JP2016163915A - Semiconductor device, electronic apparatus, and movable body - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, an electronic apparatus and a movable body in which generation of cracks and crystal defect can be reduced and excellent reliability can be exerted.SOLUTION: A semiconductor device 1 includes a recess 24 having an opening part 240 opening in a main face of a semiconductor substrate 21, and a semiconductor circuit 6 arranged on the semiconductor substrate 21. In a plan view of the semiconductor substrate 21, an outline of the opening part 240 has a bent part 245 bending with an obtuse angle. Especially, the outline of the opening part 240 forms a quadrangle shape having the bent part 245 in each corner part.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a semiconductor device, an electronic apparatus, and a moving object.

  For example, the MEMS vibrator of Patent Document 1 has a configuration in which a recess is provided on the upper surface of a silicon substrate, a vibration element is disposed in the recess, and a circuit electrically connected to the functional element is formed around the recess. ing. Thus, by providing a recess in the silicon substrate and disposing the vibration element in the recess, the height of the MEMS vibrator can be reduced. Here, Patent Document 1 does not describe anything about the contour shape of the opening of the concave portion. However, if the contour shape has a corner bent at an angle of 90 ° or less (for example, the contour shape is a square shape). In this case, the corner may be a starting point for cracks and crystal defects. In particular, when a crystal defect occurs and the crystal defect reaches the circuit, the circuit element (particularly, the transistor) is damaged, and the circuit may not function normally.

US Pat. No. 5,798,283

  An object of the present invention is to provide a semiconductor device, an electronic apparatus, and a moving body that can reduce the occurrence of cracks and crystal defects and exhibit excellent reliability.

  SUMMARY An advantage of some aspects of the invention is to solve at least a part of the problems described above, and the invention can be implemented as the following application examples.

[Application Example 1]
The semiconductor device of this application example includes a substrate,
A recess having an opening opening in the main surface of the substrate;
A circuit disposed on the substrate,
In the plan view of the substrate, the outline of the opening includes at least one of a bent part bent at an obtuse angle and a curved part bent.

  Thereby, the semiconductor device which can reduce generation | occurrence | production of a crack and a crystal defect, and can exhibit the outstanding reliability is obtained.

[Application Example 2]
In the semiconductor device of this application example, the substrate is preferably a crystalline substrate.
Thereby, generation | occurrence | production of a crystal defect can be reduced.

[Application Example 3]
In the semiconductor device of this application example, it is preferable that at least one of the bent portion and the curved portion is located between a center portion of the concave portion and the circuit.
Thereby, the generation of cracks and crystal defects in the vicinity of the circuit can be reduced.

[Application Example 4]
In the semiconductor device according to this application example, it is preferable that the outline of the opening includes a corner having the bent portion or the curved portion.

  Thereby, for example, the occupied area of the opening can be reduced as compared with a circular case.

[Application Example 5]
In the semiconductor device of this application example, it is preferable to have a lid that covers the opening of the recess.

  As a result, a space surrounded by the recess and the lid can be formed, and the elements disposed in this space can be protected.

[Application Example 6]
In the semiconductor device of this application example, it is preferable to have a functional element arranged at the bottom of the recess.

  Thereby, the height reduction of the semiconductor device can be achieved. In addition, the semiconductor device can exhibit a predetermined function.

[Application Example 7]
In the semiconductor device of this application example, it is preferable that the functional element is a vibration element.
Thereby, a semiconductor device can be used as an oscillator, for example.

[Application Example 8]
In the semiconductor device of this application example, the functional element is preferably a pressure sensor element.
Thereby, a semiconductor device can be used as a pressure sensor.

[Application Example 9]
An electronic apparatus according to this application example includes the semiconductor device according to the application example described above.
As a result, a highly reliable electronic device can be obtained.

[Application Example 10]
The moving body of this application example includes the semiconductor device of the above application example.
Thereby, a mobile body with high reliability is obtained.

1 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present invention. It is a top view of the recessed part which the semiconductor device shown in FIG. 1 has. FIG. 3 is an enlarged plan view of a bent portion shown in FIG. 2. It is a schematic diagram which shows the positional relationship of a recessed part and a circuit. It is a top view which shows the recessed part which the semiconductor device which concerns on 2nd Embodiment of this invention has. It is a top view which shows the recessed part which the semiconductor device which concerns on 3rd Embodiment of this invention has. It is a top view which shows the recessed part which the semiconductor device which concerns on 4th Embodiment of this invention has. It is sectional drawing which shows the semiconductor device which concerns on 5th Embodiment of this invention. It is a top view which shows the pressure sensor element which the semiconductor device shown in FIG. 8 has. It is a figure which shows the bridge circuit containing the pressure sensor element shown in FIG. 1 is a perspective view illustrating a configuration of a mobile (or notebook) personal computer including a semiconductor device of the present invention. It is a perspective view which shows the structure of a mobile telephone (PHS is also included) provided with the semiconductor device of this invention. It is a perspective view which shows the structure of a digital still camera provided with the semiconductor device of this invention. It is a perspective view which shows a mobile body provided with the semiconductor device of this invention.

  Hereinafter, a semiconductor device, an electronic apparatus, and a moving body of the present invention will be described in detail based on embodiments shown in the accompanying drawings.

<First Embodiment>
FIG. 1 is a sectional view showing a semiconductor device according to the first embodiment of the present invention. FIG. 2 is a plan view of a recess of the semiconductor device shown in FIG. FIG. 3 is an enlarged plan view of the bent portion shown in FIG. FIG. 4 is a schematic diagram showing the positional relationship between the recess and the circuit. 1 is a cross-sectional view taken along line AA in FIG. Moreover, in FIG. 2, FIG. 3, and FIG. 4, the illustration of the lid portion is omitted. In the following description, for convenience of explanation, the upper side in FIG. 1 is also referred to as “upper” and the lower side is also referred to as “lower”.

  A semiconductor device 1 shown in FIG. 1 is used as an oscillator that oscillates a signal having a predetermined frequency. As shown in FIG. 1, such a semiconductor device 1 includes a base substrate 2, a vibration element 3 as a functional element, a lid 4, a cavity (accommodating space) 5, and a semiconductor circuit (circuit) 6. ,have.

The base substrate 2 includes a semiconductor substrate (substrate) 21 having a recess 24 opened on the upper surface, a first insulating film 22 stacked on the inner surface of the recess 24, and a second insulation stacked on the first insulating film 22. And a film 23. The semiconductor substrate 21 is made of, for example, a silicon substrate that is a crystal substrate, the first insulating film 22 is made of, for example, a silicon oxide film (SiO ₂ film), and the second insulating film 23 is made of, for example, a silicon nitride film (SiN film). For example, a silicon substrate obtained by epitaxially growing a silicon single crystal on a silicon single crystal substrate may be used. However, the semiconductor substrate 21 is not limited to a silicon substrate, and for example, an SOI substrate can be used. Further, the first insulating film 22 and the second insulating film 23 are not particularly limited as long as the semiconductor substrate 21 can be protected at the time of manufacturing and a short circuit of each part can be prevented.

  In addition, the semiconductor circuit 6 is formed in a portion outside the recess 24 of the semiconductor substrate 21. The semiconductor circuit 6 includes, for example, an oscillation circuit for exciting the vibration element 3. In addition, for example, an output frequency from the phase synchronization circuit (PLL circuit) or the oscillation circuit is multiplied by an integer as necessary. A multiplication circuit (frequency adjustment circuit), an output circuit that converts a signal into a predetermined output format, and a memory. Such a semiconductor circuit 6 includes circuit elements such as a MOS transistor, a capacitor, an inductor, a resistor, a diode, and a wiring as necessary.

  Thus, by making the semiconductor circuit 6 in the semiconductor device 1, for example, the overall size of the apparatus can be reduced as compared with the case where the semiconductor device 1 and the semiconductor circuit 6 are separate. . In addition, since the semiconductor circuit 6 can be disposed close to the vibration element 3, it is difficult for noise to be applied to the signal output from the vibration element 3, and the semiconductor device 1 with high oscillation accuracy is obtained. In FIG. 1, only the MOS transistor 61 is illustrated as the semiconductor circuit 6 for convenience of explanation.

  As shown in FIGS. 1 and 2, a wall portion 71 and four columnar portions 72 (72 a to 72 d) having a columnar shape are provided in the recess 24.

  The four column portions 72 are provided inside the wall portion 71 (that is, inside the cavity portion 5), and are provided apart from each other along the periphery of the vibration element 3 in a plan view. These four pillar portions 72 support the lid portion 4, and hence bending deformation of the lid portion 4 below (inside the cavity portion 5) is reduced. Therefore, contact between the lid 4 and the vibration element 3 can be prevented.

  The four pillars 72 are used as a part of wiring (electrical path) for drawing out the electrode of the vibration element 3 to the outside. As described above, by using the column portion 72 as a part of the wiring, it is not necessary to separately route the wiring, the device configuration of the semiconductor device 1 is simplified, and the semiconductor device 1 can be downsized. . Such a column part 72 is made of, for example, polysilicon doped (diffused or implanted) with an impurity such as phosphorus or boron. Note that the number of column portions 72 is not limited to four.

  The wall portion 71 has a frame shape and is erected on the bottom surface of the concave portion 24 so as to surround the periphery of the vibration element 3 and the column portion 72 in plan view. The inside of the wall portion 71 is a hollow portion 5. The wall portion 71 includes a protruding portion 711 protruding inward so as to enter between the adjacent column portions 72a and 72b, and a protruding portion 712 protruding inward so as to enter between the adjacent column portions 72b and 72c. A protrusion 713 that protrudes inward so as to enter between the adjacent pillars 72c and 72d, and a protrusion 714 that protrudes inward so as to enter between the adjacent pillars 72d and 72a. .

  By providing such protrusions 711, 712, 713, and 714, the volume of the cavity 5 can be reduced. Therefore, the etching time for forming the cavity 5 can be shortened, or the evacuation time for vacuum-sealing the cavity 5 can be shortened. These four projecting portions 711 to 714 support the lid portion 4 together with the column portion 72. Therefore, the downward deformation of the lid 4 is further reduced.

Such a wall portion 71 is made of, for example, polysilicon. In addition, a reinforcing portion 73 that reinforces the wall portion 71 is provided on the outer peripheral side of the wall portion 71 (between the wall portion 71 and the inner surface of the recess 24). Thereby, the mechanical strength of the semiconductor device 1 can be increased. Such a reinforcing portion 73 is made of, for example, silicon dioxide (SiO ₂ ).

  The lid 4 is provided on the upper surface side of the base substrate 2 and closes the opening of the recess 24. As a result, a hermetically sealed cavity 5 is formed between the base substrate 2 and the lid 4. The vibration element 3 is disposed in the hollow portion 5, whereby the vibration element 3 can be protected and the vibration element 3 can be driven in a predetermined environment (a stable environment).

  As shown in FIG. 1, the lid 4 includes a covering layer 41, a sealing layer 42 stacked on the covering layer 41, and a structure 43 stacked on the sealing layer 42 and the base substrate 2. And have.

  The covering layer 41 includes an insulating layer 411 and a conductive layer 412 stacked on the insulating layer 411. Further, the coating layer 41 has a plurality of communication holes 41 a that communicate between the inside and the outside of the cavity 5. The communication hole 41a is a release hole for removing the sacrificial layer in the cavity 5 by etching during manufacturing. The communication hole 41a is preferably arranged so as not to overlap with the vibration part electrode 31 in a plan view of the base substrate 2. Thereby, when sealing the communication hole 41a with the sealing layer 42, it can reduce that the sealing material which passed through the communication hole 41a adheres to the vibration part electrode 31, and the drive frequency ( (Resonance frequency) can be reduced.

  In addition, the conductive layer 412 has a contact portion 412 a that is provided through the insulating layer 411 and is electrically connected to the column portion 72. Such a contact portion 412 a is used as a part of wiring for connecting the vibration portion electrode 31 to the semiconductor circuit 6, similarly to the column portion 72.

  In such a covering layer 41, the insulating layer 411 is made of, for example, silicon nitride (SiN), and the conductive layer 412 is made of, for example, polysilicon doped (diffused or implanted) with impurities such as phosphorus and boron. It is configured.

  The sealing layer 42 is laminated on the covering layer 41 and closes the communication hole 41a. Thereby, the cavity 5 is hermetically sealed. Thus, by sealing the cavity 5 in an airtight manner, the atmosphere of the vibration element 3 accommodated in the cavity 5 can be stabilized. The cavity 5 is preferably in a vacuum state (depressurized state). Thereby, viscous resistance decreases and the vibration element 3 can be driven more efficiently and stably.

  In addition, the sealing layer 42 includes a contact portion 421 that is arranged on the contact portion 412a independently in an island shape from the periphery and is electrically connected to the contact portion 412a. Such a contact portion 421 is used as a part of wiring for connecting the vibration portion electrode 31 to the semiconductor circuit 6, similarly to the column portion 72 and the contact portion 412 a.

  As such a sealing layer 42, metal materials (conductive material), such as Al, Cu, W, Ti, TiN, can be used, for example.

  The structure 43 includes an interlayer insulating film 431, a wiring layer 432 formed on the interlayer insulating film 431, an interlayer insulating film 433 formed on the wiring layer 432 and the interlayer insulating film 431, and the interlayer insulating film 433. The wiring layer 434 is formed, and the surface protective layer 435 is formed on the wiring layer 434 and the interlayer insulating film 433. Among these, the wiring layers 432 and 434 function as wiring of the semiconductor circuit 6, and the semiconductor circuit 6 is drawn to the upper surface of the semiconductor device 1 by the wiring layers 432 and 434, and a part of the wiring layer 434 is external connection terminal 434. It has become. The surface protective layer 435 protects the semiconductor device 1 from moisture, dust, scratches, and the like.

In such a structure 43, the interlayer insulating films 431 and 433 are made of, for example, silicon dioxide (SiO ₂ ), and the wiring layers 432 and 434 are made of, for example, aluminum (Al). The protective layer 435 is made of, for example, silicon dioxide (SiO ₂ ), silicon nitride (SiN), polyimide, epoxy resin, or the like.

  The vibration element 3 is a capacitance type (electrostatic drive type) vibration element, and is disposed at the bottom of the recess 24. Thus, by arranging the vibration element 3 at the bottom of the recess 24, the semiconductor device 1 can be reduced in height.

  As shown in FIG. 2, the vibration element 3 has a vibration part electrode 31 and a substrate electrode 32 provided on the base substrate 2.

  The vibrating portion electrode 31 is disposed between the fixed portion 311 provided on the bottom surface of the concave portion 24, the vibrating body 312 opposed to the fixed portion 311 with a gap therebetween, and between the vibrating body 312 and the fixed portion 311. And a support portion 313 that supports the body 312 on the fixing portion 311. The vibrating body 312 includes a base portion 312a supported by the support portion 313 and four vibration portions 312b, 312c, 312d, and 312e connected to the base portion 312a, and has a substantially cross shape. . In addition, the number of vibration parts is not limited to four of this embodiment, 1-3 may be sufficient and five or more may be sufficient.

  On the other hand, the substrate electrode 32 includes an electrode 321 provided on the bottom surface of the recess 24 and disposed opposite to the vibrating portion 312b, and an electrode 322 provided on the bottom surface of the recess 24 and disposed opposite to the vibrating portion 312d. Have.

  Each of the vibrating portion electrode 31 and the substrate electrode 32 is made of polysilicon doped (diffused or implanted) with impurities such as phosphorus and boron, for example.

In addition, the vibration part electrode 31 and the substrate electrode 32 are electrically connected to the semiconductor circuit 6 via the column part 72, respectively, and a predetermined frequency is provided between the semiconductor circuit 6 and the vibration part electrode 31 and the substrate electrode 32. When an alternating voltage (a frequency substantially equal to the resonance frequency of the vibration part electrode 31) is applied, the vibration parts 312b and 312d and the vibration parts 312c and 312e are generated by the electrostatic force generated between the vibration body 312 and the substrate electrode 32. And vibrate in reverse phase. Then, a signal (frequency signal) based on this vibration is output from the substrate electrode 32 (or the vibration part electrode 31), and a signal having a predetermined frequency can be output by processing the output signal by the semiconductor circuit 6. .
The configuration of the semiconductor device 1 has been briefly described above.

  Next, the shape of the opening 240 of the recess 24 that is also a main feature of the semiconductor device 1 will be described in detail.

  As shown in FIG. 2, the outline of the opening 240 of the recess 24 has a substantially quadrangular shape (substantially square shape) having four sides 241, 242, 243, and 244 in plan view. A bent portion 245 is provided. Hereinafter, each of the bent portions 245 will be described in detail. Since the bent portions 245 have the same configuration, the bent portion 245 between the sides 241 and 242 will be described as a representative. The description of the three bent portions 245 is omitted.

  As shown in FIG. 3, the bent portion 245 is located between the side 241 and the side 242 and has a straight portion 245 a inclined with respect to both the sides 241 and 242. Further, the straight portion 245a is formed shorter than the sides 241 and 242. Thereby, the bending part 245 can be made small. The relationship between the length L1 of the straight portion 245a and the length L2 of the sides 241 and 242 is not particularly limited, but preferably satisfies the relationship of 0.1L2 ≦ L1 ≦ 0.2L2, for example. By satisfying such a relationship, the above effect becomes more remarkable.

  Further, the angle θ11 formed between the side 241 and the straight line portion 245a and the angle θ12 formed between the side 242 and the straight line portion 245a are both obtuse. That is, the relationship 90 ° <θ11 <180 ° is satisfied, and the relationship 90 ° <θ12 <180 ° is satisfied. By having such a bent portion 245, stress concentration at the corner of the concave portion 24 is reduced, and generation of cracks and crystal defects starting from the corner can be reduced. Thus, by reducing the occurrence of cracks in the semiconductor substrate 21, the mechanical strength of the semiconductor substrate 21 can be maintained, the airtightness of the cavity 5 can be maintained, and further, the semiconductor The disconnection of the circuit 6 can be reduced, and the reliability of the semiconductor device 1 is improved. Moreover, the electrical reliability of the semiconductor circuit 6 can be maintained by reducing the occurrence of crystal defects in the semiconductor substrate 21. Specifically, for example, when the generated crystal defect reaches the pn junction portion of the MOS transistor 61, current leaks from the crystal defect, and the electrical reliability of the semiconductor circuit 6 decreases. Therefore, by reducing the occurrence of crystal defects, the occurrence of leakage current as described above can be suppressed, and the electrical reliability of the semiconductor circuit 6 can be maintained. Here, in this embodiment, the relationship θ11 = θ12 is also satisfied. Therefore, the stress concentration on the bent portion 245 can be further reduced, and the above-described effect becomes more remarkable. However, θ11 and θ12 may be different.

  In particular, in the present embodiment, as shown in FIG. 4, at least one of the four bent portions 245 is disposed at a position close to the semiconductor circuit 6 (region where the semiconductor circuit 6 is formed) in the outline of the opening 240. ing. In other words, at least one of the four bent portions 245 is disposed between the central portion of the recess 24 and the semiconductor circuit 6. Therefore, the generation of cracks and crystal defects in the vicinity of the semiconductor circuit 6 can be effectively reduced, and the above-described effect becomes more remarkable.

Second Embodiment
FIG. 5 is a plan view showing a recess included in a semiconductor device according to the second embodiment of the present invention.

  Hereinafter, the semiconductor device according to the second embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and description of similar matters will be omitted.

  The semiconductor device of the second embodiment is the same as that of the first embodiment described above except that the contour shape of the recesses is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above. In the following, the bent portion 245 between the side 241 and the side 242 will be described as a representative, and description of the other bent portion 245 will be omitted.

  As shown in FIG. 5, in the present embodiment, the length L1 of the straight portion 245a is substantially equal to the length L2 of the sides 241 and 242. That is, the outline of the opening 240 has a substantially regular octagonal shape.

  Also according to the second embodiment, the same effects as those of the first embodiment described above can be exhibited.

<Third Embodiment>
FIG. 6 is a plan view showing a recess included in a semiconductor device according to the third embodiment of the present invention.

  Hereinafter, the semiconductor device according to the third embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and description of similar matters will be omitted.

  The semiconductor device of the second embodiment is the same as that of the first embodiment described above except that the contour shape of the recesses is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 6, the outline of the opening 240 of the recess 24 has a substantially quadrangular shape (substantially square shape) having four sides 241, 242, 243, and 244 in plan view. A curved portion 246 is provided.

  Hereinafter, each bending portion 246 will be described in detail. Since each bending portion 246 has the same configuration, the bending portion 246 between the side 241 and the side 242 will be described as a representative. The description of the bending portion 246 is omitted.

  The curved portion 246 has a curved portion 246 a that is located between the sides 241 and 242 and is continuously connected to the sides 241 and 242. The curved portion 246a is curved in a substantially arc shape. By having such a curved portion 246, stress concentration at the corner of the recess 24 is reduced, and the generation of cracks and crystal defects starting from the corner can be reduced. In addition, as long as the curve part 246a has the part of a curve, it may not be circular arc shape, and a part may be linear.

  Also according to the third embodiment, the same effects as those of the first embodiment described above can be exhibited.

<Fourth embodiment>
FIG. 7 is a plan view showing a recess included in a semiconductor device according to the fourth embodiment of the present invention.

  Hereinafter, the semiconductor device according to the fourth embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and the description of the same matters will be omitted.

  The semiconductor device of the fourth embodiment is the same as that of the first embodiment described above except that the contour shape of the recesses is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 7, the outline of the opening 240 of the recess 24 has a circular shape in plan view. In other words, the entire contour of the opening 240 is configured by the curved portion 246. By adopting such a configuration, the stress concentration on the portion having the recess 24 is reduced, and the occurrence of cracks and crystal defects can be reduced.

  According to the fourth embodiment, the same effect as that of the first embodiment described above can be exhibited.

<Fifth Embodiment>
FIG. 8 is a sectional view showing a semiconductor device according to the fifth embodiment of the present invention. FIG. 9 is a plan view showing a pressure sensor element included in the semiconductor device shown in FIG. FIG. 10 is a diagram showing a bridge circuit including the pressure sensor element shown in FIG.

  Hereinafter, a semiconductor device according to the fifth embodiment of the present invention will be described. The description will focus on differences from the above-described embodiment, and the description of the same matters will be omitted.

  The semiconductor device of the fifth embodiment is the same as that of the first embodiment described above except that the configuration of the functional elements is different and the shape of the substrate is different. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.

  As shown in FIG. 8, a diaphragm 215 that is thinner than the surrounding portion and bends and deforms by receiving pressure is provided in a portion overlapping the cavity 5 of the semiconductor substrate 21. The diaphragm 215 is formed by providing a bottomed recess 216 on the lower surface of the semiconductor substrate 21, and the lower surface serves as a pressure receiving surface 215a. When the pressure receiving surface 215a receives pressure, the diaphragm 215 bends according to the magnitude of the received pressure.

  As shown in FIG. 9, the pressure sensor element 8 as a functional element has four piezoresistive elements 81, 82, 83, 84 provided on the diaphragm 215. In addition, the piezoresistive elements 81 to 84 are electrically connected to each other via a wiring or the like, and constitute a bridge circuit 80 (Wheatstone bridge circuit) shown in FIG. The bridge circuit 80 is connected to a drive circuit (not shown) that supplies a drive voltage AVDC. The bridge circuit 80 outputs a signal (voltage) corresponding to a change in resistance value of the piezoresistive elements 81 to 84 based on the deflection of the diaphragm 215. Based on the output signal, the semiconductor circuit 6 detects the pressure applied to the diaphragm 215.

  Each of the piezoresistive elements 81 to 84 is configured, for example, by doping (diffusing or injecting) an impurity such as phosphorus or boron into the semiconductor substrate 21. Further, the wiring connecting these piezoresistive elements 81 to 84 is constituted, for example, by doping (diffusing or injecting) impurities such as phosphorus and boron into the semiconductor substrate 21 at a higher concentration than the piezoresistive elements 81 to 84. Has been.

  The semiconductor circuit 6 includes, for example, a drive circuit for supplying a voltage to the bridge circuit 80, a temperature compensation circuit for temperature compensation of the output from the bridge circuit 80, and a pressure applied from the output from the temperature compensation circuit. The pressure detection circuit to be obtained, an output circuit for converting the output from the pressure detection circuit into a predetermined output format (CMOS, LV-PECL, LVDS, etc.) and the like are included.

  According to the fifth embodiment, the same effect as that of the first embodiment described above can be exhibited.

[Electronics]
Next, the electronic apparatus of the present invention will be described.

  FIG. 11 is a perspective view illustrating a configuration of a mobile (or notebook) personal computer including the semiconductor device of the present invention.

  In this figure, a personal computer 1100 includes a main body portion 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display portion 1108. The display unit 1106 is rotated with respect to the main body portion 1104 via a hinge structure portion. It is supported movably. Such a personal computer 1100 incorporates, for example, a semiconductor device 1 used as an oscillator or a pressure sensor. Therefore, the personal computer 1100 can exhibit higher performance and higher reliability.

  FIG. 12 is a perspective view showing a configuration of a cellular phone (including PHS) including the semiconductor device of the present invention.

  In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, a earpiece 1204, and a mouthpiece 1206, and a display portion 1208 is disposed between the operation buttons 1202 and the earpiece 1204. Such a cellular phone 1200 incorporates a semiconductor device 1 used as an oscillator or a pressure sensor, for example. Therefore, the cellular phone 1200 can exhibit higher performance and higher reliability.

  FIG. 13 is a perspective view showing a configuration of a digital still camera including the semiconductor device of the present invention.

  In this figure, connection with an external device is also shown in a simplified manner. The digital still camera 1300 generates an imaging signal (image signal) by photoelectrically converting an optical image of a subject using an imaging element such as a CCD (Charge Coupled Device). A display unit 1310 is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD. The display unit 1310 displays a subject as an electronic image. Functions as a viewfinder. A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side (the back side in the drawing) of the case 1302.

  When the photographer confirms the subject image displayed on the display unit 1310 and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory 1308. In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1330 is connected to the video signal output terminal 1312 and a personal computer 1340 is connected to the input / output terminal 1314 for data communication as necessary. Further, the imaging signal stored in the memory 1308 is output to the television monitor 1330 or the personal computer 1340 by a predetermined operation. Such a digital still camera 1300 incorporates, for example, a semiconductor device 1 used as an oscillator or a pressure sensor. Therefore, the digital still camera 1300 can exhibit higher performance and higher reliability.

  In addition to the personal computer (mobile personal computer) in FIG. 11, the mobile phone in FIG. 12, and the digital still camera in FIG. Inkjet printers), laptop personal computers, televisions, video cameras, video tape recorders, car navigation devices, pagers, electronic notebooks (including those with communication functions), electronic dictionaries, calculators, electronic game devices, word processors, workstations, televisions Telephone, crime prevention TV monitor, electronic binoculars, POS terminal, medical equipment (for example, electronic thermometer, blood pressure monitor, blood glucose meter, electrocardiogram measuring device, ultrasonic diagnostic device, electronic endoscope), fish detector, various measuring devices, instruments Type (e.g., vehicle, Sky machine, gauges of a ship), can be applied to a flight simulator or the like.

[Moving object]
Next, a moving body provided with the semiconductor device of the present invention will be described.
FIG. 14 is a perspective view showing a moving body including the semiconductor device of the present invention.

  A semiconductor device 1 is mounted on an automobile (mobile body) 1500. The semiconductor device 1 is, for example, keyless entry, immobilizer, car navigation system, car air conditioner, anti-lock brake system (ABS), air bag, tire pressure monitoring system (TPMS), engine control, hybrid The present invention can be widely applied to electronic control units (ECUs) such as battery monitors for automobiles and electric vehicles, and vehicle body attitude control systems. Thus, since the automobile 1500 includes the semiconductor device 1, it can exhibit higher performance and higher reliability.

  As described above, the semiconductor device, the electronic apparatus, and the moving body of the present invention have been described based on the illustrated embodiment. However, the present invention is not limited to this, and the configuration of each unit is an arbitrary function having the same function. It can be replaced with that of the configuration. In addition, any other component may be added to the present invention. Moreover, you may combine each embodiment suitably.

  In each of the embodiments described above, the configuration in which the cavity is formed between the substrate and the lid by forming the recess in the substrate has been described. It is not limited. For example, a cavity may be formed between the substrate and the lid by forming a recess on the lower surface (substrate side) of the lid without providing the recess in the substrate, or between the substrate and the lid. Alternatively, a recess may be formed by the inner peripheral surface of the frame-shaped structure and the upper surface of the substrate with a frame-shaped structure interposed therebetween.

DESCRIPTION OF SYMBOLS 1 ... Semiconductor device 2 ... Base substrate 21 ... Semiconductor substrate 215 ... Diaphragm 215a ... Pressure-receiving surface 216 ... Recess 22 ... 1st insulating film 23 ... 2nd insulating film 24 ... Recessed 240 ... Opening Parts 241, 242, 243, 244 …… Side 245 …… Bent part 245a …… Linear part 246 …… Bent part 246a …… Curve part 3 …… Vibrating element 31 …… Vibrating part electrode 311 …… Fixing part 312 …… Vibrating body 312a …… Base portion 312b, 312c, 312d, 312e …… Vibrating portion 313 …… Supporting portion 32 …… Substrate electrode 321, 322 …… Electrode 4 …… Cover portion 41 …… Coating layer 41a …… Communication hole 411… ... Insulating layer 412 ... Conductive layer 412a ... Contact part 42 ... Sealing layer 421 ... Contact part 43 ... Structure 431 ... Interlayer insulating film 432 ... Wiring layer 4 3 ... Interlayer insulating film 434 ... Wiring layer 434 '... External connection terminal 435 ... Surface protective layer 5 ... Cavity 6 ... Semiconductor circuit 61 ... MOS transistor 71 ... Wall 711, 712, 713, 714 ... Projection 72, 72a, 72b, 72c, 72d ... Column 73 ... Reinforcement 8 ... Pressure sensor element 80 ... Bridge circuit 81, 82, 83, 84 ... Piezoresistive element 1100 ... Personal Computer 1102 …… Keyboard 1104 …… Main body 1106 …… Display unit 1108 …… Display unit 1200 …… Mobile phone 1202 …… Operation buttons 1204 …… Earpiece 1206 …… Speaker 1208 …… Display unit 1300 …… Digital Still camera 1302 …… Case 1304 …… Light receiving unit 1306 …… Shutter button 130 …… Memory 1310 …… Display 1312 …… Video signal output terminal 1314 …… Input / output terminal 1330 …… TV monitor 1340 …… Personal computer 1500 …… Automotive AVDC …… Drive voltage θ11, θ12 …… Angle L1, L2… …length

Claims (10)

A substrate,
A recess having an opening opening in the main surface of the substrate;
A circuit disposed on the substrate,
The semiconductor device according to claim 1, wherein the outline of the opening includes at least one of a bent portion bent at an obtuse angle and a curved portion bent.   The semiconductor device according to claim 1, wherein the substrate is a crystalline substrate.   3. The semiconductor device according to claim 1, wherein at least one of the bent portion and the curved portion is located between a center portion of the concave portion and the circuit.   4. The semiconductor device according to claim 1, wherein a contour of the opening includes a corner having the bent portion or the curved portion. 5.   The semiconductor device according to claim 1, further comprising a lid that covers the opening of the recess.   The semiconductor device according to claim 1, further comprising a functional element disposed at a bottom of the recess.   The semiconductor device according to claim 6, wherein the functional element is a vibration element.   The semiconductor device according to claim 6, wherein the functional element is a pressure sensor element.   An electronic apparatus comprising the semiconductor device according to claim 1.   A moving body comprising the semiconductor device according to claim 1.

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