JP2016162537A - Light emitting device and method for manufacturing light emitting device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a light emitting device, such as an organic EL device, including a transparent electrode comprising a conductive layer and a transparent conductive layer, in which a thin conductive line used in the light emitting device is not easily viewed.SOLUTION: A light emitting device 1 includes a transparent base material 11 and an antireflection layer 12 formed on one surface 11a of the transparent base material 11 and made of a conductive material or an insulating material. The light emitting device is formed by laminating at least a conductive layer 13, a transparent conductive layer 14, a light emitting functional layer 21 and an electrode 22, in the order, on the transparent base material 11 and the antireflection layer 12.SELECTED DRAWING: Figure 1

Description

  The present invention relates to a light emitting device and a method for manufacturing the light emitting device, and particularly to a light emitting device that can be configured as organic electroluminescence and a method for manufacturing the same.

In recent years, spontaneous light-emitting elements such as organic electroluminescence elements (hereinafter referred to as “organic EL elements”) have been put into practical use as next-generation display devices following liquid crystal display elements (LCDs). In addition, research and development of a light-emitting device including a light-emitting element type display panel in which such spontaneous light-emitting elements are two-dimensionally arranged has been performed.
The organic EL element includes an anode, an electrode, and an organic EL layer (light emitting functional layer) formed between the pair of electrodes, for example, having a light emitting functional layer and a hole injection layer. The organic EL element emits light by energy generated by recombination of holes and electrons in the light emitting functional layer.

  The transparent electrode on the light extraction side of such an organic EL element is generally formed using tin-doped indium oxide (ITO), zinc-doped indium oxide (IZO), or the like. These transparent conductive layers have advantages such as high light transmittance and high brightness. However, these transparent conductive layers have large electrical resistance values and low electrical conductivity. For this reason, for example, when a transparent conductive layer is used for the organic electroluminescence element, there is a problem in that power consumption increases when a predetermined amount of light is obtained.

  As a transparent electrode that suppresses power consumption of the transparent electrode, there is a transparent electrode that does not use ITO. In the case of a transparent electrode not using ITO, for example, a conductive layer in which a fine line structure portion formed of at least one of a metal and an alloy such as a uniform mesh, stripe type, or grid type is arranged. Then, a transparent electrode is formed by forming a transparent conductive layer on the conductive layer by using, for example, an ink obtained by dissolving or dispersing a conductive polymer material in an appropriate solvent using a coating method or a printing method. Such a transparent electrode is described in Patent Document 1 and Patent Document 2, for example.

JP 2005-302508 A JP 2006-93123 A

However, when a thin metal wire structure is used for the conductive layer of the transparent electrode, the metal wiring structure is likely to be visually recognized depending on the reflectivity, width, and glossiness of the metal. For this reason, the transparent electrode which has a metal wiring structure had the problem that it cannot be used for a use (for example, direct view or indirect view use) which has a malfunction, if wiring is recognized as an organic electroluminescent light-emitting device.
The present invention has been made in view of the above points, and provides a light-emitting device and a light-emitting device in which the conductive thin wires used in the organic EL element are difficult to see and the application is not limited. Objective.

In order to solve the above problems, an embodiment of a light-emitting device of the present invention includes a transparent substrate, and an antireflection layer formed on one surface of the transparent substrate and made of a conductive material or an insulating material. It is formed by laminating at least a conductive layer, a transparent conductive layer, a light emitting functional layer, and an electrode in this order on the antireflection layer side of the material.
One aspect of the method for producing a light emitting device of the present invention includes a step of forming an antireflection layer made of a conductive material or an insulating material on one surface of a transparent substrate, and at least a conductive layer on the antireflection layer side of the transparent substrate. And laminating a transparent conductive layer, a light emitting functional layer, and an electrode in this order.

  Since the antireflection layer is formed under the conductive layer formed on the transparent substrate by the light emitting device of the present invention, a light emitting device in which the conductive layer is difficult to recognize and a method for manufacturing the light emitting device are obtained. Therefore, a light-emitting device and a light-emitting device that are not limited in application can be provided.

It is a figure for demonstrating the light-emitting device of 1st Embodiment of this invention. It is the figure which showed the existing light-emitting device. It is the figure which showed the other example of the reflection preventing layer shown to Fig.1 (a). It is a figure for demonstrating the manufacturing method of the light-emitting device of 1st Embodiment. It is a figure for demonstrating the manufacturing method of the light-emitting device of 1st Embodiment following FIG. 4-1. It is a figure for demonstrating the light-emitting device of 2nd Embodiment of this invention. It is a figure for demonstrating the light-emitting device of 3rd Embodiment of this invention.

Hereinafter, the light emitting device and the method for manufacturing the light emitting device according to the first embodiment, the second embodiment, and the third embodiment of the present invention will be described.
[First Embodiment]
Hereinafter, the light emitting device according to the first embodiment and the method for manufacturing the light emitting device will be described. The light emitting device of the first embodiment is an organic EL element.

(Light emitting device)
1A and 1B are diagrams for explaining the light emitting device 1 according to the first embodiment. FIG. 1A is a top view of the light emitting device 1, and FIG. It is sectional drawing which cut | disconnected the upper surface shown to a) by line BB '. As shown in FIGS. 1A and 1B, the light-emitting device 1 shown in FIG. 1 is formed on a transparent base material 11 and one surface of the transparent base material, and is made of a conductive material or an insulating material. Layer 120, and is formed by laminating at least the conductive layer 13, the transparent conductive layer 14, the light emitting functional layer 21, and the electrode 22 in this order on the transparent substrate 11 and the antireflection layer 120.

  That is, the light emitting device 1 includes a transparent base material 11, an antireflection layer 120 formed on the upper surface 11 a that is one surface of the transparent base material 11 and made of a conductive material or an insulating material, and a transparent base material of the antireflection layer 120. The conductive layer 13 formed on the back surface 12a with respect to the surface in contact with 11, the back surface 14a with respect to the surface of the transparent conductive layer 14 in contact with the top surface 11a, and the light emitting functional layer 21 having a light emitting function, and the light emitting functional layer 21 being transparent And an electrode 22 formed on the back surface 21 a with respect to the surface in contact with the conductive layer 14. Furthermore, the light emitting device 1 of the first embodiment includes the transparent conductive layer 14, the light emitting functional layer 21, the adhesive layer 23 that covers the electrode 22, and the transparent conductive layer 14, the light emitting functional layer 21, the electrode bonded to the adhesive layer 23. The sealing base material 24 which seals 22 is provided.

In the light emitting device 1, the transparent substrate 11, the antireflection layer 120, the conductive layer 13, and the transparent conductive layer 14 constitute the transparent electrode 10.
In the light emitting device 1 shown in FIG. 1, the transparent electrode 10 functions as an anode, and the electrode 22 functions as a cathode.
The antireflection layer 120 of the light emitting device 1 has a conductive material having a shape in which the length in the first direction (assumed to be the y direction) is longer than the length in the second direction (x direction) orthogonal to the y direction when viewed from above. Alternatively, a plurality of antireflection thin wires 12 made of an insulating material are included. The plurality of antireflection thin wires 12 are arranged in parallel in the x direction. The plurality of antireflection thin wires 12 arranged in this way are also referred to as “having a stripe shape” in the first embodiment. FIG. 1A shows a state in which a plurality of antireflection thin wires 12 are arranged on the transparent substrate 11 so as to form a stripe shape.

  Here, in order to compare with the light emitting device of the first embodiment, a cross section of the existing light emitting device 100 is shown in FIG. The light-emitting device shown in FIG. 2 is similar to the light-emitting device shown in FIG. 1B. The transparent substrate 11, the conductive layer 13, the transparent conductive layer 14, the light-emitting functional layer 21, the electrode 22, the adhesive layer 23, and the seal A stop base 24 is provided. The light emitting device 100 is different from the light emitting device 1 in that the antireflection layer 120 is not provided.

In the existing light emitting device 100, only the conductive layer 13 is formed on the transparent substrate 11. For this reason, when the light-emitting device 100 is viewed directly or indirectly, the light is reflected from the thin line serving as the conductive layer 13, and thus the conductive layer 13 that is a thin line is easily visible.
However, as shown in FIGS. 1A and 1B, in the first embodiment, the antireflection thin wire 12 is formed immediately below the conductive layer 13. By forming the antireflection thin wire 12, in the first embodiment, the light reflected from the thin conductive layer 13 is reduced, and the conductive layer 13 is hardly visible. For this reason, 1st Embodiment can provide the light-emitting device with high brightness | luminance in which the conductive layer 13 is not visually recognized, when it uses for the use etc. which look directly or indirectly.

Hereafter, each member shown to Fig.1 (a) and FIG.1 (b) is demonstrated in detail.
(Transparent electrode)
As described above, the transparent electrode 10 includes the transparent substrate 11, the antireflection layer 120, the conductive layer 13, and the transparent conductive layer 14. The conductive layer 13 is composed of at least one of a thin metal and an alloy having a width equal to or less than the length of the antireflection thin wire 12 included in the antireflection layer 120 in the x direction (hereinafter referred to as “width”). The The transparent conductive layer 14 is formed using a coating method or a printing method. The transparent electrode 10 is produced in the order of the transparent base 11, the antireflection layer 120, the conductive layer 13, and the transparent conductive layer 14.

The transparent electrode 10 of the first embodiment has a surface resistivity of 0.01Ω / □ or more and 100Ω / □ or less in terms of sheet resistance from the viewpoint of improving luminance when used in an organic EL element. Is more preferable, and more preferably 0.1Ω / □ or more and 10Ω / □ or less.
Moreover, the transparent electrode 10 of 1st Embodiment can be used for LCD, an electroluminescent element, a plasma display, an electrochromic display, a solar cell, transparent electrodes, such as a touch panel, electronic paper, and an electromagnetic shielding material. Furthermore, since it is excellent in electroconductivity and transparency and has high smoothness, it is preferably used for an organic EL element.

(Transparent substrate)
In the present invention, a plastic film, a plastic plate, glass or the like can be used as the transparent substrate 11.
Examples of raw materials for plastic films and plastic plates include polyesters such as polyethylene terephthalate (PET) and polyethylene naphthalate, polyolefins such as polyethylene (PE), polypropylene (PP), polystyrene, and EVA, polyvinyl chloride, poly Vinyl resins such as vinylidene chloride, polyether ether ketone (PEEK), polysulfone (PSF), polyether sulfone (PES), polycarbonate (PC), polyamide, polyimide, acrylic resin, and triacetyl cellulose (TAC) are used. be able to.

  The transparent substrate 11 is preferably excellent in surface smoothness. The smoothness of the surface is preferably such that the arithmetic average roughness Ra is 5 nm or less and the maximum height Ry is 50 nm or less, more preferably Ra is 1 nm or less and Ry is 20 nm or less. In the first embodiment, the surface of the transparent substrate 11 may be smoothed by providing an undercoat layer such as a thermosetting resin, an ultraviolet curable resin, an electron beam curable resin, or a radiation curable resin. In the first embodiment, the surface of the transparent substrate 11 can also be smoothed by machining such as polishing. Furthermore, in the first embodiment, surface treatment with corona, plasma, or UV / ozone may be performed in order to improve the application and adhesion of the transparent conductive layer 14 to the transparent substrate 11. Here, the smoothness of the surface of the transparent substrate 11 can be calculated from measurement using an atomic force microscope (AFM) or the like.

  Moreover, it is preferable to provide a gas barrier layer on the surface of the transparent substrate 11 for the purpose of blocking oxygen and moisture in the atmosphere. As a material for forming the gas barrier layer, metal oxides and metal nitrides such as silicon oxide, silicon nitride, silicon oxynitride, aluminum nitride, and aluminum oxide can be used. These materials have an oxygen barrier function in addition to the water vapor barrier function. In particular, silicon nitride and silicon oxynitride having favorable barrier properties, solvent resistance, and transparency are preferable. Further, the gas barrier layer can have a multilayer structure as required. The multilayer structure may be composed of only an inorganic layer, or may be composed of an inorganic layer and an organic layer. As a method for forming the gas barrier layer, a resistance heating vapor deposition method, an electron beam vapor deposition method, a reactive vapor deposition method, an ion plating method, and a sputtering method can be used depending on the material of the transparent substrate 11. Moreover, although it does not specifically limit regarding the thickness of a gas barrier layer, Typically, it is preferable to exist in the range of 5 nm-500 nm per layer, More preferably, it is 10 nm-200 nm per layer. The gas barrier layer is provided on at least one surface of the transparent substrate 11 and is preferably provided on both surfaces.

(Antireflection layer)
The antireflection layer 120 of the first embodiment preferably has a low reflectance of 10% or less, and in the case of a single layer structure, a photopolymerizable material is used. As a specific example of the antireflection layer of the photopolymerization material, a low reflection material such as a resin black matrix (BM) using carbon black used as a color filter for a liquid crystal display is preferable. Further, a general anti-glare (AG) structure may be used. In the case of a laminated structure, the antireflection layer 120 may have a general anti-reflection (AR) structure.

In the present embodiment, the surface of the antireflection layer 120 can be provided with fine irregularities to form an AG structure, or a smooth material can be laminated to form an AR structure.
In the first embodiment, as shown in FIG. 1A, the antireflection layer 120 is formed in a stripe shape using a plurality of antireflection thin wires 12, so that the conductive layer 13 is directly above the transparent substrate 11. Non-visibility can be improved as compared with the case of disposing the cover. The width of the bottom surface of the conductive 13 or the antireflection thin wire 12 in contact with the transparent substrate 11 is arbitrary, but is preferably between about 0.1 μm and 1000 μm. The spacing between the antireflection thin wires 12 is preferably 5 μm to 5 cm, and more preferably 10 μm to 1 cm.

Further, the length (height or thickness) in the z direction shown in FIGS. 1A and 1B of the antireflection thin wire 12 is preferably 0.05 μm or more and 10 μm or less, and more preferably 0.8 μm. 1 μm or more and 1 μm or less.
In the first embodiment, the light transmittance is reduced by disposing the antireflection layer 120. Since it is important that the decrease in the transmittance is as small as possible, it is preferable to transmit light of 80% or more without excessively narrowing the interval between the antireflection thin wires 12 or making the width of the antireflection thin wires 12 too large. It is desirable to ensure the rate.

(Conductive layer)
The conductive layer 13 of the first embodiment is formed on the antireflection thin wire 12. For this reason, the conductive layer 13 also has a linear shape that is longer in the y direction than in the x direction, like the antireflection thin wire 12. The plurality of conductive layers 13 are arranged in parallel in one direction to form a stripe shape. The material of the conductive layer 13 preferably has a low electric resistance, and a material having an electric conductivity of 10 ⁷ S / cm or more is used. As a specific example of the conductive material, any one of metals such as aluminum, silver, chromium, gold, copper, tantalum, and molybdenum, or an alloy thereof can be used. Among such materials, it is preferable to use at least one of aluminum, chromium, copper, silver, and alloys thereof from the viewpoint of high electrical conductivity and ease of material handling.
The height (thickness) of the conductive layer 13 is preferably 0.05 μm or more and 10 μm or less, more preferably 0.1 μm or more and 1 μm or less. The relationship between the width and height of each conductive layer 13 may be determined according to the desired conductivity. The conductive layer 13 may be composed of only the same conductive layer, or may be composed of a combination of different conductive layers.

(Transparent conductive layer)
The transparent conductive layer 14 of the first embodiment can be formed as a coated electrode layer formed by a coating method. The solution used when forming the coating electrode layer by a coating method includes a material to be the coating electrode layer and a solvent. The coated electrode layer preferably contains a polymer compound exhibiting conductivity. This polymer compound may contain a dopant. The conductivity of the polymer compound is usually 10 ⁻⁵ to 10 ⁵ S / cm, preferably 10 ⁻³ to 10 ⁵ S / cm in terms of conductivity. Moreover, it is preferable that the transparent conductive layer 14 is made of a polymer compound substantially exhibiting conductivity. As a constituent material of the transparent conductive layer 14, polyaniline and derivatives thereof, polythiophene and derivatives thereof, and the like can be used.

A well-known dopant can be used as a dopant contained in a high molecular compound. Examples of the known dopant include organic sulfonic acids such as polystyrene sulfonic acid and dodecylbenzene sulfonic acid, and Lewis acids such as PF ₅ , AsF ₅ , and SbF ₅ . Further, the polymer compound exhibiting conductivity may be a self-doped polymer compound in which a dopant is directly bonded to the polymer compound.

  The transparent conductive layer 14 is preferably composed of at least one of polythiophene and polythiophene derivatives, and is preferably substantially composed of at least one of polythiophene and polythiophene derivatives (at least one of polythiophene and polythiophene derivatives is , May contain a dopant). Polythiophene, a derivative of polythiophene, or a mixture of a polythiophene and a polythiophene derivative is easily dissolved or dispersed in water or an aqueous solvent such as alcohol, and thus is preferably used as a solute of a coating solution in a coating method.

  In addition, polythiophene, polythiophene derivatives, or a mixture of polythiophene and polythiophene derivatives has high conductivity, and is preferably used as an electrode material. Furthermore, polythiophene, polythiophene derivatives, or a mixture of polythiophene and polythiophene derivatives has a HOMO energy of about 5.0 eV, and the difference from the HOMO energy of a light emitting functional layer used in a known organic EL element is about 1 eV. And low. Therefore, polythiophene, a derivative of polythiophene, or a mixture of polythiophene and a derivative of polythiophene can efficiently inject holes into the light-emitting functional layer, and thus can be particularly suitably used as an anode material. . Further, it has high transparency and is suitably used as an electrode on the light emission extraction side of the organic EL element.

  The transparent conductive layer 14 is preferably configured to include at least one of polyaniline and a polyaniline derivative, and is preferably substantially composed of at least one of polyaniline and a polyaniline derivative. At this time, at least one of the polyaniline and the polyaniline derivative may contain a dopant. Since at least one of polyaniline and a polyaniline derivative is excellent in conductivity and stability, it is preferably used as an electrode material. Further, it has high transparency and is suitably used as an electrode on the light emission extraction side of the organic EL element.

  The light emitting device 1 according to the first embodiment configured as an organic EL element uses the transparent electrode 10 described above as an anode. Then, the light emitting functional layer 21 and the electrode 22 functioning as a cathode are provided for the transparent electrode 10. The periphery of the electrode 22 is covered with an adhesive layer 23 and sealed with a sealing substrate 24. As for the structure (hereinafter referred to as “sealing structure”) by the adhesive layer 23 and the sealing substrate 24, any known materials and structures used for organic EL elements can be used.

The following can be considered as the layer structure of the light emitting device of the first embodiment. In the following notation, the symbol “/” indicates that the layers sandwiching the symbol “/” are adjacently stacked. In the following notation, “anode” corresponds to the transparent conductive layer 14 of the first embodiment, and “cathode” corresponds to the electrode 22 of the first embodiment.
Anode / light emitting functional layer / cathode Anode / hole transport layer / light emitting functional layer / electron transport layer / cathode Anode / hole injection layer / hole transport layer / light emitting functional layer / electron transport layer / cathode Anode / hole injection layer / Light emitting functional layer / electron transport layer / electron injection layer / cathode anode / hole injection layer / light emitting functional layer / electron injection layer / cathode

The light emitting device 1 of the first embodiment may have two or more light emitting functional layers, and as the light emitting device 1 having two or more light emitting functional layers, for example, the following layer structure is used. Can do.
Anode / charge injection layer / hole transport layer / light emission functional layer / electron transport layer / charge injection layer / charge generation layer / charge injection layer / hole transport layer / light emission functional layer / electron transport layer / charge injection layer / cathode

As the light emitting device 1 having three or more light emitting functional layers, specifically,
The following layer structure including two or more repeating units can be used in which “charge generation layer / charge injection layer / hole transport layer / light emitting functional layer / electron transport layer / charge injection layer” is one repeating unit. .
Anode / charge injection layer / hole transport layer / light emitting functional layer / electron transport layer / charge injection layer / “repeating unit” / “repeating unit” /... / Cathode In the above layer structure, anode, cathode, light emitting functional layer Each layer other than can be deleted as necessary. Here, the charge generation layer is a layer that generates holes and electrons by applying an electric field. As the charge generation layer, for example, a thin film made of vanadium oxide, ITO, molybdenum oxide, or the like can be used.

Hereinafter, the hole injection layer, the hole transport layer, the light emitting functional layer, the electron transport layer, the electron injection layer, each layer of the cathode, and the sealing structure will be described.
(Layer provided between transparent electrode and light emitting functional layer)
As a layer provided between the transparent electrode 10 (anode) and the light emitting functional layer 21 as necessary, there are a hole injection layer, a hole transport layer, an electron block layer, and the like. The hole injection layer is a layer having a function of improving the hole injection efficiency from the transparent electrode 10. The hole transport layer is a layer having a function of improving hole injection from a hole injection layer or a layer closer to the transparent electrode 10. Further, when the hole injection layer or the hole transport layer has a function of stopping the transport of electrons, these layers may be referred to as an electron block layer. Having the function of stopping the transport of electrons can be confirmed, for example, by producing a device that allows only an electron current to flow, and by reducing the current value.

(Hole injection layer)
The hole injection layer can be provided between the anode and the hole transport layer, or between the anode and the light emitting functional layer. As a material for the hole injection layer, a known material can be appropriately used, and there is no particular limitation. Examples of the material for the hole injection layer include phenylamine, starburst amine, phthalocyanine, hydrazone derivative, carbazole derivative, triazole derivative, imidazole derivative, oxadiazole derivative having amino group, vanadium oxide, tantalum oxide And oxides such as molybdenum oxide, amorphous carbon, polyaniline, and polythiophene derivatives.

  As a method for forming the hole injection layer, for example, there is a method of forming a film from a solution containing a material (hole injection material) that becomes the hole injection layer. The solvent used when forming a film from a solution is not particularly limited as long as it dissolves the hole injection material, and is a chlorine-based solvent such as chloroform, methylene chloride, dichloroethane, an ether-based solvent such as tetrahydrofuran, There are aromatic hydrocarbon solvents such as toluene and xylene, ketone solvents such as acetone and methyl ethyl ketone, ester solvents such as ethyl acetate, butyl acetate and ethyl cellosolve acetate, and water.

Examples of the method for forming a film from a solution include spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, spray coating, and screen printing. There are coating methods such as a flexographic printing method, an offset printing method, a slit coating method, an ink jet printing method, and a nozzle printing method.
The thickness of the hole injection layer is preferably about 5 to 300 nm. If the thickness of the hole injection layer is less than 5 nm, the production tends to be difficult. On the other hand, when the thickness of the hole injection layer exceeds 300 nm, the driving voltage and the voltage applied to the hole injection layer tend to increase.

(Hole transport layer)
The material constituting the hole transport layer is not particularly limited. For example, N, N′-diphenyl-N, N′-di (3-methylphenyl) 4,4′-diaminobiphenyl (TPD), 4 , 4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (NPB) and other aromatic amine derivatives, polyvinylcarbazole or derivatives thereof, polysilane or derivatives thereof, aromatic amines in the side chain or main chain Polysiloxane derivative having pyrazole, pyrazoline derivative, arylamine derivative, stilbene derivative, triphenyldiamine derivative, polyaniline or derivative thereof, polythiophene or derivative thereof, polyarylamine or derivative thereof, polypyrrole or derivative thereof, poly (p-phenylene vinylene) Or its derivatives, or poly (2,5-thienylene vinylene) or a derivative thereof is exemplified.

  Among the above materials, as the hole transport material used for the hole transport layer, polyvinyl carbazole or a derivative thereof, polysilane or a derivative thereof, a polysiloxane derivative having an aromatic amine in a side chain or a main chain, a polyaniline or a derivative thereof, polythiophene Alternatively, a polymer hole transport material such as a derivative thereof, polyarylamine or a derivative thereof, poly (p-phenylene vinylene) or a derivative thereof, or poly (2,5-thienylene vinylene) or a derivative thereof is preferable. When using a low molecular weight hole transport material, it is preferable to use it dispersed in a polymer binder.

  The method for forming the hole transport layer is not particularly limited, but when a low molecular hole transport material is used, there is a method of forming a film from a mixed liquid containing a polymer binder and a hole transport material. is there. In the case of using a polymer hole transport material, there is a method of forming a film from a solution containing the hole transport material. The solvent used for film formation from a solution is not particularly limited as long as it can dissolve a hole transport material, and for example, a solvent used in a hole injection layer can be used. For film formation from a solution, a coating method similar to the above-described coating method of the hole injection layer can be used.

  The thickness of the hole transport layer is not particularly limited, but can be appropriately changed according to the intended design, and is preferably about 1 to 1000 nm. When the thickness of the hole transport layer is less than 1 nm, the production tends to be difficult or the effect of hole transport cannot be obtained sufficiently. On the other hand, when the thickness of the hole transport layer exceeds 1000 nm, the driving voltage and the voltage applied to the hole transport layer tend to increase. Therefore, the thickness of the hole transport layer is preferably 1 to 1000 nm, more preferably 2 to 500 nm, and still more preferably 5 to 200 nm.

(Light emitting functional layer)
The light emitting functional layer 21 has an organic substance (low molecular compound and high molecular compound) that mainly emits fluorescence or phosphorescence. The light emitting functional layer 21 may further contain a dopant material. Examples of the material for forming the light emitting functional layer used in the first embodiment include the following materials.

Examples of the dye-based material of the light-emitting functional layer 21 include a cyclopentamine derivative, a quinacudrine derivative, a coumarin derivative, a tetraphenylbutadiene derivative compound, a triphenylamine derivative, an oxadiazole derivative, a pyrazoloquinoline derivative, and distyryl. Examples include benzene derivatives, distyrylarylene derivatives, pyrrole derivatives, thiophene ring compounds, pyridine ring compounds, perinone derivatives, perylene derivatives, oligothiophene derivatives, oxadiazole dimers, and pyrazoline dimers.

Metal Complex Material As the metal complex material of the light emitting functional layer 21, for example, a metal complex having light emission from a triplet excited state such as an iridium complex or a platinum complex, an aluminum quinolinol complex, a benzoquinolinol beryllium complex, or a benzoxazolyl Zinc complex, benzothiazole zinc complex, azomethylzinc complex, porphyrin zinc complex, europium complex, etc., which has a rare earth metal such as Al, Zn, Be or Tb, Eu, Dy, etc. as the central metal, and oxazi There are metal complexes having azole, thiadiazole, phenylpyridine, phenylbenzimidazole, quinoline structures, and the like.

Polymeric materials Examples of the polymeric material of the light emitting functional layer 21 include polyparaphenylene vinylene derivatives, polythiophene derivatives, polyparaphenylene derivatives, polysilane derivatives, polyacetylene derivatives, polyfluorene derivatives, polyvinyl carbazole derivatives, and the above-described dye bodies and metal complexes. There are polymerized light emitting materials.
Among the high molecular weight materials, materials that emit blue light include distyrylarylene derivatives, oxadiazole derivatives and polymers thereof, polyvinylcarbazole derivatives, polyparaphenylene derivatives, and polyfluorene derivatives.

Examples of materials that emit green light include quinacrine derivatives, coumarin derivatives, and polymers thereof, polyparaphenylene vinylene derivatives, and polyfluorene derivatives.
Examples of materials that emit red light include coumarin derivatives, thiophene ring compounds, and polymers thereof, polyparaphenylene vinylene derivatives, polythiophene derivatives, and polyfluorene derivatives.

Dopant material A dopant can be added to the light emitting functional layer for the purpose of improving the light emission efficiency and changing the light emission wavelength. Examples of such isopantos include perylene derivatives, coumarin derivatives, rubrene derivatives, quinacudrine derivatives, squalium derivatives, porphyrin derivatives, styryl dyes, tetracene derivatives, pyrazolone derivatives, decacyclene, phenoxazone, and the like. The thickness of the light emitting functional layer is usually about 2 to 200 nm.
As a method of forming the light emitting functional layer, there is a method of forming a film from a solution containing an organic light emitting material. The solvent used for film formation from a solution is not particularly limited as long as it dissolves an organic light emitting material, and a solvent used for film formation of a hole injection layer can be used. Moreover, as a film-forming method from a solution, the coating method similar to the hole injection layer mentioned above can be used.

(Layer provided between the electrode and the light emitting functional layer)
Examples of the layer provided between the electrode 22 (cathode) and the light emitting functional layer 21 as needed include an electron injection layer, an electron transport layer, a hole blocking layer, and the like. When both the electron injection layer and the electron transport layer are provided between the electrode 22 and the light emitting functional layer 21, the layer in contact with the electrode 22 is referred to as an electron injection layer, and the layers excluding the electron injection layer are referred to as an electron transport layer. That's it.
The electron injection layer is a layer having a function of improving the electron injection efficiency from the electrode 22. The electron transport layer is a layer having a function of improving electron injection from the electrode 22, the electron injection layer, or a layer closer to the electrode 22. The hole blocking layer is a layer having a function of stopping hole transport. In the case where at least one of the electron injection layer and the electron transport layer has a function of stopping the transport of holes, at least one of the electron injection layer and the electron transport layer may also serve as the hole blocking layer.

(Electron transport layer)
A known electron transport material can be used as the electron transport material constituting the electron transport layer. Specifically, as an electron transport material, an oxadiazole derivative, anthraquinodimethane or a derivative thereof, benzoquinone or a derivative thereof, naphthoquinone or a derivative thereof, anthraquinone or a derivative thereof, tetracyanoanthraquinodimethane or a derivative thereof, fluorenone or There are derivatives thereof, diphenyldicyanoethylene or derivatives thereof, diphenoquinone derivatives, or metal complexes of 8-hydroxyquinoline or derivatives thereof, polyquinoline or derivatives thereof, polyquinoxaline or derivatives thereof, and polyfluorene or derivatives thereof.

  Among these, as an electron transport material, an oxadiazole derivative, benzoquinone or a derivative thereof, anthraquinone or a derivative thereof, a metal complex of 8-hydroxyquinoline or a derivative thereof, polyquinoline or a derivative thereof, polyquinoxaline or a derivative thereof, polyfluorene or Its derivatives are preferred, 2- (4-biphenylyl) -5- (4-t-butylphenyl) -1,3,4-oxadiazole, benzoquinone, anthraquinone, tris (8-quinolinol) aluminum and polyquinoline are more preferred. .

  The method for forming the electron transport layer is not particularly limited, but for a low molecular electron transport material, there is a method of forming a film from a mixed solution containing a polymer binder and an electron transport material. As a high-molecular electron transport material, there is a method of forming a film from a solution containing an electron transport material. The solvent used for film formation from a solution is not particularly limited as long as it dissolves an electron transport material, and a solvent used as a solvent for a hole injection layer can be used. As a film forming method from a solution, there is a coating method similar to the above-described film forming method of the hole injection layer.

  The thickness of the electron transport layer varies depending on the material used, and can be changed as appropriate according to the intended design. The electron transport layer needs to have a thickness that does not generate at least pinholes. The film thickness at which no pinholes are generated is, for example, preferably about 1 to 1000 nm, more preferably 2 to 500 nm, and still more preferably 5 to 200 nm.

(Electron injection layer)
As a material constituting the electron injection layer, an optimum material is appropriately selected according to the type of the light emitting functional layer. Examples of the material of the electron injection layer include alkali metals, alkaline earth metals, alloys containing at least one of alkali metals and alkaline earth metals, alkali metal or alkaline earth metal oxides, halides, and carbonates. Or a mixture of these substances.

  Examples of alkali metals, alkali metal oxides, halides, and carbonates include lithium, sodium, potassium, rubidium, cesium, lithium oxide, lithium fluoride, sodium oxide, sodium fluoride, potassium oxide, potassium fluoride , Rubidium oxide, rubudium fluoride, cesium oxide, cesium fluoride, lithium carbonate, and the like. Examples of alkaline earth metals, alkaline earth metal oxides, halides, and carbonates include magnesium, calcium, barium, strontium, magnesium oxide, magnesium fluoride, calcium oxide, calcium fluoride, and barium oxide. , Barium fluoride, strontium oxide, strontium fluoride, magnesium carbonate, and the like. The electron injection layer may be composed of a laminate in which two or more layers are laminated, and may have a two-layer structure such as lithium fluoride / calcium. The electron injection layer is formed by various deposition methods, sputtering methods, various coating methods, and the like. The thickness of the electron injection layer is preferably about 1 to 1000 nm.

(electrode)
The material of the electrode 22 is preferably at least one of a material having a small work function and easy electron injection into the light emitting functional layer, a material having a high electrical conductivity, and a material having a high visible light reflectance. Specific examples of the material of the electrode 22 include metals, metal oxides, alloys, graphite, graphite intercalation compounds, and inorganic semiconductors such as zinc oxide.

  As the metal, an alkali metal, an alkaline earth metal, a transition metal, a Group III-b metal, or the like can be used. Specific examples of these metals include lithium, sodium, potassium, rubidium, cesium, beryllium, magnesium, calcium, strontium, barium, gold, silver, platinum, copper, manganese, titanium, cobalt, nickel, tungsten, tin, Examples include aluminum, scandium, vanadium, zinc, yttrium, indium, cerium, samarium, europium, terbium, and ytterbium.

  Moreover, as an alloy, the alloy containing at least 1 type of the said metal can be used. Specifically, magnesium-silver alloy, magnesium-indium alloy, magnesium-aluminum alloy, indium-silver alloy, lithium-aluminum alloy, lithium-magnesium alloy, lithium-indium alloy, calcium-aluminum alloy and the like are used.

The electrode 22 is configured as a transparent electrode as necessary. Examples of the material of the electrode 22 include conductive oxides such as indium oxide, zinc oxide, tin oxide, ITO, and IZO, and conductive organic substances such as polyaniline or a derivative thereof, polythiophene or a derivative thereof.
The electrode 22 may have a laminated structure of two or more layers. In addition, an electron injection layer may be used as the electrode 22. The film thickness of the electrode 22 can be appropriately selected in consideration of electric conductivity and durability, but is, for example, 10 to 10000 nm, preferably 20 to 1000 nm, and more preferably 50 to 500 nm. is there.

(Sealing structure)
In the sealing structure of the first embodiment, the adhesive layer 23 is formed on the side surface and the upper surface of the transparent electrode 14, the light emitting functional layer 21, and the electrode 22, and the sealing substrate 24 is pasted on the adhesive layer 23 on the upper surface of the electrode 22. Composed by combining.
As the adhesive layer 23, a thermosetting adhesive layer can be used, but in view of the influence on the material constituting the organic EL, a photocurable adhesive is preferable. Examples of the photocurable adhesive include radical adhesives using resins such as various acrylates such as ester acrylate, urethane acrylate, epoxy acrylate, melamine acrylate, and acrylic resin acrylate, and urethane polyester, and epoxy and vinyl ether. There are cationic adhesives using resins and thiol / ene addition type resin adhesives. Among such adhesives, as the adhesive used for the adhesive layer 23, a cationic adhesive that is not inhibited by oxygen and that undergoes a polymerization reaction even after light irradiation is preferable.

The cationic curable adhesive used for the adhesive layer 23 is preferably an ultraviolet curable epoxy resin adhesive, and is cured within 10 to 90 seconds when irradiated with ultraviolet rays of 100 mW / cm ² or more. An ultraviolet curable adhesive is particularly preferred. By curing the adhesive within 10 to 90 seconds, the adhesive can be sufficiently cured and appropriate adhesive strength can be obtained while eliminating the influence on other components due to ultraviolet irradiation.

  Moreover, it is preferable to harden the adhesive within 10 to 90 seconds from the viewpoint of the efficiency of the production process for producing the light emitting device 1. Further, the adhesive preferably has a low moisture permeability and a high adhesiveness regardless of the type. As an example of a method for forming the adhesive layer 23 on the contact surface with the sealing substrate 24, a dispensing method, an extrusion laminating method, a melting / hot melt method, a calendar method, a nozzle coating method, a screen printing method, a vacuum laminating method, and a heat There is a roll laminating method. Although there is no restriction | limiting in particular as the thickness of the contact bonding layer 23, A thing with a thin film is preferable, Preferably it is 1-100 micrometers, Especially preferably, it is 5-50 micrometers.

  When the light emitting device 1 is a top emission type organic EL element, the sealing substrate 24 needs to be transparent. In such a case, glass, polyethylene terephthalate (PET), polyethersulfone (PES), polyethylene naphthalate (PEN), etc., and a plastic film can be used for the sealing substrate 24. In addition, when the light emitting device 1 is a bottom emission type organic EL element that does not particularly require transparency, in addition to the above materials, the sealing substrate 24 is made of a metal material such as stainless steel or aluminum, opaque glass, or plastic. A material or a base material bonded to PET and aluminum foil via an adhesive, such as Alpet, can also be used.

The light emitting device according to the first embodiment configured as an organic EL element has the above-described configuration. Such an organic EL element can be used for a self-luminous display, a liquid crystal display and an advertising medium backlight, illumination, and the like.
Further, the light emitting device according to the first embodiment described above is not limited to the configuration in which the antireflection layer 120 including the antireflection thin wires 12 arranged in a stripe shape is provided.

FIG. 3 is a top view for showing another antireflection layer 150. The antireflection layer 150 includes, for example, a plurality of antireflection thin wires 151 made of a conductive material or an insulating material whose length in the y direction is longer than the length in the x direction and the length in the x direction in the y direction when viewed from above. A plurality of antireflection thin wires 152 made of a conductive material or an insulating material having a shape longer than the length of the antireflection thin wires 151 and the antireflection thin wires 152 are arranged so as to be orthogonal to each other. As shown in FIG. 3, the antireflection layer 150 has a lattice shape in a top view.
In the third embodiment, the length in the x direction of the antireflection thin wire 151 is referred to as a width, and the length in the y direction of the antireflection thin wire 152 is referred to as a width.

(Method for manufacturing light emitting device)
Next, a method for manufacturing the light emitting device 1 of the first embodiment described above will be described. The manufacturing method of the light-emitting device 1 of 1st Embodiment is related with the manufacturing method of the transparent electrode 10 of a light-emitting device especially. In the manufacturing method of the transparent electrode 10 of 1st Embodiment, on the transparent base material 11, the antireflection layer 120, the conductive layer 13, and the transparent conductive layer 14 are produced and manufactured in this order from the transparent base material 11 side. .

FIGS. 4-1 (a), (b), (c) and FIGS. 4-2 (d), (e) are views for explaining a method for manufacturing the light emitting device of the first embodiment. As shown in FIG. 4A, in the first embodiment, first, the antireflection film 122 for forming the antireflection layer 120 on the transparent substrate 11 and the conductivity for forming the conductive layer 13 are used. A film 132 is formed.
The method for forming the antireflection film 122 and the conductive film 132 is not particularly limited, and for example, a resistance heating vapor deposition method, an electron beam vapor deposition method, a sputtering method, or a lamination method in which a metal thin film is thermally compressed can be used. . The antireflection film 122 and the conductive film 132 are patterned by an etching method using a photoresist, so that the antireflection thin wire 12 and the conductive layer 13 shown in FIG.

In the first embodiment, the antireflection thin wire 12 and the conductive layer 13 can be formed from a solution. The solvent of the solution for forming the antireflection thin wire 12 is not particularly limited as long as it dissolves the material that becomes the antireflection thin wire 12 and the conductive layer 13.
As a method of forming the antireflection fine wire 12 and the conductive layer 13 from a solution, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, There are coating methods such as spray coating, screen printing, flexographic printing, offset printing, slit coating, ink jet printing, and nozzle printing. Of these methods, a film forming method capable of directly forming the pattern of the antireflection thin wire 12 and the conductive layer 13 is preferable. A film forming method can be selected as appropriate, but a printing method such as a screen printing method, a flexographic printing method, and an offset printing method, and a coating method by ejection such as an inkjet printing method and a nozzle printing method are preferable. The formed film is then dried and solidified to become the antireflection fine wire 12 and the conductive layer 13.

  Next, in the first embodiment, a coating conductive material is applied to the formation region of the transparent electrode 14 to form a transparent conductive layer. At this time, a transparent conductive layer is formed so that the area | region where the sealing adhesive of the sealing base material (it mentions later for details) bonded with a transparent base material is formed may be excluded. Film formation methods include spin coating, casting, micro gravure coating, gravure coating, bar coating, roll coating, wire bar coating, dip coating, spray coating, screen printing, flexographic printing. Application methods such as an offset printing method, a slit coating method, an ink jet printing method, and a nozzle printing method can be used. In particular, since the transparent electrode forming region is formed over the entire surface, a uniform coating method is preferable, and can be selected as appropriate. A spin coating method, a bar coating method, a wire bar coating method, a dip coating can be used. A coating method such as a method, a spray coating method, a slit coating method, a casting method, a micro gravure coating method, a gravure coating method, or a roll coating method is suitable.

  Next, the transparent base material 11 on which the coating conductive material is coated on the entire surface of the transparent electrode forming region is heat-treated in a drying chamber at a temperature condition of, for example, 100 ° C. or higher. Thereby, the solvent contained in the coating conductive material solution is vaporized, and the coating conductive material is fixed on the transparent base material 11 and the antireflection thin wire 12 to form the transparent conductive layer 14. FIG. 4C shows a state where the transparent electrode 10 including the transparent conductive layer 14 is formed.

  Further, in the first embodiment, as shown in FIG. 4D, the light emitting functional layer 21 and the electrode 22 are formed on the transparent electrode 14. The light emitting functional layer 21 can also be formed by a method of applying and forming a solution for forming the light emitting functional layer 21. The electrode 22 can be realized by any method such as film formation by coating, sputtering, or CVD (chemical vapor deposition).

Next, in 1st Embodiment, as shown to FIG.4-2 (e), the contact bonding layer 23 is apply | coated so that the transparent electrode 10, the light emission functional layer 21, and the electrode 22 may be covered. And the sealing base material 24 is bonded together on the contact bonding layer 23, and it seals.
According to the first embodiment described above, since the antireflection layer 120 is provided between the conductive layer 13 and the transparent base material 11, the conductive layer 13 is formed when the light emitting device is viewed from the transparent base material 11 side. It becomes difficult to see. For this reason, the light emitting device of the first embodiment has high transparency and can realize a high-quality display.

[Second Embodiment]
Next, a second embodiment of the present invention will be described. The light emitting device 2 of the second embodiment is configured as an organic EL element. The second embodiment is different from the second embodiment in the shapes of the antireflection thin wires 52 and the conductive layer 53 in the transparent electrode 50, and the other members are configured in the same manner. In the second embodiment, the same components as those in the first embodiment are denoted by the same reference numerals, and the description thereof is partially omitted.

(Antireflection thin wire)
FIGS. 5A and 5B are views for explaining the light emitting device 2 of the second embodiment. 5A is a cross-sectional view of the light emitting device 2 along the x-axis, and FIG. 5B is an enlarged view of the antireflection thin wire 52 and the conductive layer 53 shown in FIG. As shown in FIG. 5B, here, the two side surfaces of the antireflection thin wire 52 facing each other in the x direction are referred to as a side surface 52b and a side surface 52d, respectively. The surface of the antireflection thin wire 52 that contacts the transparent substrate 11 is a bottom surface 52a, and the back surface of the bottom surface 52a is a top surface 52c.

As shown in FIG. 5B, the two side surfaces facing the x direction of the conductive layer 53 are defined as a side surface 53b and a side surface 53d, respectively. The surface of the conductive layer 53 that contacts the transparent substrate 11 is a bottom surface 53a, and the back surface with respect to the bottom surface 53a is a top surface 53c.
As shown in FIGS. 5A and 5B, the antireflection thin wire 52 and the conductive layer 53 provided in the light emitting device 2 of the second embodiment both have a trapezoidal cross section. The width L2 of the bottom surface 53a of the conductive layer 53 is shorter than the width L1 of the bottom surface 52a of the antireflection thin wire 52. With such a configuration, when viewed from the transparent base material 11 side, the light emitting device 2 according to the second embodiment ensures that the bottom surface 52a of the antireflection thin wire 52 hides the bottom surface 53a of the conductive layer 53, and thus the conductive It is possible to make the layer 53 less visible from the transparent substrate 11 side.

That is, in the second embodiment, the cross-sectional shapes of the antireflection thin wire 52 and the conductive layer 53 are trapezoidal, and both are formed so that the side surfaces facing the x direction are tapered.
Specifically, as shown in FIG. 5B, in the cross section along the x-axis of the antireflection thin wire 52, the angle formed by the bottom surface 52a and the side surface 52b is defined as a lower base angle θ1. In addition, an angle formed by the upper surface 52c and the side surface 52d is an upper base angle θ2. In the second embodiment, in the cross section along the x-axis of the conductive layer 53, the angle formed by the bottom surface 53a and the side surface 53b is the lower base angle θ3. In addition, an angle formed by the upper surface 53c and the side surface 53d is an upper base angle θ4.

In the second embodiment, the lower base angle θ1 is preferably 90 ° or less, and the upper base angle θ2 is preferably 90 ° or more. The lower base angle θ3 of the conductive layer 53 is preferably 90 ° or less, and the upper base angle θ4 is preferably 90 ° or more.
Also in the second embodiment, the antireflection thin wire 52 preferably has a low reflectance of 10% or less, and in the case of a single layer structure, a photopolymerization material is used. As a specific example of the antireflection layer of the photopolymerization material, a low reflection material such as a resin black matrix (BM) using carbon black used as a color filter for a liquid crystal display is preferable. Further, a general anti-glare (AG) structure may be used. In the case of a multilayer structure, the antireflection layer 520 may have a general anti-reflection (AR) structure.

In the second embodiment, the method for forming the film to be the antireflection thin wire 52 is not particularly limited. For example, a resistance heating vapor deposition method, an electron beam vapor deposition method, a sputtering method, or a laminate that thermally compresses a metal thin film. It is conceivable to form a film using a method or the like and pattern the film by an etching method using a photoresist.
At this time, in the second embodiment, the antireflection thin wire 52 having a trapezoidal cross section can be formed by over-etching the film that becomes the antireflection thin wire 52 during etching.

(Conductive layer)
Similar to the first embodiment, the conductive layer 53 of the second embodiment is formed on the antireflection thin wire 52. For this reason, the conductive layer 53 also has a linear shape that is longer in the y direction than in the x direction, like the antireflection thin wire 52. The plurality of conductive layers 53 are arranged in parallel in one direction to form a stripe shape. The material of the conductive layer 53 is preferably low in electrical resistance, and a material having an electrical conductivity of 10 ⁷ S / cm or more is used. As a specific example of the conductive material, any one of metals such as aluminum, silver, chromium, gold, copper, tantalum, and molybdenum, or an alloy thereof can be used. Among these materials, it is preferable to use aluminum, chromium, copper, silver, and alloys thereof from the viewpoint of high electrical conductivity and easy material handling.

The height (thickness) of the conductive layer 53 is preferably 0.05 μm or more and 10 μm or less, more preferably 0.1 μm or more and 1 μm or less. The relationship between the width and height of each conductive layer 53 may be determined according to the desired conductivity. The conductive layer 53 may be composed of only the same conductive layer, or may be composed of a combination of different conductive layers.
In the second embodiment, the antireflection thin wire 52 and the conductive layer 53 can be formed from a solution. The solvent of the solution for forming the antireflection thin wire 52 is not particularly limited as long as it dissolves the material that becomes the antireflection thin wire 52 and the conductive layer 53.

  As a method of forming the antireflection fine wire 52 and the conductive layer 53 from a solution, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, There are coating methods such as spray coating, screen printing, flexographic printing, offset printing, slit coating, ink jet printing, and nozzle printing. Of these methods, a film forming method capable of directly forming the pattern of the antireflection thin wire 52 and the conductive layer 53 is preferable. A film forming method can be selected as appropriate, but a printing method such as a screen printing method, a flexographic printing method, and an offset printing method, and a coating method by ejection such as an inkjet printing method and a nozzle printing method are preferable. Thereafter, the formed film is dried and solidified to become the antireflection thin wire 52 or the conductive layer 53.

At this time, in the second embodiment, the antireflection fine wire 52 and the conductive layer 53 having a trapezoidal cross section can be formed by applying a solution used for printing in multiple layers. That is, in the second embodiment, in applying the solution, the solution is applied a plurality of times and a plurality of films are formed. At this time, in the second embodiment, the widths of the plurality of films are narrowed in order from the lower film toward the upper film.
According to the second embodiment described above, the taper is formed on both sides of the antireflection fine wire 52 and the conductive layer 53, thereby maintaining the effect obtained in the first embodiment and covering the transparent conductive film. And the concentration of current on the edge portion of the conductive layer 53 can be reduced, and the light emission characteristics can be improved.

[Third Embodiment]
Next, a third embodiment of the present invention will be described. The light emitting device 3 of the third embodiment is configured as an organic EL element. The third embodiment is different from the first and second embodiments in the shapes of the antireflection thin wires 62 and the conductive layer 63 in the transparent electrode 60, and the other members are configured in the same manner. In the third embodiment, the same components as those in the first embodiment and the second embodiment are denoted by the same reference numerals, and the description thereof is partially omitted.

(Antireflection member)
FIGS. 6A and 6B are views for explaining the light emitting device 3 according to the third embodiment. 6A is a cross-sectional view of the light emitting device 3 along the x-axis, and FIG. 6B is an enlarged view of the antireflection thin wire 62 and the conductive layer 63 shown in FIG. As shown in FIG. 6B, here, the back surface of the antireflection thin wire 62 with respect to the bottom surface 62a in contact with the transparent base material 11 is defined as an upper surface 62c. Further, a surface in contact with the upper surface 62c of the conductive layer 63 is a bottom surface 63a, and a back surface with respect to the bottom surface 63a is an upper surface 63c. One side surface following the upper surface 63c is defined as a side surface 63d. An angle formed by the upper surface 63c and the side surface 63d is an upper base angle θ5.
The light emitting device 3 of the third embodiment is the second embodiment in that the width of the bottom surface 63a of the conductive layer 63 formed on the antireflection thin wire 62 is wider than the width of the upper surface 62c of the antireflection thin wire 62. It differs from the form.

  As shown in FIGS. 6A and 6B, each of the antireflection thin wire 62 and the conductive layer 63 included in the light emitting device 3 of the third embodiment has a trapezoidal cross section. In the third embodiment, as shown in FIG. 6B, the upper base angle θ5 of the conductive layer 63 is preferably 90 ° or more. In the third embodiment, the width L4 of the bottom surface 63a of the conductive layer 63 is shorter than the width L3 of the bottom surface 62a of the antireflection thin wire 52. With this configuration, in the light emitting device 3 according to the third embodiment, the bottom surface 62a of the antireflection thin wire 62 reliably hides the bottom surface 63a of the conductive layer 63 when viewed from the transparent base material 11 side. The layer 63 can be made more difficult to visually recognize from the transparent substrate 11 side.

  The antireflection thin wire 62 of the third embodiment preferably has a low reflectance of 10% or less, and in the case of a single layer structure, a photopolymerizable material is used. As a specific example of the antireflection layer of the photopolymerization material, a low reflection material such as a resin black matrix (BM) using carbon black used as a color filter for a liquid crystal display is preferable. Further, a general anti-glare (AG) structure may be used. In the case of a multilayer structure, the antireflection layer 520 may have a general anti-reflection (AR) structure.

Further, the conductive layer 63 of the third embodiment is formed on the antireflection thin wire 62. Therefore, the conductive layer 63 also has a linear shape that is long in the x direction, like the antireflection thin wire 62. The plurality of conductive layers 63 are arranged in parallel in one direction to form a stripe shape. The material of the conductive layer 63 is preferably low in electrical resistance, and a material having an electrical conductivity of 10 ⁷ S / cm or more is used. As a specific example of the conductive material, any one of metals such as aluminum, silver, chromium, gold, copper, tantalum, and molybdenum, or an alloy thereof can be used. Among these materials, it is preferable to use aluminum, chromium, copper, silver, and alloys thereof from the viewpoint of high electrical conductivity and easy material handling.

In the third embodiment, there is no particular limitation on the method for forming the film to be the antireflection thin wire 62 and the conductive layer 63. For example, a resistance heating vapor deposition method, an electron beam vapor deposition method, a sputtering method, or a metal thin film is used. It is conceivable to form a film using a laminating method or the like that is thermally compressed, and pattern the film by an etching method using a photoresist.
At this time, also in the third embodiment, the antireflection thin wire 62 having a trapezoidal cross section can be formed by over-etching the film that becomes the antireflection thin wire 62 and the conductive layer 63 during etching.

In the third embodiment, the antireflection thin wire 62 and the conductive layer 63 can be formed from a solution. The solvent of the solution for forming the antireflection thin wire 62 is not particularly limited as long as it dissolves the material that becomes the antireflection thin wire 62 and the conductive layer 63.
As a method of forming the antireflection fine wire 62 and the conductive layer 63 from a solution, a spin coating method, a casting method, a micro gravure coating method, a gravure coating method, a bar coating method, a roll coating method, a wire bar coating method, a dip coating method, There are coating methods such as spray coating, screen printing, flexographic printing, offset printing, slit coating, ink jet printing, and nozzle printing. Of these methods, a film forming method capable of directly forming the pattern of the antireflection thin wire 62 and the conductive layer 63 is preferable. A film forming method can be selected as appropriate, but a printing method such as a screen printing method, a flexographic printing method, and an offset printing method, and a coating method by ejection such as an inkjet printing method and a nozzle printing method are preferable. The formed film is then dried and solidified to become the antireflection fine wire 62 or the conductive layer 63.

  At this time, in the third embodiment, the antireflection fine wire 62 and the conductive layer 63 having a trapezoidal cross section can be formed by applying a solution used for printing in multiple layers. That is, in the third embodiment, in applying the solution, the solution is applied a plurality of times and a plurality of films are formed. At this time, in the third embodiment, the widths of the plurality of films are made narrower in order from the lower film to the upper film.

  In the description of the first to third embodiments described above, the drawings are schematic, and the relationship between the thickness and the planar dimensions, the ratio of the thickness of each layer, and the like are different from the actual ones. It should be noted. Therefore, specific thicknesses and dimensions should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

  The first to third embodiments described above exemplify apparatuses and methods for embodying the technical idea of the present invention, and the technical idea of the present invention is the material of the component parts. The shape, structure, arrangement, etc. are not specified as follows. The technical idea of the present invention can be variously modified within the technical scope defined by the claims described in the claims.

1, 2, 3 Light emitting device 10, 50, 60 Transparent electrode, 11 Transparent base material 12, 15, 52, 62 Antireflection thin wire, 13, 53, 63 Conductive layer 14 Transparent electrode, 21 Light emitting functional layer, 22 Electrode 23 Adhesive layer 24 Sealing substrate, 120, 150 Antireflection layer

Claims (14)

A transparent substrate;
An antireflection layer formed on one surface of the transparent base material and made of a conductive material or an insulating material;
At least a conductive layer, a transparent conductive layer, a light emitting functional layer, and an electrode are laminated in this order on the side of the antireflection layer of the transparent base material.   The light emitting device according to claim 1, wherein the surface of the antireflection layer has a smooth shape or an uneven shape.   The antireflection layer includes a plurality of antireflection thin wires having a shape in which the length in the first direction is longer than the length in the second direction orthogonal to the first direction when viewed from above, and a plurality of the antireflection thin wires The light emitting device according to claim 1, wherein the light emitting devices are arranged in parallel in one direction to form a stripe shape.   The antireflection layer includes an antireflection thin wire having a shape in which the length in the first direction is longer than the length in the second direction orthogonal to the first direction and the length in the second direction when viewed from above. Includes a plurality of antireflection thin wires having a shape longer than the length in the first direction, the antireflection thin wires having a length in the first direction longer than the length in the second direction, and the second 3. The light emitting device according to claim 1, wherein the antireflection thin wires whose length in the direction is longer than the length in the first direction are arranged so as to be orthogonal to each other to form a lattice shape.   5. The light emitting device according to claim 3, wherein a width of a surface of the conductive layer in contact with the antireflection thin wire is equal to or less than a width of a surface of the antireflection thin wire in contact with the transparent base material.   6. The light emitting device according to claim 3, wherein a width of a surface of the antireflection thin wire in contact with the transparent substrate is 0.1 μm or more and 1000 μm or less.   The light-emitting device according to claim 1, wherein the antireflection layer has a single-layer structure or a laminated structure. Forming an antireflection layer made of a conductive material or an insulating material on one surface of the transparent substrate;
And a step of laminating at least a conductive layer, a transparent conductive layer, a light emitting functional layer and an electrode in this order on the side of the antireflection layer of the transparent base material.   The method of manufacturing a light emitting device according to claim 8, wherein the antireflection layer has a smooth shape or an uneven shape.   The antireflection layer includes a plurality of antireflection thin wires having a shape in which the length in the first direction is longer than the length in the second direction orthogonal to the first direction when viewed from above, and a plurality of the antireflection thin wires The light emitting device manufacturing method according to claim 8, wherein the light emitting devices are arranged in parallel in one direction to form a stripe shape.   The antireflection layer includes an antireflection thin wire having a shape in which the length in the first direction is longer than the length in the second direction orthogonal to the first direction and the length in the second direction when viewed from above. Includes a plurality of antireflection thin wires having a shape longer than the length in the first direction, the antireflection thin wires having a length in the first direction longer than the length in the second direction, and the second The light-emitting device according to claim 8 or 9, wherein the antireflection thin wires having a length in a direction longer than the length in the first direction are arranged so as to be orthogonal to each other to form a lattice shape. Method.   12. The method of manufacturing a light emitting device according to claim 10, wherein a width of a surface of the conductive layer in contact with the antireflection thin wire is equal to or less than a width of a surface of the antireflection thin wire in contact with the transparent substrate. .   13. The method of manufacturing a light emitting device according to claim 10, wherein a width of a surface of the antireflection thin wire contacting the transparent substrate is 0.1 μm or more and 1000 μm or less.   The method for manufacturing a light emitting device according to claim 8, wherein the antireflection layer has a single layer structure or a laminated structure.

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