JP2016127095A - Light-emitting device - Google Patents
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- 229920002050 silicone resin Polymers 0.000 claims abstract description 26
- 238000007789 sealing Methods 0.000 claims description 83
- 238000006243 chemical reaction Methods 0.000 claims description 24
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 6
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 5
- 238000000605 extraction Methods 0.000 abstract description 25
- 229920005989 resin Polymers 0.000 abstract description 9
- 239000011347 resin Substances 0.000 abstract description 9
- 238000002845 discoloration Methods 0.000 abstract description 7
- 238000005538 encapsulation Methods 0.000 abstract 7
- 230000007774 longterm Effects 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- 230000005540 biological transmission Effects 0.000 description 8
- 238000011156 evaluation Methods 0.000 description 8
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- 238000012790 confirmation Methods 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
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- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004070 electrodeposition Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- LAQFLZHBVPULPL-UHFFFAOYSA-N methyl(phenyl)silicon Chemical compound C[Si]C1=CC=CC=C1 LAQFLZHBVPULPL-UHFFFAOYSA-N 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 150000004703 alkoxides Chemical class 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
本発明は、発光装置に関する。 The present invention relates to a light emitting device.
近年、照明用光源として半導体発光素子を搭載した発光装置が利用されており、次世代照明の光源として注目を集めている。この照明用光源に用いられる発光装置は、所望の発光色を得るために、例えば、半導体発光素子と、その半導体発光素子を覆う波長変換部と、波長変換部を覆う透光性部材とを含んで構成される。ここで、波長変換層は、例えば、蛍光体を含む透光性を有する樹脂からなり、透光性部材は、例えば、レンズ形状に成形された透光性を有する樹脂からなる。 In recent years, light-emitting devices equipped with semiconductor light-emitting elements have been used as illumination light sources, and have attracted attention as light sources for next-generation illumination. In order to obtain a desired emission color, the light-emitting device used for the illumination light source includes, for example, a semiconductor light-emitting element, a wavelength conversion unit that covers the semiconductor light-emitting element, and a translucent member that covers the wavelength conversion unit. Consists of. Here, the wavelength conversion layer is made of, for example, a translucent resin containing a phosphor, and the translucent member is made of, for example, a translucent resin molded into a lens shape.
この照明用光源に用いられる発光装置には、さらなる光取り出し効率の向上及び信頼性の向上が求められている。
例えば、特許文献１には、半導体発光素子と、半導体発光素子を覆う内部光透過層と、内部光透過層を覆う外部光透過層とを、備える発光装置が開示されている。内部光透過層の屈折率を、外部光透過層の屈折率より高くして光取り出し効率を向上させることが開示されている。半導体発光素子を構成する半導体層の屈折率が高いことを考慮して、内部光透過層の屈折率を、半導体層の屈折率と外部光透過層の屈折率の中間的な値に設定したものである。内部光透過層の材料には、金属アルコキシドにゾル・ゲル法を施して形成されたポリメタロキサンゲル、超微粒子状金属酸化物にゾル・ゲル法を施して形成されたポリメタロキサンゲル、低融点ガラスを使用している。
The light emitting device used for the illumination light source is required to further improve the light extraction efficiency and the reliability.
For example, Patent Document 1 discloses a light-emitting device that includes a semiconductor light-emitting element, an internal light transmission layer that covers the semiconductor light-emitting element, and an external light transmission layer that covers the internal light transmission layer. It is disclosed that the light extraction efficiency is improved by making the refractive index of the internal light transmission layer higher than the refractive index of the external light transmission layer. In consideration of the high refractive index of the semiconductor layer constituting the semiconductor light emitting device, the refractive index of the internal light transmission layer is set to an intermediate value between the refractive index of the semiconductor layer and the refractive index of the external light transmission layer. It is. The material of the internal light transmission layer includes polymetalloxane gel formed by applying sol-gel method to metal alkoxide, polymetalloxane gel formed by applying sol-gel method to ultrafine metal oxide, Melting point glass is used.
また、特許文献２では、ＬＥＤ素子と、蛍光物質を含み、ＬＥＤ素子を覆う光波長変換部と、光波長変換部を覆う透光性部材と、を備えるＬＥＤ光源が開示されている。光波長変換部は、略円柱形状若しくは略円錐台形状を有し、略円柱形状若しくは略円錐台形状の側面は凹状曲面部分を形成している。凹状曲面部分を持つ光波長変換部の屈折率は、レンズ形状に成形された透光性部材の屈折率よりも小さいことが開示されている。すなわち、光波長変換部の形状が略円柱形状若しくは略円錐台形状であってかつその側面が特定の凹状曲面であるときには、光波長変換部の屈折率が透光性部材の屈折率より小さい場合に光取り出し効率が高くなることが示されている。一方、光波長変換部の屈折率が透光性部材の屈折率より大きい場合であっても、光波長変換部の形状を最適化することにより、光取り出し効果が向上すると記載されている。透光性部材の材質は、エポキシ樹脂を使用している。 Patent Document 2 discloses an LED light source including an LED element, a light wavelength conversion unit that includes a fluorescent material and covers the LED element, and a translucent member that covers the light wavelength conversion unit. The light wavelength conversion unit has a substantially cylindrical shape or a substantially truncated cone shape, and a side surface of the substantially cylindrical shape or the substantially truncated cone shape forms a concave curved surface portion. It is disclosed that the refractive index of the light wavelength conversion part having a concave curved surface portion is smaller than the refractive index of the translucent member formed into a lens shape. That is, when the shape of the light wavelength conversion portion is a substantially cylindrical shape or a substantially truncated cone shape and the side surface is a specific concave curved surface, the refractive index of the light wavelength conversion portion is smaller than the refractive index of the translucent member It is shown that the light extraction efficiency is increased. On the other hand, it is described that the light extraction effect is improved by optimizing the shape of the light wavelength conversion part even when the refractive index of the light wavelength conversion part is larger than the refractive index of the translucent member. An epoxy resin is used as the material of the translucent member.
しかしながら、初期性能において光取り出し効率を高くしても、長期間の使用により透光性部材が変色して出力が低下することがある。 However, even if the light extraction efficiency is increased in the initial performance, the translucent member may be discolored due to long-term use and the output may be lowered.
そこで、光取り出し効率が高く、樹脂の変色による出力低下が抑制された発光装置を提供することを目的とする。 Therefore, an object is to provide a light-emitting device that has high light extraction efficiency and suppresses a decrease in output due to resin discoloration.
本実施形態にかかる発光装置は、発光素子と、前記発光素子を覆う第一封止部材と、前記第一封止部材を覆う第二封止部材と、を備え、前記第一封止部材及び前記第二封止部材はそれぞれシリコーン樹脂を主成分として含み、前記第一封止部材の第一屈折率は、前記第二封止部材の第二屈折率より小さい。 The light emitting device according to the present embodiment includes a light emitting element, a first sealing member that covers the light emitting element, and a second sealing member that covers the first sealing member, and the first sealing member and Each of the second sealing members contains a silicone resin as a main component, and the first refractive index of the first sealing member is smaller than the second refractive index of the second sealing member.
本発明の実施形態に係る発光装置は、光取り出し効率が高く、樹脂の変色による出力低下および色ずれが抑制された発光装置を提供することができる。 The light-emitting device according to the embodiment of the present invention can provide a light-emitting device that has high light extraction efficiency and suppresses output reduction and color shift due to resin discoloration.
以下、図面を参照しながら実施形態に係る発光装置について説明する。図１は、実施形態にかかる発光装置の模式平面図である。図２は、実施形態にかかる発光装置の模式断面図である。図２は、図１のＩＩ−ＩＩ線の断面図である。
本実施形態の発光装置は、導電性部材５が配置された支持体６と、支持体６上に載置された発光素子１と、発光素子１を覆う波長変換部材２と、波長変換部材２と支持体６の一部とを覆う第一封止部材３と、第一封止部材３を覆う第二封止部材４とを備える。波長変換部材２は層状に設けてもよい。第二封止部材４は、例えば、凸レンズ形状を成している。発光素子１と導電性部材５とは、接合部材７を用いて電気的に接合している。支持体６の上面には導電性部材５が配置されており、支持体６の下面には正極の電極端子９、負極の電極端子１０が配置されており、導電性部材５と、正極の電極端子９、負極の電極端子１０とは、貫通孔等を介して電気的に接続している。発光素子１の外周の波長変換部材２上には、発光素子１からの光や外部からの光を効率的に反射する反射部材８が設けられている。
Hereinafter, a light emitting device according to an embodiment will be described with reference to the drawings. FIG. 1 is a schematic plan view of a light emitting device according to an embodiment. FIG. 2 is a schematic cross-sectional view of the light emitting device according to the embodiment. 2 is a cross-sectional view taken along line II-II in FIG.
The light-emitting device of this embodiment includes a support 6 on which a conductive member 5 is disposed, a light-emitting element 1 placed on the support 6, a wavelength conversion member 2 that covers the light-emitting element 1, and a wavelength conversion member 2. And a first sealing member 3 that covers a part of the support 6 and a second sealing member 4 that covers the first sealing member 3. The wavelength conversion member 2 may be provided in layers. The second sealing member 4 has, for example, a convex lens shape. The light emitting element 1 and the conductive member 5 are electrically joined using a joining member 7. A conductive member 5 is disposed on the upper surface of the support 6, and a positive electrode terminal 9 and a negative electrode terminal 10 are disposed on the lower surface of the support 6. The conductive member 5 and the positive electrode The terminal 9 and the negative electrode terminal 10 are electrically connected through a through hole or the like. On the wavelength conversion member 2 on the outer periphery of the light emitting element 1, a reflecting member 8 that efficiently reflects light from the light emitting element 1 and light from the outside is provided.
ここで、発光素子１は、例えば、成長基板上に、半導体層を含む半導体積層構造を有し、成長基板側を主光取出し面としており、支持体６上にフリップチップ実装にて搭載されている。支持体６の表面には正負の導電性部材が設けられ、発光素子１と導電性部材とは例えば導電性の接合部材を介して電気的に接続される。また、波長変換部材２は、発光素子１より放出される光の波長を変換して異なる波長の光を出射する。 Here, the light emitting element 1 has, for example, a semiconductor laminated structure including a semiconductor layer on a growth substrate, the growth substrate side is a main light extraction surface, and is mounted on the support 6 by flip chip mounting. Yes. Positive and negative conductive members are provided on the surface of the support 6, and the light emitting element 1 and the conductive member are electrically connected through, for example, a conductive bonding member. The wavelength conversion member 2 converts the wavelength of light emitted from the light emitting element 1 and emits light having different wavelengths.
また、第一封止部材３及び第二封止部材４はそれぞれシリコーン樹脂を主成分として含んでいる。シリコーン樹脂は、エポキシ樹脂よりも耐熱性および耐光性が高い。第一封止部材３及び第二封止部材４がそれぞれシリコーン樹脂を主成分として含むことにより、長期間にわたって安定して発光する発光装置を提供できる。 The first sealing member 3 and the second sealing member 4 each contain a silicone resin as a main component. Silicone resins have higher heat resistance and light resistance than epoxy resins. When each of the first sealing member 3 and the second sealing member 4 contains a silicone resin as a main component, a light emitting device that emits light stably over a long period of time can be provided.
それぞれシリコーン樹脂を主成分として含む第一封止部材３と第二封止部材４とを用いて発光装置を構成する場合、第一封止部材３の屈折率と第二封止部材４の屈折率を共に大きくした方が取り出し効率は高くなるものの、屈折率がある値より大きくなると長期間の使用により封止部材が変色し易くなり、光の取り出し効率の劣化、色ずれも大きくなる。 When a light-emitting device is configured using the first sealing member 3 and the second sealing member 4 each containing a silicone resin as a main component, the refractive index of the first sealing member 3 and the refraction of the second sealing member 4 When both the ratios are increased, the extraction efficiency becomes higher. However, when the refractive index is higher than a certain value, the sealing member is likely to be discolored by long-term use, and the deterioration of the light extraction efficiency and the color shift increase.
それぞれシリコーン樹脂を主成分として含む第一封止部材３と第二封止部材４とを用いて発光装置を構成する場合には、第一封止部材３の第一屈折率を、第二封止部材４の第二屈折率より小さくなるように設定することにより、比較的高い光の取り出し効率を確保することができる。また、発光装置を長期間使用した場合であっても第一封止部材３及び第二封止部材４の変色が抑制される。 When the light emitting device is configured using the first sealing member 3 and the second sealing member 4 each containing a silicone resin as a main component, the first refractive index of the first sealing member 3 is set to the second sealing member. By setting it to be smaller than the second refractive index of the stop member 4, a relatively high light extraction efficiency can be ensured. Further, even when the light emitting device is used for a long time, discoloration of the first sealing member 3 and the second sealing member 4 is suppressed.
そこで、本実施形態の発光装置では、第一封止部材３及び第二封止部材４はそれぞれシリコーン樹脂を主成分として含むものとし、かつ第一封止部材３の第一屈折率を、第二封止部材４の第二屈折率より小さくなるように設定している。これにより、光の取り出し効率を高くしつつ、長期間使用した場合であっても第一封止部材３及び第二封止部材４の変色を抑制することができる。 Therefore, in the light emitting device of this embodiment, the first sealing member 3 and the second sealing member 4 each include a silicone resin as a main component, and the first refractive index of the first sealing member 3 is set to the second refractive index. It is set to be smaller than the second refractive index of the sealing member 4. Thereby, discoloration of the first sealing member 3 and the second sealing member 4 can be suppressed even when used for a long period of time while increasing the light extraction efficiency.
すなわち、第一封止部材３は、シリコーン樹脂を主成分として含んでいるとはいえ、発光素子１の直近にあるため発光素子１による光や熱の影響を強く受け、変色しやすい環境にある。この点を考慮して、第一封止部材３に主成分として含まれるシリコーン樹脂を第二封止部材４に主成分として含まれるシリコーン樹脂より屈折率が低いものとし、耐光性及び耐熱性をより高めている。長期間の使用による変色を効果的に抑えるためには、第一封止部材３に主成分として含まれるシリコーン樹脂の屈折率は１．４２以上１．５０以下であることが好ましい。屈折率の調整は、例えば、メチルフェニルシリコーン樹脂を用いる場合には、メチル基に対するフェニル基の割合を調整することにより、所望の屈折率を実現できる。
具体的には、メチルフェニルシリコーン樹脂は、メチル基に対するフェニル基の割合を高くすることにより、屈折率を高くすることができる。しかしながら、フェニル基の割合を高くし過ぎると変色しやすくなり、光取り出し効率を劣化させる原因となる。
That is, although the first sealing member 3 contains silicone resin as a main component, the first sealing member 3 is close to the light emitting element 1 and thus is strongly influenced by light and heat from the light emitting element 1 and is in an environment in which it is easily discolored. . Considering this point, the silicone resin contained as the main component in the first sealing member 3 is assumed to have a lower refractive index than the silicone resin contained as the main component in the second sealing member 4, and the light resistance and heat resistance are improved. It is higher. In order to effectively suppress discoloration due to long-term use, the refractive index of the silicone resin contained as the main component in the first sealing member 3 is preferably 1.42 or more and 1.50 or less. For example, when a methylphenyl silicone resin is used, the refractive index can be adjusted by adjusting the ratio of the phenyl group to the methyl group.
Specifically, the refractive index of the methylphenyl silicone resin can be increased by increasing the ratio of the phenyl group to the methyl group. However, if the ratio of the phenyl group is too high, the color is likely to change, which causes the light extraction efficiency to deteriorate.
また、第二封止部材４は、発光素子１からの光の影響が第一封止部材３よりも小さく、また発光装置の光取り出し効率を高くするためには、第二封止部材４の屈折率を高くすることが好ましい。そこで、第二封止部材４に主成分として含まれるシリコーン樹脂の屈折率を、第一封止部材３に主成分として含まれるシリコーン樹脂をより高くして、光取り出し効率を高くしている。第二封止部材４に主成分として含まれるシリコーン樹脂の屈折率は、１．５１以上１．５４以下であることが好ましく、これにより、光取り出し効率を高くしつつ、かつ長期間の使用による第二封止部材４自身の変色を抑えることができる。 The second sealing member 4 is less affected by the light from the light emitting element 1 than the first sealing member 3, and in order to increase the light extraction efficiency of the light emitting device, the second sealing member 4 It is preferable to increase the refractive index. Therefore, the refractive index of the silicone resin contained as the main component in the second sealing member 4 is made higher than that of the silicone resin contained as the main component in the first sealing member 3 to increase the light extraction efficiency. The refractive index of the silicone resin contained as the main component in the second sealing member 4 is preferably 1.51 or more and 1.54 or less, thereby increasing the light extraction efficiency and using for a long period of time. Discoloration of the second sealing member 4 itself can be suppressed.
また、第二封止部材４に主成分として含まれるシリコーン樹脂の屈折率を、第一封止部材３に主成分として含まれるシリコーン樹脂の屈折率より高くすることにより、第一封止部材３と第二封止部材４の界面における全反射を防ぐことができ、光の損失を減らすことができる。 In addition, by making the refractive index of the silicone resin contained as the main component in the second sealing member 4 higher than the refractive index of the silicone resin contained as the main component in the first sealing member 3, the first sealing member 3. And total reflection at the interface between the second sealing member 4 and the light loss can be reduced.
ここで、本明細書における屈折率は（株）アタゴ製アッベ屈折計にて２５℃条件下、液状状態、ナトリウムD線（５８９ｎｍ）の屈折率をいう。
また、第一封止部材３の膜厚は波長変換部材２および反射部材８の剥がれを防止する為に両者を被覆する様に形成する厚さであることが好ましい。第一封止部材３の厚さは、好ましくは１μｍ〜１５０μｍである。より好ましくは１０μｍ〜１００μｍである。特に好ましくは３０μｍ〜８０μｍである。
Here, the refractive index in the present specification means the refractive index of sodium D line (589 nm) in a liquid state at 25 ° C. with an Abbe refractometer manufactured by Atago Co., Ltd.
Moreover, it is preferable that the film thickness of the 1st sealing member 3 is the thickness formed so that both may be covered in order to prevent peeling of the wavelength conversion member 2 and the reflection member 8. FIG. The thickness of the first sealing member 3 is preferably 1 μm to 150 μm. More preferably, it is 10 micrometers-100 micrometers. Especially preferably, it is 30 micrometers-80 micrometers.
・評価１
本実施形態の発光装置の効果を実証するために、図１及び図２に示す構成の発光装置を作製して、光取り出し効率（相対光束）と長期信頼性（通電による色ずれ確認）を評価した。
ここでは、屈折率の異なるシリコーン樹脂を用いた６種類の発光装置を作製して評価した。この評価１では、各発光装置において、第一封止部材３及び第二封止部材４を屈折率が同じシリコーン樹脂により形成した。
発光素子１は発光ピーク波長４５０ｎｍの発光ダイオードであり、フリップチップ状態で導電性部材５上に接合部材７（例えばＡｕバンプ）を使用し載置される。
波長変換部材２はＹＡＧ系の蛍光体粒子（平均粒径８μｍ）を用い、電着法にて発光素子１を覆うように形成する。波長変換部材２の厚みは約３０μｍである。
反射部材８は酸化チタン（平均粒径約０．３μｍ）を用い、電着法にて発光素子１上の波長変換部材２以外の波長変換部材２上を覆う様に形成する。反射部材８の厚みは約２０μｍである。
第一封止部材３は、透光性樹脂であり、波長変換部材２および反射部材８の剥がれ防止の為、第一封止部材を含浸させ、また、両者を被覆する様に形成する。第一封止部材３はシリコーン樹脂を用いる。
第二封止部材４は、第一封止部材同様に透光性樹脂であり、圧縮成形により形成し、凸レンズ形状を有しており、第一封止部材と同一の材料としている。
また、光取り出し効率は、第一封止部材、第二封止部材の屈折率がともに１．４９６である発光装置の光束を１００とし、これを基準として、他の屈折率条件における出力値を算出した。長期信頼性試験（通電による色ずれ確認）は、常温で一定時間通電した後の初期値からの色ずれ量により評価した。その結果を、以下の表１に示す。
・ Evaluation 1
In order to demonstrate the effect of the light emitting device of this embodiment, a light emitting device having the configuration shown in FIGS. 1 and 2 is manufactured, and light extraction efficiency (relative light flux) and long-term reliability (color shift confirmation by energization) are evaluated. did.
Here, six types of light-emitting devices using silicone resins having different refractive indexes were produced and evaluated. In this evaluation 1, in each light emitting device, the first sealing member 3 and the second sealing member 4 were formed of a silicone resin having the same refractive index.
The light emitting element 1 is a light emitting diode having an emission peak wavelength of 450 nm, and is mounted on the conductive member 5 using a bonding member 7 (for example, Au bump) in a flip chip state.
The wavelength conversion member 2 is formed using YAG-based phosphor particles (average particle diameter of 8 μm) so as to cover the light emitting element 1 by an electrodeposition method. The thickness of the wavelength conversion member 2 is about 30 μm.
The reflecting member 8 is made of titanium oxide (average particle diameter of about 0.3 μm) so as to cover the wavelength conversion member 2 other than the wavelength conversion member 2 on the light emitting element 1 by electrodeposition. The thickness of the reflecting member 8 is about 20 μm.
The first sealing member 3 is a translucent resin, and is formed so as to impregnate the first sealing member and cover both in order to prevent the wavelength conversion member 2 and the reflection member 8 from peeling off. The first sealing member 3 uses a silicone resin.
The second sealing member 4 is a translucent resin like the first sealing member, is formed by compression molding, has a convex lens shape, and is made of the same material as the first sealing member.
In addition, the light extraction efficiency is defined as 100 for the luminous flux of the light emitting device in which the refractive index of both the first sealing member and the second sealing member is 1.496, and the output value under other refractive index conditions is based on this. Calculated. The long-term reliability test (confirmation of color misregistration by energization) was evaluated by the amount of color misregistration from the initial value after energization for a certain time at normal temperature. The results are shown in Table 1 below.
表１に示すように、屈折率が高くなるにつれ相対光束が高くなる傾向を示した。しかし、屈折率上昇させると発光装置の長期信頼性に関わる通電試験色ずれ量が大きくなる傾向が確認された。具体的には、表１に示すように、屈折率を例えば、１．５５とした場合、初期的に光取り出し効率が向上するが、長期間の使用により第一、第二封止部材３，４を構成する樹脂が変色して光取り出し効率は低下して発光出力が低下、及び色ずれが発生する。この樹脂の変色による光取り出し効率の低下は、主として、発光素子直近の第一封止部材３の樹脂の劣化が原因である。また、第一封止部材３と第二封止部材４の屈折率を同じにし、屈折率が１．４２より低くなると、目標とする光取り出し効率が得られない。 As shown in Table 1, the relative luminous flux tended to increase as the refractive index increased. However, it has been confirmed that when the refractive index is increased, the amount of color deviation in the current test relating to the long-term reliability of the light emitting device increases. Specifically, as shown in Table 1, when the refractive index is set to 1.55, for example, the light extraction efficiency is initially improved. 4 is discolored, the light extraction efficiency is lowered, the light emission output is lowered, and the color shift occurs. The decrease in light extraction efficiency due to the color change of the resin is mainly due to the deterioration of the resin of the first sealing member 3 in the immediate vicinity of the light emitting element. Moreover, if the refractive index of the 1st sealing member 3 and the 2nd sealing member 4 is made the same, and a refractive index will become lower than 1.42, the target light extraction efficiency will not be obtained.
・評価２
評価１により屈折率が高くなることで光束が高くなることが確認されたが、評価２では、第二封止部材４の屈折率を１．５３５とし、第一封止部材３の屈折率を１．４６，１．４８４，１．４９６，１．５２２とした４種類の発光装置を作製して光取り出し効率（相対光束）と長期信頼性（通電による色ずれ確認）を評価した。光取り出し効率の評価は、第二封止部材４の屈折率を１．５３５とし、第一封止部材３の屈折率を１．４６０とした発光装置の光束を100とし、これを基準として、相対光束により評価した。長期信頼性（通電による色ずれ確認）については、評価１と同様にした。
その結果を以下の表２に示す。
・ Evaluation 2
In evaluation 1, it was confirmed that the luminous flux was increased by increasing the refractive index. However, in evaluation 2, the refractive index of the second sealing member 4 was 1.535, and the refractive index of the first sealing member 3 was Four types of light emitting devices of 1.46, 1.484, 1.496, and 1.522 were manufactured and evaluated for light extraction efficiency (relative light flux) and long-term reliability (color shift confirmation by energization). The evaluation of the light extraction efficiency is based on the light flux of the light emitting device with the refractive index of the second sealing member 4 as 1.535 and the refractive index of the first sealing member 3 as 1.460, and this as a reference. Evaluation was based on relative luminous flux. About long-term reliability (color shift confirmation by electricity supply), it was made to be the same as evaluation 1.
The results are shown in Table 2 below.
表２に示した結果から、第二封止部材４の屈折率を１．５３５に固定した場合、第一封止部材３の屈折率を、１．４６０まで低くしても相対光束を低下させることなく、長期信頼性に関わる通電試験色ずれを抑えることできることが確認された。また、長期信頼性に関わる通電試験色ずれを抑えるために、第一封止部材３の屈折率は１．５０以下であることが好ましいことがわかる。 From the results shown in Table 2, when the refractive index of the second sealing member 4 is fixed to 1.535, the relative luminous flux is reduced even if the refractive index of the first sealing member 3 is lowered to 1.460. Without any problem, it was confirmed that the color deviation of the energization test related to long-term reliability can be suppressed. Further, it can be seen that the refractive index of the first sealing member 3 is preferably 1.50 or less in order to suppress the color deviation of the energization test related to long-term reliability.
１ 発光素子
２ 波長変換部材
３ 第一封止部材
４ 第二封止部材
５ 導電性部材
６ 支持体
７ 接合部材
８ 反射部材
９ 正極の電極端子
１０ 負極の電極端子
DESCRIPTION OF SYMBOLS 1 Light emitting element 2 Wavelength conversion member 3 1st sealing member 4 2nd sealing member 5 Conductive member 6 Support body 7 Joining member 8 Reflective member 9 Positive electrode terminal 10 Negative electrode terminal
Claims (5)
前記発光素子を覆う第一封止部材と、
前記第一封止部材を覆う第二封止部材と、
を備え、
前記第一封止部材及び前記第二封止部材はそれぞれシリコーン樹脂を主成分として含み、前記第一封止部材の第一屈折率は、前記第二封止部材の第二屈折率より小さいことを特徴とする発光装置。 A light emitting element;
A first sealing member covering the light emitting element;
A second sealing member covering the first sealing member;
With
Each of the first sealing member and the second sealing member contains a silicone resin as a main component, and the first refractive index of the first sealing member is smaller than the second refractive index of the second sealing member. A light emitting device characterized by the above.
前記第二屈折率は、１．５１以上１．５４以下であることを特徴とする請求項１記載の発光装置。 The first refractive index is 1.42 or more and 1.50 or less,
The light emitting device according to claim 1, wherein the second refractive index is 1.51 or more and 1.54 or less.
前記第一封止部材に含まれるシリコーン樹脂におけるメチル基に対するフェニル基の割合は、前記第二封止部材に含まれるシリコーン樹脂におけるメチル基に対するフェニル基の割合より小さいことを特徴とする請求項１又は２に記載の発光装置。 The silicone resin includes a methyl group and a phenyl group,
The ratio of the phenyl group with respect to the methyl group in the silicone resin contained in the first sealing member is smaller than the ratio of the phenyl group with respect to the methyl group in the silicone resin contained in the second sealing member. Or the light-emitting device of 2.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009040846A (en) * | 2007-08-07 | 2009-02-26 | Sony Chemical & Information Device Corp | Optical component sealing material and light emitting device |
| JP2011129901A (en) * | 2009-11-19 | 2011-06-30 | Mitsubishi Chemicals Corp | Method of manufacturing semiconductor light emitting device |
| JP2011521481A (en) * | 2008-05-28 | 2011-07-21 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic semiconductor components and printed circuit boards |
| WO2011145638A1 (en) * | 2010-05-18 | 2011-11-24 | Jnc株式会社 | Novel organosilicon compound and thermosetting resin composition, cured resin, and semiconductor sealing material containing said organosilicon compound |
| WO2012081247A1 (en) * | 2010-12-17 | 2012-06-21 | パナソニック株式会社 | Led device and method for manufacturing same |
| US20120235190A1 (en) * | 2011-03-18 | 2012-09-20 | Cree, Inc. | Encapsulant with index matched thixotropic agent |
| WO2013011628A1 (en) * | 2011-07-19 | 2013-01-24 | パナソニック株式会社 | Light emitting device and method for manufacturing same |
-
2014
- 2014-12-26 JP JP2014265773A patent/JP6628473B2/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009040846A (en) * | 2007-08-07 | 2009-02-26 | Sony Chemical & Information Device Corp | Optical component sealing material and light emitting device |
| JP2011521481A (en) * | 2008-05-28 | 2011-07-21 | オスラム オプト セミコンダクターズ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Optoelectronic semiconductor components and printed circuit boards |
| JP2011129901A (en) * | 2009-11-19 | 2011-06-30 | Mitsubishi Chemicals Corp | Method of manufacturing semiconductor light emitting device |
| WO2011145638A1 (en) * | 2010-05-18 | 2011-11-24 | Jnc株式会社 | Novel organosilicon compound and thermosetting resin composition, cured resin, and semiconductor sealing material containing said organosilicon compound |
| WO2012081247A1 (en) * | 2010-12-17 | 2012-06-21 | パナソニック株式会社 | Led device and method for manufacturing same |
| US20120235190A1 (en) * | 2011-03-18 | 2012-09-20 | Cree, Inc. | Encapsulant with index matched thixotropic agent |
| WO2013011628A1 (en) * | 2011-07-19 | 2013-01-24 | パナソニック株式会社 | Light emitting device and method for manufacturing same |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11482653B2 (en) | 2018-06-05 | 2022-10-25 | Samsung Electronics Co., Ltd. | Light emitting diode apparatus |
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