JP2016162997A - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP2016162997A JP2016162997A JP2015043334A JP2015043334A JP2016162997A JP 2016162997 A JP2016162997 A JP 2016162997A JP 2015043334 A JP2015043334 A JP 2015043334A JP 2015043334 A JP2015043334 A JP 2015043334A JP 2016162997 A JP2016162997 A JP 2016162997A
- Authority
- JP
- Japan
- Prior art keywords
- members
- plasma processing
- space
- processing apparatus
- vertical direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000012545 processing Methods 0.000 title claims abstract description 134
- 230000007246 mechanism Effects 0.000 claims description 49
- 238000009826 distribution Methods 0.000 abstract description 20
- 239000007789 gas Substances 0.000 description 83
- 230000002093 peripheral effect Effects 0.000 description 21
- 238000005530 etching Methods 0.000 description 10
- 238000004088 simulation Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000005259 measurement Methods 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000006073 displacement reaction Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000003507 refrigerant Substances 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- NCGICGYLBXGBGN-UHFFFAOYSA-N 3-morpholin-4-yl-1-oxa-3-azonia-2-azanidacyclopent-3-en-5-imine;hydrochloride Chemical compound Cl.[N-]1OC(=N)C=[N+]1N1CCOCC1 NCGICGYLBXGBGN-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32816—Pressure
- H01J37/32834—Exhausting
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32633—Baffles
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma Technology (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
Abstract
Description
<シミュレーションの条件>
・円筒部61aの外径(直径):550mm
・円筒部61aの板厚:5mm
・貫通孔61hの幅:3.5mm
・貫通孔61hの長さ:30mm
・本体部62aの内側曲面62iの軸線AXから距離r1:275.2mm
・ガス供給部GSによるガス供給:N2ガス(200sccm)
Claims (4)
- 被処理体に対してプラズマ処理を行うためのプラズマ処理装置であって、
処理容器と、
前記処理容器内に設けられた載置台であり、前記被処理体が載置される載置領域を有する該載置台と、
前記載置領域よりも下方で前記載置台と前記処理容器との間に介在して、前記処理容器内に、前記載置領域が配置される第1空間と前記載置領域よりも下方の第2空間とを規定するバッフル構造であり、
前記載置台と前記処理容器との間において延びる円筒部を含み、鉛直方向に長尺の複数の貫通孔が周方向に配列するよう該円筒部に形成された第1部材、及び、
前記円筒部の径方向外側に配置される一以上の第2部材であり、前記円筒部の外径よりも大径の内径を有する円筒体を構成するよう配置可能な、該一以上の第2部材と、
を有する該バッフル構造と、
前記第1空間に接続されたガス供給部と、
前記第2空間に接続された排気装置と、
前記一以上の第2部材を鉛直方向において移動させ、且つ、前記円筒体の周方向における複数の領域を個別に鉛直方向に移動させ、前記一以上の第2部材を径方向に移動させ、又は、前記一以上の第2部材を鉛直方向に対して傾斜させるよう構成された駆動機構と、
を備える、プラズマ処理装置。 - 前記一以上の第2部材は、複数の第2部材であり、
前記複数の第2部材は円筒体を構成するように周方向に配列可能であり、
前記駆動機構は、前記複数の第2部材を個別に鉛直方向に移動させるよう構成されている、
請求項1に記載のプラズマ処理装置。 - 前記一以上の第2部材は、単一の第2部材であり、
前記駆動機構は、前記単一の第2部材を、鉛直方向及び径方向に移動させるよう構成されている、
請求項1に記載のプラズマ処理装置。 - 前記一以上の第2部材は、単一の第2部材であり、
前記駆動機構は、前記単一の第2部材を、鉛直方向に移動させ、且つ、該鉛直方向に対して傾斜させるよう構成されている、
請求項1に記載のプラズマ処理装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015043334A JP6523714B2 (ja) | 2015-03-05 | 2015-03-05 | プラズマ処理装置 |
KR1020160023404A KR102353793B1 (ko) | 2015-03-05 | 2016-02-26 | 플라즈마 처리 장치 |
US15/055,783 US20160260582A1 (en) | 2015-03-05 | 2016-02-29 | Plasma processing apparatus |
US16/868,849 US11348768B2 (en) | 2015-03-05 | 2020-05-07 | Plasma processing apparatus |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015043334A JP6523714B2 (ja) | 2015-03-05 | 2015-03-05 | プラズマ処理装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2016162997A true JP2016162997A (ja) | 2016-09-05 |
JP6523714B2 JP6523714B2 (ja) | 2019-06-05 |
Family
ID=56847326
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015043334A Active JP6523714B2 (ja) | 2015-03-05 | 2015-03-05 | プラズマ処理装置 |
Country Status (3)
Country | Link |
---|---|
US (2) | US20160260582A1 (ja) |
JP (1) | JP6523714B2 (ja) |
KR (1) | KR102353793B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170207102A1 (en) * | 2016-01-15 | 2017-07-20 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
JP2020177986A (ja) * | 2019-04-16 | 2020-10-29 | 株式会社アルバック | 成膜装置及び成膜方法 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP6423706B2 (ja) * | 2014-12-16 | 2018-11-14 | 東京エレクトロン株式会社 | プラズマ処理装置 |
KR101866215B1 (ko) * | 2016-12-29 | 2018-07-19 | 인베니아 주식회사 | 샤워헤드를 포함하는 플라즈마 처리장치 |
KR102449621B1 (ko) | 2017-08-22 | 2022-09-30 | 삼성전자주식회사 | 쉬라우드 유닛 및 이를 포함하는 기판 처리 장치 |
JP2019075517A (ja) * | 2017-10-19 | 2019-05-16 | 東京エレクトロン株式会社 | 処理装置及び拡散路を有する部材 |
KR101991801B1 (ko) * | 2017-12-29 | 2019-06-21 | 세메스 주식회사 | 기판 처리 장치 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321605A (ja) * | 1997-05-20 | 1998-12-04 | Tokyo Electron Ltd | プラズマ処理装置 |
US6261408B1 (en) * | 2000-02-16 | 2001-07-17 | Applied Materials, Inc. | Method and apparatus for semiconductor processing chamber pressure control |
JP2004327767A (ja) * | 2003-04-25 | 2004-11-18 | Tokyo Electron Ltd | プラズマ処理装置 |
US20050268850A1 (en) * | 2004-06-02 | 2005-12-08 | Beom-Suk Ma | Plasma processing system |
JP2012015451A (ja) * | 2010-07-05 | 2012-01-19 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
JP2012513094A (ja) * | 2008-12-19 | 2012-06-07 | ラム リサーチ コーポレーション | 複合型ウエハ領域圧力制御およびプラズマ閉じ込めアセンブリ |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5997589A (en) * | 1998-07-09 | 1999-12-07 | Winbond Electronics Corp. | Adjustment pumping plate design for the chamber of semiconductor equipment |
JP2001196313A (ja) | 2000-01-12 | 2001-07-19 | Huabang Electronic Co Ltd | 半導体加工チャンバとその制御方法 |
US6531069B1 (en) * | 2000-06-22 | 2003-03-11 | International Business Machines Corporation | Reactive Ion Etching chamber design for flip chip interconnections |
WO2002014810A2 (en) * | 2000-08-10 | 2002-02-21 | Tokyo Electron Limited | Method and apparatus for tuning a plasma reactor chamber |
JP2002270598A (ja) * | 2001-03-13 | 2002-09-20 | Tokyo Electron Ltd | プラズマ処理装置 |
US6527911B1 (en) * | 2001-06-29 | 2003-03-04 | Lam Research Corporation | Configurable plasma volume etch chamber |
KR20030090305A (ko) * | 2002-05-22 | 2003-11-28 | 동경엘렉트론코리아(주) | 플라즈마 발생장치의 가스 배기용 배플 플레이트 |
KR100635217B1 (ko) * | 2005-04-12 | 2006-10-17 | 주식회사 에이디피엔지니어링 | 플라즈마 처리장치 |
JP4815538B2 (ja) * | 2010-01-15 | 2011-11-16 | シーケーディ株式会社 | 真空制御システムおよび真空制御方法 |
KR101552666B1 (ko) * | 2013-12-26 | 2015-09-11 | 피에스케이 주식회사 | 기판 처리 장치 및 방법 |
CN105742203B (zh) * | 2014-12-10 | 2019-08-13 | 中微半导体设备(上海)股份有限公司 | 一种改变气体流动模式的装置及晶圆处理方法和设备 |
US9793097B2 (en) * | 2015-07-27 | 2017-10-17 | Lam Research Corporation | Time varying segmented pressure control |
KR102449621B1 (ko) * | 2017-08-22 | 2022-09-30 | 삼성전자주식회사 | 쉬라우드 유닛 및 이를 포함하는 기판 처리 장치 |
-
2015
- 2015-03-05 JP JP2015043334A patent/JP6523714B2/ja active Active
-
2016
- 2016-02-26 KR KR1020160023404A patent/KR102353793B1/ko active IP Right Grant
- 2016-02-29 US US15/055,783 patent/US20160260582A1/en not_active Abandoned
-
2020
- 2020-05-07 US US16/868,849 patent/US11348768B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10321605A (ja) * | 1997-05-20 | 1998-12-04 | Tokyo Electron Ltd | プラズマ処理装置 |
US6261408B1 (en) * | 2000-02-16 | 2001-07-17 | Applied Materials, Inc. | Method and apparatus for semiconductor processing chamber pressure control |
JP2004327767A (ja) * | 2003-04-25 | 2004-11-18 | Tokyo Electron Ltd | プラズマ処理装置 |
US20050268850A1 (en) * | 2004-06-02 | 2005-12-08 | Beom-Suk Ma | Plasma processing system |
JP2012513094A (ja) * | 2008-12-19 | 2012-06-07 | ラム リサーチ コーポレーション | 複合型ウエハ領域圧力制御およびプラズマ閉じ込めアセンブリ |
JP2012015451A (ja) * | 2010-07-05 | 2012-01-19 | Tokyo Electron Ltd | 基板処理装置及び基板処理方法 |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20170207102A1 (en) * | 2016-01-15 | 2017-07-20 | Kabushiki Kaisha Toshiba | Semiconductor manufacturing apparatus and semiconductor manufacturing method |
JP2020177986A (ja) * | 2019-04-16 | 2020-10-29 | 株式会社アルバック | 成膜装置及び成膜方法 |
JP7250599B2 (ja) | 2019-04-16 | 2023-04-03 | 株式会社アルバック | 成膜装置及び成膜方法 |
Also Published As
Publication number | Publication date |
---|---|
JP6523714B2 (ja) | 2019-06-05 |
US20200266034A1 (en) | 2020-08-20 |
KR20160108162A (ko) | 2016-09-19 |
US20160260582A1 (en) | 2016-09-08 |
US11348768B2 (en) | 2022-05-31 |
KR102353793B1 (ko) | 2022-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6438320B2 (ja) | プラズマ処理装置 | |
JP6523714B2 (ja) | プラズマ処理装置 | |
US11037762B2 (en) | Plasma processing apparatus | |
JP5222442B2 (ja) | 基板載置台、基板処理装置及び被処理基板の温度制御方法 | |
KR102621517B1 (ko) | 기판 처리 장치 | |
US9991100B2 (en) | Plasma processing apparatus and control method | |
JP6173936B2 (ja) | 載置台及びプラズマ処理装置 | |
US11342165B2 (en) | Plasma processing method | |
US11133203B2 (en) | Plasma processing apparatus | |
JP2016076649A (ja) | ガス供給機構及び半導体製造装置 | |
US20210320009A1 (en) | Plasma processing apparatus | |
JP6308858B2 (ja) | 静電チャック、載置台、プラズマ処理装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20171208 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20180907 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20181023 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20181207 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20190402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20190426 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6523714 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |