JP2016164120A5 - - Google Patents
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- Publication number
- JP2016164120A5 JP2016164120A5 JP2016050574A JP2016050574A JP2016164120A5 JP 2016164120 A5 JP2016164120 A5 JP 2016164120A5 JP 2016050574 A JP2016050574 A JP 2016050574A JP 2016050574 A JP2016050574 A JP 2016050574A JP 2016164120 A5 JP2016164120 A5 JP 2016164120A5
- Authority
- JP
- Japan
- Prior art keywords
- less
- dislocation density
- single crystal
- silicon carbide
- crystal wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 14
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 14
- 238000001069 Raman spectroscopy Methods 0.000 claims description 5
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016050574A JP6200018B2 (ja) | 2016-03-15 | 2016-03-15 | 炭化珪素単結晶ウェハ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016050574A JP6200018B2 (ja) | 2016-03-15 | 2016-03-15 | 炭化珪素単結晶ウェハ |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2013195010A Division JP5931825B2 (ja) | 2013-09-20 | 2013-09-20 | 炭化珪素単結晶インゴットの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2016164120A JP2016164120A (ja) | 2016-09-08 |
| JP2016164120A5 true JP2016164120A5 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) | 2016-10-20 |
| JP6200018B2 JP6200018B2 (ja) | 2017-09-20 |
Family
ID=56876408
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016050574A Active JP6200018B2 (ja) | 2016-03-15 | 2016-03-15 | 炭化珪素単結晶ウェハ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6200018B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111788339B (zh) | 2018-03-01 | 2022-08-09 | 住友电气工业株式会社 | 碳化硅基板 |
| CN110747504B (zh) * | 2019-11-26 | 2021-03-23 | 中国科学院物理研究所 | 一种碳化硅单晶的生长方法 |
| KR102195325B1 (ko) | 2020-06-16 | 2020-12-24 | 에스케이씨 주식회사 | 탄화규소 잉곳, 웨이퍼 및 이의 제조방법 |
| CN113322520A (zh) * | 2020-02-28 | 2021-08-31 | Skc株式会社 | 晶片及其制造方法 |
| CN114540954B (zh) * | 2020-11-25 | 2022-12-09 | 北京天科合达半导体股份有限公司 | 碳化硅单晶片、晶体及制备方法、半导体器件 |
| WO2023054264A1 (ja) | 2021-09-30 | 2023-04-06 | セントラル硝子株式会社 | 炭化ケイ素単結晶ウエハ及び炭化ケイ素単結晶インゴット |
| EP4411029A1 (en) | 2021-09-30 | 2024-08-07 | Central Glass Company, Limited | Single-crystal silicon carbide wafer, single-crystal silicon carbide ingot, and single-crystal silicon carbide production method |
| JPWO2024080071A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * | 2022-10-11 | 2024-04-18 | ||
| CN116334748B (zh) * | 2023-03-21 | 2024-12-10 | 浙江材孜科技有限公司 | 一种降低碳化硅晶体应力的生长方法 |
| WO2025121062A1 (ja) * | 2023-12-08 | 2025-06-12 | 住友電気工業株式会社 | 炭化珪素基板、エピタキシャル基板および半導体装置の製造方法 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5304712B2 (ja) * | 2010-04-07 | 2013-10-02 | 新日鐵住金株式会社 | 炭化珪素単結晶ウェハ |
| WO2013031856A1 (ja) * | 2011-08-29 | 2013-03-07 | 新日鐵住金株式会社 | 炭化珪素単結晶基板及びその製造方法 |
| JP5614387B2 (ja) * | 2011-08-29 | 2014-10-29 | 新日鐵住金株式会社 | 炭化珪素単結晶の製造方法、及び炭化珪素単結晶インゴット |
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2016
- 2016-03-15 JP JP2016050574A patent/JP6200018B2/ja active Active