JP2016219714A - Semiconductor element, resin composition, and serge countermeasure member - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve a countermeasure which has a simple structure, a small parasitic capacitance and has a high operation speed, as a serve countermeasure for a semiconductor element.SOLUTION: A semiconductor element has a transistor region 11 and a serge countermeasure region 12. The transistor region 11 has a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, and a gate electrode 31, a source electrode 32 and a drain electrode 33 which are formed on the second semiconductor layer. The serge countermeasure region 12 has serge countermeasure sections 41 which are connected to the drain electrode 33 and the source electrode 32 respectively and are formed of an insulating material with a varistor function.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor element, a resin composition, and a surge countermeasure member.

Conventionally, nitride semiconductors such as GaN, AlN, and InN, and materials made of mixed crystals of these have been used as high-power electronic devices because of their wide band gap.
As such a high-power electronic device, there is a field effect transistor (FET), particularly, a high electron mobility transistor (HEMT) (see, for example, Patent Document 1).
HEMTs using such nitride semiconductors are used in high-efficiency switching elements and high-voltage power devices for electric vehicles.

JP 2013-197316 A

By the way, in a field effect transistor in which silicon is used as a semiconductor material, a body diode inevitably exists, and this body diode is connected to the transistor in antiparallel. For this reason, even when a high surge voltage is generated, it has sufficient surge resistance by causing avalanche collapse.
However, such a body diode does not necessarily exist in a GaN-based HEMT. Therefore, when a high surge voltage is generated, the HEMT may be destroyed and a failure may occur. For this reason, in the GaN-based HEMT, it is necessary to separately provide a surge countermeasure element such as a varistor or an RC surge absorption circuit.

Normally, such a surge countermeasure element has a large parasitic capacitance, so that the temperature is increased due to heat generated when the HEMT or the like is operated, resulting in a decrease in operation efficiency, and the operation is slowed down. When used in an element, switching loss is caused.
In addition, the operation speed in the HEMT is faster than the operation speed in the surge countermeasure element. As a result, before the current flows through the surge countermeasure element, the current flows through the HEMT, and the HEMT may be destroyed.

For this reason, as a countermeasure against a surge on a semiconductor element, a countermeasure with a small parasitic capacitance and a high operating speed is required.
As such countermeasure, Patent Document 1 proposes to provide a surge countermeasure region in the semiconductor element, but the proposed structure is complicated and it takes time to manufacture the semiconductor element.

  The present invention has been made in view of such circumstances, and an object of the present invention is to realize a countermeasure with a simple structure, a small parasitic capacitance, and a high operation speed as a countermeasure against a surge on a semiconductor element.

In order to achieve the above object, a semiconductor element of one embodiment of the present invention includes:
A semiconductor element having a transistor part and a surge countermeasure part,
The transistor portion is
A first semiconductor layer formed on the substrate;
A second semiconductor layer formed on the first semiconductor layer;
A gate electrode, a source electrode, and a drain electrode formed on the second semiconductor layer;
With
The surge countermeasure unit is a high-voltage protection member that is connected to at least two of the gate electrode, the source electrode, and the drain electrode, and exhibits non-linearity in which voltage-current characteristics do not follow Ohm's law. is there,
It is characterized by that.

  The surge countermeasure unit is a high-voltage protection member that is connected to the drain electrode and the source electrode, respectively, and exhibits non-linearity in which voltage-current characteristics do not follow Ohm's law.

  The surge countermeasure unit may be connected to the drain electrode and the source electrode on the second semiconductor layer, respectively.

  The surge countermeasure unit may be a member connected to each of the terminal of the drain electrode and the terminal of the source electrode.

The first semiconductor layer and the second semiconductor layer may be III-V compound semiconductors.
Specifically, for example, the first semiconductor layer and the second semiconductor layer can be nitride semiconductors.

One embodiment of the present invention provides:
A resin composition comprising:
Including a thermosetting resin and semiconductor ceramic particles;
The semiconductor ceramic particles have a grain boundary part and a plurality of crystal parts separated by the grain boundary part,
The cured product of the resin composition exhibits non-linearity in which voltage-current characteristics do not follow Ohm's law,
It is a resin composition used for molding into a surge countermeasure part connected to at least two of a gate electrode, a source electrode and a drain electrode of a semiconductor element.

One embodiment of the present invention provides:
A surge countermeasure member molded from a resin composition,
The resin composition is
Including a thermosetting resin and semiconductor ceramic particles;
The semiconductor ceramic particles have a grain boundary part and a plurality of crystal parts separated by the grain boundary part,
The surge countermeasure member exhibits non-linearity in which the voltage-current characteristic does not follow Ohm's law,
A surge countermeasure member connected to at least two of the gate electrode, the source electrode, and the drain electrode of the semiconductor element.

  According to the present invention, as a countermeasure against a surge on a semiconductor element, it is possible to realize a countermeasure with a simple configuration, a small parasitic capacitance, and a high operation speed.

1 is a top view of a semiconductor device according to an embodiment of the present invention. It is sectional drawing of the semiconductor element of FIG. It is a figure explaining the process of forming a nitride semiconductor layer. It is a figure explaining the process of forming a nitride semiconductor layer among the manufacturing methods of the semiconductor element of FIG. It is a figure explaining the process of forming a source electrode and a drain electrode among the manufacturing methods of the semiconductor element of FIG. It is a figure explaining the process of forming a gate electrode among the manufacturing methods of the semiconductor element of FIG. It is a figure explaining the process of forming the surge countermeasure part 41 among the manufacturing methods of the semiconductor element of FIG. 1 shows an example of the external configuration of a semiconductor element according to an embodiment of the present invention, which is different from FIG. It is an expanded sectional view of the semiconductor ceramic particle concerning this embodiment. It is a schematic diagram which shows an example of the structure which concerns on this embodiment. It is a schematic diagram which shows an example of the structure which concerns on this embodiment.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings.

FIG. 1 is a top view of a semiconductor device according to an embodiment of the present invention.
FIG. 2 is a cross-sectional view of the semiconductor device of FIG. Specifically, FIG. 2A is a cross-sectional view taken along the one-dot chain line 1A-1B in FIG. 2B is a cross-sectional view taken along the alternate long and short dash line 1C-1D in FIG.
In the semiconductor element in the present embodiment, a transistor called HEMT is formed. Specifically, as shown in FIG. 1, the semiconductor element according to the present embodiment includes a transistor region 11 that functions as a transistor, and a surge countermeasure region 12 that has the same function as the surge countermeasure element.
The semiconductor element shown in FIGS. 1 and 2 has a specification of 10 W output that can be used in, for example, a millimeter wave band (30 G to 300 GHz), and has a size of 10 mm × 15 mm. Note that the size is merely an example, and various sizes of semiconductor elements can be provided depending on specifications and the like.

In the semiconductor device according to the present embodiment, as shown in FIG. 2, a buffer layer 21, an electron transit layer 22, and an electron supply layer 24 as a nitride semiconductor are stacked on a substrate 10. In the present embodiment, an intermediate layer 23 is provided between the electron transit layer 22 and the electron supply layer 24.
In the present embodiment, the buffer layer 21 is formed of AlN or the like. The electron transit layer 22 is formed of i-GaN or the like. The electron supply layer 24 is made of n-AlGaN or the like.
As a result, 2DEG is formed in the vicinity of the interface between the electron transit layer 22 and the electron supply layer 24. 2DEG is generated based on the difference in lattice constant between the electron transit layer 22 formed of GaN and the electron supply layer 24 formed of AlGaN.

The material for forming the substrate 10 may be semi-insulating or conductive. For example, as a material for forming the substrate 10, silicon, sapphire, GaAs, SiC, GaN or the like, or an impurity semiconductor doped with impurities can be employed. For example, as a material for forming the substrate 10, a doped material such as fluorine-doped tin oxide can be employed.

In the transistor region 11, the p-type layer 25 and the gate electrode 31 are stacked in that order on a partial region of the electron supply layer 24.
A source electrode 32 and a drain electrode 33 are formed on another partial region of the electron supply layer 24 in the transistor region 11.

The source electrode 32 and the drain electrode 33 extend to the surge countermeasure region 12. That is, the source electrode 32 and the drain electrode 33 are also formed on a partial region of the electron supply layer 24 in the surge countermeasure region 12.
Further, a surge countermeasure portion 41 is formed on a partial area of the electron supply layer 24 in the surge countermeasure area 12. The surge countermeasure unit 41 is formed from a high-voltage protection member that is connected to the source electrode 32 and the drain electrode 33 and exhibits non-linearity in which the voltage-current characteristics do not follow Ohm's law. In the present specification, “a high-voltage protection member exhibiting non-linearity in which voltage-current characteristics do not follow Ohm's law” is also referred to as “insulating material with varistor function”.
The insulating material with a varistor function functions as an insulating material until a voltage equal to or lower than a predetermined voltage is applied, but functions as a conductive material when a voltage exceeding the predetermined voltage is applied. In other words, the varistor function-equipped insulating material is a high-voltage protection member that exhibits nonlinearity in which the voltage-current characteristics do not follow Ohm's law. Further details of the insulating material with a varistor function will be described later with reference to FIGS.
Here, “connected” means electrically connected when a voltage exceeding the predetermined voltage is applied.

That is, when a surge voltage exceeding the predetermined voltage occurs, a current flows between the source electrode 32 and the drain electrode 33 in the surge countermeasure region 12 before the transistor region 11. Thereby, damage of the semiconductor element in this embodiment can be prevented.
As described above, in the semiconductor element of the present embodiment, the surge countermeasure area 12 is provided as one area of the semiconductor element. Therefore, it is possible to take a surge countermeasure with a small parasitic capacitance and a high operating speed.
Furthermore, since the surge countermeasure unit 41 is made of an insulating material with a varistor function that is excellent in formability, it is not necessary to make the other source electrode 32 and drain electrode 33 in a special shape, and a surge countermeasure can be realized with a simple configuration. Can do.
That is, since it is not necessary to make the other source electrode 32 and drain electrode 33 into a special shape, the manufacture of the other source electrode 32 and drain electrode 33 is facilitated, and the work of incorporating and connecting them is also easy. Become. As a result, the entire semiconductor element can be easily manufactured, and the manufacturing cost can be reduced.
On the other hand, even if it is necessary to make other source electrode 32 and drain electrode 33 in a special shape according to various specifications and requests, these are incorporated and connected by using an insulating material with a varistor function that is excellent in formability. Work and the like are facilitated as compared with the prior art such as Patent Document 1. In other words, since an insulating material with a varistor function that is excellent in moldability can be used, various design requirements can be met, and as a result, the degree of freedom in designing the semiconductor element is increased.

(Semiconductor element manufacturing method)
Next, a method for manufacturing a semiconductor element in the present embodiment will be described with reference to FIGS. 3 to 7 as appropriate.

FIG. 3 is a diagram illustrating a process of forming a nitride semiconductor layer.
Specifically, FIG. 3A is a top view in this step. FIG. 3B is a cross-sectional view taken along the alternate long and short dash line 4A-4B in FIG. FIG.3 (c) is sectional drawing cut | disconnected by the dashed-dotted line 4C-4D in Fig.3 (a).

First, as shown in FIG. 3, a nitride semiconductor layer composed of a buffer layer 21, an electron transit layer 22, an intermediate layer 23, an electron supply layer 24, a p-type film 25 tf and the like is formed on the substrate 10 by metal organic vapor phase epitaxy. These nitride semiconductor layers are formed by epitaxial growth by MOVPE, but methods other than MOVPE, for example, molecular beam epitaxy (MBE), for example, are used. ) Method.

A silicon substrate is used as the substrate 10.
The buffer layer 21 is made of AlN having a thickness of 0.1 μm.
The electron transit layer 22 is formed of i-Gan having a thickness of 3 μm.
The intermediate layer 23 is made of i-AlGaN having a thickness of 5 nm.
The electron supply layer 24 is formed of n-AlGaN having a thickness of 30 nm.
The p-type film 25tf is formed of p-GaN having a thickness of 100 nm.
The p-type film 25tf is for forming a p-type layer 25 described later.
The structure on the electron supply layer 24 may be a structure in which a cap layer (not shown) is formed.

FIG. 4 is a diagram illustrating a process for forming the p-type layer 25.
FIG. 4A is a top view in this step. FIG. 4B is a cross-sectional view taken along the alternate long and short dash line 5A-5B in FIG. FIG.4 (c) is sectional drawing cut | disconnected by the dashed-dotted line 5C-5D in Fig.4 (a).

As shown in FIG. 4, the p-type layer 25 is formed by processing the p-type film 25tf.
Specifically, a photoresist is applied on the p-type film 25tf, and an exposure apparatus performs exposure and development, thereby forming a resist pattern (not shown) in a region where the p-type layer 25 is formed.
Thereafter, dry etching such as RIE (Reactive Ion Etching) is performed to remove the p-type film 25tf in the region where the resist pattern is not formed, the surface of the electron supply layer 24 is exposed, and p-GaN is used. A p-type layer 25 is formed.
Thereafter, the resist pattern (not shown) is removed with an organic solvent or the like.
Thereby, the p-type layer 25 is formed in the transistor region 11.

FIG. 5 is a diagram illustrating a process of forming the source electrode 32 and the drain electrode 33.
FIG. 5A is a top view in this step. FIG.5 (b) is sectional drawing cut | disconnected by the dashed-dotted line 6A-6B in Fig.5 (a). FIG.5 (c) is sectional drawing cut | disconnected by the dashed-dotted line 6C-6D in Fig.5 (a).

As shown in FIG. 5, the source electrode 32 and the drain electrode 33 are formed in the transistor region 11 and the surge countermeasure region 12 on the electron supply layer 24.
Specifically, a photoresist is applied on the electron supply layer 24 and the p-type layer 25, and an exposure apparatus performs exposure and development to form a resist pattern (not shown).
The resist pattern (not shown) has an opening in a region where the source electrode 32 and the drain electrode 33 are formed.
Thereafter, a metal film for forming the source electrode 32, the drain electrode 33, and the like is formed by vacuum vapor deposition, and immersed in an organic solvent, so that the metal film formed on the resist pattern is combined with the resist pattern. Remove by lift-off.
Thereby, the source electrode 32 and the drain electrode 33 are formed by the remaining metal film.

FIG. 6 is a diagram illustrating a process of forming the gate electrode 31.
FIG. 6A is a top view in this step. FIG. 6B is a cross-sectional view taken along one-dot chain line 7A-7B in FIG. FIG.6 (c) is sectional drawing cut | disconnected in the dashed-dotted line 7C-7D in Fig.6 (a).

As shown in FIG. 6, a gate electrode 31 is formed in the transistor region 11 on the p-type layer 25.
Specifically, a photoresist is applied on the electron supply layer 24, the source electrode 32, and the drain electrode 33, and the exposure apparatus performs exposure and development, thereby having an opening in a region where the gate electrode 31 is formed. A resist pattern (not shown) is formed.
Thereafter, a metal film for forming the gate electrode 31 is formed by vacuum vapor deposition and immersed in an organic solvent or the like, whereby the metal film formed on the resist pattern is removed together with the resist pattern by lift-off.
Thereby, the gate electrode 31 is formed by the remaining metal film.

FIG. 7 is a diagram illustrating a process of forming the surge countermeasure unit 41.
FIG. 7A is a top view in this step. FIG.7 (b) is sectional drawing cut | disconnected by the dashed-dotted line 8A-8B in Fig.7 (a). FIG.7 (c) is sectional drawing cut | disconnected in the dashed-dotted line 8C-8D in Fig.7 (a).

  As shown in FIG. 7, a surge countermeasure portion 41 made of an insulating material with a varistor function is formed between the source electrode 32 and the drain electrode 33 in the surge countermeasure region 12.

The semiconductor element in this embodiment is manufactured by the manufacturing method described above.
Furthermore, an insulating film (not shown) may be formed on the gate electrode 31, the source electrode 32, the drain electrode 33, and the like. This insulating film serves as a passivation film, and can be formed by forming an insulating material such as SiO 2 or SiN by plasma CVD (Chemical Vapor Deposition) or the like.

  The semiconductor element of this embodiment can be manufactured by the semiconductor element manufacturing method as described above.

  Here, the semiconductor element to which the present invention is applied is not limited to the above-described embodiment, but includes modifications and improvements as long as the object of the present invention can be achieved.

For example, in the above-described embodiment, the surge countermeasure portion 41 is formed in the surge countermeasure area 12 of the semiconductor element.
However, the surge countermeasure unit is not particularly limited to the above-described embodiment, and may take various embodiments such as formed from an insulating material with a varistor function, which is connected to the drain electrode and the source electrode, respectively. it can.

FIG. 8 shows an example of the external configuration of a semiconductor element according to an embodiment of the present invention, which is different from the above-described embodiment.
The semiconductor element in the embodiment of FIG. 8 includes a semiconductor part configured as a HEMT (the structure is not shown but is the same as that of FIG. 2), a terminal G of a gate electrode, a terminal D of a drain electrode, and a terminal S of a source electrode, In addition, a surge countermeasure unit 51 is provided.
The surge countermeasure 51 is a member formed of an insulating material with a varistor function, which is connected to the terminal D of the drain electrode and the terminal S of the source electrode.
The transistor region 11 includes a first semiconductor layer formed on the substrate, a second semiconductor layer formed on the first semiconductor layer, and a gate formed on the second semiconductor layer. An electrode 31, a source electrode 32, and a drain electrode 33 are provided. The surge countermeasure region 12 has a surge countermeasure portion 41 formed from an insulating material with a varistor function, which is connected to the drain electrode 33 and the source electrode 32, respectively.
The semiconductor element shown in FIG. 8 has a 10 w output specification that can be used in, for example, a millimeter wave band (30 G to 300 GHz), and has a size of 10 mm × 15 mm. Note that the size is merely an example, and various sizes of semiconductor elements can be provided depending on specifications and the like.

Thus, in the semiconductor element of the embodiment of FIG. 8, the surge countermeasure 51 is connected to the terminal of the semiconductor element. Surge countermeasures with small capacity and fast operating speed are possible.
Furthermore, since the surge countermeasure 51 is made of an insulating material with a varistor function that is excellent in formability, it can be manufactured with a simple configuration as shown in FIG.
Here, the surge countermeasure 51 shown in FIG. 8 has a configuration that can be freely attached to and detached from the terminal D of the drain electrode and the terminal S of the source electrode. It can also be manufactured together, or can be manufactured independently of the semiconductor element as a part of the semiconductor element.
In other words, since the semiconductor element is completed simply by fitting the surge countermeasure part 51 into a part other than the surge countermeasure part 51, the entire semiconductor element can be easily manufactured, and the manufacturing cost can be reduced. become.
Here, the portions other than the surge countermeasure portion 51 can have various shapes according to various specifications and requests, but since an insulating material with a varistor function having excellent formability can be used, for any shape However, the suitable surge countermeasure part 51 can be manufactured easily. As a result, the degree of freedom in designing the semiconductor element is increased.

  In addition, this invention is not limited to the above-mentioned embodiment, The deformation | transformation in the range which can achieve the objective of this invention, improvement, etc. are included in this invention.

For example, in the above-described embodiment, the surge countermeasure portion molded from the varistor function insulating material is connected to the drain electrode and the source electrode, respectively.
However, the connection location of the surge countermeasure unit is not particularly limited to this. That is, depending on the type and characteristics of countermeasure surges, the surge countermeasure unit may be connected to the gate electrode and the drain electrode, respectively, to the gate electrode and the source electrode, or to the gate electrode. The electrode, the drain electrode, and the source electrode may be connected to each other.

For example, in the above-described embodiment, the first semiconductor layer is the electron transit layer 22, the second semiconductor layer is the electron supply layer 24, and the third semiconductor layer is the p-type layer 25.
However, the first semiconductor layer, the second semiconductor layer, and the third semiconductor layer are not particularly limited to these, and any layer that can exhibit the transistor function as a whole can be employed.

However, the first semiconductor layer and the second semiconductor layer are preferably III-V compound semiconductors, specifically, nitride semiconductors as in the above-described embodiment. The reason is as follows.
That is, since a body diode is not necessarily present in a nitride semiconductor, the effect of using a surge countermeasure portion formed from an insulating material with a varistor function becomes more remarkable.
That is, as described above in the section of the problem to be solved by the invention, in the conventional semiconductor element (for example, GaN-based HEMT) in which the first semiconductor layer and the second semiconductor layer are nitride semiconductors, the varistor function is used. Since there is no surge countermeasure part molded from the attached insulating material, it is necessary to separately provide a surge countermeasure element such as a varistor or an RC surge absorption circuit. Since such a surge countermeasure element has a large parasitic capacitance, the temperature rises due to heat generated when the semiconductor element is operated, resulting in a decrease in operation efficiency, and the operation becomes slow. If used, it causes switching loss.
In addition, the operating speed of the semiconductor element is faster than the operating speed of the surge countermeasure element. As a result, the current flows through the semiconductor element before the current flows through the surge countermeasure element, and the semiconductor may be destroyed.
In contrast, by using a surge countermeasure part molded from an insulating material with a varistor function as an element of a semiconductor element, the parasitic capacitance is reduced and switching loss is reduced compared to the case where an external surge countermeasure element is provided. In addition, since the operation speed is increased, the possibility of destruction of the semiconductor is reduced.

  Further, for example, the length of the surge countermeasure unit 41 (the length of the path through which current flows when a surge voltage is generated) is not particularly limited to the above-described embodiment, and may be arbitrary. For example, priority is given to surge countermeasures having a high operating speed. If so, shorten it. In this case, the source electrode 32 and the drain electrode 33 are preferably configured to be connected to the surge countermeasure unit 41 in the surge countermeasure region 12.

Moreover, the following thermal resin composition is enough for the surge countermeasure part molded from the varistor function insulating material.
That is, the resin composition according to the present invention includes a thermosetting resin, and semiconductor ceramic particles having a grain boundary part and a plurality of crystal parts separated by the grain boundary part, and the cured product has voltage-current characteristics. Is a resin composition exhibiting non-linearity that does not follow Ohm's law, and at least two of the gate electrode, the source electrode, and the drain electrode of the semiconductor element (the drain electrode and the source electrode in the above embodiment), It is used to form a surge countermeasure part connected to each. The resin composition corresponds to the insulating material with a varistor function shown as an example above.

  By using a resin composition adopting such a configuration, it becomes possible to provide a surge countermeasure portion in the semiconductor element with a high yield, so that the semiconductor element and the surge countermeasure element are arranged in the circuit as in the past. As a result, as a countermeasure against a surge on a semiconductor element, it is possible to realize a countermeasure with a simple structure, a small parasitic capacitance, and a high operation speed.

  Here, the non-linearity (varistor characteristic) in which the voltage-current characteristic does not follow Ohm's law, which the structure obtained by the manufacturing method according to the present embodiment has, is an electronic component having at least two electrode terminals. On the other hand, when a voltage that gradually increases is applied, the current that flows through an overvoltage protection element generally called a varistor element increases nonlinearly. In the present embodiment, the structure having the varistor characteristics is specifically a structure that is mounted on an electronic component having a first terminal and a second terminal, and the structure is attached to the electronic component. When mounted, if the voltage between the first terminal and the second terminal is less than the withstand voltage of the device, it exhibits insulation and the voltage between the first terminal and the second terminal When the voltage is higher than the driving voltage of the device, it indicates the one showing conductivity. Here, the electronic component corresponds to a semiconductor element, and the first terminal and the second terminal correspond to two arbitrarily selected from a gate electrode, a source electrode, and a drain electrode. In addition, the voltage which the characteristic which the structure which concerns on this embodiment has is converted from insulation to electroconductivity as mentioned above, or the voltage converted from electroconductivity to insulation is hereafter called a varistor voltage. .

  Hereinafter, the resin composition according to the present embodiment will be described in detail.

Conventionally, as described in the section of the problem to be solved by the present invention, it has been usual to employ a configuration in which a semiconductor element and a surge countermeasure element are arranged in a circuit as a surge countermeasure.
Therefore, conventionally, it has been necessary to secure a space for arranging the surge countermeasure element. Therefore, in recent years, there has been a limit in realizing a simple configuration, a small parasitic capacitance, and a high operating speed, which are required as a countermeasure against surges. In view of such circumstances, the present inventor has considered that a simple configuration, a small parasitic capacitance, and a high operating speed can be realized if a surge countermeasure can be provided in the semiconductor element. Specifically, the inventor can arrange a semiconductor element including a gate electrode, a source electrode, and a drain electrode so as to be in contact with at least two of the gate electrode, the source electrode, and the drain electrode. For example, it has been found that it is effective as a design guideline to realize a member having a film shape and exhibiting varistor characteristics.

  However, in order to produce a member (structure) exhibiting the above-described varistor characteristics, it was necessary to produce a resin composition having the following three characteristics. The first characteristic required for the resin composition is such that the shape of the member can be controlled so as to be compatible with the shape of the electrode terminal mounted in the semiconductor element that is the target of use of the member exhibiting varistor characteristics. Excellent moldability. The second characteristic required for the resin composition is the function of the sealing material used to protect the electrode terminal in the conventional electronic component, that is, heat resistance, temperature cycle resistance, insulation reliability. The required characteristics such as durability, adhesion, and dimensional stability are maintained. The 3rd characteristic requested | required of the said resin composition is that the said resin composition can express sufficient varistor characteristic.

  In view of such circumstances, the present inventor has intensively studied a design guideline for producing a resin material that satisfies the above-described three required characteristics. As a result, the semiconductor ceramic particles 100 having varistor characteristics (see FIG. 9), When compounded in the resin composition, a member capable of providing a structure having a function of protecting the semiconductor element from an external load of a stress applied from a surge voltage or an external environment in the semiconductor element is manufactured with a high yield. The knowledge that it was possible was obtained. In addition, from the viewpoint of satisfying the first characteristic described above, that is, from the viewpoint of realizing sufficient formability, the present inventor has employed a compression molding method or a transfer molding as a method for producing a member exhibiting the above varistor characteristics. We also found it desirable to adopt the law. Therefore, the present resin composition is desirably processed into a granular, tablet or sheet form.

<Thermosetting resin>
Specific examples of the thermosetting resin contained in the resin composition according to the present invention include novolak type phenol resins such as phenol novolak resin, cresol novolak resin, bisphenol A novolak resin, and triazine skeleton-containing phenol novolak resin; Phenolic resins such as phenolic resins, tung oil, linseed oil, walnut oil, and other resol type phenolic resins such as oil-modified resol phenolic resins; bisphenol A type epoxy resins, bisphenol F type epoxy resins, bisphenol S type epoxy resins, bisphenol E Type epoxy resin, bisphenol M type epoxy resin, bisphenol P type epoxy resin, bisphenol Z type epoxy resin and other bisphenol type epoxy resins; phenol novolac type epoxy resin, Novolec type epoxy resins such as resole novolac type epoxy resins; biphenyl type epoxy resins, biphenyl aralkyl type epoxy resins, arylalkylene type epoxy resins, naphthalene type epoxy resins, anthracene type epoxy resins, phenoxy type epoxy resins, dicyclopentadiene type epoxy resins , Epoxy resin such as norbornene type epoxy resin, adamantane type epoxy resin, fluorene type epoxy resin; resin having triazine ring such as urea (urea) resin, melamine resin; unsaturated polyester resin; maleimide resin such as bismaleimide compound; polyurethane Resin; diallyl phthalate resin; silicone resin; benzoxazine resin; cyanate ester resin; polyimide resin; polyamideimide resin; Resin, a novolac type cyanate resin, bisphenol A type cyanate resin, bisphenol E type cyanate resin, bisphenol type cyanate resin such as tetramethyl bisphenol F type cyanate resins. One of these may be used alone, two or more having different weight average molecular weights may be used in combination, and one or two or more thereof and a prepolymer thereof may be used in combination.

  The content of the thermosetting resin is preferably 1% by mass or more and 38% by mass or less, and more preferably 1.5% by mass or more and 35% by mass or less with respect to the total amount of the resin composition according to the present invention. Yes, more preferably 2% by mass or more and 30% by mass or less, and most preferably 3% by mass or more and 25% by mass or less. By making content of a thermosetting resin more than the said numerical range, the fluidity | liquidity of a resin composition can be improved. In addition, by making the content of the thermosetting resin not more than the above numerical range, the heat dissipating property of the resin composition can be improved, and the varistor characteristics provided in the structure composed of the resin composition according to the present invention can be improved. It is possible to improve.

  As the thermosetting resin contained in the resin composition according to the present invention, an epoxy resin is preferably used. As said epoxy resin, it is possible to use the monomer, oligomer, and polymer in general which have 2 or more of epoxy groups in 1 molecule irrespective of the molecular weight and molecular structure. Specific examples of such epoxy resins include biphenyl type epoxy resins, bisphenol A type epoxy resins, bisphenol F type epoxy resins, stilbene type epoxy resins, hydroquinone type epoxy resins and the like; cresol novolac type epoxy resins, Novolak type epoxy resins such as phenol novolac type epoxy resin and naphthol novolak type epoxy resin; Phenol aralkyl type epoxy such as phenylene skeleton-containing phenol aralkyl type epoxy resin, biphenylene skeleton containing phenol aralkyl type epoxy resin, phenylene skeleton containing naphthol aralkyl type epoxy resin Resin; Trifunctional epoxy resin such as triphenolmethane type epoxy resin and alkyl-modified triphenolmethane type epoxy resin; Examples include modified phenolic epoxy resins such as diene-modified phenolic epoxy resins and terpene-modified phenolic epoxy resins; and heterocyclic-containing epoxy resins such as triazine nucleus-containing epoxy resins. These can be used alone or in two types. A combination of the above may also be used.

  The present resin composition may contain a release agent. By doing so, a member (structure 300) exhibiting varistor characteristics can be manufactured with higher yield. The reason for this is as follows. As described above, the present resin composition is preferably assumed to be used as a raw material for producing a member (structure 300) exhibiting varistor characteristics by a compression molding method or a transfer molding method. When the compression molding method or the transfer molding method is employed, the member (structure 300) is manufactured using a resin mold. In this case, after molding the member (structure 300) using the resin composition, it is necessary to release the molded product from the mold. And when the mold release force at the time of releasing a molding from a molding die becomes strong, there exists a tendency for the inconvenience that the obtained molding is damaged easily arises. Therefore, when a resin composition containing a release agent is used, it is possible to suppress the above-described inconvenience, and as a result, a member (structure 300) exhibiting varistor characteristics is manufactured with high yield. It becomes possible.

  Specific examples of the release agent according to this embodiment include natural wax, synthetic wax, higher fatty acid or metal salt thereof, paraffin, polyethylene oxide and the like. The content of the release agent is preferably 0.01% by mass or more and 1% by mass or less, and more preferably 0.03% by mass or more and 0.8% by mass or less, based on the total amount of the resin composition. .

The resin material 200 according to the present invention (see FIGS. 10 and 11) may contain a curing agent. The curing agent only needs to be cured by reacting with a thermosetting resin. Specific examples of curing agents that can be used when an epoxy resin is used as the thermosetting resin include ethylenediamine and trimethylene. C2-C20 linear aliphatic diamine such as diamine, tetramethylenediamine, hexamethylenediamine, metaphenylenediamine, paraphenylenediamine, paraxylenediamine, 4,4'-diaminodiphenylmethane, 4,4'-diaminodiphenyl Propane, 4,4'-diaminodiphenyl ether, 4,4'-diaminodiphenyl sulfone, 4,4'-diaminodicyclohexane, bis (4-aminophenyl)
Aminos such as phenylmethane, 1,5-diaminonaphthalene, metaxylenediamine, paraxylenediamine, 1,1-bis (4-aminophenyl) cyclohexane, dicyanodiamide; resol type such as aniline-modified resole resin and dimethyl ether resole resin Phenol resins: Novolak type phenol resins such as phenol novolak resin, cresol novolak resin, tert-butylphenol novolak resin, nonylphenol novolak resin; Phenol aralkyl resins such as phenylene skeleton-containing phenol aralkyl resin and biphenylene skeleton-containing phenol aralkyl resin; Phenolic resin having a condensed polycyclic structure such as a skeleton; polyoxystyrene such as polyparaoxystyrene; hexahydro anhydride Arocyclic acid anhydrides such as phosphoric acid (HHPA) and methyltetrahydrophthalic anhydride (MTHPA), aromatics such as trimellitic anhydride (TMA), pyromellitic anhydride (PMDA), and benzophenone tetracarboxylic acid (BTDA) Acid anhydrides including acid anhydrides, etc .; Polymercaptan compounds such as polysulfides, thioesters, and thioethers; Isocyanate compounds such as isocyanate prepolymers and blocked isocyanates; Organic acids such as carboxylic acid-containing polyester resins, and the like. These may be used alone or in combination of two or more. Among them, from the viewpoint of improving the moisture resistance and reliability of the structure 300, a compound having at least two phenolic hydroxyl groups in one molecule is preferable, and specific examples thereof include phenol novolac resin, cresol novolac resin, tert-butylphenol. Novolak type phenol resins such as novolak resins and nonylphenol novolak resins; resol type phenol resins; polyoxystyrenes such as polyparaoxystyrene; phenylene skeleton-containing phenol aralkyl resins, biphenylene skeleton-containing phenol aralkyl resins, phenylene skeleton-containing naphthol aralkyl type phenol resins Is mentioned.

  The resin material 200 included in the resin composition may contain a curing accelerator. The curing accelerator is not particularly limited as long as it accelerates the curing reaction between a functional group such as an epoxy group and the curing agent. Specific examples thereof include 1,8-diazabicyclo (5,4,0) undecene- Diazabicycloalkenes and derivatives thereof such as 7; amine compounds such as tributylamine and benzyldimethylamine; imidazole compounds such as 2-methylimidazole; organic phosphines such as triphenylphosphine and methyldiphenylphosphine; tetraphenylphosphonium tetra Phenylborate, tetraphenylphosphonium / tetrabenzoic acid borate, tetraphenylphosphonium / tetranaphthoic acid borate, tetraphenylphosphonium / tetranaphthoyloxyborate, tetraphenylphosphonium / tetranaphthyloxyborate Triphenylphosphine and the like that adduct benzoquinone; tetra-substituted phosphonium tetra-substituted borate over bets like. These may be used alone or in combination of two or more.

  In addition to the above-described components, the resin material 200 contained in the resin composition includes a coupling agent such as γ-glycidoxypropyltrimethoxysilane; a colorant such as carbon black; Mold release agents such as waxes, synthetic waxes, higher fatty acids or metal salts thereof, paraffin and polyethylene oxide; low stress agents such as silicone oil and silicone rubber; ion scavengers such as hydrotalcite; flame retardants such as aluminum hydroxide; You may mix | blend various additives, such as antioxidant.

<Semiconductor ceramic particles>
FIG. 9 is an enlarged cross-sectional view of semiconductor ceramic particles according to the present embodiment.
As shown in FIG. 9, the semiconductor ceramic particle 100 according to the present embodiment is a particle having a grain boundary part 120 and a plurality of crystal parts 110 separated by the grain boundary part 120. In other words, in the semiconductor ceramic particle 100 according to the present embodiment, a plurality of crystals composed of the grain boundary part 120 and two or more crystal parts 110 arranged so as to be separated from each other via the grain boundary part 120 are aggregated. It can be said that it is a particle. When a voltage lower than the varistor voltage is applied to the particle, the semiconductor ceramic particle 100 does not pass a current because the grain boundary 120 acts as a resistance, but a voltage higher than the varistor voltage is applied. In some cases, the particles have a characteristic that a tunnel effect occurs and current flows as shown by an arrow in FIG. In addition, about the member provided with the varistor characteristic like the semiconductor ceramic particle 100 according to the present embodiment, it is included in a withstand voltage protection element (varistor element or the like) to be mounted on the same circuit together with the electronic element in the conventional electronic component. It was. However, a method for producing a member made of the resin composition containing the semiconductor ceramic particles 100 satisfying the following two required characteristics with high yield has not been reported so far. The first required characteristic described above is that it can be provided inside the electronic element itself mounted in the circuit mounted in the electronic component. The second required characteristic described above has a function of protecting the electronic element from stress applied from the external environment in addition to overvoltage such as static electricity when the member is provided inside the electronic element itself. That is.

  The average particle diameter D50 of the semiconductor ceramic particle 100 is, for example, 0.01 μm or more and 150 μm or less, preferably 0.1 μm or more and 120 μm or less, more preferably 1 μm or more and 90 μm or less, and particularly preferably. It is 5 μm or more and 60 μm or less. By doing so, it becomes possible to develop varistor characteristics without depending on the shape of the structure 300 formed of the resin composition including the semiconductor ceramic particles 100.

  The semiconductor ceramic particles 100 are preferably spherical particles. Thereby, it is possible to easily control the varistor characteristics.

  In the semiconductor ceramic particle 100, the crystal part 110 is preferably formed of a material including at least one selected from the group consisting of zinc oxide, silicon carbide, strontium titanate, and barium titanate. Especially, the material which contains zinc oxide as a main component is preferable from a viewpoint of improving the nonlinear coefficient and energy tolerance of the semiconductor ceramic particle 100 itself. Since a material containing silicon carbide as a main component has a high dielectric breakdown voltage, it is suitable when the varistor voltage is set to a high voltage. A material containing strontium titanate as a main component is preferable in terms of absorption and suppression of high voltage / high frequency noise.

  In the semiconductor ceramic particle 100, the grain boundary part 120 is preferably formed of a material containing at least one selected from the group consisting of bismuth, praseodymium, antimony, manganese, cobalt and nickel, or a compound thereof. Among these, the grain boundary portion 120 is preferably formed of a material containing at least one selected from the group consisting of bismuth, praseodymium, and these compounds from the viewpoint of good non-linear resistance characteristics. . Examples of these compounds include oxides, nitrides, organic compounds, and other inorganic compounds, but oxides are preferable from the viewpoint of satisfactorily expressing varistor characteristics.

The content of the semiconductor ceramic particles 100 is preferably 60% by mass or more and 97% by mass or less, and more preferably 70% by mass with respect to the total amount of the resin composition, from the viewpoint of surely expressing the varistor characteristics of the structure 300. It is not less than 95% by mass and particularly preferably not less than 75% by mass and not more than 95% by mass. By controlling the content of the semiconductor ceramic particles 100 to be within the above numerical range, the semiconductor ceramic particles are arranged such that a plurality of particles are in contact with each other between the two electrode terminals 130 as shown in the schematic diagram of FIG. A structure 300 filled with 100 can be realized. That is, when the content of the semiconductor ceramic particles 100 is controlled to be within the above numerical range, the varistor characteristics of the structure can be surely expressed.

  The resin composition preferably contains conductive particles. Thus, when a high voltage exceeding the varistor voltage is applied to a semiconductor element including the structure 300 formed of the present resin composition, the electrical conductivity of the structure 300 is further improved. Can be. Specifically, as shown in FIG. 11, the conductive particles 150 can enter the gap region between the plurality of semiconductor ceramic particles 100 arranged so as to fill the space between the two electrode terminals 130. Thereby, the varistor characteristic of the structure 300 can be further improved.

  The content of the conductive particles 150 is preferably 1% by mass or more and 20% by mass or less, more preferably 2% by mass with respect to the total amount of the resin composition, from the viewpoint of surely expressing the varistor characteristics of the structure 300. The content is from 15% to 15% by mass, and most preferably from 2% to 10% by mass. By controlling the content of the conductive particles 150 to be within the above numerical range, a plurality of semiconductor ceramic particles 100 arranged so as to fill the space between the two electrode terminals 130 as shown in the schematic diagram of FIG. It becomes possible to allow the conductive particles 150 to enter the gap region evenly.

  The average particle diameter D50 of the conductive particles 150 is, for example, 0.01 μm or more and 50 μm or less, preferably 0.02 μm or more and 40 μm or less, more preferably, from the viewpoint of surely expressing the varistor characteristics of the structure. Is 0.05 μm or more and 30 μm or less, and particularly preferably 0.1 μm or more and 20 μm or less.

  Specific examples of the material forming the conductive particles 150 are selected from the group consisting of nickel, carbon black, aluminum, silver, gold, copper, graphite, zinc, iron, stainless steel, tin, brass, and alloys thereof. And a semiconductive material selected from the group consisting of zinc oxide, silicon carbide, strontium titanate, and barium titanate.

  Moreover, it is preferable that the magnitude | size of the semiconductor ceramic particle 100 contained in this resin composition and the electrically-conductive particle 150 satisfy | fills the following conditions. Specifically, when the average particle diameter D50 of the semiconductor ceramic particles 100 is X and the average particle diameter D50 of the conductive particles 150 is Y, the value of Y / X is preferably 0.05 or more and less than 1. More preferably, it is 0.1 or more and 0.8 or less. By doing so, as in the schematic diagram shown in FIG. 11, the conductive particles 150 can easily enter the gap regions of the plurality of semiconductor ceramic particles 100 arranged so as to fill the gap between the two electrode terminals 130.

  The resin composition according to the present embodiment employs a configuration including semiconductor ceramic particles exhibiting a specific amount of varistor characteristics together with a thermosetting resin. By using the resin composition adopting such a configuration, it is possible to provide a semiconductor device with a configuration having a function of protecting the semiconductor device from an external load of a stress applied from a surge voltage or an external environment. Therefore, unlike conventional electronic components, there is no need to arrange a semiconductor element and a surge countermeasure element in the circuit. As a result, as a countermeasure against a surge on the semiconductor element, the parasitic capacitance is small and the operation is simple. A fast countermeasure can be realized.

Hereinafter, using the resin composition according to the present embodiment, a surge countermeasure part (hereinafter, “
It is also referred to as “member exhibiting varistor characteristics” and / or “structure 300”. ) Will be described.

  When the resin composition according to this embodiment is used, a member (structure 300) exhibiting varistor characteristics can be produced in a semiconductor element with a high yield by any one of the resin molding methods of the compression molding method and the transfer molding method. . Therefore, the structure 300 corresponding to the shape of the electrode terminal can be manufactured. Here, in the case of adopting a method of compressing and molding the resin composition in order to produce the structure 300, the resin composition may be processed into granules, powders, or sheets. preferable. On the other hand, in the case of adopting a transfer molding method of the resin composition for producing the structure 300, the resin composition is preferably processed into a tablet shape.

  As an example of a method for manufacturing a member (structure 300) exhibiting varistor characteristics in a semiconductor element, for example, at least two of the gate electrode, the source electrode, and the drain electrode of the semiconductor element are used for the semiconductor element. Examples include a method including a step of forming the structure 300 (high voltage protection member) by compression molding or transfer molding of the resin composition so as to contact each other.

  Hereinafter, as an example of a method for mounting the structure 300 according to this embodiment in a semiconductor element, first, the case where the structure 300 is manufactured by compression molding using a granular resin composition will be described as an example. explain. However, the method of mounting the structure 300 according to the present embodiment in the semiconductor element is not limited to the following example.

  First, a resin material supply container containing a granular resin composition is installed between an upper mold and a lower mold of a compression mold. Next, the semiconductor element is fixed to one of the upper mold and the lower mold of the compression mold by a fixing means such as clamping and suction. Hereinafter, an example in which the semiconductor element is fixed to the upper mold of the compression mold so that the surface having at least two of the gate electrode, the source electrode, and the drain electrode of the semiconductor element faces the resin material supply container will be described. Will be described.

  Next, under reduced pressure, while the interval between the upper and lower molds of the mold is reduced, the weighed granular resin composition is removed from the lower mold by a resin material supply mechanism such as a shutter that constitutes the bottom surface of the resin material supply container. Into the lower mold cavity. As a result, the granular resin composition is heated to a predetermined temperature in the lower mold cavity to be in a molten state. Next, by bonding the upper mold and the lower mold of the mold, at least two of the gate electrode, the source electrode, and the drain electrode provided in the semiconductor element in which the molten resin composition is fixed to the upper mold Press. By doing so, the gap formed between at least two of the gate electrode, the source electrode, and the drain electrode can be filled with the molten resin composition. Thereafter, the resin composition is cured over a predetermined time while maintaining the state in which the upper mold and the lower mold are bonded. Thereby, a resin composition can express a varistor characteristic reliably. Here, when performing compression molding, it is preferable to perform resin sealing while reducing the pressure inside the mold, and it is more preferable to perform the sealing under vacuum conditions. Accordingly, at least a region surrounding at least two of the gate electrode, the source electrode, and the drain electrode can be satisfactorily filled without leaving an unfilled portion of the resin composition.

  In addition, the molding temperature in the case of compression molding using a granular resin composition is not particularly limited, but is preferably 50 to 250 ° C, more preferably 50 to 200 ° C, and particularly preferably 80 to 180 ° C. preferable. The molding pressure is not particularly limited, but is preferably 0.5 to 12 MPa, and particularly preferably 1 to 10 MPa. By setting the molding temperature and pressure within the above ranges, it is possible to prevent both occurrence of a portion not filled with the molten resin composition and displacement of the semiconductor element.

  Next, an example of a method for mounting the structure 300 according to this embodiment in a semiconductor element will be described by taking as an example the case where the structure 300 is manufactured by compression molding using a sheet-like resin composition. To do.

  First, a semiconductor element is fixed to one of an upper mold and a lower mold of a compression molding mold by a fixing means such as clamping and suction. Hereinafter, an example in which the semiconductor element is fixed to the upper mold of the compression mold so that the surface having at least two of the gate electrode, the source electrode, and the drain electrode of the semiconductor element faces the resin material supply container will be described. Will be described.

  Next, a resin composition in the form of a sheet in the lower mold cavity of the mold so that the position corresponds to at least two of the gate electrode, the source electrode, and the drain electrode of the semiconductor element fixed to the upper mold of the mold Arrange things. Next, by reducing the distance between the upper mold and the lower mold of the mold under reduced pressure, the sheet-shaped resin composition is heated to a predetermined temperature in the lower mold cavity to be in a molten state. Thereafter, by bonding the upper mold and the lower mold of the mold, at least two of the gate electrode, the source electrode, and the drain electrode provided in the semiconductor element in which the molten resin composition is fixed to the upper mold Press. By doing so, the gap formed between at least two of the gate electrode, the source electrode, and the drain electrode can be filled with the molten resin composition. Thereafter, the resin composition is cured over a predetermined time while maintaining the state in which the upper mold and the lower mold are bonded. Thereby, a resin composition can express a varistor characteristic reliably. Here, when performing compression molding, it is preferable to perform resin sealing while reducing the pressure inside the mold, and it is more preferable to perform the sealing under vacuum conditions. Accordingly, at least a region surrounding at least two of the gate electrode, the source electrode, and the drain electrode can be satisfactorily filled without leaving an unfilled portion of the resin composition.

  The molding temperature in the case of compression molding using a sheet-shaped resin composition is not particularly limited, but is preferably 50 to 250 ° C, more preferably 50 to 200 ° C, and particularly preferably 80 to 180 ° C. preferable. The molding pressure is not particularly limited, but is preferably 0.5 to 12 MPa, and particularly preferably 1 to 10 MPa. By setting the molding temperature and pressure within the above ranges, it is possible to prevent both occurrence of a portion not filled with the molten resin composition and displacement of the semiconductor element.

  Next, an example of a method for mounting the structure 300 according to this embodiment in a semiconductor element will be described by taking as an example the case where the structure 300 is manufactured by transfer molding using a tablet-like resin composition. To do.

  First, a molding die provided with a semiconductor element is prepared. The molding die prepared here was melted with a pot charged with a tablet-shaped resin composition, and then a plunger with an auxiliary ram inserted into the pot to melt the resin composition by applying pressure. A sprue for feeding the resin composition into the molding space is provided.

  Next, the tablet-shaped resin composition is charged into the pot with the molding die closed. Here, the form of the resin composition charged in the pot may be in a semi-molten state by preheating with a preheater or the like in advance. Next, in order to melt the resin composition charged in the pot, a plunger having an auxiliary ram is inserted into the pot to apply pressure to the resin composition. Thereafter, the molten resin composition is introduced into the molding space through a sprue. Next, the resin composition filled in the molding space is cured by being heated and pressurized. After the resin composition is cured, a semiconductor element including the structure 300 in which the resin composition surely exhibits varistor characteristics can be obtained by opening the molding die.

  The molding temperature in transfer molding is not particularly limited, but is preferably 50 to 250 ° C, more preferably 50 to 200 ° C, and particularly preferably 80 to 180 ° C. By setting the molding temperature within the above range, it is possible to prevent both occurrence of a portion not filled with the molten resin composition and displacement of the semiconductor element.

  The surge countermeasure member according to the present invention is molded from a resin composition containing semiconductor ceramic particles having a thermosetting resin and a grain boundary part, and a plurality of crystal parts separated by the grain boundary part, and has a voltage-current characteristic. Indicates non-linearity that does not follow Ohm's law and is connected to at least two of the gate electrode, the source electrode, and the drain electrode of the semiconductor element (in the above embodiment, the drain electrode and the source electrode). As the resin composition, the resin composition according to the present invention can be used.

  The surge countermeasure member according to the present invention can be manufactured using the resin composition according to the present embodiment in the same manner as described above for producing a surge countermeasure portion in a semiconductor element.

DESCRIPTION OF SYMBOLS 10 ... Board | substrate 11 ... Transistor area | region 12 ... Surge countermeasure area | region 21 ... Buffer layer 22 ... Electron travel layer 24 ... Electron supply layer 31 ... Gate electrode 32 ... Source electrode 33 ... Drain electrode 41 ... Surge countermeasure part 51 ... Surge countermeasure part 100 ... Semiconductor ceramic particle 110 ... Crystal part 120 ... Grain boundary part 130 ... Electrode terminal 150 ... Conductive particles 200 ... resin material 300 ... member showing varistor characteristics (structure)

Claims (8)

A semiconductor element having a transistor part and a surge countermeasure part,
The transistor portion is
A first semiconductor layer formed on the substrate;
A second semiconductor layer formed on the first semiconductor layer;
A gate electrode, a source electrode, and a drain electrode formed on the second semiconductor layer;
With
The surge countermeasure unit is a high-voltage protection member that is connected to at least two of the gate electrode, the source electrode, and the drain electrode, and exhibits non-linearity in which voltage-current characteristics do not follow Ohm's law. is there,
Semiconductor element. The surge countermeasure unit is a high-voltage protection member that is connected to the drain electrode and the source electrode, respectively, and exhibits non-linearity in which voltage-current characteristics do not follow Ohm's law.
Semiconductor element. The surge countermeasure portion is a member connected to the drain electrode and the source electrode, respectively, on the second semiconductor layer.
The semiconductor device according to claim 2. The surge countermeasure portion is a member connected to the terminal of the drain electrode and the terminal of the source electrode, respectively.
The semiconductor device according to claim 2. The first semiconductor layer and the second semiconductor layer are III-V compound semiconductors,
The semiconductor element as described in any one of Claims 1 thru | or 4. The semiconductor device according to claim 1, wherein the first semiconductor layer and the second semiconductor layer are nitride semiconductors. A resin composition comprising:
Including a thermosetting resin and semiconductor ceramic particles;
The semiconductor ceramic particles have a grain boundary part and a plurality of crystal parts separated by the grain boundary part,
The cured product of the resin composition exhibits non-linearity in which voltage-current characteristics do not follow Ohm's law,
A resin composition used for forming a surge countermeasure portion connected to at least two of a gate electrode, a source electrode, and a drain electrode of a semiconductor element. A surge countermeasure member molded from a resin composition,
The resin composition is
Including a thermosetting resin and semiconductor ceramic particles;
The semiconductor ceramic particles have a grain boundary part and a plurality of crystal parts separated by the grain boundary part,
The surge countermeasure member exhibits non-linearity in which the voltage-current characteristic does not follow Ohm's law,
A surge countermeasure member connected to at least two of a gate electrode, a source electrode and a drain electrode of a semiconductor element.

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