JP2016151578A - Production apparatus for optical base material and production method of optical base material - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a production apparatus for an optical base material and a production method of the optical base material, by which a series of processes applied to a surface of an optical base material, from the formation of a rugged structure to the formation of a flat part, can be performed in the same production apparatus.SOLUTION: A production apparatus (30) for an optical base material includes: a bonding section (31) where a photosensitive base material (10) comprising a support body having a rugged structure formed on a surface thereof and a resist layer deposited on the surface of the support body is bonded to a substrate (20) to form a laminate in such a way that a major surface side of the resist layer opposite to the support body is bonded; a peeling section (32) where the support body is peeled from the laminate; and an exposure section (33) where an exposed region and a non-exposed region in the resist layer disposed on the substrate are formed.SELECTED DRAWING: Figure 1

Description

  The present invention relates to an optical substrate manufacturing apparatus and an optical substrate manufacturing method.

  It is known that when a fine uneven structure is formed on the light extraction surface of an optical semiconductor element, the light extraction efficiency is improved. On the other hand, the electrode pad forming part of the semiconductor element is preferably provided in a flat part. For example, Patent Document 1 discloses an invention for transferring a concavo-convex structure to the surface of a molded product, but does not disclose the point of forming a flat portion together with the concavo-convex structure. Further, conventionally, a series of processes from formation of a concavo-convex structure to formation of a flat portion has not been performed in the same manufacturing apparatus. Since a general optical semiconductor element is manufactured in a single-wafer configuration, if the formation of the concavo-convex structure and the formation of the flat portion are carried out with different apparatuses, it only requires extra time for sample removal and attachment with each apparatus. In addition, there is a problem that the yield is reduced due to the adhesion of foreign matter due to transfer between apparatuses.

JP 2011-020272 A

  The present invention has been made in view of such problems, and an optical substrate capable of performing a series of processes for surface processing of an optical substrate from formation of a concavo-convex structure to formation of a flat portion in the same manufacturing apparatus. A material manufacturing apparatus and a manufacturing method thereof are provided.

  The optical substrate production apparatus of the present invention is a photosensitive substrate having a support having a concavo-convex structure formed on a surface thereof and a resist layer laminated on the surface of the support, relative to the support of the resist layer. The main surface side to be bonded to the substrate to form a laminate, a peeling portion for peeling the support from the laminate, and the resist layer disposed on the substrate to be exposed and non-exposed. And an exposure unit that forms an exposure region.

  In this invention, it is preferable that the said exposure part is comprised with a direct drawing apparatus. Or in this invention, it is preferable that the said exposure part has a light source and an exposure mask. Moreover, in this invention, it is preferable to have a heating part further.

  Moreover, in this invention, it is preferable that the said peeling part is arrange | positioned between the said bonding part and the said exposure part.

  Moreover, in this invention, it is preferable that the said peeling part is arrange | positioned following the said exposure part.

  In the method for producing an optical base material according to the present invention, the main surface side of the photosensitive base material, which is formed by laminating a resist layer on the surface of the support having the concavo-convex structure, is opposed to the support of the resist layer. Including a bonding step of forming a laminated body by bonding, a peeling step of peeling the support from the laminated body, and an exposure step having an exposed region and a non-exposed region with respect to the resist layer. It is characterized by.

  According to the present invention, the step of leaving the resist layer in the exposed region where the concavo-convex structure is transferred to the surface by removing the non-exposed region of the resist layer by development, and the concavo-convex structure being transferred And removing the resist between the respective convex portions of the resist layer in the exposed region, thereby forming a concavo-convex region and the flat surface on the surface of the substrate.

  Alternatively, in the present invention, by removing the exposed region of the resist layer by development, the step of leaving the resist layer in the non-exposed region where the concavo-convex structure is transferred to the surface on the surface of the substrate; It is preferable to include a step of removing the resist between the convex portions of the resist layer in the transferred non-exposed region to form a concavo-convex region and the flat surface on the surface of the substrate.

  According to the present invention, it is possible to perform a series of processes for surface processing of an optical base material from formation of a concavo-convex structure to formation of a flat portion in the same manufacturing apparatus. This makes it possible to shorten the process time and improve the yield. As a result, the production efficiency of the optical substrate can be improved.

It is a whole lineblock diagram of the manufacture device of the optical substrate concerning this embodiment. It is the schematic which shows the formation process of the photosensitive base material which concerns on this Embodiment. It is process drawing for demonstrating the process of forming a fine pattern with respect to a to-be-processed object using the manufacturing apparatus of the photosensitive base material and optical base material which concern on this Embodiment. It is the schematic of fine concavo-convex pattern formation to the board | substrate concerning this Embodiment. It is the schematic of fine concavo-convex pattern formation to the board | substrate concerning this Embodiment. It is the schematic of fine concavo-convex pattern formation to the board | substrate concerning this Embodiment. It is the schematic of fine concavo-convex pattern formation to the board | substrate concerning this Embodiment. It is a schematic diagram of the semiconductor light emitting element according to the present embodiment.

  Hereinafter, an embodiment of the present invention (hereinafter abbreviated as “embodiment”) will be described in detail with reference to FIGS. 1 to 7. In addition, this invention is not limited to the following embodiment, It can implement by changing variously within the range of the summary.

  The optical substrate manufacturing apparatus according to the present embodiment includes a resist layer support of a photosensitive substrate having a support having a concavo-convex structure formed on the surface and a resist layer laminated on the surface of the support. Bonding part that forms the laminate by pasting the opposite main surface side to the substrate, a peeling part that peels the support from the laminate, and an exposed area and a non-exposed area on the resist layer arranged on the substrate And an exposure part to be formed.

  This makes it possible to perform a series of processes for surface processing of the optical base material from formation of the concavo-convex structure to formation of a flat portion in the same manufacturing apparatus. As a result, the process time can be shortened and the yield can be improved, and the production efficiency of the optical substrate can be improved.

  FIG. 1 is an overall configuration diagram of an optical substrate manufacturing apparatus according to the present embodiment. The optical substrate manufacturing apparatus 30 includes a bonding unit 31, a peeling unit 32, and an exposure unit 33. As shown in FIG. 1, the manufacturing apparatus 30 includes a feed roller 34 that feeds a photosensitive base material to be described later. The delivery roller 34 delivers the photosensitive substrate at a predetermined speed.

  As shown in FIG. 1, the bonding unit 31 is provided further downstream in the flow direction MD than the feed roller 34. The bonding part 31 is provided with a pressing part (not shown), and presses the photosensitive base material to the object to be processed (substrate) 20. Thereby, the laminated body which has the photosensitive base material and the to-be-processed object 20 is comprised.

  The peeling part 32 is provided downstream of the bonding part 31 in the flow direction MD. In the peeling part 32, the support body which is one structure of the photosensitive base material is peeled from a laminated body. As shown in FIG. 1, the support peeled off by a peeling roller (not shown) can be taken up by a take-up roller 35. When outgas is generated from the resist layer of the photosensitive substrate during exposure, there is a risk of deformation or defects of the concavo-convex structure transferred to the resist layer due to outgas, and it is better to peel the support first without undulations. Therefore, the peeling part 32 may be installed in front of the exposure part 33. The peeling part 32 may be placed either before or after the exposure part 33 as long as only the support can be peeled from the laminated body. The photocuring property of the resist layer, the adhesion between the resist layer and the object to be processed 20, and the defect Can be selected from the viewpoint of suppression. 1A shows the case where the peeling unit 32 is in the front stage of the exposure unit 33, and FIG. 1B shows the case where the peeling unit 32 is in the rear stage of the exposure unit 33.

  As shown in FIG. 1A, an exposure unit 33 is provided downstream of the peeling unit 32 in the flow direction MD. In the exposure unit 32, the resist layer of the photosensitive substrate is exposed to active light to form an exposed area and a non-exposed area. As described above, when there is a possibility that outgas is generated from the resist layer at the time of exposure and a concavo-convex structure defect may be generated, it is preferable that the exposed portion 33 is arranged after the peeled portion 32, and foreign matter on the resist layer is removed. When there is a concern about adhesion, or when no outgas is generated from the resist layer during exposure, it is preferable to dispose a peeling portion 32 subsequent to the exposure portion 33 as shown in FIG. 1B. Here, “following” includes not only the case where the exposure unit 33 and the peeling unit 32 are continuously arranged, but also the case where another configuration is inserted between the exposure unit 33 and the peeling unit 32. For example, “the peeling part 32 is arranged following the exposure part 33” means that the peeling part 33 is arranged after the exposure part 32.

  The photosensitive substrate itself is used as a carrier film for the object to be processed 20 until the support peeling process. However, since the support is peeled from the laminated body at the peeling portion 32, the substrate after peeling the support is removed. The processing body 20 is conveyed by a holding mechanism such as a conveyor. Moreover, it is preferable that only the non-recessed structure forming surface or the periphery of the stacked body is held so that the laminated body after the support has been peeled does not come into contact with the uneven structure forming surface.

  Here, the photosensitive substrate 10 according to the present embodiment will be described. FIG. 2 is a schematic view showing a photosensitive substrate forming process according to the present embodiment.

  As a process for forming the photosensitive substrate 10, first, as shown in FIG. 2A, the first resist layer 12a is filled into the recess 13a of the concavo-convex structure 13 of the support 11. The support 11 is, for example, a film-shaped or sheet-shaped molded body. The first resist layer 12a is made of, for example, a sol-gel material. Here, the film form means a continuous roll form, and the sheet form means a sheet form.

  Next, as shown in FIG. 2B, a second resist layer 12 b is formed on the concavo-convex structure 13 including the first resist layer 12 a of the first stacked body I. The second resist layer 12b is used for patterning the workpiece 20 as will be described later. The second resist layer 12b is made of, for example, a photocurable resin, a thermosetting resin, or a thermoplastic resin.

  As shown in FIG. 2B, the photosensitive substrate 10 according to the present embodiment includes a support 11 having an uneven structure 13 and a resist layer 12 laminated on the surface on which the uneven structure 13 is formed. The The concavo-convex structure has a plurality of concave portions 13a and convex portions 13b. The photosensitive base material 10 is filled with a first resist layer 12a inside a concave portion of a support 11 having a concavo-convex structure 13 on the surface. A second resist layer 12b is formed so as to cover the first resist layer 12a. The second resist layer 12 b may be provided inside the concave portion of the support 11. The second resist layer 12b, which is the outermost layer of the resist layer laminated on the concavo-convex structure of the support 11, is formed so as to cover the surface of the convex portion 13b of the concavo-convex structure 13.

  In addition, in the manufacturing apparatus of the optical base material which concerns on this Embodiment, when using the film-like photosensitive base material 10, the sheet-like photosensitive base material 10 can be used. In addition, in the bonding part 31, the surface to be bonded to the object to be processed (substrate) 20 is an outermost layer of the resist layer 12, for example, an exposed surface of the second resist layer 12b.

  In addition, as shown in FIG. 2C, the resist layer can be three layers, and the third resist layer 12c can be provided between the first resist layer 12a and the second resist layer 12b. Alternatively, the third resist layer 12c may be provided on the convex portions of the second resist layer 12b and the concavo-convex structure 13.

  Furthermore, as shown to FIG. 2D, when using the film-like photosensitive base material 10, it is preferable to comprise the cover film 14 above the 2nd resist layer 12b. For example, the cover film 14 protects the second resist layer 12b and is not essential.

  Next, the optical base material manufacturing apparatus according to the present embodiment will be described in more detail.

  When the photosensitive substrate 10 is in the form of a film, it is unwound by the feed roller 34 and taken up by the take-up roller 35. In other words, the photosensitive substrate 10 and the workpiece 20 are pressed in the downstream of the feed roller 34 in the downstream direction of the flow direction MD, and further in the downstream of the downstream direction of the MD in the flow direction MD and the winding roller 35. In the preceding stage, the above-described support is peeled off.

  Furthermore, the to-be-processed object 20 can move with conveyance of the photosensitive base material 10 between the said crimping | compression-bonding and peeling. In other words, the photosensitive substrate 10 functions as a carrier for the object 20 to be processed. When the sheet-like photosensitive substrate 10 is used, the above-described steps are performed in the same manner as the film-like photosensitive substrate 10 by separately feeding a carrier film and feeding it from the roller 34 and winding it by the winding roller 35. I can do it.

(Pasting part)
In this Embodiment, in the bonding part 31, the photosensitive base material 10 is stuck to the to-be-processed object 20 with a pressure. FIG. 3 is a process diagram for explaining a process of forming a fine pattern on an object to be processed using the photosensitive substrate and optical substrate manufacturing apparatus according to the present embodiment.

  The to-be-processed object 20 shown to FIG. 3A is supplied to the bonding part 31 by the to-be-processed object supply part 21 before the bonding part 31 (refer FIG. 1). About the mechanism of the to-be-processed object supply part 21, if the to-be-processed object 20 can be supplied to the bonding part 31, it will not specifically limit.

  The bonding part 31 is provided with a pressing part (not shown), and the second resist layer 12b of the photosensitive substrate 10 is exposed on the main surface of the object 20 as shown in FIG. 3B. The surface is pressed against the main surface of the object 20 to be processed. As a result, the laminated body 15 formed by laminating the photosensitive substrate 10 and the target object 20 can be obtained. In FIG. 1, the target object 20 is illustrated on the upper surface of the photosensitive substrate 10, but in FIG. 3B, the target object 20 is illustrated as a photosensitive group in order to facilitate the description of FIG. 4 and subsequent figures. The figure was arranged on the lower surface of the material 10.

  The object 20 is a flat inorganic substrate, for example, a nitride semiconductor substrate, a sapphire substrate, a SiC (silicon carbide) substrate, a Si (silicon) substrate, or a spinel substrate. Examples of the pressure bonding method include lamination, and thermal lamination is particularly preferable.

  The pressing method is not particularly limited, and a general method such as a pressure roller or an elastic press can be used. However, air entrainment and stress relaxation between the photosensitive substrate 10 and the object to be processed 20 can be used. From this point of view, it is preferable to use a pressure roller. At this time, the pressure roller is preferably an elastic roller from the viewpoint of pressing uniformity of the photosensitive substrate 10. The surface material of the elastic roller is silicone rubber, nitrile rubber, fluoro rubber, polyisoprene (natural rubber), polybutadiene, polyvinyl acetate, polyethylene, polypropylene, nylon 6, nylon 66, polyethylene terephthalate, polyvinyl chloride, polychlorinated. Examples include vinylidene, polytetrafluoroethylene, polyvinylidene fluoride, polymethyl methacrylate, and polystyrene. In addition, the pressure roller is heated so that the adhesion between the object to be processed 20 and the second resist layer 12b can be improved by increasing the uniformity of the pressure of the pressure roller during pressure bonding and promoting the fluidity of the resist. It is preferable that it can be used.

  The holding unit (not shown) that holds the object to be processed 20 is not particularly limited as long as the photosensitive substrate 10 does not contact the surface to be pressure-bonded to the object to be processed 20. In order to suppress the positional displacement and vibration of the substrate and to obtain the uniformity of pressing at the time of pressure bonding, the holding portion is formed with a recess that is close to the shape of the object to be processed 20 and whose thickness is equal to or less than the thickness of the object to be processed 20. Preferably it is. The decompression chuck is preferably provided in the holding portion because the substrate can be detached by suppressing the displacement and vibration of the workpiece 20 and releasing the decompression. Furthermore, it is preferable that the holding part can be heated. Thereby, the fluidity | liquidity of the resist layer 12 at the time of pressure bonding can be improved, and the precision of pressure bonding improves.

(Cooling section)
A cooling part may be provided after the pressure bonding. When the support 11 is peeled off, the photosensitive substrate 10 is preferably cooled to 5 to 80 ° C., more preferably 18 to 30 ° C., and then moved to the peeling portion. . In addition, about the cooling method, if the photosensitive base material 10 is cooled in the said temperature range, it will not specifically limit.

(Peeling part)
In the present embodiment, the peeling unit 32 is not particularly limited as long as only the support 11 can be peeled from the laminate 15 in a state where the photosensitive substrate 10 is pressure-bonded to the object to be processed 20. It may be installed either before or after 33 (see FIGS. 1A and 1B).

  FIG. 4 is a schematic diagram of forming fine uneven patterns on the substrate according to the present embodiment. In the peeling portion 32, the support 11 is peeled from the resist layer 12 as shown in FIG. 4. As a result, the intermediate body 21 including the object to be processed 20, the second resist layer 12b, and the first resist layer 12a is obtained.

  The peeling part 32 will not be specifically limited if the support body 11 can be peeled from the laminated body 15 which consists of the photosensitive base material 10 and the to-be-processed body 20. FIG. That is, in the stacked body 15, the target object 20 is fixed and hardly moves in the vertical direction with respect to the main surface, and the support 11 is separated from the resist layer 12. In particular, if the peeling portion 32 can be peeled off using the flow of the photosensitive substrate 10, it is preferable because the twist of the photosensitive substrate 10 can be further suppressed and the transfer accuracy can be improved. (Not shown) and peeling edges can be used. For example, the exposed surface of the workpiece 20 of the laminate 15 is held and fixed, and the flow direction MD of the photosensitive substrate 10 is changed by a peeling roller or edge, so that the support 11 is peeled off with high transfer accuracy. can do.

  In order to suppress the displacement of the object to be processed 20 at the time of peeling, it is preferable that the peeling part has a mechanism that can hold the object to be processed 20. For example, a decompression chuck, an electrostatic chuck, or one that holds at least a part of a substrate, or a cassette support can be used.

  In FIG. 4, the resist layers 12 a and 12 b of the intermediate body 21 are shown as upper surfaces after the object 20 is peeled off, and flow is performed in the subsequent steps. However, the resist layers 12 a and 12 b do not come into contact with the resist layers 12 a and 12 b. As long as the mechanism does not damage the 12b, there is no particular limitation.

(Exposure part)
In the present embodiment, the exposure unit 33 exposes the photosensitive resist layers 12a and 12b to active light using an exposure device 50 as shown in FIG. An exposure region 131 can be formed. In the resist layers 12a and 12b, a portion where the active light is exposed is an exposed region, and a portion where the active light is not exposed is a non-exposed region.

  After the peeling of the support 11 at the peeling portion 32, a step of forming the exposure region 132 and the non-exposure region 131 at the exposure portion 33 is performed. As described above, this step is performed on the support 11 at the peeling portion 32. It may be performed before or after peeling (see FIGS. 1A and 1B). As shown in FIG. 1B, when the exposure process is performed before the support 11 is peeled off, the photosensitive substrate 10 can be used as a carrier film for the object to be processed 20 in the exposure unit 33.

  If desired, the exposure can be performed after the support 11 is peeled off. There are two types of exposure: a method using an exposure mask and a light source and a maskless direct drawing apparatus. When using an exposure mask, a contact exposure method in which the exposure mask is brought into contact with the resist layer 12a, and a resist layer 12a There is a proximity exposure method in which the exposure mask is arranged at a distance of 5 μm to 100 μm. At that time, the exposure amount is determined by the light source illuminance and the exposure time, and may be measured using a light meter. In general, when an exposure mask is used, batch exposure is possible, so that the processing time is shorter than that of direct drawing, and reduction projection exposure using a stepper has advantages of high photolithography resolution. In maskless exposure, an exposure mask is not used and exposure is performed directly on the substrate by a drawing apparatus. As the light source, a semiconductor laser having a wavelength of 350 nm to 410 nm, an ultrahigh pressure mercury lamp, a metal halide lamp, or the like is used. The drawing pattern is controlled by a computer, and the exposure amount in this case is determined by the illuminance of the exposure light source and the moving speed of the substrate or light source. In general, since it is not necessary to produce a photomask in direct drawing, there is an advantage that it is possible to cope with various patterns with less additional cost other than the apparatus.

  The relationship between exposure and peeling of the support 11 will be described. As an advantage when the support 11 is not peeled before exposure, there is no possibility that the exposure mask and the resist layer 12 come into contact with each other. As a demerit, since the distance between the exposure mask and the resist layer 12 is increased by the thickness of the support 11, the resolution of photolithography may be reduced.

  As a merit when the support 11 is peeled off before exposure, since the distance between the exposure mask and the resist layer 12 can be shortened, photolithography resolution is easily obtained. As a demerit, there is a possibility that the exposure mask and the resist layer 12 are in direct contact and the exposure mask is contaminated.

(Heating part)
A heating unit (not shown) for preheating the photosensitive substrate 10 may be provided before the bonding unit 31. As a result, the fluidity of the resist layers 12a and 12b is increased, and the pressure bonding time between the photosensitive substrate 10 and the object to be processed 20 at the bonding portion 31 is shortened. In addition, heating to heat the object to be processed 20 or the photosensitive substrate 10 in order to promote the chemical reaction of the resist in the exposed portion after the exposure and improve the adhesion between the second resist layer 12b and the object to be processed 20. May be provided.

  The obtained intermediate 21 is moved to a collection unit (not shown) by conveyance and collected. Thereafter, the intermediate body 21 is temporarily stored, or is immediately sent to a development process and a dry etching process of the object to be processed which will be described later.

(Development process)
Subsequently, as shown in FIG. 6B, the non-exposed region 131 of the resist layers 12a and 12b is removed by development. Thereby, an uneven | corrugated area | region is left in a part of to-be-processed body 20, and the main surface 20a of the to-be-processed body 20 will be in the state exposed in the other part. In the case where the resist layers 12a and 12b are positive types, the portions removed by development are the reverse of the above.

(Etching process)
A process of etching the object to be processed 20 using the resist layers 12a and 12b as a mask will be described.

  FIG. 7A shows a state in which the fine pattern mask layer 133 is formed on the main surface 20 a of the workpiece 20. The first resist 12a is used as a mask, and etching is performed under the condition that only the second resist layer 12b is etched without etching the object to be processed 20, whereby the second resist layer 12b and the first resist shown in FIG. A mask layer (fine pattern mask layer 133) composed of the resist layer 12a is formed on the main surface 20a of the object 20 to be processed.

  As shown in FIG. 7B, the object 20 is etched using the fine pattern mask layer 133 formed only in the exposure area 132 as a mask, so that the main surface 20a of the object 20 has the uneven area 7 and the flat surface 8 the same. A fine pattern is formed in the plane.

  As the etching of the object 20 to be processed, a generally known etching method such as wet etching or dry etching can be used, but dry etching is preferable from the viewpoint of processing accuracy of a fine shape. Various etching conditions can be designed depending on the material of the object 20 and the resist layers 12a and 12b. For example, when dry etching is used, the following etching conditions are exemplified.

From the viewpoint of etching the object 20 to be processed, etching using a chlorine-based gas or a chlorofluorocarbon-based gas can be performed. Oxygen gas, argon gas, or a mixed gas of oxygen gas and argon gas may be added to the chlorine-based gas. Uses a mixed gas containing at least one kind of CFC-based gas (CxHzFy: x = 1 to 4, y = 1 to 8, z = 0 to 3 in the range) that is easy to reactively etch the substrate To do. Examples of the fluorocarbon gas include CF ₄ , CHF ₃ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₆ , C ₄ F ₈ , CH ₂ F ₂ , and CH ₃ F. Furthermore, in order to improve the etching rate of the substrate, a gas in which Ar gas, O ₂ gas, and Xe gas are mixed in a fluorocarbon gas to 50% or less of the total gas flow rate is used. When etching a substrate that is difficult to be reactively etched with chlorofluorocarbon gas (a substrate that is difficult to etch) or a substrate on which highly depositable reactants are generated, at least one of chlorine-based gases that can be reactively etched A mixed gas containing one species is used. Examples of the chlorine-based gas include Cl ₂ , BCl ₃ , CCl ₄ , PCl ₃ , SiCl ₄ , HCl, CCl ₂ F ₂ , and CCl ₃ F. Further, in order to improve the etching rate of the difficult-to-etch substrate, oxygen gas, argon gas, or a mixed gas of oxygen gas and argon gas may be added to the chlorine-based gas.

  Further, when the fine pattern mask layer 133 remains on the target object after dry etching of the target object 20, a step of removing the mask layer may be included. As a method of removing the mask layer from the surface of the object to be processed 20, a method of selectively etching the mask layer by dry etching, a method of dissolving the surface of the object to be processed 20 by wet etching, and peeling the mask layer, an organic solvent And a method in which the mask layer is swollen or dissolved in an alkaline stripping solution, an acidic aqueous solution, or the like, and a method in which the mask layer is decomposed and removed with an oxidizing agent or the like. A method in which the workpiece 20 is not damaged is preferable.

  A semiconductor light-emitting element can be formed using the above-described object 20 having the concavo-convex region 7 and the flat surface 8 in the same plane as an optical substrate.

  FIG. 8 is a schematic diagram of the semiconductor light emitting device according to the present embodiment. FIG. 8A is a schematic cross-sectional view of the semiconductor light emitting device according to this embodiment, and FIG. 8B is a schematic plan view of the semiconductor light emitting device.

  As shown in FIG. 8A, the semiconductor light emitting device 80 according to the present embodiment is formed on the base 1, the first semiconductor layer 2 provided on the surface (upper surface) of the base 1, and the surface of the first semiconductor layer 2. The light emitting layer 3 formed, the second semiconductor layer 4 formed on the surface of the light emitting layer 3, and the light emission surface side of the light emitting layer 3 of the second semiconductor layer 4 (the surface side of the second semiconductor layer 4) And a microstructure layer 6 formed on the substrate. The substrate 1 may not be formed.

  As shown in FIG. 8A, the light emitting layer 3 is interposed between the first semiconductor layer 2 and the second semiconductor layer 4.

  As shown in FIG. 8A, the surface of the fine structure layer 6 (upper surface; the surface away from the light emitting layer 3) has an uneven region 7 composed of a plurality of convex portions 16 or concave portions, and a semiconductor light emitting element 80. A flat surface 8 that can be used as an electrode forming portion is formed. As shown in FIG. 8A, the electrode pad 5 is provided on the flat surface 8.

  Further, in FIG. 8A, the electrode pad 5 is provided on the p-plane side of the surface of the microstructure layer 6 that is the light output surface, and the flat surface 8 is formed in an area that does not hinder light output.

  As shown in FIGS. 8A and 8B, the planes of the light emitting layer 3, the second semiconductor layer 4 and the fine structure layer 6 are formed smaller than the base 1, and the first semiconductor layer 2 formed on the surface of the base 1 is formed. A part of the light emitting layer 3, the second semiconductor layer 4, and the fine structure layer 6 are exposed to extend outward from the side portions. An electrode pad 9 is disposed on the exposed surface of the first semiconductor layer 2. The electrode pad 5 is an anode electrode, and the electrode pad 9 is a cathode electrode.

  According to the present embodiment, the light extraction efficiency can be improved by providing the uneven region 7 on the surface of the fine structure layer 6 on the light emitting surface side. Further, since the uneven surface 7 is not provided over the entire surface of the fine structure layer 6 but the flat surface 8 is provided in a part thereof, the flat surface 8 can be used as a formation part of the electrode pad 5, and The electrode pad 5 can be installed on the flat surface 8. The flat surface 8 is preferably sized so as not to hinder the reduction of the light extraction efficiency, and is preferably disposed closer to the end as shown in FIG. 8B.

(Uneven structure)
In the present embodiment, the shape of the concavo-convex structure 13 formed on the support 11 is not particularly limited. For example, a line-and-space structure in which a plurality of fence-like bodies are arranged, a plurality of dot (convex parts, protrusions) -like structures And a hole structure in which a plurality of hole (concave) -like structures are arranged can be employed. Examples of the dot structure and the hole structure include a cone, a cylinder, a truncated cone, a quadrangular pyramid, a quadrangular column, a hexagonal pyramid, a hexagonal column, a polygonal pyramid, a polygonal column, a double ring shape, and a multiple ring shape structure. . These shapes include a shape in which the outer diameter of the bottom surface is distorted and a shape in which the side surface is curved. The dot structure is a structure in which a plurality of convex portions are arranged independently of each other. That is, each convex portion 13b is separated by a continuous concave portion. In addition, each convex part 13b may be smoothly connected by the continuous recessed part. On the other hand, the hole structure is a structure in which a plurality of recesses 13a are arranged independently of each other. That is, each recessed part 13a is separated by the continuous convex part 13b. In addition, each recessed part 13a may be smoothly connected by the continuous convex part 13b.

  The plurality of concavo-convex structures 13 may be arranged at random or may have a periodic arrangement pattern, but preferably has a periodic arrangement pattern from the viewpoint of increasing the diffraction effect. Examples of the periodic array pattern include a regular hexagonal array, a hexagonal array, a quasi-hexagonal array, a quasi-tetragonal array, a tetragonal array, and a regular tetragonal array, but are not limited thereto. Further, a part of the in-plane arrangement may be random or may have a plurality of arrangement patterns.

  Regarding the size of the concavo-convex structure 13, it is preferable that the average interval between the concavo-convex structures 13 is 0.1 μm to 5 μm and the height is 0.1 μm to 3 μm. When the average interval and height of the concavo-convex structure 13 are within this range, the effect of diffracting incident light is sufficiently obtained.

(Support)
Examples of the support 11 include a resin, metal, and glass having a concavo-convex structure 13 formed on the surface. Examples of the resin include polymethyl methacrylate resin, polycarbonate (hereinafter PC) resin, polystyrene (hereinafter PST) resin, Cycloolefin (hereinafter referred to as COP) resin, crosslinked polyethylene resin, polyvinyl chloride resin, polyarylate (hereinafter referred to as PAR) resin, polyphenylene ether resin, modified polyphenylene ether resin, polyetherimide (hereinafter referred to as PEI) resin, polyether sulfone (hereinafter referred to as PES) ) Resin, polysulfone resin, polyether ketone resin, polyethylene terephthalate resin (PET), polyethylene naphthalate (hereinafter PEN) resin, polyethylene (hereinafter POM) resin, polypropylene resin, polybutylene terephthalate resin, aromatic Polyester resins, polyacetal resins, polyamide resins, triacetate cellulose (hereinafter TAC) resin or a silicone resin or an acrylic, epoxy, UV curable resin or thermosetting resins such as urethane can be cited.

  The method for forming the concavo-convex structure 13 is not particularly limited, and examples include thermal transfer using the support 11 and a master mold, thermal transfer or UV transfer using a thermosetting resin or UV curable resin and a master mold, and lithography. A general resin can be used as the cured resin. When the resist layer 12a, 12b is laminated on the support 11 to form the photosensitive substrate 10, and the substrate 11 is pressure-bonded and peeled off, the support 11 has good bendability so that it can be easily peeled off. It is preferable that the transmittance at the exposure wavelength is higher from the viewpoint of exposure.

(Resist layer)
Next, the resist layer 12 will be described in detail. As shown in FIG. 2B, the resist layer 12 includes a first resist layer 12a and a second resist layer 12b. Note that the resist layer 12 is not limited to the configuration shown in FIG. 2B, and may be composed of three or more layers as shown in FIG. 2C. Alternatively, the resist layer 12 may be a single layer.

  The material constituting the resist layer 12 is not particularly limited as long as the etching selectivity described later is satisfied, and various resins, inorganic precursors, inorganic condensates, plating solutions (such as chromium plating solutions), metals that can be diluted in a solvent, metal An oxide filler, metal oxide fine particles, HSQ, SOG (spin on glass), etc. can be selected as appropriate. The resist layer 12 preferably contains a photosensitive resin material in that a fine pattern resist layer having the concavo-convex region 7 and the flat surface 8 in the same plane can be formed by exposure and development processes.

As the photosensitive resin material, a compound that generates an active substance in response to light, such as a photopolymerization initiator, a photoacid generator, or a photobase generator, can be used. Preferably, a photopolymerization initiator is preferable from the viewpoint of the reactivity of the photosensitive compound to light and the reactivity of the active substance generated from the photosensitive compound.

  From the viewpoint of shape accuracy in the fine pattern, the resist layer 12 is preferably a multilayer film of two or more layers. For example, when a first resist layer 12a and a second resist layer 12b as shown in FIG. 2B are provided. The following materials are preferably used.

  The material constituting the first resist layer 12a is not particularly limited as long as an etching selection ratio described later is satisfied, and the material can be appropriately selected.

  The first resist layer 12a preferably contains a metal element from the viewpoint of dry etching resistance in the formation process of the fine pattern resist layer. Furthermore, the first resist layer 12a is preferable because it contains metal oxide fine particles, which makes it easier to perform dry etching on a base material made of an inorganic material.

Although it does not specifically limit as a dilution solvent, The solvent whose boiling point of a single solvent is 40 to 200 degreeC is preferable, 60 to 180 degreeC is more preferable, and 60 to 160 degreeC is more preferable. Two or more kinds of diluents may be used.

  Further, the concentration of the material constituting the first resist layer 12a diluted with the solvent is such that the solid content of the coating film applied on the unit area is a void (recess) in the fine concavo-convex structure on the unit area (lower). If it is the density | concentration used as the volume below, it will not specifically limit.

  For dry etching used in the formation process of the fine pattern resist layer, the etching selectivity (Vm1) of the first resist layer 12a and the etching selectivity (Vo1) calculated from the etching rate (Vo1) of the second resist layer 12b described later ( Vo1 / Vm1) preferably contains a resin that satisfies 10 ≦ Vo1 / Vm1. When the etching selectivity (Vo1 / Vm1) of the first resist layer 12a and the second resist layer 12b satisfies Vo1 / Vm1> 1, this is because the first resist layer 12a is more than the second resist layer 12b. It means that it is difficult to be etched. In particular, by satisfying Vo1 / Vm1 ≧ 10, the thick second resist layer 12b can be easily processed by dry etching, and the dry etching micro-processed resist layer 12 having a fine concavo-convex structure with a high aspect ratio (first (A fine pattern consisting of the first resist layer 12a and the second resist layer 12b) can be formed on the object 20 to be processed.

  In addition, since the dry etching rate with respect to a fine resist pattern has a large influence on the fine pattern, these etching selection ratios are values measured for flat films (solid films) of various materials.

  The first resist material 12a preferably includes a sol-gel material. By including the sol-gel material, it becomes easy to fill the unevenness of the support 11 with the first resist layer 12a having good dry etching resistance, and in addition, when the second resist layer 12b is dry-etched. The ratio (Vr∥ / Vr //) of the dry etching rate (Vr⊥) in the vertical direction and the dry etching rate (Vr //) in the horizontal direction can be increased. As the sol-gel material, only a metal alkoxide having a single metal species may be used, or metal alkoxides having different metal species may be used in combination. In particular, a metal alkoxide having a metal species M1 (where M1 is at least one metal element selected from the group consisting of Ti, Zr, Zn, Sn, B, In, and Al) and a metal having a metal species Si. It is preferable to contain at least two kinds of metal alkoxides together with alkoxides. Alternatively, a material obtained by combining these sol-gel materials and a photosensitive resin material can be used as the material of the first resist layer 12a.

  From the viewpoint of dry etching resistance of the first resist layer 12a, the sol-gel material preferably contains at least two types of metal alkoxides having different metal types. Examples of combinations of metal species of two types of metal alkoxides having different metal species include Si and Ti, Si and Zr, and Si and Ta. From the viewpoint of dry etching resistance, the ratio CM1 / CSi between the molar concentration (CSi) of the metal alkoxide having Si as a metal species and the metal alkoxide (CM1) having a metal species M1 other than Si is 0.2-15. It is preferable that From the viewpoint of stability during coating and drying, CM1 / CSi is preferably 0.5 to 15. From the viewpoint of physical strength, CM1 / CSi is more preferably 5-8.

  The first resist layer 12a preferably includes an inorganic segment and an organic segment (hybrid) from the viewpoints of transfer accuracy and dry etching resistance of the first resist layer 12a. Examples of the combination include a combination of inorganic fine particles and a photosensitive resin material, a combination of an inorganic precursor and a photosensitive resin material, a combination of an organic polymer and a molecule in which an inorganic segment is bonded by a covalent bond, and the like. It is done. When a sol-gel material is used as the inorganic precursor, it is preferable to include a photosensitive resin material in addition to the sol-gel material including a silane coupling agent. In the case of a combination, for example, a metal alkoxide, a silane coupling material having a photopolymerizable group, a radical polymerization resin, and the like can be mixed. In order to further improve the transfer accuracy, silicone may be added thereto. In order to improve dry etching resistance, the sol-gel material portion may be pre-condensed in advance. The mixing ratio of the metal alkoxide containing the silane coupling agent and the photosensitive resin material is preferably in the range of 3: 7 to 7: 3 from the viewpoint of dry etching resistance and transfer accuracy. More preferably, it is in the range of 3.5: 6.5 to 6.5: 3.5.

  In the case where the wettability when the diluted first resist layer 12a is directly applied on the unevenness of the support 11 is poor, a surfactant or a leveling material may be added. Although these can use a well-known commercially available thing, it is preferable to have the functional group which can superpose | polymerize with the photosensitive resin material in the same molecule | numerator. The additive concentration is preferably 40 parts by weight or more and more preferably 60 parts by weight or more with respect to 100 parts by weight of the first resist layer 12a from the viewpoint of coatability. On the other hand, from the viewpoint of resistance to dry etching, it is preferably 500 parts by weight or less, more preferably 300 parts by weight or less, and even more preferably 150 parts by weight or less.

  On the other hand, from the viewpoint of improving the dispersibility of the first resist layer 12a and improving the transfer accuracy, when a surfactant or a leveling material is used, the concentration of these additives is 20 with respect to the first resist material 12a. It is preferable that it is below wt%. Dispersibility is greatly improved when it is 20% by weight or less, and transfer accuracy is also improved when it is 15% by weight or less, which is preferable. More preferably, it is 10% by weight or less. In particular, these surfactants and leveling materials preferably contain at least one functional group of a functional group having a carboxyl group, a urethane group, or an isocyanuric acid derivative from the viewpoint of compatibility. The isocyanuric acid derivatives include those having an isocyanuric acid skeleton and a structure in which at least one hydrogen atom bonded to the nitrogen atom is substituted with another group. As an example that satisfies these conditions, there is an OPTOOL DAC manufactured by Daikin Industries, Ltd. The additive is preferably mixed with the first resist material in a state dissolved in a solvent.

  If the material of the first resist layer 12a includes a material whose state changes in the solvent volatilization process after the dilution coating, it is estimated that the driving force of reducing the area of the material itself works at the same time. In particular, the material of the first resist layer 12 a is preferably filled into the concave portion of the support 11. Examples of the change in mode include an exothermic reaction and a change in viscosity. For example, when a sol-gel material is included, it reacts with water vapor in the air during the solvent volatilization process, and the sol-gel material undergoes polycondensation. As a result, the energy of the sol-gel material becomes unstable, so that a driving force that tries to move away from the solvent liquid surface (solvent-air interface) that decreases as the solvent is dried works, and as a result, the sol-gel material is well placed inside the mold recess. It is assumed that it will be filled.

  Although the material which comprises the 2nd resist layer 12b will not be specifically limited if the etching rate ratio (etching selection ratio) in the formation process of an above-mentioned fine pattern resist layer is satisfy | filled, It is preferable to use the photosensitive resin material.

  From the viewpoint of physical stability and handling of the first resist layer 12a during dry etching, the Tg (glass transition temperature) of the first resist layer 12a after curing is preferably 30 ° C to 300 ° C. The temperature is more preferably 60 ° C to 250 ° C.

  From the viewpoint of adhesion between the second resist layer 12b and the object to be processed 20 and between the second resist layer 12b and the first resist layer 12a, the shrinkage ratio of the second resist layer 12b by the specific gravity method is 10 % Or less, and more preferably 5% or less.

  In addition, from the viewpoint of handling when using the photosensitive substrate 10 in which the support 11, the first resist layer 12 a and the second resist layer 12 b are laminated, and bonding to the object 20, the second The resist layer 12b is preferably a thermocompressible resin typified by a dry film resist. Here, the dry film resist is an organic material including at least a binder polymer, a reactive diluent, and a polymerization initiator, and means a resin capable of thermocompression bonding. In particular, the support 11 is preferably in the form of a film (flexible sheet). In this case, the photosensitive base material 10 which consists of the support body 11, the 1st resist layer 12a, and the 2nd resist layer 12b can be produced, the cover film 14 can be match | combined, and it can wind up and collect | recover. This roll can be fed out and easily bonded to the object 20 by thermocompression bonding. Such a method of use can eliminate know-how such as filling and peeling of a nanoimprint (transfer) transfer material by using the photosensitive substrate 10 for forming a fine pattern, and does not require a special apparatus. Means. The resin that can be thermocompression bonded is preferably a resin that can be bonded at 200 ° C. or lower, and more preferably 150 ° C. or lower. For example, a known dry film resist is laminated on the support 11 and the first resist layer 12a to form a laminate of the support 11, the first resist layer 12a, and the second resist layer 12b. The dry film resist is more preferably a dry film resist containing a photosensitive resin from the viewpoint of adhesiveness with the first resist layer 12a.

(Photosensitive substrate)
As shown in FIGS. 2B and 2C, the photosensitive substrate 10 has at least two layers of resist laminated on a support 11 having an uneven structure 13 on its surface. As described above, when the roll recovered by combining the cover film 14 with the photosensitive base material 10 is set and used in the delivery portion including the delivery roller, it is pressure-bonded to the workpiece 20 at the laminating portion 31. By the time, the cover film 14 is collected by the cover film take-up roller.

  In addition, this invention is not limited to the said embodiment, It can change and implement variously. In the above-described embodiment, the size, shape, and the like illustrated in the accompanying drawings are not limited to this, and can be appropriately changed within a range in which the effect of the present invention is exhibited.

  The present invention relates to a manufacturing apparatus and an optical base material manufacturing method for manufacturing an optical base material by attaching a photosensitive base material to an optical element or an optical device, wherein a concavo-convex structure is formed on the surface of the optical base material. Since the improvement of the light extraction efficiency of the optical base material can be expected, it can be suitably applied to, for example, a liquid crystal display device (LCD), a plasma display panel (PDP), an organic EL element, an EL element, and the like.

DESCRIPTION OF SYMBOLS 11 Support body 12 Resist layer 13 Uneven structure 20 To-be-processed object (board | substrate)
DESCRIPTION OF SYMBOLS 21 To-be-processed object supply part 30 Optical base material manufacturing apparatus 31 Bonding part 32 Peeling part 33 Exposure part 34 Feeding roller 35 Winding roller

Claims (9)

The photosensitive substrate having a support having a concavo-convex structure formed on the surface and a resist layer laminated on the surface of the support, the main surface facing the support of the resist layer is bonded to the substrate. A bonding part for forming a laminate;
A peeling portion for peeling the support from the laminate;
An exposure part that forms an exposed area and a non-exposed area in the resist layer disposed on the substrate;
An apparatus for manufacturing an optical substrate, comprising:   The optical substrate manufacturing apparatus according to claim 1, wherein the exposure unit is configured by a direct drawing apparatus.   The optical substrate manufacturing apparatus according to claim 1, wherein the exposure unit includes a light source and an exposure mask.   The apparatus for manufacturing an optical substrate according to any one of claims 1 to 3, further comprising a heating unit.   The apparatus for producing an optical substrate according to any one of claims 1 to 4, wherein the peeling portion is disposed between the bonding portion and the exposure portion.   The apparatus for manufacturing an optical substrate according to any one of claims 1 to 4, wherein the peeling portion is arranged subsequent to the exposure portion. Bonding that forms a laminate by bonding the main surface side of the photosensitive base material, which is formed by laminating a resist layer on the surface of the support with the uneven structure, facing the support of the resist layer to the substrate. Process,
A peeling step of peeling the support from the laminate;
An exposure step having an exposed area and a non-exposed area with respect to the resist layer;
The manufacturing method of the optical base material characterized by including. Removing the non-exposed area of the resist layer by development, leaving the resist layer in the exposed area where the concavo-convex structure is transferred to the surface on the surface of the substrate;
Removing the resist between the convex portions of the resist layer in the exposure region to which the concavo-convex structure has been transferred, and forming the concavo-convex region and the flat surface on the surface of the substrate;
The manufacturing method of the optical base material of Claim 7 characterized by the above-mentioned. Removing the exposed region of the resist layer by development, leaving the resist layer in the non-exposed region where the concavo-convex structure is transferred to the surface on the surface of the substrate;
Removing the resist between the convex portions of the resist layer in the non-exposed region to which the concavo-convex structure has been transferred, and forming the concavo-convex region and the flat surface on the surface of the substrate;
The manufacturing method of the optical base material of Claim 7 characterized by the above-mentioned.

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