JP2016184623A - Semiconductor light emission device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a structure for preventing exfoliation of sealing resin from a substrate in a semiconductor light emission device sealed with resin.SOLUTION: A semiconductor light emission device includes a substrate on which a wiring pattern is formed, a light emission element mounted on the substrate, a resin layer covering the light emission element, and a heat radiation support table which is disposed just below the light emission element and radiates heat generated by the light emission element. The heat radiation support table has a base portion which is fitted in a hole provided in the substrate, and a projection portion projecting from the surface of the substrate to the light emission element side. In the projection portion, the cross-sectional area of a cross-section parallel to the surface of the substrate increases in at least a part in the height direction of the range from the surface of the substrate to the upper surface of the heat radiation support table.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a semiconductor light emitting device having a structure in which a semiconductor light emitting element is covered with a resin.

  There are various forms of semiconductor light emitting devices that are currently in practical use, such as a stem type or a so-called LED package type, all of which have a structure in which a semiconductor light emitting element mounted on a substrate is covered with a sealing resin have. The sealing resin protects the semiconductor light emitting device from the outside and functions as a light extraction medium, and has good performance such as transparency, light resistance, heat resistance, and adhesion to the substrate and the light emitting device. Is required. As the sealing resin, a silicone resin or an epoxy resin is used.

  In semiconductor light-emitting devices, it is an important issue to dissipate heat from the light-emitting element, which is a cause of deterioration of the sealing resin and the substrate. However, the sealing resin widely used at present does not have good thermal conductivity. For this reason, a device such as arranging a material having good thermal conductivity on the substrate side has been devised.

  Moreover, in the technique described in Patent Document 1, the central portion of the base body around which the frame body is fixed is a convex portion, and the light emitting element is placed on the convex portion, and the insulating member is surrounded so as to surround the convex portion. A light emitting device package having a structure in which a frame body is filled and an insulating member and a light emitting device are covered with a phosphor-containing light transmitting member has been proposed. In the technique described in Patent Document 1, by disposing an insulating member around the convex portion of the base, heat generated by the light emitting element is transmitted and diffused to the frame body through the insulating member to dissipate heat. We are trying to improve.

Japanese Patent No. 4443188

  The environment in which the semiconductor light emitting device is placed varies depending on the application, but is often mounted on a vibrating body. Vibration due to the external environment causes resin deterioration in addition to heat generation of the light emitting device itself. Further, if the resin falls off due to vibration applied to the bonding surface between the resin and the package wall surface or the substrate, this causes disconnection of the element wiring or peeling from the element mounting surface. In the conventional technique, the adhesiveness between the resin and the package wall surface is exclusively left to the properties of the resin, and no consideration is given to the enhancement of the adhesiveness against vibration.

  An object of the present invention is to provide a semiconductor light emitting device having a structure that prevents the sealing resin from peeling even when placed in an environment with vibration.

  In order to solve the above-described problems, the semiconductor light emitting device of the present invention is characterized in that a heat radiation support base having both a heat radiation function and an anchor function for a resin is disposed in a region of a substrate on which the light emitting element is placed.

  That is, the semiconductor light emitting device of the present invention is disposed immediately below the light emitting element, the substrate on which a wiring pattern is formed, the light emitting element mounted on the substrate, the resin layer covering the light emitting element, and the light emitting element. A heat dissipation support that dissipates heat generated by the element, and the heat dissipation support includes a base that fits into a hole provided in the substrate and a protrusion that protrudes from the surface of the substrate toward the light emitting element. The protrusion has an increased cross-sectional area parallel to the surface of the substrate in at least a partial range in the height direction from the surface of the substrate to the upper surface of the heat dissipation support base.

  According to the present invention, the cross-sectional area of the heat radiating support base increases upward, that is, the heat radiating support base has a shape spreading from the substrate surface toward the upper surface, so that The sealing resin that covers and fills the element has an effect of stopping the movement, that is, an anchor effect, and prevents the resin from peeling from the bottom and side surfaces of the substrate. Can be prevented.

Side sectional view of the semiconductor light emitting device of the first embodiment Top view of the semiconductor light emitting device of FIG. The figure explaining the shape of the thermal radiation support stand of the semiconductor light-emitting device of FIG. The figure which shows the manufacturing process of the semiconductor light-emitting device of FIG. The figure which shows the manufacturing process of the semiconductor light-emitting device of FIG. The side view which shows the example of a change of the manufacturing process of the semiconductor light-emitting device of FIG. FIG. 3 is a top view showing a modification of the manufacturing process of the semiconductor light emitting device of FIG. (A)-(c) is a perspective view which shows the example of the shape of a thermal radiation support stand. (A) is a sectional side view of the semiconductor light emitting device of the second embodiment, (b) is a sectional side view of the semiconductor light emitting device of the third embodiment. The figure explaining the shape of the thermal radiation support stand of 2nd embodiment The figure explaining the shape of the radiation support stand of a third embodiment Side sectional view of the semiconductor light emitting device of the fourth embodiment Side sectional view of the semiconductor light emitting device of the fifth embodiment Side sectional view of the semiconductor light emitting device of the sixth embodiment

  Hereinafter, embodiments of a semiconductor light emitting device of the present invention will be described with reference to the drawings.

<First embodiment>
This embodiment is an example in which the present invention is applied to a semiconductor light emitting device called a so-called LED package. As shown in FIG. 1, this semiconductor light emitting device basically has a package substrate (hereinafter simply referred to as a substrate) 10 having a bottom surface portion 11 and a side wall portion 12 and a center of the bottom surface portion 11 of the substrate 10. And the semiconductor light emitting element 30 fixed to the upper surface of the heat dissipation support base 20 and the mold resin 40 filled in the substrate 10. In the following description, in the semiconductor light emitting device of this embodiment, the bottom surface side of the substrate 10 is the lower side, and the mold resin 40 side is the upper side. A space surrounded by the bottom surface portion 11 and the side wall portion 12 of the substrate 10 is a space (hereinafter referred to as a mounting space) in which the light emitting element is mounted and sealed with a mold resin.

  Although the material which comprises the board | substrate 10 is not specifically limited, Ceramics, such as an alumina and aluminum nitride, the composite_body | complex of glass and ceramics, etc. can be used. A through hole 10a is formed in the center of the bottom surface portion 11 of the substrate 10 so as to penetrate from the top surface to the bottom surface, and the heat radiation support base 20 is fixed to the through hole 10a.

  The substrate 10 is manufactured, for example, by laminating ceramic sheets called green sheets. An electrode pattern is formed on the back surface, and electrodes are formed in vias formed in a direction perpendicular to the thickness direction (lamination direction). The back electrode pattern is electrically connected to the upper electrode.

  For example, when the material constituting the substrate 10 is ceramics or a ceramic composite, since the hardness after firing is extremely high, it is difficult to process through-holes, etc., but a technique of stacking and firing green sheets that are easy to process before firing By using (LTCC: Low Temperature Co-fired Ceramics), a substrate package having through holes for electrodes and through holes 10a can be manufactured.

  Although the shape of the substrate package 10 is not limited, in the present embodiment, the shape is a rectangular parallelepiped housing having an open top surface, and the shape viewed from the top surface is a quadrangle as shown in FIG.

  The heat radiating support 20 radiates heat generated by the semiconductor light emitting element 30 and has a function (anchor effect) for preventing the mold resin 40 described later from peeling from the substrate 10, in order to exhibit the former function. Further, it is made of a material having good thermal conductivity. Specifically, metals such as copper and aluminum can be used.

  The heat dissipation support 20 includes a base 21 that fits into the through hole 10a and a protrusion 22 that protrudes from the bottom surface of the substrate 10, and both are made of a single continuous material. The shape of the heat dissipation support 20 is generally a columnar shape that matches the shape of the through hole 10a, but the protrusion 22 has a region in which the area of the cross section parallel to the bottom surface of the substrate 10 increases from the bottom to the top. Have. That is, when the heat radiating support 20 is viewed from the side as shown in FIG. 1, the side surface of the projecting portion 22 has a curved cutout portion formed on the inner side and a region in which the width of the projecting portion 22 increases toward the upper side. Have. Thus, since the protrusion part 22 has the shape which the upper side expands with respect to the base part 21, the heat radiation support base 20 has an effect of preventing the mold resin 40 formed covering it from being peeled, that is, an anchor effect. Can be played.

  Further, since the side surface of the heat radiation support base 20 is recessed in a curved shape, air is prevented from being entrained when the mold resin before curing is filled in the substrate 10, and even if air bubbles are included in the resin, the air bubbles are generated. It is possible to escape from the upper surface without being retained in the recessed portion on the side surface.

  The side shape of the protrusion 22 for obtaining the above-described effect will be described in detail with reference to FIG. FIG. 3 is a sectional side view of the protrusion 22 taken along the line AA in FIG. As shown in the figure, the base 21 of the heat dissipation support 20 is a column having a width W1 that is substantially the same as the width D of the light emitting element 30. The subsequent protrusion 22 has a shape in which a curved notch 20c is formed on the lower side of the columnar body having a width W2 larger than W1, and the width on the surface of the substrate 10 coincides with the width W1 of the base 21. ing. The width W2 of the upper surface of the protrusion 22 is not particularly limited as long as W2> W1, but in order to obtain a reliable anchor effect, it is preferable that W2 ≧ 1.5 × W1. On the other hand, from the viewpoint of the position of the electrode pad on the surface of the substrate 10 to be wire-bonded to the light-emitting element 30 and workability when wire-bonding the light-emitting element 30 mounted on the heat dissipation support 20 to the substrate 10, W2 ≦ 3 × W1 is preferred. That is, the width W3 (W3 = (W2−W1) / 2) of the portion of the base portion 21 that extends laterally from the columnar body is preferably 0.125 times or more and 1 time or less of the width W1 on the surface. About 5 times is most preferable. By setting it as such a range, there is no trouble at the time of wire bonding, and the anchor effect with respect to the mold resin 40 can be given.

  On the other hand, in relation to the height of the cutout portion 20c, if the width W3 of the overhang portion is too large, even if the cutout portion 20c is curved, it is difficult for air bubbles contained in the resin to escape. Is preferably equal to or less than the height h of the notch 20c. The height h of the notch 20 c is such that the sum of the height H of the protrusion 22 and the thickness T of the light emitting element 30 is about half or less than the depth L (FIG. 1) of the mounting space of the substrate 10. Is preferred. In addition, the thickness (Hh) from the upper end of the notch part 20c of the protrusion part 22 to the upper surface of the protrusion part 22 is dependent on the processing precision at the time of producing the notch part 20c, and is not specifically limited.

In summary of the above, the preferable condition of the shape of the protruding portion 22 that satisfies all of the anchor effect, the bubble accumulation preventing effect, the wire bonding workability, and the like is as follows.
(0.125 × W1) ≦ W3 ≦ (1 × W1)
W3 ≦ h <((L / 2) −T)

  As described above, the width W1 of the base 21 is preferably equal to or larger than the width D of the light emitting element in order to obtain good heat dissipation. However, when a light emitting element having a relatively large width D is used, the width W1. May be made smaller than the width D of the light emitting element to satisfy the above-described formula.

  The light-emitting element 30 is a semiconductor element that emits light in a predetermined wavelength range according to the use of the semiconductor light-emitting device, and is fixed to the upper surface of the heat dissipation support 20 having the above-described shape via a heat-resistant adhesive. The The light emitted from the light emitting element 30 is not particularly limited, and includes, for example, deep ultraviolet light having an emission wavelength of about 200 to 350 nm and ultraviolet to visible light having a wavelength of 350 nm or more used for sterilization and sterilization. The light emitting device of the present embodiment uses light emitted from the light emitting element 30 by a phosphor contained in a mold resin, for example, in addition to the light emitted from the light emitting element 30 as light emitted from the light emitting device. Also included.

  Further, the light emitting element 30 has various forms such as a face-up type and a flip chip type in which two electrode portions are formed on the upper surface, and a light emitting element with a submount substrate on which an electrode is formed on the back surface and mounted on the submount substrate. However, in the present embodiment, various types can be used as long as they have a structure that can be electrically connected to the electrode formed on the bottom surface of the substrate 10. In FIG. 1, a face-up type light emitting element 30 is illustrated. The light-emitting element 30 with a submount substrate is a light-emitting element in which the light-emitting element 30 is mounted on a submount substrate having an electrode pattern formed on its surface with a conductive bonding material such as a gold bump, and is formed on the submount substrate. The electrode and the electrode formed on the bottom surface of the substrate package 10 are connected by a bonding wire 50.

  The mold resin 40 is made of a material having high translucency such as silicone resin and epoxy resin and heat resistance. Further, as described above, a material that converts the wavelength of light from the light emitting element 30, for example, a phosphor may be included. The phosphor is appropriately selected according to the wavelength of the light emitted from the light emitting element 30 and the light required for the semiconductor light emitting device, and a known phosphor such as a YAG system or a SiAlON system can be used. The phosphor is usually added to the mold resin 40 in the form of particles, but is not limited thereto.

  As mentioned above, although each element which comprises the semiconductor light-emitting device (LED package) of this embodiment was demonstrated, in addition to the element mentioned above, the semiconductor light-emitting device of this embodiment adds an attached component and member according to a use. However, they are the same as known LED packages, and the description thereof is omitted here.

  Next, an example of a method for manufacturing the semiconductor light emitting device of the present embodiment will be described with reference to process explanatory diagrams shown in FIGS.

  First, the package substrate 10 is produced. For example, although not shown, the substrate is manufactured by laminating and baking a plurality of green sheets. At this time, electrode vias and holes for through holes are formed in the green sheet constituting the bottom portion of the substrate package. The through hole is designed so that the through hole formed after firing has the same shape / size as the base portion 21 of the heat dissipation support base 20. Further, a conductive pattern 110 for extracting an electrode is formed on the green sheet using a metal such as copper, silver, or tungsten. At this time, a silver brazing conductor pattern 110 for fixing the heat radiation support base to the through hole is formed in or around the through hole. For the side wall portion of the substrate package, a green sheet having only a frame in which a portion corresponding to the space filled with the mold resin is opened is used.

  A green sheet having a hole and a conductor pattern and a green sheet having only a frame are stacked and fired at a high temperature around 900 ° C. to produce a ceramic substrate. Next, gold plating 120 is applied to the conductor patterns for electrode extraction and silver brazing to complete the package substrate 10 (FIG. 4: S401).

  Separately from the package substrate 10, the heat dissipation support 20 is produced (S402). The heat radiating support base can be manufactured by a known method such as cutting, casting, or forging using a metal such as copper or aluminum, and has the shape and size described with reference to FIG.

  After the silver brazing material 130 is arranged on the gold-plated silver brazing conductor pattern of the package substrate 10 created in step S401, the heat radiation support base produced in step S402 is fitted into the through hole 10a, and the silver brazing is heated and melted. Then, the heat radiation support base 20 is fixed to the substrate 10 (S403). The details of the heat radiation support base fixing part 150 composed of the conductor pattern 110, the gold plating 120 and the silver brazing material 130 described above are shown as a partially enlarged view in FIG.

  Thereafter, as shown in FIG. 5, after fixing the light emitting element 30, here the face-up element, with a silicone adhesive (die attach agent) or the like on the upper surface of the protruding portion 22 of the heat radiation support base 20, The surface electrode is electrically connected to the power supply pad of the substrate 10 by the bonding wire 50 (S404). Finally, a resin before curing is injected into the space surrounded by the side wall of the substrate 10 to cover the light emitting element 30 and the bonding wire 50, and then the resin is cured by heating or UV irradiation (S405). The LED package shown in FIG. 1 is manufactured through the above steps.

  In the manufacturing method described above, the case where the electrical connection between the light emitting element 30 and the substrate 10 is performed by wire bonding is shown. However, when the light emitting element 30 is a flip chip type, it is called a bump arranged in an array. You may connect by a projecting terminal. In the case of a light-emitting element mounted on a submount substrate whose back surface is metallized with gold or the like, bonding by Au—Sn eutectic is also possible.

  In the manufacturing method described above, a case where a single LED package is manufactured has been shown, but a plurality of LED packages are manufactured using a green sheet having a size in which the illustrated substrate is arranged in one or two directions along the bottom surface. It is also possible to do. When a plurality of LED packages are formed, it is possible to manufacture an LED package having a desired size by dividing a plurality of arranged substrates.

  4 shows a case where silver brazing is performed in the through hole formed in the substrate 10 in order to fix the heat radiation support base, but silver brazing may be performed around the through hole 10a. In that case, in the step of forming a conductor pattern on the green sheet, as shown in FIGS. 6 and 7, a conductor pattern 110 is formed around the through hole 10a, and the conductor pattern is also plated with gold 120 after the green sheet is fired. (S501, S502). In the mounting step of the heat dissipation support, after the silver brazing material 130 is disposed on the gold-plated portion around the through hole 10a, the heat dissipation support is attached to the through hole 10a and the silver solder is heated and melted (S503). The details of the heat radiation support base fixing part 150 composed of the conductor pattern 110, the gold plating 120 and the silver brazing material 130 described above are shown as a partially enlarged view in FIG. In FIG. 6, silver brazing around the through hole 10 a is performed on the upper surface side of the substrate 10, but it may be performed on the lower surface side or on both surfaces side. When foil is used as the silver brazing, it is difficult to dispose silver brazing in the through hole, but silver brazing can be easily performed by adopting this method. In the case of this manufacturing method, a structure in which a protrusion is provided on the heat dissipation support base and the heat dissipation support base fixing part 150 is sandwiched between the protrusion and the substrate 10 is preferable.

  The manufacturing example of the semiconductor light emitting device of the present embodiment has been described above with reference to FIGS. 4 to 7. However, the method of manufacturing the semiconductor light emitting device of the present embodiment is not limited to the illustrated one. In addition, the materials and numerical values exemplified in the above manufacturing method are merely examples, and do not limit the present embodiment. Moreover, although the case where the shape of the package substrate was a rectangular parallelepiped was illustrated as the shape of the semiconductor light emitting device, it may be a cylindrical columnar body other than a cylinder or a rectangle.

  Various modifications can be similarly made on the heat radiation support base 20. FIG. 8 shows a modification. 8A and 8B, the shape of the upper surface is a quadrangle, but the heat radiation support base 20 of FIG. 8A has a curved notch formed on all four side surfaces, and FIG. A curved notch is formed on only one side. Further, (c) is a heat radiation support base 20 whose top and bottom shapes are circular. In addition, the shape of the upper surface of the heat radiation support base 20 can be appropriately formed in a polygonal shape or a star shape.

  According to the present embodiment, the heat radiation support base for fixing the semiconductor light emitting element is protruded from the substrate surface, and the curved cutout portion is provided so that the diameter is reduced on the substrate side, so that bubbles are accumulated when the resin is filled. In addition, an anchor effect can be given to the cured mold resin, and the mold resin can be prevented from peeling from the package substrate. As a result, the semiconductor light emitting device can be driven stably.

<Second embodiment>
Also in the semiconductor light emitting device of this embodiment, the heat radiation support base for fixing the semiconductor light emitting element is provided in the center of the substrate, and the heat radiation support base has a convex portion protruding from the substrate, as in the first embodiment. It is. However, the semiconductor light emitting device of this embodiment is different from the first embodiment in the shape of the convex portion of the heat dissipation support base.

  Hereinafter, the semiconductor light emitting device of this embodiment will be described with reference to FIG. 9A and FIG. 10. In FIG. 9A and FIG. 10, the same elements as those in FIG. Omitted.

  As shown in FIG. 9A, the heat dissipation support 20 of this embodiment has a base portion 21 that fits into the through hole 10 a of the substrate 10 and a protruding portion 22 that protrudes from the surface of the substrate 10. The protrusion 22 has a tapered side surface (inclined surface), and the width thereof is the smallest at the position of the surface of the substrate 10 and the largest at the upper surface to which the semiconductor element 30 is fixed. Such a heat radiation support base 20 also has an effect of preventing bubble accumulation and an anchor effect on the resin, similarly to the heat radiation support base provided with the curved notch portion of the first embodiment. Hereinafter, a suitable shape for obtaining these effects will be described with reference to FIG.

  When the width of the heat radiation support base 20 on the substrate surface is W1, the width of the upper surface is W2, and the height of the protrusion 22 is h2, the width W1 is the width of the bottom surface of the light emitting element 30 in terms of heat radiation characteristics. It is preferable that it is comparable to D (FIG. 3). The height h2 of the convex portion 20 is such that the light emitting element 30 and the bonding wire 50 are surely sealed with the mold resin, so that the sum of the thickness of the light emitting element is the height of the substrate side wall, that is, the mounting space of the package substrate 10. It is preferably about half of the height L (FIG. 1).

  Next, when ½ of the difference (W2−W1) between the width W1 on the substrate surface and the width W2 on the upper surface of the heat radiation support base 20 (the width of the protruding portion) is W3, the height h2 of the protrusion 22 The smaller the inclination angle θ of the convex inclined surface determined by the overhang width W3, the higher the anchor effect, and the higher the inclination angle θ, the higher the effect of preventing bubble accumulation. Specifically, θ is preferably 40 degrees or greater and 70 degrees or less, and more preferably 45 degrees or greater and 60 degrees or less. Therefore, when designing the heat radiation support base 20, if the height h2 of the protrusion 22 is determined from the height L of the mounting space of the substrate 10 and the width W1 of the base 21 is determined, the inclination angle θ of the convex inclined surface can be determined. What is necessary is just to determine the width W2 of the upper surface so that it may become an appropriate range. As with the first embodiment, the width W2 of the upper surface is limited in consideration of the position of the electrode pad of the substrate 10 and workability at the time of wire bonding.

  The semiconductor light-emitting device of this embodiment can also use the same material for the heat dissipation support 20 and other elements, and can be manufactured by the same method as the semiconductor light-emitting device of the first embodiment. In the present embodiment and the following embodiments, the structure and position of the heat radiation support base fixing portion provided in or around the through hole 10a of the substrate 10 are not shown, but the semiconductor light emitting device of the first embodiment is omitted. It is the same.

<Third embodiment>
In the semiconductor light emitting device of the second embodiment, the diameters of the through hole 10a of the substrate 10 and the base portion 21 of the heat dissipation support base 20 are constant. It is different from the second embodiment in that it is tapered (uniformly inclined surface). Other configurations are the same as those of the second embodiment, and different points will be described below.

  In the semiconductor light emitting device of this embodiment, as shown in FIGS. 9B and 11, a tapered through-hole 10 a whose diameter (width) decreases downward is formed in the center of the substrate 10. The heat radiation support base 20 whose side surface is an inclined surface is attached to the tapered through hole 10a. As in the first and second embodiments, the light emitting element 30 is fixed to the upper surface of the heat dissipation support 20, wire-bonded to the substrate 10, and then sealed with the mold resin 40.

  The angle Θ of the inclined surface of the heat dissipation support 20 of the present embodiment is the same as the angle θ of the heat dissipation support 20 (projecting portion 22) of the second embodiment from the surface of the bottom surface of the substrate 10. Is determined by the relationship between the height h2 from the heat radiation support base to the upper surface of the heat dissipation support and 1/2 of the difference (W2-W) between the width W of the substrate surface and the width W2 of the upper surface (W3 = (W2-W) / 2). . In order to enhance the anchor effect of the heat radiation support base 20, it is better that the inclination angle Θ is small, and in order to reliably prevent bubble accumulation, it can be said that the inclination angle Θ should be large to some extent. However, in this embodiment, since the inclined surface continues to the lower surface of the heat radiation support base 20, when the inclination angle becomes smaller, the width W1 of the lower surface of the heat radiation support base 20 is smaller than the width W2 of the upper surface of the heat radiation support base 20. That is, the area of the lower surface is reduced and the heat dissipation effect is reduced. Therefore, when designing the heat dissipation support 20 of this embodiment, the height of the heat dissipation support 20 is determined from the thickness of the bottom surface 11 of the substrate 10 and the height h2 of the protrusion 22 of the heat dissipation support 20 protruding from the substrate 10. After the determination, the volume of the heat dissipation support 20 or the width W1 of the lower surface that can ensure the heat dissipation effect is determined, and the inclination angle Θ in a range where the anchor effect and the bubble accumulation preventing effect can be obtained.

  The manufacturing method of the semiconductor light emitting device of the present embodiment is also substantially the same as the manufacturing method of the first or second embodiment. However, in the present embodiment, when the package substrate 10 is manufactured, for example, a green sheet as a material The size of the through-hole for drilling is designed to increase from the bottom to the top, and after laminating and firing, a substrate having a tapered through-hole 10a is obtained. In addition, as the heat radiation support base, for example, a quadrangular pyramid part is prepared in accordance with the shape of the through hole 10a. The heat radiation support base is fixed to the through hole 10a by silver brazing and the subsequent steps are the same as in the first embodiment.

<Fourth embodiment>
In the first to third embodiments, the embodiment in which the present invention is applied to an LED package type light emitting device has been described. Hereinafter, the present invention is applied to an LED chip type light emitting device having a flat substrate and no side wall portion. An embodiment will be described.

  As shown in FIG. 12, the light emitting device of the fourth embodiment is obtained by sealing a substrate on which a light emitting element is mounted by transfer molding (molding) with a resin, a substrate 10 on which a conductor pattern 110 is formed, and a substrate 10, a heat dissipation support 20 fixed to the through hole 10 a, a semiconductor light emitting element 30 fixed on the heat dissipation support 20, and a bonding wire 50 that electrically connects the light emitting element 30 and the conductor pattern on the substrate 10. And a mold resin 40 covering the upper surface of the substrate including the heat radiation support base 20, the light emitting element 30, and the bonding wires 50.

  Each member constituting the light emitting device of this embodiment is the same as that of the first embodiment except that the substrate 10 has a flat plate shape, and the description thereof is omitted. Since the substrate 10 does not have a side wall portion and a space formed thereby, the mold resin 40 is provided on the substrate 10 by transfer molding using a mold.

  Also in the light emitting device of the present embodiment, the heat radiation support base 20 includes a base portion 21 and a protruding portion 22, and the base portion 21 is fixed to a through hole 10 a formed in the substrate 10 with silver solder or the like. As in the first embodiment, the protruding portion 22 that is a portion protruding from the upper surface of the substrate has a width on the upper surface of the substrate that changes upward in the height direction, and is an upper surface (element mounting surface) on which the light emitting element 30 is mounted. The widest. That is, when viewed as the columnar protrusion 22, a curved notch 20 c is provided on the side surface. As in the first embodiment, this shape gives an anchor effect to the resin that seals the upper surface of the substrate 10 and prevents the resin 40 from being peeled off from the substrate 10.

  The relationship between the width (W1) of the heat radiation support base 20 on the upper surface of the substrate and the width (W2) of the element mounting surface and the shape of the notch 11c can be designed in the same manner as in the first embodiment.

  The light emitting device of this embodiment can be manufactured in the same process as the light emitting device of the first to third embodiments except for the resin sealing step, and the fixing of the heat dissipation support 20 to the substrate 10 is also performed through. Either a method of fixing the hole 10a by silver brazing or plating or a method of brazing silver on the upper surface of the substrate may be adopted.

<Fifth and sixth embodiments>
In the light emitting devices of the fifth embodiment and the sixth embodiment, the shape of the heat dissipation support base 20 of the fourth embodiment is changed to the shape of the heat dissipation support base 20 of the light emitting device of the second embodiment and the third embodiment, respectively. Except for the above, the fourth embodiment is the same as the fourth embodiment. That is, in the light emitting device of the fifth embodiment, as shown in FIG. 13, the heat radiation support base 20 has a base 21 with a constant width, and the side surface of the protruding portion 22 above the upper surface of the substrate 10 is inclined. Yes. In the light emitting device of the sixth embodiment, as shown in FIG. 14, the side surface from the bottom surface to the upper surface (element mounting surface) of the heat radiation support base 20 is an inclined surface. Other configurations are the same as those of the fourth embodiment.

  Further, the inclination angle of the inclined surface of the heat radiation support base 20 in these embodiments and the relationship between the width of the bottom surface or the top surface of the substrate and the width of the element mounting surface are shown in FIG. 10 for the light emitting devices of the second embodiment and the third embodiment. The relationship is the same as that described with reference to FIG.

  Also in these embodiments, as in the other embodiments, the shape of the heat radiation support base 20 can prevent the resin from being peeled after the resin is cured while preventing the air bubbles from being accumulated at the time of molding resin sealing. Also, a high heat dissipation effect is achieved.

  According to the present invention, it is possible to prevent the semiconductor light emitting device from deteriorating due to the external environment and to enable stable operation.

DESCRIPTION OF SYMBOLS 10,100 ... Board | substrate, 10a ... Through-hole, 11 ... Bottom face part, 12 ... Side wall part, 20 ... Radiation support base, 20C ... Notch part, 21 ... Base part, 22 ... convex part, 30 ... light emitting element, 40 ... mold resin, 50 ... bonding wire, 110 ... conductor pattern, 120 ... gold plating, 130 ... silver brazing material, 150 ... Heat dissipation support fixing part.

Claims (7)

  A substrate on which a wiring pattern is formed, a light emitting element mounted on the substrate, a resin layer covering the light emitting element, and a heat dissipation support base that is disposed immediately below the light emitting element and dissipates heat generated by the light emitting element. The heat radiation support base has a base portion that fits into a hole provided in the substrate, and a protrusion portion that protrudes from the surface of the substrate toward the light emitting element, and the protrusion portion is a surface of the substrate. A cross-sectional area of a cross section parallel to the surface of the substrate is increased in at least a partial range in the height direction from the upper surface to the upper surface of the heat radiation support base. The semiconductor light emitting device according to claim 1,
2. The semiconductor light emitting device according to claim 1, wherein the heat radiation support base has a curved notch at least at a part of a side surface. The semiconductor light emitting device according to claim 1,
In the semiconductor light emitting device, at least a part of a side surface of the heat dissipation support base is an inclined surface. The semiconductor light emitting device according to claim 1,
The semiconductor heat-emitting device, wherein the heat radiation support base penetrates the substrate and is integrated with the substrate. The semiconductor light emitting device according to claim 1,
The semiconductor light emitting device according to claim 1, wherein the heat dissipation support has a cross sectional area equal to or larger than a bottom area of the element. A semiconductor light emitting device according to any one of claims 1 to 5,
The substrate has a bottom surface portion and a side wall portion, and the light emitting element is mounted and the resin layer is formed in a space surrounded by the bottom surface portion and the side wall portion. A semiconductor light emitting device according to any one of claims 1 to 5,
The semiconductor light-emitting device, wherein the substrate has a flat plate shape.

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