JP2016036194A - Electric power conversion device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide an electric power conversion device which achieves high heat radiation performance.SOLUTION: An electric power conversion device according to the invention includes: a power semiconductor module; and a passage formation body in which an opening and a passage connected with the opening are formed. The power semiconductor module includes: a circuit body having a power semiconductor element; a first base part and a second base part; and a frame body connected with the first base part and the second base part. The first base part includes: first fins; and a first seal part which closes a part of the opening and is positioned on a side located close to the opening. The second base part includes: second fins; and a second seal part which closes a part of the opening and is positioned on a side located close to the opening. The frame body is connected with a side of the first base part on which the first seal part is not formed and a side of the second base part on which the second seal part is not formed. The opening is closed by a part of the frame body, the first seal part, and the second seal part.SELECTED DRAWING: Figure 13

Description

  The present invention relates to a power conversion device, and more particularly to a power conversion device that controls a motor for driving a vehicle.

  There is known a power conversion device including a power semiconductor module that houses a circuit body having a power semiconductor element in a metal case. Such a power converter is mounted on an electric vehicle such as an electric vehicle or a hybrid vehicle.

  The power semiconductor module is sealed with a resin in such a manner that the front and back surfaces of the power semiconductor element are soldered to a conductive plate and the electrode terminals are exposed.

  The metal case has a heat radiating portion that is bonded to each of the conductive plates on each side by a heat conductive insulating adhesive. Each heat dissipating part is formed with a plurality of heat dissipating fins. The metal case has a bottomed can shape having a flange portion opened at one end, and the power semiconductor module inserts the electrode terminal of the power semiconductor element into the opening of the metal case. In this state, it is housed in a metal case.

  This metal case has a structure in which two fin plates each having a frame and a plurality of fins are joined. An opening is formed in the frame so as to face the front and back surfaces of the circuit body in which the power semiconductor element is resin-sealed, and a pair of fin plates having a plurality of fins are disposed and joined in the opening ( For example, see Patent Document 1).

  In a state where the power semiconductor module is housed in the metal case, the heat radiating part of the metal case is pressurized so as to sandwich the power semiconductor module, and the inner surface of the metal case and the power semiconductor unit are insulated with heat conductivity. Adhere with an adhesive. (For example, refer to Patent Document 2).

JP 2013-51363 A JP 2010-110143 A

  In such a power converter, in order to reduce the size of the power semiconductor module, further improvement in heat dissipation (improvement in cooling efficiency) is required.

  However, if this metal case has a structure in which two fin plates on which a frame and a plurality of fins are formed are joined, there is a joint between the flange and the fin. It will be long. As a result, when the power semiconductor module is installed in a water channel, a space is created between the flange and the fin, and when the cooling water is flowed, the cooling water that wants to flow through the fin is much in the space where there is no fin with low resistance. Flowing (this flow is called a bypass flow), cooling water flowing to the fin portion is reduced, and the heat transfer coefficient of the fin may be reduced.

  In order to prevent this bypass flow, a spacer for closing the space between the flange and the fin can be provided, but there are disadvantages such as an increase in the number of parts and processes. It is desired to prevent a bypass flow between the flange fins without providing a part such as a spacer.

  Accordingly, an object of the present invention is to provide a power converter having high heat dissipation performance in a power converter using a double-sided cooling power semiconductor device.

  In order to solve the above-described problem, a power conversion device according to the present invention includes a power semiconductor module, an opening for inserting the power semiconductor module, and a flow path forming body that forms a flow path connected to the opening. The power semiconductor module includes a circuit body having a power semiconductor element, a first base part and a second base part that are arranged to face each other so as to sandwich the circuit body, and the first base part and the second base part. And the first base part includes a first fin and a first seal part that closes a part of the opening on a side close to the opening, 2 base part has a 2nd fin and the 2nd seal part which block | closes a part of the said opening in the edge | side near the said opening, The said 1st seal part is not formed in the said frame Connected to a side of the first base portion, and the first base portion Is connected to the second base portion of the side seal portion is not formed, the opening is closed and a portion of the frame member and the first sealing portion by the second sealing portion.

  According to the present invention, since it is not necessary to join the flange and the fin, the distance between the flange and the fin can be shortened, and the bypass flow generated in the gap formed between the flange and the fin can be suppressed. As a result, the cooling water flows sufficiently to the fin part (heat dissipating part), so the heat transfer coefficient of the fin part can be improved, the heat dissipating performance of the power semiconductor module is improved, and a highly reliable power converter is realized. it can.

It is an external appearance perspective view of one embodiment of the power converter of the present invention. FIG. 2 is an exploded perspective view of the power conversion apparatus illustrated in FIG. 1. FIG. 2 is a cross-sectional view of a cooling chamber in which a power semiconductor module 100 is housed in the power conversion apparatus illustrated in FIG. 1. FIG. 3 is an external perspective view of a power semiconductor module 100 illustrated in FIG. 2. 2 is an external perspective view of a circuit body 30 accommodated in a power semiconductor module 100 as viewed from the front side. FIG. FIG. 3 is an external perspective view of a circuit body 30 accommodated in a power semiconductor module 100 as viewed from the back side. FIG. 6 is a perspective view of the circuit body 30 illustrated in FIG. 5 with a sealing resin removed. FIG. 8 is a perspective view of the circuit body 30 illustrated in FIG. 7 before wire bonding between an electrode terminal and a power semiconductor element. FIG. 9 is a cross-sectional view of the circuit body 30 illustrated in FIG. 8 taken along the line IX-IX. It is a circuit diagram as one embodiment built in power semiconductor module 100 of this embodiment. FIG. 5 is a diagram illustrating a manufacturing process of the power semiconductor module 100 illustrated in FIG. 4. FIG. 5 is a diagram illustrating a part of a manufacturing process of the power semiconductor module 100 illustrated in FIG. 4. FIG. 5 is a diagram illustrating a part of a manufacturing process of the power semiconductor module 100 illustrated in FIG. 4. FIG. 5 is a cross-sectional view of the power semiconductor module 100 illustrated in FIG. 4. It is sectional drawing and front view for demonstrating the dimensional relationship between the thermal radiation members of the power semiconductor module 100 in FIG. 4, and a case frame connection part. It is sectional drawing of the power semiconductor module of the power converter device which shows Embodiment 2 of this invention. It is sectional drawing of the power semiconductor module of the power converter device which shows Embodiment 3 of this invention. It is sectional drawing of the power semiconductor module of the power converter device which shows Embodiment 4 of this invention. It is sectional drawing of the power converter device which shows Embodiment 5 of this invention.

(Embodiment 1)
[Power converter]
Hereinafter, an embodiment of a power conversion device according to the present invention will be described with reference to the drawings.

  FIG. 1 is an external perspective view as an embodiment of a power conversion device of the present invention, and FIG. 2 is an exploded perspective view of the power conversion device shown in FIG.

  The power conversion device 200 is used as a power supply device for an electric vehicle or a hybrid vehicle. Although not shown, the power conversion device 200 includes an inverter circuit connected to the motor generator, and includes a booster circuit connected to an external battery and a control circuit for controlling the whole.

  The power conversion device 200 includes a housing 201 formed of an aluminum-based metal such as aluminum or an aluminum alloy, and a bottom lid 202 fastened to the housing 201 by a fastening member (not shown). The housing 201 and the bottom cover 202 can also be formed by integral molding. An upper lid (not shown) is fastened to the upper portion of the housing 201 by a fastening member to form a sealed container.

  A peripheral wall 211 for forming a cooling flow path is formed inside the casing 201, and a cooling chamber 210 is formed by the peripheral wall 211 and the bottom lid 202.

  In the cooling chamber 210, a support member 220 having a plurality of (four in FIG. 2) side walls 221 and a plurality (three in FIG. 2) of power semiconductor modules 100 disposed between the side walls 221 are housed. . Details of the power semiconductor module 100 will be described later.

  A pair of through holes are provided on one side of the housing 201, one of the through holes is provided with an inlet pipe 203a, and the other of the through holes is provided with an outlet pipe 203b. A cooling medium such as cooling water flows into the cooling chamber 210 from the inlet pipe 203a, flows out through the cooling path between the side wall 221 of the support member 220 and each power semiconductor module 100, and flows out from the outlet pipe 203b. To do. The cooling medium flowing out from the outlet pipe 203b is cooled by a cooling device such as a radiator (not shown), and circulates again so as to flow into the cooling chamber 210 from the inlet pipe 203a.

  Cooling chamber 210 is sealed by cover member 240 with seal member 231 interposed. The cover member 240 has an opening 241 through which the DC positive electrode terminal 35a of the power semiconductor element and the like housed in each power semiconductor module 100 is inserted. The peripheral edge portion of the cover member 240 is fixed to the upper portion of the peripheral wall 211 forming the cooling chamber 210 by a fastening member (not shown).

  A capacitor module 250 including a plurality of capacitor elements 251 for smoothing DC power supplied to the inverter circuit is housed in an outer region of the cooling chamber 210 of the housing 201.

  A DC bus bar assembly 261 is disposed on the capacitor module 250 and the power semiconductor module 100. The DC bus bar assembly 261 transmits DC power between the capacitor module 250 and the power semiconductor module 100.

  Above the DC side bus bar assembly 261 and the cover member 240, a control circuit board assembly 262 including a driver circuit unit for controlling the inverter circuit is disposed.

  AC bus bar assembly 263 is connected to power semiconductor module 100 and transmits AC power. In addition, AC bus bar assembly 263 includes a current sensor.

[Cooling chamber structure]
FIG. 3 is a cross-sectional view of the cooling chamber 210 in which the power semiconductor module 100 is accommodated in the power conversion apparatus illustrated in FIG. 1. However, in FIG. 3, the peripheral wall 211 and the bottom cover 202 of the cooling chamber 210 are not shown.

  A support member 220 having four side walls 221 is installed in the cooling chamber 210. The bottom surface 220a of the support member 220 is placed on the top surface of the bottom lid 202, and is fixed to the bottom lid 202 by a fastening member (not shown).

  The side walls 221 a on both sides are formed higher than the two central side walls 221 b and are formed at substantially the same height as the power semiconductor module 100. In addition, a recess 222a for inserting a part of the power semiconductor module 100 is formed on the bottom surface 222 in the cooling flow path of the support member 220, which is generated in the cooling flow path opposite to the opening 241. It is possible to easily suppress the bypass flow. The recess 222a is not necessarily required, and may be formed of a member different from the support member 220.

  As described above, a total of three power semiconductor modules 100 are disposed in the cooling flow path formed between the side wall 221a and the central side wall 221b, or between the central side walls 221b, and are built in each power semiconductor module 100. A convex portion 242 that is inserted between the power semiconductor modules 100 is integrally formed on the cover member 240 in which the opening 241 into which the DC positive electrode terminal 35 a of the power semiconductor element 31 is inserted is formed. A concave portion 243 is formed in the middle portion of the convex portion 242. The convex portions 242 on both sides of the convex portion 242 are placed on top of the side walls 221a on both sides.

  Each power semiconductor module 100 includes a metal case 40 that houses the circuit body 30 (see FIG. 5). The metal case 40 has the flange portion 11 at the top. Each convex portion 242 provided on the cover member 240 presses each flange portion 11 toward each opening 241 side of the cover member 240. Moreover, each convex part 242 provided in the cover member 240 is provided with a concave part 243 for holding a sealing member 78 such as an O-ring. The seal member 78 seals between the power semiconductor module 100 and the cover member 240.

[Power Semiconductor Module 100]
The power semiconductor module 100 will be described with reference to FIGS.

  FIG. 4 is an external perspective view as an embodiment of the power semiconductor module 100 of the present embodiment. FIG. 5 is an external perspective view of the circuit body 30 accommodated in the power semiconductor module 100 as viewed from the front side. FIG. 6 is an external perspective view of the power semiconductor unit viewed from the back side. FIG. 7 is a perspective view of the circuit body 30 shown in FIG. 5 with the sealing resin removed. FIG. 8 is a perspective view of the circuit body 30 shown in FIG. 7 before wire bonding the electrode terminal and the power semiconductor element. Further, FIG. 9 is a sectional view taken along line IX-IX of the circuit body unit 10A shown in FIG. In addition, in FIG. 9, the code | symbol of the member of the circuit body unit 10B corresponding to the circuit body unit 10A is also attached | subjected.

  FIG. 12 is a diagram showing a part of the power module manufacturing process shown in FIG. FIG. 13 is a diagram illustrating a part of the power module manufacturing process illustrated in FIG. 4. FIG. 14 is a cross-sectional view of the power module shown in FIG.

  The power semiconductor module 100 includes a circuit body 30 (see FIGS. 5 and 6) that includes a switching element and is transfer-molded in a metal case 40 that is a CAN-type cooler. Here, the CAN type cooler is a cooler having a flat cylindrical shape having an insertion port 17 on one surface and a bottom on the other surface. The metal case 40 is formed of a member having electrical conductivity, for example, a composite material such as Cu, Cu alloy, Cu—C, or Cu—CuO, or a composite material such as Al, Al alloy, AlSiC, or Al—C. ing.

  As shown in FIG. 4, the metal case 40 includes a case frame body 41 a and a pair of heat radiation members 41 b having a plurality of heat radiation fins 42. The heat dissipating member 41b also functions as a base portion that sandwiches the circuit body 30.

  Here, each heat radiating member 41 b has heat radiating fins 42. Each heat radiating member 41 b forms the flange portion 11 on the side of the metal case 40 on the side close to the insertion port 17. The flange portion 11 is formed integrally with the heat radiating member 41b.

  The case frame 41a has a U-shape by an opening for fitting each heat radiating member 41b (see FIG. 13). In a state where each heat radiating member 41b is fitted into this opening, the side of the heat radiating member 41b where the flange portion 11 is not formed and the case frame 41a are joined at the joint 43 (see FIG. 13). As the joining, for example, FSW (friction stir welding), laser welding, brazing, liquid seal, or the like can be applied.

  By using the metal case having such a shape, even when the power semiconductor module 100 is inserted into a flow path through which a coolant such as water, oil, or organic matter flows, a seal against the coolant can be secured by the flange portion 11. The cooling medium can be prevented from entering the power semiconductor module 100 with a simple configuration.

  As shown in FIG. 3, a heat conductive insulating layer 51 is interposed between the circuit body 30 housed in the metal case 40 and the pair of heat radiating members 41b. The insulating layer 51 conducts heat generated from the circuit body 30 to the heat radiating member 41b, and is formed of a material having high thermal conductivity and high withstand voltage. For example, a thin film such as aluminum oxide (alumina) or aluminum nitride, or an insulating sheet or adhesive containing these fine powders can be used. As will be described later, conductor plates 33 to 36 (see FIGS. 5, 6, and 7) for soldering the power semiconductor element are exposed on both the front and back surfaces of the circuit body 30. 33-36 and the heat radiating member 41b are couple | bonded so that heat conduction is possible.

[Circuit body 30]
As illustrated in FIG. 7 and the like, the AC output side conductor plate 33 and the DC negative electrode side conductor plate 34 are arranged on the same plane on the surface side of the circuit body 30. As illustrated in FIG. 5, the first sealing resin 6 exposes the upper surface 33 b of the conductor plate 33 and the upper surface 34 b of the conductor plate 34 on the surface side of the circuit body 30, and surrounds the conductor plates 33 and 34. The whole is covered. The surface of the first sealing resin 6 is flush with the upper surface 33 b of the conductor plate 33 and the upper surface 34 b of the conductor plate 34.

  Similarly, as illustrated in FIGS. 6 and 9, the DC positive electrode side conductor plate 35 and the AC output side conductor plate 36 are arranged on the same plane on the back surface side of the circuit body 30. The circuit body 30 includes a first sealing resin 6 and a second sealing resin 15 (see FIG. 3) provided on the outer periphery of the first sealing resin 6.

  As shown in FIG. 6, the first sealing resin 6 exposes the upper surface 35 b of the conductor plate 35 and the upper surface 36 b of the conductor plate 36 on the back side of the circuit body 30, and surrounds the conductor plates 35 and 36. The whole is covered. The surface of the first sealing resin 6 is flush with the upper surface 35 b of the conductor plate 35 and the upper surface 36 b of the conductor plate 36. The conductor plates 33 to 36 are made of, for example, copper, copper alloy, aluminum, aluminum alloy, or the like.

  The power semiconductor element 31U and the diode 32U shown in FIGS. 7 to 9 are fixed between the conductor plate 35 and the conductor plate 33 via the solder material 61 on one side and the solder material 62 on the other side. Yes. Similarly, the power semiconductor element 31L and the diode 32L are fixed between the conductor plate 36 and the conductor plate 34 via solder materials 61 and 62 on one side and the other side.

  FIG. 10 is a circuit diagram showing an embodiment of a circuit built in the circuit body 30. In the following description, this circuit diagram is also referred to.

  The power semiconductor element 31U, the diode 32U, the power semiconductor element 31L, and the diode 32L constitute the upper and lower arm series circuit 121.

  A DC positive terminal 35a is formed on the DC positive conductor plate 35, and an AC output terminal 36a is formed on the AC output conductor plate 36 (see FIG. 7 and the like). A power semiconductor element 31U and a diode 32U are bonded to the conductor plate 35 on the DC positive electrode side to form an upper arm circuit. The input / output portion of the power semiconductor element 31U has a plurality of signal terminals 24U and wires 26U (see FIG. 7).

  A power semiconductor element 31L and a diode 32L (see FIG. 10) are bonded to the AC output side conductor plate 36 to form a lower arm circuit. The input / output portion of the power semiconductor element 31L has a plurality of signal terminals. 24L is connected by a wire 26L (see FIG. 7).

  7 and 8, the conductor plate 35, the conductor plate 33, the DC positive terminal 35a, the signal terminal 24U, the power semiconductor element 31U, and the diode 32U constitute a circuit body unit 10A. Further, the conductor plate 36, the conductor plate 34, the AC output terminal 36a, the signal terminal 24L, the power semiconductor element 31L, and the diode 32L constitute a circuit body unit 10B.

  As shown in FIG. 7, a lead 38 is integrally formed on the conductor plate 33. The tip of the lead 38 is connected to the conductor plate 36, thereby connecting the circuit body units 10 </ b> A and 10 </ b> B.

  The circuit body 30 seals the circuit body units 10A and 10B with the first sealing resin 6, and the outer periphery of the first sealing resin 6 includes a DC positive terminal 35a, a signal terminal 24U, an AC output terminal 36a, and a signal terminal 24L. It has a structure sealed with the second sealing resin 15 so as to be exposed. The circuit body unit 10B includes a temperature sensor 8 (see FIG. 7) for detecting the temperature of the conductor plate 36, that is, the temperature of the power semiconductor element 31L.

The DC negative terminal 34 a is connected to the conductor plate 34 and protrudes from the first sealing resin 6.
[Production Method of Power Semiconductor Module 100]
In order to manufacture the power semiconductor module 100, as shown in FIGS. 5 and 6, the circuit body units 10 </ b> A and 10 </ b> B are sealed with the first sealing resin 6 to form the circuit body 30. Both front and back surfaces of the circuit body 30, that is, one surface where the upper surface 33b of the conductor plate 33 and the upper surface 34b of the conductor plate 34 are exposed, and the other surface where the upper surface 35b of the conductor plate 35 and the upper surface 36b of the conductor plate 36 are exposed. Then, the insulating layer 51 is formed. The insulating layer 51 can be formed by, for example, a method of attaching an insulating sheet or a method of applying an insulating adhesive.

  Further, as shown in FIG. 11, heat radiating members (heat radiating portions) 41 b having a plurality of heat radiating fins 42 are respectively formed on the upper surfaces 51 b of the insulating layers 51 on both sides. For example, the circuit body 30 is pressurized from outside the pair of heat radiation members 41b. By this pressurization, the circuit body 30 and the heat radiating members 41 b on the front and back sides are bonded via the insulating layer 51. The pressurization may be performed by bonding a pair of heat radiating members 41b at a time or by bonding the heat radiating members 41b one by one.

  After that, the intermediate unit 70 (see FIG. 12) integrated with the circuit body 30 through the pair of heat radiation members 41b and the insulating layer 51 is fitted into the U-shaped case frame body 41a. The case frame body 41a and the side where each flange member 11b is not formed with the flange portion 11 are joined (see FIG. 13). As the joining, for example, FSW (friction stir welding), laser welding, brazing, liquid seal or the like can be applied.

  As shown in FIG. 13, a convex portion 71 is formed on the side of the case frame 41a that connects to the heat radiating member 41b, and the heat radiating member 41b is in contact with the side surfaces 71a and 71b of the convex portion 71. Then, the case frame body 41a and each heat radiation member 41b are connected.

  As shown in FIG. 14, the heat radiating member 41 b is formed with a recess 74 on the side where the circuit body 30 is disposed. The recess 74 is formed so as to surround the region where the heat radiation fin 42 is formed. And since the recessed part 74 is formed so that it may be thinner than the area | region in which the radiation fin 42 was formed, or it was formed so that rigidity might become small, it is easier to deform | transform than the area | region in which the radiation fin 42 was formed. That is, the concave portion 74 functions as a deforming portion.

  For example, as shown in FIG. 14, the plate thickness of the recess 74 can be made thinner than the plate thickness of the fin base portion. As shown in FIG. 11, by forming the recess 74 on the circuit body 30 side of the heat dissipation member 41b, a thin portion can be formed.

  Due to the presence of the deformed portion around the bonding portion between the insulating layer 51 and the circuit body 30, due to the temperature change such as the temperature cycle, the heat radiating member 41 b is forced outward by the expansion of the metal case 40. Even when receiving heat, the tensile stress generated on the connection surface between the heat dissipation member 41b and the insulating layer 51 can be reduced. Therefore, the interface between the insulating layer 51 and the heat dissipation member 41b, or the insulating layer 51 and the conductor plate 33, the conductor It is possible to suppress separation at the interface with the plate 34.

  It is sectional drawing and front view for demonstrating the dimensional relationship of the connection part between the thermal radiation member 41b of the power semiconductor module 100 in FIG. 4, and the case frame 41a.

  The distance X1 between the side surfaces 71a and 71b of the convex portion 71 of the case frame 41a is smaller than the distance X2 between the connection portions 72 of the pair of heat radiation members 41b formed so as to sandwich the circuit body 30, that is, X1 <X2. It is formed to become.

  When connecting the case frame 41a and the heat radiating member 41b, the connecting portion 72 of the heat radiating member 41b is connected while being pressurized from the outside of the module, so that a compressive force is applied to the inside of the power semiconductor module 100, and insulation A compressive stress remains in the layer 51 in the thickness direction. Thereby, even when a repeated thermal load is applied, the generation of tensile stress in the peeling direction can be suppressed, and the effect of suppressing the separation of the insulating layer 51 can be obtained.

  Here, by providing the concave portion 74 having a lower rigidity than the region between the region where the fin of the heat radiation member 41b is formed and the connection portion 72, when the connection portion 72 is pressed and connected to the case frame body 41a, There is also an effect that it is possible to prevent the central portion of the heat radiating member 41b from being lifted when pressurized from the outside of the metal case 40. In addition to the recess 74, an intermediate portion having a rigidity lower than that of the region where the fins of the heat radiation member 41b are formed may be provided.

  In the present embodiment, the flange portion 11 is integrally formed on the side close to the opening of the metal case 40 on the heat radiating member 41 b having the plurality of heat radiating fins 42. As shown in FIG. 3, the opening 241 of the cover member 240 that forms the flow path is closed by a part of the case frame 41 a and the flange 11. That is, the flange part 11 of one heat radiating member 41 functions as a first seal part, and the flange part 11 of the other heat radiating member 41 functions as a second seal part.

  Thereby, since it is not necessary to join between the flange part 11 and the radiation fin 42, the distance between the flange part 11 and the radiation fin 42 can be shortened, and a bypass is generated in a gap formed between the flange part 11 and the radiation fin 42. The flow can be suppressed. As a result, the cooling water sufficiently flows through the radiation fins 42, so that the heat transfer coefficient of the radiation fins 42 can be improved, the heat radiation performance of the power semiconductor module 100 is improved, and a highly reliable power conversion device can be realized. .

  Further, in the method of manufacturing the power semiconductor module 100 according to the present embodiment shown in FIGS. 11 to 15, after the circuit body 30 is formed, the insulating layers 51 are formed on both the front and back surfaces of the circuit body 30, and the both surfaces are insulated. A plurality of heat dissipating members 41 b are formed on the upper surface 51 b of the layer 51. After the intermediate unit 70 integrated with the circuit body 30 is formed through the pair of heat radiating members 41b and the insulating layer 51 as described above, the intermediate unit 70 is fitted into the U-shaped case frame body 41a. The body 41a and the side where the flange portion 11 of each heat radiation member 41b is not formed are joined. Thereby, the power semiconductor module 100 in which the semiconductor module 30 is housed in the metal case 40 is formed.

  Thus, after joining the heat radiation member 41b and the circuit body 30 via the insulating layer 51, the case frame body 41a is joined to form the metal case 40, thereby joining the heat radiation member 41b and the case frame body 41a. Then, after forming the metal case 40, the circuit body 30 having the insulating layers 51 formed on both sides is inserted into the metal case 40, and the circuit body 30 is clamped from the outside of the pair of heat radiation members 41b. It is possible to suppress the peeling of the insulating layer 51 caused by the springback after pressing, which is a concern when the circuit body 30 and the heat radiating member 41b on the front and back sides are bonded via the insulating layer 51 by applying pressure. .

In the present embodiment, the case where the flange portion 11 is not provided with a process such as an O-ring groove is illustrated, but an O-ring groove or the like may be provided as necessary. As the sealing material, an O-ring, a liquid gasket, or the like can be used.
(Embodiment 2)
FIG. 16 shows a modification of the power module of the power conversion device shown in FIG. 14, and the same reference numerals as those in FIG. 14 indicate the same components, and thus detailed description thereof is omitted.

  In the modification shown in FIG. 16, in the heat radiating member 41b forming the metal case 40, the surface 11b and the fin forming surface 42a of the heat radiating member 41b are formed on the same surface, and the plate thickness of the flange portion 11 and the heat radiating portion The thickness of 41c is the same.

Thereby, since the structure of the heat radiating member 41b can be simplified, there exists an advantage that the cost for a process can be reduced.
(Embodiment 3)
FIG. 17 shows still another modified example of the power semiconductor module of the power conversion device shown in FIG. 14, and the same reference numerals as those in FIG. 14 indicate the same components, and thus detailed description thereof is omitted.
In the modification shown in FIG. 17, in the heat radiating member 41b forming the metal case 40, the joint 73 connected to the case frame 41a has a convex shape protruding outward. That is, the thickness of the joint portion 73 is larger than the thickness of the intermediate portion that connects the region where the radiation fins 42 are formed and the joint portion 73.

As a result, when the joint 73 and the case frame 41a are joined by FSW, the rigidity of the connection is ensured and the connection is facilitated, and the heat generated at the tip of the tool is transferred to the connection interface between the insulating sheet 51 and the module. This has the effect of suppressing
(Embodiment 4)
FIG. 18 shows still another modified example of the power module power semiconductor module of the power conversion device shown in FIG. 14, and the same reference numerals as those in FIG. To do.

  In the modification shown in FIG. 18, the connecting portion 76 of the heat radiating member 41b is connected to the connecting portion 75 of the case frame 41a at the joint where the heat radiating member 41b forming the metal case 40 and the case frame 41a are connected. Is on the inside.

That is, the case frame 41a has a connection portion 75 that overlaps with the connection portion 76 when viewed from the direction perpendicular to the surface on which the heat dissipation fins 42 of the heat dissipation member 41b are formed. Further, the connecting portion 76 is formed closer to the circuit body 30 than the connecting portion 75 and is connected to the connecting portion 75. Even in this case, the same effect as that of the power module shown in FIG. 14 can be obtained.
(Embodiment 5)
FIG. 19 shows a modification of the power conversion device shown in FIG. 3, and the same reference numerals as those in FIG. 3 indicate the same components, and thus detailed description thereof is omitted.

  In the modification shown in FIG. 19, the space between the cover member 240 and the seal portion 11c of the power semiconductor module 100 is sealed with a resin material 81 such as a liquid seal. By sealing with a resin material such as a liquid seal, there is an advantage that it is not necessary to form an O-ring groove in the seal portion 11c of the power semiconductor module 100 or the cover member 240, and the cost can be reduced.

Although not necessarily required near the root of the convex portion 242 formed between the power semiconductor modules 100 formed on the cover member 240, a liquid seal is formed in the opening of the power semiconductor module 100 by forming the concave portion 80. The effect which prevents going into a part is acquired.
In the said embodiment, it illustrated as a structure which interposed the insulating layer 51 between the circuit body 30 and the thermal radiation member 41b. However, the insulating layer 51 is not necessarily required as long as the power semiconductor module 100 has a structure in which the heat dissipation member 41b and the circuit body 30 are in close contact with each other so as to conduct heat.

  The structure of the housing 201 of the power conversion device 200 and the layout of the electronic components housed in the housing 201 shown in the above embodiment are shown as examples, and can be applied with various modifications. .

  In the embodiment described above, the shape of the radiation fins 42 is pin fins, but other shapes such as straight fins and corrugated fins may be used.

  In the above-described embodiment, the in-vehicle power conversion device mounted on the electric vehicle or the hybrid vehicle has been described as an example. However, if the power conversion device has a cooling structure in which the power module is immersed in the cooling medium, the present invention The invention can be applied as well.

    In addition, the present invention is not limited to the above-described embodiment, and various modifications can be applied within the scope of the gist of the present invention.

6 ... 1st sealing resin, 8 ... Temperature sensor, 10A ... Circuit body unit, 10B ... Circuit body unit, 11 ... Flange part, 11b ... Surface, 11c ... Seal part, 15 ... 2nd sealing resin, 17 ... Insertion 24L ... signal terminal, 24U ... signal terminal, 26L ... wire, 26U ... wire, 30 ... circuit body, 31 ... power semiconductor element, 31U ... power semiconductor element, 31L ... power semiconductor element, 32U ... diode, 32L ... diode 33 ... conductor plate 33b ... upper surface 34 ... conductor plate 34a ... DC negative electrode terminal 34b ... upper surface 35 ... conductor plate 35a ... DC positive electrode terminal 35b ... upper surface 36 ... conductor plate 36a ... AC output terminal , 36b ... upper surface, 38 ... lead, 40 ... metal case, 41a ... case frame, 41b ... heat radiating member, 42 ... heat radiating fin, 43 ... junction, 51 ... insulating layer, 51b Upper surface, 61 ... solder material, 62 ... solder material, 70 ... intermediate unit, 71 ... convex portion, 71a ... side surface, 71b ... side surface, 72 ... connecting portion, 73 ... joining portion, 74 ... concave portion, 75 ... connecting portion, 76 DESCRIPTION OF SYMBOLS ... Connection part, 78 ... Seal member, 80 ... Recess, 81 ... Resin material, 100 ... Power semiconductor module, 121 ... Upper and lower arm series circuit, 200 ... Power converter, 201 ... Housing, 202 ... Bottom cover, 203a ... Inlet Piping for piping, 203b outlet piping, 210 ... cooling chamber, 211 ... peripheral wall, 220 ... support member, 220a ... bottom surface, 221 ... side wall, 221a ... side wall on both sides, 221b ... central side wall, 222 ... in cooling channel Bottom surface, 222a ... concave portion, 231 ... seal member, 240 ... cover member, 241 ... opening, 242 ... convex portion, 243 ... concave portion, 250 ... capacitor module, 251 ... capacitor element, 61 ... DC-side bus bar assembly, 262 ... control circuit board assembly, 263 ... AC side bus bar assembly, X1 ... distance, X2 ... distance

Claims (8)

A power semiconductor module;
An opening for inserting the power semiconductor module and a flow path forming body for forming a flow path connected to the opening,
The power semiconductor module is
A circuit body having a power semiconductor element;
A first base portion and a second base portion disposed to face each other so as to sandwich the circuit body;
A frame body connected to the first base portion and the second base portion,
The first base portion includes a first fin and a first seal portion that closes a part of the opening on a side near the opening,
The second base portion includes a second fin and a second seal portion that closes a part of the opening on a side close to the opening,
The frame is connected to a side of the first base part where the first seal part is not formed, and is connected to a side of the second base part where the second seal part is not formed,
The opening is a power converter that is closed by a part of the frame, the first seal portion, and the second seal portion. The power conversion device according to claim 1,
The thickness of the said 1st seal | sticker part is a power converter device larger than the thickness of the said 1st base part. The power conversion device according to claim 1,
The power conversion device in which the thickness of the first seal portion and the thickness of the first base portion are the same. The power conversion device according to any one of claims 1 to 3,
Between the area | region in which the said 1st fin of the said 1st base part is formed, and the said 1st seal part, the intermediate part whose rigidity is smaller than the said 1st base part and the said 1st seal part is provided. Power conversion device. The power conversion device according to any one of claims 1 to 3,
An intermediate portion having a thickness smaller than that of the first base portion and the first seal portion is provided between the region where the first fin of the first base portion is formed and the first seal portion. Power conversion device. The power conversion device according to any one of claims 1 to 5,
The frame body forms the protruding portion protruding toward the space between the first base portion and the second base portion,
The said circuit body is a power converter device formed so that the distance between the said 1st base part and the said 2nd base part may become larger than the thickness of the said protrusion part. The power conversion device according to any one of claims 1 to 6,
The first base portion includes a connection portion with the frame body, a region where the first fin is formed, and an intermediate portion that connects the connection portion,
The thickness of the said connection part is a power converter device formed more largely than the thickness of the said intermediate part. The power conversion device according to any one of claims 1 to 5,
The first base portion has a first connection portion with the frame,
The frame body has a second connection portion that overlaps the first connection portion when viewed from a direction perpendicular to the formation surface of the first fin of the first base portion,
The first connection unit is a power conversion device that is formed closer to the circuit body than the second connection unit and connected to the second connection unit.