JP2016046293A - Semiconductor device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an art to achieve improvement in durability.SOLUTION: A semiconductor device 1 comprises a semiconductor chip 10, a solder 41 for fixing the semiconductor chip 10 and an encapsulation resin 30 for encapsulating the semiconductor chip 10 and the solder 41. A bending elastic modulus of the encapsulation resin 30 is not less than 7000 MPa and not more than 14000 MPa when a temperature of the encapsulation resin 30 is 175°C and the bending elastic modulus is not less than 6000 MPa and not more than 12000 MPa when the temperature of the encapsulation resin 30 is 200°C. A glass transition temperature of the encapsulation resin 30 is equal to or higher than 180°C. A mold shrinkage ratio of the encapsulation resin 30 is not less than 0.04 and not more than 0.1.SELECTED DRAWING: Figure 1

Description

  The technology disclosed in this specification relates to a semiconductor device.

  Patent Document 1 discloses a semiconductor device. The semiconductor device disclosed in Patent Document 1 discloses a semiconductor chip, solder for fixing the semiconductor chip, and a sealing resin for sealing the semiconductor chip and the solder.

JP 2005-129855 A

  In the semiconductor device disclosed in Patent Document 1, when the semiconductor chip generates heat by energization, stress may act on the solder to cause cracks. Further, when the semiconductor chip generates heat, the sealing resin may expand and contract and peel from the semiconductor chip. In addition, the sealing resin may shrink during resin molding, and the sealing resin may peel from the semiconductor chip. When the crack of the solder or the peeling of the sealing resin occurs, the durability of the semiconductor device may be reduced. Therefore, an object of the present specification is to provide a semiconductor device capable of increasing durability.

  A semiconductor device disclosed in this specification includes a semiconductor chip, solder for fixing the semiconductor chip, and a sealing resin for sealing the semiconductor chip and the solder. The bending elastic modulus of the sealing resin is 7000 MPa to 14000 MPa when the temperature of the sealing resin is 175 ° C. and is 6000 MPa to 12000 MPa when the temperature of the sealing resin is 200 ° C. The glass transition temperature of the sealing resin is 180 ° C. or higher. The molding shrinkage of the sealing resin is 0.04 or more and 0.1 or less.

  According to such a configuration, even when the temperature rises, the force with which the sealing resin restrains the semiconductor chip and the solder is difficult to weaken. For this reason, when the temperature rises, cracks in the solder are suppressed, and the sealing resin is prevented from peeling from the semiconductor chip due to a temperature change. Further, the sealing resin hardly shrinks during molding, and the peeling of the sealing resin during molding can be suppressed. Thereby, durability of a semiconductor device can be improved.

1 is a cross-sectional view of a semiconductor device according to a first embodiment. It is sectional drawing of the semiconductor device which concerns on 2nd Embodiment. It is sectional drawing which shows the manufacturing method of a semiconductor device.

[First Embodiment]
Hereinafter, embodiments will be described with reference to the accompanying drawings. As shown in FIG. 1, the semiconductor device 1 according to the first embodiment includes a semiconductor chip 10, and a first metal plate 21 and a second metal plate 22 disposed below and above the semiconductor chip 10, respectively. Yes. Further, the semiconductor device 1 includes a sealing resin 30 that seals the semiconductor chip 10.

  The semiconductor chip 10 has a configuration in which a semiconductor element is formed inside a semiconductor substrate. For example, silicon (Si) or silicon carbide (SiC) can be used as the semiconductor substrate. For example, an IGBT (Insulated Gate Bipolar Transistor) or a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) can be used as the semiconductor chip 10. When the semiconductor chip 10 is, for example, an IGBT, a gate region, an emitter region, a collector region, and the like are formed inside the semiconductor substrate (not shown). The semiconductor chip 10 generates heat during operation. When silicon (Si) is used as the semiconductor substrate, the temperature of the semiconductor chip 10 is about 175 ° C. at the maximum. When silicon carbide (SiC) is used as the semiconductor substrate, the temperature of the semiconductor chip 10 is about 200 ° C. at the maximum.

  A signal electrode 12 is formed on the surface of the semiconductor chip 10. The signal electrode 12 is connected to a signal terminal 52 through a metal wire 51. The signal electrode 12 is electrically connected to an external device (not shown) via a wire 51 and a signal terminal 52, and transmits and receives control signals to and from the external device (not shown).

  The semiconductor chip 10 is disposed between the first metal plate 21 and the second metal plate 22. The upper main surface of the semiconductor chip 10 is fixed to the first metal plate 21 via the solder 41. The lower main surface of the semiconductor chip 10 is fixed to the second metal plate 22 via solder 41 and spacers 42.

  The spacer 42 is disposed between the semiconductor chip 10 and the second metal plate 22. As the spacer 42, for example, a metal block body such as copper (Cu) or aluminum (Al) can be used. Further, the surface of the spacer 42 may be plated with nickel (Ni). The solder 41 is a known alloy for fixing metal parts and electronic parts. As the solder 41, for example, Sn—Pb, Sn—Pb—Ag, Sn—Pb—Cu, Sn—Ag, Sn—Cu, Sn—Sb alloys can be used.

  The 1st metal plate 21 and the 2nd metal plate 22 are arrange | positioned at intervals up and down. As the 1st metal plate 21 and the 2nd metal plate 22, metal plates and metal foil, such as copper (Cu) and aluminum (Al), can be used, for example. Further, the surfaces of the first metal plate 21 and the second metal plate 22 may be plated with nickel (Ni). The first metal plate 21 and the second metal plate 22 have thermal conductivity and conductivity. The lower surface 121 of the first metal plate 21 and the upper surface 122 of the second metal plate 22 are respectively exposed from the sealing resin 30. The lower surface 121 of the first metal plate 21 and the upper surface 122 of the second metal plate 22 are in contact with the cooler 70, respectively.

  The cooler 70 is in close contact with the first metal plate 21 and the second metal plate 22. Coolers 70 are respectively disposed above and below the semiconductor chip 10. The cooler 70 can cool the semiconductor chip 10 via the first metal plate 21 and the second metal plate 22. A flow path is formed inside the cooler 70, and the refrigerant flows through the flow path. The housing of the cooler 70 is formed of a metal having thermal conductivity such as copper (Cu) or aluminum (Al).

  The semiconductor chip 10, the first metal plate 21, the second metal plate 22, the solder 41 and the spacer 42 are covered with a primer 60. A primer 60 is formed between each of these components and the sealing resin 30. As the primer 60, for example, a polyimide primer or a polyimide-modified epoxy primer can be used. Typically, it is preferable to use a polyimide-based primer. The glass transition temperature (Tg) of the primer 60 is preferably 230 ° C. or higher. The flexural modulus (E) of the primer 60 is preferably 1500 MPa or more when the temperature of the primer 60 is 175 ° C. and 1300 MPa or more when the temperature of the primer 60 is 200 ° C.

  The sealing resin 30 seals the semiconductor chip 10, the solder 41, and the spacer 42. The sealing resin 30 is filled around the semiconductor chip 10, the solder 41, and the spacer 42. The sealing resin 30 is filled between the first metal plate 21 and the second metal plate 22. The sealing resin 30 is in close contact with the semiconductor chip 10, the solder 41, the spacer 42, the first metal plate 21 and the second metal plate 22.

  The bending elastic modulus (E) of the sealing resin 30 is not less than 7000 MPa and not more than 14000 MPa when the temperature of the sealing resin 30 is 175 ° C., and is not less than 6000 MPa and not more than 12000 MPa when the temperature of the sealing resin 30 is 200 ° C. It is preferable that The glass transition temperature (Tg) of the sealing resin 30 is preferably 180 ° C. or higher, and the molding shrinkage (MS) of the sealing resin 30 is preferably 0.04% or higher and 0.1% or lower.

  More specifically, the bending elastic modulus (E) of the sealing resin 30 is preferably 8000 MPa or more and 15000 MPa or less, more preferably 8154 MPa or more and 14987 MPa or less when the temperature of the sealing resin 30 is 150 ° C., and 10,000 MPa or more and 14000 MPa or less. Is more preferable. Further, the bending elastic modulus (E) of the sealing resin 30 is preferably 7000 MPa to 14000 MPa, more preferably 7050 MPa to 13602 MPa, and further preferably 9000 MPa to 13000 MPa when the temperature of the sealing resin 30 is 175 ° C. . Further, the bending elastic modulus (E) of the sealing resin 30 is preferably 6000 MPa or more and 12000 MPa or less, more preferably 6170 MPa or more and 11921 MPa or less, and further preferably 8000 MPa or more and 11000 MPa or less when the temperature of the sealing resin 30 is 200 ° C. . The glass transition temperature (Tg) of the sealing resin 30 is preferably 180 ° C. or higher, more preferably 211 ° C. or higher and 257 ° C. or lower, and further preferably 220 ° C. or higher and 250 ° C. or lower. Further, the molding shrinkage (MS) of the sealing resin 30 is preferably 0.04% or more and 0.1% or less, more preferably 0.04% or more and 0.09% or less, and 0.05% or more and 0.08. % Or less is more preferable.

  The bending elastic modulus (E), glass transition temperature (Tg), and molding shrinkage rate (MS) of the sealing resin 30 are the same as those in the “Electrical Functional Materials Industry Association Standard EIMS T 901: 2006 Testing Method for Molding Material for Semiconductor Encapsulation”. It can be measured accordingly.

  The sealing resin 30 contains an epoxy resin as a main component. In addition, the sealing resin 30 may include a curing agent, a stress relaxation agent, a curing accelerator, a filler, and the like. By blending these materials, a resin for molding the sealing resin 30 can be produced.

  As the epoxy resin, for example, at least one selected from the group of polyfunctional naphthalene type epoxy resin, cresol novolak type epoxy resin, triphenylol methane type epoxy resin, biphenyl aralkyl type epoxy resin, phenol novolac type epoxy resin is used. Can do. These can be used alone or in combination. Typically, it is preferable to use a polyfunctional naphthalene type epoxy resin.

  The polyfunctional naphthalene type epoxy resin means an epoxy resin having two or more epoxy groups in the naphthalene ring, and such an epoxy resin is a naphthalene having two or more hydroxyl groups or carboxy groups or one or more amino groups added thereto. It is obtained by a method such as reacting a compound with chloroglycidyl. The average functional group number of the polyfunctional naphthalene type epoxy resin is preferably 3.0 or more, more preferably 3.3 or more and 4.3 or less, and still more preferably 3.7 or more and 3.9 or less. When a polyfunctional naphthalene type epoxy resin is used in the sealing resin 30, the addition amount is preferably 10.00 wt% or more and 16.00 wt% or less, more preferably 11.00 wt% or more and 15.00 wt% or less, and 12. More preferably, it is 00 wt% or more and 14.00 wt% or less. The addition amount is a blending ratio of the material before the sealing resin 30 is molded (before the resin is cured).

  The cresol novolac type epoxy resin is a polyfunctional type epoxy resin having two or more epoxy groups in cresol, and such an epoxy resin can be obtained by a method of reacting epichlorohydrin with cresol and formaldehyde as starting materials. Is. The average functional group number of the cresol novolak type epoxy resin is preferably 5.2 or more, preferably 5.5 or more and 6.5 or less, and more preferably 5.9 or more and 6.1 or less. When the cresol novolac type epoxy resin is used in the sealing resin 30, the addition amount is preferably 7.00 wt% or more and 11.00 wt% or less, more preferably 8.00 wt% or more and 10.00 wt% or less, and 8.50 wt%. % To 9.50 wt% is more preferable. The addition amount is a blending ratio of the material before the sealing resin 30 is molded (before the resin is cured).

  The triphenylol methane type epoxy resin and the biphenyl aralkyl type epoxy resin are epoxy resins having two or more epoxy groups in one molecule, like the above epoxy resins. The average functional group number of the triphenylol methane type epoxy resin is preferably 4.0 or more, more preferably 4.2 or more and 5.2 or less, and even more preferably 4.6 or more and 4.8 or less. When a triphenylol methane type epoxy resin is used in the sealing resin 30, the addition amount is preferably 2.00 wt% or more and 5.00 wt% or less, more preferably 3.00 wt% or more and 4.00 wt% or less. More preferably, it is 30 wt% or more and 3.70 wt% or less. The average functional group number of the biphenyl aralkyl type epoxy resin is preferably 3.0 or more, more preferably 3.2 or more and 4.0 or less, and further preferably 3.5 or more and 3.7 or less. When the biphenyl aralkyl type epoxy resin is used in the sealing resin 30, the addition amount is preferably 11.00 wt% or more and 14.00 wt% or less, more preferably 12.00 wt% or more and 13.00 wt% or less, 12.30 wt% % To 12.70 wt% is more preferable. The addition amount is a blending ratio of the material before the sealing resin 30 is molded (before the resin is cured).

  As a hardening | curing agent, at least 1 sort (s) chosen from the group of a phenol novolak resin, a triphenylol methane resin, and a biphenyl aralkyl resin can be used. These can be used alone or in combination. The addition amount of the curing agent is preferably 6.00 wt% or more and 10.00 wt% or less, more preferably 6.66 wt% or more and 9.17 wt% or less, and further preferably 7.00 wt% or more and 9.00 wt% or less. As the stress relaxation agent, for example, amino-modified silicone oil can be used. As the curing accelerator, for example, triphenylphosphine (TPP) or imidazole can be used. The addition amount of the curing accelerator is preferably 0.11 wt% or more and 0.15 wt% or less, more preferably 0.12 wt% or more and 0.14 wt% or less, and further preferably 0.13 wt%. As the filler, for example, alumina particles or silica particles can be used. The amount of filler added is preferably 75 wt% or more and 85 wt% or less, and more preferably 75 wt% or more and 82 wt% or less. The addition amount is a blending ratio of the material before the sealing resin 30 is molded (before the resin is cured).

  In the semiconductor device 1 having the above configuration, the semiconductor chip 10 generates heat when energized, and the heat generation of the semiconductor chip 10 stops when the energization is stopped. In the semiconductor device 1, the semiconductor chip 10 is cooled by the cooler 70. Thereby, heat generation / cooling of the semiconductor chip 10 is repeated. When heat generation / cooling of the semiconductor chip 10 is repeated, the sealing resin 30 expands and contracts. In addition, stress acts on the solder 41. At this time, according to the semiconductor device 1 described above, even when the semiconductor chip 10 generates heat and the temperature of the sealing resin 30 around the semiconductor chip 10 increases, the bending elastic modulus (E) of the sealing resin 30 is high. Maintained by value. Thereby, even if the sealing resin 30 becomes high temperature, the force which restrains the semiconductor chip 10 and the solder 41 is not weakened. Further, according to the semiconductor device 1 described above, since the glass transition temperature (Tg) of the sealing resin 30 is a high value, even if the semiconductor chip 10 generates heat and the sealing resin 30 reaches a high temperature, the sealing resin 30 It is difficult to become liquid, and the force that restrains the semiconductor chip 10 and the solder 41 does not become weak. Thus, since the force that the sealing resin 30 restrains the semiconductor chip 10 and the solder 41 is difficult to decrease even at high temperatures, the stress applied to the solder 41 at high temperatures is suppressed. Thereby, it can suppress that a crack is generated in the solder 41. Further, according to the semiconductor device 1 described above, since the molding shrinkage rate (MS) of the sealing resin 30 is a low value, even if the sealing resin 30 contracts during molding, the sealing resin 30 remains in the semiconductor chip 10 and the solder 41. Further, peeling from the first metal plate 21 and the second metal plate 22 can be suppressed. Thus, according to said semiconductor device 1, since it can suppress that the crack of the solder 41 and peeling of the sealing resin 30 arise, durability of the semiconductor device 1 can be made high.

  In the semiconductor device 1, the cooler 70 is disposed above and below the semiconductor chip 10, and the semiconductor chip 10 is cooled from above and below by the cooler 70, so that the semiconductor chip 10 is rapidly cooled and the surroundings The sealing resin 30 contracts rapidly. However, according to said sealing resin 30, peeling can be suppressed even if it shrinks rapidly.

  As mentioned above, although one embodiment was described, a specific mode is not limited to the above-mentioned embodiment.

[Second Embodiment]
In the first embodiment, the cooler 70 is in contact with the first metal plate 21 and the second metal plate 22 and cools the semiconductor chip 10 from above and below, but is not limited to this configuration. . As shown in FIG. 2, the semiconductor device 101 according to the second embodiment includes a semiconductor chip 10, a metal plate 23 disposed below the semiconductor chip 10, and a lead frame 24 disposed above the semiconductor chip 10. It has. In FIG. 2, the same components as those in FIG. 1 are denoted by the same reference numerals and description thereof is omitted.

  The semiconductor chip 10 is disposed between the metal plate 23 and the lead frame 24. The upper main surface of the semiconductor chip 10 is fixed to the lead frame 24 via the solder 41. The lower main surface of the semiconductor chip 10 is fixed to the metal plate 23 via the solder 41.

  As a material of the metal plate 23, for example, copper (Cu), aluminum (Al), or the like can be used. Further, the surface of the metal plate 23 may be plated with nickel (Ni). The metal plate 23 has thermal conductivity. A metal film 82 is fixed to the lower surface of the metal plate 23 via an insulating film 81. The insulating film 81 has insulating properties and thermal conductivity. As a material of the insulating film 81, for example, an epoxy resin can be used. As a material of the metal film 82, for example, copper (Cu), aluminum (Al), or the like can be used. The surface of the metal film 82 may be plated with nickel (Ni). The metal film 82 has thermal conductivity. The lower surface of the metal film 82 is exposed from the sealing resin 30. The lower surface of the metal film 82 is in contact with the cooler 70. The cooler 70 is disposed below the semiconductor chip 10.

  As a material of the lead frame 24, for example, copper (Cu), aluminum (Al), or the like can be used. The surface of the lead frame 24 may be plated with nickel (Ni). The lead frame 24 has conductivity. The lead frame 24 is sealed with a sealing resin 30. The lead frame 24 is not in contact with the cooler 70.

  Also in the second embodiment, similarly to the first embodiment, the crack of the solder 41 and the peeling of the sealing resin 30 can be suppressed, and the durability of the semiconductor device 101 can be improved.

[Example]
This will be described in more detail below using examples and comparative examples. In Examples and Comparative Examples, first, resins were prepared according to the formulation shown in Table 1. More specifically, in Examples 1 to 6 and Comparative Examples 1 to 7, the materials shown in Table 1 were dry blended, and then kneaded at 110 ° C. with a roll mill to produce a resin.

Next, tests on the flexural modulus (E), glass transition temperature (Tg), and molding shrinkage rate (MS) were performed using the prepared resin. The test was performed in accordance with “Electrical Functional Materials Industry Association Standard EIMS T 901: 2006 Test Method for Molding Material for Semiconductor Encapsulation”. By this test, the flexural modulus (E), glass transition temperature (Tg), and molding shrinkage rate (MS) of the resins according to Examples 1 to 6 and Comparative Examples 1 to 7 were measured. In the test, the temperature of the mold during molding was set to 175 ° C. Further, the curing was performed under the condition of 175 ° C. × 5 hr. The measurement results are shown in Table 2.

  In the resins according to Examples 1 to 6, as shown in Table 2, the flexural modulus (E) of the resin is 7000 MPa to 14000 MPa when the resin temperature is 175 ° C., and the resin temperature is 200 It is 6000 MPa or more and 12000 MPa or less at the time of ° C. Further, the glass transition temperature (Tg) of the resin is 180 ° C. or higher, and the molding shrinkage (MS) of the resin is 0.04 or higher and 0.1 or lower. On the other hand, none of the resins according to Comparative Examples 1 to 7 satisfies the above numerical ranges according to the examples.

  Then, the semiconductor device 1 (semiconductor device 1 shown in FIG. 1) according to the first embodiment was manufactured using the resins according to Examples 1 to 6 and Comparative Examples 1 to 7. More specifically, as shown in FIG. 3, the semiconductor device 1 before the sealing resin 30 is formed is placed in the mold 100 and the molten resin is injected into the mold 100 and molded. Moreover, it cured on the conditions of 175 degreeC x 4 hours. Thus, the semiconductor device 1 was produced using the resins according to Examples 1 to 6 and Comparative Examples 1 to 7, respectively.

[Evaluation 1]
After manufacturing the semiconductor device 1, peeling of the sealing resin 30 in the semiconductor device 1 was evaluated (Evaluation 1). That is, it was evaluated whether the sealing resin 30 was peeled off due to shrinkage during molding. More specifically, it was measured whether or not the sealing resin 30 was peeled off from the semiconductor chip 10, the first metal plate 21, and the second metal plate 22 using an ultrasonic flaw detector. As an ultrasonic flaw detector, FineSAT manufactured by Hitachi, Ltd. was used. When the sealing resin 30 was not peeled off from the semiconductor chip 10, the solder 41, the first metal plate 21, and the second metal plate 22, it was determined as pass (◯). On the other hand, when the sealing resin 30 was peeled off from the semiconductor chip 10, the first metal plate 21, and the second metal plate 22, it was determined as rejected (x). The evaluation results are shown in Table 2.

[Evaluation 2]
After performing Evaluation 1, the semiconductor device 1 was subjected to a cooling cycle test in which cooling and heating were repeated. A thermal cycle test was performed on each of the semiconductor devices 1 manufactured using the resins according to Examples 1 to 6 and Comparative Examples 1 to 7, respectively. The thermal cycle test was performed under the following four temperature conditions (condition 1, condition 2, condition 3, and condition 4).

  In Condition 1, 3000 cooling-heating cycles between −40 ° C. and 150 ° C. were performed. In Condition 2, 3000 cooling-heating cycles between −40 ° C. and 175 ° C. were performed. Under Condition 3, 3000 cooling-heating cycles between −40 ° C. and 200 ° C. were performed. In Condition 4, 3000 cooling-heating cycles between −40 ° C. and 215 ° C. were performed.

  After performing a thermal cycle test on the semiconductor device 1, peeling of the sealing resin 30 in the semiconductor device 1 was evaluated (Evaluation 2). That is, it was evaluated whether or not the sealing resin 30 was peeled off due to a temperature change. Moreover, the crack of the solder 41 in the semiconductor device 1 was evaluated (Evaluation 2). In the thermal cycle test of Condition 1 to Condition 4, peeling and cracking were evaluated, respectively.

  More specifically, whether or not the sealing resin 30 is peeled off from the semiconductor chip 10, the solder 41, the first metal plate 21, and the second metal plate 22 using the ultrasonic flaw detector as in the above evaluation 1. Was measured. As an ultrasonic flaw detector, FineSAT manufactured by Hitachi, Ltd. was used. When the sealing resin 30 was not peeled off from the semiconductor chip 10, the first metal plate 21, and the second metal plate 22, it was determined as pass (◯). On the other hand, when the sealing resin 30 was peeled off from the semiconductor chip 10, the first metal plate 21, and the second metal plate 22, it was determined as rejected (x).

  Moreover, the cross section of the solder 41 was observed using the ultrasonic flaw detector. As an ultrasonic flaw detector, FineSAT manufactured by Hitachi, Ltd. was used. And the ratio of the area of the crack in the solder 41 after the thermal cycle test to the area of the crack in the solder 41 before the thermal cycle test was examined. When the cross section of the solder 41 was observed, if the crack area after the thermal cycle test did not increase by 20% or more with respect to the crack area before the thermal cycle test, it was determined as pass (◯). On the other hand, when the area of the crack after the thermal cycle test was increased by 20% or more with respect to the area of the crack before the thermal cycle test, it was determined as rejected (x). The evaluation results are shown in Table 2.

  As shown in Table 2, all the resins according to Examples 1 to 6 passed (◯) in the peeling evaluation according to Evaluation 1. Further, in the peeling evaluation and the crack evaluation according to the evaluation 2, all of the conditions 1 and 2 were acceptable (◯). That is, in the resins according to Examples 1 to 6, peeling of the sealing resin 30 and cracking of the solder 41 did not occur even when the thermal cycle test was performed between −40 ° C. and 175 ° C. The resins according to Examples 1 to 4 and Example 6 passed (◯) in Condition 3 in the peeling evaluation and the crack evaluation according to Evaluation 2. That is, in the resins according to Examples 1 to 4 and Example 6, peeling of the sealing resin 30 and cracking of the solder 41 did not occur even when the thermal cycle test was performed between −40 ° C. and 200 ° C. In addition, the resin according to Example 1 passed (◯) in Condition 4 in the peeling evaluation and the crack evaluation according to Evaluation 2. That is, in the resin according to Example 1, peeling of the sealing resin 30 and cracking of the solder 41 did not occur even when the thermal cycle test was performed between −40 ° C. and 215 ° C.

  On the other hand, as shown in Table 2, the resins according to Comparative Example 1 and Comparative Example 3 failed (x) in the peeling evaluation according to Evaluation 1. Therefore, the resin according to Comparative Example 1 and Comparative Example 3 was not subjected to the thermal cycle test according to Conditions 1 to 4. Further, the resins according to Comparative Example 2 and Comparative Example 5 were rejected (x) in Condition 2, Condition 3, and Condition 4 in the peeling evaluation and crack evaluation according to Evaluation 2. That is, when the thermal cycle test was performed between −40 ° C. and a temperature of 175 ° C. or higher, peeling of the sealing resin 30 and cracking of the solder 41 occurred. Further, the resin according to Comparative Example 4 failed (x) in Condition 3 and Condition 4 in the crack evaluation according to Evaluation 2. In the peeling evaluation according to Evaluation 2, it was a failure (x) in Condition 2, Condition 3, and Condition 4. That is, when the thermal cycle test was performed between −40 ° C. and a temperature of 175 ° C. or higher, the solder 41 was cracked. In addition, when the thermal cycle test was performed between −40 ° C. and a temperature of 200 ° C. or higher, peeling of the sealing resin 30 occurred. Further, the resin according to Comparative Example 6 was rejected (x) in Conditions 1 to 4 in the peeling evaluation and the crack evaluation according to Evaluation 2. That is, when the thermal cycle test was performed between −40 ° C. and a temperature of 150 ° C. or higher, peeling of the sealing resin 30 and cracking of the solder 41 occurred. Since the resin according to Comparative Example 7 was not moldable, Evaluation 1 and Evaluation 2 were not performed.

  From the above results, it was confirmed that the resin according to Examples 1 to 6 can suppress the peeling of the sealing resin 30 and the crack of the solder 41. In addition, the same result was confirmed in the configuration according to the second embodiment (configuration shown in FIG. 2).

  When the semiconductor chip 10 is energized, when silicon (Si) is used as the semiconductor substrate, the temperature of the semiconductor chip 10 is about 175 ° C. at the maximum. When silicon carbide (SiC) is used as the semiconductor substrate, the semiconductor chip The maximum temperature of 10 is about 200 ° C. Therefore, it is preferable that the sealing resin 30 has excellent performance even in a heating cycle of 175 ° C. or 200 ° C. In this regard, according to the above Examples 1 to 6, since the peeling of the sealing resin 30 and the crack of the solder 41 did not occur even when the thermal cycle test was performed between −40 ° C. and 175 ° C., sealing It was confirmed that the resin 30 has excellent performance. Also, according to Examples 1 to 4 and Example 6 described above, peeling of the sealing resin 30 and cracking of the solder 41 did not occur even when the thermal cycle test was performed between −40 ° C. and 200 ° C. It was confirmed that the sealing resin 30 had excellent performance.

[Evaluation 3]
About the semiconductor device 1 produced using the resin which concerns on Examples 1-6, the material similar to the evaluation 1 and the evaluation 2 was performed by changing the material of the primer 60. FIG. The evaluation results are shown in Table 3.

  As shown in Table 3, in the resin according to Example 1, when the polyimide-based primer (A) is used, it is acceptable (◯) in the condition 4, and when the polyimide-modified epoxy primer (B) is used, it is rejected in the condition 4. (X). In the resins according to Examples 2 to 4 and 6, when the polyimide-based primer (A) is used, it is acceptable (◯) under the condition 3, and when the polyimide-modified epoxy primer (B) is used, it is not acceptable under the condition 3. It was a pass (x).

  From the above results, it was confirmed that when the polyimide primer (A) was used as the material of the primer 60, peeling of the sealing resin 30 and cracking of the solder 41 could be suppressed. In addition, the same result was confirmed in the configuration according to the second embodiment (configuration shown in FIG. 2).

  The technology according to the above-described embodiment has the following configuration. Note that the technical elements described below are independent technical elements, and exhibit technical usefulness alone or in various combinations.

  The bending elastic modulus of the sealing resin may be 8000 MPa to 15000 MPa when the temperature of the sealing resin is 150 ° C.

  The sealing resin contains a filler, and the amount of filler added may be 75 wt% or more and 85 wt% or less before the resin is cured.

  You may further provide the metal plate each arrange | positioned above and the lower part of a semiconductor chip, and the cooler which touches an upper and lower metal plate, respectively.

  Specific examples of the present invention have been described in detail above, but these are merely examples and do not limit the scope of the claims. The technology described in the claims includes various modifications and changes of the specific examples illustrated above. The technical elements described in this specification or the drawings exhibit technical usefulness alone or in various combinations, and are not limited to the combinations described in the claims at the time of filing. In addition, the technology exemplified in this specification or the drawings can achieve a plurality of objects at the same time, and has technical usefulness by achieving one of the objects.

1: Semiconductor device 10: Semiconductor chip 12: Signal electrode 21: First metal plate 22: Second metal plate 23: Metal plate 24: Lead frame 30: Sealing resin 41: Solder 42: Spacer 51: Wire 52: Signal terminal 60: Primer 70: Cooler 81: Insulating film 82: Metal film 100: Mold 101: Semiconductor device 121: Lower surface 122: Upper surface

Claims (4)

A semiconductor chip;
Solder for fixing the semiconductor chip;
A sealing resin for sealing the semiconductor chip and the solder,
The bending elastic modulus of the sealing resin is 7000 MPa to 14000 MPa when the temperature of the sealing resin is 175 ° C., and 6000 MPa to 12000 MPa when the temperature of the sealing resin is 200 ° C.,
The glass transition temperature of the sealing resin is 180 ° C. or higher,
The semiconductor device having a molding shrinkage of the sealing resin of 0.04 or more and 0.1 or less.   2. The semiconductor device according to claim 1, wherein the bending elastic modulus of the sealing resin is 8000 MPa or more and 15000 MPa or less when the temperature of the sealing resin is 150 ° C. 3.   3. The semiconductor device according to claim 1, wherein the sealing resin includes a filler, and the amount of the filler added is 75 wt% or more and 85 wt% or less before the resin is cured. Metal plates respectively disposed above and below the semiconductor chip;
The semiconductor device according to claim 1, further comprising a cooler that is in contact with the upper and lower metal plates.