JP2016136612A - Composite wiring board provided with plural wiring boards connected via connecting member, manufacturing method of connecting member, connecting member, and pressure sensor - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a composite wiring board in which partial restoration can be easily performed.SOLUTION: A composite wiring board includes a plurality of wiring boards that are aligned adjacent to each other, and connecting members, each of which electrically connects two wiring boards adjacent to each other. Each of the connecting members includes a plurality of conductive members that electrically connect a plurality of electrode sections of one wiring board and a plurality of electrode sections of the other wiring board to each other. Each of the conductive members has a conductive adhesive layer containing an adhesive, and a plurality of conductive particles added to the adhesive. Each of the conductive members is disposed such that the conductive adhesive layer is in contact with the electrode sections of the one wiring board and the electrode sections of the other wiring board. The conductive adhesive layer has conductivity in both the thickness direction and the planar direction thereof.SELECTED DRAWING: Figure 6

Description

  The present invention relates to a composite wiring board including a plurality of wiring boards connected via connection members. The present invention also relates to a connection member for electrically connecting a plurality of wiring boards and a method for manufacturing the connection member. Furthermore, this invention relates to a pressure sensor provided with a composite wiring board.

  In various fields such as a display device and a sensor device, a transistor circuit having a transistor including a semiconductor layer is widely used. For example, a transistor circuit is used as a drive circuit for individually driving a plurality of light emitting elements of an organic EL (Organic Electroluminescence) display device or as a sensor circuit for detecting sensor signals at a plurality of positions of a pressure sensor device. Has been. The transistor circuit is generally provided in the form of a transistor substrate including a base material, a plurality of transistor circuits formed on the base material, and wiring connected to the transistor circuit.

  Conventionally, inorganic semiconductor materials such as silicon, gallium arsenide, and indium gallium arsenide have been used as semiconductor materials for transistors. On the other hand, in recent years, research on transistors using organic semiconductor materials has been actively conducted. Organic semiconductor materials can generally be formed on a substrate at a lower temperature than inorganic semiconductor materials. For this reason, a flexible plastic substrate etc. can be utilized as a board | substrate with which the circuit using an organic-semiconductor material and the wiring connected to a circuit were formed. This makes it possible to provide a lightweight semiconductor element that is stable against mechanical shock. In addition, since an organic semiconductor material can be formed on a substrate using a coating process such as a printing method, a larger number of organic transistors can be efficiently formed on the substrate than when an inorganic semiconductor material is used. Is possible. For this reason, there is a possibility that the manufacturing cost of the semiconductor element can be lowered. For these reasons, organic semiconductor materials are expected to be applied to drive circuits such as organic EL and electronic paper, or electronic tags. In the following description, a substrate on which wiring is formed is also referred to as a wiring substrate. A transistor substrate on which a transistor circuit and wiring are formed, a flexible substrate on which wiring is formed, and the like are examples of wiring substrates.

  By the way, in order to manufacture a transistor substrate having no defects or very few defects, an environment in which pressure and cleanliness are precisely adjusted is required. Therefore, it is not easy to increase the size of the transistor substrate by increasing the area of the base material. Considering such problems, for example, Patent Document 1 proposes that a large-area transistor array including a large number of transistor circuits is formed by arranging a plurality of transistor substrates so that they are adjacent to each other. Has been. In this case, two adjacent transistor substrates are electrically connected by connecting a connecting member formed using a flexible substrate to an electrode portion formed on the transistor substrate. This connection of a plurality of transistor substrates to each other is also referred to as tiling.

  By manufacturing a large-area transistor array by combining a plurality of transistor substrates as described above, the area of each transistor substrate can be made relatively small. For this reason, it can suppress that a defect arises in the manufacturing process of each transistor substrate.

JP 2010-79196 A JP 2003-150075 A

  In a composite wiring board composed of a plurality of wiring boards electrically connected via connecting members such as the above-described transistor array, the composite wiring board is configured at the time of a test before shipment or use after shipment. A defect or defect may occur or be found only in a part of the plurality of wiring boards, for example, only one wiring board. In this case, since the other wiring boards are in a normal state, it is preferable to repair the composite wiring board such as the transistor array by exchanging only one wiring board.

  On the other hand, in the conventional tiling, as described in Patent Document 1, a connection member including an anisotropic conductive material provided on a flexible substrate is used. In this case, first, the connection member is placed on the electrode portion of the wiring board, and then the connection member and the wiring board are electrically connected by thermocompression bonding to the wiring board. Thus, since the connection member and the wiring board are conventionally connected by thermocompression bonding, it is difficult to remove the connection member from the wiring board after the connection member is once attached to the wiring board. For this reason, even if a defect or defect occurs only in some of the wiring boards, it is not easy to repair the transistor array by replacing only some of the wiring boards.

  Further, in order to appropriately perform the thermocompression bonding step, it is required to press the connecting member in parallel to the wiring board over a certain area. That is, the area of the connecting member needs to be equal to or greater than the minimum value determined from the viewpoint of appropriate pressing. On the other hand, in the thermocompression bonding step, it is necessary to at least partially melt the conductive particles contained in the anisotropic conductive material by heating the connection member. On the other hand, it is not easy to apply heat to the connecting member uniformly over a wide area. Therefore, the area of the connecting member needs to be not more than the maximum value determined from the viewpoint of appropriate heating. Thus, when a connection member contains an anisotropic conductive material, the area of a connection member will be restrict | limited from a viewpoint of press or a heating. Such restrictions can also be a factor that prevents partial repair of the transistor array.

  The present invention has been made in consideration of such points, and an object of the present invention is to provide a composite wiring board in which partial repair can be easily performed and a pressure sensor including the same. It is another object of the present invention to provide a connection member for electrically connecting a plurality of wiring boards and a method for manufacturing the connection member.

  An embodiment of the present invention includes a plurality of wiring boards arranged so as to be adjacent to each other, and a connection member that electrically connects the two adjacent wiring boards, the wiring board including a base material A plurality of electrode portions arranged along the outer edge of the base material, and a wiring connected to the electrode portion, and the connection member includes a plurality of the electrode portions of one of the wiring boards, A plurality of conductive members that electrically connect the plurality of electrode portions of the other wiring substrate adjacent to the one wiring substrate, and the conductive member includes an adhesive and the adhesive A conductive adhesive layer including a plurality of conductive particles added, and the conductive member includes the electrode portion of the one wiring substrate and the electrode of the other wiring substrate. Arranged so as to contact the part, the conductive adhesive layer, In any of the viewing direction and the surface direction has conductivity even a composite wiring board.

  The conductive member further includes a conductive layer including a first surface and a second surface located on the opposite side of the first surface, and the conductive adhesive layer is provided on the first surface side of the conductive layer. It may be done.

  The connecting member may further include a support member that is provided on the second surface side of the conductive layer of the conductive member and has an insulating property.

  The support member may extend over a plurality of the conductive members.

  The conductive particles of the conductive pressure-sensitive adhesive layer may contain at least one of metal or carbon.

  The metal contained in the conductive particles may contain at least one of nickel, gold, silver, copper, or aluminum.

  The conductive particles include a powder and a metal layer covering the powder, and the metal layer may include the metal.

  The width of the conductive member may be larger than the width of the electrode portion in the direction in which the electrode portions are arranged on the outer edge of the base material.

  The wiring substrate may be a transistor substrate having a plurality of transistor circuits formed on the base material, and the plurality of electrode portions of the transistor substrate may be electrically connected to the transistor circuits.

  The transistor circuit includes a transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, and a pressure sensitive body electrically connected to the source electrode or the drain electrode of the transistor, and the pressure sensitive body May be configured such that the electrical resistance or capacitance of the pressure sensitive body changes according to the pressure applied to the pressure sensitive body.

Another embodiment of the present invention is a pressure sensor that includes the above-described composite wiring board and detects pressure according to a change in electric resistance or capacitance of the pressure-sensitive body included in the transistor circuit. is there.
In the pressure sensor, the semiconductor layer included in the transistor circuit may be made of an organic semiconductor material.

  Another embodiment of the present invention is a method for manufacturing a connection member that electrically connects a plurality of wiring boards arranged adjacent to each other, and a laminate including a separator and a conductive material layer is prepared. A step of cutting the conductive material layer on the separator to form a plurality of conductive members including the conductive material layer on the separator, and the conductive member formed in the cutting step. Forming a connecting member, and the conductive material layer is provided on the separator and includes a pressure-sensitive adhesive and a plurality of conductive particles added to the pressure-sensitive adhesive. And the conductive adhesive layer is conductive in both the thickness direction and the surface direction.

  The conductive material layer further includes a conductive layer including a first surface and a second surface located on the opposite side of the first surface, and the conductive adhesive layer includes the first surface of the conductive layer and the first surface. The conductive member including the conductive layer and the conductive adhesive layer may be formed by cutting in the cutting step.

  The manufacturing method further includes a step of attaching a supporting member to the plurality of conductive members formed on the separator, and a step of peeling the separator from the plurality of conductive members. The conductive member and the support member may be formed.

  The wiring board electrically connected by the connecting member may be a transistor board having a plurality of transistor circuits formed on a base material.

  One embodiment of the present invention is a connection member that electrically connects a plurality of wiring boards arranged adjacent to each other, and the connection member includes a plurality of electrode portions of one of the wiring boards. A plurality of conductive members that respectively electrically connect the plurality of electrode portions of the other wiring board adjacent to the one wiring board, and the conductive member includes an adhesive and the adhesive A conductive adhesive layer including a plurality of conductive particles added, and the conductive member includes the electrode portion of the one wiring substrate and the electrode of the other wiring substrate. The conductive adhesive layer is electrically conductive in both the thickness direction and the surface direction, and the connecting member has the conductive adhesive layer as the electrode. Placed on the side opposite the side that touches the part, Further comprising a support member having an edge property, the plurality of the conductive member, wherein are physically separated from each other on the support member, the connection member, a.

  The conductive member further includes a conductive layer including a first surface and a second surface located on the opposite side of the first surface, and the conductive adhesive layer is provided on the first surface side of the conductive layer. The support member may be provided on the second surface side of the conductive layer.

  The wiring board electrically connected by the connecting member may be a transistor board having a plurality of transistor circuits formed on a base material.

  ADVANTAGE OF THE INVENTION According to this invention, the composite wiring board which can implement partial repair easily can be provided.

FIG. 1 is a plan view showing a transistor array according to an embodiment of the present invention. 2 is an enlarged plan view showing one transistor substrate of the transistor array shown in FIG. FIG. 3 is a longitudinal sectional view showing an example of a transistor circuit formed on a transistor substrate. FIG. 4 is a longitudinal sectional view for explaining an application example of a transistor circuit. FIG. 5 is a longitudinal sectional view showing a case where the transistor substrate and the connection member of FIG. 2 are cut in the VV direction. 6 is a longitudinal sectional view showing a case where the transistor substrate and the connecting member in FIG. 2 are cut in the VI-VI direction. 7A to 7E are views showing an example of a method for manufacturing a connection member. FIG. 8 is a longitudinal sectional view showing a modification of the connection member. FIG. 9 is a longitudinal sectional view showing a modification of the connection member. FIG. 10A is a longitudinal sectional view showing a modification of the transistor circuit. FIG. 10B is a longitudinal sectional view showing a modification of the connection member. FIGS. 11A and 11B are diagrams illustrating a manufacturing process of the connection member in the second embodiment. 12A to 12C are diagrams illustrating a manufacturing process of a connection member in Example 3. FIG. FIG. 13 is a diagram for explaining a connection member manufacturing process according to the fourth embodiment.

  Hereinafter, an embodiment of the present invention will be described with reference to FIGS. 1 to 7A to 7E. In the drawings attached to the present specification, for the sake of illustration and ease of understanding, the scale, the vertical / horizontal dimension ratio, and the like are appropriately changed and exaggerated from those of the actual ones. Further, in this specification, the terms “substrate”, “base material”, and “film” are not distinguished from each other only based on the difference in names. For example, “substrate” and “base material” are concepts including members that can be called sheets and films. Furthermore, as used in this specification, the shape and geometric conditions and the degree thereof are specified. For example, terms such as “rectangular”, values of length and angle, and the like are not limited to strict meanings. The range of functions that can be expected is interpreted.

(Transistor array)
First, the transistor array 10 will be described with reference to FIG. As shown in FIG. 1, the transistor array 10 includes a plurality of transistor substrates 20 arranged adjacent to each other, and a connection member 40 that electrically connects the two adjacent transistor substrates 20. Here, an example is shown in which the transistor array 10 is configured by combining four transistor substrates 20 having a rectangular shape. Note that the shape of the transistor substrate 20 and the number of transistor substrates 20 to be combined are not particularly limited as long as the adjacent transistor substrates 20 can be electrically connected appropriately.

(Transistor substrate)
Next, the transistor substrate 20 will be described in detail with reference to FIG. FIG. 2 is an enlarged plan view showing one transistor substrate 20 of the transistor array 10 shown in FIG. In FIG. 2, a connecting member 40 for connecting adjacent transistor substrates 20 is indicated by a dotted line for convenience.

  As shown in FIG. 2, the transistor substrate 20 is arranged along a base material 21, a plurality of transistor circuits 30 formed on the base material 21, and an outer edge 22 of the base material 21, and is electrically connected to the transistor circuit 30. And a plurality of electrode portions 24 connected to each other, and a wiring formed on the base material 21 and connected to the transistor circuit 30 or the electrode portion 24. The plurality of transistor circuits 30 are arranged in a matrix as shown in FIG. Note that in FIG. 1 and FIG. 2, wirings connected to the transistor circuit 30 or the electrode unit 24 are omitted in order to prevent the drawings from becoming complicated.

  FIG. 2 shows an example in which the transistor circuit 30 and the electrode part 24 are both formed on the first surface 21 a side of the base material 21. However, the transistor circuit 30 and the electrode unit 24 may be formed on different surfaces. For example, although not illustrated, the electrode part 24 may be formed on the first surface 21a side of the base material 21, and the transistor circuit 30 may be formed on the second surface side opposite to the first surface 21a. .

  The electrode unit 24 is used to transmit a signal for controlling or driving the transistor circuit 30 or a signal detected by the transistor circuit 30 to a circuit outside the transistor array 10 or an adjacent transistor substrate 20. It is. Note that it is not necessary for all the electrode portions 24 to be electrically connected to the transistor circuit 30, and at least a part of the electrode portions 24 may be connected to the transistor circuit 30. In the example illustrated in FIG. 2, the electrode portions 24 are arranged along each of the four sides included in the rectangular outer edge 22. Further, in two of the four sides, the electrode part 24 is electrically connected to the electrode part 24 of the adjacent transistor substrate 20 via the connection member 40. Further, although not shown, a substrate or a cable connected to a circuit outside the transistor array 10 may be connected to the electrode portions 24 arranged along the remaining two sides of the four sides. .

  The dimensions of the electrode portions 24 and the arrangement pitch P of the electrode portions 24 are appropriately set according to the specifications of the transistor substrate 20 and the like. For example, the length S1 of the electrode part 24 is in the range of 0.5 mm to 5 mm, and the width S2 of the electrode part 24 is in the range of 0.05 mm to 50 mm. The arrangement pitch P of the electrode parts 24 is in the range of 0.1 mm to 100 mm. Note that the length S1 of the electrode part 24 is a dimension of the electrode part 24 in a direction orthogonal to the direction in which the sides of the base material 21 on which the electrode parts 24 are arranged are extended, as shown in FIG. The width S2 of the electrode part 24 and the arrangement pitch P of the electrode part 24 are the dimension of the electrode part 24 and the arrangement pitch of the electrode part 24 in the direction in which the sides of the base material 21 on which the electrode parts 24 are arranged are extended. .

  As long as the electrode part 24 has electroconductivity, the material which comprises the electrode part 24 is not specifically limited. For example, silver, aluminum, copper, or the like can be used as a material constituting the electrode unit 24.

  As long as the transistor circuit 30 and the electrode part 24 can be appropriately supported, the material constituting the base material 21 is not particularly limited. For example, the base material 21 may be a flexible substrate having flexibility or a rigid substrate having no flexibility.

(Transistor circuit)
Next, an example of the transistor circuit 30 formed on the transistor substrate 20 will be described with reference to FIG. In the present embodiment, an example in which the transistor circuit 30 is configured as a pressure sensor circuit for detecting the distribution of pressure applied from the outside will be described. Therefore, the transistor array 10 in the present embodiment functions as one member constituting the pressure sensor.

  As shown in FIG. 3, the transistor circuit 30 includes a gate electrode 31 provided on the first surface 21 a of the substrate 21 and a gate provided on the first surface 21 a of the substrate 21 so as to cover the gate electrode 31. A source electrode 33 and a drain electrode 34 provided on the gate insulating film 32 so as to face the insulating film 32 with a certain space therebetween, and a source electrode 33 and a drain electrode 34 so as to be in contact with the source electrode 33 and the drain electrode 34. And a semiconductor layer 35 provided between and an insulating layer 36 provided so as to cover the source electrode 33, the drain electrode 34, and the semiconductor layer 35. A first electrode 37 is provided on the insulating layer 36, and the first electrode 37 is electrically connected to the source electrode 33 or the drain electrode 34 through a through hole 36 a formed in a part of the insulating layer 36. It is connected to the. In the example shown in FIG. 3, a through hole 36a is formed on the drain electrode 34, and the drain electrode 34 and the first electrode 37 are electrically connected through the through hole 36a. The first electrode 37 may be filled in the entire area of the through hole 36a, or may be provided only on the wall surface of the through hole 36a.

  As materials constituting the gate electrode 31, the gate insulating film 32, the source electrode 33, the drain electrode 34, the insulating layer 36, and the first electrode 37, known materials used in transistors are used. For example, the material disclosed in Patent Document 1 described above can be used.

  As a material constituting the semiconductor layer 35, either an inorganic semiconductor material or an organic semiconductor material may be used, but an organic semiconductor material is preferably used. As the organic semiconductor material, a low molecular organic semiconductor material such as pentacene or a high molecular organic semiconductor material such as polypyrrole can be used. More specifically, a low molecular organic semiconductor material or a high molecular organic semiconductor material disclosed in JP2013-21190A can be used. Here, the “low molecular organic semiconductor material” means, for example, an organic semiconductor material having a molecular weight of less than 10,000. The “polymeric organic semiconductor material” means, for example, an organic semiconductor material having a molecular weight of 10,000 or more.

  Further, as shown in FIG. 3, a pressure sensitive body 38 is provided on the first electrode 37, and a second electrode 39 is provided on the pressure sensitive body 38. The pressure-sensitive body 38 is configured such that the electric resistance value of the pressure-sensitive body 38 in the direction in which the pressure is applied, here in the thickness direction, changes according to the pressure applied to the pressure-sensitive body 38. That is, in the present embodiment, the pressure sensitive body 38 is configured as a so-called pressure sensitive conductor. The pressure-sensitive conductor includes, for example, rubber such as silicone rubber and a plurality of conductive particles such as carbon added to the rubber.

  FIG. 3 shows an example in which the transistor type included in the transistor circuit 30 is a so-called bottom gate / bottom contact type. However, as long as it has an equivalent function, the type of transistor included in the transistor circuit 30 is not limited to the bottom gate / bottom contact type. For example, a transistor circuit 30 including a top gate / bottom contact type, bottom gate / top contact type, or top gate / top contact type transistor may be used.

  FIG. 4 is a longitudinal sectional view showing a portion of the transistor substrate 20 including a plurality of transistor circuits 30. As shown in FIG. 4, the pressure sensitive body 38 and the second electrode 39 described above may be provided continuously across the plurality of transistor circuits 30. That is, the pressure sensitive body 38 and the second electrode 39 may be used in common in each transistor circuit 30. An overcoat layer 26 having an insulating property may be provided on the second electrode 39.

  In the example shown in FIG. 4, when pressure is applied to the transistor substrate 20 via a pen 60 or the like in a part of the transistor substrate 20, the pressure sensitive body 38 is compressed in the thickness direction in the applied portion. As a result, the particles in the pressure sensitive body 38 come into contact with each other in the thickness direction, and the electric resistance value of the pressure sensitive body 38 in the thickness direction becomes low. For this reason, in the transistor circuit 30 including the pressure-sensitive body 38 to which pressure is applied, the current flowing through the source electrode 33 and the drain electrode 34 increases. Therefore, the distribution of the pressure applied to the transistor substrate 20 can be calculated by detecting the value of the current flowing through each transistor circuit 30.

  By the way, when the transistor circuit 30 is configured as a pressure sensor circuit, various pressures are applied to each transistor substrate 20 of the transistor array 10 during a test before shipment or during use after shipment. In particular, when the pressure sensor circuit is for measuring the pressure applied from the foot during walking as disclosed in JP2013-113780A, the pressure applied to the transistor substrate 20 is extremely large. It becomes. Therefore, it is preferable that the connection member 40 that connects the plurality of transistor substrates 20 is configured to be able to individually replace the transistor substrate 20 in which a defect or defect has occurred. Hereinafter, the connection member 40 in the present embodiment will be described in detail with reference to FIGS. 5 and 6.

(Connecting member)
FIG. 5 is a longitudinal sectional view showing a case where the transistor substrate 20 and the connecting member 40 of FIG. 2 are cut in the VV direction, that is, in a direction crossing the outer edge 22 of the base material 21. FIG. 6 is a longitudinal sectional view showing a case where the transistor substrate 20 and the connection member 40 of FIG. 2 are cut in the VI-VI direction, that is, in the direction along the outer edge 22 of the base material 21. In FIG. 5, one of the two adjacent transistor substrates 20 is represented by reference numeral 20A. The other transistor substrate 20 adjacent to one transistor substrate 20A is represented by reference numeral 20B.

  As shown in FIGS. 5 and 6, the connection member 40 includes a plurality of electrode portions 24 that electrically connect the plurality of electrode portions 24 of the one transistor substrate 20A and the plurality of electrode portions 24 of the other transistor substrate 20B, respectively. The conductive member 41 and a support member 45 extending across the plurality of conductive members 41 so as to support the conductive member 41 are included. One conductive member 41 is connected to one electrode portion 24 of one transistor substrate 20A and one electrode portion 24 of the other transistor substrate 20B so as to be peelable and reattachable.

  The conductive member 41 in the present embodiment includes a plurality of layers having conductivity. For example, as shown in FIG. 5, the conductive member 41 includes a conductive layer 43 including a first surface 43 a and a second surface 43 b located on the opposite side of the first surface 43 a, and a conductive layer 43 on the first surface 43 a side. And a conductive adhesive layer 44 provided. As shown in FIG. 5, by disposing the connecting member 40 so that the conductive adhesive layer 44 is in contact with the electrode portion 24 of one transistor substrate 20A and the electrode portion 24 of the other transistor substrate 20B, one transistor substrate 20A is disposed. Electrical connection between the first electrode portion 24 and the second electrode portion 24 of the transistor substrate 20B is ensured.

  As long as the electrode portion 24 of one transistor substrate 20A and the electrode portion 24 of the other transistor substrate 20B can be electrically connected, the size of the conductive member 41 is not particularly limited. For example, in FIG. 5, the length S <b> 3 of the conductive member 41 is set so that the conductive member 41 does not cover the end 24 a of the electrode portion 24, but the present invention is not limited to this, and the conductive member 41 is not limited thereto. The length S3 of the conductive member 41 may be set so as to cover the end 24a of the electrode part 24. 6 shows an example in which the width S4 of the conductive member 41 is smaller than the width S2 of the electrode portion 24. However, the present invention is not limited to this, and the conductive member 41, specifically, the conductive adhesive layer, is not limited thereto. The width S4 of 44 may be larger than the width S2 of the electrode portion 24.

  When the width S4 of the conductive member 41 is larger than the width S2 of the electrode part 24 as described above, the electrode part 24 of one transistor substrate 20A and the electrode part 24 of the other transistor substrate 20B are Even if it is shifted in the width direction, the electrode member 24 to be connected can be entirely covered in the width direction by the conductive member 41, so that a good electrical connection can be ensured. In addition, it is possible to manufacture the transistor array 10 that is well electrically connected without strictly positioning the transistor circuits 20A and 20B during tiling, and the assembly efficiency can be improved. In addition, when the transistor substrates 20A and 20B are organic thin film transistor substrates using organic semiconductor materials, that is, OTFT substrates, due to their flexibility, the electrode portions 24 to be connected may be easily displaced. . In such a case, the connection member 40 in which the width S4 of the conductive member 41 is larger than the width S2 of the electrode part 24 can be used particularly beneficially.

  Hereinafter, the configurations of the conductive layer 43, the conductive adhesive layer 44, and the support member 45 will be described.

[Conductive layer]
The conductive layer 43 is a layer configured to have higher conductivity than the conductive adhesive layer 44. For example, as a material for forming the conductive layer 43, a metal material such as silver, copper, or aluminum can be used. Alternatively, the conductive layer 43 may be configured using an oxide conductor such as indium tin oxide or indium zinc oxide. Alternatively, the conductive layer 43 may be configured by combining a plurality of conductive layers. The thickness of the conductive layer 43 is, for example, in the range of 5 μm to 200 μm.

[Conductive adhesive layer]
The conductive adhesive layer 44 is a layer configured to have adhesiveness and conductivity. For example, the conductive adhesive layer 44 includes an adhesive and a plurality of conductive particles added to the adhesive. The conductive adhesive layer 44 may be formed by applying a paste-like material containing an adhesive and conductive particles to the conductive layer 43, or a tape-like member or film containing the adhesive and conductive particles. It may be formed as a shaped member. As an adhesive and electroconductive particle, the material used in a general electroconductive tape can be employ | adopted suitably. For example, a silicone resin or an acrylic resin can be employed as the adhesive. The conductive particles may contain at least one of metal and carbon. The metal contained in the conductive particles may contain at least one of nickel, gold, silver, copper, or aluminum. As carbon contained in electroconductive particle, what has electroconductivity can be used among the substances comprised, such as graphite and carbon black, for example. The conductive particles may contain a plating powder. The plating powder is particles obtained by forming a metal layer on the surface of the base powder by electroless plating or the like. As a metal contained in the metal layer of the plating powder, nickel, gold, silver, copper, aluminum, or the like can be used.

  The conductive adhesive layer 44 is formed not only after the connection member 40 is connected to the electrode part 24 of the transistor substrate 20 but also before the connection member 40 is connected to the electrode part 24 in the thickness direction of the conductive adhesive layer 44. It is comprised so that it may have electroconductivity. For example, the plurality of conductive particles of the conductive adhesive layer 44 are in contact with each other in the thickness direction so that the conductivity in the thickness direction of the conductive adhesive layer 44 is ensured. This means that when the connection member 40 is attached to the electrode portion 24 of the transistor substrate 20, a thermocompression bonding step as performed in conventional tiling is not necessary. For this reason, according to this Embodiment, the dimension and arrangement pitch of the electroconductive member 41 of the connection member 40 are not restrict | limited based on a thermocompression bonding process. Therefore, it is possible to arbitrarily determine the dimensions and arrangement pitch of the conductive members 41 of the connection member 40 according to the dimensions and arrangement pitch of the electrode portions 24 of the transistor substrate 20. For example, the width S4 of the conductive member 41 can be set to a value substantially equal to the width S2 of the electrode portion 24, that is, within a range of 0.05 mm to 50 mm.

  Moreover, according to this Embodiment, since the thermocompression bonding process is unnecessary, the attachment operation | work of the connection member 40 and a removal operation | work become easy compared with the past. Therefore, when a defect or defect occurs in a part of the transistor substrates 20, the transistor array 10 can be easily repaired by replacing only part of the transistor substrates 20. The adhesive strength of the conductive adhesive layer 44 in the connection member 40 can be set as appropriate depending on the weight of the transistor substrate 20 to be connected, the usage environment, and the like. For example, when measured in a test based on JIS Z 0237, 8 to 11 N / The value may be about 25 mm. The present inventor can connect the transistor substrate 20 in a state where the connection member 40 is stable when the adhesive force is in the above range, can remove the connection member 40 relatively easily, and can remove the electrode portion 24 at the time of removal. It has been found that is not impaired.

  In the present embodiment, as shown in FIG. 6, the conductive adhesive layers 44 of the plurality of conductive members 41 are physically separated from each other. For this reason, even if the conductive adhesive layer 44 has conductivity not only in the thickness direction but also in the plane direction, the two adjacent electrode portions 24 of the transistor substrate 20 do not conduct. Therefore, the conductive adhesive layer 44 may be configured to have conductivity in both the thickness direction and the surface direction. That is, the plurality of conductive particles of the conductive adhesive layer 44 may be in contact with each other also in the plane direction in addition to the thickness direction. The “plane direction” is a direction along the first surface 43 a of the conductive layer 43. When the conductivity of the conductive adhesive layer 44 in the thickness direction is σ1 and the conductivity of the conductive adhesive layer 44 in the surface direction is σ2, σ2 is within a range of 0.5 × σ1 to 1.0 × σ1, for example. It has become.

  Although not shown, the conductive member 41 is provided on the second surface 43b side of the conductive layer 43 in addition to the conductive layer 43 and the conductive adhesive layer 44 provided on the first surface 43a side of the conductive layer 43. The conductive adhesive layer 44 provided may be further included. Thereby, the adhesive force between the conductive member 41 and the support member 45 can be increased, and thereby the reliability of the connection member 40 can be increased.

(Support member)
The support member 45 is a member provided on the second surface 43 b side of the conductive layer 43 so as to support the plurality of conductive members 41 while having insulating properties. Preferably, the support member 45 is configured to have flexibility. For example, as a material constituting the support member 45, a resin such as polyimide, polyethylene naphthalate, or polyethylene terephthalate can be used. The thickness of the support member 45 is preferably set in the range of 5 μm to 200 μm. By providing the support member 45 with flexibility, it is possible to give flexibility to the entire connection member 40, thereby making it easier to attach and remove the connection member 40. . Although not shown, an adhesive layer having insulating properties may be provided on one side or both sides of the support member 45.

(Manufacturing method of connecting member)
Next, an example of the manufacturing method of the connection member 40 described above will be described with reference to FIGS.

  First, as shown in FIG. 7A, a laminate including a separator 50 and a conductive laminate 42 as a conductive material layer provided on the separator 50 is prepared. The conductive laminate 42 includes a conductive layer 43 including a first surface 43a and a second surface 43b located on the opposite side of the first surface 43a, and a conductive adhesive layer provided on the first surface 43a side of the conductive layer 43. 44. The separator 50 is a member that supports the conductive laminate 42 during the manufacturing process of the connection member 40 and is peeled from the connection member 40 including the conductive laminate 42 after the manufacturing process of the connection member 40 is completed. is there. The separator 50 is configured so that the conductive adhesive layer 44 can be easily peeled off. For example, the adhesive force of the conductive adhesive layer 44 to the separator 50 is smaller than the adhesive force of the conductive adhesive layer 44 to the conductive layer 43. As the conductive laminate 42, for example, a conductive tape having a thickness of several tens of μm including a conductive layer 43 made of copper or aluminum and a conductive adhesive layer 44 is used. As the separator 50, what contains resin, glass, etc. is used, for example. In addition, as long as the separator 50 can support the electroconductive laminated body 42 appropriately, the shape and thickness of the separator 50 are not specifically limited. For example, the separator 50 may be a film having flexibility that can be bent or curved. Alternatively, it may be a plate having a certain degree of rigidity.

  Next, a cutting process for cutting the conductive laminate 42 on the separator 50 is performed. Specifically, first, as shown in FIG. 7B, cuts 42 a are formed at each position of the conductive laminate 42 from the second surface 43 b of the conductive layer 43 to the surface of the separator 50. At this time, the cuts 42a are formed so that a plurality of portions represented by reference numeral 42b in FIG. 7B in the conductive laminate 42 are at least partially connected to each other in the depth direction of the paper surface. Thereafter, by separating the portions 42b connected to each other from the separator 50, as shown in FIG. 7C, each of the conductive layers 42 includes the above-described conductive laminate 42 and is physically separated from each other. The member 41 can be formed on the separator 50.

  Thereafter, as shown in FIG. 7D, the support member 45 is attached to each conductive member 41 from the second surface 43 b side of the conductive layer 43. At this time, an adhesive layer or the like for attaching the conductive member 41 to the support member 45 may be provided on the surface of the support member 45 on the conductive member 41 side. Thereafter, the separator 50 is peeled off from each conductive member 41. As a result, as shown in FIG. 7 (e), a connection member 40 including a support member 45 and a plurality of conductive members 41 provided on the support member 45 can be obtained.

  According to the present embodiment described above, the conductive member 41 of the connection member 40 has the conductive adhesive layer 44. The conductive adhesive layer 44 is formed not only after the connection member 40 is connected to the electrode part 24 of the transistor substrate 20 but also before the connection member 40 is connected to the electrode part 24 in the thickness direction of the conductive adhesive layer 44. It is comprised so that it may have electroconductivity. For this reason, the connection member 40 can be attached to the electrode part 24 of the transistor substrate 20 without performing a thermocompression bonding process. Therefore, it is possible to suppress changes in the hardness and adhesive strength of the conductive member 41 before and after the connection member 40 is attached to the electrode portion 24 of the transistor substrate 20. As a result, the connection member 40 once attached to the electrode portion 24 of the transistor substrate 20 can be easily removed as necessary. Accordingly, the transistor array 10 can be repaired by exchanging only a part of the transistor substrates 20 in which defects or defects have occurred. For this reason, the man-hour and cost which are required for repair of the transistor array 10 can be reduced.

  In the present embodiment, the conductive member 41 has the conductive adhesive layer 44 and the conductive layer 43. As a result, the conductive adhesive layer 44 includes an adhesive, so that the conductivity can be reduced with respect to a material made entirely of a conductive material, but the conductive layer 43 provided in contact with the conductive adhesive layer 44. By securing the conductive region, the conductivity of the entire conductive member 41 can be improved. Thereby, the favorable electrical connection between the mutually different electrode parts 24 connected by the connection member 40 can be ensured, and the applicable range can be expanded.

  In the present embodiment, the transistor array 10 tiled by the connection member 40 functions as a member constituting the pressure sensor. In the pressure sensor, the pressure applied to the transistor substrate 20 when receiving pressure from the outside may be extremely large, and there is a high possibility that problems and defects are likely to occur. In the present embodiment, in such a pressure sensor, by connecting the plurality of transistor substrates 20 with the connection member 40 so as to be easily removable, it is particularly beneficial to reduce the man-hours and costs required for repairing the transistor array 10. be able to. In the transistor array 10 provided in the pressure sensor, the semiconductor layer 35 of the transistor circuit 30 is preferably an organic thin film transistor circuit made of an organic semiconductor material. In this case, the durability can be improved by stabilizing the mechanical strength of the semiconductor layer 35.

  Various modifications can be made to the above-described embodiments. Hereinafter, modified examples will be described with reference to the drawings as necessary. In the following description and the drawings used in the following description, the same reference numerals as those used for the corresponding parts in each of the above embodiments are used for the parts that can be configured in the same manner as in each of the above embodiments. And redundant description is omitted. In addition, when it is clear that the operational effects obtained in each of the above-described embodiments can be obtained in the modification, the description thereof may be omitted.

  In the above-described embodiment, the example in which the transistor type included in the transistor circuit 30 is the bottom gate / bottom contact type is shown, but the present invention is not limited to this. FIG. 10A shows a transistor circuit 30 including a top-gate / bottom-contact transistor as an example of a modification of the transistor circuit 30 in this embodiment. The transistor circuit 30 according to this modification includes a source electrode 33 and a drain electrode 34 provided on the base material 21 so as to face each other with a certain interval, and a source electrode 33 so as to be in contact with the source electrode 33 and the drain electrode 34. , A semiconductor layer 35 provided between the drain electrode 34, an insulating layer 36 provided so as to cover the source electrode 33, the drain electrode 34 and the semiconductor layer 35, and a gate electrode 31 provided on the insulating layer 36. And a transistor including A first electrode 37 is provided on the insulating layer 36, and the first electrode 37 is electrically connected to the source electrode 33 through a through hole 36 a formed in a part of the insulating layer 36. In general, a bottom-gate transistor can be easily manufactured by using printing or the like, so that production efficiency can be improved. On the other hand, a top-gate transistor generally can ensure high semiconductor characteristics, so that power consumption can be reduced and the quality of an embedded device can be improved.

  In the above-described embodiment, the example in which the support member 45 of the connection member 40 is configured to spread over the plurality of conductive members 41 has been described, but the present invention is not limited thereto. For example, as illustrated in FIG. 8, the connection member 40 may include a plurality of conductive members 41 and a plurality of support members 45 provided on the respective conductive members 41. That is, the plurality of support members 45 may be physically separated from each other according to the corresponding conductive member 41. Although not shown, the connection member 40 may include a plurality of support members 45 configured to spread over a small number of conductive members 41 such as two or three. Thus, by setting the extending range of the support member 45 to be smaller, the transistor array 10 can be repaired for each smaller section.

  Moreover, in the above-mentioned embodiment, the example which isolate | separates the electroconductive laminated body 42 into a some island-like part by implementing the cutting process which cut | disconnects the electroconductive laminated body 42 on the separator 50 was shown. However, as long as the conductive laminate 42 can be separated into a plurality of island-shaped portions, the method used is not limited to cutting. For example, the conductive laminate 42 may be separated into a plurality of portions by using an etching method.

  Moreover, in the above-mentioned embodiment and modification, the connection member 40 showed the example which has the supporting member 45 provided in the 2nd surface 43b side of the conductive layer 43 of the electroconductive member 41. As shown in FIG. However, the present invention is not limited to this. As shown in FIG. 9, the connection member 40 only needs to include at least a conductive member 41 coupled to the electrode portion 24 of the transistor substrate 20. That is, the support member 45 may not be provided on the connection member 40. Such a connection member 40 is obtained by attaching a plurality of conductive members 41 formed on the separator 50 to the electrode part 24 of the transistor substrate 20 one by one as shown in FIG. Also good. Alternatively, it may be obtained by attaching the connecting member 40 having the conductive member 41 and the support member 45 to the electrode portion 24 of the transistor substrate 20 and then peeling the support member 45 from the conductive member 41.

  Moreover, in the above-mentioned embodiment and modification, although the conductive member 41 in the connection member 40 has shown the example which has the conductive layer 43 and the conductive adhesion layer 44, it is not restricted to this, FIG. 10B shows As shown, the conductive member 41 may have only the conductive adhesive layer 44. A connecting member 40 shown in FIG. 10B includes a conductive member 41 having only a conductive adhesive layer 44 and a support member 45. When the conductive member 41 has only the conductive adhesive layer 44, the transistor array 10 can be thinned by suppressing the thickness of the connection member 40. Moreover, although the connection member 40 shown to FIG. 10B has the supporting member 45, the supporting member 45 does not need to be provided. In this case, in order to improve the handling, it is preferable that the surface of the conductive adhesive layer 44 opposite to the surface in contact with the electrode portion 24 is treated so as not to have adhesiveness. For example, another film-like member may be provided on the surface of the conductive adhesive layer 44 opposite to the surface in contact with the electrode portion 24.

  In the above-described embodiment, the pressure-sensitive body 38 is a so-called pressure-sensitive conductor in which the electric resistance of the pressure-sensitive body 38 changes according to the pressure applied to the pressure-sensitive body 38. An example is shown. However, as long as information corresponding to the pressure applied to the pressure sensitive body can be extracted, the specific configuration of the pressure sensitive body 38 is not particularly limited. For example, the pressure sensitive body 38 may be configured such that the capacitance of the pressure sensitive body 38 changes in accordance with the pressure applied to the pressure sensitive body 38.

  Further, in the above-described embodiment, an example in which the transistor circuit 30 is configured as a pressure sensor circuit for detecting the distribution of pressure applied from the outside has been described. However, the physical quantity detected by the transistor circuit 30 is not limited to pressure, and may be a physical quantity such as light intensity, electromagnetic field intensity, and temperature. The specific application of the transistor circuit 30 is not limited to the sensor circuit. For example, the transistor circuit 30 may be configured as a drive circuit for individually driving a plurality of elements of the display device. According to the present embodiment, it is possible to provide the transistor array 10 that can be easily partially repaired regardless of the application of the transistor circuit 30.

  In the above-described embodiment, the composite wiring board composed of a plurality of wiring boards electrically connected via the connection member 40 is electrically connected via the connection member 40, and the transistor circuit 30 is connected. The example which is the transistor array 10 comprised by the several transistor substrate 20 which has is shown. That is, an example in which the plurality of wiring boards electrically connected via the connection member 40 is the transistor substrate 20 has been shown. However, the wiring boards that are electrically connected via the connection member 40 are not limited to the transistor substrates 20. For example, the connection member 40 described above may be used when a plurality of flexible boards on which wiring and electrode portions are formed are electrically connected to each other. Examples of the flexible substrate mentioned here include a flexible printed circuit board, so-called FPC, and the like. Further, when the adjacent transistor substrate 20 and the flexible substrate are electrically connected to each other, the connection member 40 described above may be used. Therefore, the composite wiring board constituted by a plurality of wiring boards electrically connected via the connection member 40 is configured by electrically connecting the plurality of transistor substrates 20 to each other using the connection member 40. In addition to the transistor array 10 described above, the connection member 40 is used to electrically connect a plurality of flexible substrates to each other, or the connection member 40 is used to connect the transistor substrate 20 and the flexible substrate to each other. What is comprised by electrically connecting is also included.

  In addition, although some modified examples with respect to the above-described embodiment have been described, naturally, a plurality of modified examples can be applied in combination as appropriate.

(Example)
Next, Examples 1 to 4 of the present invention will be described. In the following Examples 1 to 4, an example in which the transistor array 10 is manufactured by tiling a plurality of organic thin film transistor substrates manufactured as the transistor substrate 20, that is, OTFT substrates, with the connection member 40 manufactured separately will be described. .

[Example 1]
In Example 1, in the production of the transistor substrate 20 which is an organic thin film transistor substrate, first, a negative photosensitive resin was spin-coated on a base material 21 made of a PEN (polyethylene naphthalate) film having a thickness of 0.1 mm. This was applied, and then baked at 150 ° C. for 30 minutes to form a negative photosensitive resin planarizing layer. Next, an Al sputtered film having a thickness of 200 nm was formed by sputtering aluminum on the entire surface of the flat layer of the negative photosensitive resin on the base material 21. Then, a positive photoresist was applied on the Al sputtered film by spin coating to form a resist layer.

  Next, the resist layer was patterned by performing exposure and development using a photomask on the resist layer. Then, in the etching process, after etching the Al sputtered film exposed from the portion of the patterned resist layer where the resist is not formed, the resist layer was removed. Thereby, the gate electrode 31 and the data wiring connected thereto were formed on the base material 21.

  Next, an ultraviolet photosensitive acrylic resin was applied onto the gate electrode 31 by spin coating, thereby forming a gate insulating layer covering the gate electrode 31. The gate insulating layer was patterned by performing exposure using a photomask and alkali development on the gate insulating layer. Then, the gate insulating film 32 having a thickness of 1 μm was formed by heat curing at 150 ° C. in an oven for 30 minutes.

  Next, a silver sputtering film having a thickness of 40 nm was formed by sputtering silver on the gate insulating film 32. Then, a positive photoresist was applied on the sputtered silver film by spin coating to form a resist layer. Then, the resist layer was patterned by performing exposure and development using a photomask on the resist layer. Next, after etching the sputtered silver film exposed from the portion of the patterned resist layer where the resist was not formed, the resist layer was removed. Thus, the source electrode 33, the drain electrode 34, and the data wiring connected thereto were formed on the gate insulating film 32.

  Next, a xylene solution of an organic semiconductor in which a thiophone-based polymer is dissolved in xylene at a solid content concentration of 1 wt% is prepared, and this xylene solution is applied to the surface of the substrate on which the source electrode 33, the drain electrode 34, and the data wiring are formed. The organic semiconductor layer with a film thickness of 50 nm was formed in the whole base-material surface by apply | coating to this. Then, a positive resist was applied on the organic semiconductor layer by spin coating to form a resist layer. Then, the resist layer was patterned by performing exposure using a photomask and alkali development on the resist layer.

Then, by irradiating with vacuum ultraviolet rays having a wavelength of 172 nm and an illuminance of 3 mW / cm ^{2 in} the atmosphere for 60 seconds, the organic semiconductor layer other than the portion covered with the resist layer on the organic semiconductor layer is etched and removed. Thus, the organic semiconductor layer was patterned, and then the resist layer was removed. Thereby, a semiconductor layer 35 made of an organic semiconductor material was formed.

  Next, a passivation layer was formed by applying an ultraviolet photosensitive acrylic resin on the semiconductor layer 35 by spin coating. Then, the passivation layer was patterned so that a through-hole 36a exposing the drain electrode 34 was formed by performing exposure using a photomask and alkali development on the passivation layer. Next, a cured passivation layer was formed by heat curing at 150 ° C. for 30 minutes in an oven. Thereafter, an electrode or the like electrically connected to the drain electrode 34 was formed. In addition, an electrode portion 24 arranged along the outer edge 22 of the substrate 21 was provided. A part of the electrode part 24 is connected to the gate electrode 31, the source electrode 33, or the drain electrode 34 through a data wiring formed on the substrate 21 by processes such as patterning and etching. Thus, a transistor substrate 20 having a plurality of transistor circuits 30 according to Example 1 was produced.

  On the other hand, when producing the connection member 40 in Example 1, first, a conductive adhesive tape was prepared as a laminate including the separator 50 and the conductive laminate 42 provided on the separator 50. The conductive adhesive tape has a thickness of about 80 μm, and the conductive laminate 42 including the conductive layer 43 and the conductive adhesive layer 44 has a thickness of about 50 μm. The conductive layer 43 is made of aluminum.

  Next, the conductive adhesive tape is cut with a cutting machine so that a plurality of rectangular cuts of 2 mm × 5 mm are formed at intervals of 2 mm in the conductive layer 43 and the conductive adhesive layer 44 in the conductive adhesive tape. Cutting was performed from the 43 side toward the separator 50 side. Then, the conductive layer 43 and the conductive adhesive layer 44 that are integrally connected to the outside of the above-mentioned notches are peeled from the separator 50, whereby the separator 50 is arranged in an island-like pattern at intervals of 2 mm. A plurality of 5 mm rectangular conductive members 41 were formed. Thereafter, the polyimide tape as the support member 45 is adhered to the conductive portion 43 of the conductive member 41 by adhesion, and then the plurality of conductive members 41 are peeled off from the separator 50 to thereby support the plurality of conductive members 41 as support members. 45. Thereby, the connection member 40 was produced.

  Then, the two transistor substrates 20 manufactured as described above were prepared, and the two transistor substrates 20 were arranged side by side so that the electrode portions 24 to be connected to each transistor substrate 20 face each other. And the transistor array 10 by which the two transistor substrates 20 were tiled was produced by attaching the above-mentioned connection member 40 to each electrode part 24 so that each electrode part 24 might be straddled.

  In the transistor array 10 according to Example 1 manufactured as described above, the electrical resistance value between the one substrate 20 and the other substrate 20 is measured to be 10Ω or less via the connection member 40, and the substrate It was confirmed that 20 was well connected electrically. Further, when the connecting member 40 was peeled off and again attached to the electrode portion 24 of each transistor substrate 20 and tiled, the two transistor substrates 20 were well connected. Moreover, the electrical resistance value at this time was the same value as the state before peeling. Thus, it was confirmed that the transistor substrate 20 can be partially repaired in the transistor array 10 in which the plurality of transistor substrates 20 are tiled.

[Example 2]
Next, Example 2 will be described. In Example 2, the transistor substrate 20 was produced in the same procedure as in Example 1. On the other hand, the manufacturing procedure of the connection member 40 is different from that of the first embodiment. Below, the preparation procedure of the connection member 40 which concerns on Example 2 is explained in full detail.

  In Example 2, when producing the connection member 40, first, a conductive adhesive tape was prepared as a laminate including the separator 50 and the conductive laminate 42 provided on the separator 50. The conductive adhesive tape has a thickness of about 50 μm, and the conductive laminate 42 including the conductive layer 43 and the conductive adhesive layer 44 has a thickness of about 30 μm. The conductive layer 43 is made of copper.

Next, as shown in FIG. 11 (a), the conductive layer 43 and the conductive adhesive layer 44 in the above-mentioned conductive pressure-sensitive adhesive tape are conductive so that a plurality of 2 mm × 5 mm rectangular cuts are formed at intervals of 2 mm. The adhesive tape was cut from the conductive layer 43 side toward the separator 50 side by irradiation with a CO ₂ laser having a wavelength of 10.6 μm from the CO ₂ laser oscillation device 111.

  Then, as shown in FIG. 11B, the conductive layer 43 and the conductive adhesive layer 44 that are integrally connected outside the above-mentioned notch are separated from the separator 50 in the direction of the arrow α, thereby separating the separator. A plurality of 2 mm × 5 mm rectangular conductive members 41 that are patterned in an island shape and arranged at intervals of 2 mm are formed on 50. Next, the polyimide tape as the support member 45 is adhered to the conductive portion 43 of the conductive member 41 by adhesion, and then the plurality of conductive members 41 are peeled off from the separator 50 to thereby support the plurality of conductive members 41 as the support members. 45. Thereby, the connection member 40 according to Example 2 was produced.

  The transistor array 10 including the two transistor substrates 20 that are tiled by the connection member 40 according to the second embodiment may be well electrically connected as in the first embodiment. confirmed. Further, even when the connecting member 40 is peeled off and again attached to the electrode portion 24 of each transistor substrate 20 and tiled, the two transistor substrates 20 are well connected and the electric resistance value at this time Was the same value as in the state before peeling.

Example 3
Next, Example 3 will be described. Also in Example 3, the transistor substrate 20 was produced in the same procedure as in Example 1. On the other hand, the manufacturing procedure of the connection member 40 is different from those in the first and second embodiments. A procedure for producing the connection member 40 according to Example 3 will be described in detail below.

  In Example 3, when manufacturing the connection member 40, first, as shown in FIG. 12A, as a laminate including the separator 50 and the conductive laminate 42 provided on the separator 50, a conductive material is used. Adhesive tape was prepared. The conductive adhesive tape has a thickness of about 50 μm, and the conductive laminate 42 including the conductive layer 43 and the conductive adhesive layer 44 has a thickness of about 30 μm. The conductive layer 43 is made of copper.

  Next, as shown in FIG. 12 (b), the conductive layer 43 and the conductive adhesive layer 44 in the above-mentioned conductive adhesive tape are electrically conductive so that a plurality of rectangular cuts of 2 mm × 5 mm are formed at intervals of 2 mm. The adhesive tape was cut from the conductive layer 43 side toward the separator 50 side by continuous punching of the metal mold 121. The mold 121 is formed with a frame-shaped punching portion for forming a rectangular cut of 2 mm × 5 mm.

  Next, as shown in FIG. 12C, the conductive layer 43 and the conductive adhesive layer 44 that are integrally connected to the outside of the notch are peeled from the separator 50 in the direction of the arrow α, thereby separating the separator. A plurality of 2 mm × 5 mm rectangular conductive members 41 that are patterned in an island shape and arranged at intervals of 2 mm are formed on 50. Next, the polyimide tape as the support member 45 is adhered to the conductive portion 43 of the conductive member 41 by adhesion, and then the plurality of conductive members 41 are peeled off from the separator 50 to thereby support the plurality of conductive members 41 as the support members. 45. Thereby, the connection member 40 according to Example 3 was produced.

  The transistor array 10 including the two transistor substrates 20 tiled by the connection member 40 according to the third embodiment may be well electrically connected as in the first embodiment. confirmed. Further, even when the connecting member 40 is peeled off and again attached to the electrode portion 24 of each transistor substrate 20 and tiled, the two transistor substrates 20 are well connected and the electric resistance value at this time Was the same value as in the state before peeling.

Example 4
Next, Example 4 will be described. Also in Example 4, the transistor substrate 20 was produced in the same procedure as in Example 1. On the other hand, the manufacturing procedure of the connection member 40 is different from those of the first to third embodiments. The procedure for producing the connection member 40 according to Example 4 will be described in detail below.

  In Example 4, when producing the connection member 40, first, a conductive adhesive tape was prepared as a laminate including the separator 50 and the conductive laminate 42 provided on the separator 50. The conductive adhesive tape has a thickness of about 50 μm, and the conductive laminate 42 including the conductive layer 43 and the conductive adhesive layer 44 has a thickness of about 30 μm. The conductive layer 43 is made of copper.

  Next, the conductive adhesive tape was wound around the supply roller 131 shown in FIG. 13 with the conductive layer 43 positioned outside. Thereafter, the conductive adhesive tape is unwound from the supply roller 131 and hung around the transport roller 132 disposed away from the supply roller 132, so that the conductive adhesive tape is placed between the supply roller 131 and the transport roller 132. It arranged in the state which straddles. As a result, the conductive adhesive tape was placed in a state where it was fed from the supply roller 131 and conveyed to the conveying roller 132 side.

  A first die roll 133 formed by projecting a frame-shaped punching portion 133a for forming a rectangular cut of 2 mm × 5 mm on the conductive adhesive tape is formed on the outer surface. When the punching portion 133a rotates, It arrange | positioned so that it might be in the state pushed into a conductive adhesive tape. In addition, a second die roll 134 having a frame-shaped punching portion 134a formed on the outer surface for forming a rectangular cut of 2 mm × 5 mm on the conductive adhesive tape is formed by rotating the punching portion 134a. It arrange | positioned so that it might be in the state pushed into a conductive adhesive tape. The 1st metal mold | die roll 133 is a member for forming a notch in the conductive layer 43, and is arrange | positioned in the upstream in the conveyance direction of an electroconductive adhesive tape. The second mold roll 134 is a member for forming a cut in the conductive adhesive layer 44, and is disposed downstream of the first mold roll 133 in the transport direction of the conductive adhesive tape.

  Then, as shown in FIG. 13, when the conductive adhesive tape is conveyed from the supply roller 131 to the conveyance roller 132 side, the first mold roll 133 and the second mold roll 134 are in contact with the conductive adhesive tape. The electroconductive pressure-sensitive adhesive tape was rotated in the direction of sending it out downstream in the transport direction. Then, a rectangular cut of 2 mm × 5 mm is continuously formed in the conductive layer 43 by cutting the punched portion 133a of the first mold roll 133, and then the punched portion 134a of the second mold roll 134 is cut. By cutting by punching, rectangular cuts of 2 mm × 5 mm were continuously formed in the conductive adhesive layer 44 through the cuts formed in the conductive layer 43. Thus, a plurality of rectangular cuts of 2 mm × 5 mm were formed at intervals of 2 mm in the conductive layer 43 and the conductive adhesive layer 44 in the conductive adhesive tape.

  Thereafter, as shown in FIG. 13, the conductive layer 43 and the conductive adhesive layer 44 that are integrally connected to the outside of the notch are peeled from the separator 50 in the direction of the arrow α, so that the separator 50 is placed on the separator 50. A plurality of 2 mm × 5 mm rectangular conductive members 41 that were patterned in an island shape at intervals of 2 mm were formed. Next, the separator 50 having a plurality of conductive members 41 formed thereon was removed from the supply roller 131 and the transport roller 132, and the polyimide tape as the support member 45 was adhered to the conductive portion 43 of the conductive member 41 by adhesion. Thereafter, the plurality of conductive members 41 were transferred to the support member 45 by peeling the plurality of conductive members 41 from the separator 50. Thereby, the connection member 40 according to Example 4 was produced.

  The transistor array 10 including the two transistor substrates 20 tiled by the connection member 40 according to the fourth embodiment as described above may be well electrically connected as in the first embodiment. confirmed. Further, even when the connecting member 40 is peeled off and again attached to the electrode portion 24 of each transistor substrate 20 and tiled, the two transistor substrates 20 are well connected and the electric resistance value at this time Was the same value as in the state before peeling.

DESCRIPTION OF SYMBOLS 10 Transistor array 20 Transistor board 21 Base material 22 Outer edge 24 Electrode part 30 Transistor circuit 31 Gate electrode 32 Gate insulating film 33 Source electrode 34 Drain electrode 35 Semiconductor layer 36 Insulating layer 36a Through-hole 37 1st electrode 38 Pressure sensitive body 39 2nd Electrode 40 Connection member 41 Conductive member 42 Conductive laminate 43 Conductive layer 44 Conductive adhesive layer 45 Support member 50 Separator

Claims (19)

A plurality of wiring boards arranged adjacent to each other;
A connection member for electrically connecting two adjacent wiring boards,
The wiring board includes a base material, a plurality of electrode portions arranged along an outer edge of the base material, and a wiring connected to the electrode portion,
The connection member includes a plurality of conductive members that electrically connect a plurality of the electrode portions of one of the wiring boards and a plurality of the electrode portions of the other wiring board adjacent to the one wiring board, respectively. Including members,
The conductive member has a conductive pressure-sensitive adhesive layer including a pressure-sensitive adhesive and a plurality of conductive particles added to the pressure-sensitive adhesive.
The conductive member is arranged such that the conductive adhesive layer is in contact with the electrode part of one of the wiring boards and the electrode part of the other of the wiring boards,
The composite wiring board, wherein the conductive adhesive layer has conductivity in both the thickness direction and the surface direction. The conductive member further includes a conductive layer including a first surface and a second surface located on the opposite side of the first surface;
The composite wiring board according to claim 1, wherein the conductive adhesive layer is provided on the first surface side of the conductive layer.   The composite wiring board according to claim 2, wherein the connection member further includes a support member provided on the second surface side of the conductive layer of the conductive member and having an insulating property.   The composite wiring board according to claim 3, wherein the support member extends over a plurality of the conductive members.   5. The composite wiring board according to claim 1, wherein the conductive particles of the conductive adhesive layer include at least one of a metal and carbon.   The composite wiring board according to claim 5, wherein the metal contained in the conductive particles includes at least one of nickel, gold, silver, copper, and aluminum. The conductive particles include a powder and a metal layer covering the powder,
The composite wiring board according to claim 5, wherein the metal layer includes the metal.   The composite wiring board according to claim 1, wherein a width of the conductive member is larger than a width of the electrode portion in a direction in which the electrode portions are arranged on an outer edge of the base material. . The wiring substrate is a transistor substrate having a plurality of transistor circuits formed on the base material,
The composite wiring substrate according to claim 1, wherein the plurality of electrode portions of the transistor substrate are electrically connected to the transistor circuit. The transistor circuit includes a transistor including a gate electrode, a source electrode, a drain electrode, and a semiconductor layer, and a pressure sensitive body electrically connected to the source electrode or the drain electrode of the transistor,
The composite wiring board according to claim 9, wherein the pressure sensitive body is configured such that an electric resistance or a capacitance of the pressure sensitive body changes according to a pressure applied to the pressure sensitive body.   A pressure sensor comprising the composite wiring board according to claim 10, wherein the pressure sensor detects pressure according to a change in electric resistance or capacitance of the pressure-sensitive body included in the transistor circuit.   The pressure sensor according to claim 11, wherein the semiconductor layer included in the transistor circuit is made of an organic semiconductor material. A method for manufacturing a connection member for electrically connecting a plurality of wiring boards arranged adjacent to each other,
Preparing a laminate including a separator and a conductive material layer;
A cutting step of cutting the conductive material layer on the separator to form a plurality of conductive members including the conductive material layer on the separator;
Forming a connection member from the conductive member formed in the cutting step,
The conductive material layer is provided on the separator, and has a conductive pressure-sensitive adhesive layer including a pressure-sensitive adhesive and a plurality of conductive particles added to the pressure-sensitive adhesive.
The method for manufacturing a connection member, wherein the conductive adhesive layer has conductivity in both the thickness direction and the surface direction. The conductive material layer further includes a conductive layer including a first surface and a second surface located on the opposite side of the first surface;
The conductive adhesive layer is provided between the first surface of the conductive layer and the separator,
The method for manufacturing a connection member according to claim 13, wherein in the cutting step, the conductive member including the conductive layer and the conductive adhesive layer is formed by cutting. Attaching a support member to the plurality of conductive members formed on the separator;
Further separating the separator from the plurality of conductive members,
The method for manufacturing a connection member according to claim 13 or 14, wherein the connection member is formed of the conductive member and the support member.   The manufacturing of the connection member according to any one of claims 13 to 15, wherein the wiring substrate electrically connected by the connection member is a transistor substrate having a plurality of transistor circuits formed on a base material. Method. A connection member for electrically connecting a plurality of wiring boards arranged adjacent to each other,
The connection member includes a plurality of conductive members that electrically connect a plurality of electrode portions of one of the wiring substrates and a plurality of electrode portions of the other wiring substrate adjacent to the one wiring substrate, respectively. Including
The conductive member has a conductive pressure-sensitive adhesive layer including a pressure-sensitive adhesive and a plurality of conductive particles added to the pressure-sensitive adhesive.
The conductive member is used in a state where the conductive adhesive layer is disposed so as to be in contact with the electrode part of one of the wiring boards and the electrode part of the other of the wiring boards,
The conductive adhesive layer has conductivity in both the thickness direction and the surface direction,
The connection member further includes a support member disposed on the side opposite to the side where the conductive adhesive layer is in contact with the electrode part, and having an insulating property,
The connection member, wherein the plurality of conductive members are physically separated from each other on the support member. The conductive member further includes a conductive layer including a first surface and a second surface located on the opposite side of the first surface;
The conductive adhesive layer is provided on the first surface side of the conductive layer,
The connection member according to claim 17, wherein the support member is provided on the second surface side of the conductive layer.   The connection member according to claim 17 or 18, wherein the wiring substrate electrically connected by the connection member is a transistor substrate having a plurality of transistor circuits formed on a base material.

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