JP2016195235A - Semiconductor inspection device and method for manufacturing the same - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor inspection device and a method for manufacturing the same.SOLUTION: The semiconductor inspection device according to one example, has a substrate where a plurality of electrode pads in which at least a part of them is embedded, are formed; and a plurality of probe pins bonded to upper parts of the plurality of electrode pads respectively, and the fixing strength between the substrate and the plurality of electrode pads can be improved by embedding the plurality of electrode pads inside the substrate.SELECTED DRAWING: Figure 3

Description

  The present invention relates to a semiconductor inspection apparatus and a manufacturing method thereof.

  Recently, with the miniaturization of semiconductors due to the development of semiconductor circuit integration technology, high precision is also required for semiconductor chip inspection devices. An integrated circuit chip formed on a semiconductor wafer through a wafer fabrication process is classified into a non-defective product and a defective product by an electrical property inspection (EDS) performed in a wafer state.

  In the electrical characteristic inspection, a tester (Tester) in charge of generation of inspection signals and determination of inspection results, and a probe station (Probe Station) in charge of loading and unloading of a semiconductor wafer are usually used. An inspection apparatus composed of a probe card that is in charge of electrical connection between a semiconductor wafer and a tester is mainly used.

  Of these, the probe card is usually used mainly in the form that a circuit pattern, an electrode pad, a via electrode, etc. are formed on a ceramic green sheet and laminated, and then the probe pin is bonded to a ceramic substrate manufactured by firing the circuit pattern. It is done.

  An object of the present invention is to provide a semiconductor inspection apparatus and a manufacturing method thereof, and more specifically, a semiconductor inspection apparatus having a stable thin film structure by embedding an electrode in a substrate and a manufacturing method thereof Is to provide.

  A semiconductor inspection apparatus according to an embodiment includes a substrate on which a plurality of electrode pads, at least a part of which are embedded, and a plurality of probe pins respectively joined to the upper portions of the plurality of electrode pads.

  The substrate may include a ceramic substrate and a polymer layer formed on the ceramic substrate, and the plurality of electrode pads may be embedded in the polymer layer.

  The polymer layer may be made of a polyimide material.

  The substrate may have a build-up multilayer thin film structure.

  A solder layer for laser solder may be formed on the surface of the plurality of electrode pads.

  When the electrode pad and the probe pin are separated, laser re-bonding can be performed by the solder layer.

  A method of manufacturing a semiconductor inspection apparatus according to another embodiment includes a step of applying a polymer material on a ceramic substrate to form a polymer layer and curing, and processing at least a part of the polymer layer to form a plurality of layers. Forming a space portion, filling the plurality of space portions by plating to form a plurality of electrode pads on the polymer layer, and bonding a plurality of probe pins on the plurality of electrode pads, respectively. And including.

  In the step of forming the plurality of space portions, the plurality of space portions for embedding the plurality of electrode pads on the surface of the polymer layer can be formed by photolithography (Photo Lithography).

  According to still another embodiment of the present invention, there is provided a method of manufacturing a semiconductor inspection apparatus comprising: forming a plurality of electrode pads by thick plating on a ceramic substrate; and a polymer material so as to embed the plurality of electrode pads on the ceramic substrate. Coating and forming a polymer layer and curing, exposing the surfaces of the plurality of electrode pads by surface processing, bonding a plurality of probe pins to the top of the plurality of electrode pads, including.

  In the step of joining the plurality of probe pins, the plurality of probe pins can be joined to the surfaces of the plurality of electrode pads by laser soldering.

  When the electrode pad and the probe pin are separated, the method may further include laser re-bonding with a solder layer.

  According to the present invention, by embedding the electrode pad inside the substrate, it is possible to have a stable thin film structure and to improve the adhesion between the substrate and the electrode pad.

It is a perspective view which shows the schematic structure of the semiconductor inspection apparatus by one Example. It is a top view which shows the board | substrate of the semiconductor inspection apparatus by one Example. It is a fragmentary sectional view which shows the AA 'cut surface of FIG. It is a figure for demonstrating the laser rebonding of the semiconductor inspection apparatus by one Example. It is process sectional drawing which shows the method of manufacturing the semiconductor inspection apparatus by one Example sequentially. It is process sectional drawing which shows the method of manufacturing the semiconductor inspection apparatus by one Example sequentially. It is process sectional drawing which shows the method of manufacturing the semiconductor inspection apparatus by one Example sequentially. It is process sectional drawing which shows the method of manufacturing the semiconductor inspection apparatus by another Example one by one. It is process sectional drawing which shows the method of manufacturing the semiconductor inspection apparatus by another Example one by one. It is process sectional drawing which shows the method of manufacturing the semiconductor inspection apparatus by another Example one by one. It is process sectional drawing which shows the method of manufacturing the semiconductor inspection apparatus by another Example one by one.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. However, the embodiments of the present invention can be modified in various other forms, and the scope of the present invention is not limited to the embodiments described below. In addition, the embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art. Accordingly, the shape and size of elements in the drawings may be exaggerated for a clearer description.

  FIG. 1 is a perspective view showing a schematic structure of a semiconductor inspection apparatus according to an embodiment.

  Referring to FIG. 1, the semiconductor inspection apparatus 100 includes a substrate 110 and probe pins 120. The semiconductor inspection apparatus 100 is a probe card, and probe pins 120 are bonded to a substrate 110 on which a circuit pattern 116 and electrode pads 113 are formed, and electrically connects the semiconductor wafer and the tester.

  The substrate 110 includes a plurality of electrode pads 113, and the plurality of electrode pads 113 are formed so as to be at least partially embedded in the substrate 110. The substrate 110 includes a ceramic layer made of a material such as ceramic, and may be a multilayer substrate or a double-sided substrate.

  The substrate 110 may include a ceramic substrate 111 and a polymer layer 112, the ceramic substrate 111 may be formed at the lower end as a support layer, and the polymer layer 112 may be formed on the ceramic substrate 111. At this time, a plurality of electrode pads 113 can be embedded in the polymer layer 112.

  A plurality of probe pins 120 are provided and bonded to the upper portions of the plurality of electrode pads 113, respectively. The position accuracy of the probe pin 120 is so important that the probe pin 120 comes into contact with the surface of the wafer. For example, when the probe pin 120 is slightly shifted during laser soldering, the probe pin 120 whose position is shifted is removed, and the laser soldering process is performed again. At this time, if the adhesion between the electrode pad 113 and the substrate 110 is not good, the electrode pad 113 falls off from the surface of the substrate 110. In this case, the entire substrate 110 cannot be used any more and discarded. To do. Therefore, in order to improve the adhesive force between the surface of the substrate 110 and the electrode pad 113, research on the surface treatment of the substrate and research between the electrode interfaces are actively progressing.

  The probe pin 120 is, for example, a cantilever type, includes a joint portion 121, a main body portion 122, and a contact portion 123, and can be manufactured using a fine thin plate technique applied to semiconductor manufacturing.

  The joining part 121 has a square plate shape, and one end is joined and electrically connected to the electrode pad 113 of the substrate 110, and the other end is connected to one end of the main body part 122.

  The main body part 122 has a cantilever structure, and the other end can be connected to one end of the contact part 123.

  The contact portion 123 is formed perpendicular to the other end of the main body portion 122, and the other end can be in contact with a device under test (not shown).

  Although FIG. 1 shows that the probe pin 120 is a cantilever type, it is not limited to this, and the probe pin 120 is deformed into various shapes such as being formed into a straight shape joined vertically. be able to.

  FIG. 2 is a plan view showing a substrate of a semiconductor inspection apparatus according to an embodiment.

  Referring to FIG. 2, a circuit pattern 116 and a plurality of electrode pads 113 may be formed on one surface of the substrate 110. The circuit pattern 116 can electrically connect the conductive via 114 connected to the inside of the substrate 110 and the electrode pad 113 disposed on one surface of the substrate 110.

  In addition, a plurality of probe pins 120 described later are respectively joined to the upper portions of the plurality of electrode pads 113 to be physically and electrically connected.

  Here, the electrode pad 113 can be additionally configured by making the substrate 110 made of a ceramic material or the like. The substrate 110 is formed by forming a wiring pattern 115 and a via electrode on a ceramic green sheet. It can be manufactured by firing after lamination. However, in the process in which the substrate 110 is fired, the ceramic green sheet contracts, and the position of the via electrode changes partially. For this reason, the via electrode of the substrate 110 that has been baked has low accuracy in the arrangement position.

  Therefore, a separate electrode pad 113 can be formed on one surface of the substrate 110 and the via electrode and the electrode pad 113 can be electrically connected using the circuit pattern 116.

  FIG. 3 is a partial cross-sectional view showing the AA ′ cut surface of FIG. 1.

  Referring to FIG. 3, the semiconductor inspection apparatus 100 is formed including a substrate 110 on which a plurality of electrode pads 113 are formed and a plurality of probe pins 120.

  The substrate 110 includes a plurality of electrode pads 113, and the plurality of electrode pads 113 are formed so as to be at least partially embedded in the substrate 110. Here, the plurality of electrode pads 113 are entirely embedded in the substrate 110, and the surface can be exposed. The substrate 110 includes a layer made of a material such as ceramic, and may be a multilayer substrate or a double-sided substrate. For example, the substrate 110 may have a build-up multilayer thin film structure.

  For example, the ceramic layer can be manufactured by laminating a plurality of ceramic green sheets and firing them. A large number of ceramic layers are formed on the substrate 110 using ceramic green sheets. In each ceramic layer, a wiring pattern 115 and conductive vias 114 that vertically connect the wiring patterns 115 can be formed.

  A circuit pattern 116 and a plurality of electrode pads 113 may be formed on one surface of the substrate 110. The circuit pattern 116 can electrically connect the conductive via 114 connected to the inside of the substrate 110 and the electrode pad 113 disposed on one surface of the substrate 110.

  The substrate 110 may include a ceramic substrate 111 and a polymer layer 112, the ceramic substrate 111 may be formed as a support layer, and the polymer layer 112 may be formed on the ceramic substrate 111. At this time, a plurality of electrode pads 113 can be embedded in the polymer layer 112.

  For example, the material of the polymer layer 112 can be made of polyimide. Polyimide has good heat resistance and little change in properties at high temperatures. Therefore, when this is used, it is possible to prevent the polymer layer 112 from being damaged even if heat is applied to the bonding pad in the process of bonding the probe pin 120 or the like. In addition, when polyimide is used, the thickness of the polymer layer 112 can be reduced, so that the thickness of the substrate 110 does not increase greatly.

  The electrode pad 113 can be formed of a conductive material. The electrode pad 113 can be made of, for example, Ag, Au, Pd, Pt, Rh, Cu, Ti, W, Mo, Ni, and alloys thereof, but is not limited thereto. The plurality of electrode pads 113 may be disposed at a certain distance from each other on one surface of the substrate 110. In addition, the electrode pad 113 can be formed by various methods such as plating, a circuit pattern 116 forming process of a substrate, and a screen printing method, but is not limited thereto.

  A plurality of probe pins 120, which will be described later, are joined and physically and electrically connected to the top of the plurality of electrode pads 113, respectively.

  The adhesion force between the electrode pad 113 and the surface of the substrate 110 is an important quality characteristic of a probe card space transformer.

  The electrode pad 113 is an electrode pad to which the probe pin 120 is bonded using a laser soldering method or the like. The probe pins 120 bonded in this way serve as a path for actually contacting the surface of the semiconductor wafer and exchanging electrical signals.

  A plurality of probe pins 120 are provided and bonded to the upper portions of the plurality of electrode pads 113, respectively. Since a metal bond is made between the probe pin 120 and the electrode pad 113, the bonding force between the probe pin 120 and the electrode pad 113 is usually larger than the bonding force between the electrode pad 113 and the substrate 110.

  For this reason, in the process of pressurizing the probe pin 120, the probe pin 120 may not be separated from the electrode pad 113 as intended, and the electrode pad 113 may be separated from the substrate 110 together with the probe pin 120.

  Therefore, the embedding force between the electrode pad 113 and the substrate 110 can be increased by embedding the electrode pad 113 in the substrate 110.

  A solder layer 130 for laser solder may be formed on the surface of the electrode pad 113. When the electrode pad 113 and the probe pin 120 are separated by the solder layer 130, laser re-bonding can be performed.

  As a material of the solder layer 130, for example, a solder paste such as SnPb, SnAgCu, or AuSn, conductive epoxy, or the like can be used. However, the method of bonding the probe pin 120 to the electrode pad 113 is not limited to this, and the bonding portion of the probe pin 120 may be directly bonded to the electrode pad 113 by thermocompression bonding or the like depending on the material of the electrode pad 113 and the probe pin 120. Good.

  FIG. 4 is a diagram for explaining laser rebonding of a semiconductor inspection apparatus according to an embodiment.

  Referring to FIG. 4, a plurality of electrode pads 113 are embedded in the substrate 110, and a plurality of probe pins 120 are bonded to the top of the plurality of electrode pads 113. Since a metal bond is made between the probe pin 120 and the electrode pad 113, the bonding force between the probe pin 120 and the electrode pad 113 is usually larger than the bonding force between the electrode pad 113 and the substrate 110.

  For example, the thickness of the electrode pad 113 can be increased to about 20 to 25 μm so as to be advantageous for ensuring laser conditions. When a thin film is formed on the surface of the substrate 110, the probe pin 120 is placed on the electrode pad 113 by laser soldering. At this time, when a shear force is applied to the probe pin 120 for position correction, There are cases where stress concentrates on the interface between the surface of the substrate 110 and the electrode pad 113 and the electrode pad 113 is detached from the surface of the substrate 110.

  In order to prevent this, the electrode pad 113 is embedded in the substrate 110 and the substrate 110 serves as a vertical wall surface, whereby the adhesion between the electrode pad 113 and the substrate 110 can be improved.

  That is, when the electrode pad 113 is embedded in the substrate 110 and the probe pin 120 is placed on the electrode pad 113 and then a shear force is applied for position correction, the electrode pad 113 and the surface of the substrate 110 are applied. In this structure, the probe pin 120 and the solder layer 130 are not separated from each other. In addition, since the electrode pad 113 is embedded in the substrate 110, a bonding force with the surrounding wall surface is formed in addition to a bonding force only at the bottom surface, and thus a stronger bonding force between the substrate 110 and the probe pin 120. Is formed.

  Further, when separation between the probe pin 120 and the electrode pad 113 occurs, laser rebonding can be further performed by the solder layer 130, so that the probe pin 120 and the electrode pad 113 can be easily recombined.

  Hereinafter, a method for manufacturing a semiconductor inspection apparatus according to an embodiment will be described in detail with reference to examples.

  5 to 7 are process cross-sectional views sequentially showing a method of manufacturing a semiconductor inspection apparatus according to an embodiment.

  Referring to FIGS. 5 to 7, a method of manufacturing a semiconductor inspection apparatus according to an embodiment includes a step of applying a polymer material on a ceramic substrate 111 to form a polymer layer 112 and curing the polymer layer 112, and a polymer layer 112. Forming a plurality of spaces by processing at least a part of the substrate, filling the plurality of spaces with plating to form a plurality of electrode pads 113 on the polymer layer 112, and upper portions of the plurality of electrode pads 113 Bonding the plurality of probe pins 120 to each other.

  In addition, when the electrode pad 113 and the probe pin 120 are separated, the method may further include laser re-bonding with the solder layer 130.

  According to such an embodiment, by embedding the electrode pad 113 inside the substrate 110, it is possible to have a thin film structure with a stable form and improve the adhesion between the substrate 110 and the electrode pad 113. Further, it is not necessary to increase the thickness of the plating for forming the electrode pad 113 and the thickness of the polymer layer 112.

  Hereafter, each process of one Example is demonstrated in detail with reference to FIGS.

  In the method of manufacturing a semiconductor inspection apparatus according to one embodiment, as shown in FIG. 5, first, a polymer material is applied on a ceramic substrate 111 to form a polymer layer 112, which is then cured. At this time, the ceramic substrate 111 may be sintered by laminating a plurality of ceramic layers.

  For example, the polymer material forming the polymer layer 112 may be made of polyimide. Polyimide has good heat resistance and little change in properties at high temperatures. Therefore, when this is used, it is possible to prevent the polymer layer 112 from being damaged even if heat is applied to the bonding pad in the process of bonding the probe pin 120 or the like. However, the material forming the polymer layer 112 is not limited to this.

  A plurality of space portions in which the electrode pads 113 can be formed are formed by processing at least a part of the polymer layer 112 thus formed. For example, in order to form a plurality of space portions, a plurality of space portions in which the plurality of electrode pads 113 can be embedded on the surface of the polymer layer 112 can be formed by photolithography (Photo Lithography). However, the method for forming the plurality of spaces is not limited to this.

  A plurality of electrode pads 113 are formed on the polymer layer 112 by filling the plurality of spaces with plating. The electrode pad 113 is formed of a conductive substance, and for example, Ag, Au, Pd, Pt, Rh, Cu, Ti, W, Mo, Ni, and alloys thereof can be used as a material. The electrode pad 113 can be formed not only by plating but also by a circuit pattern forming process of the substrate 110, a screen printing method, or the like.

  A wiring pattern 115, a conductive via 114, a via electrode (not shown), and the like can be formed on the plurality of ceramic layers constituting the ceramic substrate 111. In addition, a circuit pattern and at least one electrode pad 113 may be formed on one surface, that is, the upper surface of the substrate 110. Here, the electrode pad 113 can be electrically connected to the via electrode by a circuit pattern.

  Referring to FIG. 7, a plurality of probe pins 120 are joined to the top of the plurality of electrode pads 113 to physically and electrically connect the electrode pads 113 and the probe pins 120.

  When bonding a plurality of probe pins 120, as shown in FIG. 6, the plurality of probe pins 120 can be bonded to the surface of the plurality of electrode pads 113 by laser soldering (Laser Soldering).

  As a material of such a solder layer 130, for example, a solder paste such as SnPb, SnAgCu, AuSn, conductive epoxy, or the like can be used. However, the method of bonding the probe pin 120 to the electrode pad 113 is not limited to this, and the bonding portion of the probe pin 120 may be directly bonded to the electrode pad 113 by thermocompression bonding or the like depending on the material of the electrode pad 113 and the probe pin 120. Good.

  When a shear force is applied to correct the position after placing the probe pin 120 on the electrode pad 113, the probe pin 120 and the solder layer 130 are not separated from the surface of the electrode pad 113 and the substrate 110. It has a structure in which separation occurs between them. Further, since a bonding force with the surrounding wall surface is formed in addition to a bonding force only at the bottom surface, a stronger bonding force with the substrate 110 is formed.

  In addition, even when the electrode pad 113 and the probe pin 120 are separated, laser re-bonding can be performed by the solder layer 130.

  Hereinafter, a method for manufacturing a semiconductor inspection apparatus according to another embodiment will be described in detail with reference to examples.

  8 to 11 are process cross-sectional views sequentially showing a method of manufacturing a semiconductor inspection apparatus according to another embodiment.

  8 to 11, a method of manufacturing a semiconductor inspection apparatus according to another embodiment includes a step of forming a plurality of electrode pads 213 on a ceramic substrate 211 by thick plating, and a plurality of electrodes on the ceramic substrate 211. A step of applying a polymer material so as to embed the pad 213 to form and harden the polymer layer 212, a step of exposing the surface of the plurality of electrode pads 213 by surface processing, and a portion above the plurality of electrode pads 213 Joining each of the plurality of probe pins 220.

  In addition, when the electrode pad 213 and the probe pin 220 are separated, the method may further include laser re-bonding using the solder layer 230.

  According to such an embodiment, by embedding the electrode pad 213 inside the substrate 210, it has a stable thin film structure, and the adhesion between the substrate 210 and the electrode pad 213 can be improved.

  Hereinafter, each process of another Example is demonstrated in detail with reference to FIGS.

  Referring to FIG. 8, in a method of manufacturing a semiconductor inspection apparatus according to another embodiment, first, a plurality of electrode pads 213 are formed on a ceramic substrate 211 by thick plating. Since part of the electrode pad 213 plated in the subsequent steps is cut off, the electrode pad 213 is formed by thick plating.

  The ceramic substrate 211 may be formed by laminating and sintering a plurality of ceramic layers, and wiring patterns, conductive vias 214, via electrodes, and the like may be formed on the plurality of ceramic layers constituting the ceramic substrate 111. Here, the electrode pad 213 may be electrically connected to the via electrode by a circuit pattern.

  Referring to FIG. 9, a polymer material is sufficiently applied to embed a plurality of electrode pads 213 on a ceramic substrate 211 to form a polymer layer 212, which is cured.

  Referring to FIG. 10, the substrate 210 is subjected to surface processing to expose the surfaces of the plurality of electrode pads 213. For example, in the surface processing, the surface of the electrode pad 213 can be exposed by polishing the polymer layer 212 and the electrode pad 213 using semiconductor polishing equipment (CMP). However, the surface processing method is not limited to this.

  As shown in FIG. 11, a plurality of probe pins 220 are joined to the upper portions of the plurality of electrode pads 213, thereby completing the semiconductor inspection apparatus.

  Here, when the plurality of probe pins 220 are joined, the plurality of probe pins 220 can be joined to the surfaces of the plurality of electrode pads 213 by laser soldering. The solder layer 230 formed at this time can be formed by plating.

  In addition, when the electrode pad 213 and the probe pin 220 are separated, laser re-bonding can be easily performed by the solder layer 230.

  Therefore, according to the embodiment, by embedding the electrode pad inside the substrate, it has a stable thin film structure, and can improve the adhesion between the substrate and the electrode pad. Even in the case of separation, laser re-bonding can be easily performed by the solder layer.

  Although the embodiment of the present invention has been described in detail above, the scope of the right of the present invention is not limited to this, and various modifications and modifications can be made without departing from the technical idea of the present invention described in the claims. It will be apparent to those skilled in the art that variations are possible.

100 Semiconductor inspection device 110, 210 Substrate 111, 211 Ceramic substrate 112, 212 Polymer layer 113, 213 Electrode pad 120, 220 Probe pin 130, 230 Solder layer

Claims (13)

In semiconductor inspection equipment,
A substrate on which a plurality of electrode pads at least partially embedded are formed;
A plurality of probe pins respectively bonded to the top of the plurality of electrode pads;
Semiconductor inspection equipment including The substrate is
A ceramic substrate;
A polymer layer formed on the ceramic substrate;
Including
The semiconductor inspection apparatus according to claim 1, wherein the plurality of electrode pads are embedded in the polymer layer.   The semiconductor inspection apparatus according to claim 2, wherein the polymer layer is made of a polyimide material.   4. The semiconductor inspection apparatus according to claim 1, wherein the substrate has a build-up multilayer thin film structure. 5.   5. The semiconductor inspection apparatus according to claim 1, wherein a solder layer for laser solder is formed on a surface of the plurality of electrode pads. 6.   The semiconductor inspection apparatus according to claim 5, wherein when the plurality of electrode pads and the plurality of probe pins are separated, laser re-bonding is performed by the solder layer. In a method of manufacturing a semiconductor inspection apparatus,
Applying a polymer material on a ceramic substrate to form a polymer layer and curing;
Processing at least a portion of the polymer layer to form a plurality of spaces;
Filling the plurality of spaces with plating to form a plurality of electrode pads on the polymer layer; and
Bonding a plurality of probe pins respectively to the top of the plurality of electrode pads;
A method for manufacturing a semiconductor inspection apparatus including:   8. The semiconductor inspection apparatus according to claim 7, wherein the forming of the plurality of spaces includes forming the plurality of spaces by embedding the plurality of electrode pads on a surface of the polymer layer by photolithography (Photo Lithography). Production method.   The method of manufacturing a semiconductor inspection apparatus according to claim 7 or 8, wherein the step of bonding the plurality of probe pins includes bonding the plurality of probe pins to the surfaces of the plurality of electrode pads by laser soldering (Laser Soldering). .   10. The semiconductor inspection apparatus according to claim 7, further comprising a step of performing laser re-bonding with a solder layer when the plurality of electrode pads and the plurality of probe pins are separated. 11. Manufacturing method. In a method of manufacturing a semiconductor inspection apparatus,
Forming a plurality of electrode pads on the ceramic substrate by thick plating;
Applying a polymer material to embed the plurality of electrode pads on the ceramic substrate to form a polymer layer and curing the polymer layer;
Exposing the surfaces of the plurality of electrode pads by surface processing;
Bonding a plurality of probe pins respectively to the top of the plurality of electrode pads;
A method for manufacturing a semiconductor inspection apparatus including:   The method of manufacturing a semiconductor inspection apparatus according to claim 11, wherein the step of bonding the plurality of probe pins includes bonding the plurality of probe pins to the surfaces of the plurality of electrode pads by laser soldering.   13. The method of manufacturing a semiconductor inspection apparatus according to claim 11, further comprising a step of performing laser re-bonding with a solder layer when the plurality of electrode pads and the plurality of probe pins are separated from each other.

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