JP2016157710A - Method of manufacturing electronic device, electronic device, and electronic component - Google Patents

Abstract

PROBLEM TO BE SOLVED: To achieve an electronic device that can suppress a load at the time when electrodes of electronic components are directly bonded with each other and that is excellent in bonding reliability.SOLUTION: Firstly, an outer face 111 of an electrode 110 for which a metal is used, of an electronic component 100, and an outer face 211 of an electrode 210 for which a metal is used, of an electronic component 200 are contacted with each other. For example, on both the outer face 111 and the outer face 211 to be contacted with each other, a branch-like oxide 112 and an oxide 212 of the respective metals used for the electrode 110 and the electrode 210 are provided, respectively. In such a state where the outer face 211 and the outer face 111 are contacted with each other, reduction of the branch-like oxide 112 and the oxide 212 and application of load are performed to directly bond the electrode 110 and the electrode 210 with each other by solid-phase diffusion bonding.SELECTED DRAWING: Figure 5

Description

  The present invention relates to an electronic device manufacturing method, an electronic device, and an electronic component.

  As a technique for electrically connecting electronic components, a technique for joining metal electrodes using copper (Cu) or the like using solder is known. In addition, a technique for directly joining metal electrodes to each other without using solder is also known. For example, there is a technique in which metal electrodes are directly bonded (solid phase diffusion bonding) by flattening the surfaces of both metal electrodes to be bonded, facing and contacting each other, and applying a load while heating.

JP 2012-204523 A

  In the technique of bringing the metal electrodes flattened as described above into contact with each other and directly joining them, it is necessary to apply a certain load or more in order to bring the metal electrodes into surface contact and join them with sufficient strength. However, when a high load is applied to bring the planarized metal electrodes into surface contact with each other, the metal electrodes are excessively crushed and spread sideways. For example, when there are adjacent metal electrodes, the metal electrodes are adjacent to each other. There is a risk that a short circuit may occur. In addition, a load is applied to the circuit inside the electronic component from the metal electrode, and the circuit may be damaged or easily damaged.

  According to one aspect of the present invention, the first outer surface of the first electrode of the first electrode, in which the first metal is used and the first outer surface is provided with the branch-shaped first oxide of the first metal. A step of bringing the second electronic component into contact with a second outer surface of the second electrode using the second metal, and a step of reducing the first oxide on the first outer surface in contact with the second outer surface; There is provided a method for manufacturing an electronic device, including a step of applying a load pressing one against the other to the first electrode and the second electrode in contact with the first outer surface and the second outer surface.

  According to another aspect of the present invention, there is provided a first electronic component having a first electrode using a first metal, and a second electronic component having a second electrode using a second metal, The first electrode is directly bonded to the second electrode, and the branch-shaped first crystal grains provided on the bonding surface of the first electrode with the second electrode and the second electrode are metal-bonded. An electronic device is provided.

  In addition, according to one aspect of the present invention, there are provided a method for manufacturing an electronic device as described above and an electronic component that can be used in the electronic device.

  According to the disclosed technology, it is possible to realize an electronic device that is superior in bonding reliability and quality by suppressing a load when directly bonding electrodes between electronic components.

It is explanatory drawing of an example of the electrode joining method. It is explanatory drawing of another example of the electrode joining method. It is a figure which shows an example of the joining process which joins an electrode directly. It is explanatory drawing of the condition which may arise when joining an electrode directly. It is explanatory drawing (the 1) of the joining process which concerns on 1st Embodiment. It is explanatory drawing (the 2) of the joining process which concerns on 1st Embodiment. It is explanatory drawing (the 3) of the joining process which concerns on 1st Embodiment. It is explanatory drawing (the 4) of the joining process which concerns on 1st Embodiment. It is a figure which shows another example of the junction part of the electronic device which concerns on 1st Embodiment. It is explanatory drawing (the 1) of the joining process which concerns on 2nd Embodiment. It is explanatory drawing (the 2) of the joining process which concerns on 2nd Embodiment. It is explanatory drawing (the 3) of the joining process which concerns on 2nd Embodiment. It is explanatory drawing (the 1) of the joining process which concerns on 3rd Embodiment. It is explanatory drawing (the 2) of the joining process which concerns on 3rd Embodiment. It is explanatory drawing (the 3) of the joining process which concerns on 3rd Embodiment. It is explanatory drawing (the 1) of the joining process which concerns on 4th Embodiment. It is explanatory drawing (the 2) of the joining process which concerns on 4th Embodiment. It is explanatory drawing (the 3) of the joining process which concerns on 4th Embodiment. It is explanatory drawing (the 4) of the joining process which concerns on 4th Embodiment. It is a figure which shows an example of the electronic device which concerns on 5th Embodiment.

First, a technique for joining electrodes will be described.
FIG. 1 is an explanatory view of an example of an electrode bonding method, and FIG. 2 is an explanatory view of another example of the electrode bonding method.
First, FIG. 1 will be described.

  1A, an electronic component 10a in which a columnar electrode 11a is provided on a main body (substrate) 13a, and an electronic component 20a in which a planar electrode 21a is provided on a main body (substrate) 23a. The cross section of the principal part of the joining process is schematically shown. 1B shows an electronic component 10b in which a columnar electrode 11b is provided on a main body (substrate) 13b, and an electronic component 20b in which a columnar electrode 21b is provided on a main body (substrate) 23b. The cross section of the principal part of the joining process is schematically shown.

  The electronic component 10a, the electronic component 20a, the electronic component 10b, and the electronic component 20b are, for example, a semiconductor element (semiconductor chip), a semiconductor device (semiconductor package) including the semiconductor element, a circuit board, and the like. A metal such as copper is used for the electrode 11a of the electronic component 10a, the electrode 21a of the electronic component 20a, the electrode 11b of the electronic component 10b, and the electrode 21b of the electronic component 20b. The columnar electrodes 11a, 11b, and 21b are also referred to as pillar electrodes, post electrodes, or simply pillars, posts, and the like. Solder 30a and solder 30b are provided on the columnar electrode 11a and the electrode 11b, respectively.

  In FIGS. 1A and 1B, three electrodes 11a on the electronic component 10a side, three electrodes 21a on the electronic component 20a side corresponding thereto, and three electrodes on the electronic component 10b side are shown as electrodes. The electrode 11b and three electrodes 21b on the electronic component 20b side corresponding to the electrode 11b are illustrated. The number of electrodes of the electronic component 10a, the electronic component 20a, the electronic component 10b, and the electronic component 20b is not limited to this example.

  In the example of FIG. 1A, the solder 30a provided on the columnar electrode 11a of the electronic component 10a is joined to the planar electrode 21a of the electronic component 20a, whereby the electronic component 10a, the electronic component 20a, Are electrically connected. In the example of FIG. 1B, the solder 30b provided on the columnar electrode 11b of the electronic component 10b is joined to the columnar electrode 21b of the electronic component 20b, whereby the electronic component 10b and the electronic component 20b are joined. Electrically connected.

  The columnar electrodes 11a, 11b, and 21b as shown in FIGS. 1A and 1B can be miniaturized, narrow pitched, and multi-pinned. For example, high integration and high speed processing are possible. It is suitable for electronic parts and electronic devices that require

However, miniaturization of the joint portion by using such columnar electrodes 11a, 11b, and 21b may cause an increase in current density per joint portion. An increase in the current density of the joint may cause electromigration in which the components of the solder 30a and the solder 30b existing in the joint are moved by the current. As shown in FIGS. 1A and 1B, the limit current density at which the electromigration of the solder component does not occur is about 10 ⁴ kA / cm ² in the joint portion where the solder 30a and the solder 30b are used. Electromigration may cause an increase in resistance, a decrease in strength, a break due to a decrease in strength, or the like. Further, when the pitch is reduced, when the electrodes 11a and 21a and the electrodes 11b and 21b are brought closer to each other at the time of joining, the molten solder 30a and solder 30b flow out to the side, and they are adjacent to each other at a narrow pitch. There may be a problem that a short circuit occurs due to reaching the junction.

  On the other hand, as shown in FIG. 2, a columnar electrode 11c provided on the main body (substrate) 13c of the electronic component 10c, and an electrode 21c provided on the main body (substrate) 23c of the electronic component 20c. There has been proposed a method of directly joining the above without using the solder as described above.

  Note that the electronic component 10c and the electronic component 20c shown in FIG. 2 are, for example, a semiconductor element, a semiconductor device, a circuit board, and the like, as in the example of FIGS. 1A and 1B. A metal such as copper is used for the electrode 11c and the electrode 21c. The electrode 21c may have a columnar shape or a shape other than the columnar shape. Here, three electrodes 11c on the electronic component 10c side and three electrodes 21c on the electronic component 20c side corresponding thereto are illustrated as electrodes, but the number of electrodes is not limited to this example.

As shown in FIG. 2, by directly joining the electrode 11c of the electronic component 10c and the electrode 21c of the electronic component 20c, it is possible to suppress the occurrence of electromigration and short circuit that may occur when solder is interposed therebetween. it can. In the joint portion where the electrode 11c and the electrode 21c are directly joined, the limiting current density is about 10 ⁶ kA / cm ² .

In such direct bonding between the electrode 11c and the electrode 21c, it is important how metal atoms such as copper are brought into contact with each other at the bonding interface.
FIG. 3 is a diagram illustrating an example of a bonding process for directly bonding electrodes. FIGS. 3A to 3D schematically show a cross section of a main part of each step of a bonding process for bonding a pair of opposed electrodes. Moreover, FIG. 4 is explanatory drawing of the condition which may arise when joining an electrode directly. 4 (A) to 4 (C) schematically show a cross section of the main part in each situation.

  In the conventional bonding process, first, as shown in FIG. 3A, the columnar electrode 11c is flattened so that the electrode 11c and the electrode 21c to be directly bonded can be easily brought into contact with each other. If the corresponding electrode 21c is not flat in advance, the electrode 21c is also flattened. Then, as shown in FIG. 3B, the natural oxide films on the surfaces (outer surfaces) of the electrode 11c and the electrode 21c are removed with an argon (Ar) ion beam, hydrochloric acid, citric acid, or the like, and face each other. Thereafter, as shown in FIG. 3C, the electrodes 11c and 21c are aligned and brought into contact with each other, and a load is applied while heating as shown in FIG. 3D. For example, a load that presses the electrode 11c of the electronic component 10c against the electrode 21c of the electronic component 20c is applied. Thereby, metal atoms between the electrode 11c and the electrode 21c that are in contact with each other are interdiffused, and the electrode 11c and the electrode 21c are directly bonded by solid phase diffusion bonding.

  In such a joining process, when a load as shown in FIG. 3D is applied, at least one of the electrode 11c and the electrode 21c whose surfaces to be joined (outer surfaces) are flat, for example, the electrode 11c in this example, is compressed and deformed. A certain amount of load is applied to ensure contact (surface contact) between the electrode 11c and the electrode 21c.

  However, a relatively high load may be required to compress and deform the electrode 11c as in this example. Furthermore, the electronic component 10c and the electronic component 20c may be provided with a plurality of electrodes 11c and a plurality of electrodes 21c, for example, electrodes 11c and electrodes 21c having a scale of several tens, hundreds, thousands, for example. In order to apply a load that compresses and deforms each electrode 11c in order to ensure contact between the electrode 11c and the electrode 21c of such a scale, a high load is required to compress and deform all the electrodes 11c. There is a case.

  When the load at the time of joining is high, a part or all of the electrodes 11c are excessively crushed and spread to the side as shown in FIG. 4 (A), until the joining part between the adjacent electrode 11c and the electrode 21c. If it reaches, there is a possibility that a short 40c may occur between adjacent joints.

  Further, due to a high load at the time of joining, as shown in FIG. 4 (B), the damage is caused to 41c of the circuit 12c provided in the lower layer of the electrode 11c on the electronic component 10c side or the lower layer of the electrode 21c on the electronic component 20c side. There is a risk of damage 42c of the circuit 22c. Or there exists a possibility that it may be in the state which damage 41c and damage 42c are easy to generate | occur | produce by the external force and stress after joining.

  In order to avoid such damage 41c and damage 42c, there may be a restriction on the maximum load that can be applied during bonding. However, within the range of such restrictions, not all of the plurality of electrodes 11c can be sufficiently compressed and deformed due to variations in height of the electrodes 11c and 21c, warpage of the electronic components 10c and 20c, and the like. Sometimes. In this case, as shown in FIG. 4C, the electrode 11c and the electrode 21c are bonded by solid phase diffusion bonding, and a bonding portion 43c having a relatively high bonding strength is formed. On the other hand, There is also a possibility that the joint portion 44c having a relatively weak joint strength may be formed. There may be a limit to the number of electrodes 11c that can be bonded to the electrode 21c with sufficient strength due to restrictions on the maximum load that can be applied during bonding.

  Thus, if the load when joining the electrode 11c and the electrode 21c with flat outer surfaces to be joined is high, the short 40c may occur, or the circuit 41c may be damaged 41c or the circuit 22c may be damaged 42c. There is. On the other hand, with a low load, there is a possibility that the electrode 11c and the electrode 21c whose outer surfaces to be joined are brought into contact with each other with certainty and a joined portion having sufficient joining strength cannot be formed.

  Also, in FIG. 3, the electrode 11c and the electrode 21c are brought into contact with each other after alignment (FIG. 3 (B)) after removing the natural oxide film on the outer surface to be bonded to each other (FIG. 3 (C)). FIG. 3 illustrates a process of applying a load while heating (FIG. 3D) and directly joining. However, if the electrode 11c and the electrode 21c are exposed to the atmosphere after removing the natural oxide film on the outer surface and before joining the electrode 11c and the electrode 21c, the outer surface may be reoxidized. The electrode 11c and the electrode 21c whose outer surfaces are re-oxidized may not be able to form a bonded portion with sufficient bonding strength.

In view of the above points, the electrodes are directly bonded to each other by using a technique as shown in the following embodiment.
First, the first embodiment will be described.

  5-8 is explanatory drawing of the joining process based on 1st Embodiment. FIG. 5A is a schematic cross-sectional view of an essential part of an example of the preparation and arrangement steps of the electronic component according to the first embodiment, and FIG. 5B is an enlarged schematic cross-sectional view of a portion X1 in FIG. is there. 6A is a schematic cross-sectional view of an essential part of an example of an electrode contact process according to the first embodiment, and FIG. 6B is an enlarged schematic cross-sectional view of a portion X2 in FIG. 6A. FIG. 7A is a schematic cross-sectional view of an essential part of an example of the reduction and load application process according to the first embodiment, and FIG. 7B is an enlarged schematic cross-sectional view of a portion X3 in FIG. 8A is a schematic cross-sectional view of an essential part of an example of an electronic device obtained by the bonding process according to the first embodiment, and FIG. 8B is an enlarged schematic cross-sectional view of a portion X4 in FIG. 8A. is there.

  First, as shown in FIG. 5A, an electronic component 100 in which a columnar electrode 110 is provided on a main body (substrate) 130, and an electronic in which a columnar electrode 210 is provided on a main body (substrate) 230. A part 200 is prepared. The electronic component 100 and the electronic component 200 are, for example, a semiconductor element, a semiconductor device, a circuit board, and the like.

  The main body 130 of the electronic component 100 includes a circuit 131 that is electrically connected to the electrode 110, and the main body 230 of the electronic component 200 includes a circuit 231 that is electrically connected to the electrode 210. Yes. The electronic component 100 is provided with a columnar electrode 110 so as to protrude from the main body 130, and the electronic component 200 is provided with a columnar electrode 210 so as to protrude from the main body 230. The electrode 110 of the electronic component 100 and the electrode 210 of the electronic component 200 are made of metal, for example, copper, nickel (Ni), aluminum (Al), zinc (Zn), titanium (Ti), or at least one of these. Including alloys are used. FIG. 5A illustrates, as an example, three electrodes 110 on the electronic component 100 side and corresponding three electrodes 210 on the electronic component 200 side, but the number of electrodes 110 and electrodes 210 is limited to this example. Is not to be done.

  An oxide 112 as shown in FIG. 5B is formed on the outer surface 111 of the electrode 110 of the electronic component 100 (the surface bonded to the electrode 210 of the electronic component 200). The oxide 112 is an oxide of a metal used for the electrode 110. For example, copper oxide is formed as the oxide 112 on the outer surface 111 of the electrode 110 using copper.

  A columnar electrode 110 in which an oxide 112 is formed on the outer surface 111 is obtained by performing wet processing using a predetermined chemical solution on a columnar electrode formed on the main body 130 using, for example, a plating method. Can do.

  For the wet treatment, a mixed solution of sodium chlorite and sodium hydroxide, an alkaline solution such as sodium hydroxide or potassium hydroxide, or the like can be used. For example, the columnar electrode after plating is immersed in a predetermined chemical solution, or the electrode immersed in the chemical solution is energized (anodic oxidation). The columnar electrode after plating is eroded by the chemical solution on the outer surface, and the eroded outer surface is oxidized. As a result, an electrode 110 in which an oxide 112 is formed on the outer surface 111 as shown in FIG. 5B is obtained. According to the wet treatment using a predetermined chemical solution, the outer surface 111 of the electrode 110 is formed with good shape controllability and reproducibility compared with a natural oxide film that is naturally formed on the outer surface of the electrode in the atmosphere after plating. An oxide 112 can be formed.

  By such wet processing, as shown in FIG. 5B, the electrode 110 is formed with an outer surface 111 in which protrusions 113 including the branch-like oxide 112 are formed on at least the surface. FIG. 5B illustrates a mode in which the branch-like oxide 112 is formed on the surface of the protrusion 113, but not only the surface of the protrusion 113 but also the entire protrusion 113 may be the oxide 112. Good. In a wet process using a predetermined chemical solution, an oxide 112 that is branched at a level of several nanometers to several tens of nanometers is formed at least on the surface of the protrusion 113. The thickness of the oxide 112 can be about 100 nm to 200 nm.

  The height of the protrusion 113 and the thickness of the oxide 112 depend on the conditions of the wet process, for example, the type of chemical used, the concentration of the chemical, the temperature of the chemical, the immersion time in the chemical, and the current density when energized. It can be controlled according to the energization conditions.

  Similarly, the outer surface 211 of the electrode 210 of the electronic component 200 to be bonded to the electronic component 100 as described above (the surface to be bonded to the electrode 110 of the electronic component 100) also has an oxide 212 as shown in FIG. Is formed. The oxide 212 is a metal oxide used for the electrode 210.

  By performing a wet process using a predetermined chemical solution such as sodium chlorite or sodium hydroxide on the electrode formed on the main body 230 using, for example, a plating method, FIG. As a result, an electrode 210 in which an oxide 212 is formed on the outer surface 211 is obtained. By wet processing, an outer surface 211 in which protrusions 213 including at least a branch-like oxide 212 are formed on the surface of the electrode 210 is formed. FIG. 5B illustrates a mode in which the branch-like oxide 212 is formed on the surface of the protrusion 213, but not only the surface of the protrusion 213 but also the entire protrusion 213 may be the oxide 212. Good. By wet processing using a predetermined chemical solution, an oxide 212 having a branch shape at a level of several nanometers to several tens of nanometers is formed at a thickness of about 100 nm to 200 nm on at least the surface of the protrusion 213.

  According to the wet process using a predetermined chemical solution, the oxide 212 can be formed on the outer surface 211 of the electrode 210 with better shape controllability and reproducibility than the natural oxide film. The height of the protrusion 213 and the thickness of the oxide 212 depend on the conditions of the wet process, for example, the type of chemical used, the concentration of the chemical, the temperature of the chemical, the immersion time in the chemical, It can be controlled according to the energization conditions.

  The electronic component 100 and the electronic component 200 as described above are prepared. As shown in FIGS. 5A and 5B, the electronic component 100 and the electronic component 200 are connected to each other with the electrode 110 and the electrode 210. Position them so that they face each other. For example, using a flip chip bonder, the electronic component 100 and the electronic component 200 are aligned and arranged to face each other. By aligning the electronic component 100 and the electronic component 200 so as to face each other, as shown in FIG. 5B, the outer surface 111 of the electrode 110 and the electrode 210 on which the branch oxide 112 is formed, The outer surface 211 on which the branch-like oxide 212 is formed opposes.

  Next, the electronic component 100 and the electronic component 200 opposed to each other are brought close to each other, and as shown in FIGS. 6A and 6B, the outer surface 111 of the electrode 110 on which the branch oxide 112 is formed, The outer surface 211 of the electrode 210 on which the branch-like oxide 212 is formed is brought into contact with and temporarily attached. At that time, ultrasonic waves are applied to the electrodes 110 and 210, or the electrodes 110 and 210 are scrubbed so that the outer surface 111 and the outer surface 211 are brought into contact with each other and temporarily attached. The branch-like oxide 112 on the outer surface 111 and the branch-like oxide 212 on the outer surface 211 can be contacted and temporarily attached so that one enters the other gap. The branch-like oxide 112 on the outer surface 111 and the branch-like oxide 212 on the outer surface 211 can be deformed by a force applied during contact and temporary attachment.

  After contact and temporary attachment, as shown in FIGS. 7A and 7B, the electronic component 100 and the electronic component 200 are exposed to an atmosphere containing a reducing gas at 100 ° C. or higher, and one is on the other side. For example, a load is applied so as to press the electronic component 100 against the electronic component 200 side.

Here, organic acids such as formic acid, acetic acid and citric acid, alcohols, hydrogen plasma and the like can be used as the reducing gas.
The load applied to the electronic component 100 is, for example, about several MPa per electronic component 100, and may be a relatively low load compared to a case where flat electrodes are in surface contact (FIGS. 2 and 3). it can. By applying a load to the electronic component 100, the branch structure of the outer surface 111 of the electrode 110 and the branch structure of the outer surface 111 of the electrode 210 of the electronic component 200 are plastically deformed. For example, the branch structures of each other are crushed. Further, by applying a load to the electronic component 100, it is possible to suppress the positional deviation between the electronic component 100 and the electronic component 200 in the joining process.

When the electronic component 100 and the electronic component 200 are exposed to an atmosphere containing a reducing gas, as shown in FIG. 7B, the branching oxide 112 and the oxide 212 that are in contact with each other enter the gap therebetween. The gas is reduced to metal 114 and metal 214, respectively. For example, when the branch oxide 112 and the oxide 212 are copper oxide (Cu ₂ O) and formic acid (HCOOH) is used as the reducing gas, the following equations (1) and (2) ) Reduces copper oxide to copper.

Cu ₂ O + 2HCOOH → 2Cu (HCOO) + H ₂ (1)
2Cu (HCOO) → 2Cu + H ₂ + 2CO ₂ (2)
Copper formate is formed by the reaction of copper oxide and formic acid as in formula (1), and the formed copper formate is thermally decomposed (decomposition temperature 120 ° C. to 150 ° C.) as in formula (2). It is formed.

  A load is applied to the electronic component 100 in an atmosphere containing a reducing gas, and the electronic component 100 is pressed against the electronic component 200 side. Since the outer surface 111 of the electrode 110 of the electronic component 100 and the outer surface 211 of the electrode 210 of the electronic component 200 have a branch structure, they have a large surface area per unit volume and are easily plastically deformed even with a relatively weak force. Therefore, the outer surface 111 of the electrode 110 and the outer surface 211 of the electrode 210 can be compared with each other even when the load applied to the electronic component 100 is relatively low compared to the case where the flat electrodes are brought into surface contact (FIGS. 2 and 3). Can be brought into contact with a relatively large contact area.

  The branch-like oxide 112 and the oxide 212 on the outer surface 111 and the outer surface 211 are each made of metal in an atmosphere containing a reducing gas as described above in the process of contact with a relatively large area as a load is applied. 114 and metal 214. Between the metal 114 and the metal 214 produced by the reduction, which is sufficiently lower than their melting points and at a relatively low temperature at which the branching oxide 112 and the oxide 212 are reduced with the reducing gas, A sintering phenomenon occurs.

  In this way, by applying a load to the electronic component 100 while reducing the branch oxides 112 and 212, the electrode 110 and the electrode 210 are in a relatively large area and are in contact with the metal 114 and the metal 214. As a result, sintering occurs between the metal 114 and the metal 214 in contact. As a result, metal bonding between the electrode 110 and the electrode 210 progresses, and as shown in FIGS. 8A and 8B, the electrode 110 and the electrode 210 are directly bonded by solid phase diffusion bonding. . In this way, the electronic device 1 in which the electronic component 100 and the electronic component 200 are electrically connected by the electrode 110 and the electrode 210 that are directly joined to each other is obtained.

Here, in the reduction and load application as shown in FIGS. 7A and 7B and FIGS. 8A and 8B, for example, solid phase diffusion bonding proceeds as follows. .
That is, by heating in the reducing atmosphere shown in FIGS. 7A and 7B, the branch oxide 112 of the electrode 110 is reduced and crystal grains near the outer surface 111 grow, and the electrode The branch-like oxide 212 of 210 is reduced, and crystal grains near the outer surface 211 grow. On the other hand, when the loads shown in FIGS. 7A and 7B are applied, the branch oxide 112 of the electrode 110 and the branch oxide 212 of the electrode 210 are intertwined with plastic deformation. To be joined. Along with this bonding, the reduction of the branch oxide 112 and the branch oxide 212 and the growth of crystal grains of the metal 114 and the metal 214 after the reduction progress. As a result, a metal structure including one or a plurality of crystal grains is formed in the branch portions of the outer surface 111 and the outer surface 211. Although the crystal grains near the outer surface 111 and the outer surface 211 may partially include relatively large crystal grains formed by integrating a plurality of crystal grains by recrystallization, the crystal grains are relatively fine as a whole. Become. By forming such a metal structure of crystal grains from the branch oxide 112 and the branch oxide 212 joined so as to be intertwined with each other, the junction interface between the electrode 110 and the electrode 210 has a mutual branch. A metal structure is formed in which the crystal grains are intertwined.

  As shown in FIGS. 8A and 8B, when heating (reduction) and load application further progress, the crystal grains on the electrode 110 side and the crystal grains on the electrode 210 side that are intertwined with each other In between, metal bonding progresses. Thereby, the electrode 110 and the electrode 210 are solid-phase diffusion bonded, and the metal structure in a state where the crystal grains on the electrode 110 side and the crystal grains on the electrode 210 side are entangled with each other at the interface between the electrode 110 and the electrode 210. Is formed.

  In addition, after joining the electrode 110 and the electrode 210, the clear mutual outer surface 111 and outer surface 211 disappear and one joining interface is formed, and the joining interface can also disappear, but the above FIG. FIG. 8B schematically shows the vicinity of the bonding interface for convenience of explanation.

  Each crystal grain of the electrode 110 and the electrode 210 at the bonding interface obtained by reduction has a continuous structure with the metal crystal grain of the base metal of the electrode 110 and the electrode 210, respectively. The joint between the electrode 110 and the electrode 210 has a metal structure in which the joint interface and the crystal grains of the base material are connected by metal joining in addition to the crystal grains at the joint interface, and has high joint strength and electrical conductivity.

  In addition, the bonding interface between the electrode 110 and the electrode 210 is in a state in which the crystal grains are entangled with each other, and thus has high strength against external forces and stresses in a shear direction parallel or substantially parallel to the bonding interface. .

  According to the method as shown in FIG. 5 to FIG. 8, it is possible to realize a bonded portion with excellent bonding reliability obtained by directly bonding the electrode 110 and the electrode 210 using metal with a relatively low load. Thereby, it is possible to realize the electronic device 1 having excellent bonding reliability between the electrode 110 of the electronic component 100 and the electrode 210 of the electronic component 200.

  In the electronic device 1, since solder is not used for joining the electrode 110 and the electrode 210, it is possible to avoid an increase in resistance, a decrease in strength, a breakage due to a decrease in strength, and the like due to electromigration of the solder component. Furthermore, it is possible to avoid the outflow of the solder to the side when a load is applied, and a short circuit with the adjacent joint portion. In addition, in order to suppress the load applied when the electronic component 100 and the electronic component 200 are joined together, the excessive compressive deformation of the electrode 110 and the electrode 210 and the damage due to the load of the circuit 131 connected to the electrode 110 and the circuit 231 connected to the electrode 210 are suppressed. be able to. According to the methods shown in FIGS. 5 to 8, it is possible to realize the electronic device 1 that is excellent in bonding reliability and quality.

  Further, in the electronic device 1, since the electrodes 110 and 210 are bonded by solid phase diffusion bonding while reducing, the oxide 112 on the outer surface 111 and the oxide 212 on the outer surface 211 are not necessarily removed before bonding. It is not necessary to keep it. Furthermore, it becomes unnecessary to consider the influence of the environment before joining on the outer surface 111 of the electrode 110 and the outer surface 211 of the electrode 210, that is, reoxidation of the electrode 110 and the electrode 210 due to exposure to the atmosphere. In addition, the management cost of the electronic component 200 can be reduced.

  In the description of the bonding process in FIGS. 5 to 8, the electrode 110 and the electrode 210 to be bonded are respectively a columnar electrode protruding from the main body 130 and a columnar electrode protruding from the main body 230. In addition, one of the electrode 110 and the electrode 210 may be an electrode provided so as not to protrude from the main body (130 or 230). Even if a branch-like oxide (112 or 212) is formed on the outer surface of such a non-projecting electrode and the joining process according to the procedure shown in FIGS. An electronic device having excellent quality can be obtained.

  In the description of the bonding process in FIGS. 5 to 8, mainly the bonding of the electrode 110 and the electrode 210 using copper is exemplified, but the electrode 110 and the electrode 210 may be formed of nickel, aluminum, zinc, titanium, and the like. Even when an alloy containing at least one of them is used, the same structure and effects as described above can be obtained. For the electrode 110 and the electrode 210, the same kind of metal can be used, or different kinds of metals can be used.

  In addition, the electronic device 1 obtained by bonding the electronic component 100 and the electronic component 200 has a bonding portion between the electrode 110 and the electrode 210 as shown in FIG. You may have a junction.

FIG. 9 is a diagram illustrating another example of the joint portion of the electronic device according to the first embodiment. FIG. 9A and FIG. 9B each schematically show a cross section of a main part of another example of the joint.
As described above, in the joining process of the electronic component 100 and the electronic component 200, the branched oxides 112 and 212 of the electrode 110 and the electrode 210 are brought into contact with each other (FIGS. 5 and 6), and the electrons are reduced while reducing them. A load is applied to the component 100 (FIG. 7). Then, sintering, atomic diffusion, and metal bonding are advanced between the metal 114 and the metal 214 obtained by reduction, and the electrode 110 and the electrode 210 are directly bonded by solid phase diffusion bonding.

  In such a joining process, depending on the surface shapes of the electrode 110 and the electrode 210 before contact and the load applied after the contact, a gap as shown in FIG. 9A is formed between the electrode 110 and the electrode 210 after joining. 310 or an unreduced oxide 320 as shown in FIG. 9B may remain. Thus, even when the gap 310 or the oxide 320 partially remains in the joint between the electrode 110 and the electrode 210, the electronic device 1 with high joint reliability can be obtained by solid-phase diffusion bonding in other portions. Can be realized.

Next, a second embodiment will be described.
10-12 is explanatory drawing of the joining process based on 2nd Embodiment. FIG. 10A is a schematic cross-sectional view of an essential part of an example of preparation and arrangement steps of an electronic component according to the second embodiment, and FIG. 10B is an enlarged schematic cross-sectional view of a portion X5 in FIG. is there. FIG. 11A is a schematic cross-sectional view of an essential part of an example of an electrode contact process according to the second embodiment, and FIG. 11B is an enlarged schematic cross-sectional view of a portion X6 in FIG. FIG. 12A is a schematic cross-sectional view of an essential part of an example of the reduction and load application process according to the second embodiment, and FIG. 12B is an enlarged schematic cross-sectional view of a portion X7 in FIG.

  Also in the bonding process according to the second embodiment, first, as in the first embodiment, the electronic component 100 in which the branch-like oxide 112 is formed on the outer surface 111 of the electrode 110, and the electrode 210. An electronic component 200 having a branch-like oxide 212 formed on the outer surface 211 is prepared. Then, the prepared electronic component 100 and electronic component 200 are aligned and positioned so that the electrodes 110 and 210 are opposed to each other. At that time, in the second embodiment, as shown in FIGS. 10A and 10B, the resin 400 is interposed between the electrode 110 and the electrode 210 which are opposed to each other.

  For the resin 400, for example, a material having adhesiveness and penetrating a reducing gas used in a reduction process described later is used. In addition, the resin 400 may be made of a material such as a flux that itself has a reducing property, or may contain a material having such a reducing property as a component. For example, the resin 400 can be provided in advance on at least one of the electrode 110 and the electrode 210 using a technique such as coating, dispensing, or dipping.

  In this way, the resin 400 is interposed between the electrode 110 and the electrode 210, and as shown in FIGS. 11A and 11B, the electronic component 100 and the electronic component 200 are brought close to each other, and the electrode 110 and the electrode 210 are brought close to each other. Contact with and tack.

  At that time, by bringing the electronic component 100 and the electronic component 200 close to each other, the electrode 110 and the electrode 210 approach each other while extruding the resin 400 therebetween. The outer surface 111 on which the branch-like oxide 112 is formed and the outer surface 211 on which the branch-like oxide 212 is formed are in contact with each other so that one enters the other gap. The branch-like oxide 112 and the oxide 212 can be deformed by a force applied upon contact. The electrode 110 and the electrode 210 are temporarily attached by the resin 400 extruded to the periphery with the contact between the outer surface 111 and the outer surface 211, or the resin 400 remaining in the gap after the contact between the outer surface 111 and the outer surface 211. .

Note that when the outer surface 111 and the outer surface 211 are brought into contact with each other, an ultrasonic wave may be applied to the electrode 110 and the electrode 210, or the electrode 110 and the electrode 210 may be scrubbed.
After the contact and temporary attachment, as shown in FIGS. 12A and 12B, the electronic component 100 and the electronic component 200 are exposed to an atmosphere of, for example, 100 ° C. or more containing a reducing gas (formic acid or the like). A relatively low load (about several MPa) is applied to the electronic component 100. The reducing gas penetrates the resin 400 and reduces the branching oxide 112 and the oxide 212 when they reach the branching oxide 112 and the oxide 212. As a result, the metal 114 and the metal 214 are generated on the outer surface 111 and the outer surface 211. Moreover, when using the resin 400 which has reducibility, a load can be applied, heating in inert gas atmosphere or air | atmosphere.

  By applying the load during reduction as described above, the branch structures of the outer surface 111 and the outer surface 211 are plastically deformed, and the outer surface 111 and the outer surface 211 come into contact with each other with a relatively large contact area. In the process in which the outer surface 111 and the outer surface 211 are in contact with each other by the load, the oxide 112 and the oxide 212 are reduced to the metal 114 and the metal 214, respectively.

  With reduction and load application, sintering, atomic diffusion, and metal bonding occur between the metal 114 and the metal 214 generated with a relatively large contact area due to the branch structure of the oxide 112 and the oxide 212. It progresses and the electronic device with which the electrode 110 and the electrode 210 were directly joined is obtained.

  The resin 400 interposed between the electrode 110 and the electrode 210 at the time of joining may remain between the electrode 110 and the electrode 210 even after joining, or after joining, due to the heat of the joining process. It may disappear by evaporation (volatilization).

Even if a bonding process as shown in FIGS. 10 to 12 is used, an electronic device having excellent bonding reliability and quality can be realized.
In addition, by joining the electrode 110 and the electrode 210 by solid phase diffusion bonding while reducing, it is possible to reduce the reduction process before bonding and to reduce the management cost of the electronic component 100 or the electronic component 200.

Next, a third embodiment will be described.
13-15 is explanatory drawing of the joining process based on 3rd Embodiment. FIG. 13A is a schematic cross-sectional view of an essential part of an example of the preparation and arrangement steps of an electronic component according to the third embodiment, and FIG. 13B is an enlarged schematic cross-sectional view of a portion X8 in FIG. is there. FIG. 14A is a schematic cross-sectional view of an essential part of an example of an electrode contact process according to the third embodiment, and FIG. 14B is an enlarged schematic cross-sectional view of a portion X9 in FIG. FIG. 15A is a schematic cross-sectional view of an essential part of an example of the reduction and load application process according to the third embodiment, and FIG. 15B is an enlarged schematic cross-sectional view of a portion X10 in FIG.

  Also in the bonding process according to the third embodiment, first, as in the first embodiment, the electronic component 100 in which the branch-like oxide 112 is formed on the outer surface 111 of the electrode 110, and the electrode 210. An electronic component 200 having a branch-like oxide 212 formed on the outer surface 211 is prepared. Then, the prepared electronic component 100 and electronic component 200 are aligned and positioned so that the electrodes 110 and 210 are opposed to each other. At that time, in the third embodiment, as shown in FIGS. 13A and 13B, the carbon paste 500 is interposed between the electrode 110 and the electrode 210 which are opposed to each other.

  The carbon paste 500 is a resin composition in which carbon is contained as a filler in a resin. As the resin of the carbon paste 500, various resin materials such as epoxy and polyimide can be used. For the resin of the carbon paste 500, a reducing material such as flux can be used, or such a reducing material can be contained as a component. As carbon of the carbon paste 500, carbon particles (powder) having various shapes such as a spherical shape and a flake shape can be used. The carbon paste 500 can be provided in advance on at least one of the electrode 110 and the electrode 210 using a technique such as coating, dispensing, or dipping.

  In this way, the carbon paste 500 is interposed between the electrode 110 and the electrode 210, and as shown in FIGS. 14A and 14B, the electronic component 100 and the electronic component 200 are brought close to each other, and the electrode 110 and the electrode 210 is contacted and temporarily attached.

  At that time, by bringing the electronic component 100 and the electronic component 200 close to each other, the electrode 110 and the electrode 210 approach each other while extruding the carbon paste 500 therebetween. The outer surface 111 on which the branch-like oxide 112 is formed and the outer surface 211 on which the branch-like oxide 212 is formed are in contact with each other so that one enters the other gap. The branch-like oxide 112 and the oxide 212 can be deformed by a force applied upon contact. The electrode 110 and the electrode 210 are temporarily attached by the carbon paste 500 extruded to the periphery with the contact between the outer surface 111 and the outer surface 211, or the carbon paste 500 remaining in the gap after the contact between the outer surface 111 and the outer surface 211. Is done.

Note that when the outer surface 111 and the outer surface 211 are brought into contact with each other, an ultrasonic wave may be applied to the electrode 110 and the electrode 210, or the electrode 110 and the electrode 210 may be scrubbed.
After contact and temporary attachment, as shown in FIGS. 15A and 15B, the electronic component 100 and the electronic component 200 are heated on the electronic component 100 while being heated, for example, in an inert gas atmosphere or in the atmosphere. A relatively low load (about several MPa) is applied.

In the third embodiment, carbon (C) in the carbon paste 500 existing between and around the electrodes 110 and 210 functions as a reducing agent, and the branch oxides 112 and oxides. 212 is reduced to metal 114 and metal 214, respectively. For example, when the branched oxide 112 and the oxide 212 are copper oxide (Cu ₂ O), the copper oxide is reduced to copper by the following formula (3).

2Cu ₂ O + C → 4Cu + CO ₂ (3)
As shown in formula (3), copper is formed by the reaction between copper oxide and carbon. Since the carbon paste 500 interposed between the electrode 110 and the electrode 210 has a reducing property, a load can be applied to the electronic component 100 while heating in an inert gas atmosphere or in the air. When heating is completed in the atmosphere, the apparatus configuration can be simplified, for example, no vacuum apparatus is required.

  Even when the carbon paste 500 is used as described above, the load may be applied to the electronic component 100 by exposure to an atmosphere of 100 ° C. or higher containing a reducing gas (formic acid or the like). Thereby, the unreduced oxide 112 and the oxide 212 can be reduced, or the effect that the reduction of the oxide 112 and the oxide 212 can be performed in a shorter time can be obtained.

  By applying the load during reduction as described above, the branch structures of the outer surface 111 and the outer surface 211 are plastically deformed, and the outer surface 111 and the outer surface 211 come into contact with each other with a relatively large contact area. In the process in which the outer surface 111 and the outer surface 211 are in contact with each other by the load, the oxide 112 and the oxide 212 are reduced to the metal 114 and the metal 214, respectively.

  With reduction and load application, sintering, atomic diffusion, and metal bonding occur between the metal 114 and the metal 214 generated with a relatively large contact area due to the branch structure of the oxide 112 and the oxide 212. It progresses and the electronic device with which the electrode 110 and the electrode 210 were directly joined is obtained.

  Note that the resin of the carbon paste 500 interposed between the electrode 110 and the electrode 210 at the time of bonding may remain between the electrode 110 and the electrode 210 even after the bonding, or a bonding process after the bonding. It may disappear by evaporation due to heat. In addition, carbon of the carbon paste 500 may remain between the electrode 110 and the electrode 210 after bonding. However, since carbon has conductivity, the influence on the electrical connection between the electrode 110 and the electrode 210 is not affected. Can be suppressed.

Even if a bonding process as shown in FIGS. 13 to 15 is used, an electronic device having excellent bonding reliability and quality can be realized.
In addition, by joining the electrode 110 and the electrode 210 by solid phase diffusion bonding while reducing, it is possible to reduce the reduction process before bonding and to reduce the management cost of the electronic component 100 or the electronic component 200.

Next, a fourth embodiment will be described.
16-19 is explanatory drawing of the joining process based on 4th Embodiment. FIG. 16A is a schematic cross-sectional view of an essential part of an example of the preparation and arrangement steps of an electronic component according to the fourth embodiment, and FIG. 16B is an enlarged schematic cross-sectional view of a portion X11 in FIG. is there. FIG. 17A is a schematic cross-sectional view of an essential part of an example of an electrode contact process according to the fourth embodiment, and FIG. 17B is an enlarged schematic cross-sectional view of a portion X12 in FIG. FIG. 18A is a schematic cross-sectional view of an essential part of an example of the reduction and load application process according to the fourth embodiment, and FIG. 18B is an enlarged schematic cross-sectional view of a portion X13 in FIG. FIG. 19A is a schematic cross-sectional view of an essential part of an example of an electronic device obtained by the bonding process according to the fourth embodiment, and FIG. 19B is an enlarged schematic cross-sectional view of a portion X14 in FIG. is there.

  In the bonding process according to the fourth embodiment, as in the first embodiment, a branch oxide is formed on the outer surface 111 of the electrode 110 as shown in FIGS. 16A and 16B. The electronic component 100 in which 112 is formed is prepared. In the joining process according to the fourth embodiment, a branch-like oxide is formed on the outer surface 211a as shown in FIGS. 16A and 16B as a joining counterpart component of the electronic component 100. An electronic component 200a having an electrode 210a that has not been prepared is prepared.

  Here, the electronic component 200a is, for example, a semiconductor element, a semiconductor device, a circuit board, or the like. The electrode 210a of the electronic component 200a is a columnar electrode provided so as to protrude from the main body 230a here, but may be an electrode provided so as not to protrude from the main body 230a. For the electrode 210a, copper, nickel, aluminum, zinc, titanium, an alloy containing at least one of these, or the like is used. The main body 230a includes a circuit 231a that is electrically connected to the electrode 210a. A natural oxide film (not shown) may be formed on the outer surface 211a of the electrode 210a. Note that the number of the electrodes 210a and the electrodes 110 is not limited to the example of FIG.

  As shown in FIGS. 16A and 16B, the prepared electronic component 100 and electronic component 200a are aligned and arranged so that the electrodes 110 and 210a face each other.

  Then, as shown in FIGS. 17A and 17B, the electronic component 100 and the electronic component 200a are brought close to each other, the outer surface 111 of the electrode 110 on which the branch oxide 112 is formed, and the electrode 210a. The outer surface 211a on which the branch oxide is not formed is brought into contact. The branch oxide 112 can be deformed by a force applied upon contact. Further, the outer surface 211a of the electrode 210a can be deformed by being pushed by the branch-like oxide 112 of the electrode 110 by a force applied at the time of contact.

  Note that when the outer surface 111 and the outer surface 211a are brought into contact with each other, ultrasonic waves may be applied to the electrode 110 and the electrode 210a, or the electrode 110 and the electrode 210a may be scrubbed. Further, between the electrode 110 and the electrode 210a, a resin (a resin having or not having a reducing property) as described in the second embodiment, and a carbon as described in the third embodiment. A paste may be interposed.

  After the contact between the outer surface 111 and the outer surface 211a, as shown in FIGS. 18A and 18B, the electronic component 100 and the electronic component 200a are, for example, 100 ° C. or higher containing a reducing gas (formic acid or the like). And a relatively low load (about several MPa) is applied to the electronic component 100. Alternatively, when a reducing resin or carbon paste is interposed between the electrode 110 and the electrode 210a, a relatively low load is applied while heating in an inert gas atmosphere or in the air.

  By applying the load during reduction as described above, the outer surface 111 comes into contact with the outer surface 211a while being plastically deformed in its branch structure (while being crushed to the outer surface 211 side). In this contact process, the oxide 112 is reduced to the metal 114.

  Along with the reduction and load application, the branch-like oxide 112 on the outer surface 111 is reduced to the metal 114, and the natural oxide film that may exist on the outer surface 211a is reduced, and the metal 114 and the outer surface 211a are sintered. Bonding, atomic diffusion, and metal bonding progress. Thereby, an electronic device 1a in which the electrode 110 and the electrode 210a are directly joined as shown in FIGS. 19A and 19B is obtained.

  When a resin or carbon paste is interposed between the electrode 110 and the electrode 210a at the time of bonding, the resin or resin component may remain after the bonding, or after the bonding, It may disappear by evaporation due to heat. Further, carbon of the carbon paste may remain between the electrode 110 and the electrode 210a after bonding.

  Even if a joining process as shown in FIGS. 16 to 19 is used, a joint having excellent joining reliability obtained by joining the metal electrode 110 and the electrode 210a by solid phase diffusion joining is realized with a relatively low load. be able to. Since the electrode 110 and the electrode 210a can be directly joined without using solder in such a relatively low load, the electromigration of the solder component, the short circuit due to the outflow of the solder or excessive compression deformation, the circuit 131 or the circuit 231a. Damage due to the load can be suppressed. Also by the joining process as shown in FIG. 16 to FIG. 19, it is possible to realize the electronic device 1 a which is excellent in bonding reliability and quality.

  Further, by joining the electrode 110 and the electrode 210a by solid phase diffusion bonding while reducing, it is possible to reduce the reduction process before bonding and to reduce the management cost of the electronic component 100 or the electronic component 200a.

Next, a fifth embodiment will be described.
The joining process according to the first to fourth embodiments can be applied to direct joining of electrodes between various electronic components. An application example of the bonding process will be described as a fifth embodiment.

FIG. 20 is a diagram illustrating an example of an electronic apparatus according to the fifth embodiment. FIG. 20 schematically illustrates a cross-section of an essential part of an example of an electronic apparatus according to the fifth embodiment.
An electronic device 600 illustrated in FIG. 20 includes a circuit board 610, a semiconductor device 620 mounted on the circuit board 610, and a semiconductor device 630.

  The circuit board 610 is, for example, a printed board. The circuit board 610 includes a conductor 613 and a conductor 614 provided on the front surface 611 and the back surface 612, respectively, and an internal conductor 615 that electrically connects the conductor 613 and the conductor 614. The semiconductor device 620 and the semiconductor device 630 are mounted on the surface 611 side of the circuit board 610. For example, bumps 616 are mounted on the conductor 614 on the back surface 612 of the circuit board 610.

  The semiconductor device 620 is, for example, a logic IC (Integrated Circuit) having a predetermined processing function such as calculation. The semiconductor device 620 is bonded to the circuit board 610 at the bonding portion 620 a and is electrically connected to the circuit board 610.

  The semiconductor device 630 is, for example, a so-called three-dimensional memory in which a plurality of (here, four as an example) semiconductor chips 631 having a memory function are stacked. The upper and lower semiconductor chips 631 are joined by a joining portion 631a and are electrically connected. In the semiconductor device 630, the lowermost semiconductor chip 631 and the circuit board 610 are joined by a joining portion 631a, and are electrically connected to the circuit board 610. The electrical connection between the semiconductor chips 631 is realized by a conductor structure (not shown) using TSV (Through Silicon Via) technology.

  The electronic device 600 having the above-described configuration can be obtained by joining the semiconductor device 620 and the semiconductor device 630 prepared in advance to the circuit board 610. For example, when the electronic device 600 is obtained, the first to first bondings are performed between the semiconductor device 620 and the circuit board 610 (the bonding portion 620a) and between the semiconductor device 630 and the circuit board 610 (the bonding portion 631a). The joining process as described in the fourth embodiment is applied. Further, the bonding process as described in the first to fourth embodiments is applied to the bonding (bonding portion 631a) between the upper and lower semiconductor chips 631 when the semiconductor device 630 is obtained.

  That is, with respect to the semiconductor device 620 and the circuit board 610, solid-phase diffusion is performed by using an electrode provided in advance on the semiconductor device 620 and a conductor 613 on the circuit board 610 or an electrode provided thereon using the bonding process. Bonding is performed to form a bonding portion 620a. As for the semiconductor device 630 and the circuit board 610, the electrodes provided in advance in the semiconductor device 630 and the conductors 613 of the circuit board 610 or the electrodes provided thereon are formed by solid phase diffusion bonding using the above bonding process. Bonding is performed to form a bonding portion 631a. In addition, for the upper and lower semiconductor chips 631 of the semiconductor device 630, an electrode provided in advance on the upper semiconductor chip 631 and an electrode provided in advance on the lower semiconductor chip 631 are combined using the above bonding process. Bonding is performed by solid phase diffusion bonding to form a bonding portion 631a.

By using the above bonding process, it is possible to realize the electronic device 600 and the semiconductor device 630 that are excellent in bonding reliability and quality.
Regarding the embodiment described above, the following additional notes are further disclosed.

(Supplementary note 1) The first outer surface of the first electrode of the first electronic component in which the first metal is used and the first outer surface is provided with the first metal branch-shaped first oxide, and the second electronic component Contacting the second outer surface of the second electrode using the second metal,
Reducing the first oxide of the first outer surface in contact with the second outer surface;
Applying a load pressing one against the other to the first electrode and the second electrode in contact with the first outer surface and the second outer surface. An electronic device manufacturing method comprising:

(Supplementary Note 2) The second electrode has a branch-like second oxide of the second metal on the second outer surface,
The step of bringing the first outer surface and the second outer surface into contact includes a step of engaging the branch-shaped first oxide and the second oxide,
The electronic device manufacturing method according to claim 1, wherein the step of reducing the first oxide includes a step of reducing the second oxide together with the first oxide.

  (Appendix 3) The step of bringing the first outer surface and the second outer surface into contact includes a step of bringing a resin into contact with a gap between the first outer surface and the second outer surface. Or the manufacturing method of the electronic device of 2.

  (Supplementary Note 4) The electronic device according to any one of supplementary notes 1 to 3, wherein the step of reducing the first oxide includes a step of reducing the first oxide using a reducing gas. Production method.

  (Supplementary Note 5) The step of bringing the first outer surface and the second outer surface into contact includes a step of bringing a carbon paste into contact with a gap between the first outer surface and the second outer surface. A method for manufacturing the electronic device according to 1 or 2.

  (Supplementary note 6) The electronic device according to supplementary note 5, wherein the step of reducing the first oxide includes a step of heating the first electrode, the carbon paste, and the second electrode in the atmosphere. Production method.

  (Appendix 7) Prior to the step of bringing the first outer surface and the second outer surface into contact with each other, the first metal provided in a predetermined portion of the first electronic component is wet-treated to thereby form the first outer surface on the first outer surface. The method for manufacturing an electronic device according to any one of appendices 1 to 6, further comprising a step of forming the first electrode provided with the first oxide.

  (Supplementary Note 8) The step of applying the load includes a step of crushing the first oxide that is provided on the first outer surface, contacts the second outer surface, and is reduced to the second outer surface side. A method for manufacturing an electronic device according to any one of appendices 1 to 7, wherein:

(Supplementary Note 9) a first electronic component having a first electrode in which a first metal is used;
A second electronic component having a second electrode in which a second metal is used,
The first electrode is directly joined to the second electrode;
An electronic device, wherein the branch-shaped first crystal grains provided on the bonding surface of the first electrode with the second electrode are metal-bonded to the second electrode.

  (Supplementary note 10) The supplementary note, wherein the branch-like first crystal grains of the first electrode and the branch-like second crystal grains of the second electrode are metal-bonded in an intertwined state. 9. The electronic device according to 9.

(Additional remark 11) The said 1st crystal grain is continuing the 3rd crystal grain of the base material of the said 1st electrode, The electronic device of Additional remark 9 or 10 characterized by the above-mentioned.
(Supplementary Note 12) a substrate;
An electrode provided on the substrate and made of metal;
An electronic component comprising: the metal branch-like oxide provided on an outer surface of the electrode.

1, 1a, 600 Electronic device 10a, 10b, 10c, 20a, 20b, 20c, 100, 200, 200a Electronic component 11a, 11b, 11c, 21a, 21b, 21c, 110, 210, 210a Electrode 12c, 22c, 131, 231, 231a Circuits 13a, 13b, 13c, 23a, 23b, 23c, 130, 230, 230a Main body 30a, 30b Solder 40c Short 41c, 42c Damage 43c, 44c, 620a, 631a Joint 111, 211, 211a Outer surface 112, 212, 320 Oxide 113, 213 Protrusion 114, 214 Metal 310 Gap 400 Resin 500 Carbon paste 610 Circuit board 611 Front surface 612 Back surface 613, 614, 615 Conductor 616 Bump 620, 630 Semiconductor device 631 Semiconductor chip Flop

Claims (6)

The first outer surface of the first electrode of the first electronic component in which the first metal is used and the first outer surface is provided with the first metal branch-shaped first oxide, and the second electronic component, Contacting the second outer surface of the second electrode made of metal;
Reducing the first oxide of the first outer surface in contact with the second outer surface;
Applying a load pressing one against the other to the first electrode and the second electrode in contact with the first outer surface and the second outer surface. An electronic device manufacturing method comprising: The second electrode has a branch-shaped second oxide of the second metal on the second outer surface,
The step of bringing the first outer surface and the second outer surface into contact includes a step of engaging the branch-shaped first oxide and the second oxide,
2. The method of manufacturing an electronic device according to claim 1, wherein the step of reducing the first oxide includes a step of reducing the second oxide together with the first oxide.   3. The step of bringing the first outer surface and the second outer surface into contact includes a step of bringing a resin into contact with a gap between the first outer surface and the second outer surface. The manufacturing method of the electronic device of description.   3. The step of bringing the first outer surface and the second outer surface into contact includes a step of bringing a carbon paste into contact with a gap between the first outer surface and the second outer surface. The manufacturing method of the electronic device as described in 1 .. A first electronic component having a first electrode using a first metal;
A second electronic component having a second electrode in which a second metal is used,
The first electrode is directly joined to the second electrode;
An electronic device, wherein the branch-shaped first crystal grains provided on the bonding surface of the first electrode with the second electrode are metal-bonded to the second electrode. A substrate,
An electrode provided on the substrate and made of metal;
An electronic component comprising: the metal branch-like oxide provided on an outer surface of the electrode.

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