JP2016115894A - Housing structure of semiconductor power converter - Google Patents

Housing structure of semiconductor power converter Download PDF

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JP2016115894A
JP2016115894A JP2014255745A JP2014255745A JP2016115894A JP 2016115894 A JP2016115894 A JP 2016115894A JP 2014255745 A JP2014255745 A JP 2014255745A JP 2014255745 A JP2014255745 A JP 2014255745A JP 2016115894 A JP2016115894 A JP 2016115894A
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semiconductor
housing
units
wind tunnel
semiconductor units
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JP6497059B2 (en
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暢祐 宇埜
Nobusuke Uno
暢祐 宇埜
洋 城市
Hiroshi Shiroichi
洋 城市
優 大淵
Masaru Obuchi
優 大淵
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide a housing structure of semiconductor power converter capable of passing the cooling air sufficiently even to a lower semiconductor unit, without increasing pressure loss under an air duct, by dividing a plurality of semiconductor units into groups, and providing an air duct for each group.SOLUTION: A housing structure of semiconductor power converter is constituted of a plurality of semiconductor units 111, air ducts 140, 141 provided for each group of the plurality of semiconductor units, and a ventilation hole 150 provided in the ceiling board of the housing. Cooling air 130 passing through the semiconductor units 111 is taken in from the front of the semiconductor units 111 by means of a cooling fan 121, and when passing through the semiconductor units 111, the cooling air that has cooled the internal semiconductors passes through an air duct 140 or 141 provided for each group, before being discharged from an air vent 150 provided in the ceiling board of the housing.SELECTED DRAWING: Figure 1

Description

本発明は、複数台の半導体ユニットを含む半導体電力変換装置の筐体構造に関する。   The present invention relates to a housing structure of a semiconductor power conversion device including a plurality of semiconductor units.

半導体電力変換装置は、その筐体構造の内部に収納される半導体ユニットが主体であり、当該半導体ユニットは電力変換を行うものであるが電力変換の際に内部の半導体が発熱するため、冷却を行う必要がある。従来、半導体ユニットを冷却するには、冷却ファンを用いた強制風冷方式により冷却するのが一般的であった。   A semiconductor power conversion device is mainly a semiconductor unit housed in its housing structure, and the semiconductor unit performs power conversion, but the internal semiconductor generates heat during power conversion. There is a need to do. Conventionally, in order to cool a semiconductor unit, it has been generally cooled by a forced air cooling method using a cooling fan.

図3(a)は、下記特許文献1にも開示されているような、従来から用いられている複数台の半導体ユニットを多段に積み重ねて搭載した半導体電力変換装置の筐体構造を示す正面図、図3(b)は図3(a)の側面図、および、図3(c)は図3(a)の複数台の半導体ユニットを含む半導体電力変換装置の筐体構造を示す断面図で上面から見た図である。   FIG. 3A is a front view showing a housing structure of a semiconductor power conversion apparatus in which a plurality of conventionally used semiconductor units are stacked and mounted as disclosed in Patent Document 1 below. 3 (b) is a side view of FIG. 3 (a), and FIG. 3 (c) is a cross-sectional view showing a housing structure of a semiconductor power conversion device including a plurality of semiconductor units of FIG. 3 (a). It is the figure seen from the upper surface.

図3に示されるように半導体電力変換装置1は、筐体内の上下に設けたトレー(不図示)にそれぞれ搭載された複数台の半導体ユニット11と、風洞40と、筐体の天井板(不図示)に設けられた換気孔50とから構成されている。半導体ユニット11には、それぞれ冷却ファン21が各ユニットの後部に配置されており、各半導体ユニット11を冷却風により冷却している。   As shown in FIG. 3, the semiconductor power conversion device 1 includes a plurality of semiconductor units 11, a wind tunnel 40, and a ceiling plate (not shown) mounted on trays (not shown) provided at the top and bottom of the casing. It is comprised from the ventilation hole 50 provided in illustration. Each semiconductor unit 11 is provided with a cooling fan 21 at the rear of each unit, and each semiconductor unit 11 is cooled by cooling air.

図3(b)に示すように、各半導体ユニット11の冷却ファン21により正面より冷却風が取り込まれ、半導体ユニット11を通過する際、内部の半導体を冷却する。半導体を冷却した冷却風30は、風洞40を通り、筐体の天井板に設けられた換気孔50から外に排気される。   As shown in FIG. 3B, cooling air is taken from the front by the cooling fan 21 of each semiconductor unit 11, and the internal semiconductor is cooled when passing through the semiconductor unit 11. The cooling air 30 that has cooled the semiconductor passes through the wind tunnel 40 and is exhausted through a ventilation hole 50 provided in the ceiling plate of the housing.

しかし上記した従来の、複数台の半導体ユニット11を搭載した半導体電力変換装置1では、それぞれの半導体ユニット11が冷却ファン21を駆動しており、下部の半導体ユニット11になるにつれ、上部の半導体ユニット11より排出される冷却風30により圧力損失が大きくなり、冷却風量・風速が低下する。そのため、下部に置かれた半導体ユニット11を十分に冷却できずにいたため、半導体ユニット11を構成する電気品の寿命低下や半導体の破損にいたる可能性があった。   However, in the above-described conventional semiconductor power conversion device 1 equipped with a plurality of semiconductor units 11, each semiconductor unit 11 drives a cooling fan 21, and as the lower semiconductor unit 11 is formed, the upper semiconductor unit 11 is driven. 11, the pressure loss is increased by the cooling air 30 discharged from the air 11, and the cooling air volume and the air speed are reduced. For this reason, the semiconductor unit 11 placed in the lower part could not be sufficiently cooled, and there was a possibility that the life of the electrical product constituting the semiconductor unit 11 would be reduced or the semiconductor could be damaged.

特開2006−311679号公報JP 2006-311679 A

図3に示したような従来の半導体電力変換装置の筐体構造では、それぞれの半導体ユニット11に必要な冷却風が、他の半導体ユニット11が排気する冷却風によって圧力損失が大きくなり、下部の半導体ユニット11を十分に冷却できずに搭載した電気品の寿命の低下や熱耐性が低い機器の破損にいたるという問題があった。   In the case structure of the conventional semiconductor power converter as shown in FIG. 3, the cooling air necessary for each semiconductor unit 11 increases pressure loss due to the cooling air exhausted by the other semiconductor units 11, There was a problem that the semiconductor unit 11 could not be sufficiently cooled, resulting in a decrease in the life of an electrical product on which the semiconductor unit 11 was mounted and damage to a device having low heat resistance.

そこで、本発明の目的は、複数台の半導体ユニットをグループに分け、それぞれのグループごとに風洞を設けることで、風洞下部の圧力損失を大きくすることなく、下部の半導体ユニットにも十分な冷却風を通過させることが可能な半導体電力変換装置の筐体構造を提供することにある。   Accordingly, an object of the present invention is to divide a plurality of semiconductor units into groups and provide a wind tunnel for each group, so that sufficient cooling air is supplied to the lower semiconductor unit without increasing the pressure loss at the lower part of the wind tunnel. It is in providing the housing structure of the semiconductor power converter device which can let pass.

上記課題を解決するために請求項1記載の発明は、複数台の半導体ユニットを多段に積み重ねて搭載した半導体電力変換装置の筐体構造において、複数の半導体ユニットに必要な冷却風を通過させるために、複数台の半導体ユニットをグループに分け、それぞれのグループごとに風洞を設け、半導体ユニットを通過した冷却風が上記グループごとに設けられた風洞を介して上記筐体外に排気されることを特徴とするものである。   In order to solve the above-mentioned problem, the invention according to claim 1 is to allow a plurality of semiconductor units to pass cooling air necessary for a plurality of semiconductor units in a housing structure of a semiconductor power conversion device in which a plurality of semiconductor units are stacked and mounted in multiple stages. In addition, a plurality of semiconductor units are divided into groups, a wind tunnel is provided for each group, and the cooling air that has passed through the semiconductor units is exhausted outside the housing through the wind tunnel provided for each group. It is what.

また請求項2記載の発明は、請求項1記載の発明において、上記グループごとに設けられた風洞は、上記冷却風が上記筐体に収納された半導体ユニットの最上段から数えて奇数番目を通過するようにされた第1の風洞と、上記冷却風が上記筐体に収納された半導体ユニットの最上段から数えて偶数番目を通過するようにされた第2の風洞と、で構成されていることを特徴とするものである。   According to a second aspect of the present invention, in the first aspect of the present invention, the wind tunnel provided for each group passes an odd number of the cooling air from the uppermost stage of the semiconductor unit housed in the housing. And a second wind tunnel configured to allow the cooling air to pass through even-numbered counting units from the uppermost stage of the semiconductor unit housed in the housing. It is characterized by this.

また請求項3記載の発明は、請求項2記載の発明において、上記第1及び第2の風洞は、上記筐体内に設けたトレーに板金を曲げ加工しさらに溶接することによって構成したことを特徴とすることを特徴とするものである。   According to a third aspect of the present invention, in the second aspect of the invention, the first and second wind tunnels are formed by bending and further welding a sheet metal to a tray provided in the casing. It is characterized by that.

また請求項4記載の発明は、請求項1記載の発明において、上記半導体ユニットのグループは上段から順に所定数の半導体ユニットで構成されていることを特徴とするものである。   According to a fourth aspect of the invention, in the first aspect of the invention, the group of semiconductor units is composed of a predetermined number of semiconductor units in order from the top.

また請求項5記載の発明は、請求項1記載の発明において、上記半導体ユニットのグループを構成する半導体ユニットの数は、下段よりも上段の方が多くなるように構成されていることを特徴とするものである。   The invention described in claim 5 is characterized in that, in the invention described in claim 1, the number of semiconductor units constituting the group of the semiconductor units is configured such that the upper stage is larger than the lower stage. To do.

また請求項6記載の発明は、請求項1記載の発明において、上記半導体ユニットのグループを構成する半導体ユニットの数は、上段よりも下段の方が多くなるように構成されていることを特徴とするものである。   The invention described in claim 6 is characterized in that, in the invention described in claim 1, the number of semiconductor units constituting the group of the semiconductor units is configured so that the number in the lower stage is larger than that in the upper stage. To do.

また請求項7記載の発明は、請求項1記載の発明において、上記グループごとに設けられた風洞は、上記冷却風が上記筐体に収納された半導体ユニットの最上段から数えて第1及び第2の半導体ユニットを通過するようにされた第1の風洞と、上記冷却風が上記筐体に収納された半導体ユニットの最上段から数えて最上段から数えて第3及び第4の半導体ユニットを通過するようにされた第2の風洞と、上記冷却風が上記筐体に収納された半導体ユニットの最上段から数えて第5及び第6の半導体ユニットを通過するようにされた第3の風洞と、より構成されていることを特徴とするものである。   According to a seventh aspect of the present invention, in the first aspect of the present invention, the wind tunnel provided for each of the groups includes the first and the first counts from the top of the semiconductor unit in which the cooling air is housed in the housing. A first wind tunnel adapted to pass through two semiconductor units, and third and fourth semiconductor units counted from the uppermost stage of the semiconductor unit in which the cooling air is housed in the housing. A second wind tunnel configured to pass through, and a third wind tunnel configured such that the cooling air passes through the fifth and sixth semiconductor units counted from the uppermost stage of the semiconductor unit housed in the housing. It is characterized by being comprised.

また請求項8記載の発明は、請求項7記載の発明において、上記第1ないし第3の風洞は、上記筐体内に設けたトレーに板金を曲げ加工しさらに溶接することによって構成したことを特徴とするものである。   The invention according to claim 8 is the invention according to claim 7, wherein the first to third wind tunnels are formed by bending and further welding a sheet metal to a tray provided in the casing. It is what.

本発明によれば、複数台の半導体ユニットをグループに分け、それぞれのグループごとに風洞を設けて複数台の半導体ユニットを通過する冷却風を略均一にすることで風洞下部の圧力損失を高めることなく冷却することが可能となるため、半導体ユニット内部の機器の寿命の低下や機器の破損が起きる可能性を減らすことができる。つまり、複数台の半導体ユニットのグループごとに風洞を設けることで複数台の半導体ユニットを略均一に冷却できる半導体電力変換装置の筐体構造を実現することが可能となる。   According to the present invention, a plurality of semiconductor units are divided into groups, a wind tunnel is provided for each group, and the cooling air passing through the plurality of semiconductor units is made substantially uniform to increase the pressure loss at the bottom of the wind tunnel. Therefore, it is possible to reduce the possibility that the life of the equipment inside the semiconductor unit will be reduced and the equipment may be damaged. That is, by providing a wind tunnel for each group of a plurality of semiconductor units, it is possible to realize a housing structure of a semiconductor power conversion device that can cool the plurality of semiconductor units substantially uniformly.

本発明の第1の実施例に係る複数台の半導体ユニットを含む半導体電力変換装置の筐体構造を示す、正面図、左側面図、右側面図、および、断面図である。1 is a front view, a left side view, a right side view, and a cross-sectional view showing a housing structure of a semiconductor power conversion device including a plurality of semiconductor units according to a first embodiment of the present invention. 本発明の第2の実施例に係る複数台の半導体ユニットを含む半導体電力変換装置の筐体構造を示す、正面図、側面図、および、断面図である。It is the front view, side view, and sectional drawing which show the housing structure of the semiconductor power converter device containing the several semiconductor unit which concerns on the 2nd Example of this invention. 従来の複数台の半導体ユニットを含む半導体電力変換装置の筐体構造を示す、正面図、側面図、および、断面図である。It is the front view, side view, and sectional drawing which show the housing | casing structure of the semiconductor power converter device containing the conventional several semiconductor unit.

以下、本発明の実施の形態について、図を参照しながら詳細に説明する。   Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

図1(a)は、本発明の第1の実施例に係る複数台の半導体ユニットを含む半導体電力変換装置の筐体構造を示す正面図、図1(b)は図1(a)の左側面図、図1(c)は図1(a)の右側面図、および、図1(d)は図1(a)の複数台の半導体ユニットを含む半導体電力変換装置の筐体構造を示す断面図で上面から見た図である。   1A is a front view showing a housing structure of a semiconductor power conversion device including a plurality of semiconductor units according to the first embodiment of the present invention, and FIG. 1B is a left side of FIG. 1A. FIG. 1C is a right side view of FIG. 1A, and FIG. 1D is a housing structure of a semiconductor power conversion device including a plurality of semiconductor units of FIG. 1A. It is the figure seen from the upper surface in sectional drawing.

図1(a)において、半導体電力変換装置101は、多段に積み重ねられた複数台の半導体ユニット111、複数台の半導体ユニット111のグループごとに設けられた風洞140,141、および、筐体の天井板(不図示)に設けられた換気孔150から構成されている。   1A, a semiconductor power conversion device 101 includes a plurality of semiconductor units 111 stacked in multiple stages, wind tunnels 140 and 141 provided for each group of the plurality of semiconductor units 111, and a ceiling of a housing. It is comprised from the ventilation hole 150 provided in the board (not shown).

半導体ユニット111を通過する冷却風130は、図1(b),(c),(d)に示すように、冷却ファン121により半導体ユニット111の正面より取り込まれ、半導体ユニット111を通過する際、内部の半導体を冷却した冷却風は複数台の半導体ユニットのグループごとに設けられた風洞140または風洞141を通り、筐体の天井板に設けられた換気孔150より装置外(筐体外)へ排気される。なお、複数台の半導体ユニット111のグループごとに設けられた風洞140、風洞141を互いに区画する構造自体は筐体内に設けたトレー(不図示)を考慮しつつ当業者が通常の創作力を発揮することで容易に実現できるものである。例えば、板金に曲げ加工を施しさらに溶接加工等を施すことで実現可能である。   The cooling air 130 passing through the semiconductor unit 111 is taken from the front of the semiconductor unit 111 by the cooling fan 121 and passes through the semiconductor unit 111 as shown in FIGS. The cooling air that has cooled the internal semiconductor passes through the wind tunnel 140 or the wind tunnel 141 provided for each group of a plurality of semiconductor units, and is exhausted to the outside of the apparatus (outside the casing) through the ventilation holes 150 provided in the ceiling plate of the casing. Is done. Note that the wind tunnel 140 provided for each group of the plurality of semiconductor units 111 and the structure itself for partitioning the wind tunnel 141 exhibit normal creativity while considering a tray (not shown) provided in the housing. This can be easily realized. For example, this can be realized by bending the sheet metal and further performing welding.

風洞140には最上段より数えて奇数段目の半導体ユニット111の冷却風が通り、風洞141には最上段より数えて偶数段目の半導体ユニット111の冷却風が通るようにされている。   The cooling air of the odd-numbered semiconductor units 111 counted from the uppermost stage passes through the wind tunnel 140, and the cooling air of the even-numbered semiconductor units 111 counted from the uppermost stage passes through the wind tunnel 141.

冷却風130が各半導体ユニットを通過し、複数台の半導体ユニット111のグループごとに設けられた風洞140,141を経て、筐体の天井板に設けられた換気孔150より装置外に排気されるまでの経路を分けることにより、風洞下部の圧力損失が大きくなることなく、筐体内に搭載された各半導体ユニット111の冷却を略均一に行うことができる。   Cooling air 130 passes through each semiconductor unit, passes through air tunnels 140 and 141 provided for each group of a plurality of semiconductor units 111, and is exhausted out of the apparatus through ventilation holes 150 provided in the ceiling plate of the housing. By dividing the path up to, the semiconductor units 111 mounted in the housing can be cooled substantially uniformly without increasing the pressure loss in the lower part of the wind tunnel.

図2(a)は、本発明の第2の実施例に係る複数台の半導体ユニットを含む半導体電力変換装置の筐体構造を示す正面図、図2(b)は図2(a)の側面図、および、図2(c)は図2(a)の複数台の半導体ユニットを含む半導体電力変換装置の筐体構造を示す断面図で上面から見た図である。   FIG. 2A is a front view showing a housing structure of a semiconductor power conversion device including a plurality of semiconductor units according to a second embodiment of the present invention, and FIG. 2B is a side view of FIG. FIG. 2 and FIG. 2C are cross-sectional views showing the housing structure of the semiconductor power conversion device including the plurality of semiconductor units in FIG.

図2(a)において、半導体電力変換装置201は、多段に積み重ねられた複数台の半導体ユニット211、複数台の半導体ユニット211のグループごとに設けられた風洞240,241,242、および、筐体の天井板(不図示)に設けられた換気孔250から構成されている。   2A, a semiconductor power conversion device 201 includes a plurality of semiconductor units 211 stacked in multiple stages, wind tunnels 240, 241, and 242 provided for each group of the plurality of semiconductor units 211, and a housing. It is comprised from the ventilation hole 250 provided in the ceiling board (not shown).

半導体ユニット211を通過する冷却風230は、図2(b),(c)に示すように、冷却ファン221により半導体ユニット211の正面より取り込まれ、半導体ユニット211を通過する際、内部の半導体を冷却する。   2B and 2C, the cooling air 230 passing through the semiconductor unit 211 is taken in from the front of the semiconductor unit 211 by the cooling fan 221, and when passing through the semiconductor unit 211, the internal semiconductor is removed. Cooling.

半導体を冷却した冷却風は、複数台の半導体ユニットのグループごとに設けられた風洞240,241,242を通り、筐体の天井板に設けられた換気孔250より装置外へ排気される。   The cooling air that has cooled the semiconductor passes through the wind tunnels 240, 241, and 242 provided for each group of a plurality of semiconductor units, and is exhausted out of the apparatus through the ventilation holes 250 provided in the ceiling plate of the housing.

図示されているように風洞240には最上段より2台の半導体ユニット211の冷却風が通り、風洞241にはその下にある2台の半導体ユニット211の冷却風が、風洞242には更にその下にある2台の半導体ユニット211の冷却風が通るようにされている。   As shown in the figure, the cooling wind of the two semiconductor units 211 passes through the wind tunnel 240 from the uppermost stage, the cooling wind of the two semiconductor units 211 underneath the wind tunnel 241, and further, Cooling air flows through the two semiconductor units 211 located below.

なお、複数台の半導体ユニット211のグループごとに設けられた風洞240、風洞241、風洞242を互いに区画する構造自体は筐体内に設けたトレー(不図示)を考慮しつつ当業者が通常の創作力を発揮することで容易に実現できるものである。例えば、板金に曲げ加工を施しさらに溶接加工等を施すことで実現可能である。   The structure of the wind tunnel 240, the wind tunnel 241, and the wind tunnel 242, which are provided for each group of the plurality of semiconductor units 211, is normally created by a person skilled in the art in consideration of a tray (not shown) provided in the housing. It can be easily realized by demonstrating power. For example, this can be realized by bending the sheet metal and further performing welding.

冷却風230が各半導体ユニットを通過し、複数台の半導体ユニットのグループごとに設けられた風洞240,241,242を経て、筐体の天井板(不図示)に設けられた換気孔250より装置外に排気されるまでの経路を分けることにより、風洞下部の圧力損失が大きくなることなく、筐体内に搭載された各半導体ユニット211の冷却を略均一に行うことができる。   The cooling air 230 passes through each semiconductor unit, passes through the wind tunnels 240, 241, and 242 provided for each group of a plurality of semiconductor units, and is supplied from a ventilation hole 250 provided in a ceiling plate (not shown) of the housing. By dividing the path until the air is exhausted outside, the semiconductor units 211 mounted in the housing can be cooled substantially uniformly without increasing the pressure loss at the bottom of the wind tunnel.

なお、上記実施例では、各グループは2台の半導体ユニットで構成されているが、グループを構成する半導体ユニットの数は、適宜、選択することができる。各半導体ユニットの圧力損失値を適切にするため、例えば、上段のグループを構成する半導体ユニットの数を下段のグループを構成する半導体ユニットの数よりも多くすることができる。あるいは、下段のグループを構成する半導体ユニットの数を上段のグループを構成する半導体ユニットの数よりも多くすることができる。   In the above embodiment, each group is composed of two semiconductor units. However, the number of semiconductor units constituting the group can be selected as appropriate. In order to make the pressure loss value of each semiconductor unit appropriate, for example, the number of semiconductor units constituting the upper group can be made larger than the number of semiconductor units constituting the lower group. Alternatively, the number of semiconductor units constituting the lower group can be made larger than the number of semiconductor units constituting the upper group.

101、201 半導体電力変換装置
111、211 半導体ユニット
121、221 冷却ファン
130、230 冷却風
140、141、240、241、242 風洞
150、250 換気孔
101, 201 Semiconductor power conversion device 111, 211 Semiconductor unit 121, 221 Cooling fan 130, 230 Cooling air 140, 141, 240, 241, 242 Wind tunnel 150, 250 Ventilation hole

Claims (8)

複数台の半導体ユニットを多段に積み重ねて搭載した半導体電力変換装置の筐体構造において、複数の半導体ユニットに必要な冷却風を通過させるために、複数台の半導体ユニットのグループごとに風洞を設け、半導体ユニットを通過した冷却風が前記グループごとの風洞を介して前記筐体外に排気されることを特徴とする半導体電力変換機器の筐体構造。   In the housing structure of the semiconductor power conversion device in which a plurality of semiconductor units are stacked and mounted, in order to pass the cooling air necessary for the plurality of semiconductor units, a wind tunnel is provided for each group of the plurality of semiconductor units, A housing structure of a semiconductor power conversion device, wherein cooling air that has passed through a semiconductor unit is exhausted outside the housing through a wind tunnel for each group. 前記グループごとに設けられた風洞は、前記冷却風が前記筐体に収納された半導体ユニットの最上段から数えて奇数番目を通過するようにされた第1の風洞と、前記冷却風が前記筐体に収納された半導体ユニットの最上段から数えて偶数番目を通過するようにされた第2の風洞と、で構成されていることを特徴とする請求項1記載の半導体電力変換機器の筐体構造。   The wind tunnel provided for each group includes a first wind tunnel in which the cooling air passes an odd number from the uppermost stage of the semiconductor unit housed in the housing, and the cooling air flows in the housing. The housing of the semiconductor power conversion device according to claim 1, comprising: a second wind tunnel configured to pass through an even number counted from the uppermost stage of the semiconductor unit housed in the body. Construction. 前記第1及び第2の風洞は、前記筐体内に設けたトレーに板金を曲げ加工しさらに溶接することによって構成したことを特徴とすることを特徴とする請求項2記載の半導体電力変換機器の筐体構造。   3. The semiconductor power conversion device according to claim 2, wherein the first and second wind tunnels are formed by bending and further welding a sheet metal to a tray provided in the casing. 4. Enclosure structure. 前記半導体ユニットのグループは上段から順に所定数の半導体ユニットで構成されていることを特徴とする請求項1記載の半導体電力変換機器の筐体構造。   2. The housing structure of a semiconductor power conversion device according to claim 1, wherein the group of the semiconductor units includes a predetermined number of semiconductor units in order from the top. 前記半導体ユニットのグループを構成する半導体ユニットの数は、下段よりも上段の方が多くなるように構成されていることを特徴とする請求項1記載の半導体電力変換機器の筐体構造。   2. The housing structure of a semiconductor power conversion device according to claim 1, wherein the number of semiconductor units constituting the group of semiconductor units is configured such that the upper stage has a larger number than the lower stage. 前記半導体ユニットのグループを構成する半導体ユニットの数は、上段よりも下段の方が多くなるように構成されていることを特徴とする請求項1記載の半導体電力変換機器の筐体構造。   2. The housing structure of a semiconductor power conversion device according to claim 1, wherein the number of semiconductor units constituting the group of semiconductor units is configured to be larger in the lower stage than in the upper stage. 前記グループごとに設けられた風洞は、前記冷却風が前記筐体に収納された半導体ユニットの最上段から数えて第1及び第2の半導体ユニットを通過するようにされた第1の風洞と、前記冷却風が前記筐体に収納された半導体ユニットの最上段から数えて最上段から数えて第3及び第4の半導体ユニットを通過するようにされた第2の風洞と、前記冷却風が前記筐体に収納された半導体ユニットの最上段から数えて第5及び第6の半導体ユニットを通過するようにされた第3の風洞と、より構成されていることを特徴とする請求項1記載の半導体電力変換機器の筐体構造。   A wind tunnel provided for each group includes a first wind tunnel in which the cooling air passes through the first and second semiconductor units counted from the uppermost stage of the semiconductor unit housed in the housing; A second wind tunnel in which the cooling air is counted from the uppermost stage of the semiconductor unit housed in the housing and passed through the third and fourth semiconductor units, and the cooling air is 2. The third wind tunnel configured to pass through the fifth and sixth semiconductor units counted from the uppermost stage of the semiconductor unit housed in the casing, and the third wind tunnel according to claim 1, Housing structure for semiconductor power conversion equipment. 前記第1ないし第3の風洞は、前記筐体内に設けたトレーに板金を曲げ加工しさらに溶接することによって構成したことを特徴とする請求項7記載の半導体電力変換機器の筐体構造。   8. The housing structure of a semiconductor power conversion device according to claim 7, wherein the first to third wind tunnels are formed by bending and further welding a sheet metal to a tray provided in the housing.
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KR20230028551A (en) 2021-07-05 2023-02-28 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 power converter
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KR20230028551A (en) 2021-07-05 2023-02-28 도시바 미쓰비시덴키 산교시스템 가부시키가이샤 power converter
JP7577639B2 (en) 2021-11-11 2024-11-05 株式会社Tmeic Power Conversion Equipment

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