JP2016522534A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2016522534A5 JP2016522534A5 JP2016505620A JP2016505620A JP2016522534A5 JP 2016522534 A5 JP2016522534 A5 JP 2016522534A5 JP 2016505620 A JP2016505620 A JP 2016505620A JP 2016505620 A JP2016505620 A JP 2016505620A JP 2016522534 A5 JP2016522534 A5 JP 2016522534A5
- Authority
- JP
- Japan
- Prior art keywords
- barium
- tape
- magnetic field
- dopant
- copper
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 claims description 84
- 239000002887 superconductor Substances 0.000 claims description 66
- 229910052788 barium Inorganic materials 0.000 claims description 65
- 229910052802 copper Inorganic materials 0.000 claims description 56
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 51
- 239000002019 doping agent Substances 0.000 claims description 42
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 41
- 239000002243 precursor Substances 0.000 claims description 24
- 238000000034 method Methods 0.000 claims description 23
- 150000001768 cations Chemical class 0.000 claims description 22
- 239000000758 substrate Substances 0.000 claims description 20
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 241001424392 Lucia limbaria Species 0.000 claims 3
- IGDGIZKERQBUNG-UHFFFAOYSA-N [Cu].[Ba] Chemical compound [Cu].[Ba] IGDGIZKERQBUNG-UHFFFAOYSA-N 0.000 claims 2
- 239000010408 film Substances 0.000 description 83
- 229910052726 zirconium Inorganic materials 0.000 description 38
- 239000010410 layer Substances 0.000 description 25
- 229910052688 Gadolinium Inorganic materials 0.000 description 22
- 229910052727 yttrium Inorganic materials 0.000 description 20
- 239000000203 mixture Substances 0.000 description 18
- 238000007735 ion beam assisted deposition Methods 0.000 description 14
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 13
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 13
- 230000004907 flux Effects 0.000 description 13
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 230000007547 defect Effects 0.000 description 7
- 239000000395 magnesium oxide Substances 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 238000000224 chemical solution deposition Methods 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 238000011160 research Methods 0.000 description 6
- 229910052684 Cerium Inorganic materials 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 238000004611 spectroscopical analysis Methods 0.000 description 5
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 229910002480 Cu-O Inorganic materials 0.000 description 4
- DTQVDTLACAAQTR-UHFFFAOYSA-N Trifluoroacetic acid Chemical compound OC(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-N 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 239000002086 nanomaterial Substances 0.000 description 4
- 239000002061 nanopillar Substances 0.000 description 4
- 229910000510 noble metal Inorganic materials 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 229910052692 Dysprosium Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 3
- 229910052735 hafnium Inorganic materials 0.000 description 3
- 229910000856 hastalloy Inorganic materials 0.000 description 3
- 229910052758 niobium Inorganic materials 0.000 description 3
- 239000010955 niobium Substances 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000011020 pilot scale process Methods 0.000 description 3
- 238000004549 pulsed laser deposition Methods 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 2
- 229910052693 Europium Inorganic materials 0.000 description 2
- 229910052689 Holmium Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 229910052779 Neodymium Inorganic materials 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 2
- 244000046052 Phaseolus vulgaris Species 0.000 description 2
- 238000002679 ablation Methods 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 125000002091 cationic group Chemical group 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910001026 inconel Inorganic materials 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 150000002910 rare earth metals Chemical group 0.000 description 2
- 238000004626 scanning electron microscopy Methods 0.000 description 2
- 229910001256 stainless steel alloy Inorganic materials 0.000 description 2
- 229910001233 yttria-stabilized zirconia Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- 241000954177 Bangana ariza Species 0.000 description 1
- LZZYPRNAOMGNLH-UHFFFAOYSA-M Cetrimonium bromide Chemical compound [Br-].CCCCCCCCCCCCCCCC[N+](C)(C)C LZZYPRNAOMGNLH-UHFFFAOYSA-M 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 101100130497 Drosophila melanogaster Mical gene Proteins 0.000 description 1
- 241000700560 Molluscum contagiosum virus Species 0.000 description 1
- 101100345589 Mus musculus Mical1 gene Proteins 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 1
- 229910002367 SrTiO Inorganic materials 0.000 description 1
- 235000019892 Stellar Nutrition 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910003098 YBa2Cu3O7−x Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910021523 barium zirconate Inorganic materials 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 239000002073 nanorod Substances 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- MOWMLACGTDMJRV-UHFFFAOYSA-N nickel tungsten Chemical compound [Ni].[W] MOWMLACGTDMJRV-UHFFFAOYSA-N 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000005433 particle physics related processes and functions Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000001338 self-assembly Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 235000002639 sodium chloride Nutrition 0.000 description 1
- 239000011780 sodium chloride Substances 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 125000003698 tetramethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910021521 yttrium barium copper oxide Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361807142P | 2013-04-01 | 2013-04-01 | |
| US61/807,142 | 2013-04-01 | ||
| PCT/US2014/032560 WO2014209458A1 (en) | 2013-04-01 | 2014-04-01 | Superconductor with improved flux pinning at low temperatures |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017023829A Division JP2017084829A (ja) | 2013-04-01 | 2017-02-13 | 低温における向上された磁束ピンニングを有する半導体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016522534A JP2016522534A (ja) | 2016-07-28 |
| JP2016522534A5 true JP2016522534A5 (cg-RX-API-DMAC7.html) | 2017-03-16 |
| JP6104455B2 JP6104455B2 (ja) | 2017-03-29 |
Family
ID=52142538
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016505620A Active JP6104455B2 (ja) | 2013-04-01 | 2014-04-01 | 低温における向上された磁束ピンニングを有する半導体 |
| JP2017023829A Pending JP2017084829A (ja) | 2013-04-01 | 2017-02-13 | 低温における向上された磁束ピンニングを有する半導体 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017023829A Pending JP2017084829A (ja) | 2013-04-01 | 2017-02-13 | 低温における向上された磁束ピンニングを有する半導体 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US10818416B2 (cg-RX-API-DMAC7.html) |
| JP (2) | JP6104455B2 (cg-RX-API-DMAC7.html) |
| WO (1) | WO2014209458A1 (cg-RX-API-DMAC7.html) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109690797B (zh) * | 2016-08-30 | 2024-01-09 | 休斯敦系统大学 | 高性能超导体带材的质量控制 |
| KR102776826B1 (ko) * | 2018-10-14 | 2025-03-05 | 메트옥스 인터내셔널 인코포레이티드 | 열 형 결함이 없는 초전도체 플럭스 피닝 |
| CN115605964A (zh) * | 2020-02-24 | 2023-01-13 | 休斯敦系统大学（Us） | 混合圆形超导线 |
| CN111533551B (zh) * | 2020-05-08 | 2022-07-08 | 中国科学院电工研究所 | 一种ybco超导薄膜及其制备方法 |
| US20240043280A1 (en) * | 2022-08-05 | 2024-02-08 | Imam Abdulrahman Bin Faisal University | Superconducting material and method of preparation thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5122505A (en) * | 1990-10-01 | 1992-06-16 | Sri International | Carbonate-free inorganic nitrates or oxides and process thereof |
| AU8056198A (en) * | 1997-06-11 | 1998-12-30 | University Of Cincinnati, The | Enhancement of jc in oxide superconductors |
| WO1999030333A1 (fr) | 1997-12-10 | 1999-06-17 | Hitachi, Ltd. | Fil supraconducteur en oxyde, bobine de solenoide, generateur de champ magnetique, et procede de production de fil supraconducteur en oxyde |
| US20050159298A1 (en) * | 2004-01-16 | 2005-07-21 | American Superconductor Corporation | Oxide films with nanodot flux pinning centers |
| AU2005333196B2 (en) * | 2004-10-01 | 2009-10-01 | American Superconductor Corp. | Thick superconductor films with improved performance |
-
2014
- 2014-04-01 US US14/242,587 patent/US10818416B2/en active Active
- 2014-04-01 WO PCT/US2014/032560 patent/WO2014209458A1/en not_active Ceased
- 2014-04-01 JP JP2016505620A patent/JP6104455B2/ja active Active
-
2017
- 2017-02-13 JP JP2017023829A patent/JP2017084829A/ja active Pending
-
2020
- 2020-10-19 US US17/074,223 patent/US11488746B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11488746B2 (en) | Superconductor with improved flux pinning at low temperatures | |
| Selvamanickam et al. | The low-temperature, high-magnetic-field critical current characteristics of Zr-added (Gd, Y) Ba2Cu3Ox superconducting tapes | |
| Durrell et al. | Importance of low-angle grain boundaries inYBa2Cu3O7− δ coated conductors | |
| EP2460197B1 (en) | Superconducting article with prefabricated nanostructure for improved flux pinning | |
| JP2013545213A (ja) | 鉄系超伝導構造体及びその製造方法 | |
| Takeda et al. | High Ic superconducting joint between Bi2223 tapes | |
| KR20100136464A (ko) | 고온 초전도체 물품의 형성 방법 | |
| US20110034336A1 (en) | CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)NbO6 IN REBCO FILMS | |
| Gharahcheshmeh et al. | Superconducting transition width (ΔTc) characteristics of 25 mol% Zr-added (Gd, Y) Ba2Cu3O7− δ superconductor tapes with high in-field critical current density at 30 K | |
| JP2016522534A5 (cg-RX-API-DMAC7.html) | ||
| US20110034338A1 (en) | CRITICAL CURRENT DENSITY ENHANCEMENT VIA INCORPORATION OF NANOSCALE Ba2(Y,RE)TaO6 IN REBCO FILMS | |
| Pop et al. | High critical current solution derived YBa2Cu3O7 films grown on sapphire | |
| KR20150053749A (ko) | 방향성 플럭스 피닝을 가지는 초전도체 제품 | |
| Miura et al. | Superconducting properties in SmBa 2 Cu 3 O y films with high density of BaHfO 3 Nanorods fabricated with a seed layer | |
| CN102177596A (zh) | 高温超导体 | |
| Fan et al. | Optimum composition in 10% Zr-added GdYBCO coated conductor for enhanced flux pinning at 30 K | |
| WO2011004684A1 (ja) | 基板および超電導線材の製造方法 | |
| JP2009522733A (ja) | 超伝導性の物品における耐エピタキシャル膜、および、関連する物品、デバイス、および、システム | |
| Hayashi et al. | Atom-replaced pins in a Y-based superconductor—Single-crystalline perovskite structure including both PrBa2Cu3O7− x and YBa2Cu3O7− y | |
| Ko et al. | High $ J_ {\rm c} $${\hbox {GdBa}} _ {2}{\hbox {Cu}} _ {3}{\hbox {O}} _ {7-\delta} $ Coated Conductors on ${\hbox {CeO}} _ {2} $-Buffered IBAD MgO Template Fabricated by Pulsed Laser Deposition | |
| CAI et al. | Recent Development and Emerged Technologies of High-Tc Superconducting Coated Conductors | |
| Li et al. | Effect of Hf addition on critical current density of (Y, Eu) Ba2Cu3. 6O7-δ thin films prepared by trifluoroacetate metal organic deposition | |
| Varanasi et al. | Flux Pinning Enhancement in YBa2Cu3O7-x Films for Coated Conductor Applications (Postprint) | |
| Sato et al. | Effects of the Grain-Boundary Angle of the Buffer Layer on the In-Field Critical Current Density in (Y 0.77 Gd0. 23) Ba2Cu3Oy+ BaZrO3 Nanoparticle Coated Conductors | |
| Armenio et al. | Growth and characterization of La2Zr2O7 buffer layers deposited by chemical solution deposition |