JP2016050355A - Methods for manufacturing copper foil with carrier, copper-clad laminate, and printed wiring board, and copper-clad laminate, electronic device, and copper foil with carrier - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing copper foil with carrier that provides a good circuit formability to an ultra-thin copper layer, and also to provide copper foil with carrier that provides a good wettability with respect to the etchant.SOLUTION: Provided is a method for manufacturing copper foil with carrier, including a heat treatment step for carrying out a heat treatment to copper foil with carrier having a carrier, an intermediate layer, an ultra-thin copper layer, and a surface treatment layer comprising a silane coupling treatment layer, in this order, at a heating temperature of 100°C to 220°C for 1 to 8 hours.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a method for producing a copper foil with a carrier, a method for producing a copper clad laminate, a method for producing a printed wiring board, a copper clad laminate, an electronic device, and a copper foil with a carrier.

  Generally, a printed wiring board is manufactured through a process in which an insulating substrate is bonded to a copper foil to form a copper-clad laminate, and then a conductor pattern is formed on the copper foil surface by etching. In recent years, with the increasing needs for miniaturization and higher performance of electronic devices, higher density mounting of components and higher frequency of signals have progressed, and conductor patterns have become finer (fine pitch) and higher frequency than printed circuit boards. Response is required.

  Recently, copper foils with a thickness of 9 μm or less and further with a thickness of 5 μm or less have been required in response to the fine pitch, but such ultra-thin copper foils have low mechanical strength and are used in the manufacture of printed wiring boards. Copper foil with a carrier has appeared, in which a thick metal foil is used as a carrier, and an ultrathin copper layer is electrodeposited through a release layer, since it is easily broken or wrinkled. After bonding the surface of the ultrathin copper layer to an insulating substrate and thermocompression bonding, the carrier is peeled and removed through the peeling layer. After forming a circuit pattern with resist on the exposed ultra-thin copper layer, the micro-thin copper layer is etched with a sulfuric acid-hydrogen peroxide etchant (MSAP: Modified-Semi-Additive-Process). Is formed.

  Here, for the surface of the ultrathin copper layer of the copper foil with a carrier that becomes the adhesive surface with the resin, the peel strength between the ultrathin copper layer and the resin base material is mainly sufficient, and the peel strength Is required to be sufficiently retained after high-temperature heating, wet processing, soldering, chemical processing, and the like. As a method of increasing the peel strength between the ultrathin copper layer and the resin base material, generally, a large amount of roughened particles are adhered on the ultrathin copper layer having a large surface profile (unevenness, roughness). The method is representative.

  However, if a very thin copper layer with such a large profile (irregularity, roughness) is used on a semiconductor package substrate that needs to form a particularly fine circuit pattern among printed wiring boards, unnecessary copper particles during circuit etching Will remain, causing problems such as poor insulation between circuit patterns.

  For this reason, in WO2004 / 005588 (Patent Document 1), a copper foil with a carrier that is not subjected to a roughening treatment on the surface of an ultrathin copper layer is used as a copper foil with a carrier for use in a fine circuit including a semiconductor package substrate. It has been tried. The adhesion (peeling strength) between the ultrathin copper layer not subjected to such roughening treatment and the resin is affected by the low profile (unevenness, roughness, roughness) of the general copper foil for printed wiring boards. There is a tendency to decrease when compared. Therefore, the further improvement is calculated | required about copper foil with a carrier.

  Therefore, in Japanese Patent Application Laid-Open No. 2007-007937 (Patent Document 2) and Japanese Patent Application Laid-Open No. 2010-006071 (Patent Document 3), the surface of the ultrathin copper foil with carrier that contacts (adheres) the polyimide resin substrate is Ni. It is described that a layer or / and a Ni alloy layer are provided, a chromate layer is provided, a Cr layer or / and a Cr alloy layer are provided, a Ni layer and a chromate layer are provided, and a Ni layer and a Cr layer are provided. Has been. By providing these surface treatment layers, the adhesion strength between the polyimide resin substrate and the ultra-thin copper foil with carrier is not roughened, or the desired adhesive strength is achieved while reducing the degree of the roughening treatment (miniaturization). It has gained. Further, it is described that the surface treatment is performed with a silane coupling agent or the rust prevention treatment is performed.

WO2004 / 005588 JP 2007-007937 A JP 2010-006071 A

  In the development of a copper foil with a carrier, the emphasis has so far been on ensuring the peel strength between the ultrathin copper layer and the resin substrate. Therefore, sufficient investigation has not yet been made on the circuit formability of the ultrathin copper layer, and there is still room for improvement.

  Circuit formation for an ultrathin copper layer generally involves removing a carrier after laminating an ultrathin copper layer on a resin substrate, and then providing a predetermined pattern of resist on the ultrathin copper layer with a predetermined etching solution. Etching is performed to remove the copper layer that is not covered with the resist. Thereafter, by removing the resist, a circuit having a desired conductor pattern is manufactured.

  Here, when the etching process is performed with a predetermined etching solution, if the wettability to the etching solution in the vicinity of the interface between the ultrathin copper layer and the resin base material is poor, the wetting and spreading of the etching solution becomes insufficient. In that case, an etching nonuniformity part arises in the interface vicinity part with a resin base material, and circuit linearity becomes bad. The present invention provides a method for producing a carrier-attached copper foil having good circuit formation for an ultrathin copper layer. Moreover, this invention provides the copper foil with a carrier with favorable wettability of etching liquid.

  The present invention completed on the basis of the above knowledge, in one aspect, the carrier temperature, the intermediate layer, the ultrathin copper layer, the copper foil with a carrier provided with the surface treatment layer including the silane coupling treatment layer in this order, the heating temperature It is a manufacturing method of copper foil with a carrier including the heat processing process which heat-processes at 100 to 220 degreeC for 1 hour-8 hours.

  In another aspect of the present invention, the temperature rise rate until reaching the heating temperature exceeds 50 ° C./hour for the carrier-attached copper foil provided with the carrier, the intermediate layer, the ultrathin copper layer, and the surface treatment layer in this order. As above, it is a manufacturing method of copper foil with a carrier including the heat processing process which performs the heat processing for 1 hour-8 hours at the heating temperature of 100 to 220 degreeC.

  In one embodiment of the method for producing a copper foil with a carrier according to the present invention, the heating rate in the heat treatment is 200 ° C./hour or less.

  The manufacturing method of the copper foil with a carrier of this invention performs heat processing for 1 hour-6 hours at the heating temperature of 100 to 220 degreeC in another one Embodiment.

  In still another embodiment of the method for producing a copper foil with a carrier of the present invention, in the heat treatment step, the heat treatment is performed at a heating temperature of 160 ° C. to 220 ° C. for 2 hours to 4 hours.

  In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, the heat treatment is performed in an inert gas atmosphere in the heat treatment step.

  In yet another embodiment of the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, the copper foil with a carrier is wound around a metal hollow tube.

  In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, the copper foil with a carrier is heated at a tension of 5 to 100 kgf / m when wound around a metal hollow tube. Process.

  In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, the copper foil with a carrier is heated at a tension of 20 to 100 kgf / m when wound around a metal hollow tube. Process.

  In still another embodiment of the method for producing a copper foil with a carrier of the present invention, in the heat treatment step, the hollow tube is 0.01 in a state where the copper foil with a carrier is wound around a metal hollow tube. Heat treatment is performed while rotating at a speed of ˜600 rotations / hour.

  In another embodiment of the method for producing a copper foil with a carrier according to the present invention, the tensile strength of the carrier measured at room temperature after the heat treatment step is 300 MPa or more.

  In another embodiment of the method for producing a copper foil with a carrier according to the present invention, the copper foil with a carrier before the heat treatment further includes an intermediate layer and an ultrathin copper layer in this order on the surface on the carrier side.

  In another embodiment of the method for producing a copper foil with a carrier according to the present invention, the copper foil with a carrier before the heat treatment further has a surface treatment layer on the surface on the carrier side.

  In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, the surface treatment layer includes a roughening treatment layer.

  In still another embodiment of the method for producing a copper foil with a carrier according to the present invention, the surface treatment layer is formed on the surface of the roughening treatment layer, and further from a heat resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer. Having one or more layers selected from the group consisting of

  In yet another embodiment of the method for producing a copper foil with a carrier of the present invention, the copper foil with a carrier before the heat treatment is a roughened layer, a heat-resistant layer as a surface treatment layer on the surface of the ultrathin copper layer. And one or more layers selected from the group consisting of a rust prevention layer, a chromate treatment layer and a silane coupling treatment layer.

  The manufacturing method of the copper foil with a carrier of this invention is another one Embodiment. WHEREIN: The copper foil with a carrier before the said heat processing equips the said surface treatment layer with a resin layer.

  In another aspect, the present invention is a method for producing a copper-clad laminate in which a copper-clad laminate is produced using the copper foil with a carrier produced by the method for producing a copper foil with a carrier of the present invention.

  In yet another aspect, the present invention is a method for manufacturing a printed wiring board, wherein a printed wiring board is manufactured using the copper foil with a carrier manufactured by the method for manufacturing a copper foil with a carrier of the present invention.

In yet another aspect of the present invention, a step of preparing a copper foil with a carrier and an insulating substrate prepared by the method for producing a copper foil with a carrier of the present invention,
A step of laminating the copper foil with carrier and an insulating substrate; and
After laminating the carrier-attached copper foil and the insulating substrate, forming a copper-clad laminate through a step of peeling the carrier of the carrier-attached copper foil,
Thereafter, the printed wiring board manufacturing method includes a step of forming a circuit by any one of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method.

In yet another aspect of the present invention, the step of forming a circuit on the ultrathin copper layer side surface or the carrier side surface of the carrier-attached copper foil produced by the method for producing a carrier-attached copper foil of the present invention,
Forming a resin layer on the ultrathin copper layer side surface or the carrier side surface of the copper foil with carrier so that the circuit is buried;
Forming a circuit on the resin layer;
After forming a circuit on the resin layer, peeling the carrier or the ultra-thin copper layer; and
After peeling off the carrier, the ultrathin copper layer or the carrier is removed to expose the circuit embedded in the resin layer formed on the ultrathin copper layer side surface or the carrier side surface. It is a manufacturing method of a printed wiring board including a process.

  In still another aspect, the present invention is an electronic device using a printed wiring board produced by the method for producing a copper foil with a carrier according to the present invention.

  In still another aspect, the present invention is a copper foil with a carrier produced by the method of the present invention.

  In another aspect of the present invention, a carrier-attached copper foil comprising a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer including a silane coupling treatment layer in this order, the carrier-attached copper foil on a horizontal plane With the surface treatment layer on the ultrathin copper foil side as the upper surface, 30 μL of an etching solution having a composition of 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the balance is water) is dropped into one place using a pipette. After leaving for 30 seconds, the etching solution is wiped off, and then the difference between the maximum diameter and the minimum diameter of the trace of the etching solution is 10 mm or less.

  In another aspect of the present invention, a carrier-attached copper foil comprising a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer including a silane coupling treatment layer in this order, the carrier-attached copper foil on a horizontal plane With the surface treatment layer on the ultrathin copper foil side as the upper surface, 30 μL of an etching solution having a composition of 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the balance is water) is dropped into one place using a pipette. The copper foil with a carrier has a maximum diameter of 25 mm or more after the etching solution is wiped off after being left for 30 seconds.

  In yet another embodiment, the carrier-attached copper foil of the present invention is a copper foil with a carrier provided with a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer including a silane coupling treatment layer in this order. A copper foil with a carrier is placed on top with the surface treatment layer on the ultrathin copper foil side as the top surface, and an etching solution having a composition of 24% by weight sulfuric acid and 15% by weight hydrogen peroxide (with the balance being water) is removed using a pipette. 30 μL was dropped on the spot, and after leaving for 30 seconds, the etching solution was wiped off. The maximum diameter of the trace of the etching solution was 25 mm or more.

  In yet another aspect of the present invention, a carrier-attached copper foil comprising a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer in this order, and the carrier-attached copper foil on the ultrathin copper foil side on a horizontal plane. With the surface treatment layer as the top surface, 30 μl of an etching solution having a composition of 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the balance is water) is dropped on one place using a pipette and left for 30 seconds. After wiping, the difference between the maximum diameter and the minimum diameter of the trace of the etching solution is 10 mm or less.

  In yet another aspect of the present invention, a carrier-attached copper foil comprising a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer in this order, and the carrier-attached copper foil on the ultrathin copper foil side on a horizontal plane. With the surface treatment layer as the top surface, 30 μl of an etching solution having a composition of 24% by weight of sulfuric acid and 15% by weight of hydrogen peroxide (the balance is water) is dropped on one place using a pipette and left for 30 seconds. After wiping off, the copper foil with a carrier whose maximum diameter of the trace of the etching solution is 25 mm or more.

  In yet another embodiment, the carrier-attached copper foil of the present invention is a carrier-attached copper foil comprising a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer in this order, and the carrier-attached copper foil is provided on a horizontal plane. The surface treatment layer on the ultrathin copper foil side is placed as the top surface, and 30 μl of an etching solution having a composition of 24 wt% sulfuric acid-15 wt% hydrogen peroxide (the balance is water) is dropped on one place using a pipette, After leaving for 30 seconds and wiping off the etching solution, the maximum diameter of the trace of the etching solution is 25 mm or more.

  In still another embodiment of the copper foil with a carrier of the present invention, the difference between the maximum diameter and the minimum diameter of the trace of the etching solution is 5 mm or less.

  In still another embodiment of the copper foil with a carrier of the present invention, the maximum diameter of the trace of the etching solution is 35 mm or more.

  ADVANTAGE OF THE INVENTION According to this invention, the manufacturing method of copper foil with a carrier with favorable circuit formation property with respect to an ultra-thin copper layer can be provided. Moreover, according to this invention, the copper foil with a carrier with favorable wettability of etching liquid can be provided.

AC is a schematic diagram of the wiring board cross section in the process to circuit plating and the resist removal based on the specific example of the manufacturing method of the printed wiring board using the copper foil with a carrier of this invention. DF is a schematic diagram of a cross section of a wiring board in a process from lamination of a resin and copper foil with a second layer carrier to laser drilling according to a specific example of a method for producing a printed wiring board using a copper foil with a carrier of the present invention. It is. GI is a schematic diagram of the wiring board cross section in the process from the via fill formation to the first layer carrier peeling according to a specific example of the method for manufacturing a printed wiring board using the carrier-attached copper foil of the present invention. J to K are schematic views of a cross section of a wiring board in steps from flash etching to bump / copper pillar formation according to a specific example of a method of manufacturing a printed wiring board using the carrier-attached copper foil of the present invention. It is the upper surface observation photograph of the circuit which shows the measuring method of the difference (micrometer) of the maximum value and minimum value of the circuit lower end width | variety seen from the circuit upper surface in an experiment example.

<Method for producing copper foil with carrier>
As a usage form of the carrier-attached copper foil provided with the carrier, the intermediate layer, and the ultrathin copper layer in this order, first, the surface of the ultrathin copper layer is bonded to an insulating substrate, and the carrier is peeled off after thermocompression bonding. Next, a resist having a predetermined pattern is provided on the ultrathin copper layer bonded to the insulating substrate. Subsequently, an etching process is performed with a predetermined etching solution, and an ultrathin copper layer not covered with the resist is removed to form a target conductor pattern. For example, a printed wiring board having a predetermined circuit Etc. are produced. Here, when the etching process is performed with a predetermined etching solution, if the wettability to the etching solution in the vicinity of the interface between the ultrathin copper layer and the resin base material is poor, the wetting and spreading of the etching solution becomes insufficient. In that case, an etching nonuniformity part arises in the interface vicinity part with a resin base material, and circuit linearity becomes bad.

In contrast, in one aspect of the method for producing a copper foil with a carrier of the present invention, a copper foil with a carrier provided with a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer including a silane coupling treatment layer in this order is prepared. Then, heat treatment is performed on the copper foil with a carrier at a heating temperature of 100 ° C. to 220 ° C. for 1 hour to 8 hours. In addition, the said 100 to 220 degreeC shows the atmospheric temperature in a heating apparatus. Thus, by performing the heat treatment at a heating temperature of 100 ° C. to 220 ° C. for 1 hour to 8 hours, an unreacted hydroxyl group in the silane coupling treatment layer undergoes a dehydration condensation reaction, so that the treatment layer becomes stronger. In addition to improving the adhesion to the resin base material, in the vicinity of the interface between the ultrathin copper layer and the surface treatment layer, and when the surface treatment layer has a plurality of layers, between the plurality of layers Since the atomic composition discontinuity near the interface has a continuous atomic composition distribution due to mutual diffusion, the wettability of the ultrathin copper layer near the interface with the etching base is good, and the resin base Etching becomes uniform in the vicinity of the interface, and the circuit linearity of the ultrathin copper layer is improved. Typically, the ultrathin copper layer is mainly composed of copper. Further, the surface treatment layer may have a roughening treatment layer and / or a heat-resistant layer and / or a rust prevention layer and / or a chromate treatment layer and a silane coupling treatment layer in this order, or may have any order. good. The roughening treatment layer is preferably composed mainly of an alloy, such as a copper alloy, a nickel alloy, or a cobalt alloy. The roughening treatment layer may be mainly composed of copper. The chromate treatment layer is preferably mainly composed of a metal oxide. The silane coupling treatment layer is preferably composed of an organosilicon compound.
Normally, when the copper foil with carrier and the resin base material are bonded together, thermocompression bonding is carried out at a temperature of 160 to 220 ° C. for about 50 to 120 minutes. There may be insufficient diffusion. Therefore, by performing the above heat treatment before adhesion to the resin base material, the effect of improving the etching property and the uniformity thereof is further ensured.
In addition, when Si is detected on the surface of the ultrathin copper layer of the carrier-added copper foil by surface analysis such as XPS, it can be determined that a silane coupling treatment layer is present.

  In the heat treatment, when the temperature is less than 100 ° C. or the heating time is less than 1 hour, mutual diffusion in the vicinity of each treatment interlayer interface becomes insufficient. In the heat treatment, when the temperature exceeds 220 ° C. or the heating time exceeds 8 hours, the peel strength between the carrier and the ultrathin copper foil changes, or the crystal grain growth of the ultrathin copper layer proceeds. Other problems may occur, such as reduced mechanical strength. In the heat treatment step, it is preferable to perform heat treatment at a heating temperature of 100 ° C. to 220 ° C. for 1 hour to 6 hours, preferably at a heating temperature of 120 ° C. to 220 ° C. for 1 to 6 hours, It is more preferable to perform heat treatment for 2 to 4 hours at a temperature of 160 ° C to 220 ° C.

According to another aspect of the method for producing a copper foil with a carrier of the present invention, the copper foil with a carrier provided with a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer in this order until the heating temperature is reached. It includes a heat treatment step in which heat treatment is performed at a heating temperature of 100 ° C. to 220 ° C. for 1 hour to 8 hours at a temperature rate exceeding 50 ° C./hour. Here, the temperature increase rate is the rate of temperature increase from the start of heating until the heating temperature is first reached. When the rate of temperature increase is 50 ° C./hour or less, the productivity of the heat treatment may be reduced, and the heat treatment time is long, and the surface of the copper foil with carrier may be oxidized. Moreover, it is preferable that a temperature increase rate is 200 degrees C / hour or less. When the rate of temperature rise exceeds 200 ° C./hour, when the carrier-attached copper foil is heated as a coil, the degree of elongation differs due to the difference in thermal expansion coefficient between the winding core and the carrier-attached copper foil. May occur. Moreover, when it exceeds 200 degreeC / hour, the wettability to the etching liquid of copper foil with a carrier may deteriorate. The cause of this is unknown, but due to the rapid expansion of the copper foil with a carrier, friction, misalignment, etc. occur between the surface treatment layer and the carrier that are in contact with each other when it is coiled, or to the surface treatment layer. Stress concentration occurs, and the friction, deviation, stress concentration, etc., lead to the occurrence of partial dislocations in the surface treatment layer, which affects the state of element diffusion in the surface treatment layer. There is a possibility.
The rate of temperature increase until reaching the heating temperature is more preferably 70 ° C / hour to 200 ° C / hour, even more preferably 100 ° C / hour to 200 ° C / hour, and 150 ° C / hour to 200 ° C / hour. Even more preferred.

  In the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, the heat treatment is performed in an atmosphere that does not contain a gas such as oxygen or water vapor that causes oxidation or deterioration of the carrier surface and the ultrathin copper layer surface. For example, heat treatment is preferably performed in an inert gas atmosphere of helium, neon, argon, nitrogen, or a mixed gas thereof.

  In the manufacturing method of the copper foil with a carrier of this invention, it is preferable to heat-process in the said heat processing process in the state which wound the copper foil with a carrier around metal hollow tubes. By heat-treating the copper foil with carrier wrapped around a metal hollow tube, it can be heated from the inside with respect to the copper foil with carrier by venting into a metal tube with good heat conduction, An efficient heat treatment becomes possible. The metal hollow tube is not particularly limited, but is preferably made of, for example, carbon steel or stainless steel, and the size is 7 cm to 20 cm in outer diameter and 0.5 cm to 3.0 cm in thickness. Can do.

In the method for producing a copper foil with a carrier according to the present invention, in the heat treatment step, it is preferable to perform the heat treatment at a tension of 5 to 100 kgf / m when winding the copper foil with a carrier around a metal hollow tube. . The tension is a tension per unit width (width 1 m) of the carrier-attached copper foil. By setting the tension to 5 kgf / m or more, it is possible to suppress the entrainment of oxygen and prevent the copper foil with carrier from being oxidized. Moreover, the wrinkle which generate | occur | produces at the time of winding can be prevented because the said tension | tensile_strength shall be 100 kgf / m or less.
The tension is more preferably 10 kgf / m or more, more preferably 20 kgf / m or more, more preferably 20 to 100 kgf / m, still more preferably 20 to 50 kgf / m, still more preferably 20 to 30 kgf. / M.

  In the method for producing a copper foil with a carrier of the present invention, in the heat treatment step, the hollow tube is wound at a rate of 0.01 to 600 revolutions / hour in a state where the copper foil with a carrier is wound around a metal hollow tube. It is preferable to perform the heat treatment while rotating at a speed. By performing the heat treatment while rotating the hollow tube at a relatively low speed of not less than 0.01 rotations / hour and not more than 600 rotations / hour, oxygen trapped between the wound copper foils is released. The oxidation of the copper foil with a carrier during the heat treatment can be prevented. The rotation speed of the hollow tube is more preferably 0.01 to 180 rotations / hour, more preferably 0.01 to 120 rotations / hour, more preferably 0.01 to 70 rotations / hour. More preferably, it is 1 to 70 rotations / hour.

In the manufacturing method of the copper foil with a carrier of this invention, it is preferable that the tensile strength of the carrier measured at normal temperature after the said heat processing process is 300 Mpa or more. Thus, the rigidity when functioning as a carrier of ultra-thin copper foil is fully maintained because the tensile strength of the carrier measured at room temperature after the heat treatment step is 300 MPa or more.
The tensile strength of the carrier is more preferably 350 MPa or more, still more preferably 380 MPa or more, more typically 350 to 500 MPa, and still more typically 380 to 450 MPa.

<Copper foil with carrier>
Hereinafter, unless otherwise specified, the embodiment of the copper foil with carrier will be described before the heat treatment according to the present invention, but the embodiment is the one after the heat treatment (production of the copper foil with carrier according to the present invention). The same applies to the copper foil with carrier produced by the method.
The copper foil with a carrier of the present invention has a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer in this order. The method of using the copper foil with carrier itself is well known to those skilled in the art. For example, the surface of the ultra-thin copper layer is made of paper base phenol resin, paper base epoxy resin, synthetic fiber cloth base epoxy resin, glass cloth / paper composite. Substrate epoxy resin, glass cloth / glass nonwoven fabric composite substrate epoxy resin and glass cloth substrate epoxy resin, polyester film, polyimide film, liquid crystal polymer film, fluororesin film, etc. Then, an ultrathin copper layer bonded to an insulating substrate is etched into a target conductor pattern, and finally a printed wiring board can be manufactured.

<Career>
Carriers that can be used in the present invention are typically metal foils or resin films, such as copper foil, copper alloy foil, nickel foil, nickel alloy foil, iron foil, iron alloy foil, stainless steel foil, aluminum foil, aluminum. It is provided in the form of alloy foil, insulating resin film, polyimide film, and LCP film.
Carriers that can be used in the present invention are typically provided in the form of rolled copper foil or electrolytic copper foil. In general, the electrolytic copper foil is produced by electrolytic deposition of copper from a copper sulfate plating bath onto a titanium or stainless steel drum, and the rolled copper foil is produced by repeating plastic working and heat treatment with a rolling roll. Examples of copper foil materials include high-purity copper such as tough pitch copper (JIS H3100 alloy number C1100) and oxygen-free copper (JIS H3100 alloy number C1020 or JIS H3510 alloy number C1011), for example, Sn-containing copper, Ag-containing copper, Cr A copper alloy such as a copper alloy added with Zr or Mg, or a Corson copper alloy added with Ni, Si or the like can also be used.
Moreover, as electrolytic copper foil, it can produce with the following electrolyte solution composition and manufacturing conditions.
In addition, the remainder of the process liquid used for manufacture of the copper foil described in this specification, surface treatment of copper foil, plating of copper foil, etc. is water unless otherwise specified.
<Electrolytic solution composition>
Copper: 90-110 g / L
Sulfuric acid: 90-110 g / L
Chlorine: 50-100ppm
Leveling agent 1 (bis (3sulfopropyl) disulfide): 10 to 30 ppm
Leveling agent 2 (amine compound): 10 to 30 ppm
As the amine compound, an amine compound having the following chemical formula can be used.

(In the above chemical formula, R ₁ and R ₂ are selected from the group consisting of a hydroxyalkyl group, an ether group, an aryl group, an aromatic substituted alkyl group, an unsaturated hydrocarbon group, and an alkyl group.)

<Production conditions>
Current density: 70 to 100 A / dm ²
Electrolyte temperature: 50-60 ° C
Electrolyte linear velocity: 3-5 m / sec
Electrolysis time: 0.5 to 10 minutes In addition, when the term “copper foil” is used alone in this specification, a copper alloy foil is also included.

  The thickness of the carrier that can be used in the present invention is not particularly limited, but may be appropriately adjusted to a thickness suitable for serving as a carrier, and may be, for example, 5 μm or more. However, if it is too thick, the production cost becomes high, so generally it is preferably 35 μm or less. Accordingly, the thickness of the carrier is typically 8 to 70 μm, more typically 12 to 70 μm, and more typically 18 to 35 μm. Moreover, it is preferable that the thickness of a carrier is small from a viewpoint of reducing raw material cost. Therefore, the thickness of the carrier is typically 5 μm or more and 35 μm or less, preferably 5 μm or more and 18 μm or less, preferably 5 μm or more and 12 μm or less, preferably 5 μm or more and 11 μm or less, preferably 5 μm or more and 10 μm or less. It is as follows. In addition, when the thickness of a carrier is small, it is easy to generate | occur | produce a wrinkle in the case of a carrier foil. In order to prevent the generation of folding wrinkles, for example, it is effective to smooth the transport roll of the copper foil manufacturing apparatus with a carrier and to shorten the distance between the transport roll and the next transport roll. In addition, when the copper foil with a carrier is used for the embedding method (embedded process) which is one of the manufacturing methods of a printed wiring board, the rigidity of a carrier needs to be high. Therefore, when used in the embedding method, the thickness of the carrier is preferably 18 μm or more and 300 μm or less, preferably 25 μm or more and 150 μm or less, preferably 35 μm or more and 100 μm or less, and 35 μm or more and 70 μm or less. Even more preferred.

<Intermediate layer>
An intermediate layer is provided on the carrier. Another layer may be provided between the carrier and the intermediate layer. In the intermediate layer used in the present invention, the ultrathin copper layer is hardly peeled off from the carrier before the copper foil with the carrier is laminated on the insulating substrate, while the ultrathin copper layer is separated from the carrier after the lamination step on the insulating substrate. There is no particular limitation as long as it can be peeled off. For example, the intermediate layer of the copper foil with a carrier of the present invention is Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, alloys thereof, hydrates thereof, oxides thereof, One or two or more selected from the group consisting of organic substances may be included. The intermediate layer may be a plurality of layers. The intermediate layer may be provided on both sides of the carrier.

  Further, for example, the intermediate layer is a single metal layer composed of one kind of element selected from the element group composed of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn from the carrier side. Or forming an alloy layer composed of one or more elements selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, A single metal layer made of one element selected from the group consisting of Cr, Ni, Co, Fe, Mo, Ti, W, P, Cu, Al, Zn, or Cr, Ni, Co Fe, Mo, Ti, W, P, Cu, Al, an alloy layer made of one or more elements selected from the group consisting of elements, or Cr, Ni, Co, Fe, Mo, Select from element group composed of Ti, W, P, Cu, Al, Zn It can be constructed by forming the a one or two or more layers of hydrate or oxide, or organic elements.

  An intermediate layer containing Ni can be provided on one or both sides of the carrier. The intermediate layer is formed by laminating any one layer of nickel or an alloy containing nickel on the carrier and a layer containing any one or more of chromium, a chromium alloy, and an oxide of chromium in this order. It is preferable. In addition, it is preferable that zinc is contained in any one layer of nickel or an alloy containing nickel and / or a layer containing any one or more of chromium, a chromium alloy, and an oxide of chromium. Here, the alloy containing nickel is composed of nickel and one or more elements selected from the group consisting of cobalt, iron, chromium, molybdenum, zinc, tantalum, copper, aluminum, phosphorus, tungsten, tin, arsenic, and titanium. An alloy. The alloy containing nickel may be an alloy composed of three or more elements. The chromium alloy is an alloy composed of chromium and one or more elements selected from the group consisting of cobalt, iron, nickel, molybdenum, zinc, tantalum, copper, aluminum, phosphorus, tungsten, tin, arsenic, and titanium. Say. The chromium alloy may be an alloy composed of three or more elements. Further, the layer containing any one or more of chromium, a chromium alloy, and a chromium oxide may be a chromate treatment layer. Here, the chromate-treated layer refers to a layer treated with a liquid containing chromic anhydride, chromic acid, dichromic acid, chromate or dichromate. Chromate treatment layer is any element such as cobalt, iron, nickel, molybdenum, zinc, tantalum, copper, aluminum, phosphorus, tungsten, tin, arsenic and titanium (metal, alloy, oxide, nitride, sulfide, etc.) May be included). Specific examples of the chromate treatment layer include a pure chromate treatment layer and a zinc chromate treatment layer. In the present invention, a chromate treatment layer treated with an anhydrous chromic acid or potassium dichromate aqueous solution is referred to as a pure chromate treatment layer. In the present invention, a chromate treatment layer treated with a treatment liquid containing chromic anhydride or potassium dichromate and zinc is referred to as a zinc chromate treatment layer.

The intermediate layer is any one of nickel, nickel-zinc alloy, nickel-phosphorus alloy and nickel-cobalt alloy on the carrier, and any of zinc chromate treatment layer, pure chromate treatment layer and chromium plating layer. It is preferable that one kind of layer is laminated in this order, and the intermediate layer is constituted by laminating a nickel layer or a nickel-zinc alloy layer and a zinc chromate treatment layer in this order on the carrier. More preferably, the nickel-zinc alloy layer and the pure chromate treatment layer or the zinc chromate treatment layer are laminated in this order. Since the adhesive force between nickel and copper is higher than the adhesive force between chromium and copper, when the ultrathin copper layer is peeled off, it peels at the interface between the ultrathin copper layer and the chromate treatment layer. Further, the nickel of the intermediate layer is expected to have a barrier effect that prevents the copper component from diffusing from the carrier into the ultrathin copper layer. Further, it is preferable to form a chromate treatment layer on the intermediate layer instead of chrome plating. Since chromium plating forms a dense chromium oxide layer on the surface, when an ultrathin copper foil is formed by electroplating, the electrical resistance increases and pinholes are likely to occur. The surface on which the chromate treatment layer is formed has a chromium oxide layer that is less dense than chrome plating, so resistance to formation of ultrathin copper foil by electroplating is less likely to reduce pinholes. it can. Here, by forming a zinc chromate treatment layer as a chromate treatment layer, the resistance when forming an ultrathin copper foil by electroplating is lower than that of a normal chromate treatment layer, and the generation of pinholes is further suppressed. be able to.
When using electrolytic copper foil as a carrier, it is preferable to provide an intermediate layer on the shiny surface from the viewpoint of reducing pinholes.

  Among the intermediate layers, the chromate treatment layer is thinly present at the interface of the ultrathin copper layer, while the ultrathin copper layer does not peel off from the carrier before the laminating process on the insulating substrate, while after the laminating process on the insulating substrate It is preferable for obtaining the property that the ultrathin copper layer can be peeled from the carrier. When the chromate treatment layer is present at the boundary between the carrier and the ultrathin copper layer without providing a nickel layer or an alloy layer containing nickel (for example, a nickel-zinc alloy layer), the peelability is hardly improved, and the chromate treatment layer If the nickel layer or the alloy layer containing nickel (for example, nickel-zinc alloy layer) and the ultrathin copper layer are directly laminated, the nickel amount in the nickel layer or the alloy layer containing nickel (for example, nickel-zinc alloy layer) Accordingly, the peel strength is too strong or too weak to obtain an appropriate peel strength.

  Further, if the chromate treatment layer is present at the boundary between the carrier and the nickel layer or nickel-containing alloy layer (for example, nickel-zinc alloy layer), the intermediate layer is also peeled along with the peeling of the ultrathin copper layer, that is, the carrier. And the intermediate layer is undesirably peeled off. Such a situation may occur not only when the chromate treatment layer is provided at the interface with the carrier, but also when the amount of chromium is excessive even if the chromate treatment layer is provided at the interface with the ultrathin copper layer. This is because copper and nickel are likely to be in solid solution, so if they are in contact with each other, the adhesive force increases due to mutual diffusion and is difficult to peel off, while chromium and copper are less likely to dissolve and cause mutual diffusion. It is considered that the adhesion between the chromium and copper interface is weak and easy to peel off. Further, when the nickel amount in the intermediate layer is insufficient, there is only a very small amount of chromium between the carrier and the ultrathin copper layer, so that they are in close contact with each other and are difficult to peel off.

The intermediate nickel layer or nickel-containing alloy layer (for example, nickel-zinc alloy layer) is formed by wet plating such as electroplating, electroless plating and immersion plating, or dry plating such as sputtering, CVD and PDV. can do. Electroplating is preferable from the viewpoint of cost. When the carrier is a resin film, the intermediate layer can be formed by dry plating such as CVD and PDV or wet plating such as electroless plating and immersion plating.
In addition, the chromate treatment layer can be formed with, for example, electrolytic chromate or immersion chromate, but the chromium concentration can be increased, and the peel strength of the ultra-thin copper layer from the carrier is improved. Preferably formed.

  Even if the intermediate | middle layer of the copper foil with a carrier of this invention is laminated | stacked in order of the organic layer containing either a nickel layer and a nitrogen containing organic compound, a sulfur containing organic compound, and carboxylic acid on a carrier. Good. Moreover, the intermediate layer of the copper foil with a carrier of the present invention is formed by laminating an organic material layer containing any of a nitrogen-containing organic compound, a sulfur-containing organic compound and a carboxylic acid, and a nickel layer on the carrier. May be. Moreover, BTA (benzotriazole), MBT (mercaptobenzothiazole), etc. are mentioned as an organic substance containing either the said nitrogen containing organic compound, sulfur containing organic compound, and carboxylic acid.

Moreover, as an organic substance which an intermediate | middle layer contains, it is preferable to use what consists of 1 type (s) or 2 or more types selected from a nitrogen containing organic compound, a sulfur containing organic compound, and carboxylic acid. Among the nitrogen-containing organic compound, the sulfur-containing organic compound, and the carboxylic acid, the nitrogen-containing organic compound includes a nitrogen-containing organic compound having a substituent. Specific nitrogen-containing organic compounds include 1,2,3-benzotriazole, carboxybenzotriazole, N ′, N′-bis (benzotriazolylmethyl) urea, 1H-1 which are triazole compounds having a substituent. 2,4-triazole, 3-amino-1H-1,2,4-triazole and the like are preferably used.
For the sulfur-containing organic compound, it is preferable to use mercaptobenzothiazole, 2-mercaptobenzothiazole sodium, thiocyanuric acid, 2-benzimidazolethiol, and the like.
As the carboxylic acid, it is particularly preferable to use a monocarboxylic acid, and it is particularly preferable to use oleic acid, linoleic acid, linolenic acid, or the like.
The organic material is preferably contained in a thickness of 25 nm to 80 nm, more preferably 30 nm to 70 nm. The intermediate layer may contain a plurality of types (one or more) of the aforementioned organic substances.
In addition, the thickness of organic substance can be measured as follows.

<Thickness of organic material in the intermediate layer>
After peeling off the ultrathin copper layer of the carrier-attached copper foil from the carrier, the surface of the exposed ultrathin copper layer on the intermediate layer side and the exposed surface of the intermediate layer side of the carrier are subjected to XPS measurement to create a depth profile. The depth at which the carbon concentration first becomes 3 at% or less from the surface on the intermediate layer side of the ultrathin copper layer is defined as A (nm), and the carbon concentration is initially 3 at% or less from the surface on the intermediate layer side of the carrier. The resulting depth can be defined as B (nm), and the sum of A and B can be defined as the thickness (nm) of the organic substance in the intermediate layer.
XPS operating conditions are shown below.
・ Device: XPS measuring device (ULVAC-PHI, Model 5600MC)
・ Achieving vacuum: 3.8 × 10 ⁻⁷ Pa
X-ray: Monochromatic AlKα or non-monochromatic MgKα, X-ray output 300 W, detection area 800 μmφ, angle between sample and detector 45 °
Ion beam: ion species Ar ⁺ , acceleration voltage 3 kV, sweep area 3 mm × 3 mm, sputtering rate 2.8 nm / min (in terms of SiO ₂ )

  The method for using the organic substance contained in the intermediate layer will be described below with reference to the method for forming the intermediate layer on the carrier foil. The intermediate layer is formed on the carrier by dissolving the above-mentioned organic substance in a solvent and immersing the carrier in the solvent, or showering, spraying method, dropping method and electrodeposition method on the surface on which the intermediate layer is to be formed. Etc., and there is no need to adopt a particularly limited method. At this time, the concentration of the organic agent in the solvent is preferably in the range of a concentration of 0.01 g / L to 30 g / L and a liquid temperature of 20 to 60 ° C. in all the organic substances described above. The concentration of the organic substance is not particularly limited, and there is no problem even if the concentration is originally high or low. In addition, the organic substance thickness of an intermediate | middle layer tends to become large, so that the density | concentration of organic substance is high, and the contact time of the carrier to the solvent which dissolved the organic substance mentioned above is long. And when the organic substance thickness of an intermediate | middle layer is thick, it exists in the tendency for the effect of organic substance to suppress the spreading | diffusion to the ultra-thin copper layer side of Ni to become large.

<Ultrathin copper layer>
An ultrathin copper layer is provided on the intermediate layer. Another layer may be provided between the intermediate layer and the ultrathin copper layer. The ultra-thin copper layer can be formed by electroplating using an electrolytic bath such as copper sulfate, copper pyrophosphate, copper sulfamate, copper cyanide, etc., and the copper layer can be formed at a high current density. A copper sulfate bath is preferred. The thickness of the ultrathin copper layer is not particularly limited, but is generally thinner than the carrier, for example, 12 μm or less. It is typically 0.5-12 μm, more typically 1-5 μm, even more typically 1.5-5 μm, and even more typically 2-5 μm. The ultra thin copper layer may be provided on both sides of the carrier.

<Roughening treatment and other surface treatment>
A roughening treatment layer may be provided on the surface of the ultrathin copper layer by performing a roughening treatment, for example, in order to improve the adhesion to the insulating substrate. The roughening treatment can be performed, for example, by forming roughened particles with copper or a copper alloy. The roughening process may be fine. The roughening treatment layer is a layer made of any single substance selected from the group consisting of copper, nickel, cobalt, phosphorus, tungsten, arsenic, molybdenum, chromium, and zinc, or an alloy containing one or more of them. Also good. Moreover, after forming the roughened particles with copper or a copper alloy, a roughening treatment can be performed in which secondary particles or tertiary particles are further formed of nickel, cobalt, copper, zinc alone or an alloy. Thereafter, a heat-resistant layer or a rust-preventing layer may be formed of nickel, cobalt, copper, zinc alone or an alloy, and the surface thereof may be further subjected to a treatment such as a chromate treatment or a silane coupling treatment. Alternatively, a heat-resistant layer or a rust-preventing layer may be formed from nickel, cobalt, copper, zinc alone or an alloy without roughening, and the surface may be subjected to a treatment such as chromate treatment or silane coupling treatment. Good. That is, one or more layers selected from the group consisting of a heat-resistant layer, a rust-preventing layer, a chromate treatment layer, and a silane coupling treatment layer may be formed on the surface of the roughening treatment layer. One or more layers selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer may be formed on the surface. In addition, the above-mentioned heat-resistant layer, rust prevention layer, chromate treatment layer, and silane coupling treatment layer may each be formed of a plurality of layers (for example, 2 layers or more, 3 layers or more, etc.). Here, the chromate-treated layer may be the above-mentioned chromate-treated layer or other chromate-treated layer.
In addition, the said silane coupling process layer reaches | attains heating temperature with respect to the copper foil with a carrier provided with the carrier which concerns on another one side surface of the said invention, an intermediate | middle layer, an ultra-thin copper layer, and a surface treatment layer in this order. In the manufacturing method of the copper foil with a carrier including the heat treatment step of performing the heat treatment at a heating temperature of 100 ° C. to 220 ° C. for 1 hour to 8 hours at a heating rate of more than 50 ° C./hour, it is essential as described above. Is a component of

As the heat-resistant layer and the rust-proof layer, known heat-resistant layers and rust-proof layers can be used. For example, the heat-resistant layer and / or the anticorrosive layer is a group of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron, tantalum A layer containing one or more elements selected from nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements Further, it may be a metal layer or an alloy layer made of one or more elements selected from the group consisting of iron, tantalum and the like. The heat-resistant layer and / or rust preventive layer is a group of nickel, zinc, tin, cobalt, molybdenum, copper, tungsten, phosphorus, arsenic, chromium, vanadium, titanium, aluminum, gold, silver, platinum group elements, iron, and tantalum. An oxide, nitride, or silicide containing one or more elements selected from the above may be included. Further, the heat-resistant layer and / or the rust preventive layer may be a layer containing a nickel-zinc alloy. Further, the heat-resistant layer and / or the rust preventive layer may be a nickel-zinc alloy layer. The nickel-zinc alloy layer may contain 50 wt% to 99 wt% nickel and 50 wt% to 1 wt% zinc, excluding inevitable impurities. The total adhesion amount of zinc and nickel in the nickel-zinc alloy layer may be 5 to 1000 mg / m ² , preferably 10 to 500 mg / m ² , preferably 20 to 100 mg / m ² . Further, the ratio of the nickel adhesion amount and the zinc adhesion amount of the layer containing the nickel-zinc alloy or the nickel-zinc alloy layer (= nickel adhesion amount / zinc adhesion amount) is 1.5 to 10. It is preferable. Further, the nickel - in adhesion amount of nickel in the zinc alloy layer is preferably from ^{0.5mg / m 2 ~500mg / m 2} , 1mg / m 2 ~50mg / m 2 - zinc alloy layer or the nickel containing More preferably. When the heat-resistant layer and / or rust prevention layer is a layer containing a nickel-zinc alloy, the interface between the copper foil and the resin substrate is eroded by the desmear liquid when the inner wall such as a through hole or via hole comes into contact with the desmear liquid. It is difficult to improve the adhesion between the copper foil and the resin substrate.

For example heat-resistant layer and / or anticorrosive layer has coating weight of 1 mg / m ² -100 mg / m ^2, preferably from 5 mg / m ² and to 50 mg / m ² of nickel or nickel alloy layer, the adhesion amount is 1 mg / m ² to 80 mg / m ^2, preferably it may be obtained by sequentially laminating a tin layer of ^{5mg / m 2 ~40mg / m 2} , wherein the nickel alloy layer of nickel - molybdenum, nickel - zinc, nickel - molybdenum - cobalt You may be comprised by any one of these. The heat-resistant layer and / or anticorrosive layer, it is ^{preferably, 10mg / m 2 ~70mg / m} 2 total deposition amount of nickel or nickel alloy and tin is 2mg / m ² ~150mg / m 2 It is more preferable. Further, the heat-resistant layer and / or the rust preventive layer is preferably [nickel or nickel adhesion amount in nickel or nickel alloy] / [tin adhesion amount] = 0.25 to 10, preferably 0.33 to 3. More preferred. When the heat-resistant layer and / or rust-preventing layer is used, the carrier-clad copper foil is processed into a printed wiring board, and the subsequent circuit peeling strength, the chemical resistance deterioration rate of the peeling strength, and the like are improved.

  In addition, you may use a well-known silane coupling agent for the silane coupling agent used for a silane coupling process, for example, using an amino-type silane coupling agent or an epoxy-type silane coupling agent, a mercapto-type silane coupling agent. Good. Silane coupling agents include vinyltrimethoxysilane, vinylphenyltrimethoxylane, γ-methacryloxypropyltrimethoxysilane, γ-glycidoxypropyltrimethoxysilane, 4-glycidylbutyltrimethoxysilane, and γ-aminopropyl. Triethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-3- (4- (3-aminopropoxy) ptoxy) propyl-3-aminopropyltrimethoxysilane, imidazolesilane, triazinesilane, γ-mercaptopropyltrimethoxysilane or the like may be used.

  The silane coupling treatment layer may be formed using a silane coupling agent such as an epoxy silane, an amino silane, a methacryloxy silane, or a mercapto silane. In addition, you may use 2 or more types of such silane coupling agents in mixture. Especially, it is preferable to form using an amino-type silane coupling agent or an epoxy-type silane coupling agent.

  The amino silane coupling agent referred to here is N- (2-aminoethyl) -3-aminopropyltrimethoxysilane, 3- (N-styrylmethyl-2-aminoethylamino) propyltrimethoxysilane, 3- Aminopropyltriethoxysilane, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, aminopropyltrimethoxysilane, N-methylaminopropyltrimethoxysilane, N-phenylaminopropyltrimethoxysilane, N- (3 -Acryloxy-2-hydroxypropyl) -3-aminopropyltriethoxysilane, 4-aminobutyltriethoxysilane, (aminoethylaminomethyl) phenethyltrimethoxysilane, N- (2-aminoethyl-3-aminopropyl) Trimethoxysilane, N (2-Aminoethyl-3-aminopropyl) tris (2-ethylhexoxy) silane, 6- (aminohexylaminopropyl) trimethoxysilane, aminophenyltrimethoxysilane, 3- (1-aminopropoxy) -3,3- Dimethyl-1-propenyltrimethoxysilane, 3-aminopropyltris (methoxyethoxyethoxy) silane, 3-aminopropyltriethoxysilane, 3-aminopropyltrimethoxysilane, ω-aminoundecyltrimethoxysilane, 3- (2 -N-benzylaminoethylaminopropyl) trimethoxysilane, bis (2-hydroxyethyl) -3-aminopropyltriethoxysilane, (N, N-diethyl-3-aminopropyl) trimethoxysilane, (N, N- Dimethyl-3-aminopropyl) Limethoxysilane, N-methylaminopropyltrimethoxysilane, N-phenylaminopropyltrimethoxysilane, 3- (N-styrylmethyl-2-aminoethylamino) propyltrimethoxysilane, γ-aminopropyltriethoxysilane, N -Β (aminoethyl) γ-aminopropyltrimethoxysilane, N-3- (4- (3-aminopropoxy) ptoxy) propyl-3-aminopropyltrimethoxysilane Good.

The silane coupling treatment layer is 0.05 mg / m ^{2 to} 200 mg / m ² , preferably 0.15 mg / m ^{2 to} 20 mg / m ² , preferably 0.3 mg / m ^{2 to} 2.0 mg in terms of silicon atoms. / M ² is desirable. In the case of the above-mentioned range, the adhesiveness between the base resin and the surface-treated copper foil can be further improved.

In addition, on the surface of an ultrathin copper layer, a roughening treatment layer, a heat-resistant layer, a rust prevention layer, a silane coupling treatment layer or a chromate treatment layer, International Publication No. WO2008 / 053878, JP2008-1111169, Patent No. 5024930 , International Publication No. WO2006 / 028207, Patent No. 4828427, International Publication No. WO2006 / 134868, Patent No. 5046927, International Publication No. WO2007 / 105635, Patent No. 5180815, JP2013-19056A. be able to.
One or more selected from the group consisting of a roughening treatment layer, a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer on one surface or both surfaces of the ultrathin copper layer. A layer may be provided or a surface treatment layer may be provided. The surface treatment layer may be one or more layers selected from the group consisting of a roughening treatment layer, a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer.

The carrier-attached copper foil may include one or more layers selected from the group consisting of a heat-resistant layer, a rust-proof layer, a chromate-treated layer, and a silane coupling-treated layer on the roughening-treated layer.
Further, a heat-resistant layer and a rust-proof layer may be provided on the roughening-treated layer, a chromate-treated layer may be provided on the heat-resistant layer and the rust-proof layer, and a silane coupling treatment is provided on the chromate-treated layer. A layer may be provided.
The carrier-attached copper foil includes a resin layer on the ultrathin copper layer, the roughened layer, the heat-resistant layer, the rust-proof layer, the chromate-treated layer, or the silane coupling-treated layer. May be. The resin layer may be an insulating resin layer.
Moreover, the copper foil with a carrier may be provided with a roughening treatment layer on the carrier, and is selected from the group consisting of a roughening treatment layer, a heat-resistant layer, a rust prevention layer, a chromate treatment layer and a silane coupling treatment layer on the carrier. One or more layers may be provided. The roughening treatment layer, the heat-resistant layer, the rust prevention layer, the chromate treatment layer and the silane coupling treatment layer may be provided by using known methods, and according to the methods described in the present specification, claims and drawings. It may be provided. Providing one or more layers selected from the roughening treatment layer, heat-resistant layer, rust prevention layer, chromate treatment layer, and silane coupling treatment layer on the carrier is possible from the surface side having the roughening treatment layer, etc. When the substrate is laminated on a support such as a resin substrate, the carrier and the support are less likely to be peeled off.

  The resin layer may be an adhesive, or an insulating resin layer in a semi-cured state (B stage state) for bonding. The semi-cured state (B stage state) is a state in which there is no sticky feeling even if the surface is touched with a finger, the insulating resin layer can be stacked and stored, and a curing reaction occurs when subjected to heat treatment. Including that.

  The resin layer may contain a thermosetting resin or may be a thermoplastic resin. The resin layer may include a thermoplastic resin. The resin layer may contain a known resin, resin curing agent, compound, curing accelerator, dielectric, reaction catalyst, crosslinking agent, polymer, prepreg, skeleton material, and the like. The resin layer may be, for example, International Publication No. WO2008 / 004399, International Publication No. WO2008 / 053878, International Publication No. WO2009 / 084533, JP-A-11-5828, JP-A-11-140281, Patent 3184485, International Publication. No. WO 97/02728, Japanese Patent No. 3676375, Japanese Patent Laid-Open No. 2000-43188, Japanese Patent No. 3612594, Japanese Patent Laid-Open No. 2002-179722, Japanese Patent Laid-Open No. 2002-359444, Japanese Patent Laid-Open No. 2003-302068, Japanese Patent No. 3992225, Japanese Patent Laid-Open No. 2003 No. 249739, Japanese Patent No. 4136509, Japanese Patent Application Laid-Open No. 2004-82687, Japanese Patent No. 4025177, Japanese Patent Application Laid-Open No. 2004-349654, Japanese Patent No. 4286060, Japanese Patent Application Laid-Open No. 2005-262506, Japanese Patent No. 4570070, Japanese Patent Application Laid-Open No. No. 5-53218, Japanese Patent No. 3949676, Japanese Patent No. 4178415, International Publication No. WO2004 / 005588, Japanese Patent Application Laid-Open No. 2006-257153, Japanese Patent Application Laid-Open No. 2007-326923, Japanese Patent Application Laid-Open No. 2008-11169, and Japanese Patent No. 5024930. No. WO 2006/028207, Japanese Patent No. 4828427, JP 2009-67029, International Publication No. WO 2006/134868, Japanese Patent No. 5046927, JP 2009-173017, International Publication No. WO 2007/105635, Patent No. 5180815, International Publication Number WO2008 / 114858, International Publication Number WO2009 / 008471, Japanese Patent Application Laid-Open No. 2011-14727, International Publication Number WO2009 / 001850, International Publication Number WO2009 / 145179, International Publication Number Nos. WO2011 / 068157, JP-A-2013-19056 (resins, resin curing agents, compounds, curing accelerators, dielectrics, reaction catalysts, crosslinking agents, polymers, prepregs, skeletal materials, etc.) and / or You may form using the formation method and formation apparatus of a resin layer.

  The type of the resin layer is not particularly limited. For example, epoxy resin, polyimide resin, polyfunctional cyanate ester compound, maleimide compound, polymaleimide compound, maleimide resin, aromatic maleimide resin , Polyvinyl acetal resin, urethane resin, polyethersulfone (also referred to as polyethersulfone or polyethersulfone), polyethersulfone (also referred to as polyethersulfone or polyethersulfone) resin, aromatic polyamide resin, aromatic Polyamide resin polymer, rubber resin, polyamine, aromatic polyamine, polyamideimide resin, rubber modified epoxy resin, phenoxy resin, carboxyl group-modified acrylonitrile-butadiene resin, polyphenylene oxide, bismaleimide triazine tree Fat, thermosetting polyphenylene oxide resin, cyanate ester resin, carboxylic acid anhydride, polyvalent carboxylic acid anhydride, linear polymer having crosslinkable functional group, polyphenylene ether resin, 2,2-bis (4 -Cyanatophenyl) propane, phosphorus-containing phenol compound, manganese naphthenate, 2,2-bis (4-glycidylphenyl) propane, polyphenylene ether-cyanate resin, siloxane-modified polyamideimide resin, cyanoester resin, phosphazene resin, Select from the group of rubber-modified polyamide-imide resin, isoprene, hydrogenated polybutadiene, polyvinyl butyral, phenoxy, polymer epoxy, aromatic polyamide, fluororesin, bisphenol, block copolymerized polyimide resin, and cyanoester resin It can be mentioned resins containing one or more kinds as suitable to be.

The epoxy resin has two or more epoxy groups in the molecule and can be used without any problem as long as it can be used for electric / electronic materials. The epoxy resin is preferably an epoxy resin epoxidized using a compound having two or more glycidyl groups in the molecule. Also, bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, bisphenol AD type epoxy resin, novolac type epoxy resin, cresol novolac type epoxy resin, alicyclic epoxy resin, brominated (brominated) epoxy Resin, phenol novolac type epoxy resin, naphthalene type epoxy resin, brominated bisphenol A type epoxy resin, orthocresol novolac type epoxy resin, rubber modified bisphenol A type epoxy resin, glycidylamine type epoxy resin, triglycidyl isocyanurate, N, N -Glycidyl amine compounds such as diglycidyl aniline, glycidyl ester compounds such as diglycidyl tetrahydrophthalate, phosphorus-containing epoxy resins, biphenyl type epoxy resins, One or two or more types selected from the group of phenyl novolac type epoxy resin, trishydroxyphenylmethane type epoxy resin, tetraphenylethane type epoxy resin can be used, or a hydrogenated product of the epoxy resin or Halogenated substances can be used.
As the phosphorus-containing epoxy resin, a known epoxy resin containing phosphorus can be used. The phosphorus-containing epoxy resin is, for example, an epoxy resin obtained as a derivative from 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide having two or more epoxy groups in the molecule. Is preferred.

(When the resin layer contains a dielectric (dielectric filler))
The resin layer may include a dielectric (dielectric filler).
In the case where a dielectric (dielectric filler) is included in any of the above resin layers or resin compositions, it can be used for the purpose of forming the capacitor layer and increase the capacitance of the capacitor circuit. Examples of the dielectric (dielectric filler) include BaTiO ₃ , SrTiO ₃ , Pb (Zr—Ti) O ₃ (common name PZT), PbLaTiO ₃ · PbLaZrO (common name PLZT), SrBi ₂ Ta ₂ O ₉ (common name SBT), and the like. A composite oxide dielectric powder having a perovskite structure is used.

  The dielectric (dielectric filler) may be powdery. When the dielectric (dielectric filler) is in powder form, the powder characteristics of the dielectric (dielectric filler) are such that the particle size ranges from 0.01 μm to 3.0 μm, preferably 0.02 μm to 2.0 μm. It is preferable that. When the dielectric is photographed with a scanning electron microscope (SEM) and a straight line is drawn on the dielectric particle on the photograph, the length of the longest straight line across the dielectric particle is The length of the dielectric particle is defined as the diameter of the dielectric particle. Then, an average value of the diameters of the dielectric particles in the measurement visual field is defined as the dielectric particle size.

Examples of the resin and / or resin composition and / or compound contained in the resin layer include methyl ethyl ketone (MEK), cyclopentanone, dimethylformamide, dimethylacetamide, N-methylpyrrolidone, toluene, methanol, ethanol, propylene glycol monomethyl ether , Dimethylformamide, dimethylacetamide, cyclohexanone, ethyl cellosolve, N-methyl-2-pyrrolidone, N, N-dimethylacetamide, N, N-dimethylformamide and the like to obtain a resin liquid (resin varnish). The surface of the copper foil with a carrier is coated on the surface of the ultrathin copper layer by, for example, a roll coater method, and then heated and dried as necessary to remove the solvent to obtain a B stage state. For example, a hot air drying furnace may be used for drying, and the drying temperature may be 100 to 250 ° C, preferably 130 to 200 ° C. The composition of the resin layer is dissolved using a solvent, and the resin solid content is 3 wt% to 70 wt%, preferably 3 wt% to 60 wt%, preferably 10 wt% to 40 wt%, more preferably 25 wt% to 40 wt%. It is good also as a resin liquid. In addition, it is most preferable at this stage from an environmental standpoint to dissolve using a mixed solvent of methyl ethyl ketone and cyclopentanone. In addition, it is preferable to use the solvent whose boiling point is the range of 50 to 200 degreeC as a solvent.
The resin layer is preferably a semi-cured resin film having a resin flow in the range of 5% to 35% when measured according to MIL-P-13949G in the MIL standard.
In this specification, the resin flow is based on MIL-P-13949G in the MIL standard. Four 10 cm square samples are sampled from a resin-treated surface-treated copper foil with a resin thickness of 55 μm. In a state in which the samples are stacked (laminated body), the values are calculated based on Equation 1 from the result of measuring the resin outflow weight at the time of pressing at 171 ° C., pressing pressure of 14 kgf / cm 2 and pressing time of 10 minutes. is there.

  The surface-treated copper foil (resin-treated surface-treated copper foil) provided with the resin layer is obtained by superposing the resin layer on a substrate and then thermocompressing the whole to thermally cure the resin layer, and then the surface-treated copper foil. When is an ultra-thin copper layer of a copper foil with a carrier, the carrier is peeled off to expose the ultra-thin copper layer (of course, the surface on the intermediate layer side of the ultra-thin copper layer is exposed) The surface-treated copper foil is used in a form in which a predetermined wiring pattern is formed from the surface opposite to the surface subjected to the roughening treatment.

  When this surface-treated copper foil with resin is used, the number of prepreg materials used in the production of the multilayer printed wiring board can be reduced. In addition, the copper-clad laminate can be manufactured even if the resin layer is made thick enough to ensure interlayer insulation or no prepreg material is used. At this time, the surface smoothness can be further improved by undercoating the surface of the substrate with an insulating resin.

In addition, when the prepreg material is not used, the material cost of the prepreg material is saved and the laminating process is simplified, which is economically advantageous. Moreover, the multilayer printed wiring board manufactured by the thickness of the prepreg material is used. The thickness is reduced, and there is an advantage that an extremely thin multilayer printed wiring board having a thickness of one layer of 100 μm or less can be manufactured.
The thickness of the resin layer is preferably 0.1 to 120 μm.

When the thickness of the resin layer becomes thinner than 0.1 μm, the adhesive strength is reduced, and when the surface-treated copper foil with resin is laminated on the base material provided with the inner layer material without interposing the prepreg material, the circuit of the inner layer material It may be difficult to ensure interlayer insulation between the two. On the other hand, if the thickness of the resin layer is thicker than 120 μm, it is difficult to form a resin layer having a desired thickness in a single coating process, which may be economically disadvantageous because of extra material costs and man-hours.
In addition, when the surface-treated copper foil having a resin layer is used for manufacturing an extremely thin multilayer printed wiring board, the thickness of the resin layer is 0.1 μm to 5 μm, more preferably 0.5 μm to 5 μm, More preferably, the thickness is 1 μm to 5 μm in order to reduce the thickness of the multilayer printed wiring board.

Furthermore, a printed circuit board is completed by mounting electronic components on the printed wiring board. In the present invention, the “printed wiring board” includes a printed wiring board, a printed circuit board, and a printed board on which electronic parts are mounted as described above.
In addition, an electronic device may be manufactured using the printed wiring board, an electronic device may be manufactured using a printed circuit board on which the electronic components are mounted, and a print on which the electronic components are mounted. An electronic device may be manufactured using a substrate. Below, some examples of the manufacturing process of the printed wiring board using the copper foil with a carrier which concerns on this invention are shown.

  In one embodiment of a method for producing a printed wiring board according to the present invention, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention, a step of laminating the copper foil with a carrier and an insulating substrate, and with the carrier After laminating the copper foil and the insulating substrate so that the ultrathin copper layer side faces the insulating substrate, a copper-clad laminate is formed through a step of peeling the carrier of the copper foil with carrier, and then a semi-additive method, a modified semi-conductor A step of forming a circuit by any one of an additive method, a partial additive method, and a subtractive method. It is also possible for the insulating substrate to contain an inner layer circuit.

  In the present invention, the semi-additive method refers to a method in which a thin electroless plating is performed on an insulating substrate or a copper foil seed layer, a pattern is formed, and then a conductive pattern is formed using electroplating and etching.

Therefore, in one embodiment of a method for producing a printed wiring board according to the present invention using a semi-additive method, a step of preparing a copper foil with a carrier and an insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Removing all of the ultrathin copper layer exposed by peeling the carrier by a method such as etching or plasma using a corrosive solution such as acid,
Providing a through hole or / and a blind via in the resin exposed by removing the ultrathin copper layer by etching;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the resin and the through hole or / and the blind via;
Providing a plating resist on the electroless plating layer;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using a semi-additive method, a step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via in the ultrathin copper layer exposed by peeling the carrier and the insulating resin substrate;
Performing a desmear process on the region including the through hole or / and the blind via,
Removing all of the ultrathin copper layer exposed by peeling the carrier by a method such as etching or plasma using a corrosive solution such as acid,
Providing an electroless plating layer for the resin and the region including the through hole or / and the blind via exposed by removing the ultrathin copper layer by etching or the like;
Providing a plating resist on the electroless plating layer;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using a semi-additive method, a step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via in the ultrathin copper layer exposed by peeling the carrier and the insulating resin substrate;
Removing all of the ultrathin copper layer exposed by peeling the carrier by a method such as etching or plasma using a corrosive solution such as acid,
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the resin and the region including the through hole or / and the blind via exposed by removing the ultrathin copper layer by etching or the like;
Providing a plating resist on the electroless plating layer;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using a semi-additive method, a step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Removing all of the ultrathin copper layer exposed by peeling the carrier by a method such as etching or plasma using a corrosive solution such as acid,
Providing an electroless plating layer on the surface of the resin exposed by removing the ultrathin copper layer by etching;
Providing a plating resist on the electroless plating layer;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing the electroless plating layer and the ultrathin copper layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

  In the present invention, the modified semi-additive method is a method in which a metal foil is laminated on an insulating layer, a non-circuit forming portion is protected by a plating resist, and the copper is thickened in the circuit forming portion by electrolytic plating, and then the resist is removed. Then, a method of forming a circuit on the insulating layer by removing the metal foil other than the circuit forming portion by (flash) etching is indicated.

Therefore, in one embodiment of the method for producing a printed wiring board according to the present invention using the modified semi-additive method, the step of preparing the copper foil with carrier and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Providing a plating resist on the surface of the ultrathin copper layer exposed by peeling the carrier,
Forming a circuit by electrolytic plating after providing the plating resist;
Removing the plating resist;
Removing the ultra-thin copper layer exposed by removing the plating resist by flash etching;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using the modified semi-additive method, the step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a plating resist on the exposed ultrathin copper layer by peeling off the carrier;
Exposing the plating resist, and then removing the plating resist in a region where a circuit is formed;
Providing an electrolytic plating layer in a region where the circuit from which the plating resist has been removed is formed;
Removing the plating resist;
Removing an ultrathin copper layer in a region other than the region where the circuit is formed by flash etching or the like;
including.

  In the present invention, the partial additive method means that a catalyst circuit is formed on a substrate provided with a conductor layer, and if necessary, a substrate provided with holes for through holes or via holes, and etched to form a conductor circuit. Then, after providing a solder resist or a plating resist as necessary, on the conductor circuit, by performing a thickness by electroless plating treatment (further electrolytic plating treatment if necessary) on a through hole or via hole, It refers to a method of manufacturing a printed wiring board.

Therefore, in one embodiment of the method for producing a printed wiring board according to the present invention using a partly additive method, a step of preparing the copper foil with carrier and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Applying catalyst nuclei to the region containing the through-holes and / or blind vias;
Providing an etching resist on the surface of the ultrathin copper layer exposed by peeling the carrier,
Exposing the etching resist to form a circuit pattern;
Removing the ultrathin copper layer and the catalyst nucleus by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
A step of providing a solder resist or a plating resist on the surface of the insulating substrate exposed by removing the ultrathin copper layer and the catalyst core by a method such as etching or plasma using a corrosive solution such as an acid;
Providing an electroless plating layer in a region where the solder resist or plating resist is not provided,
including.

  In the present invention, the subtractive method refers to a method of forming a conductor pattern by selectively removing unnecessary portions of a copper foil on a copper clad laminate by etching or the like.

Therefore, in one embodiment of the method for producing a printed wiring board according to the present invention using a subtractive method, a step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Providing an electroplating layer on the surface of the electroless plating layer;
A step of providing an etching resist on the surface of the electrolytic plating layer or / and the ultrathin copper layer;
Exposing the etching resist to form a circuit pattern;
Removing the ultrathin copper layer and the electroless plating layer and the electrolytic plating layer by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
including.

In another embodiment of the method for producing a printed wiring board according to the present invention using a subtractive method, a step of preparing the carrier-attached copper foil and the insulating substrate according to the present invention,
Laminating the copper foil with carrier and an insulating substrate;
A step of peeling the carrier of the copper foil with carrier after laminating the copper foil with carrier and the insulating substrate;
Providing a through hole or / and a blind via on the insulating substrate and the ultrathin copper layer exposed by peeling the carrier;
Performing a desmear process on the region including the through hole or / and the blind via,
Providing an electroless plating layer for the region including the through hole or / and the blind via;
Forming a mask on the surface of the electroless plating layer;
Providing an electroplating layer on the surface of the electroless plating layer on which no mask is formed;
A step of providing an etching resist on the surface of the electrolytic plating layer or / and the ultrathin copper layer;
Exposing the etching resist to form a circuit pattern;
Removing the ultra-thin copper layer and the electroless plating layer by a method such as etching or plasma using a corrosive solution such as an acid to form a circuit;
Removing the etching resist;
including.

  The process of providing a through hole or / and a blind via and the subsequent desmear process may not be performed.

Here, the specific example of the manufacturing method of the printed wiring board using the copper foil with a carrier of this invention is demonstrated in detail using drawing. Note that, here, a copper foil with a carrier having an ultrathin copper layer on which a roughened layer is formed as a surface-treated layer will be described as an example. However, the present invention is not limited to this, and the carrier whose surface-treated layer is not a roughened layer. The following method for producing a printed wiring board can be similarly performed using an attached copper foil.
First, as shown to FIG. 1-A, the copper foil with a carrier (1st layer) which has the ultra-thin copper layer in which the roughening process layer was formed on the surface is prepared.
Next, as shown in FIG. 1-B, a resist is applied onto the roughened layer of the ultrathin copper layer, exposed and developed, and etched into a predetermined shape.
Next, as shown in FIG. 1-C, after the plating for the circuit is formed, the resist is removed to form a circuit plating having a predetermined shape.
Next, as shown in FIG. 2-D, an embedding resin is provided on the ultrathin copper layer so as to cover the circuit plating (so that the circuit plating is buried), and then the resin layer is laminated, followed by another carrier. A copper foil (second layer) is bonded from the ultrathin copper layer side.
Next, as shown to FIG. 2-E, a carrier is peeled from the copper foil with a carrier of the 2nd layer.
Next, as shown in FIG. 2-F, laser drilling is performed at a predetermined position of the resin layer to expose the circuit plating and form a blind via.
Next, as shown in FIG. 3G, copper is embedded in the blind via to form a via fill.
Next, as shown in FIG. 3H, circuit plating is formed on the via fill as shown in FIGS. 1-B and 1-C.
Next, as shown to FIG. 3-I, a carrier is peeled from the copper foil with a carrier of the 1st layer.
Next, as shown in FIG. 4J, the ultrathin copper layers on both surfaces are removed by flash etching, and the surface of the circuit plating in the resin layer is exposed.
Next, as shown in FIG. 4K, bumps are formed on the circuit plating in the resin layer, and copper pillars are formed on the solder. Thus, the printed wiring board using the copper foil with a carrier of this invention is produced.

  As the another copper foil with a carrier (second layer), the copper foil with a carrier of the present invention may be used, a conventional copper foil with a carrier may be used, and a normal copper foil may be further used. Further, one or more circuits may be formed on the second layer circuit shown in FIG. 3H, and these circuits may be formed by a semi-additive method, a subtractive method, a partial additive method, or a modified semi-conductor method. You may carry out by any method of an additive method.

  Moreover, the copper foil with a carrier used for the said 1st layer may have a board | substrate on the carrier side surface of the said copper foil with a carrier. By having the said board | substrate, since the copper foil with a carrier used for the 1st layer is supported and it becomes difficult to wrinkle, there exists an advantage that productivity improves. As the substrate, any substrate can be used as long as it has an effect of supporting the carrier-attached copper foil used in the first layer. For example, the carrier, prepreg, resin layer or known carrier, prepreg, resin layer, metal plate, metal foil, inorganic compound plate, inorganic compound foil, organic compound plate, organic compound A foil can be used.

  Although there is no restriction | limiting in particular about the timing which forms a board | substrate in the carrier side surface, It is necessary to form before peeling a carrier. In particular, it is preferably formed before the step of forming a resin layer on the ultrathin copper layer side surface of the copper foil with carrier, and the step of forming a circuit on the ultrathin copper layer side surface of the copper foil with carrier More preferably, it is formed before.

  A known resin or prepreg can be used as the embedding resin (resin). For example, a prepreg that is a glass cloth impregnated with BT (bismaleimide triazine) resin or BT resin, an ABF film or ABF manufactured by Ajinomoto Fine Techno Co., Ltd. can be used. The embedding resin may include a thermosetting resin or a thermoplastic resin. The embedding resin may include a thermoplastic resin. The type of the embedded resin is not particularly limited. For example, epoxy resin, polyimide resin, polyfunctional cyanate compound, maleimide compound, polyvinyl acetal resin, urethane resin, block copolymer polyimide resin, block copolymer Resin including polyimide resin, paper base phenolic resin, paper base epoxy resin, synthetic fiber cloth base epoxy resin, glass cloth / paper composite base epoxy resin, glass cloth / glass non-woven composite base epoxy resin and glass A cloth base epoxy resin, a polyester film, a polyimide film, a liquid crystal polymer film, a fluororesin film, etc. can be mentioned as a suitable thing.

  Hereinafter, description will be given based on experimental examples. In addition, this experiment example is an example to the last, and is not restrict | limited only to this example.

1. Production of Copper Foil with Carrier A copper foil with a carrier was produced by the following procedure.
First, a long electrolytic copper foil or rolled copper foil having a thickness shown in Table 1 was prepared as a carrier.
The electrolytic copper foil was manufactured under the following conditions.
(Electrolytic bath composition)
Cu: 80 to 120 g / L
H ₂ SO _4: 80~120g / L
Cl: 20-80 mg / L
Nika: 0.1-6.0 mg / L
(Electrolytic conditions)
Liquid temperature: 55-65 degreeC
Current density: 100 A / dm ²
Electrolyte flow rate: 1.5 m / sec

  As the rolled copper foil, Examples 9 and 12 used tough pitch copper (tough pitch copper specified in JIS H3100 C1100), and Examples 10 and 11 used oxygen-free copper (oxygen-free copper specified in JIS H3100 C1020). “Rolled copper foil (Ag 180 ppm)” in the carrier type column of Table 1 means that 180 mass ppm of Ag was added to tough pitch copper.

<Intermediate layer of experimental example>
An intermediate layer was formed on the glossy surface (shiny surface) of the copper foil by electroplating using a roll-to-roll-type continuous plating line under the following conditions.
-Ni layer Nickel sulfate: 250-300 g / L
Nickel chloride: 35 to 45 g / L
Nickel acetate: 10-20g / L
Trisodium citrate: 15-30 g / L
Brightener: Saccharin, butynediol, etc. Sodium dodecyl sulfate: 30-100 ppm
pH: 4-6
Bath temperature: 50-70 ° C
Current density: 3-15 A / dm ²
Adhesion amount: 4000 μg / dm ²

After washing with water and pickling, on the roll-to-roll-type continuous plating line, a Cr layer with an adhesion amount of 10 μg / dm ² was deposited on the Ni layer by electrolytic chromate treatment under the following conditions. .
Electrolytic chromate treatment Liquid composition: potassium dichromate 1-10 g / L, zinc 0-5 g / L
pH: 3-4
Liquid temperature: 50-60 degreeC
Current density: 0.1-2.6 A / dm ²
Coulomb amount: 0.5-30 As / dm ²

<Ultrathin copper layer in the experimental example>
Subsequently, on a roll-to-roll type continuous plating line, an ultrathin copper layer having a thickness of 3 μm was formed on the intermediate layer by electroplating under the following conditions to produce a copper foil with a carrier.
-Ultrathin copper layer Copper concentration: 30-120 g / L
H ₂ SO ₄ concentration: 20 to 120 g / L
Electrolyte temperature: 20-80 ° C
Current density: 10 to 100 A / dm ²

<Surface treatment layer of experimental example>
Surface treatment was performed on the surface of the ultrathin copper layer described above under the following surface treatment conditions. Table 1 shows the layer structure of the surface treatment layer formed by the surface treatment.
In some experimental examples, the surface of the ultrathin copper layer is selected from Cu—W alloy plating, Cu—P alloy plating, and Cu—Co—Ni alloy plating under the following conditions as a roughening treatment. Went.

Cu-W alloy plating (Examples 1, 2, 15, 16)
Liquid composition: Cu 15 g / liter, sulfuric acid 100 g / liter, W 5 mg / liter Temperature: 25 ° C.
(First stage)
Current density (D _k ): 90 A / dm ²
Time: 1.5 seconds (second stage)
Current density (D _k ): 20 A / dm ²
Time: 3 seconds

Cu-P alloy plating (Examples 3 and 4)
Liquid composition: Cu 30 g / liter, sulfuric acid 100 g / liter, P 500 mg / liter Temperature: 30 ° C.
(First stage)
Current density (D _k ): 140 A / dm ²
Time: 0.6 seconds (second stage)
Current density (D _k ): 20 A / dm ²
Time: 2.0 seconds

Cu-Co-Ni alloy plating (Examples 5, 6, 14)
Liquid composition: Cu 15 g / liter, Co 8 g / liter, Ni 8 g / liter pH: 1-3
Temperature: 40 ° C
(First stage)
Current density (D _k ): 45 A / dm ²
Time: 0.6 seconds (second stage)
Current density (D _k ): 30 A / dm ²
Time: 0.8 seconds

  Next, at least one treatment selected from the following heat treatment, rust prevention treatment, chromate treatment, and silane coupling treatment was performed in this order. The surface was washed with water before each treatment.

・ Heat-resistant treatment (forms a heat-resistant layer)
Liquid composition: Co 1-8 g / liter, Ni 10-20 g / liter pH: 2-3
Temperature: 40 ° C
Current density (D _k ): 5 A / dm ²
Time: 1.0 seconds

・ Rust prevention treatment (forms a rust prevention layer)
Liquid composition: Ni 15-30 g / liter, Zn 1-10 g / liter pH: 2-4
Temperature: 40 ° C
Current density (D _k ): 5 A / dm ²
Time: 1.0 seconds

・ Electrolytic chromate treatment (form chromate treatment layer)
Solution _{composition: K 2 Cr 2 O 7:} 1~10g / l, Zn: 0 to 5 g / l pH: 2 to 4
Temperature: 40 ° C
Current density (D _k ): 1 A / dm ²
Time: 1.0 seconds

・ Silane coupling treatment (forms a silane coupling treatment layer)
A silane coupling agent coating treatment is performed by spraying a 1.0% by volume aqueous solution of 3-glycidoxypropyltrimethoxysilane on the surface to be treated, and then dried for 2 seconds or more in an atmosphere of 70 ° C. or more and 200 ° C. or less The surface moisture was removed.

・ Resin layer (Example 13, 14, 15)
The resin layer is applied to the surface of the ultrathin copper layer by applying a pre-curing resin using a gravure coating method, and then adjusting the thickness of the resin coating to 10 μm using a doctor blade in a dry atmosphere at 200 ° C. The resin component was cured while volatilizing the solvent. The resin used was an epoxy resin (bisphenol A type epoxy resin manufactured by DIC Corporation).

  In Example 16, the surface of the roughening treatment (Cu—W alloy plating), heat-resistant layer, rust prevention layer, chromate treatment layer, silane coupling treatment layer is also applied to the carrier surface opposite to the ultrathin copper layer side. Processed.

-Heat treatment-
Next, each copper foil with a carrier was subjected to a heat treatment under the conditions described in Tables 2 to 4 under a nitrogen gas atmosphere having a purity of 99.9% or higher. The heating rate in Tables 2 to 4 is the heating rate until the temperature (heating temperature) described in the heat treatment conditions is first reached. The cooling time to room temperature after the heat treatment was 1 to 6 hours.
Moreover, about Examples 1-16, it heat-processed in the state which wound the copper foil with a carrier around the hollow tube (outside diameter 11cm, thickness 0.5cm) made from stainless steel.
Moreover, about Examples 1-16, the heat processing was performed by setting the tension | tensile_strength at the time of winding to the said hollow tube as the setting of Tables 2-4, respectively.
Moreover, the heat processing was performed by setting the rotational speed of the said hollow tube as the setting of Tables 2-4, respectively.

2. Evaluation of Copper Foil with Carrier For the copper foil with carrier of Examples 1 to 16 produced as described above, the following evaluation tests were performed before and after the heat treatment, respectively. The evaluation results are shown in Tables 2-4. In addition, about description of the number of the experiment example after a heating of Tables 2-4, for example, "Example 1-1"-"Example 1-50" are after heating "Example 1" which is a sample before a heating, respectively. A sample of is shown.

-Evaluation of wettability of etching solution-
Place the copper foil with carrier (except for the one with resin layer) on the horizontal surface with the surface treatment layer on the ultrathin copper foil side on the top, and make the composition of sulfuric acid 24 wt%-hydrogen peroxide 15 wt% (the balance is water) 30 μL of the etching solution was dropped at one place using a pipette, and the etching solution was wiped off after being left for 30 seconds. Since the sulfuric acid-hydrogen peroxide etching solution spreads while wetting the surface treatment layer and the ultrathin copper layer underneath it, the wettability of the etching solution near the surface is uniform if the trace of the droplet is close to a perfect circle. If it is an irregular shape, it can be determined that it is non-uniform. Further, it can be said that the larger the maximum diameter of the droplet trace, the better the etching solution wettability and the better the removability by the etching solution.

-Wetting uniformity Therefore, the maximum diameter and the minimum diameter of the trace of the droplet are measured, and if the difference is 10 mm or less, the wettability of the etching solution is sufficiently uniform (Tables 2-4: Wetting uniformity column " ○ ”) 5 mm or less, more uniform (Table 2-4: Wetting uniformity column“ ◎ ”). Further, when the difference between the maximum diameter and the minimum diameter of the droplet trace is larger than 10 mm, the wettability of the etching solution is not sufficiently uniform (Tables 2 to 4: Wetting uniformity column “×”). did. Here, “wetting uniformity maximum-minimum” in Tables 2 to 4 was calculated by “maximum diameter of droplet trace (mm) −minimum diameter of droplet trace (mm)”.

・ Wettability When the maximum diameter of the trace of the droplet is measured and the maximum diameter is 25 mm or more, the wettability of the etching solution is sufficiently good (Tables 2 to 4: wettability column “◯”), and 35 mm or more. (Tables 2 to 4: wettability column “◎”). The case where the maximum diameter was less than 25 mm was regarded as insufficient etching solution wettability (Tables 2 to 4: wettability column “x”). Here, the “maximum wettability diameter” in Tables 2 to 4 was “maximum diameter of droplet trace (mm)”.
In the above-mentioned evaluation of “wetting uniformity” and “wetting”, the minimum diameter of the circle surrounding the droplet trace is defined as the “maximum diameter of the droplet trace”, and the maximum circle included in the droplet trace is determined. The diameter was defined as “minimum diameter of trace of droplet”.

-Evaluation of carrier tensile strength-
The tensile strength of the carrier measured at room temperature after the heat treatment step was measured as follows.
First, the carrier was peeled off about the produced copper foil with a carrier. Next, the tensile strength (tensile strength) of the carrier was determined by a tensile test according to JIS Z 2241.

-Evaluation of circuit linearity (circuit formability)-
After bonding the ultrathin copper foil side of the copper foil with a carrier to the bismaleimide triazine resin prepreg by thermocompression bonding, the carrier is peeled off and removed, and then the exposed ultrathin copper layer surface has a patterned copper plating layer having a width of 21 μm. L / S = 21 μm / 9 μm (total thickness of the ultrathin copper layer and the patterned copper plating layer is 16.5 μm). Subsequently, the pattern copper plating layer is formed on the circuit upper end width 12 under the following etching conditions. Flash etching was performed until a copper plating layer of ˜15 μm was formed to form a circuit. Subsequently, as shown in FIG. 5, the difference (μm) between the maximum value and the minimum value of the circuit lower end width as viewed from the circuit upper surface was measured, and the average value was measured at five locations. If the difference between the maximum value and the minimum value was 2 μm or less, it was judged that the circuit had good circuit linearity, and it was marked ◎. In addition, when the difference between the maximum value and the minimum value is more than 2 μm and not more than 4 μm, it is marked as ◯. Moreover, when the difference between the maximum value and the minimum value exceeded 4 μm, it was marked as x.
(Etching conditions)
・ Etching type: Spray etching ・ Spray nozzle: Full cone type ・ Spray pressure: 0.10 MPa
・ Etching temperature: 30 ℃
・ Etching solution composition:
H ₂ O ₂ 18g / L
H ₂ SO ₄ 92 g / L
Cu 8g / L
Additive FE-830IIW3C appropriate amount made by JCU Corporation

-Observation of wrinkles-
The presence or absence of wrinkles in the range of a length of 5 m on the surface of the ultrathin copper layer after the heat treatment of each experimental example was visually observed. When the number of places where wrinkles having a length of 10 cm or more were confirmed was 0, the case of 1 was ◯, the case of 2 was △, and the case of 3 or more was x.

-Degree of oxidation-
For each experimental example, after the heat treatment, the first volume was unwound and a sample having a length of 1 m of the second volume was visually observed. At this time, the color change area due to oxidation is 5% or less, ◎, the color change area due to oxidation is over 5% and 10% or less, and the color change area due to oxidation is over 10% and 15% or less. ◯, the case where the discoloration area due to oxidation is more than 15% and 20% or less is Δ, and the case where the discoloration area due to oxidation is more than 20% is ×.
Test conditions and evaluation results are shown in Tables 1-4.

(Evaluation results)
Example 1-1 to Example 1-48, Example 2-1 to Example 2-3, Example 3-5 to Example 3-13, and Example 4-1 to Example 16-1 are all circuit linearity (circuit formability). ) Was good. In Examples 1 to 4, Example 7 to Example 10, and Example 14 to Example 16, the circuit linearity (circuit formability) was poor before the heat treatment, but the circuit linearity (circuit formation) was determined by appropriate heat treatment. It can be seen that the property is improved.
Further, Example 1-1 to Example 1-48, Example 2-1 to Example 2-6, Example 3-5 to Example 3-13, Example 4-1 to Example 8-1, Example 11-1 and Example 16- For No. 1, the wettability of the etching solution was also good.
In Example 1-49, the temperature of the heat treatment was low, and the circuit linearity (circuit formability) was poor.
In Example 1-50, the heat treatment time was short and the circuit linearity (circuit formability) was poor.
In Example 2-4, the heat treatment time was long, and the circuit linearity (circuit formability) became poor due to the coarsening of crystal grains.
In Examples 2-5 and 2-6, the temperature of the heat treatment was high, and the circuit linearity (circuit formability) became poor due to the coarsening of the crystal grains.
In Examples 3-1 to 3-4, the temperature increase rate of the heat treatment was small, and the circuit linearity (circuit formability) was poor.

Claims (32)

  A copper foil with a carrier having a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer including a silane coupling treatment layer in this order is subjected to a heat treatment at a heating temperature of 100 ° C. to 220 ° C. for 1 hour to 8 hours. The manufacturing method of copper foil with a carrier including a heat treatment process.   The manufacturing method of the copper foil with a carrier of Claim 1 which performs the heat processing for 1 hour-6 hours at the heating temperature of 100 to 220 degreeC in the said heat processing process.   The manufacturing method of the copper foil with a carrier of Claim 2 which performs the heat processing for 2 hours-4 hours at the heating temperature of 160 to 220 degreeC in the said heat processing process.   The manufacturing method of the copper foil with a carrier as described in any one of Claims 1-3 which heat-processes in inert gas atmosphere in the said heat processing process.   The manufacturing method of the copper foil with a carrier as described in any one of Claims 1-4 which heat-processes in the said heat processing process in the state which wound copper foil with a carrier around metal hollow tubes.   The manufacturing method of the copper foil with a carrier of Claim 5 which heat-processes by making the tension | tensile_strength at the time of winding the copper foil with a carrier around a metal hollow tube into 5-100 kgf / m in the said heat processing process.   The manufacturing method of the copper foil with a carrier of Claim 6 which heat-processes by making the tension | tensile_strength at the time of winding the copper foil with a carrier around a metal hollow tube into 20-100 kgf / m in the said heat processing process.   In the heat treatment step, heat treatment is performed while rotating the hollow tube at a speed of 0.01 to 600 rotations / hour in a state where the copper foil with a carrier is wound around a metal hollow tube. The manufacturing method of the copper foil with a carrier as described in any one of Claims 7.   The method for producing a copper foil with a carrier according to any one of claims 1 to 8, wherein the copper foil with a carrier before the heat treatment further comprises an intermediate layer and an ultrathin copper layer in this order on the surface on the carrier side. .   The manufacturing method of the copper foil with a carrier as described in any one of Claims 1-9 in which the copper foil with a carrier before the said heat processing has a surface treatment layer in the surface of the said carrier side further.   The manufacturing method of the copper foil with a carrier as described in any one of Claims 1-10 in which the said surface treatment layer contains a roughening process layer.   12. The surface treatment layer according to claim 11, further comprising at least one layer selected from the group consisting of a heat-resistant layer, a rust prevention layer, a chromate treatment layer, and a silane coupling treatment layer on the surface of the roughening treatment layer. The manufacturing method of copper foil with a carrier.   The copper foil with a carrier before the heat treatment is selected from the group consisting of a roughening treatment layer, a heat-resistant layer, a rust prevention layer, a chromate treatment layer and a silane coupling treatment layer as a surface treatment layer on the surface of the ultrathin copper layer. The manufacturing method of the copper foil with a carrier as described in any one of Claims 1-10 which has the 1 or more types of layer made.   The manufacturing method of the copper foil with a carrier as described in any one of Claims 1-13 with which the copper foil with a carrier before the said heat processing equips the said surface treatment layer with a resin layer.   It is a manufacturing method of the copper foil with a carrier as described in any one of Claims 1-14, Comprising: The manufacturing method of the copper foil with a carrier with favorable circuit formation property.   The manufacturing method of a copper clad laminated board which manufactures a copper clad laminated board using the copper foil with a carrier produced by the method as described in any one of Claims 1-15.   The manufacturing method of a printed wiring board which manufactures a printed wiring board using the copper foil with a carrier produced by the method as described in any one of Claims 1-15. Preparing a copper foil with a carrier and an insulating substrate produced by the method according to any one of claims 1 to 15,
A step of laminating the copper foil with carrier and an insulating substrate; and
After laminating the carrier-attached copper foil and the insulating substrate, forming a copper-clad laminate through a step of peeling the carrier of the carrier-attached copper foil,
Then, the manufacturing method of a printed wiring board including the process of forming a circuit by any method of a semi-additive method, a subtractive method, a partly additive method, or a modified semi-additive method. Forming a circuit on the ultrathin copper layer side surface or the carrier side surface of the carrier-attached copper foil produced by the method according to any one of claims 1 to 15;
Forming a resin layer on the ultrathin copper layer side surface or the carrier side surface of the copper foil with carrier so that the circuit is buried;
Forming a circuit on the resin layer;
After forming a circuit on the resin layer, peeling the carrier or the ultra-thin copper layer; and
After peeling off the carrier, the ultrathin copper layer or the carrier is removed to expose the circuit embedded in the resin layer formed on the ultrathin copper layer side surface or the carrier side surface. A manufacturing method of a printed wiring board including a process.   The electronic device using the printed wiring board produced by the method as described in any one of Claims 17-19.   The copper foil with a carrier manufactured by the method as described in any one of Claims 1-15.   A copper foil with a carrier provided with a surface treatment layer including a carrier, an intermediate layer, an ultrathin copper layer, and a silane coupling treatment layer in this order, and the copper foil with a carrier is disposed on a horizontal surface on the surface of the ultrathin copper foil. Was placed on the top surface, and 30 μl of an etching solution having a composition of 24% by weight sulfuric acid-15% by weight hydrogen peroxide (the remainder was water) was dropped on one place using a pipette, and the etching solution was wiped off after being left for 30 seconds. Then, the copper foil with a carrier whose difference between the maximum diameter and the minimum diameter of the trace of the etching solution is 10 mm or less.   A copper foil with a carrier provided with a surface treatment layer including a carrier, an intermediate layer, an ultrathin copper layer, and a silane coupling treatment layer in this order, and the copper foil with a carrier is disposed on a horizontal surface on the surface of the ultrathin copper foil. Was placed on the top surface, and 30 μl of an etching solution having a composition of 24% by weight sulfuric acid-15% by weight hydrogen peroxide (the remainder was water) was dropped on one place using a pipette, and the etching solution was wiped off after being left for 30 seconds. Then, the copper foil with a carrier whose maximum diameter of the trace of an etching liquid is 25 mm or more.   A copper foil with a carrier provided with a surface treatment layer including a carrier, an intermediate layer, an ultrathin copper layer, and a silane coupling treatment layer in this order, and the copper foil with a carrier is disposed on a horizontal surface on the surface of the ultrathin copper foil. Was placed on the top surface, and 30 μl of an etching solution having a composition of 24% by weight sulfuric acid-15% by weight hydrogen peroxide (the remainder was water) was dropped on one place using a pipette, and the etching solution was wiped off after being left for 30 seconds. 23. The copper foil with a carrier according to claim 22, wherein the maximum diameter of the trace of the etching solution is 25 mm or more.   A carrier-attached copper foil provided with a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer in this order. The copper foil with a carrier is placed on a horizontal surface with the surface treatment layer on the ultrathin copper foil side as an upper surface, and sulfuric acid 24 An etching solution having a composition of wt% -hydrogen peroxide 15 wt% (with the balance being water) is dropped by 30 μl into one place using a pipette, left for 30 seconds, wiped off the etching solution, The copper foil with a carrier whose difference between the maximum diameter and the minimum diameter is 10 mm or less.   A carrier-attached copper foil provided with a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer in this order. The copper foil with a carrier is placed on a horizontal surface with the surface treatment layer on the ultrathin copper foil side as an upper surface, and sulfuric acid 24 An etching solution having a composition of wt% -hydrogen peroxide 15 wt% (with the balance being water) is dropped by 30 μl into one place using a pipette, left for 30 seconds, wiped off the etching solution, A copper foil with a carrier having a maximum diameter of 25 mm or more.   A carrier-attached copper foil provided with a carrier, an intermediate layer, an ultrathin copper layer, and a surface treatment layer in this order. The copper foil with a carrier is placed on a horizontal surface with the surface treatment layer on the ultrathin copper foil side as an upper surface, and sulfuric acid 24 An etching solution having a composition of wt% -hydrogen peroxide 15 wt% (with the balance being water) is dropped by 30 μl into one place using a pipette, left for 30 seconds, wiped off the etching solution, The copper foil with a carrier according to claim 25, wherein the maximum diameter is 25 mm or more.   The copper foil with a carrier according to any one of claims 22 to 27, wherein a difference between a maximum diameter and a minimum diameter of the trace of the etchant is 5 mm or less.   The copper foil with a carrier according to any one of claims 22 to 28, wherein the maximum diameter of the trace of the etching solution is 35 mm or more.   The copper clad laminated board manufactured using the copper foil with a carrier as described in any one of Claims 22-29.   The printed wiring board manufactured using the copper foil with a carrier as described in any one of Claims 22-29.   An electronic apparatus using the printed wiring board according to claim 31.