JP2016031974A - Substrate processing method, substrate product manufacturing method and substrate processing apparatus - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing method which can be performed at low cost.SOLUTION: A substrate processing method has a support process of bonding a support substrate 20 to a processed substrate 10 and a process of delaminating the support substrate 20. The support process includes: a process of forming a protection layer 13 on a surface of the processed substrate 10; a process of forming on or under a surface of the support substrate 20, an adhesion layer 21 having groove-shaped recesses 22 having closed ends; a process of opposing the processed substrate 10 where the protection layer 13 is formed and the support substrate 20 where the adhesion layer 21 is formed, and contacting the protection layer 13 and the adhesion layer 21 to form a bonded substrate 30 by bonding the processed substrate 10 and the support substrate 20 via the protection layer 13 and the adhesion layer 21. The delamination process includes a process of immersing the bonded substrate 30 in a stripping solution to osmose the stripping solution from a periphery 23 of the adhesion layer 21 to the groove-shaped recesses 22.SELECTED DRAWING: Figure 2

Description

  The present invention relates to a substrate processing method using a support substrate, a method for manufacturing a substrate product, and a substrate processing apparatus.

  In the manufacturing process of a semiconductor device and MEMS (Micro Electro Mechanical Systems), when a thin substrate having a thickness of less than 300 μm is processed, the mechanical strength of the substrate is lowered. Further, the surface side of a thin processing substrate having a thickness of less than 300 μm with a step of 0.5 μm or more formed on the surface is bonded with a support substrate, and the back surface side of the processing substrate is attached to a semiconductor processing apparatus (particularly a dry etching apparatus). In this case, it becomes difficult to cool the substrate inside the vacuum apparatus due to the high step in the bonding portion. As a result, the resist disappears or burns. For this reason, it is required to support the substrate at a lower cost.

  As an example, a high density by a three-dimensional LSI using a through silicon via (TSV) technology is rapidly attracting attention. One of the most important technologies in the manufacture of stacked LSIs using TSV is thin wafer handling. This is not simply a technique for transporting thin wafers. Polishing is a matter of course, and its function must be maintained without problems in all device manufacturing processes such as film formation, photolithography, and etching. Until now, tape-type wafer support has been common, but with the increasing need for TSV technology, hard support technology using a glass substrate or the like is indispensable. In general, a method of attaching a wafer to a support substrate using an adhesive or the like is used.

For example, in Patent Document 1, a glass substrate is used as a support substrate, the semiconductor substrate and the support substrate are bonded via a resin layer containing polyimide, and the resin layer is irradiated with laser light through the support substrate when the support substrate is peeled off. Thus, a method for decomposing the resin layer is described.
Other technologies include ZoneBOND (registered trademark) shown in Non-Patent Document 1, and Zero Newton (registered trademark) shown in Non-Patent Document 2. In the technique shown in Non-Patent Document 1, adhesives having different adhesive forces are used for the edge portion and the center portion of the substrate. In the technique shown in Non-Patent Document 2, a large number of holes are formed in a glass support substrate, and a solvent that dissolves the temporary fixing material between the substrates can be easily injected.

JP2013-42052A

“EVG (R) ZoneBOND (R) Process Modules”, EVGroup, [online], Internet <URL: http: // www. evgroup. com / ja / products / bonding / temporary_bonding / zonebond >> “300 mm silicon wafer mass production system“ TWM12000 series / TWR12000 series ”corresponding to wafer handling system“ Zero Newton ”for through electrode formation”, Tokyo Ohka Kogyo Co., Ltd., [online], Internet <URL: http: // tok- pr.com/201007_WEB_exhibition/common/papers/Manufacturing%20device%20for%20March%20edition%20TSV%20in%202009%20electronic%20material.pdf>

In the conventional hard support technology, a support substrate, an adhesive, a device, and the like are special products or dedicated products, and the cost is high. For example, in the case of the method described in Patent Document 1, an expensive polyimide is used as an adhesive, and a high-cost laser beam irradiation device is required at the time of peeling. Also,
A glass substrate that transmits laser is indispensable as a support substrate, and a silicon substrate cannot be applied to the support substrate. There is also a method that uses a wax agent for attaching the support substrate and isopropyl alcohol (IPA) for peeling, but since the wax contains various chemical substances, contamination (contamination) removal after the treatment is eliminated. Since it is necessary and the wax and the pasting apparatus are exclusive products, the cost becomes high.

  This invention is made | formed in view of the said situation, and makes it a subject to provide the substrate processing method which can be implemented at low cost, the manufacturing method of a substrate product, and a substrate processing apparatus.

In order to solve the above-mentioned problem, the present invention is a substrate processing method comprising a support step of bonding a support substrate to a substrate to be processed, and a peeling step of peeling the support substrate from the substrate to be processed. A step of forming a protective layer on the surface of the substrate to be processed, a step of forming an adhesive layer having a groove-shaped recess with a closed end on or below the surface of the support substrate, and the protective layer The substrate to be processed and the support substrate on which the adhesive layer is formed are opposed to each other, the protective layer and the adhesive layer are brought into contact with each other, and the substrate to be processed is interposed via the protective layer and the adhesive layer. And bonding the support substrate to form a bonded substrate, and the peeling step immerses the bonded substrate in a peeling solution, and the peeling solution is removed from the outer peripheral portion of the adhesive layer. Previous To provide a substrate processing method characterized by comprising the step of infiltrating the groove-like recess.
According to this, the stripping solution penetrates from the outer peripheral portion of the adhesive layer into the groove-shaped concave portion, so that the stripping becomes easy. Since it is not necessary to use a special product or a dedicated product, support and peeling can be performed at a low cost.

The bonding step may include a step of removing gas from between the substrate to be processed and the support substrate in an atmosphere having a pressure lower than atmospheric pressure.
According to this, since the inside of the groove-like recess is in a vacuum or a reduced pressure state as a result of the process of removing the gas, pressure is applied in the direction in which the substrate to be processed and the support substrate face each other when the bonded substrate is used. The substrate is difficult to peel off.

The adhesive layer may have an independent recess at a position apart from the outer peripheral portion and the groove-like recess.
According to this, in addition to the groove-shaped concave portion, the inside of the independent concave portion is in a vacuum or a reduced pressure state. Therefore, when the bonded substrate is used, the pressure applied to the substrate to be processed and the support substrate is increased. It becomes difficult to peel.

In the substrate processing method, the protective layer and the adhesive layer may be made of a resist, and the joining step may include a step of mixing the resist of the protective layer and the resist of the adhesive layer by heating.
According to this, even when an existing resist is used, the substrate to be processed and the support substrate can be firmly bonded to each other.

In the bonding step, the substrate to be processed and the support substrate are made to face each other, the protective layer and the adhesive layer are brought into contact with each other, and the resist of the protective layer and the resist of the adhesive layer are heated. Before the step of mixing, a step of fixing at least side surfaces of the substrate to be processed and the support substrate with an adhesive member can be included.
According to this, it is possible to prevent positional deviation between the substrate to be processed and the support substrate before the bonding step by mixing the resists is completed.

The peeling step may include a step of baking the bonding substrate before immersing the bonding substrate in the peeling solution.
According to this, even when foreign matters such as organic substances, solvents, liquids, etc. adhere to the surface of the bonding substrate (particularly the adhesive layer), the foreign matters are volatilized and decomposed by baking, and the foreign matters can be removed or reduced. Therefore, when the bonding substrate is immersed in a peeling solution, the peeling solution easily penetrates into the adhesive layer, and the peeling of the adhesive layer can be promoted.

In the support step, the bonding substrate is prepared so that the outer periphery of the substrate to be processed and the support substrate has an unbonded portion that does not include the protective layer and the adhesive layer, and the peeling step includes the unbonded portion. A step of inserting a release plate into the substrate.
According to this, when the adhesive layer is peeled off, the peeling plate enters between the substrate to be processed and the support substrate, so that reattachment can be suppressed and peeling can be promoted.

The support substrate may be formed of a silicon substrate or a glass substrate, and may not have a hole penetrating the support substrate.
According to this, since a general-purpose support substrate can be used, it can be implemented at a lower cost.

In order to solve the above problems, the present invention includes a support step of bonding a support substrate to a substrate to be processed, a step of processing the substrate to be processed in a state where the support substrate is bonded, and a substrate product, A substrate product manufacturing method including a peeling step of peeling the support substrate from a substrate to be processed, wherein the support step and the peeling step are performed by the substrate processing method. provide.
According to this, when processing a to-be-processed substrate and producing a substrate product, a to-be-processed substrate can be reinforced with a support substrate. Moreover, support and peeling can be performed at low cost.

In order to solve the above-mentioned problems, the present invention provides a substrate processing apparatus for performing the substrate processing method, comprising: means for forming a protective layer on the surface of the substrate to be processed; and on or below the surface of the support substrate. The means for forming an adhesive layer having a groove-shaped recess having a closed end, the substrate to be processed on which the protective layer is formed, and the support substrate on which the adhesive layer is formed are opposed to each other to protect the protective layer. A bonding means for producing a bonded substrate by bringing a substrate into contact with the adhesive layer and bonding the substrate to be processed and the support substrate through the protective layer and the adhesive layer; A substrate processing apparatus comprising: a stripping unit that immerses the stripping liquid in an outer peripheral portion of the adhesive layer into the groove-shaped recess to separate the support substrate from the substrate to be processed. provide.
According to this, support and peeling can be performed at low cost using a general-purpose substrate processing apparatus used in a semiconductor process or the like.

The means for forming the adhesive layer may have a mask pattern for patterning the groove-like recesses by photolithography.
According to this, it is possible to carry out precise groove-shaped recess pattern formation at a low cost according to the design.

The substrate processing apparatus may further include processing means for processing the substrate to be processed in a state where the support substrate is bonded to the bonded substrate.
According to this, the above substrate product can be manufactured at low cost by the substrate processing apparatus.

It is sectional drawing explaining the process of bonding a support substrate to a to-be-processed substrate. It is explanatory drawing which concerns on a 1st example, Comprising: (a) is a top view of a support substrate, (b) is sectional drawing of a joining board | substrate. It is explanatory drawing which concerns on a 2nd example, Comprising: (a) is a top view of a support substrate, (b) is sectional drawing of a joining board | substrate. It is a photograph which shows an example of a bonded substrate. It is a perspective view which shows an example which applies a peeling board to a joining board | substrate. It is a partial expanded sectional view explaining the effect | action of the peeling plate with respect to a joining board | substrate. It is a top view which shows an example of the pattern of the contact bonding layer which has an independent recessed part. It is sectional drawing which shows an example of the joining board | substrate applied to vacuum heating sticking.

  Hereinafter, based on a preferred embodiment, the present invention will be described with reference to the drawings. In these drawings, in order to make each configuration easy to understand, the actual structure may be different from the scale and number in each structure.

  A substrate 10 to be processed shown in FIG. 1 has a protective layer 13 on a surface 10a which is one side thereof. The substrate to be processed 10 is not particularly limited, but is a semiconductor substrate such as a silicon substrate, a glass substrate, a ceramic substrate, an insulating substrate, a metal substrate, or the like. A structure portion 11 such as an element may be provided on the surface 10a of the substrate 10 to be processed. Further, on the back surface 10b opposite to the front surface 10a, a structure portion such as a wiring terminal and a resist pattern 12 that protects the structure portion may be provided. The element on the front surface 10 a and the wiring terminal on the back surface 10 b side may be electrically connected by a through via that penetrates the substrate 10 to be processed.

  The protective layer 13 covers the structure portion 11 of the surface 10a. Examples of the material of the protective layer 13 include organic materials such as a resist, a resin, and an adhesive. Examples of the resist include TMMR (registered trademark) series which is a liquid resist of Tokyo Ohka Kogyo Co., Ltd. When the protective layer 13 is made of one kind of material (composition), the adhesive layer forming step is simplified and the cost is reduced. The protective layer 13 may be a single layer that covers substantially the entire surface of the substrate 10 to be processed.

  As described above, when the thickness of the substrate to be processed 10 is as thin as less than 300 μm, or when the step (height) due to the structure portion 12 on the back surface 10b is 0.5 μm or more, the support substrate 20 May be supported together. The support substrate 20 is used for hard support of the substrate to be processed 10 when the substrate to be processed 10 is processed. An adhesive layer 21 is formed on the surface 20 a which is one side of the support substrate 20. Specific examples of the support substrate 20 include a silicon substrate and a glass substrate. The support substrate 20 may be a general-purpose support substrate that does not have a hole penetrating the support substrate 20. Each of the front surface 20a and the back surface 20b of the support substrate 20 may be flat or uneven.

  The support substrate 20 can be peeled from the substrate to be processed 10 after the support process is completed. An arbitrary processing step can be provided between the support step of attaching the support substrate 20 to the substrate 10 to be processed and the peeling step of peeling the support substrate 20 from the substrate 10 to be processed.

The processing step may be a step of processing the substrate to be processed 10 in a state where the support substrate 20 is bonded. The processing step is not particularly limited as long as it changes the substrate 10 to be processed or its accessories. Examples of processing include etching, plating, vapor deposition, polishing, device mounting, film formation, patterning, firing, application of an electromagnetic field, and the like. The process temperature of the treatment step is preferably a low temperature process of about 300 ° C. or lower when an organic substance such as a resist is used. The processing step can include two or more steps. After the processing step, the substrate product is obtained by peeling the support substrate 20 from the substrate 10 to be processed.
In the present specification, the substrate product means any article obtained as a result of a processing step on the substrate 10 to be processed or its accessories, and includes a semi-finished product. The present embodiment is also applicable to substrate products such as MEMS, power devices, and high-density mounting devices.

  The processing step may be one that does not cause a change in the substrate 10 to be processed and its accessories (structure portions 11, 12, etc.). Such processing includes measurement and inspection. By processing the substrate to be processed 10 in a state where the support substrate 20 is bonded, characteristics such as strength, heat dissipation, and thermal conductivity of the substrate to be processed 10 can be compensated. After the processing is completed, non-destructive processing is possible by peeling the support substrate 20 from the substrate 10 to be processed.

The support process of this embodiment includes at least the following processes (1) to (3).
(1) A step of forming the protective layer 13 on the surface 10a of the substrate to be processed 10 (protective layer forming step).
(2) A step of forming the adhesive layer 21 on the surface 20a of the support substrate 20 (adhesive layer forming step).
(3) The substrate 10 to be processed on which the protective layer 13 is formed and the support substrate 20 on which the adhesive layer 21 is formed are opposed to each other, and the protective layer 13 and the adhesive layer 21 are brought into contact with each other. The process of bonding the to-be-processed substrate 10 and the support substrate 20 through (bonding process).

  In the support process, the order of the protective layer forming process and the adhesive layer forming process is arbitrary, and can be performed in parallel. In order to protect the structure portion 12 on the back surface 10b side of the substrate 10 to be processed, it is possible to add a step of forming a protective layer (not shown) on the back surface 10b of the substrate 10 to be processed.

  FIG. 2A is a plan view illustrating an example of the support substrate 20, and FIG. 2B is a cross-sectional view illustrating an example of the bonding substrate 30. In the cross-sectional view, the number of the groove-like recesses 22 is reduced compared to the plan view in order to clearly show the existence of the groove-like recesses 22.

  In the adhesive layer forming step, for example, a groove-like recess 22 is formed in the adhesive layer 21 as shown in FIG. Two or more groove-like recesses 22 may be provided. Further, two or more groove-shaped recesses 22 may intersect each other. In the illustrated example, the circular support substrate 20 is provided with a plurality of groove-shaped recesses 22 a in the radial direction and a plurality of groove-shaped recesses 22 b in the circumferential direction as the groove-shaped recesses 22. The end of the groove-shaped recess 22 is closed without reaching the outer peripheral portion 23 of the adhesive layer 21. Further, as shown in FIG. 2B, the groove-shaped recess 22 opens in a direction (upward or downward) away from the surface 20 a (upper surface or lower surface) of the support substrate 20. Further, a groove-like recess 22 may be formed on the support substrate 20 before the adhesive layer 21 is formed.

  Examples of the material of the adhesive layer 21 include organic materials such as a resist, a resin, and an adhesive. Examples of the resist include TMMR (registered trademark) series which is a liquid resist of Tokyo Ohka Kogyo Co., Ltd. When the adhesive layer 21 is made of one kind of material (composition), the adhesive layer forming step is simplified and the cost is reduced. The adhesive layer 21 may be a single layer that covers substantially the entire surface of the support substrate 20.

  2B is a composite substrate in which the substrate to be processed 10 and the support substrate 20 are bonded to each other through the protective layer 13 and the adhesive layer 21 through a bonding process. In the bonded substrate 30, the protective layer 13 and the adhesive layer 21 adhere to each other, whereby the groove-like recess 22 b becomes a closed space.

  The material of the protective layer 13 and the material of the adhesive layer 21 may be the same or different. It is preferable that the protective layer 13 and the adhesive layer 21 are made of the same resist because the adhesion is improved in the heating and bonding process described later.

  When the protective layer 13 and the adhesive layer 21 are made of resist, in a preferred embodiment, the following steps (3a) to (3c) are performed as the bonding step.

(3a) The target substrate 10 on which the protective layer 13 is formed and the support substrate 20 on which the adhesive layer 21 is formed are opposed to each other, and the protective layer 13 and the adhesive layer 21 are brought into contact with each other (contact process).
(3b) At least the side surfaces of the substrate to be processed 10 and the support substrate 20 are fixed by the adhesive member 31 (temporary fixing step).
(3c) The resist of the protective layer 13 and the resist of the adhesive layer 21 are mixed by heating (heating adhesive process).

  According to this bonding method, when the resist is cooled, the protective layer 13 and the adhesive layer 21 are bonded to each other, and the bonded substrate 30 is obtained. As a result, even when an existing resist is used, the substrate to be processed 10 and the support substrate 20 can be firmly bonded to each other. Further, by performing the temporary fixing step, it is possible to prevent the positional displacement between the substrate to be processed 10 and the support substrate 20 before and during the heat bonding step. The adhesive member 31 is preferably an adhesive member having heat resistance that can withstand the heat-bonding process. The pressure-sensitive adhesive member does not require heating and can be bonded by contact (pressure) even at room temperature (pressure-sensitive bonding). Examples of the pressure-sensitive adhesive member include a pressure-sensitive adhesive tape using a polyimide such as Kapton (registered trademark) as a base material and silicone (organosilicon polymer) or the like as a pressure-sensitive adhesive. In the bonding method using the heat bonding process, bonding is possible even if the temporary fixing process is omitted. As a method for preventing the positional deviation between the substrates, a method of surrounding the end surface of the substrate with a wall or pressurizing the back surfaces of the substrates in addition to temporary fixing using the adhesive member 31 is conceivable.

  The bonding step can be performed under normal pressure (atmospheric pressure), but is preferably performed under a pressure lower than atmospheric pressure, for example, in a vacuum or a reduced pressure atmosphere (hereinafter referred to as “in a vacuum or under reduced pressure”). . When the bonding step is performed in vacuum or under reduced pressure, the gas is removed from between the substrate to be processed 10 and the support substrate 20. According to this, since the inside of the groove-like recess 22 is in a vacuum or a reduced pressure state, when the bonding substrate 30 is used, atmospheric pressure is applied in the direction in which the substrate to be processed 10 and the support substrate 20 face each other, and the bonding substrate 30 is It becomes difficult to peel off. For example, if the shape of the substrate is a circle with a diameter of 6 inches (15.24 cm), the force due to atmospheric pressure applied from both sides of the substrate is comparable to pressurization using a weight of about 350 kg. The atmospheric pressure is not necessarily limited to 1 atm (1013.25 hPa), and may be pressurized with air or nitrogen above the atmospheric pressure.

  A more preferable joining method is vacuum heating and sticking (performing the heating and bonding step in a vacuum or under reduced pressure). Adhesiveness can be imparted to the protective layer and the adhesive layer by heating the substrate in vacuum or under reduced pressure to melt or soften the resist. Thereafter, by increasing the pressure around the substrates (pressurizing to atmospheric pressure or higher than atmospheric pressure), an adhesion force can be generated between the substrates.

  The peeling step can be performed by a method including a step of immersing the bonding substrate 30 in a peeling solution. During the bonding step, the groove-shaped recess 22 is formed in the adhesive layer 21, so that the stripping solution can permeate the groove-shaped recess 22 from the outer peripheral portion of the adhesive layer 21. In order to promote the penetration of the stripping solution, it is preferable that a groove-like recess 22 exists in the vicinity of the outer peripheral portion 23 of the adhesive layer 21. The stripping solution lowers the adhesive force with respect to the material of the adhesive layer 21 by the action of dissolution, decomposition, swelling, and the like. For example, in the case of a resist stripping solution, one or more of acid, alkali, organic solvent, polar solvent and the like are included as a resist removing component. In the case of an alkaline stripping solution, an organic alkali (amine) containing no metal salt is preferred as the alkali component.

  It is preferable that a peeling process includes the process (baking before isolation | separation) which bakes the joining board | substrate 30 before immersing the joining board | substrate 30 in stripping solution. Even when foreign substances such as organic substances, solvents, and liquids are attached to the surface of the bonding substrate 30, the foreign substances are volatilized and decomposed by baking, and the foreign substances can be removed or reduced. As a result, when the bonding substrate 30 is immersed in the peeling solution, the peeling solution easily penetrates into the adhesive layer 21, and the peeling of the adhesive layer 21 is promoted. The pre-separation bake is preferably performed at a temperature higher than the application temperature in the heat bonding step.

  The pattern of the groove-like recess 22 in the adhesive layer 21 is not particularly limited. Various pattern shapes are conceivable depending on the substrate 10 to be processed or a substrate product to be produced. As a second example different from FIG. 2 (first example), FIG. 3 shows a case where the number of groove-like recesses 22 is increased. In this case, compared with a 1st example, adhesive force improves and peelability also improves.

  The support substrate 20 after peeling can be reused as long as it is not damaged. When foreign matter such as the adhesive layer 21 or a part of the adhesive layer 21 remains on the support substrate 20, the cleaning process can be performed only on the support substrate 20.

  The photograph in FIG. 4 shows an example of a bonded substrate produced by attaching a support substrate having an adhesive layer in which groove-shaped concave portions are formed in a spider web shape (see FIG. 2A) to a glass plate. In this production example, a transparent glass plate was used as the substrate to be processed. The photograph on the left side of FIG. 4 (before 100 ° C. vacuum baking) shows the state of the resist layer between the substrates photographed through the glass plate at the stage before vacuum heating and pasting (baking at 100 ° C. in vacuum). The photograph on the right side of FIG. 4 (after vacuum baking at 100 ° C.) shows the state of the resist layer between the substrates taken through the glass plate at the stage where the vacuum warming is completed. From these photographs, it was shown that even if there is a foreign substance such as a resist gel, it can be attached without any problem.

  In the example shown in FIGS. 2 and 3, the bonding substrate 30 has unbonded portions 14 and 24 that do not have the protective layer 13 and the adhesive layer 21 on the outer peripheral portions of the substrate 10 and the support substrate 20. In the peeling process, as shown in FIGS. 5 and 6, it is preferable to insert the peeling plate 40 into the non-bonded portions 14 and 24 of the bonding substrate 30. Examples of the material of the release plate 40 include fluororesins such as Teflon (registered trademark) and metals such as stainless steel.

  The peeling plate 40 shown in FIG. 5 has a plate-like holding portion 41 having an edge portion 42 corresponding to the outer peripheral shape of the bonding substrate 30 and a spacer convex portion 43 protruding on one surface of the holding portion 41. The spacer convex portion 43 is provided to prevent contact between the bonding substrates 30 when the peeling plates 40 holding the bonding substrate 30 on the edge portions 42 are arranged in the thickness direction (vertical direction in FIG. 5).

  FIG. 6 is an enlarged view of a portion where the edge portion 42 of the peeling plate 40 is inserted into the non-bonded portions 14 and 24 of the bonding substrate 30. The substrate 10 to be processed is inclined so that the thickness decreases toward the unbonded portion 14 that does not have the protective layer 13 and the end surface 10c in the vicinity of the end surface 10c of the surface 10a on which the protective layer 13 is formed. It has a cut portion 15. The support substrate 20 has an unbonded portion 24 that does not have the adhesive layer 21 in the vicinity of the end surface 20c of the surface 20a on which the adhesive layer 21 is formed, and a cut that is inclined so that the thickness decreases toward the end surface 20c. Part 25. In this case, even if the protective layer 13 and the adhesive layer 21 are as thin as several μm to several tens of μm, it is easy to insert the edge portion 42 of the peeling plate 40 between the substrate to be processed 10 and the support substrate 20.

  The plan view of FIG. 7 shows an example in which an independent recess 26 is provided between the groove-like recess 22 provided in the adhesive layer 21 at a position apart from the outer peripheral portion 23 (see FIG. 2) and the groove-like recess 22. Show. When the bonding step includes a step of removing gas from between the substrate to be processed 10 and the support substrate 20 in a vacuum or under reduced pressure, by further providing the recess 26 in the adhesive layer 21, the inside of the recess 26 is formed. It becomes a vacuum or a reduced pressure state. Thereby, when the bonding substrate 30 is used, the pressure applied to the substrate to be processed 10 and the support substrate 20 increases, and the bonding substrate 30 becomes more difficult to peel. Moreover, when a peeling process is included, peeling liquid penetrate | invades through the groove part 22, and it becomes easy to peel the joining board | substrate 30. FIG.

  The sectional view of FIG. 8 shows an example in which a recess 16 is provided in the protective layer 13 provided on the surface 10a of the substrate 10 to be processed. Although not shown in FIG. 8, the adhesive layer 21 may be provided with a groove-like recess 22 (see FIGS. 2 and 3) and an independent recess 26 (see FIG. 7). In this case, since the internal space 17 of the recess 16 serves as a vacuum chamber, the pressure applied to the substrate to be processed 10 and the support substrate 20 increases when the bonding substrate 30 is used, and the bonding substrate 30 becomes more difficult to peel.

  A general-purpose substrate processing apparatus used in a semiconductor process or the like can be applied to the substrate processing apparatus used in the embodiment. According to this, a support and peeling can be implemented at low cost. It is also possible to use a robot that operates by automatic control for transferring and operating the substrates.

  The substrate processing apparatus has protective layer forming means for forming the protective layer 13 on the surface of the substrate to be processed 10 in order to perform the protective layer forming step. The protective layer forming means can include means for applying the material of the protective layer to the surface of the substrate to be processed by coating or the like, prebaking, exposure, development, and the like.

  The substrate processing apparatus has means for forming an adhesive layer 21 having a groove-shaped recess 22 that opens upward and has a closed end on the surface of the support substrate 20 in order to perform the adhesive layer forming step. The adhesive layer forming means may include means for applying the material of the adhesive layer to the surface of the support substrate by application or the like, prebaking, exposure, development, and the like. In order to pattern the groove-like recess 22 by photolithography, it is preferable to have a mask pattern.

  The substrate processing apparatus has a bonding means for manufacturing the bonding substrate 30 by bonding the substrate to be processed 10 and the support substrate 20 through the protective layer 13 and the adhesive layer 21 in order to perform the bonding step. The bonding means can include a heating device used for heat-bonding resists, and a vacuum (decompression) device for bonding in vacuum or under reduced pressure.

  The substrate processing apparatus has a peeling means for peeling the support substrate 20 from the substrate to be processed 10 by immersing the bonding substrate 30 in a peeling solution in order to perform the peeling step. The peeling means may include a peeling liquid supply means, a storage means, an exchange means, a rinsing means, and the like.

  The substrate processing apparatus can include a processing means for processing the target substrate to which the support substrate is bonded in order to perform the processing step. In this case, a substrate product can be manufactured at low cost by processing the substrate to be processed using a general-purpose substrate processing apparatus. A substrate processing apparatus having a processing means can also be used as a substrate product manufacturing apparatus.

According to the substrate processing apparatus of this embodiment, support and peeling can be performed using only an existing semiconductor process apparatus, so that the cost is low.
Since an existing resist can be used as a protective agent for the substrate to be processed, the cost is low.
As the support substrate, an unprocessed standard Si substrate or a glass substrate can be used, so that the cost is low.
Since an existing resist can be used as the adhesive layer, the cost is low.

  As mentioned above, although this invention has been demonstrated based on suitable embodiment, this invention is not limited to the above-mentioned embodiment, A various change is possible in the range which does not deviate from the summary of this invention.

  The substrate to be processed is not limited to a semiconductor substrate or a glass substrate, and can be applied to any substrate. The substrate to be processed is not limited to a raw material substrate and a semi-finished product substrate, but may be a product substrate.

  In this example, a semiconductor device in which a semiconductor element is formed on the surface of a thin substrate of silicon (Si) (thickness: 50 to 300 μm) is used as a substrate to be processed, and dry etching is performed from the back surface of the Si thin substrate subjected to support processing. The process of forming a through-hole and further peeling the support substrate is illustrated.

1) A resist layer having a thickness of about 6 μm was formed as an adhesive layer on one side of a support substrate (Si or glass), and a groove-shaped recess was patterned in the resist layer. The resist was removed from the outer periphery by about 5 mm so that a fluororesin sheet (peeling plate) described later could be inserted. The resist pattern was formed by a photolithography method by applying resist, pre-baking, exposing, and developing. As a resist for the adhesive layer, TMMR (registered trademark) P-W1000PM (trade name) manufactured by Tokyo Ohka Kogyo Co., Ltd. was used. The pre-baking temperature was 120 ° C. and the exposure conditions were 200 mJ. Development was performed by dip development for 5 minutes using NMD-3 (trade name) of Tokyo Ohka Kogyo Co., Ltd. as a developer.

2) A resist layer having a thickness of about 6 μm was formed as a protective layer on the element surface of the substrate to be processed. Further, a resist was applied to the through-hole forming portion of the substrate to be processed to form a pattern. The resist on the element surface side was removed about 5 mm from the outer periphery so that a fluororesin sheet (peeling plate) described later can be inserted. The formation of the resist layer was carried out by a method of undergoing resist coating, pre-baking, exposure, and development by a photolithography method. TMMR (registered trademark) P-W1000PM (trade name) manufactured by Tokyo Ohka Kogyo Co., Ltd. was used as the resist for the protective layer. The pre-baking temperature was 120 ° C. and the exposure conditions were 330 mJ. Development was performed by dip development for 5 minutes using NMD-3 from Tokyo Ohka Kogyo Co., Ltd. as a developer.

3) The resist layer on the element surface of the substrate to be processed was brought into contact with the surface of the support substrate on which the resist layer was formed, and superimposed.
4) Four side end surfaces of the support substrate and the substrate to be processed were fixed with a polyimide adhesive tape for preventing displacement. As the polyimide adhesive tape, Kapton (registered trademark) tape was used.
5) The corresponding product obtained in 4) above was degassed and heated in vacuum (for example, 0.09 Pa, 120 ° C., about 10 minutes), and pasted at atmospheric pressure when returning from vacuum to the atmosphere.
6) The polyimide adhesive tape was removed.

7) The corresponding support-treated product was etched from the opening with a dry etching apparatus to form a through hole. The etching conditions for the Si substrate may be those of a general Bosch method.
8) The corresponding product after etching was baked at 150 ° C. in the atmosphere.
9) A release plate made of a fluororesin sheet was sandwiched between unresisted portions of the resist. The fluororesin sheet has a thickness of about 0.1 to 1.0 mm and is cut obliquely along the substrate shape.

10) The bonded substrate was immersed vertically in an amine-based stripping solution, and the support substrate was stripped. For the stripper, PRX (registered trademark) manufactured by Rohm and Haas was used. The immersion conditions were about 3 hours at 70 ° C.
11) After peeling, the semiconductor device was dried by spin drying or IPA vapor drying after washing with isopropyl alcohol (IPA) to complete the treatment.

  The present invention can be used in a substrate processing method using a support substrate, a substrate product manufacturing method, and a substrate processing apparatus.

DESCRIPTION OF SYMBOLS 10 ... Substrate to be processed, 13 ... Protective layer, 14 ... Non-adhesive part, 20 ... Support substrate, 21 ... Adhesive layer, 22, 22a, 22b ... Groove-shaped concave part, 23 ... Outer peripheral part, 24 ... Non-adhesive part, 30 ... Bonding substrate, 31 ... Adhesive member, 40 ... Release plate.

Claims (12)

A substrate processing method comprising a support step of bonding a support substrate to a substrate to be processed, and a peeling step of peeling the support substrate from the substrate to be processed,
The support process includes
Forming a protective layer on the surface of the substrate to be processed;
Forming an adhesive layer having a groove-shaped recess that opens upward and has a closed end on or below the surface of the support substrate;
The substrate to be processed on which the protective layer is formed and the support substrate on which the adhesive layer is formed are opposed to each other, the protective layer and the adhesive layer are brought into contact with each other, and the protective layer and the adhesive layer are interposed therebetween. A bonding step of fabricating a bonded substrate by bonding the substrate to be processed and the support substrate;
The said peeling process includes the process of immersing the said joining board | substrate in peeling liquid, and making the said peeling liquid osmose | permeate into the said groove-shaped recessed part from the outer peripheral part of the said contact bonding layer.   2. The substrate processing method according to claim 1, wherein the bonding step includes a step of removing gas from between the substrate to be processed and the support substrate in an atmosphere having a pressure lower than atmospheric pressure.   The substrate processing method according to claim 2, wherein the adhesive layer has an independent recess at a position apart from the outer peripheral portion and the groove-like recess. The protective layer and the adhesive layer are made of a resist,
The substrate processing method according to claim 1, wherein the bonding step includes a step of mixing the resist of the protective layer and the resist of the adhesive layer by heating.   In the bonding step, the substrate to be processed and the support substrate are made to face each other, the protective layer and the adhesive layer are brought into contact with each other, and the resist of the protective layer and the resist of the adhesive layer are heated. The substrate processing method according to claim 4, further comprising a step of fixing at least side surfaces of the substrate to be processed and the support substrate with an adhesive member before the step of mixing.   6. The substrate processing method according to claim 1, wherein the peeling step includes a step of baking the bonding substrate before the bonding substrate is immersed in the peeling solution. In the support step, the bonded substrate is prepared so as to have an unbonded portion that does not include the protective layer and the adhesive layer on the outer periphery of the substrate to be processed and the support substrate,
The substrate processing method according to claim 1, wherein the peeling step includes a step of inserting a peeling plate into the non-bonded portion.   The substrate processing method according to claim 1, wherein the support substrate is made of a silicon substrate or a glass substrate, and does not have a hole penetrating the support substrate. A support step of bonding a support substrate to a substrate to be processed; a step of processing the substrate to be processed in a state where the support substrate is bonded; and a step of peeling the support substrate from the substrate to be processed. A method of manufacturing a substrate product having a process,
The said support process and the said peeling process are implemented by the substrate processing method in any one of Claims 1-8, The manufacturing method of the board | substrate product characterized by the above-mentioned. A substrate processing apparatus for performing the substrate processing method according to claim 1,
Means for forming a protective layer on the surface of the substrate to be processed;
Means for forming an adhesive layer having a groove-like recess that opens upward and has a closed end on or below the surface of the support substrate;
The substrate to be processed on which the protective layer is formed and the support substrate on which the adhesive layer is formed are opposed to each other, the protective layer and the adhesive layer are brought into contact with each other, and the protective layer and the adhesive layer are interposed therebetween. Bonding means for manufacturing a bonded substrate by bonding the substrate to be processed and the support substrate;
A stripping means for immersing the bonding substrate in a stripping solution, penetrating the stripping solution from an outer peripheral portion of the adhesive layer into the groove-shaped recess, and stripping the support substrate from the substrate to be processed;
A substrate processing apparatus comprising:   11. The substrate processing apparatus according to claim 10, wherein the means for forming the adhesive layer has a mask pattern for patterning the groove-like recesses by photolithography.   The substrate processing apparatus according to claim 10, further comprising a processing unit that processes the substrate to be processed in a state where the support substrate is bonded to the bonding substrate.