JP2017005236A5 - - Google Patents

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Publication number
JP2017005236A5
JP2017005236A5 JP2015178990A JP2015178990A JP2017005236A5 JP 2017005236 A5 JP2017005236 A5 JP 2017005236A5 JP 2015178990 A JP2015178990 A JP 2015178990A JP 2015178990 A JP2015178990 A JP 2015178990A JP 2017005236 A5 JP2017005236 A5 JP 2017005236A5
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JP
Japan
Prior art keywords
semiconductor layer
type semiconductor
formed over
pmc
depletion
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JP2015178990A
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English (en)
Japanese (ja)
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JP6485299B2 (ja
JP2017005236A (ja
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Publication of JP2017005236A publication Critical patent/JP2017005236A/ja
Publication of JP2017005236A5 publication Critical patent/JP2017005236A5/ja
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Publication of JP6485299B2 publication Critical patent/JP6485299B2/ja
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JP2015178990A 2015-06-05 2015-09-11 半導体装置およびその製造方法ならびに電力変換装置 Active JP6485299B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015114375 2015-06-05
JP2015114375 2015-06-05

Publications (3)

Publication Number Publication Date
JP2017005236A JP2017005236A (ja) 2017-01-05
JP2017005236A5 true JP2017005236A5 (cg-RX-API-DMAC10.html) 2017-12-28
JP6485299B2 JP6485299B2 (ja) 2019-03-20

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ID=57754413

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JP2015178990A Active JP6485299B2 (ja) 2015-06-05 2015-09-11 半導体装置およびその製造方法ならびに電力変換装置

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JP (1) JP6485299B2 (cg-RX-API-DMAC10.html)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6485383B2 (ja) * 2016-02-23 2019-03-20 株式会社デンソー 化合物半導体装置およびその製造方法
JP6927112B2 (ja) * 2018-03-27 2021-08-25 豊田合成株式会社 半導体装置の製造方法
JP6927116B2 (ja) * 2018-03-28 2021-08-25 豊田合成株式会社 半導体装置

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100225409B1 (ko) * 1997-03-27 1999-10-15 김덕중 트렌치 디-모오스 및 그의 제조 방법
JP4801306B2 (ja) * 2000-02-09 2011-10-26 ノースカロライナ ステート ユニバーシティー 窒化ガリウム半導体構造体の製造方法および窒化ガリウム半導体構造体
KR100473476B1 (ko) * 2002-07-04 2005-03-10 삼성전자주식회사 반도체 장치 및 그 제조방법
US7989882B2 (en) * 2007-12-07 2011-08-02 Cree, Inc. Transistor with A-face conductive channel and trench protecting well region
JP5721308B2 (ja) * 2008-03-26 2015-05-20 ローム株式会社 半導体装置
JP5442229B2 (ja) * 2008-09-04 2014-03-12 ローム株式会社 窒化物半導体素子の製造方法
JP5884617B2 (ja) * 2012-04-19 2016-03-15 株式会社デンソー 炭化珪素半導体装置およびその製造方法
JP6041726B2 (ja) * 2013-03-26 2016-12-14 三菱電機株式会社 電力変換装置及び空気調和装置
JP6107597B2 (ja) * 2013-03-26 2017-04-05 豊田合成株式会社 半導体装置およびその製造方法
JP6048317B2 (ja) * 2013-06-05 2016-12-21 株式会社デンソー 炭化珪素半導体装置
WO2015072052A1 (ja) * 2013-11-13 2015-05-21 三菱電機株式会社 半導体装置

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