alkali-soluble resin include Na, K, and Li. Moreover, the density | concentration of the alkali metal contained in alkali-soluble resin can be measured using a flameless atomic absorption photometer, for example. In addition, the density | concentration of the alkali metal contained in alkali-soluble resin can be implement | achieved by adjusting suitably the synthesis | combining method of alkali-soluble resin, for example.

  The content of the alkali-soluble resin is preferably 20% by weight or more, more preferably 30% by weight or more, and particularly preferably 35% by weight or more based on the entire nonvolatile components of the photosensitive resin composition. preferable. As a result, the pattern shape of the sacrificial film can be controlled more easily. Moreover, the sclerosis | hardenability of the photosensitive resin composition can be improved and the heat resistance of the permanent film formed using a photosensitive resin composition, mechanical strength, and durability can be improved. Moreover, it is preferable that content of alkali-soluble resin is 85 weight% or less with respect to the whole non volatile component of the photosensitive resin composition, It is more preferable that it is 80 weight% or less, It is 75 weight% or less. Is particularly preferred. Thereby, the resolution in lithography can be improved. Further, the remaining scum at the time of development can be more reliably suppressed.

The proportion (% by weight) of the nonvolatile component in the photosensitive resin composition can be measured, for example, as follows. First, 1.0 g of the photosensitive resin composition is weighed out as a sample in an aluminum cup whose weight (w ₀ ) has been measured. In this case, the total weight of the sample and the aluminum cup and w _1. Next, the aluminum cup is kept in a hot air dryer adjusted to 210 ° C. under normal pressure for 1 hour, and then taken out of the hot air dryer and cooled to room temperature. Next, the total weight (w ₂ ) of the cooled sample and the aluminum cup is measured. And the ratio (weight%) of the non-volatile component in the photosensitive resin composition is computed from the following formula | equation.
Nonvolatile content (% by weight) = (w ₂ −w ₀ ) / (w ₁ −w ₀ ) × 100

(Photosensitive agent)
The photosensitizer can contain, for example, a diazoquinone compound. Examples of the diazoquinone compound used as the photosensitizer include those exemplified below.

（ｎ２は、１以上４以下の整数である）

(N2 is an integer from 1 to 4)

  In each of the above compounds, Q is any one of the structures (a), (b) and (c) shown below, or a hydrogen atom. However, at least one of Q contained in each compound is any one of the structure (a), the structure (b), and the structure (c). From the viewpoint of the transparency and dielectric constant of the photosensitive resin composition, an o-naphthoquinonediazidesulfonic acid derivative in which Q is the structure (a) or the structure (b) is more preferable.

  The content of the photosensitive agent is preferably 5% by weight or more, more preferably 8% by weight or more, and particularly preferably 10% by weight or more based on the entire nonvolatile content of the photosensitive resin composition. . The content of the photosensitive agent is preferably 40% by weight or less, more preferably 35% by weight or less, and more preferably 30% by weight or less based on the entire nonvolatile content of the photosensitive resin composition. Particularly preferred. By controlling the content of the photosensitive agent in this way, it becomes possible to improve the patterning performance. It can also contribute to the suppression of residual scum during development.

(Crosslinking agent)
The photosensitive resin composition of this embodiment contains a crosslinking agent. Thereby, the controllability of the pattern shape can be improved, and the heat resistance of the cured product of the resin composition can be improved.
The cross-linking agent can include, for example, a compound having a hetero ring as a reactive group. In the present embodiment, it is more preferable that a compound having a glycidyl group or an oxetanyl group is included as a crosslinking agent. Among these, it is more preferable to include a compound having a glycidyl group from the viewpoint of reactivity with a functional group having active hydrogen such as a carboxyl group or a hydroxyl group.

  An example of the compound having a glycidyl group used as a crosslinking agent is an epoxy compound. Examples of the epoxy compound include n-butyl glycidyl ether, 2-ethoxyhexyl glycidyl ether, phenyl glycidyl ether, allyl glycidyl ether, ethylene glycol diglycidyl ether, propylene glycol diglycidyl ether, neopentyl glycol diglycidyl ether, glycerol polyglycidyl ether. Glycidyl ether such as sorbitol polyglycidyl ether, glycidyl ether of bisphenol A (or F), glycidyl ester such as adipic acid diglycidyl ester, o-phthalic acid diglycidyl ester, 3,4-epoxycyclohexylmethyl (3,4) -Epoxycyclohexane) carboxylate, 3,4-epoxy-6-methylcyclohexylmethyl (3,4-epoxy) -6-methylcyclohexane) carboxylate, bis (3,4-epoxy-6-methylcyclohexylmethyl) adipate, dicyclopentanediene oxide, bis (2,3-epoxycyclopentyl) ether, and Celoxide manufactured by Daicel Corporation 2021, celoxide 2081, ceroxide 2083, celoxide 2085, celoxide 8000, epoxide GT401, and the like, 2,2 '-((((1- (4- (2- (4- (oxiran-2-ylmethoxy) Phenyl) propan-2-yl) phenyl) ethane-1,1-diyl) bis (4,1-phenylene)) bis (oxy)) bis (methylene)) bis (oxirane) (eg Techmore VG3101L, Inc.) Printec)), Epolite Aliphatic polyglycidyl ethers such as 00MF (manufactured by Kyoeisha Chemical Industry Co., Ltd.), Epiol TMP (manufactured by NOF Corporation), 1,1,3,3,5,5-hexamethyl-1,5-bis (3 -(Oxiran-2-ylmethoxy) propyl) tri-siloxane (for example, DMS-E09 (manufactured by Gerest)) or the like can be used.

  In addition, bisphenols such as LX-01 (manufactured by Daiso Corporation), jER1001, 1002, 1003, 1004, 1007, 1009, 1010, and 828 (trade names; manufactured by Mitsubishi Chemical Corporation) A type epoxy compound, bisphenol F type epoxy compound such as jER807 (trade name; manufactured by Mitsubishi Chemical Corporation), jER152, 154 (trade name; manufactured by Mitsubishi Chemical Corporation), EPPN201, 202 (product name: Japan) Phenol novolac type epoxy compounds such as Kayaku Co., Ltd., EOCN102, 103S, 104S, 1020, 1025, 1027 (trade name; manufactured by Nippon Kayaku Co., Ltd.), jER157S70 (trade name; Mitsubishi Chemical Corporation) )) Cresol novolac epoxy compounds, Araldite CY179, 184 (trade name) Huntsman Advanced Materials), ERL-4206, 4221, 4234, 4299 (trade name; manufactured by Dow Chemical Co.), Epicron 200, 400 (trade name; manufactured by DIC Corporation), jER871, 872 (trade name; Cycloaliphatic epoxy compounds such as Mitsubishi Chemical Co., Ltd., Poly [(2-oxylanyl) -1,2-cyclohexanediol] 2-ethyl-2- (hydroxymethyl) -1,3-propandiol ether (3: 1) A polyfunctional alicyclic epoxy compound such as EHPE-3150 (manufactured by Daicel Corporation) can also be used. Among these, from the viewpoint of improving the balance between the controllability of the pattern shape of the sacrificial film and the heat resistance of the sacrificial film, it is preferable to include a bisphenol type epoxy compound, and more preferably to include a bisphenol A type epoxy compound. . The photosensitive resin composition in the present embodiment can contain one or more of the epoxy compounds exemplified above.

  Examples of the compound having an oxetanyl group used as a crosslinking agent include 1,4-bis {[(3-ethyl-3-oxetanyl) methoxy] methyl} benzene, bis [1-ethyl (3-oxetanyl)] methyl ether, 4 , 4′-bis [(3-ethyl-3-oxetanyl) methoxymethyl] biphenyl, 4,4′-bis (3-ethyl-3-oxetanylmethoxy) biphenyl, ethylene glycol bis (3-ethyl-3-oxetanylmethyl) ) Ether, diethylene glycol bis (3-ethyl-3-oxetanylmethyl) ether, bis (3-ethyl-3-oxetanylmethyl) diphenate, trimethylolpropane tris (3-ethyl-3-oxetanylmethyl) ether, pentaerythritol tetrakis ( 3-ethyl-3-oki Tanylmethyl) ether, poly [[3-[(3-ethyl-3-oxetanyl) methoxy] propyl] silasesquioxane] derivatives, oxetanyl silicate, phenol novolac oxetane, 1,3-bis [(3-ethyloxetane-3 -Yl) methoxy] benzene and the like, but are not limited thereto. These may be used alone or in combination.

  In the present embodiment, the crosslinking agent can include, for example, a first epoxy compound having two or more glycidyl groups and a second epoxy compound different from the first epoxy compound and having three or more glycidyl groups. . Thus, by including both the first epoxy compound and the second epoxy compound, it is possible to more effectively improve the balance between the controllability of the pattern shape of the sacrificial film and the heat resistance of the sacrificial film. From the viewpoint of further improving the balance between the controllability of the pattern shape of the sacrificial film and the heat resistance of the sacrificial film, it is particularly preferable that the first epoxy compound has only two glycidyl groups. Further, the second epoxy compound can have only three glycidyl groups, for example. The cross-linking agent may further contain another epoxy compound different from the first epoxy compound and the second epoxy compound.

The first epoxy compound is preferably a bisphenol type epoxy compound exemplified by a bisphenol A type epoxy compound and a bisphenol F type epoxy compound. Thereby, the controllability of the pattern shape of the sacrificial film can be improved more effectively. In this embodiment, the case where the first epoxy compound is a bisphenol A type epoxy compound is an example of a particularly preferable embodiment from the viewpoint of improving the controllability of the pattern shape of the sacrificial film.
Further, the first epoxy compound can be, for example, an aliphatic epoxy compound. As a result, the sacrificial film can be removed more easily.
Examples of this aliphatic epoxy compound include triglycidyl ether of trimethylolpropane, triglycidyl ether of glycerin, diglycidyl ether of polyethylene glycol, 2-ethylhexyl glycidyl ether, diglycidyl ether of pentaerythritol, dipentaerythritol Examples thereof include, but are not limited to, diglycidyl ether 3 ′, 4′-epoxycyclohexylmethyl 3,4-epoxycyclohexanecarboxylate, bicyclohexyl diepoxide, and the like.

  In the case where the crosslinking agent includes the first epoxy compound and the second epoxy compound, the content of the first epoxy compound with respect to the entire crosslinking agent is preferably 0.1% by weight or more, and more preferably 2% by weight or more. preferable. Thereby, the balance between the controllability of the pattern shape of the sacrificial film, the heat resistance of the sacrificial film, and the chemical resistance of the sacrificial film can be effectively improved. On the other hand, when the crosslinking agent includes the first epoxy compound and the second epoxy compound, the content of the first epoxy compound with respect to the entire crosslinking agent is preferably 90% by weight or less, and 85% by weight or less. More preferred. Thereby, the controllability of the pattern shape of the sacrificial film can be improved.

  In the case where the crosslinking agent includes the first epoxy compound and the second epoxy compound, the content of the second epoxy compound with respect to the entire crosslinking agent is preferably 40% by weight or more, and more preferably 45% by weight or more. preferable. Thereby, the heat resistance, chemical resistance and strength of the sacrificial film can be improved more effectively. On the other hand, when the crosslinking agent includes the first epoxy compound and the second epoxy compound, the content of the second epoxy compound with respect to the entire crosslinking agent is preferably 98% by weight or less, and 95% by weight or less. More preferred. This makes it easier to control the pattern shape of the sacrificial film.

Moreover, in this embodiment, the epoxy compound used as a crosslinking agent has few dimers and trimers, and it is preferable that a monomer becomes a main component. More specifically, it is preferable that the monomer component is contained in the epoxy compound at 80 mol% or more, more preferably 85 mol% or more, and 90 mol% or more. Further preferred.
Further, the crosslinking agent used in the present embodiment preferably has a controlled number average molecular weight, and the weight average molecular weight is preferably 1000 or less, more preferably 800 or less, and 600 More preferably, it is as follows.

  The content of the crosslinking agent is preferably 15% by weight or more, more preferably 20% by weight or more, and particularly preferably 25% by weight or more based on the entire nonvolatile content of the photosensitive resin composition. . Thereby, the balance between the controllability of the pattern shape of the sacrificial film and the heat resistance of the sacrificial film can be improved more effectively. Moreover, it is preferable that content of a crosslinking agent is 45 weight% or less with respect to the whole non volatile matter of the photosensitive resin composition, and it is more preferable that it is 40 mass% or less. Thereby, the improvement of patterning performance can be aimed at. In addition, it is possible to more reliably suppress scum remaining during development.

(Other ingredients)
The photosensitive resin composition is one or more selected from the above-mentioned components, for example, an acid generator that generates an acid by light or heat, a curing agent, a surfactant, an adhesion assistant, a sensitizer, and a filler. Two or more kinds may be further included. Acid generators that generate an acid by light include, for example, compounds such as sulfonium salts, diazonium salts, ammonium salts, phosphonium salts, iodonium salts, quinonediazides, diazomethanes, sulfonate esters, disulfones, or triazines. Can do. The acid generator that generates an acid by heat can include, for example, an aromatic sulfonium salt. The curing agent is not particularly limited as long as it accelerates the reaction between the crosslinking agent and other components, such as a crosslinking reaction occurring between the alkali-soluble resin and the crosslinking agent. For example, a heterocyclic five-membered ring compound containing nitrogen, or A compound that generates an acid by heat can be included. The surfactant can include, for example, a compound containing a fluorine group such as a fluorinated alkyl group or a silanol group, or a compound having a siloxane bond as a main skeleton. The adhesion assistant can contain various silane compounds such as epoxy silane, mercapto silane, amino silane, alkyl silane, ureido silane, vinyl silane, and methacryl silane. Sensitizers can include, for example, anthracenes, xanthones, anthraquinones, phenanthrenes, chrysene, benzpyrenes, fluoracenes, rubrenes, pyrenes, indanthrines or thioxanthen-9-ones . The filler can contain 1 type, or 2 or more types selected from inorganic fillers, such as a silica, for example.

(solvent)
The photosensitive resin composition can contain a solvent, for example. In this case, the photosensitive resin composition is varnished. Examples of the solvent include propylene glycol monomethyl ether (PGME), propylene glycol monomethyl ether acetate (PGMEA), ethyl lactate, methyl isobutyl carbinol (MIBC), gamma butyrolactone (GBL), N-methylpyrrolidone (NMP), methyl n-amyl ketone. One or more of (MAK), diethylene glycol monomethyl ether, diethylene glycol dimethyl ether, diethylene glycol methyl ethyl ether, and benzyl alcohol can be included. In addition, the solvent which can be used in this embodiment is not limited to these. Among these, it is particularly preferable that propylene glycol monomethyl ether acetate is contained from the viewpoint of stably performing exposure and development processing.

In the photosensitive resin composition according to the present embodiment, the ashing speed calculated by the following measurement method is, for example, 0.08 μm / min or more. Thereby, it can suppress more reliably that an ashing residue remains when removing a sacrificial film by an ashing process. For this reason, it becomes possible to contribute to the improvement of the reliability of the obtained electronic device.
<Measurement method>
First, a photosensitive resin composition is applied onto a silicon wafer by a spin method, and then heat-treated at 100 ° C. for 120 seconds to obtain a resin film having a thickness of 6 μm. Next, after the resin film was cured at 280 ° C. for 2 hours, O ₂ ashing treatment (1000 W, O ₂ = 500 sccm, treatment time 10 minutes, treatment start temperature = 90 ° C., interelectrode distance = 10 cm, apparatus AP-1000 [manufactured by March Plasma System Inc.]). Next, the ashing speed (μm / min) is calculated based on the film thickness reduction obtained in this way.
In the present embodiment, a value obtained by dividing the film thickness reduction amount of the cured film by the O ₂ ashing process by the ashing process time can be calculated as the ashing speed.

The upper limit of the ashing speed is not particularly limited, but can be, for example, 1.0 μm / min. By controlling the upper limit of the ashing speed in this way, the control becomes easier when the sacrificial film is removed, which can contribute to the improvement of process efficiency.
The ashing speed can be controlled by adjusting the composition and blending ratio of the photosensitive resin composition. For example, it is considered important to appropriately select the type of the alkali-soluble resin and appropriately adjust the blending ratio of the alkali-soluble resin, the crosslinking agent, and the photosensitizer.

  Next, an example of the manufacturing method of the electronic device 100 using the sacrificial film formed using the photosensitive resin composition will be described.

The method for manufacturing the electronic device 100 according to the present embodiment can be performed, for example, as follows. First, a resin film is formed on a substrate using a photosensitive resin composition. Next, the resin film is patterned by exposure and development. Next, the resin film after patterning is cured to form a sacrificial film. Next, a structure is formed on the sacrificial film. Next, the sacrificial film is removed. In this way, the electronic device 100 in which a hollow region is formed under the structure can be manufactured.
Hereinafter, a method for manufacturing the electronic device 100 will be described in detail.

1 to 3 are schematic cross-sectional views illustrating a method for manufacturing the electronic device 100 according to the present embodiment.
First, as shown in FIG. 1A, a substrate 1 is prepared. The substrate 1 can be, for example, a silicon substrate, a glass substrate, or a sapphire substrate. In the present embodiment, for example, a wafer-like silicon substrate can be adopted as the substrate 1.

In the example shown in FIG. 1A, an insulating layer 2 is formed on a substrate 1. The insulating layer 2 is composed of one or more of inorganic insulating films exemplified by, for example, a silicon oxide film, a silicon nitride film, and an aluminum oxide film. The method for forming the insulating layer 2 is not particularly limited, and examples thereof include a CVD (Chemical Vapor Deposition) method. Note that another insulating layer or wiring may be formed between the substrate 1 and the insulating layer 2.
In the example shown in FIG. 1A, the wiring 3 is formed on the insulating layer 2. The material constituting the wiring 3 is not particularly limited as long as it is a conductive material. In the present embodiment, the wiring 3 can be made of one or more of metal materials exemplified by aluminum, copper, and gold. The film thickness of the wiring 3 can be, for example, 100 nm or more and 10 μm or less. The wiring 3 can be formed using, for example, a sputtering method or an etching method.

  Further, as shown in FIG. 1B, in the method for manufacturing the electronic device 100 according to the present embodiment, the insulating layer 4 may be provided on the insulating layer 2 and the wiring 3. The insulating layer 4 is composed of one or more of inorganic insulating films exemplified by, for example, a silicon oxide film, a silicon nitride film, and an aluminum oxide film. A method for forming the insulating layer 4 is not particularly limited, and examples thereof include a CVD method.

  Next, as shown in FIG.1 (c), the resin film 10 is formed on the board | substrate 1 using the photosensitive resin composition. FIG. 1C illustrates the case where the resin film 10 is formed on the insulating layer 4 provided on the substrate 1. On the other hand, the resin film 10 may be provided on the substrate 1 so as to be in contact with the substrate 1.

In the present embodiment, for example, the resin film 10 can be formed by applying a photosensitive resin composition and then pre-baking the coating film formed thereby. Pre-baking with respect to the coating film can be performed, for example, by heating the coating film under conditions of a temperature of 60 ° C. to 150 ° C. and a time of 30 seconds to 600 seconds.
As a method for applying the photosensitive resin composition, for example, a spin coating method, a spray coating method, a dipping method, a printing method, or a roll coating method can be employed. Among these, when the spin coating method is employed, the number of rotations is preferably 500 rpm or more, and more preferably 700 rpm or more. Further, the rotational speed of the spin coating method is preferably, for example, 10,000 rpm or less, and more preferably 5000 rpm or less. The rotation time of the spin coating method is, for example, preferably 1 second or longer, and more preferably 5 seconds or longer. The rotation time of the spin coating method is preferably, for example, 120 seconds or less, and more preferably 60 seconds or less. By appropriately adjusting each of these conditions in the spin coating method, it becomes easy to control the film thickness of the photosensitive resin composition within a desired numerical range.

  The film thickness of the resin film 10 formed using the photosensitive resin composition is, for example, not less than 0.1 μm and not more than 100 μm. Thereby, it becomes easy to set the film thickness of the sacrificial film obtained by curing the resin film 10 within a desired numerical range. For this reason, for example, it becomes possible to form a sacrificial film having a film thickness particularly suitable for forming a MEMS device.

  Next, as shown in FIG. 2D, the resin film 10 is patterned by exposure and development. In the present embodiment, for example, a portion of the resin film 10 located in a region where a hollow region is formed can be left and other portions can be removed.

  Although the light source used for the exposure with respect to the resin film 10 is not specifically limited, For example, an ultraviolet-ray or visible light etc. can be used. Further, for the development of the resin film 10, for example, an alkaline developer is used. Examples of the alkaline developer include inorganic alkalis such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium silicate, sodium metasilicate, and aqueous ammonia, and primary amines such as ethylamine and n-propylamine. Secondary amines such as diethylamine and di-n-propylamine; tertiary amines such as triethylamine and methyldiethylamine; alcohol amines such as dimethylethanolamine and triethanolamine; tetramethylammonium hydroxide; And aqueous solutions exemplified by quaternary ammonium salts such as tetraethylammonium hydroxide, etc., and those obtained by adding water-soluble organic solvents and surfactants exemplified by alcohols such as methanol and ethanol to this aqueous solution It is possible. The alkaline developer may contain one or more of these.

  In the present embodiment, the cross-sectional shape of the pattern formed on the resin film 10 by patterning can be, for example, a rounded shape with no corners between the upper surface and the side surface of the resin film 10. As a result, the cross-sectional shape of the pattern of the sacrificial film 11 obtained using the resin film 10 also has a rounded shape with no corners between the upper surface and the side surface of the sacrificial film 11. On the other hand, the cross-sectional shape of the pattern formed on the resin film 10 may have, for example, a corner between the upper surface and the side surface of the resin film. In this case, the cross-sectional shape of the pattern of the sacrificial film 11 obtained using the resin film 10 also has a corner between the upper surface and the side surface of the sacrificial film 11. In addition, the cross-sectional shape of the pattern formed in the resin film 10 can be controlled by adjusting the number of functional groups of the epoxy group and the blending amount thereof.

  Next, as shown in FIG. 2E, the patterned resin film 10 is cured to form a sacrificial film 11. In the present embodiment, the sacrificial film 11 can be formed, for example, by heating and thermosetting the resin film 10. The heating temperature for heating and curing the resin film 10 is preferably 160 ° C. or higher and 380 ° C. or lower, for example, and more preferably 180 ° C. or higher and 350 ° C. or lower. Moreover, when heating, it is also a preferable aspect to flow an inert gas such as nitrogen in the heating device to suppress oxidation of the film of the photosensitive resin composition.

  Next, a structure is formed on the sacrificial film 11. In the example shown in FIG. 2F, the insulating layer 30 is formed on the sacrificial film 11 as the structure. The insulating layer 30 is formed so as to cover the upper surface and side surfaces of the sacrificial film 11. Thereby, a hollow region is constituted by the region surrounded by the insulating layer 30 and the substrate 1. The insulating layer 30 is composed of one or more of inorganic insulating films exemplified by a silicon oxide film, a silicon nitride film, an aluminum oxide film, and the like. A method for forming the insulating layer 30 is not particularly limited, and examples thereof include a CVD method. Note that a portion of the insulating layer 30 that does not contact the hollow region may be removed by etching or may remain.

  Next, the sacrificial film 11 is removed. As a result, a hollow region is formed in the region where the sacrificial film 11 was present. The sacrificial film 11 is removed by an ashing process such as plasma ashing. The gas used in plasma ashing is not particularly limited, and examples thereof include oxygen gas and ozone gas.

  In the present embodiment, the sacrificial film 11 is removed, for example, as follows. First, as shown in FIG. 3G, the insulating layer 30 is etched to form openings in the insulating layer 30. Next, as shown in FIG. 3H, the sacrificial film 11 is removed through the opening. As described above, the sacrificial film 11 is removed by, for example, an ashing process. Thereby, the ashed sacrificial film 11 is discharged out of the region covered with the insulating layer 30 through the opening. In this way, the sacrificial film 11 is removed, and a hollow region covered with the insulating layer 30 is formed.

  In the present embodiment, for example, as shown in FIG. 3I, an insulating layer 40 covering at least the upper surface of the insulating layer 30 can be formed so as to close the opening. Thereby, the hollow area | region covered with the insulating layer 30 and the insulating layer 40 turns into the sealed space which is not connected with the exterior. In the present embodiment, for example, the insulating layer 40 can be formed above and to the side of the hollow region. The insulating layer 40 can be made of an organic material exemplified by polyimide resin, benzocyclobutene resin, fluororesin, polyamide resin, and the like.

  Although the present invention has been described based on the embodiments, the present invention is not limited to the above-described embodiments, and modifications, improvements, and the like within the scope that can achieve the object of the present invention are included in the present invention. It is.

  Next, examples of the present invention will be described.

(Synthesis of alkali-soluble resin)
(Synthesis Example 1)
In a suitably sized reaction vessel equipped with a stirrer and condenser, maleic anhydride (122.4 g, 1.25 mol), 2-norbornene (117.6 g, 1.25 mol) and dimethyl 2,2′-azobis ( 2-methylpropionate) (11.5 g, 50.0 mmol) was weighed and dissolved in methyl ethyl ketone (150.8 g) and toluene (77.7 g). The dissolved solution was purged with nitrogen for 10 minutes to remove oxygen, and then heated at 60 ° C. for 16 hours with stirring. Thereafter, methyl ethyl ketone (320 g) was added to the solution, and this was added with sodium hydroxide (12.5 g, 0.31 mol), butanol (463.1 g, 6.25 mol), and toluene (480 g). Added to the suspension and mixed at 45 ° C. for 3 hours. The mixture was cooled to 40 ° C. and treated with formic acid (88 mass% aqueous solution, 49.0 g, 0.94 mol) to perform proton addition. Subsequently, the water washing process which adds methyl ethyl ketone (MEK) and water to this liquid mixture and isolate | separates an aqueous layer was repeated until the alkali metal density | concentration in alkali-soluble resin became 5 ppm or less. Subsequently, methanol and hexane were added and the organic layer was separated to remove unreacted monomers. Further, propylene glycol monomethyl ether acetate (PGMEA) was added, and methanol and butanol in the system were distilled off under reduced pressure until the residual amount was less than 1%. As a result, 1107.7 g of a 20 wt% alkali-soluble resin solution was obtained (molecular weight Mw = 13,700, Mn = 7,400 by gel permeation chromatography (GPC) measurement). The obtained alkali-soluble resin was a copolymer of the formula (1) and contained a structural unit represented by the formula (2a) and a structural unit represented by the formula (2c). Moreover, the alkali metal concentration contained in the obtained alkali-soluble resin was 5 ppm or less.

The alkali metal concentration in the alkali-soluble resin was determined by measuring the alkali metal concentration in the alkali-soluble resin solution obtained above using a flameless atomic absorption spectrophotometer. It was obtained by calculating the alkali metal concentration. In addition, the following apparatuses and methods were used for the measurement of alkali metal concentration.
Polarized Zeeman atomic absorption photometer Z-2710 manufactured by Hitachi High-Technologies Corporation
Analysis method: Flameless graphite furnace method

(Synthesis Example 2)
393.96 g of dicarboxylic acid derivative (active ester) obtained by reacting 0.8 mol of diphenyl ether 4,4′-dicarboxylic acid with 1.6 mol of 1-hydroxy-1,2,3-benzotriazole 8 mol) and 366.26 g (1.0 mol) of hexafluoro-2,2-bis (3-amino-4-hydroxyphenyl) propane are equipped with a thermometer, stirrer, raw material inlet, and dry nitrogen gas inlet tube. Into a four-necked separable flask, 3100 g of γ-butyrolaclone was added and dissolved. Then, it was made to react at 82 degreeC for 9 hours using the oil bath.
Next, 34.43 g (0.2 mol) of 4-ethynylphthalic anhydride dissolved in 100 g of γ-butyrolactone was added, and the mixture was further stirred for 10 hours to complete the reaction. After the reaction mixture was filtered, the reaction mixture was poured into a solution of water / isopropanol = 3/1 (volume ratio). The resulting precipitate was collected by filtration, washed thoroughly with water, and then dried under vacuum. The desired alkali-soluble resin was obtained.

(Preparation of photosensitive resin composition)
About each Example and each comparative example, after dissolving each component in propylene glycol monomethyl ether acetate (PGMEA) according to the mixing | blending shown in Table 1, it stirs, Then, it filters with a 0.2 micrometer filter, The photosensitive resin composition Was prepared. The blending ratio shown in Table 1 indicates the blending ratio (% by weight) of each component with respect to the entire nonvolatile components of the photosensitive resin composition. Details of each component shown in Table 1 are as follows.

(Alkali-soluble resin)
Alkali-soluble resin 1: Alkali-soluble resin synthesized by Synthesis Example 1 Alkali-soluble resin 2: Alkali-soluble resin synthesized by Synthesis Example 2

(Crosslinking agent)
Crosslinking agent 1: Compound represented by the following formula (5) (VG3101L, manufactured by Printec Co., Ltd.)
Cross-linking agent 2: Compound represented by the following formula (6) (ZX-1542, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd.)
Crosslinking agent 3: bisphenol A type epoxy compound (LX-01, manufactured by Daiso Corporation)

(Photosensitive agent)
Esterified product of a compound represented by the following formula (B1) and 1,2-naphthoquinonediazide-5-sulfonyl chloride (PA-28, manufactured by Daitokemix Co., Ltd.)

(Measurement of ashing speed)
About each Example and each comparative example, the ashing speed | rate of the cured film formed using the obtained photosensitive resin composition was measured as follows. First, the photosensitive resin composition was applied onto a silicon wafer by a spin method, and then heat-treated at 100 ° C. for 120 seconds to obtain a resin film having a thickness of 6 μm. Next, the obtained resin film was cured by heating at 280 ° C. for 2 hours to obtain a cured film. Next, the obtained cured film was subjected to O ₂ ashing treatment with 1000 W, O ₂ = 500 sccm, treatment time 10 minutes, treatment start temperature = 90 ° C., interelectrode distance = 10 cm, apparatus AP-1000 (March Plasma System). inc.). Then, a value obtained by dividing the processing time reduction film of cured film by O ₂ ashing treatment was calculated as the ashing rate (μm / min). The results are shown in Table 1.

(Evaluation of controllability of pattern shape)
About the cured film produced by said (measurement of ashing speed), the pattern shape was confirmed visually. The evaluation is based on the following criteria. The results are shown in Table 1.
◎: No corner shape ○: Some corners remain in the pattern △: Rectangular shape

(Heat resistance evaluation)
Using the cured film produced by the above (measurement of ashing speed), the heat resistance was evaluated. In this measurement, using an EX star series (thermogravimetric measuring device) manufactured by Seiko Instruments Inc., the cured film was gradually heated and analyzed for the temperature at which the weight decreased by 5%. In the evaluation, the evaluation is performed based on the following criteria, and indicates that degassing or weight reduction starts at the temperature described in each. The results are shown in Table 1.
A: 290 ° C. or higher ○: 270 ° C. or higher and lower than 290 ° C. Δ: 250 ° C. or higher and lower than 270 ° C. x: Less than 250 ° C.

(Scum remaining control evaluation)
About each Example and each comparative example, scum residual suppression evaluation was performed as follows. First, the photosensitive resin composition obtained above was applied onto a silicon wafer by a spin method, and then heat-treated at 100 ° C. for 120 seconds to obtain a resin film having a thickness of 6 μm. Next, the obtained resin film was exposed to a pattern having a line / space of 5 μm / 5 μm using a g + h + i line mask aligner (PLA-501F) manufactured by Canon Inc. with an integrated light amount of 300 mJ / cm ^2. 2. A 38% tetramethylammonium hydroxide aqueous solution) was developed at 23 ° C. for 90 seconds and rinsed with pure water to obtain a patterned resin film. Subsequently, the obtained pattern was observed and scum residual suppression evaluation was performed based on the following evaluation criteria. The results are shown in Table 2.
：: No scum residue observed when observed at a microscope magnification of 100 ○: Scum residue cannot be confirmed when observed at a microscope magnification of 50 times, but confirmed when observed at a microscope magnification of 100 times Δ: Line / space pattern can be resolved, but residual scum is observed when observed at a magnification of 50 × with a microscope. ×: Line / space pattern cannot be resolved due to residual scum.

100 Electronic device 1 Substrate 2, 4, 30, 40 Insulating layer 3 Wiring 10 Resin film 11 Sacrificial film 110 Side surface 111 Upper surface 112 Lower surface

Claims (8)

A photosensitive resin composition used for forming a sacrificial film,
An alkali-soluble resin containing a copolymer represented by the following formula (1):
A photosensitizer,
A crosslinking agent;
A photosensitive resin composition comprising:

(In formula (1), l and m represent the molar content in the polymer, l + m ≦ 1, n is 0, 1 or 2, and R ₁ , R ₂ , R ₃ and R ₄ are each independently Hydrogen or an organic group having 1 to 30 carbon atoms, and A is a structural unit represented by the following formula (2a), (2b), (2c) or (2d))

(In Formula (2a) and Formula (2b), R ₅ , R ₆ and R ₇ are each independently an organic group having 1 to 18 carbon atoms) In the photosensitive resin composition of Claim 1,
The crosslinking agent is
A first epoxy compound having two or more glycidyl groups;
A second epoxy compound different from the first epoxy compound and having three or more glycidyl groups;
A photosensitive resin composition comprising: In the photosensitive resin composition of Claim 2,
The first epoxy compound is a photosensitive resin composition that is a bisphenol-type epoxy compound. In the photosensitive resin composition of Claim 3,
The photosensitive resin composition, wherein the bisphenol-type epoxy compound is a bisphenol A-type epoxy compound. In the photosensitive resin composition of Claim 2,
The photosensitive resin composition in which the first epoxy compound is an aliphatic epoxy compound. In the photosensitive resin composition as described in any one of Claims 2-5,
The photosensitive resin composition whose content of the said 1st epoxy compound is 0.1 to 90 weight% with respect to the said whole crosslinking agent. In the photosensitive resin composition as described in any one of Claims 1-6,
Content of the said crosslinking agent is a photosensitive resin composition which is 15 to 45 weight% with respect to the whole non-volatile component of the said photosensitive resin composition. In the photosensitive resin composition as described in any one of Claims 1-7,
A photosensitive resin composition having an ashing speed calculated by the following measurement method of 0.08 μm / min or more.
<Measurement method>
First, the photosensitive resin composition is applied onto a silicon wafer by a spin method, and then heat-treated at 100 ° C. for 120 seconds to obtain a resin film having a thickness of 6 μm. Next, after the resin film was cured at 280 ° C. for 2 hours, O ₂ ashing treatment (1000 W, O ₂ = 500 sccm, treatment time 10 minutes, treatment start temperature = 90 ° C., distance between electrodes = 10 cm, Apparatus AP-1000 [manufactured by March Plasma System Inc.]). Next, the ashing speed is calculated based on the film thickness reduction thus obtained.

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