JP2016139737A - Substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing apparatus which can detect a mounting condition of a substrate by a simple constitution.SOLUTION: A substrate processing apparatus has a heat treatment unit U2 which includes: a supporter 28 for supporting a wafer W; and a lifting mechanism 30 which has a plurality of lifting pins 31 and in which the wafer W on the supporter 28 is lifted up and lowered by the plurality of lifting pins 31; and a detection mechanism 60 for detecting a mounting condition of the wafer W based on information relevant to timing of switching between a contact condition and a non-contact condition of at least one of the plurality of lifting pins 31 with the wafer W.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a substrate processing apparatus.

  The semiconductor manufacturing process includes a process performed in a state where the substrate is placed, such as a heat treatment. In such processing, the substrate mounting state may affect the processing. For example, when the substrate is tilted during heat treatment, the in-plane temperature distribution of the substrate may become non-uniform. On the other hand, Patent Document 1 discloses a heat treatment apparatus including abnormality detection means that an abnormality occurs when an integral value between the surface temperature of a heat treatment plate and a set temperature is equal to or less than a predetermined threshold value. .

JP 2009-123816 A

  The heat treatment apparatus described in Patent Document 1 detects an abnormality caused by the effect of the placement state, and does not detect the placement state. In order to identify the cause of the abnormality and improve the stability of the processing, it is desired to detect the mounting state. However, adding a mechanism for detecting the mounting state may complicate the configuration of the apparatus. Therefore, an object of the present disclosure is to provide a substrate processing apparatus that can detect the mounting state of a substrate with a simple configuration.

  A substrate processing apparatus according to the present disclosure includes a support base that supports a substrate, a plurality of lift pins, a lift mechanism that lifts and lowers the substrate on the support base by the plurality of lift pins, and at least one of the plurality of lift pins. And a detection mechanism that detects the mounting state of the substrate based on information related to the timing of switching between the contact state and the non-contact state with the substrate.

  The timing of switching between the contact state and the non-contact state between at least one of the plurality of lift pins and the substrate correlates with the distance between the contact portion and the support base. For this reason, the mounting state of the substrate can be detected based on the information regarding the switching timing. Moreover, according to this detection mechanism, since the raising / lowering pin for raising / lowering a board | substrate is utilized for the detection of the mounting state of a board | substrate, complication of an apparatus structure is suppressed. Therefore, according to the substrate processing apparatus according to the present disclosure, the mounting state of the substrate can be detected with a simple configuration.

  The detection mechanism may detect the mounting state based on information regarding a difference between a switching timing of one lifting pin and a switching timing of another lifting pin. Information on the difference between the switching timing of one lifting pin and the switching timing of another lifting pin correlates with the inclination of the substrate between the one lifting pin and the other lifting pin. For this reason, the inclination of the substrate can be detected as the mounting state of the substrate.

  The detection mechanism may use a difference between a switching timing of one lifting pin and a switching timing of another lifting pin as information regarding a shift in switching timing, and detect the mounting state based on the difference. . In this case, the tilt of the substrate can be detected with higher accuracy.

  The detection mechanism may detect the mounting state based on information regarding a switching timing in at least one of the plurality of lifting pins and a preset reference timing. In this case, it is possible to evaluate the switching timing based on the relationship with the reference timing and more clearly detect the substrate mounting state.

  The detection mechanism uses the difference between the switching timing of at least one of the plurality of lifting pins and the reference timing as information about the switching timing and the reference timing, and detects the mounting state based on the difference. Also good. By obtaining the difference between the switching timing and the reference timing, it is possible to extract only the component correlated with the substrate mounting state from the switching timing. For this reason, the mounting state of the substrate can be detected more clearly.

  The detection mechanism may detect the mounting state of the substrate based on the switching timing from the non-contact state to the contact state. When the switching from the non-contact state to the contact state, the elevating pins collide with the substrate, so that a large change is likely to occur in the elevating pins compared to when switching from the contact state to the non-contact state. For this reason, the timing of the switching can be detected more reliably.

  After the substrate is placed on the support table, the substrate is lifted again, and further includes a lift control unit for placing the substrate on the support table again, and the detection mechanism is switched when the lift mechanism lifts the substrate again. The placement state of the substrate may be detected based on the timing. In this case, the detection of the substrate mounting state based on the switching timing from the non-contact state to the contact state can be automated.

  The detection mechanism may include a vibration sensor that can detect vibration generated by the elevating pins, and may detect a switching timing based on the vibration. When the contact state and non-contact state between the lift pins and the substrate are switched, vibration occurs in the lift pins. Therefore, the switching timing can be detected with a simple configuration using a vibration sensor.

  The vibration sensor may be provided so as to detect vibration through a solid. In this case, the vibration generated in the elevating pin is detected with high sensitivity by the medium of the solid, so that the switching timing can be detected more reliably.

  The elevating mechanism may have a pin support portion that supports a plurality of elevating pins, and the vibration sensor may be provided in the pin support portion. In this case, it is possible to detect vibrations at a plurality of lifting pins with a single vibration sensor. For this reason, the apparatus configuration can be further simplified.

  The detection mechanism may have a plurality of vibration sensors corresponding to each of the plurality of lifting pins. In this case, it is possible to specify in which lifting pin the detected switching timing has occurred. For this reason, the mounting state of the substrate can be detected in more detail.

  The detection mechanism may include a plurality of sensors that respectively detect switching timings of the plurality of lift pins. In this case, it is possible to specify which lifting pin the detected switching timing is. For this reason, the mounting state of the substrate can be detected in more detail.

  The detection mechanism has a vibration sensor that can detect vibration generated by the lifting pins, and the total difference of the period when the intensity of vibration detected by the vibration sensor is greater than the first threshold is shifted in switching timing. It may be used as information regarding the mounting state, and the mounting state may be detected based on the total value of the period. The total value correlates with a shift in switching timing. Specifically, the total value increases as the shift in switching timing increases. For this reason, the inclination of the substrate can also be detected based on the total value. In addition, when the vibration generated with the switching timing of one lifting pin overlaps with the vibration generated with the switching timing of another lifting pin, it is difficult to individually detect the switching timing. There is sex. Even in such a case, the total value can be detected. For this reason, the tilt of the substrate can be detected with higher sensitivity by using the total value as a substitute characteristic for the shift of the switching timing.

  The detection mechanism may detect whether or not the mounting state is normal based on whether or not the total value is smaller than the second threshold value.

  According to the present disclosure, it is possible to detect the mounting state of the substrate with a simple configuration.

It is a perspective view which shows schematic structure of a substrate processing system. It is sectional drawing which follows the II-II line | wire in FIG. It is sectional drawing which follows the III-III line | wire in FIG. It is a schematic diagram which shows schematic structure of the heat processing unit. It is a flowchart of the heating procedure of a wafer. It is a schematic diagram which shows the relationship between the mounting state of a wafer, and the timing of switching. It is a schematic diagram which shows the relationship between the mounting state of a wafer, and the timing of switching. It is a schematic diagram which shows the modification of a heat processing unit.

[Substrate processing system]
First, an outline of the substrate processing system 1 according to the present embodiment will be described with reference to FIGS. 1, 2, and 3. As shown in FIG. 1, the substrate processing system 1 includes a coating / developing device 2 and an exposure device 3. The exposure apparatus 3 performs an exposure process for a resist film (photosensitive film). The coating / developing apparatus 2 performs a process of forming a resist film on the surface of the wafer W (substrate) before the exposure process by the exposure apparatus 3, and performs the development process of the resist film after the exposure process.

  As further shown in FIGS. 2 and 3, the coating / developing apparatus 2 includes a carrier block 4, a processing block 5, and an interface block 6. The carrier block 4, the processing block 5, and the interface block 6 are arranged in the horizontal direction.

  The carrier block 4 includes a carrier station 12 and a carry-in / carry-out unit 13. The loading / unloading unit 13 is interposed between the carrier station 12 and the processing block 5. The carrier station 12 supports a plurality of carriers 11. The carrier 11 accommodates, for example, a plurality of circular wafers W in a sealed state. The carrier 11 has an open / close door for loading and unloading the wafer W on the side surface 11a side. The carrier 11 is detachably installed on the carrier station 12 so that the side surface 11a faces the loading / unloading unit 13 side.

  The carry-in / carry-out unit 13 has a plurality of opening / closing doors 13 a corresponding to the plurality of carriers 11 on the carrier station 12. By opening the open / close door and the open / close door 13a on the side surface 11a at the same time, the inside of the carrier 11 and the inside of the carry-in / out unit 13 are communicated. The carry-in / carry-out unit 13 includes a delivery arm A1. The transfer arm A1 takes out the wafer W from the carrier 11 and transfers it to the processing block 5, receives the wafer W from the processing block 5, and returns it to the carrier 11.

  The processing block 5 has a plurality of processing modules 14, 15, 16, and 17. The processing modules 14, 15, 16, and 17 contain a plurality of coating units U1, a plurality of heat treatment units U2, and a transfer arm A3 that transfers the wafer W to these units (see FIG. 3). The processing module 17 further includes a direct transfer arm A6 that transfers the wafer W without passing through the coating unit U1 and the heat treatment unit U2 (see FIG. 2). The coating unit U1 applies a resist solution to the surface of the wafer W. The heat treatment unit U2 performs the heat treatment by heating the wafer W with, for example, a hot plate and cooling the heated wafer W with, for example, a cooling plate.

  The processing module 14 is a BCT module that forms a lower layer film on the surface of the wafer W by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 14 applies a liquid for forming a lower layer film on the wafer W. The heat treatment unit U2 of the processing module 14 performs various heat treatments associated with the formation of the lower layer film.

  The processing module 15 is a COT module that forms a resist film on a lower layer film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 15 applies a resist film forming liquid on the lower layer film. The heat treatment unit U2 of the processing module 15 performs various heat treatments accompanying the formation of the resist film.

  The processing module 16 is a TCT module that forms an upper layer film on a resist film by the coating unit U1 and the heat treatment unit U2. The coating unit U1 of the processing module 16 applies a liquid for forming an upper layer film on the resist film. The heat treatment unit U2 of the processing module 16 performs various heat treatments accompanying the formation of the upper layer film.

  The processing module 17 is a DEV module that develops the resist film after exposure by the coating unit U1 and the heat treatment unit U2. The developing unit applies a developing solution onto the exposed surface of the wafer W, and then rinses the developing solution with a rinsing solution to develop the resist film. The heat treatment unit performs various heat treatments associated with the development processing. The heat treatment is, for example, heat treatment before development processing (PEB: Post Exposure Bake) or heat treatment after development processing (PB: Post Bake).

  In the processing block 5, a shelf unit U10 is provided on the carrier block 4 side, and a shelf unit U11 is provided on the interface block 6 side (see FIGS. 2 and 3). The shelf unit U10 is provided so as to extend from the floor surface to the processing module 16, and is partitioned into a plurality of cells arranged in the vertical direction. An elevating arm A7 is provided in the vicinity of the shelf unit U10. The raising / lowering arm A7 raises / lowers the wafer W between the cells of the shelf unit U10. The shelf unit U11 is provided so as to extend from the floor surface to the upper part of the processing module 17, and is partitioned into a plurality of cells arranged in the vertical direction.

  The interface block 6 incorporates a delivery arm A8 and is connected to the exposure apparatus 3. The delivery arm A8 delivers the wafer W arranged on the shelf unit U11 to the exposure apparatus 3, receives the wafer W from the exposure apparatus 3, and returns it to the shelf unit U11.

  The substrate processing system 1 performs the coating / developing process according to the following procedure. First, the transfer arm A1 transports the wafer W in the carrier 11 to the shelf unit U10. The wafer W is placed in the cell for the processing module 14 by the elevating arm A7, and the transfer arm A3 is transferred to each unit in the processing module 14. The coating unit U1 and the heat treatment unit U2 of the processing module 14 form a lower layer film on the surface of the wafer W transferred by the transfer arm A3. When the formation of the lower layer film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the lifting arm A7 places the wafer W returned to the shelf unit U10 in the cell for the processing module 15, and the transfer arm A3 transfers it to each unit in the processing module 15. The coating unit U1 and the heat treatment unit U2 of the processing module 15 form a resist film on the lower layer film of the wafer W transferred by the transfer arm A3. When the formation of the resist film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the lift arm A7 places the wafer W returned to the shelf unit U10 in the cell for the processing module 16, and the transfer arm A3 transfers it to each unit in the processing module 16. The coating unit U1 and the heat treatment unit U2 of the processing module 16 form an upper layer film on the resist film of the wafer W transferred by the transfer arm A3. When the formation of the upper layer film is completed, the transfer arm A3 returns the wafer W to the shelf unit U10.

  Next, the lift arm A7 places the wafer W returned to the shelf unit U10 in the cell for the processing module 17, and the transfer arm A6 directly transfers it to the shelf unit U11. The transfer arm A8 delivers the wafer W to the exposure apparatus 3. When the exposure process in the exposure apparatus 3 is completed, the transfer arm A8 receives the wafer W from the exposure apparatus 3 and returns it to the shelf unit U11.

  Next, the transfer arm A3 of the processing module 17 transfers the wafer W returned to the shelf unit U11 to each unit in the processing module 17. The coating unit U1 and the heat treatment unit U2 of the processing module 17 perform development processing of the resist film on the wafer W transferred by the transfer arm A3 and heat treatment associated therewith. When the development of the resist film is completed, the transfer arm A3 transfers the wafer W to the shelf unit U10.

  Next, the wafer W transferred to the shelf unit U10 is placed in the transfer cell by the lifting arm A7, and the transfer arm A1 returns to the carrier 11. Thus, the coating / developing process is completed.

[Substrate processing equipment]
Next, the configuration of the heat treatment unit U2 will be described in detail as an example of the substrate processing apparatus. As shown in FIG. 4, the heat treatment unit U <b> 2 includes a hot plate 20, a hot plate holding unit 23, an elevating mechanism 30, and a control unit 50.

  The hot plate 20 has a disk shape and incorporates a heater 21. A plurality of proximity pins 22 are provided on the hot plate 20. The plurality of proximity pins 22 support the wafer W placed on the hot plate 20. Thereby, a gap is secured between the hot plate 20 and the wafer W.

  The hot plate holder 23 includes a bottom plate 24 and a peripheral wall 25. The bottom plate 24 faces the hot plate 20. The peripheral wall 25 is provided along the periphery of the bottom plate 24. The peripheral wall 25 holds the outer peripheral portion of the hot plate 20. The hot plate 20 and the hot plate holder 23 function as a support base 28 that supports the wafer.

  The elevating mechanism 30 includes a plurality of (for example, three) elevating pins 31, a pin support portion 32 that supports the plurality of elevating pins 31, and an elevating drive portion 33 that elevates and lowers the pin support portion 32.

  The raising / lowering drive part 33 incorporates drive sources, such as a motor and an air cylinder. As the elevating drive unit 33 moves the pin support unit 32 up and down, the elevating pin 31 moves up and down. As a result, the elevating pins 31 move up and down through the bottom plate 24 and the hot plate 20. The upper part of the elevating pins 31 protrudes on the hot plate 20 as the elevating pins 31 are raised, and is accommodated in the support base 28 as the elevating pins 31 are lowered. For this reason, the elevating mechanism 30 functions to elevate the wafer W on the support base 28 by elevating the plurality of elevating pins 31.

  The pin support portion 32 is provided with a vibration sensor 40. The vibration sensor 40 is a piezoelectric conversion type sensor such as a piezoceramic microphone, for example, and is arranged to detect vibration propagated from the lift pins 31 to the pin support portion 32. That is, the vibration sensor 40 functions as a bone conduction sensor that detects vibration generated by the elevating pins 31 through a solid.

  The control unit 50 includes a wafer transfer control unit 51, a lift control unit 52, a timing detection unit 53, a data storage unit 55, a difference calculation unit 57, and a placement state detection unit 59.

  The wafer transfer control unit 51 controls the transfer arm A3 so as to carry in the wafer W onto the hot plate 20 and carry out the wafer W from the hot plate 20.

  The raising / lowering control unit 52 controls the raising / lowering mechanism 30 to raise / lower the wafer W on the support table 28.

  Based on the vibration data detected by the vibration sensor 40, the timing detection unit 53 determines the timing of switching between the contact state (contact state) and the non-contact state (separate state) between the lift pins 31 and the wafer W. To detect. As an example, the timing detection unit 53 detects timing (hereinafter referred to as “contact timing”) at which the non-contact state between the lift pins 31 and the wafer W is switched to the contact state. At the contact timing, since the elevating pins 31 collide with the wafer W, the amplitude of vibration transmitted to the vibration sensor 40 rapidly increases. Therefore, for example, it is possible to detect the time when the amplitude exceeds a predetermined threshold (first threshold) as the contact timing. The first threshold value can be set in advance based on, for example, measured vibration data. The timing detection unit 53 stores the detected contact timing in the data storage unit 55.

  The difference calculation unit 57 calculates a difference between the contact timing and the reference timing as an example of information regarding the contact timing stored in the data storage unit 55 and the reference timing. The reference timing is, for example, a contact timing when a flat wafer W without warp is placed on the proximity pins 22 without being lifted. The reference timing is set in advance based on measured data, for example, and stored in the data storage unit 55. The difference calculation unit 57 is an example of information on the difference between the contact timing at one lift pin 31 and the contact timing at another lift pin 31, and the contact timing at one lift pin 31 and the contact at another lift pin 31. Differences from timing are also detected.

  The mounting state detection unit 59 detects the mounting state of the wafer W based on the difference calculated by the difference calculation unit 57. Specifically, the rising of the wafer W or the tilt of the wafer W on the support table 28 is detected as the mounting state of the wafer W. The mounting state detection unit 59 may further detect whether or not the mounting state of the wafer W is normal based on the rising of the wafer W or the inclination of the wafer W.

  As described above, the vibration sensor 40, the timing detection unit 53, the difference calculation unit 57, and the placement state detection unit 59 are based on the switching timing of the contact state and the non-contact state between the lift pins 31 and the wafer W. It functions as a detection mechanism 60 that detects the mounting state.

  Such a control unit 50 includes, for example, one or a plurality of control computers. In this case, each element of the control unit 50 is configured by cooperation of a processor, a memory, a monitor, and the like of the control computer. A program for causing the control computer to function as the control unit 50 may be recorded on a computer-readable recording medium. In this case, the recording medium records a program for causing the apparatus to execute a substrate heat treatment method described later. Examples of the computer-readable recording medium include a hard disk, a compact disk, a flash memory, a flexible disk, and a memory card.

  Note that the hardware configuring each element of the control unit 50 is not necessarily limited to the processor, the memory, and the monitor. For example, each element of the control unit 50 may be configured by an electric circuit specialized for its function, or may be configured by an ASIC (Application Specific Integrated Circuit) in which the electric circuit is integrated.

[Substrate heat treatment method]
Subsequently, as an example of the substrate heat treatment method, a procedure for heating the wafer W by the heat treatment unit U2 will be described.

  As shown in FIG. 5, first, the control unit 50 executes step S01. In step S <b> 01, the lift control unit 52 controls the lift drive unit 33 so as to raise the lift pins 31 and project their ends onto the hot plate 20, so that the wafer W is placed on the lift pins 31. The wafer transfer control unit 51 controls the transfer arm A3.

  Next, the control part 50 performs step S02. In step S <b> 02, the lifting control unit 52 controls the lifting drive unit 33 so that the wafer W is lowered and placed on the support base 28.

  Next, the control part 50 performs step S03. In step S <b> 03, the lifting control unit 52 controls the lifting drive unit 33 so as to start re-raising of the lifting pins 31.

  Next, the control part 50 performs step S04. In step S04, the timing detection unit 53 detects the contact timing.

  Next, the control part 50 performs step S05. In step S <b> 05, the lifting control unit 52 controls the lifting drive unit 33 so that the wafer W is lowered and placed on the support base 28 again. In this way, the elevation controller 52 raises the wafer W again after placing the wafer W on the support table 28, and places the wafer W on the support table 28 again.

  Next, the control part 50 performs step S06. In step S06, the difference calculation unit 57 calculates the difference between the contact timing and the reference timing. The difference calculation unit 57 also detects the difference between the contact timing of one lifting pin 31 and the contact timing of another lifting pin 31.

  Next, the control unit 50 executes Step S07. In step S07, the mounting state detection unit 59 detects the mounting state of the wafer W on the support base 28 based on the difference calculated in step S06.

  For example, as shown in FIG. 6A, in a state where a flat wafer W without warp is placed on the proximity pins 22 without being lifted (hereinafter referred to as “normal placement state”). The contact timing matches the reference timing. Further, the contact timings of the elevating pins 31 also coincide with each other. For this reason, any difference becomes zero in step S06. In this case, the placement state detection unit 59 detects that the wafer W is placed normally without being lifted.

  FIG. 6B illustrates a state in which the wafer W warped so that the back surface is concave is placed on the proximity pins 22. In such a state, in the region surrounded by the proximity pins 22, the wafer W is lifted as compared to the normal placement state. For this reason, the contact timing is delayed with respect to the reference timing, and the difference between the contact timing and the reference timing becomes large. In this case, the mounting state detection unit 59 detects the lifting of the wafer W as the mounting state of the wafer W. The mounting state detection unit 59 may further detect the degree of lifting of the wafer W based on the magnitude of the difference between the contact timing and the reference timing.

  FIG. 7A illustrates a state in which the wafer W is tilted and placed on the foreign matter T. In this case, the lifting pins 31A located on the lower side of the inclination first contact the wafer W, and then the other lifting pins 31B and 31C contact the wafer W (see FIG. 7B). For this reason, the difference of the contact timing in the raising / lowering pins 31B and 31C and the contact timing in the raising / lowering pin 31A becomes large. In this case, the mounting state detection unit 59 detects the tilt of the wafer W as the mounting state of the wafer W. The mounting state detection unit 59 may further detect the degree of inclination of the wafer W based on the magnitude of the difference between the contact timing at the lift pins 31B and 31C and the contact timing at the lift pins 31A.

  Next, the control unit 50 executes Step S08 as shown in FIG. In step S08, the controller 50 waits for a predetermined time. Thereby, the wafer W is heated by the hot plate 20 for a predetermined time.

  Next, the control part 50 performs step S09. In step S09, the wafer transfer control unit 51 controls the transfer arm A3 so as to unload the wafer W.

  As described above, the heat treatment unit U2 includes the support base 28 that supports the wafer W and the plurality of lift pins 31, and the lift mechanism 30 that lifts and lowers the wafer W on the support base 28 using the plurality of lift pins 31. And a detection mechanism 60 that detects the mounting state of the wafer W based on information about the timing of switching between the contact state and the non-contact state between at least one of the plurality of lift pins 31 and the wafer W.

  The timing of switching between the contact state and the non-contact state between at least one of the plurality of lift pins 31 and the wafer W correlates with the distance between the contact portion and the support base 28. For this reason, the mounting state of the wafer W can be detected based on the switching timing. Further, according to the detection mechanism 60, since the raising / lowering pins 31 for raising and lowering the wafer W are utilized for detecting the mounting state of the wafer W, the complexity of the apparatus configuration is suppressed. Therefore, according to the heat treatment unit U2, the mounting state of the wafer W can be detected with a simple configuration.

  The detection mechanism 60 may detect the mounting state based on information regarding the difference between the switching timing of one lifting pin 31 and the switching timing of another lifting pin 31. Information regarding the difference between the switching timing of one lifting pin 31 and the switching timing of another lifting pin 31 correlates with the inclination of the wafer W between the one lifting pin 31 and the other lifting pin 31. To do. For this reason, the inclination of the wafer W can be detected as the mounting state of the wafer W.

  The detection mechanism 60 uses the difference between the switching timing of one lifting pin 31 and the switching timing of the other lifting pins 31 as information relating to a shift in switching timing, and detects the mounting state based on the difference. May be. In this case, the tilt of the wafer W can be detected with higher accuracy.

  The detection mechanism 60 may detect the mounting state based on information regarding the switching timing of at least one of the plurality of lifting pins 31 and a preset reference timing. In this case, the switching timing is evaluated based on the relationship with the reference timing, and the mounting state of the wafer W can be detected more clearly.

  The detection mechanism 60 uses the difference between the switching timing of at least one of the plurality of lifting pins 31 and a preset reference timing as information regarding the switching timing and the reference timing, and loads the detection mechanism 60 based on the difference. The installation state may be detected. By obtaining the difference between the switching timing and the reference timing, it is possible to extract only the component correlated with the mounting state of the wafer W from the switching timing. For this reason, the mounting state of the wafer W can be detected more clearly.

  The detection mechanism 60 may detect the mounting state of the wafer W based on the switching timing from the non-contact state to the contact state. When switching from the non-contact state to the contact state, the elevating pins 31 collide with the wafer W, so that a large change is likely to occur in the elevating pins 31 compared to when switching from the contact state to the non-contact state. For this reason, the timing of the switching can be detected more reliably. However, it is not essential to detect the mounting state of the wafer W based on the switching timing from the non-contact state to the contact state. The detection mechanism 60 may detect the mounting state of the wafer W based on the switching timing from the contact state to the non-contact state.

  After the wafer W is placed on the support table 28, the wafer W is moved up again, and is further provided with a lift control unit 52 that places the wafer W on the support table 28 again. The mounting state of the wafer W may be detected based on the switching timing when the wafer W is raised again. In this case, the detection of the mounting state of the wafer W based on the switching timing from the non-contact state to the contact state can be automated.

  The detection mechanism 60 may include a vibration sensor 40 that can detect vibration generated by the elevating pins 31 and may detect a switching timing based on the vibration. When the contact state and the non-contact state between the lift pins 31 and the wafer W are switched, vibration occurs in the lift pins 31. Therefore, the switching timing can be detected with a simple configuration using a vibration sensor.

  The vibration sensor 40 may be provided so as to detect vibration through a solid. In this case, since the vibration generated in the elevating pin 31 is detected with high sensitivity by solid mediation, the switching timing can be detected more reliably.

  The elevating mechanism 30 has a pin support portion 32 that supports a plurality of elevating pins 31, and the vibration sensor 40 may be provided on the pin support portion 32. In this case, it is possible to detect vibrations at the plurality of lifting pins 31 by one vibration sensor 40. For this reason, the apparatus configuration can be further simplified.

  As shown in FIG. 8, the detection mechanism 60 may include a plurality of vibration sensors 40 corresponding to the plurality of lifting pins 31. In this case, it is possible to specify in which lifting pin the detected switching timing has occurred. For this reason, the mounting state of the wafer W can be detected in more detail. For example, when detecting the tilt of the wafer W, it is possible to detect in which direction the wafer W is tilted.

  In the present embodiment, the case where the difference between the switching timing of one lifting pin 31 and the switching timing of another lifting pin 31 is used as information regarding the switching timing shift is shown, but the present invention is not limited to this. Absent. For example, the detection mechanism 60 uses the total value of the period in which the intensity of vibration detected by the vibration sensor 40 is larger than the first threshold as information regarding the shift in switching timing, and based on the total value of the period. You may detect a mounting state.

  For example, when the vibrations generated with the switching timings of all the lifting pins 31 overlap with each other to form one vibration waveform, the period during which the one vibration waveform is larger than the first threshold is the total. Value. When the vibrations form a plurality of vibration waveforms without overlapping each other, the sum of the periods in which the respective vibration waveforms are larger than the first threshold value is the total value.

  The total value correlates with a shift in switching timing. Specifically, the total value increases as the shift in switching timing increases. For this reason, the inclination of the wafer W can also be detected based on the total value. In addition, when the vibration which arises with the switching timing in one raising / lowering pin 31 and the vibration which arises with the switching timing in the other raising / lowering pin 31 overlap, it is difficult to detect these switching timing separately. There is a possibility. Even in such a case, the total value can be detected. For this reason, the tilt of the wafer W can be detected with higher sensitivity by using the total value as a substitute characteristic for the shift of the switching timing.

  The detection mechanism 60 may detect whether or not the mounting state is normal based on whether or not the total value is smaller than the second threshold value. The second threshold value can be set in advance, for example, by comparing the vibration measurement data with the mounting state of the wafer W.

  Although the embodiment has been described above, the present invention is not necessarily limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the invention.

  For example, the sensor for detecting the switching timing is not limited to the vibration sensor 40. Examples of other sensors for detecting the switching timing include a strain gauge type force sensor and a capacitance type contact sensor.

  Further, for example, the substrate to be processed is not limited to a semiconductor wafer, and may be, for example, a glass substrate, a mask substrate, or an FPD (Flat Panel Display).

  DESCRIPTION OF SYMBOLS 20 ... Hot plate, 22 ... Proximity pin, 28 ... Support stand, 30 ... Lifting mechanism, 31 ... Lifting pin, 32 ... Pin support part, 33 ... Lifting drive part, 40 ... Vibration sensor, 50 ... Control part, 60 ... Detection mechanism, U2 ... heat treatment unit, W ... wafer.

Claims (14)

A support for supporting the substrate;
An elevating mechanism having a plurality of elevating pins, and elevating and lowering the substrate on the support base by the plurality of elevating pins;
A substrate processing apparatus comprising: a detection mechanism that detects a mounting state of the substrate based on information related to a timing of switching between a contact state and a non-contact state between at least one of the plurality of lift pins and the substrate.   2. The substrate according to claim 1, wherein the detection mechanism detects the placement state based on information regarding a shift between the switching timing of one lifting pin and the switching timing of another lifting pin. 3. Processing equipment.   The detection mechanism uses a difference between the switching timing of one lifting pin and the switching timing of another lifting pin as information regarding a shift in the switching timing. The substrate processing apparatus according to claim 2, wherein the state is detected.   4. The detection mechanism according to claim 1, wherein the detection mechanism detects the placement state based on information related to the switching timing of at least one of the plurality of lift pins and a preset reference timing. The substrate processing apparatus according to item.   The detection mechanism uses a difference between the switching timing and the reference timing in at least one of the plurality of lifting pins as information on the switching timing and the reference timing, and based on the difference, The substrate processing apparatus according to claim 4, wherein the mounting state is detected.   The substrate processing apparatus according to claim 1, wherein the detection mechanism detects a mounting state of the substrate based on a timing of the switching from the non-contact state to the contact state. After the substrate is placed on the support table, the substrate is lifted again, and further includes an elevation control unit that places the substrate again on the support table,
The substrate processing apparatus according to claim 6, wherein the detection mechanism detects the mounting state of the substrate based on the switching timing when the lifting mechanism raises the substrate again.   The substrate according to claim 1, wherein the detection mechanism includes a vibration sensor capable of detecting vibration generated by the elevating pin, and detects the switching timing based on the vibration. Processing equipment.   The substrate processing apparatus according to claim 8, wherein the vibration sensor is provided so as to detect the vibration through a solid. The elevating mechanism has a pin support portion that supports the plurality of elevating pins,
The substrate processing apparatus according to claim 9, wherein the vibration sensor is provided on the pin support portion.   The substrate processing apparatus according to claim 10, wherein the detection mechanism includes a plurality of the vibration sensors corresponding to the plurality of lifting pins.   The substrate processing apparatus according to claim 1, wherein the detection mechanism includes a plurality of sensors that respectively detect the switching timings of the plurality of lift pins.   The detection mechanism has a vibration sensor capable of detecting vibration generated by the elevating pin, and switches the total value of periods during which the intensity of vibration detected by the vibration sensor is greater than a first threshold. The substrate processing apparatus according to claim 2, wherein the placement state is detected based on a total value of the period and is used as information relating to the timing deviation.   The substrate processing apparatus according to claim 13, wherein the detection mechanism detects whether the placement state is normal based on whether the total value is smaller than a second threshold value.

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