JP2016206399A - Exposure equipment - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide exposure equipment capable of suppressing a man hour, time, and a mask number required for exposure of a three-dimensional work.SOLUTION: There is provided projection exposure equipment capable of exposing a surface of a three-dimensional work 71 having a surface with any angle with respect to a main beam 120 of illumination light. The projection exposure equipment comprises: exposure mask patterns 16, 18 arranged at a first inclination angle less than a right angle with respect to the main beam 120; and a mirror having reflection surfaces 46b, 47b for reflecting illumination lights 310, 330 which passed the exposure mask patterns 16, 18 toward imaging surfaces 36, 38 on the three-dimensional work 71 at a predetermined inclination angle with respect to the main beam 120.SELECTED DRAWING: Figure 9

Description

  The present invention relates to an exposure apparatus for forming a pattern such as a circuit on the surface of a three-dimensional workpiece (exposure target) using a photolithography technique, and more particularly to an exposure apparatus capable of exposing a side surface of a three-dimensional workpiece.

  Conventionally, in a photolithography technique, a pattern drawn on an exposure mask is projected perpendicularly on the upper surface and / or lower surface of a three-dimensional workpiece by parallel light, and a resist applied on the three-dimensional workpiece is exposed and exposed. The portion, or vice versa, is removed by etching to form a transfer pattern. As an exposure apparatus at that time, in general, a mask aligner that brings an exposure mask into contact with or close to the light source side of the three-dimensional workpiece, or a pattern of the exposure mask is subjected to repeated step exposure on the three-dimensional workpiece with the same or reduced magnification A stepper is used.

  In addition, in some three-dimensional works such as a crystal resonator, a pattern is formed not only on the upper surface and / or the lower surface of the three-dimensional work but also on the side surface. Are known. (For example, refer to Patent Document 1).

  In addition, for example, in order to expose the upper surface or side surface of a three-dimensional workpiece having a trapezoidal or rectangular parallelepiped shape from an oblique upper side of the three-dimensional workpiece (tilt exposure), a light source, an exposure optical system, a three-dimensional workpiece (or a three-dimensional workpiece) There is known an exposure apparatus capable of performing tilt exposure by tilting at least one of a stage / table on which a work is placed) with respect to the optical axis (see, for example, Patent Document 2).

  Further, for example, an exposure apparatus that moves a blade with a mirror tilted at about 45 ° with respect to the optical axis so as to change the beam 90 ° across the projection beam for exposure is known (for example, Patent Documents). (See 3)

  In addition, for a camera in which a general film surface (imaging surface), the lens main surface, and the object surface to be photographed do not intersect in a parallel plane, the Scheimpflug principle (film surface and lens viewed from the side) A bellows type designed based on the principle that when the main surface is tilted so that it intersects at one point on the extension line, the extension line of the focused object surface (object surface) also intersects at that one point) Large and medium sized proof proof cameras are known.

JP 2005-134364 A JP 2005-017273 A JP 2006-339634 A

  However, in order to perform the tilt exposure as described above, it is necessary to tilt the light source and the optical system of the exposure light or tilt the solid work side and fix it, and a complicated apparatus for that purpose is additionally installed. As a result, the exposure apparatus becomes larger / complex / higher cost. In addition, if the exposed surface is not a vertical surface but an inclined surface with respect to the exposure light, the focal position varies along the inclined direction of the exposed surface, and the focusing control becomes complicated, and the side surface of the three-dimensional work Therefore, it is difficult to control the exposure light having substantially uniform light intensity. Therefore, when the three-dimensional work is inclined, the load on the support portion is increased due to its own weight including the inclined lower end side, compared to the case where the three-dimensional work is placed flat on the three-dimensional work placement stage plane. In this case, if the rigidity of the three-dimensional workpiece in the tilt direction is insufficient, the three-dimensional workpiece is deformed, and the focal position fluctuates accordingly, which may reduce the positioning accuracy of the exposure apparatus. Also, when the image of the object plane is tilted by applying the Scheinproof principle and the image of the object plane is not deformed, the image (circuit pattern, etc.) of the object plane (exposure mask pattern) is shine. It is necessary to incline and hold at a predetermined angle according to the proof principle. For this purpose, a dedicated holding means (such as a mask holder) capable of holding the tilt angle at a predetermined angle is required, and the holding means is manufactured at every predetermined angle. As a result, the number of holding means increases, the design and management become complicated, the number of work steps increases, and the cost also increases.

  The present invention has been made in view of the above problems, and a pattern on a mask is formed on the side surface of a solid work at an arbitrary angle including vertical without tilting the light source of exposure light, the exposure optical system, or the solid work. It can be exposed, and the man-hours, time, and cost required for side exposure of a 3D workpiece can be reduced, and the 3D workpiece can be placed flat on the exposure stage surface, preventing a decrease in positioning accuracy of the exposure apparatus. An object of the present invention is to provide an exposure method that can use a conventional means for holding an exposure mask.

  In order to achieve the above object, the exposure apparatus of the present invention is a principal ray of illumination light (for example, a ray that passes through the optical axis in the case of the central portion of the optical system, and is parallel to the optical axis in the case other than the central portion). A projection exposure apparatus capable of exposing the surface of a three-dimensional workpiece having a surface at an arbitrary angle with respect to a light beam passing through the center of the illumination area, and an exposure mask pattern arranged at a right angle to the principal light beam of the illumination light And at least a mirror having a reflecting surface that reflects the illumination light that has passed through the exposure mask pattern toward each imaging plane on the plurality of three-dimensional workpieces at a predetermined inclination angle with respect to the principal ray. Then, pattern exposure is simultaneously performed on the side surfaces of a plurality of three-dimensional workpieces within the exposure width by the exposure mask pattern and the corresponding mirror.

  Preferably, the exposure mask pattern of the exposure apparatus according to the present invention forms an image on the object surface in accordance with the amount of the object surface pattern that is stretched and imaged in accordance with each inclination angle of the image formation surface. In some cases, it may be formed by reducing in advance the direction of stretching.

  Preferably, in the mirror of the exposure apparatus of the present invention, the reflecting surface can be rotated.

  Preferably, the mirror of the exposure apparatus of the present invention has a plurality of reflection surfaces, and the exposure mask pattern has a mask pattern surface corresponding to each reflection surface.

  Preferably, the exposure apparatus of the present invention may have an illumination blind that can partially select the irradiation light by partially blocking the irradiation light to the plurality of reflecting surfaces.

  Preferably, each reflecting surface of the mirror of the exposure apparatus according to the present invention is configured to be able to reflect the corresponding illumination light toward each surface of the three-dimensional workpiece having a plurality of surfaces in different directions.

  Preferably, the exposure mask pattern of the exposure apparatus of the present invention is arranged such that a plurality of rows are arranged in parallel, and the corresponding mirror is also arranged in a plurality of rows in parallel.

  According to the exposure apparatus of the present invention, the exposure mask pattern arranged at right angles to the chief ray of the illumination light, and the illumination light that has passed through the exposure mask pattern at a predetermined inclination angle with respect to the chief ray, By having at least a mirror having a reflecting surface that reflects toward each imaging surface on a plurality of three-dimensional workpieces, man-hours, time, and cost required for imaging and exposing a mask pattern on the side surface of the three-dimensional workpiece Can be suppressed. Further, according to the exposure apparatus of the present invention, even when a mask pattern is imaged on the side surface of the three-dimensional work, it is not necessary to hold the three-dimensional work obliquely and can be placed flat on the exposure stage surface. Therefore, it is possible to suppress a decrease in positioning accuracy of the exposure apparatus.

It is the schematic which showed the schematic structure of the optical system in a general projection exposure apparatus in the longitudinal cross section. FIG. 2 is a schematic view showing the front and rear of a projection lens assembly in the projection exposure apparatus of FIG. FIG. 3 is a schematic diagram showing a case where an object surface of a minute area is provided around each of points A1, A2, and A3 on the object surface in FIG. FIG. 4 is a schematic diagram illustrating a case where an image is formed by tilting a minute imaging surface in FIG. 3 at a predetermined inclination angle. It is a figure which shows a mode that the exposure possible width | variety changes with the height of a workpiece | work at the time of the side exposure of a workpiece | work, and a focal depth. FIG. 5 is a schematic diagram of the first embodiment showing a case where a minute imaging surface is imaged at an arbitrary inclination angle by changing the direction of illumination light in the minute region of FIG. 4 with a surface reflection mirror. . FIG. 6 is a schematic diagram of the second embodiment showing that irradiation light from a minute object surface can be reflected by a surface reflection mirror other than the inclination angle of FIG. is there. FIG. 7 is a schematic diagram of a third embodiment showing a configuration of an illumination optical system in the case of selectively switching the supply of illumination light to an arbitrary minute object surface on the object surface in the exposure system configured as shown in FIG. 6. . FIG. 9 is a schematic diagram of a fourth embodiment illustrating a configuration in which a plurality of minute object surfaces (masks) and a plurality of surface reflection mirrors of FIG. 8 are integrated. (A) to (f) are XYZ rotary stages in repeated exposure performed when there are a plurality of three-dimensional workpieces on the XYZ rotary stage in the exposure shown in FIG. 9 and they are arranged according to a predetermined rule. It is a figure which shows the operation | movement of and switching of the illumination light by an illumination blind. (A)-(b) is a figure which shows the example of the shape and arrangement | sequence of several solid workpieces on the XYZ rotation stage 80. FIG. It is a figure which shows the structure in the case of exposing the 4 direction side surface of a some solid workpiece with one exposure machine. (A)-(h) is a figure which shows an example of the exposure method to the several solid workpiece arranged on the XYZ rotation stage 80. FIG. (A) is a figure which shows the case where several rows of mask patterns are provided in the same direction, (b) is the figure which shows the case where several rows of corresponding mirrors are provided in the same direction.

  Hereinafter, embodiments of a three-dimensional workpiece exposure method, an exposure apparatus, and an exposure mask pattern according to the present invention will be described with reference to the drawings.

<Description of peripheral technology>
FIG. 1 is a schematic diagram showing a schematic configuration of an optical system in a general projection exposure apparatus that performs projection exposure, such as a stepper, in a longitudinal section. The chief ray 100 is a chief ray of the illumination light 200 emitted from the secondary light emitting surface 51 and illuminating the object surface 10. When the illumination light 200 emitted from the secondary light emitting surface 51 around the principal ray 100 passes through the condenser lens 52, the illumination surface is a plane perpendicular to the principal ray 100 and parallel to the imaging surface 30 by the Kohler illumination means. 60 is illuminated uniformly. This optical system is a telecentric optical system on the object side. On the illumination surface 60, an exposure mask such as a reticle mask on which an exposure pattern is drawn is arranged, and the object surface 10 is a plane perpendicular to the principal ray 100 and parallel to the imaging surface 30. Therefore, the illumination surface 60 and the object surface 10 coincide.

  The secondary light emitting surface 51 converts illumination light (exposure light) such as a lamp (light source) of an exposure apparatus (not shown) into illumination light (exposure light) capable of uniform illumination by passing through an optical system such as an integrator. It is the converted light emitting surface. As a light source of illumination light, for example, output light of a high pressure mercury lamp that emits i-line (wavelength 365 nm) or g-line (wavelength 436 nm) is output as parallel light by an optical system, KrF excimer laser (wavelength 248 nm), ArF An excimer laser (wavelength 193 nm) or the like is used.

  The object plane 10 is a plane coinciding with the illumination plane 60 perpendicular to the principal ray 100, and an exposure mask to be exposed is disposed. The projection lens assembly 20 allows only a limited numerical aperture of illumination light 200 to pass between the first lens 21 on the object plane 10 side, the second lens 22 on the imaging plane 30 side, and both lenses. It has a diaphragm 23 to be limited, and is designed / manufactured so that the optical path length of light on any path on the diaphragm 23 is the same. The illumination light 200 transmitted through the object plane 10 reaches the projection lens assembly 20, and the projection lens assembly 20 forms an image plane 30 whose pattern on the object plane 10 is perpendicular to the principal ray 100 and parallel to the object plane 10. Imaged. This optical system is a telecentric optical system on the image side, and forms an image only with light having a limited numerical aperture.

  A first point located near one end of the diameter on the object plane 10 is A1, and a second point that is located at the center of the object plane 10 and is an intersection with the principal ray 100 is A2. Let A3 be the third point located near the other end of the diameter. The chief ray 110 is the chief ray of the first illumination light 210 emitted from the first point A1 on the object plane 10 and imaged at the corresponding first point A1 'on the image plane 30. Similarly, the principal ray 120 is a principal ray of the second illumination light 220 emitted from the second point A2 on the object plane 10 and imaged at the corresponding second point A2 ′ on the imaging plane 30. The chief ray 130 is a chief ray of the third illumination light 230 emitted from the third point A3 on the object plane 10 and imaged at the corresponding third point A3 ′ on the image plane 30.

  FIG. 2 is a schematic view showing the front and rear of the projection lens assembly in the projection exposure apparatus of FIG. The point D1 is a point at one end of the diameter at the opening of the diaphragm 23. A point D2 is a central point intersecting with the principal ray 120 on the aperture plane of the stop 23, and the principal ray 110 and the principal ray 130 also intersect at an angle at this point D2. The point D3 is a point at the other end of the diameter (including the point D1) in the opening of the diaphragm 23.

  The first illumination light 210 is emitted from the first point A <b> 1 and is imaged at the first point A <b> 1 ′ on the corresponding image plane 30 via the projection lens assembly 20. Similarly, the second illumination light 220 is emitted from the second point A <b> 2 and imaged at the second point A <b> 2 ′ on the corresponding image plane 30 via the projection lens assembly 20, and the third illumination light 230. Is emitted from the third point A3 and imaged through the projection lens assembly 20 to the corresponding third point A3 ′ on the corresponding image plane 30.

  Here, the illumination light in the projection lens assembly 20 will be described in more detail. The illumination light emitted from the point A 1 on the object plane 10 passes through the first lens 21 on the object side in the projection lens assembly 20 and reaches the stop 23. The diaphragm 23 restricts the illumination light passing therethrough so that only light in the range of the diameters of the points D1 to D3 passes, and the other regions cannot pass. Therefore, only a limited numerical aperture of the illumination light emitted from the points A1, A2, and A3 on the object plane 10 passes through the diaphragm 23.

  In the aperture of the stop 23, the illumination light passing through the principal ray 110 out of the illumination light from the point A1 on the object plane 10 passes through a point D2 where the principal ray 110 and the center of the aperture of the aperture 23 intersect. The remaining illumination light passing through the stop 23 passes between one end (point D1) and the other end (point D3) of the stop 23. Similarly, also in the illumination light emitted from the points A2 and A3 on the object plane 10, the illumination light passing through the principal ray 110 passes through the point D2, and the remaining illumination light passes between the points D1 and D3.

  As shown in FIG. 2, the optical system on the object side of the projection lens assembly 20 has illumination light passing through a point D2, which is the center of the stop 23, at points A1, A2, and A3 on the object plane 10. This is an optical system that passes perpendicularly through the object plane 10, that is, an object-side telecentric optical system. In general, the object side telecentric optical system is often configured as described above. Further, the illumination light that has passed through the stop 23 passes through the second lens 22 in the projection lens assembly 20, is emitted from the projection lens assembly 20, and is connected to points A 1 ′, A 2 ′, and A 3 ′ on the image plane 30. Image. At this time, since the illumination light is limited by the diaphragm 23, an image is formed with a certain limited numerical aperture. In particular, the illumination light passing through the center D2 of the stop 23 is often configured as an optical system that is perpendicular to the image plane at each point A1 ', A2', and A3 ', that is, an image side telecentric optical system.

  When the projection lens assembly 20 forms the illumination light from the point A1 on the object plane 10 at the point A1 ′ on the image plane 30, the illumination through any of the points D1, D2, and D3 on the stop 23 is performed. Even light is designed and manufactured so that each optical path length is the same. Similarly, in the case of imaging from A2 to A2 'and from A3 to A3', the same optical path length is obtained through any of the points D1, D2, and D3 on the stop 23. Here, the illumination light emitted from the point A1 and passing through any one of the paths D1, D2, and D3 and forming an image at the point A1 ′ passes through any of the points D1, D2, and D3 on the stop 23. Since the optical path lengths are the same for the illumination light, “optical path length 1” is set. Similarly, the illumination light emitted from the point A2 and imaged at the point A2 'is “optical path length 2”, and the illumination light emitted from the point A3 and imaged at the point A3 ′ is “optical path length 3”. Then, the following equations are established for the optical path lengths 1 to 3 passing through any one of the paths D1, D2, and D3 on the diaphragm 23.

Optical path length 1: A1D1A1 ′ = A1D2A1 ′ = A1D3A1 ′ (1)
Optical path length 2: A2D1A2 ′ = A2D2A2 ′ = A2D3A2 ′ (2)
Optical path length 3: A3D1A3 ′ = A3D2A3 ′ = A3D3A3 ′ (3)

  Further, when the object plane 10 is a plane, the imaging plane 30 is a plane, and the condition that the object plane 10 and the imaging plane 30 are parallel is satisfied, the optical path length 1 = the optical path length 2 = the optical path length 3 is satisfied. All the optical path lengths from the surface 10 to the imaging surface 30 are substantially equal. Further, when the optical path lengths are not equal, that is, the reason why the micro area optical path length 1, the optical path length 2, and the optical path length 3 are slightly different on the plane at points A1, A2, and A3 on the object plane 10 is as follows. For example, the first lens 21 and the second lens 22 of the projection lens assembly 20 have a very small curvature of field in so-called optical aberration.

  FIG. 3 is a schematic diagram showing a case where an object surface of a minute region is provided around each point A1, A2, and A3 on the object surface 10 in FIG. For example, a circular minute plane area is set around the point A1 on the object plane 10, and points B1 and C1 are set at both ends of one diameter passing through the point A1 in the minute plane area. A minute plane area that includes the diameter B1A1C1 on the object plane 10 and is perpendicular to the principal ray 110 is set as the first minute object plane 11. Similarly, on the imaging plane 30 side, for example, a circular minute plane area is set around the point A1 ′ on the imaging plane 30, and at one end of one diameter passing through the point A1 ′ in the minute plane area. Points B1 ′ and C1 ′ are set. Then, a minute plane area including the diameter B1′A1′C1 ′ on the imaging plane 30 and perpendicular to the principal ray 110 is set as the first minute imaging plane 31. Then, the first telecentric light 310 that has passed through the first minute object plane 11 forms an image on the first minute imaging plane 31 via the projection lens assembly 20.

  Similarly, the second minute object surface 12 including the diameters B2A2C2 around the points A2 and A3 on the object surface 10 and the third minute object surface 13 including the diameter B3A3C3 are set, and the points on the image plane 30 are set. A second minute object surface 32 including a diameter B2′A2′C2 ′ and a third minute object surface 33 including a diameter B3′A3′C3 ′ are set around A2 ′ and A3 ′. Then, the second telecentric light 320 that has passed through the second minute object surface 12 forms an image on the second minute image forming surface 32 via the projection lens assembly 20, and the third telecentric light that has passed through the third minute object surface 13. The light 330 forms an image on the third minute imaging surface 33 via the projection lens assembly 20.

  At this time, if the curvature of field of the projection lens assembly 20 is negligibly small, the following equation is established for each of the optical path lengths 4 to 6 passing at least the point D2 on the stop 23.

Optical path length 4: A1D2A1 ′ = B1D2B1 ′ = C1D2C1 ′ (4)
Optical path length 5: A2D2A2 ′ = B2D2B2 ′ = C2D2C2 ′ (5)
Optical path length 6: A3D2A3 ′ = B3D2B3 ′ = C3D2C3 ′ (6)

  FIG. 4 is a schematic diagram showing a case where an image is formed by tilting a minute imaging plane at a predetermined inclination angle without tilting the minute object surface in FIG. In the present specification, unless otherwise specified, the inclination angle is not an inclination angle with respect to a horizontal plane but an inclination angle with respect to a principal ray. When an image is formed by inclining the minute imaging plane, the imaging performance including the depth of focus of the projection lens assembly 20 is maintained. More specifically, for example, the first micro imaging surface 31a is imaged by tilting the virtual first micro imaging surface 31z at a predetermined inclination angle θ1. Similarly, the second minute imaging surface 32a is imaged by inclining the virtual second minute imaging surface 32z at a predetermined inclination angle θ2, and the virtual third third imaging surface 33a at the predetermined inclination angle θ3. An image is formed by tilting the imaging surface 33z. However, in the case of FIG. 4, the image of the object plane is originally formed on each virtual minute imaging plane, and is stretched in the tilt direction according to each tilt angle of the actual imaging plane. Thus, the image is distorted.

  In order to avoid this, the object surface pattern is reduced in advance in the direction in which the object surface pattern is extended in accordance with the amount of the object surface pattern that is extended and imaged according to each inclination angle of the image forming surface. It becomes possible to respond by forming. The following pattern of the object plane is assumed to have been reduced in advance in the direction of stretching during imaging unless otherwise specified.

  5A and 5B, the angle θ of the work 71 with respect to the illumination light (exposure light) 200 during exposure of the side surface 31a of the work 71, the height h of the work 71, and the range 400 of the depth of focus D, It is a figure which shows a mode that the exposure possible width W changes by this. FIG. 5C shows that by making the angle θ of the illumination light (exposure light) 200 narrower, side exposure can be performed even when the interval w2 between the workpieces 71 is narrow. In FIG. 5C, it can be seen that the exposure width W varies depending on the width w1 of each workpiece and the interval w2 between the workpieces 71.

The decrease in the amount of illumination light can be obtained by the following equation, assuming that the original light amount is 100 mW, for example, when the angle θ with respect to the illumination light (exposure light) 200 is 90 °, that is, a right angle.
(1) When θ = 90 °: 100 × sin 90 ° = 100 mW
(2) When θ = 45 °: 100 × sin45 ° = 70 mW
(3) When θ = 30 °: 100 × sin 30 ° = 50 mW

Exposure time t∝ (1 / sinθ)
Dimensional elongation E∝ (1 / sinθ)
When sinnθ at the center point of the exposure possible width W is δ,
δ = (θ / 2) / cos θ
Exposure width W = 2 (δ−h / 2) / tan θ

D = I (0.5λ) / (NA) ↑ 2
D = R / k (NA) ↑ 2 ... (k: 0.6 to 0.7)
When λ: 0.365 nm and NA: 0.04, limiting resolution R: 5 μm, depth of focus D: ± 100 μm
Limit resolution R: 10 μm, depth of focus D: ± 200 μm
Limit resolution R: 20 μm, depth of focus D: ± 400 μm
Limit resolution R: 30 μm, depth of focus D: ± 800 μm
And the depth of focus D increases as the critical resolution R increases.

<First Embodiment>
In FIG. 6, it is possible to change the direction of the illumination light in the minute area of FIG. 4 with the surface reflection mirror, thereby converting the tilt angle of the minute image plane to an arbitrary tilt angle and form an image. It is a schematic diagram of a 1st embodiment showing that there is. More specifically, in FIG. 6, illumination light emitted from a minute region of the object surface 10 such as the first minute object surface 11, the second minute object surface 12, and the third minute object surface 13 as shown in FIG. By changing the direction of the illumination light after passing through the projection lens assembly 20 by the surface reflection mirrors 41, 42, 43, the first micro imaging surface having an arbitrary inclination angle such as vertical or horizontal 31b (the tilt angle at which the virtual first micro imaging surface 31z is inclined is vertical), the second micro imaging surface 32b (the tilt angle at which the virtual second micro imaging surface 32z is tilted is horizontal), the third micro imaging surface This shows that it is possible to form an image on 33b (the tilt angle at which the virtual third minute imaging surface 33z is tilted is vertical).

  In the case of the present embodiment as well, the object plane pattern corresponds to the amount of the image formed by being distorted so as to be stretched in the tilt direction according to each tilt angle of the actual image plane. The surface pattern is formed by reducing the size and shape by a corresponding amount in the direction to be stretched at the time of image formation. The formation of the object surface pattern by reducing it in the extending direction at the time of image formation is the same unless otherwise specified in all of the following embodiments.

  Hereinafter, for ease of explanation, the magnification β of the projection lens assembly 20 in FIG. In FIG. 6, when forming an image on the first minute imaging surface 31b which is a vertical surface, for example, the inclination angle θ1 ″ of the first surface reflecting mirror 41 is set to − (θ1) /2=−22.5°. Thus, an image can be formed by the irradiation light from the upper left side. When forming an image on the third minute image forming surface 33b which is a vertical surface, for example, the inclination angle θ3 ″ of the third surface reflecting mirror 43 = By setting − (θ3) /2=+22.5°, an image can be formed by irradiation light from the upper right side. In the case of forming an image on the second minute imaging surface 32b which is a horizontal plane, for example, by setting the inclination angle θ2 ″ = − (θ2) /2=+22.5° of the second surface reflection mirror 42 to the upper right side. The image can be formed by the irradiation light from.

Second Embodiment
FIG. 7 shows a vertical plane in which irradiation light from the first to third minute object surfaces 11 to 13 of FIG. 6 is reflected by the first to third surface reflecting mirrors 41 to 43 having a predetermined inclination angle θ1 ″ = ± 22.5 °. Schematic diagram of the second embodiment showing that it is possible to form an image on the minute image forming surfaces 31b to 33b using a surface reflecting mirror other than the predetermined inclination angle θ1 ″ = ± 22.5 °. It is. Also in FIG. 7, the magnification β of the projection lens assembly 20 is set to 1 for easy explanation.

  In FIG. 7, when forming an image on the first minute imaging surface 31c which is a vertical surface, for example, the inclination angle θ1 ″ of the first surface reflection mirror 41c is set to − (θ1) /2=−22.5°. Thus, an image can be formed by irradiation light from the upper left side. When forming an image on the third minute image forming surface 33c which is a vertical surface, for example, the inclination angle θ3 ″ of the third surface reflecting mirror 43c = By setting − (θ3) / 2 = −30 °, it is possible to form an image by irradiation light from the upper left side. In the case of forming an image on the second minute imaging surface 32c which is a horizontal plane, for example, by setting the inclination angle θ2 ″ = − (θ2) / 2 = −15 ° of the second surface reflection mirror 42c, the diagonally upper right side. It is possible to form an image with the irradiation light.

<Third Embodiment>
FIG. 8 shows the configuration of the illumination optical system in the case where the illumination light supply to an arbitrary minute object surface on the object surface is selectively switched in the exposure system configured as shown in FIG. FIG. In general, the illumination light supply in FIG. 8 may be performed by using a normal illumination optical system having the secondary light emitting surface 51, the condenser lens 52 and the like as shown in FIG. To switch the supply of illumination light (exposure light) to the minute object surface, the illumination light other than the desired minute object surface is shielded on the light source (secondary light emitting surface 51) side of the object surface 10 in the exposure system, An illumination blind 53 of a partial light blocking mechanism having an illumination area selection opening 54 capable of supplying illumination light only to a target minute object surface is used. The illumination blind 53 moves the position of the illumination area selection opening 54 by a control device and a drive device (not shown), so that the illumination blind 53 is connected to the first micro-imaging surface 31b which is a vertical surface by irradiation light from the upper left side. An image, an image formed on the third minute imaging surface 33b that is a vertical surface by irradiation light from the upper right side, and an image formed on the second minute imaging surface 32b that is a horizontal surface by irradiation light from the upper right side It is possible to perform exposure by switching between the two.

  As shown in FIG. 1, if the object surface is horizontal, the object surface 10 = illumination surface 60, and the minute object surface 11 as shown in FIG. One minute illumination surface 61 corresponds. Similarly, the minute object surface 12 corresponds to the second minute illumination surface 62 that is horizontal in the same plane as the minute object surface 12, and the minute object surface 13 is horizontal in the same plane as the minute object surface 13. The third minute illumination surface 63 corresponds. In FIG. 8, the illumination blind 53 supplies illumination light only to the first minute illumination surface 61 through the illumination area selection opening 54, and other than the first minute illumination surface 61 (for example, the second minute illumination surface 62 and the third minute illumination surface). Illumination light to the illumination surface 63 or the like is shielded. Therefore, in the case shown in FIG. 8, the first telecentric light that has passed only the pattern on the minute object surface 11 (mask) by irradiating only the first minute illumination surface 61 by switching the illumination blind 53. 310 can be imaged by irradiation light from the upper left side to the first minute imaging surface 31b which is a vertical surface via the projection lens assembly 20.

  Similarly, by switching the illumination blind 53, the second telecentric light 320 that has passed through only the pattern on the minute object surface 12 (mask) by irradiating only the second minute illumination surface 62 is projected to the projection lens assembly 20. Then, an image can be formed on the second minute imaging surface 32b, which is a horizontal plane, by irradiation light from the upper right side. Further, by switching the illumination blind 53, the third telecentric light 330 that has passed through only the pattern on the minute object surface 13 (mask) is irradiated via the projection lens assembly 20 by irradiating only the third minute illumination surface 63. Thus, an image can be formed on the third minute imaging surface 33b, which is a vertical surface, by irradiation light from the upper right side. By performing the control for switching the illumination blind 53 in this way together with the control of the XYZ rotation stage of a general projection exposure apparatus, for example, a rectangular parallelepiped (hexahedron) shape or a flat plate shape having a side surface having a thickness. A circuit pattern or the like on a mask is projected and exposed on the surface of the four side surfaces in addition to the upper surface of the three-dimensional workpiece, and the circuit pattern or the like can be formed by a photolithography technique.

<Fourth embodiment>
FIG. 9 is a schematic diagram of the fourth embodiment showing a configuration in which the first to third minute object surfaces 11 to 13 (mask) and the first to third surface reflecting mirrors 41 b to 43 b of FIG. 8 are integrated. It is. The integration of components is considered from the viewpoint of design, ease of control / efficiency, and reduction of the number of components when the present invention is applied to an actual projection exposure apparatus.

  In FIG. 9, a mask 15 is provided at a position corresponding to the object plane 60 of FIG. 8 (including the first minute illumination surface 61, the second minute illumination surface 62, the third minute illumination surface 63, etc.). The same first mask pattern 16 and third mask pattern 18 are integrally held at positions corresponding to the first first and second minute object surfaces 11 and 13, and are not shown in FIG. As shown in FIG. 12, the same second mask pattern 17 and fourth mask pattern 19 are integrally held at positions orthogonal to them. Each of the mask patterns 16 to 19 is engraved in a line shape. In FIG. 9, the mask pattern 16 that can be imaged on the first imaging plane 36 that is a vertical plane by irradiation light from the upper left side. The third mask pattern 18 that can be imaged on the third imaging plane 38 that is a vertical plane by the irradiation light from the upper right side is held on the mask 15.

  The four-surface reflecting mirror 45 is a quadrangular pyramid trapezoid having four side surfaces obtained by cutting out the upper portion of the quadrangular pyramid shape, and is installed coaxially with the principal ray 120, and the first to third surface reflections of FIG. The first reflection surface 46b and the second reflection surface 47b are provided at the same angle as the mirrors 41b to 43b, and the third reflection surface 48b and the fourth reflection surface 49b shown in FIG. Mirror.

  The first three-dimensional workpiece 71 has, for example, an upper surface, a lower surface, and four side surfaces perpendicular to them (a first image plane 36, a second image plane 37, a third image plane 38, and a fourth image plane 39). It is a rectangular parallelepiped (hexahedron), which is a three-dimensional work on which a circuit pattern or the like on a mask is projected and exposed on each surface, and a circuit pattern or the like can be formed by a photolithography technique.

  The XYZ rotary stage 80 is a stage for placing the first three-dimensional work 71 exposed by the exposure apparatus and positioning for exposure. For example, in the state where the three-dimensional work is placed, the X direction, the Y direction, It is an XYZ rotary stage that can move in the Z direction and can further rotate. Accordingly, the first three-dimensional work 71 is held on the XYZ rotation stage 80 and can move in the XYZ rotation direction. When the first three-dimensional work 71 is subjected to side exposure using the four-surface reflecting mirror 45, it is usually necessary to bring the first three-dimensional work 71 closer to the projection lens assembly 20 by inclining the principal ray. Lifted in the Z direction.

  The alignment such as the position of the first three-dimensional work 71 is adjusted by control means such as a computer (not shown) based on position information detected by the alignment camera 90 installed in the vicinity of the projection lens assembly 20.

  In the case shown in FIG. 9, the first telecentric light 310 that has passed through only the first mask pattern 16 is projected by irradiating only the first mask pattern 16 on the mask 15 by switching the illumination blind 53. Through the lens assembly 20, an image can be formed on the first imaging surface 36 of the first three-dimensional work 71, which is a vertical surface, by irradiation light from the upper left side. In the case of this embodiment as well, if the mask patterns 16 and 18 and the imaging planes 36 and 38 can be imaged even if they are tilted, the imaging performance including the depth of focus of the projection lens assembly 20 is achieved. It is valid in the range to be preserved.

  Further, in the case shown in FIG. 9, the illumination blind 53 is similarly switched, and the position of the first three-dimensional workpiece 71 is aligned by the XYZ rotary stage 80, thereby irradiating only the third mask pattern 18. The third telecentric light 330 that has passed through only the three mask patterns 18 can be imaged onto the third imaging surface 38 of the first three-dimensional workpiece 71 that is a vertical surface by irradiation light from the upper right side.

  Furthermore, as shown by referring to FIG. 12 in addition to FIG. 9, the illumination blind 53 is similarly switched, and the position of the first three-dimensional work 71 is aligned accordingly, so that only the second mask pattern 17 is irradiated. As a result, the second telecentric light 320 having passed only through the second mask pattern 17 can be imaged onto the second imaging surface 37, which is a vertical surface, by irradiation light from obliquely above. By irradiating only the mask pattern 19, the fourth telecentric light 340 that has passed through only the fourth mask pattern 19 can be imaged onto the fourth imaging plane 39 that is a vertical plane by irradiation light from obliquely above. .

  For example, in the case where an image is formed on the first imaging surface 36 that is the left side surface of the first three-dimensional workpiece 71 in FIG. The XYZ rotary stage 80 is moved to an alignment camera so that the first imaging surface 36 on the left side of the first three-dimensional work 71 can be imaged by the irradiation light from the diagonally upper left side reflected by the first reflecting surface 46b. It moves based on the 90 position information. At the same time, the illumination blind 53 is switched so that only the first mask pattern 16 on the mask 15 is irradiated. Thereafter, the shutter of the lamp is operated and illuminated so that the secondary light emitting surface 51 has a desired exposure amount. As a result, only the first mask pattern 16 can be exposed to the first image plane 36 which is the vertical left side surface of the first three-dimensional workpiece 71.

  Next, when an image is formed on the third imaging surface 38 that is the right side surface of the first three-dimensional workpiece 71 in FIG. 9 by irradiation light from the upper right side, the position of the first three-dimensional workpiece 71 is set to the four-surface reflecting mirror 45. The XYZ rotary stage 80 is aligned so that the third imaging surface 38 on the right side of the first three-dimensional workpiece 71 can be imaged by the irradiation light from the upper right side reflected by the second reflecting surface 47b. It is moved based on the position information of the camera 90. At the same time, the illumination blind 53 is switched so as to irradiate only the third mask pattern 18 on the mask 15. Thereafter, the shutter of the lamp is operated and illuminated so that the secondary light emitting surface 51 has a desired exposure amount. As a result, only the third mask pattern 18 can be exposed to the third imaging plane 38 which is the vertical right side surface of the first three-dimensional workpiece 71.

  10A to 10F are performed when there are a plurality of first solid workpieces 71 on the XYZ rotary stage 80 in the exposure shown in FIG. 9 and they are arranged according to a predetermined rule. It is a figure which shows operation | movement of the XYZ rotation stage 80 in the step and repeat exposure to be performed, and switching of the illumination light by the illumination blind 53. On the XYZ rotary stage 80 shown in FIGS. 10A to 10F, the first three-dimensional work 71, the second three-dimensional work 72, and the third three-dimensional work 73 are arranged with a predetermined interval.

  First, in FIG. 10A, the first image pattern 36 that has passed only the first mask pattern 16 with respect to the first imaging surface 36 that is the vertical left side surface of the first three-dimensional workpiece 71 on the left end on the XYZ rotary stage 80. Telecentric light 310 is irradiated, and the first image plane 36 of the first three-dimensional work 71 is exposed. In FIG. 10B, the XYZ rotary stage 80 is moved to the left by a predetermined distance corresponding to the interval between the workpieces, and the first image forming the vertical left side of the second solid workpiece 72 in the middle. The surface 36 is irradiated with the first telecentric light 310 that has passed only through the first mask pattern 16, and the first imaging surface 36 of the second three-dimensional work 72 is exposed. In FIG. 10C, the XYZ rotary stage 80 is once again moved to the left by a predetermined distance corresponding to the interval between the workpieces, and the first left side surface of the third solid workpiece 73 at the right end is the first left side. The imaging surface 36 is irradiated with the first telecentric light 310 that has passed only the first mask pattern 16, and the first imaging surface 36 of the third three-dimensional work 73 is exposed. The above operation is repeated by step-and-repeat exposure for the number of three-dimensional workpieces arranged in one row, and when the last first imaging plane 36 of the three-dimensional workpiece arranged in the last row is exposed, the last three-dimensional workpiece is exposed. The XYZ rotary stage 80 is moved to the left to a position where the third telecentric light 330 that has passed through only the third mask pattern 18 can be irradiated onto the third imaging plane 38 that is the vertical right side surface of the workpiece. This movement may be longer than the movement distance during step-and-repeat.

  Next, in FIG. 10D, the third image pattern 38 that has passed only the third mask pattern 18 with respect to the third imaging surface 38 that is the vertical right side surface of the third solid workpiece 73 at the right end on the XYZ rotary stage 80 is shown. The third telecentric light 330 is irradiated, and the third imaging plane 38 of the third three-dimensional work 73 is exposed. In the next FIG. 10E, the XYZ rotary stage 80 is moved to the right by a predetermined distance corresponding to the interval between the workpieces, and the third imaging that is the vertical right side surface of the second solid workpiece 72 in the middle. The surface 38 is irradiated with the third telecentric light 330 that has passed through only the third mask pattern 18, and the third imaging surface 38 of the third three-dimensional work 73 is exposed. Further, in FIG. 10F, the XYZ rotary stage 80 is once again moved to the right by a predetermined distance corresponding to the interval between the workpieces, and the third right side surface of the first three-dimensional workpiece 71 at the left end is the third right side surface. The image forming surface 38 is irradiated with the third telecentric light 330 that has passed only through the third mask pattern 18, and the third image forming surface 38 of the first three-dimensional work 71 is exposed. The above operation is repeated by step-and-repeat exposure for the number of three-dimensional works arranged in one row, and when the last third imaging plane 38 of the three-dimensional work arranged at the end of one row is exposed, the next three-dimensional work is obtained. The above process is repeated, and the process ends when there are no unprocessed columns.

  FIGS. 11A and 11B are diagrams showing examples of shapes and arrangements of a plurality of three-dimensional workpieces on the XYZ rotary stage 80. FIG. In FIG. 11A, the three-dimensional workpieces 71a to 78a that are repeatedly arranged at predetermined equal intervals on the XYZ rotary stage 80 are regular cubes that are repeatedly arranged at intervals that allow step-and-repeat exposure. It is desirable for step-and-repeat exposure that the exposure surfaces of the regular cube are arranged on a straight line. In FIG. 11B, the three-dimensional works 71b to 76b repeatedly arranged at predetermined equal intervals on the XYZ rotary stage 80 are rectangular parallelepipeds, and regular cubes repeatedly arranged at intervals capable of step-and-repeat exposure. In particular, it is desirable that the exposure surfaces of the regular cubes are arranged in a straight line for the step-and-repeat exposure.

  FIG. 12 is a diagram showing a configuration in the case where the four-direction side surfaces of a plurality of three-dimensional workpieces 71c to 75c are exposed with one exposure machine. On the mask 15, the first mask pattern 16 to the fourth mask pattern 19 in four directions are provided at an inclination angle of 45 ° in the respective directions as shown in FIG. 9. Each of the mask patterns 16 to 19 is a horizontally long rectangle, and it is desirable that a plurality of identical patterns be provided in a row so that exposure is possible on each side surface on the same side of a plurality of workpieces arranged in a row. The surface reflecting mirror 45 under the projection lens assembly 20 has a quadrangular pyramid shape as described with reference to FIG. 9, and each surface has a principal ray 120 or an axis parallel to the principal ray 120. It is processed to be 5 ° (67.5 ° with respect to the horizontal plane). Each part is configured such that the first mask pattern 16 to the fourth mask pattern 19 are projected onto the first imaging plane 36 to the fourth imaging plane 39. The first mask pattern 16 to the fourth mask pattern 19 in the four directions can be individually shielded by an unillustrated illumination blind (reference numeral 53 in FIG. 8 or FIG. 9). As shown in FIG. 12, a mask pattern in four directions is set on the mask 15, and the surface reflection mirror 45 and the XYZ rotary stage 80 that can reflect in four directions are appropriately controlled to perform step-and-repeat exposure in four directions, respectively. Thus, it is possible to expose the side surfaces in the four directions of the three-dimensional workpieces 71c to 75c with a single exposure machine, thereby reducing the cost and the number of exposure steps.

  FIG. 13 is a diagram illustrating a method of performing batch exposure by step-and-repeat exposure on the same side surface of a plurality of aligned workpieces using a mask pattern. In FIG. 13A, the right side surface 410 of each workpiece in the first column is exposed from the left upper edge in the drawing with illumination light obliquely from the upper left as shown in FIGS. Next, as shown in FIG. 13 (b), the right side surface 420 of each workpiece in the second column is exposed from the illumination light obliquely from the upper left side from the left end portion in the drawing, and then, FIG. ), The right side surface 430 of each work in the third column is exposed from the illumination light from obliquely upper left from the left end in the drawing. The same operation is repeated for the next column. Finally, as shown in FIG. 13 (d), the illumination light obliquely from the upper left to the right side 490 of each workpiece in the first column from the right end in the drawing. Further exposure is performed, and the right side surface of all workpieces in the figure is exposed.

  Thereafter, in FIG. 13 (e), the front side surface 510 of each work in the first row from the upper end portion in the drawing is exposed from the illumination light from the oblique front side as shown in FIGS. 9, 10, and 12. Do. Next, as shown in FIG. 13 (f), the front side surface 520 of each workpiece in the second row from the upper end in the drawing is exposed by illumination light from obliquely above, and then, FIG. As shown in g), the front side surface 530 of each workpiece in the third row is exposed from the illumination light from obliquely above from the upper end in the drawing. The same operation is repeated for the next row, and finally, as shown in FIG. 13 (h), illumination from the front side obliquely toward the front side surface 590 of each work in the first row from the lower end in the drawing. Exposure is performed from light, and the front side surface of all workpieces in the figure is exposed. By repeating this operation for the remaining surfaces of each workpiece, exposure can be performed on all sides of each workpiece.

<Fifth Embodiment>
FIG. 14 is a diagram showing that a plurality of rows of mask patterns are provided, and a plurality of rows of corresponding mirrors are provided in the same direction, so that one row of exposure with the mask pattern can be performed in a plurality of rows. As shown in FIG. 14A, the third mask patterns 18a, 18b, 18c for the right exposure of the workpiece are arranged in parallel on the mask 15, and similarly the first mask patterns 16a, 16b, 16c for the left exposure of the workpiece. Are arranged in parallel. Further, as shown in FIG. 14B, the first mirrors 41c, 42c, 43c for left side exposure of each workpiece are arranged in parallel, and the third mirrors 41d, 42d, 43d for right side exposure of each workpiece are arranged. Place in parallel. By configuring in this way, one row of exposure with the illumination light 200 that has passed through the mask pattern can be performed in a plurality of rows at once, the number of steps and repeats can be reduced, and the exposure time can be shortened. it can.

  As described above, in the exposure apparatus of each embodiment of the present invention, the pattern on the mask is exposed on the side surface of the solid work at an arbitrary angle including the vertical without tilting the light source of the exposure light, the exposure optical system, or the solid work. Therefore, it is possible to reduce the man-hours, time, cost, and number of masks required for exposure, and furthermore, it is possible to place a three-dimensional work flat on the exposure stage surface, and to suppress a decrease in positioning accuracy of the exposure apparatus. .

  In addition, by applying the above-described present invention, it becomes possible to simultaneously expose four sides in a one-dimensional work set and further expose a top surface, to allow step-and-repeat exposure of the in area, and to incline expose the side surface. The minimum line width can be reduced, an existing projection exposure lens can be used, and even an existing projection exposure lens can cope with a large wafer, thereby suppressing an increase in cost.

10 object plane (perpendicular to chief ray),
11 First minute object plane (perpendicular to chief ray),
11a A first minute object surface (of a first inclination angle θ1),
11b, 11c The first minute object surface (of the first inclination angle −θ1),
12 Second micro-object surface (perpendicular to the chief ray),
12a, a second minute object surface (with a second inclination angle θ2),
12b a second minute object surface (of second inclination angle −θ1),
12c a second minute object surface (of the second inclination angle θ2),
13 Third micro-object surface (perpendicular to chief ray),
13a A third minute object surface (with a third inclination angle θ3),
13b A third minute object surface (with a third inclination angle θ1),
13c A third minute object surface (with a third inclination angle θ3),
15 mask,
16 First mask pattern,
17 Second mask pattern,
18 Third mask pattern,
19 Fourth mask pattern,
20 projection lens assembly;
21 first lens,
22 Second lens,
23 Aperture,
30 imaging plane,
31 1st micro imaging surface,
31a A first micro-imaging plane (of the first tilt angle θ1 ′),
31b, 31c first micro-imaging plane (of the first reflection angle θ1 ″),
32 Second micro-imaging plane,
32a, a second micro-imaging plane (with a second tilt angle θ2 ′),
32b, a second minute imaging plane (of the first reflection angle θ1 ″),
32c, a second micro-imaging plane (with a second reflection angle θ2 ″),
33 Third micro-imaging plane,
33a, a third micro-imaging plane (with a third tilt angle θ3 ′),
33b, a third micro-imaging surface (reflected by a mirror (reflection surface) having a first reflection angle θ1 ″),
33c, a third micro-imaging surface (reflected by a mirror (reflection surface) having a third reflection angle θ3 ″),
34b, a fourth micro-imaging surface (reflected by a mirror (reflection surface) having a first reflection angle θ1 ″),
36 a first imaging surface (reflected by a mirror (reflecting surface) having a first reflection angle θ1 ″),
37 a second imaging surface (reflected by a mirror (reflecting surface) having a first reflection angle θ1 ″),
38 a third imaging plane (reflected by a mirror (reflecting surface) having a first reflection angle θ1 ″),
39, a fourth image plane (reflected by a mirror (reflection surface) having a first reflection angle θ1 ″),
41b, 41c first mirror (with a first reflection angle θ1 ″),
42b, a second mirror (of the first reflection angle −θ1 ″),
42c, a second mirror (with a second reflection angle θ2 ″),
43b, a third mirror (with a first reflection angle −θ1 ″),
43c third mirror (with a third reflection angle θ3 ″),
45 Four-sided reflection mirror,
46b The first reflecting surface (of the four-surface reflecting mirror),
47b second reflective surface (of a four-surface reflective mirror),
48b the third reflective surface (of the four-surface reflective mirror),
49b, the fourth reflective surface (of the four-surface reflective mirror),
51 secondary light emitting surface,
52 condenser lens,
53 Lighting blinds,
54 illumination area selection opening,
60 illumination surface (perpendicular to chief ray),
61 First micro-illumination surface (perpendicular to chief ray),
62 a second micro-illumination surface (perpendicular to the chief ray),
63 Third micro-illuminated surface (perpendicular to chief ray),
71, 71a, 71b, 71c, first solid work,
72, 72a, 72b, 72c, second solid work,
73, 73a, 73b, 73c, third solid work,
74, 74a, 74b, 74c, fourth solid work,
75, 75a, 75b, 75c, fifth solid work,
76, 76a, 76b, 76c, sixth solid work,
77, 77a, 77b, 77c, seventh solid work,
78, 78a, 78b, 78c, eighth solid work,
80 XYZ rotary stage,
90 Alliant camera,
100 chief ray (of the illumination light emitted from the secondary light emitting surface),
110 First chief ray (of illumination light emitted from point A1),
120, the second principal ray (of the illumination light emitted from point A2),
130 third chief ray (of illumination light emitted from point A3),
200 Illumination light,
210 first illumination light (emitted from point A1),
220 second illumination light (emitted from point A2),
230 third illumination light (emitted from point A3),
310 first telecentric light (passing through the first minute object surface);
320 second telecentric light (passing through the second minute object surface);
330 third telecentric light (passing through the third minute object surface),
A1 a first point (near one end of the diameter) on the object plane (illumination plane),
A2 (center) second point on the object surface (illumination surface),
A3 A third point (near the other end of the diameter) on the object surface (illumination surface),
A first point (near one end of the diameter) on the imaging plane 30;
A2 ′ a second point (in the center) on the image plane 30,
A3 ′ a third point (near the other end of the diameter) on the imaging plane 30;
One end of the D1 (diaphragm) aperture diameter,
D2 (aperture) aperture center,
D2 the other end of the aperture diameter (of the diaphragm),
θ1 the first tilt angle (of the first minute object surface),
θ2 is the second inclination angle (of the second minute object surface),
θ3, the third tilt angle (of the third minute object surface),
θ1 ′, the first tilt angle (of the first micro-imaging plane),
θ2 ′, the second tilt angle (of the second microimaging plane),
θ3 ′ the third tilt angle (of the third micro-imaging plane),
θ1 ″ first reflection angle (of the first mirror) (= | (θ1) | / 2)
θ2 ″ second reflection angle (of the second mirror) (= | (θ2) | / 2)
θ3 ″ (third mirror) third reflection angle (= | (θ3) | / 2)

Claims (7)

A projection exposure apparatus capable of exposing a surface of a three-dimensional workpiece having a surface at an arbitrary angle with respect to a principal ray of illumination light,
An exposure mask pattern disposed perpendicular to the principal ray;
A mirror having a reflection surface that reflects the illumination light that has passed through the exposure mask pattern toward the imaging surface on the three-dimensional workpiece at a predetermined inclination angle with respect to the principal ray;
Having at least
A projection exposure apparatus that simultaneously performs pattern exposure on the side surfaces of a plurality of three-dimensional workpieces within an exposure-permitted width, using the exposure mask pattern and the corresponding mirror. The first inclination angle and the second inclination angle are:
The projection exposure apparatus according to claim 1, wherein the optical path lengths passing through different paths from an arbitrary point on the exposure mask pattern to a point corresponding to the point on the imaging plane are set to be equal. . The projection exposure apparatus according to claim 1, wherein the mirror is capable of rotating a reflection surface around the principal ray. The mirror has a plurality of the reflective surfaces;
The projection exposure apparatus according to claim 1, wherein the exposure mask pattern has a mask surface corresponding to each of the reflection surfaces. The projection exposure apparatus according to claim 4, further comprising: an illumination blind capable of partially shielding the irradiation light on the plurality of reflecting surfaces and selecting the irradiation light. The projection exposure apparatus according to claim 5, wherein each reflection surface of the mirror is directed to reflect corresponding illumination light toward each surface of the three-dimensional workpiece having a plurality of surfaces in different directions. The projection exposure apparatus according to claim 1, wherein the exposure mask pattern includes a plurality of rows arranged in parallel, and the corresponding mirror also includes a plurality of rows arranged in parallel.

Images