JP2016157726A - Manufacturing device and manufacturing method of impurity semiconductor layer - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a manufacturing device and a manufacturing method of an impurity semiconductor layer, which can easily manufacture an impurity semiconductor layer in a simple manufacturing process under the atmosphere.SOLUTION: An impurity semiconductor layer manufacturing device 11 comprises: an accumulation part 12 where either one of a p-type impurity ion or an n-type impurity ion and an electrolyte 13 containing a semiconductor ion are accumulated; a working electrode 14 immersed in the electrolyte 13 in the accumulation part 12; a counter electrode 15 arranged opposite to the working electrode 14; and a controlled-potential electrolysis part 17 which causes a current to flow between the working electrode 14 and the counter electrode 15 and causes p-type or n-type impurity semiconductor to be electrolytically deposited on a surface of the electrode layer 2 of the working electrode 14 to form an impurity semiconductor layer on the surface of the electrode layer 2. Only by flowing a current between the working electrode 14 and the counter electrode 15, the impurity semiconductor can be electrolytically deposited on the surface of the electrode layer 2 to form the impurity semiconductor layer by reduction reaction of the p-type impurity ion or the n-type impurity ion which is contained in the electrolyte 13 with the semiconductor ion.SELECTED DRAWING: Figure 2

Description

  The present invention relates to an impurity semiconductor layer manufacturing apparatus and manufacturing method.

  As a manufacturing method for manufacturing an impurity semiconductor layer in which a p-type impurity or an n-type impurity is added to a semiconductor film, for example, a p-type impurity such as boron or arsenic is formed on a semiconductor film such as silicon formed on a substrate. An ion implantation method is known in which n-type impurities such as those are ionized and implanted.

  For example, in a manufacturing method for manufacturing an impurity semiconductor layer by an ion implantation method disclosed in Patent Document 1, first, an ion source gas and electrons emitted from a cathode filament are collided to enter an ion source chamber. A plurality of types of ions are generated, and a plurality of ions are extracted from the ion source chamber by the extraction electrode to generate an ion beam.

  Next, in this conventional manufacturing method, a plurality of types of ions contained in the ion beam are separated into a single type of ions by mass separation, and the ions are accelerated by an accelerator, and then focused by a quadrupole lens. Irradiate the semiconductor film installed in the vacuum chamber. In this way, the conventional manufacturing method can manufacture an impurity semiconductor layer in which p-type impurities or n-type impurities are ion-implanted into the semiconductor film.

JP 2006-19048 A

  However, in such a conventional manufacturing method, when manufacturing an impurity semiconductor layer in which a p-type impurity or an n-type impurity is added to the semiconductor film, ions are directly implanted into the semiconductor film. There is a problem that the inside of the vacuum chamber to be maintained must be maintained in a high vacuum state, and the manufacturing process is complicated.

  Therefore, the present invention has been made in view of the above problems, and provides an impurity semiconductor layer manufacturing apparatus and a manufacturing method that can easily manufacture an impurity semiconductor layer by a simple manufacturing process in an air atmosphere. For the purpose.

  An apparatus for manufacturing an impurity semiconductor layer according to the present invention includes a storage part in which an electrolytic solution containing either p-type impurity ions or n-type impurity ions and semiconductor ions is stored, and the electrolytic solution in the storage part. A working electrode immersed in the storage portion, a counter electrode immersed in the electrolytic solution in the reservoir, and disposed opposite to the working electrode, and passing a current between the working electrode and the counter electrode, and the working electrode And a constant-potential electrolysis unit for electrolytically depositing a p-type or n-type impurity semiconductor on the surface of the electrode layer and forming the impurity semiconductor layer on the surface of the electrode layer.

  In the method of manufacturing an impurity semiconductor layer according to the present invention, the electrolytic solution is immersed in a storage part in which an electrolytic solution containing either p-type impurity ions or n-type impurity ions and semiconductor ions is stored. A working electrode and a counter electrode are arranged opposite to each other, and a current is passed between the working electrode and the counter electrode by a constant-potential electrolysis unit, and a p-type or n-type impurity semiconductor is formed on the electrode layer surface of the working electrode. An impurity semiconductor layer is formed on the surface of the electrode layer by electrolytic deposition.

  According to the present invention, the p-type impurity ions or the n-type impurity ions contained in the electrolytic solution and the semiconductor can be obtained by simply passing a current between the working electrode and the counter electrode immersed in the electrolytic solution in the reservoir. Due to the reduction reaction with ions, an impurity semiconductor can be electrolytically deposited on the surface of the electrode layer to form an impurity semiconductor layer, thus eliminating the need for a complicated manufacturing process for maintaining a vacuum state as in the prior art. The impurity semiconductor layer can be easily formed by this simple manufacturing process.

It is a schematic diagram which shows an impurity semiconductor element provided with the impurity semiconductor layer manufactured with the manufacturing method of this invention. It is the schematic which shows the manufacturing apparatus of this invention.

1. Configuration of Impurity Semiconductor Element In FIG. 1, reference numeral 1 denotes an impurity semiconductor element including an impurity semiconductor layer 3 manufactured by a manufacturing method according to the present invention. In this case, the impurity semiconductor element 1 is formed on the surface of the substrate 4 formed on the surface of the substrate 4, the layered electrode layer 2 provided on the surface of the substrate 4, for example. And an impurity semiconductor layer 3 having a predetermined pattern. The electrode layer 2 is formed of a metal such as Au or Cr, for example, and can function as an electrode of the manufacturing apparatus when it is installed in a manufacturing apparatus described later to form the impurity semiconductor layer 3. The impurity semiconductor layer 3 is composed of a plurality of impurity semiconductor portions 3 a disposed on the surface of the electrode layer 2.

  The plurality of impurity semiconductor portions 3a all have the same configuration, and are formed of an impurity semiconductor in which a semiconductor such as Si and a p-type impurity such as Al are mixed, and the outer shape is formed in a predetermined shape. ing. In the case of this embodiment, the impurity semiconductor portion 3a is formed in a columnar shape, for example, and its bottom surface is fixed to the surface of the electrode layer 2 so as to stand on the surface of the electrode layer 2 Has been placed. In the case of this embodiment, the impurity semiconductor layer 3 has a predetermined pattern in which the impurity semiconductor portions 3a adjacent to each other are regularly arranged at a predetermined interval. And the impurity semiconductor layer 3 which consists of such a some impurity semiconductor part 3a can be formed with the manufacturing apparatus mentioned later.

2. Next, the manufacturing apparatus of the present invention for forming the impurity semiconductor layer 3 on the surface of the electrode layer 2 will be described. As shown in FIG. 2, the manufacturing apparatus 11 of the present invention has a container-like storage part 12, and a predetermined amount of electrolytic solution 13 is stored in the storage part 12.

  In the storage part 12, the working electrode 14, the counter electrode 15, and the reference electrode 16 are arrange | positioned so that it can be immersed in the electrolyte solution 13. FIG. In this case, the counter electrode 15 is formed in a wire shape with a metal such as Pt, and is disposed opposite to the working electrode 14 in the reservoir 12. The reference electrode 16 is formed in a wire shape with a metal such as Pt or Ag, and is disposed between the working electrode 14 and the counter electrode 15.

  In the working electrode 14, a layered electrode layer 2 is formed on one surface of the substrate 4, and a photoresist layer 14 a having a predetermined pattern is disposed on the surface of the electrode layer 2. In the case of this embodiment, the photoresist layer 14a has a plurality of through holes 14b penetrating its thickness, and the electrode layer 2 is exposed to the outside in each through hole 14b.

  Incidentally, in the case of this embodiment, the photoresist layer 14a has a configuration in which all the through holes 14b have the same shape, and the adjacent through holes 14b are regularly arranged with a predetermined interval therebetween. Have. In the case of this embodiment, the through-hole 14b has a circular shape when the photoresist layer 14a is viewed from the surface, so that a cylindrical space can be formed in the photoresist layer 14a. Has been made.

  Incidentally, in such a working electrode 14, after the electrode layer 2 is formed on the substrate 4 by an electron beam evaporation method or the like, a photoresist layer 14a is formed on the electrode layer 2 by using a lithography technique such as a UV nanoimprint method. Can be produced. For example, when the UV nanoimprint method is used, first, an original plate is prepared in which cylindrical convex portions are regularly arranged on the surface at predetermined intervals. Next, after applying a photoresist on the surface of the electrode layer 2, the original plate is pressed against the electrode layer 2 until the tip of the convex portion of the original plate contacts the surface of the electrode layer 2. At this time, the space between the surface of the electrode layer 2 and the surface of the original plate is filled with the photoresist. Finally, the photoresist is irradiated with ultraviolet rays through the original plate to solidify the photoresist between the surface of the electrode layer 2 and the surface of the original plate, thereby forming a through-hole having a shape corresponding to the convex shape of the original plate. A photoresist layer 14a in which 14b is regularly arranged can be formed.

  In addition to this, the manufacturing apparatus 11 is provided with a constant potential electrolysis unit 17, a conductive wire 18 a connected to the electrode layer 2 of the working electrode 14, a conductive wire 18 b connected to the counter electrode 15, and a reference Conductive wires 18c connected to the electrodes 16 are connected to the constant potential electrolysis unit 17, respectively. The constant potential electrolysis unit 17 allows a current to flow between the working electrode 14 and the counter electrode 15 in the electrolytic solution 13 through the conducting wire 18a and the conducting wire 18b, and the working electrode 14 and the reference electrode through the conducting wire 18a and the conducting wire 18c. A potential difference between 16 and 16 can be measured. Thereby, the constant potential electrolysis unit 17 regards the potential difference between the working electrode 14 and the reference electrode 16 when the reference electrode 16 is used as a reference as the potential of the working electrode 14, so that the potential becomes a predetermined value. The current flowing between the working electrode 14 and the counter electrode 15 in the electrolytic solution 13 can be adjusted.

  Here, the electrolytic solution 13 in which the working electrode 14, the counter electrode 15, and the reference electrode 16 are immersed is, for example, when forming the p-type impurity semiconductor layer 3, semiconductor ions (Si ions) and p-type impurity ions (Al An electrolytic solution 13 in which ions are dissolved in an ionic liquid is used. As a result, a current flows between the working electrode 14 and the counter electrode 15 in the working electrode 14, so that the surface of the electrode layer 2 exposed to the electrolytic solution 13 in each through hole 14 b of the photoresist layer 14 a. In addition, the p-type impurity semiconductor in which the semiconductor and the p-type impurity are mixed can be electrolytically deposited by the reduction reaction of the semiconductor ions and the p-type impurity ions.

  Thus, in the working electrode 14, an impurity semiconductor portion 3a made of a p-type impurity semiconductor is formed for each through hole 14b of the photoresist layer 14a, and an impurity semiconductor in which the plurality of impurity semiconductor portions 3a are arranged at a predetermined interval. Layer 3 can be formed on the surface of electrode layer 2.

In the case of this embodiment, the electrolytic solution 13 is made of, for example, an ionic liquid such as trimethylhexylammonium-bis (trifluoromethanesulfonyl) imide (TMHA-TFSI), a semiconductor compound such as SiCl ₄ , and AlCl ₃ or the like. It can be produced by dissolving a p-type impurity compound. As a result, the electrolytic solution 13 can be ionized in the process in which the semiconductor compound and the p-type impurity compound are dissolved in the ionic liquid, and the semiconductor ion and the p-type impurity ion can be in a state of being present in the ionic liquid. Incidentally, by adjusting the amount of p-type impurity added to the ionic liquid, the content of the p-type impurity in the impurity semiconductor that is electrolytically deposited can be adjusted.

  Here, as the p-type impurity compound, for example, chlorinated, brominated, fluorinated or iodide Al, Ga, B, Tl can be applied. In this case, as the p-type impurity ions, Al ions, Ga ions are used. , B ions, and Tl ions can be contained in the electrolyte.

  Further, as the semiconductor compound, Si or Ge that is chlorinated, brominated, fluorinated, or iodide can be applied. In this case, Si ions and Ge ions can be contained in the electrolyte as semiconductor ions.

  Incidentally, in the above-described embodiment, the case where the p-type impurity compound is added to the ionic liquid as the solvent and the electrolytic solution 13 in which the p-type impurity ions are dissolved is applied is described. However, the present invention is not limited to this, and an electrolytic solution in which an n-type impurity compound is added to an ionic liquid and the n-type impurity ions are dissolved in the ionic liquid may be applied.

  When an electrolytic solution in which such n-type impurity ions are dissolved in an ionic liquid is used, an n-type impurity semiconductor is electrolytically deposited on the electrode layer 2 in each through hole 14b of the photoresist layer 14a. Thus, an n-type impurity semiconductor layer in which a plurality of impurity semiconductor portions made of an n-type impurity semiconductor are arranged at a predetermined interval can be formed on the surface of the electrode layer 2.

  Incidentally, in this case, as the n-type impurity compound, it is possible to apply P, Sb, Bi that is chlorinated, brominated, fluorinated, or iodide, and as a result, P ions, Sb ions, Bi ions can be contained in the electrolytic solution.

As in the embodiment described above, when TMHA-TFSI is applied as the ionic liquid, SiCl ₄ is applied as the semiconductor compound, and AlCl ₃ is applied as the p-type impurity compound, the TMHA-TFSI is It is preferable to mix SiCl ₄ at a concentration of 0.5M and AlCl ₃ at a concentration of 8.8 × 10 ⁻⁴ M.

3. Next, a manufacturing method for manufacturing the impurity semiconductor layer 3 using the manufacturing apparatus 11 described above will be described. In this case, the constant potential electrolysis unit 17 adjusts the current flowing between the working electrode 14 and the counter electrode 15 immersed in the electrolytic solution 13 in the storage unit 12, and sets the potential of the working electrode 14 to a negative predetermined value. . By maintaining the potential of the working electrode 14 for a predetermined time and reducing the semiconductor ions and p-type impurity ions on the surface of the electrode layer 2 exposed to the electrolytic solution 13 in the through hole 14b of the photoresist layer 14a, A p-type impurity semiconductor in which a semiconductor and a p-type impurity are mixed is electrolytically deposited. Thereby, in the manufacturing apparatus 11, the impurity semiconductor part 3a is formed for every through-hole 14b of the working electrode 14, and the impurity semiconductor layer 3 by which these several impurity semiconductor parts 3a are arrange | positioned by the predetermined pattern can be produced.

  In the case of the above-described embodiment, the potential of the working electrode 14 is set to −4 V or more and −1 V or less, and the potential of the working electrode 14 is maintained for 0.01 hour or more and 1 hour or less. Incidentally, the content of the p-type impurity in the impurity semiconductor layer 3 can be adjusted by adjusting the value of the potential of the working electrode 14.

  Next, after the working electrode 14 is taken out from the storage unit 12 of the manufacturing apparatus 11, the photoresist layer 14a of the working electrode 14 is removed by, for example, a plasma asher, so that a plurality of surfaces are formed on the surface of the electrode layer 2 on the substrate 4. The impurity semiconductor element 1 in which the impurity semiconductor layer 3 including the impurity semiconductor portion 3a is formed can be manufactured.

  In this embodiment, finally, the impurity semiconductor element 1 is placed in a vacuum or an inert gas such as Ar, and the impurity semiconductor element 1 is heated at 100 ° C. to 1500 ° C. for 0.1 hour or more. Heat treatment is performed. By such heat treatment, the crystallinity of the impurity semiconductor layer 3 in the impurity semiconductor element 1 can be improved, and the amount of C contained in the impurity semiconductor layer 3 can be reduced.

4). Operation and Effect In the above-described configuration, in the manufacturing apparatus 11 of the present invention, the storage unit 12 in which the electrolytic solution 13 containing p-type impurity ions and semiconductor ions is stored in the ionic liquid as the solvent, and the storage unit 12 A working electrode 14 and a counter electrode 15 which are immersed in the electrolytic solution 13 and arranged to face each other, and a constant-potential electrolysis unit 17 for passing a current between the working electrode 14 and the counter electrode 15 are provided.

  In this manufacturing apparatus 11, a current is passed by the constant potential electrolysis unit 17 between the working electrode 14 and the counter electrode 15 immersed in the electrolytic solution 13 to set the potential of the working electrode 14 to a predetermined value. By doing so, a p-type impurity semiconductor is electrolytically deposited on the surface of the electrode layer 2 exposed in each through-hole 14b of the photoresist layer 14a provided in the working electrode 14, and the electrode layer 2 The impurity semiconductor layer 3 can be formed on the surface.

  Thus, in the manufacturing apparatus 11 of the present invention, it is contained in the electrolytic solution 13 only by passing a current between the working electrode 14 immersed in the electrolytic solution 13 in the reservoir 12 and the counter electrode 15. The impurity semiconductor layer 3 can be formed by electrolytically depositing an impurity semiconductor on the surface of the electrode layer 2 by the reduction reaction between the p-type impurity ions and the semiconductor ions, and thus a complicated manufacturing process that maintains a vacuum state as in the prior art. A process becomes unnecessary, and the impurity semiconductor layer 3 can be easily formed by a simple manufacturing process in an air atmosphere.

  Further, in the manufacturing apparatus 11 of the present invention, a photoresist layer 14a in which a plurality of through holes 14b are formed in a predetermined pattern is provided on the surface of the electrode layer 2, and on the surface of the electrode layer 2 exposed in each through hole 14b, The impurity semiconductor portions 3a are formed by electrolytic deposition. Thereby, in the manufacturing apparatus 11 of this invention, the impurity semiconductor part 3a can be formed in the position corresponding to the through-hole 14b of the photoresist layer 14a, respectively, and these several impurity semiconductor parts 3a are arranged by the desired pattern The semiconductor layer 3 can be formed on the electrode layer 2.

  Therefore, in the manufacturing apparatus 11 of the present invention, a photoresist layer 14a having a plurality of through holes 14b is simply formed on the surface of the electrode layer 2 in accordance with a desired pattern of the impurity semiconductor layer 3 to be finally formed. Since the impurity semiconductor layer 3 having the impurity semiconductor portion 3a arranged in a desired pattern can be formed simply by placing the impurity semiconductor portion 3a, the impurity semiconductor layer 3 can be patterned simultaneously with the impurity semiconductor layer 3 formation step. The manufacturing process can be simplified as compared with the case where the layered impurity semiconductor layer is separately patterned by an etching technique after the layered impurity semiconductor layer is formed as in the prior art.

  Further, in this manufacturing apparatus 11, the impurity semiconductor portion 3a having a desired shape can be easily formed simply by changing the shape of the through hole 14b formed in the photoresist layer 14a.

5. Verification Test Next, the impurity semiconductor layer 3 was produced using the manufacturing apparatus 11 according to the present invention described above, and the characteristics of the produced impurity semiconductor layer were evaluated. In this verification test, an electrolytic solution 13 was prepared using SiCl ₄ as a semiconductor compound, AlCl ₃ as a p-type impurity compound, and TMHA-TFSI as a solvent. Specifically, SiCl ₄ and AlCl ₃ are dissolved in TMHA-TFSI at concentrations of 0.5M and 8.8 × 10 ⁻⁴ M, respectively, contain Si ions as semiconductor ions, and Al ions as p-type impurity ions The electrolyte solution 13 containing was produced.

  In this verification test, a plate-like substrate 4 made of quartz glass is prepared, and a Cr layer having a thickness of 0.01 μm and an Au layer having a thickness of 0.2 μm are sequentially laminated on the substrate 4 by electron beam evaporation. Thus, an electrode layer 2 was produced. Next, a photoresist layer 14 a in which through holes 14 b were formed in a predetermined pattern was formed on the surface of the electrode layer 2 by the UV nanoimprint method, and this was placed in the storage portion 12 as a working electrode 14.

  In this case, in the photoresist layer 14a, a plurality of through holes having a diameter of 0.3 μm and a circular hole shape were regularly arranged with an interval of 1 μm. The electrode layer 2 is exposed in each through hole 14b. Further, in this verification test, a counter electrode 15 made of Pt and a reference electrode 16 made of Ag are prepared, the counter electrode 15 and the working electrode 14 are arranged to face each other in the storage portion 12, and the counter electrode 15 and A reference electrode 16 was placed between the working electrodes 14.

  In addition, the constant potential electrolysis part 17 was connected to these working electrode 14, the counter electrode 15, and the reference electrode 16 using conducting wire 18a, 18b, 18c. And the electric current sent between the working electrode 14 and the counter electrode 15 was controlled by the constant potential electrolysis part 17, the electric potential of the working electrode 14 was set to -2.5V, and the said electric potential was maintained for 0.1 hour.

Thereby, it was confirmed that electrolytic deposits appeared on the working electrode 14 in the respective through holes 14b of the photoresist layer 14a. Thereafter, the working electrode 14 was taken out from the electrolytic solution 13 and the photoresist layer 14a was removed. Thereby, it was confirmed that electrolytic deposits having the same shape as the through holes 14b were formed on the surface of the electrode layer 2 at the positions of the through holes 14b of the photoresist layer 14a. Next, the Seebeck coefficient of the electrolytic deposit formed on the surface of the electrode layer 2 was measured using a Seebeck coefficient measuring device. As a result, the electrolytic deposit formed on the surface of the electrode layer 2 had a Seebeck coefficient of 500 to 700 / μVK ⁻¹ and was a positive value. Therefore, it was confirmed that the electrolytic deposit formed on the surface of the electrode layer 2 was a p-type impurity semiconductor layer.

  Next, heat treatment was performed on the impurity semiconductor element 1 having the impurity semiconductor layer 3 on the electrode layer 2 in this manner, and the amount of carbon in the impurity semiconductor layer 3 before and after the heat treatment was examined. Here, as the heat treatment, the impurity semiconductor element 1 was heated at 250 ° C. for 1 hour in an Ar atmosphere. The amount of carbon was measured by XPS. Thus, it was confirmed that the amount of carbon was reduced in the impurity semiconductor layer 3 subjected to the heat treatment. It was also confirmed that the impurity semiconductor layer 3 after the heat treatment was improved in crystallinity.

6). The present invention is not limited to the above-described embodiment, and various modifications can be made within the scope of the present invention. For example, the electrode layer 2, the counter electrode 15, and the reference electrode 16 and the material forming the substrate 4 can be appropriately changed.

  In the above-described embodiment, the case where the electrolytic solution 13 is prepared using TMHA-TFSI as a solvent has been described. However, the present invention is not limited to this, and instead of TMHA-TFSI, 1-butyl-1-methylpyrrolidiniumbis ( Prepare an electrolyte using an ionic liquid such as trifluoromethylsulfonyl) amide, 1-butyl-1-methylpyrrolidiniumtrifluoromethylsulfonate, 1-butyl-1-methylpyrrolidiniumtris (pentafluoroethyl) -trifluorophosphate, or an organic solvent such as propylene carbonate (PC) as the solvent. May be.

  In the above-described embodiment, the case where the p-type impurity semiconductor layer 3 or the n-type impurity semiconductor layer is manufactured using the manufacturing apparatus 11 and the manufacturing method of the present invention has been described. However, the present invention is not limited thereto. Instead, an impurity semiconductor layer having a pn junction may be manufactured using the manufacturing apparatus 11 and the manufacturing method of the present invention. In this case, in the manufacturing apparatus 11, first, a p-type impurity semiconductor is electrolytically deposited on the surface of the electrode layer 2 to form the p-type impurity semiconductor portion 3 a, and then the p stored in the storage portion 12. Replacing the electrolytic solution 13 containing n-type impurity ions with another electrolytic solution containing n-type impurity ions having a conductivity type different from that of the p-type impurity ions, the n-type impurity semiconductor is replaced on the p-type impurity semiconductor portion 3a. To be electrolytically deposited. Thus, the manufacturing apparatus 11 can produce a pn junction impurity semiconductor layer in which an n-type impurity semiconductor layer is stacked on a p-type impurity semiconductor layer 3 on the electrode layer 2.

  In the embodiment described above, the case where the working electrode 14 provided with the electrode layer 2 on the substrate 4 has been described. However, the present invention is not limited to this, and the plate-like electrode layer 2 is not provided without providing the substrate 4. You may apply the working electrode using.

  In the above-described embodiment, the case where the columnar impurity semiconductor portion 3a regularly arranged with a predetermined interval is formed on the electrode layer 2 has been described. However, the present invention is not limited to this and the photoresist is not limited thereto. You may make it change suitably the shape and arrangement | positioning of the impurity semiconductor part 3a by changing the shape and arrangement | positioning of the through-hole 14b formed in the layer 14a. Further, in the manufacturing apparatus 11 and the manufacturing method of the present invention, a layered impurity semiconductor is formed on the electrode layer 2 by using a working electrode in which only the electrode layer 2 is provided on the substrate 4 without forming the photoresist layer 14a. A layer may be formed.

  In the above-described embodiment, the case where the impurity semiconductor layer 3 is heat treated after removing the photoresist layer 14a has been described. However, the present invention is not limited to this, and the impurity semiconductor layer 3 may not be heat treated.

DESCRIPTION OF SYMBOLS 1 Impurity semiconductor element 2 Electrode layer 3 Impurity semiconductor layer 11 Manufacturing apparatus 12 Storage part 13 Electrolytic solution 14 Working electrode 15 Counter electrode 17 Constant potential electrolysis part

Claims (6)

a reservoir in which an electrolyte containing either p-type impurity ions or n-type impurity ions and semiconductor ions is stored;
A working electrode immersed in the electrolyte in the reservoir;
A counter electrode immersed in the electrolyte in the reservoir and disposed opposite the working electrode;
A current is passed between the working electrode and the counter electrode, and a p-type or n-type impurity semiconductor is electrolytically deposited on the surface of the electrode layer of the working electrode, thereby forming an impurity semiconductor layer on the surface of the electrode layer. An apparatus for producing an impurity semiconductor layer, comprising: a potential electrolysis unit. The working electrode includes
A photoresist layer having a plurality of through holes is formed on the surface of the electrode layer, and the impurity semiconductor is electrolytically deposited on the surface of the electrode layer exposed to the outside in each of the through holes. The apparatus for manufacturing an impurity semiconductor layer according to claim 1. A working electrode and a counter electrode are arranged opposite to each other so as to be immersed in the electrolytic solution in a storage part in which an electrolytic solution containing either p-type impurity ions or n-type impurity ions and semiconductor ions is stored, A constant-potential electrolysis unit allows a current to flow between the working electrode and the counter electrode, electrolytically deposits a p-type or n-type impurity semiconductor on the surface of the electrode layer of the working electrode, and impurities on the surface of the electrode layer A method for producing an impurity semiconductor layer, comprising forming a semiconductor layer. In the working electrode, a photoresist layer having a plurality of through holes is formed on the surface of the electrode layer, and the impurity semiconductor is electrolytically deposited on the surface of the electrode layer exposed to the outside in each of the through holes. The method of manufacturing an impurity semiconductor layer according to claim 3. After electrolytically depositing the p-type or n-type impurity semiconductor on the electrode layer using the p-type impurity ion or the n-type impurity ion-containing one electrolyte solution, The n-type impurity ions or the p-type impurity ions that are different in conductivity type from the p-type impurity ions or the n-type impurity ions contained in the one electrolytic solution, 5. The method for producing an impurity semiconductor layer according to claim 3, wherein the other impurity semiconductor of a p-type or the p-type is electrolytically deposited on the one impurity semiconductor. The method for manufacturing an impurity semiconductor layer according to claim 3, wherein the impurity semiconductor layer is heat-treated.

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