JP2016196678A5 - - Google Patents

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JP2016196678A5
JP2016196678A5 JP2015076204A JP2015076204A JP2016196678A5 JP 2016196678 A5 JP2016196678 A5 JP 2016196678A5 JP 2015076204 A JP2015076204 A JP 2015076204A JP 2015076204 A JP2015076204 A JP 2015076204A JP 2016196678 A5 JP2016196678 A5 JP 2016196678A5
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JP
Japan
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JP2015076204A
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JP2016196678A (ja
JP6666656B2 (ja
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Figure 2016196678
JP2015076204A 2015-04-02 2015-04-02 Rfマグネトロンスパッタリング装置 Active JP6666656B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2015076204A JP6666656B2 (ja) 2015-04-02 2015-04-02 Rfマグネトロンスパッタリング装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2015076204A JP6666656B2 (ja) 2015-04-02 2015-04-02 Rfマグネトロンスパッタリング装置

Publications (3)

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JP2016196678A JP2016196678A (ja) 2016-11-24
JP2016196678A5 true JP2016196678A5 (ja) 2018-05-24
JP6666656B2 JP6666656B2 (ja) 2020-03-18

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JP2015076204A Active JP6666656B2 (ja) 2015-04-02 2015-04-02 Rfマグネトロンスパッタリング装置

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JP (1) JP6666656B2 (ja)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3712296A4 (en) * 2017-11-14 2021-08-11 Dai Nippon Printing Co., Ltd. METAL PLATE FOR THE MANUFACTURE OF VAPOR SEPARATING MASKS, METAL PLATE MANUFACTURING METHODS, STEAM SEPARATING MASK, MANUFACTURING METHODS FOR VAPOR SEPARATING MASK AND STEAM SEPARATING MASK DEVICE WITH STEAM SHIELDING DEVICE
EP3717675B1 (en) * 2017-12-01 2022-09-21 China Triumph International Engineering Co., Ltd. Physical vapor deposition system comprising positioning marker and method for adjusting distance between crucible and substrate
JP7249142B2 (ja) * 2018-12-14 2023-03-30 キヤノントッキ株式会社 搬送キャリア、蒸着装置、および電子デバイスの製造装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013234350A (ja) * 2012-05-08 2013-11-21 Sumitomo Electric Ind Ltd 酸化物超電導線材用の中間層付基材の製造装置および製造方法
WO2015033808A1 (ja) * 2013-09-04 2015-03-12 東洋鋼鈑株式会社 酸化物層の成膜方法、並びにエピタキシャル成長用積層基材及びその製造方法

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