JP2016020523A - Corrosion prevention method - Google Patents

Corrosion prevention method Download PDF

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JP2016020523A
JP2016020523A JP2014144225A JP2014144225A JP2016020523A JP 2016020523 A JP2016020523 A JP 2016020523A JP 2014144225 A JP2014144225 A JP 2014144225A JP 2014144225 A JP2014144225 A JP 2014144225A JP 2016020523 A JP2016020523 A JP 2016020523A
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JP6362461B2 (en
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進藤　豊彦
Toyohiko Shindo
豊彦 進藤
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CONTAMINATION CONTROL SERVICE KK
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Abstract

PROBLEM TO BE SOLVED: To provide a corrosion prevention method for preventing corrosion on surfaces of components composing an apparatus in a treatment container used for a semiconductor manufacturing apparatus, a liquid crystal manufacturing apparatus, and an epitaxial substrate manufacturing apparatus and on surfaces of components composing an apparatus connected to the treatment container.SOLUTION: A corrosion prevention method according to the present invention includes a film forming step 100 of forming a film made of an amorphous metal on surfaces of components composing an apparatus in a treatment container included in an apparatus using process gas such as a semiconductor manufacturing apparatus, a liquid crystal manufacturing apparatus, and an epitaxial substrate manufacturing apparatus and on surfaces of components composing an apparatus connected to the treatment container. The corrosion prevention method also includes an additional processing step 200 of, after forming the amorphous metal film on the surfaces of the components by the film forming step 100, flattening the surfaces. The corrosion prevention method further includes a washing step 300 of, after the film forming step 100 and the additional processing step 200, washing the surfaces.SELECTED DRAWING: Figure 1

Description

本発明は、半導体製造装置などに用いられる処理容器内及び処理容器に接続される機器の部材の腐食防止方法に関する。   The present invention relates to a method for preventing corrosion of members in equipment used in a semiconductor manufacturing apparatus and the like and equipment connected to the processing container.

特許文献１（特開２００１−１６４３５４号公報）は、耐プラズマエロージョン性に優れるプラズマ処理容器内部材を開示する。この部材は、基材の表面が、アンダーコートとして形成された金属皮膜と、そのアンダーコート上の中間層として形成されたAl2O3皮膜と、その中間層上にトップコートとして形成されたY2O3溶射皮膜とからなる多層状複合層によって被覆されているもので、これによって、特許文献１に開示される発明は、一般に半導体及び液晶デバイスなどの製造プロセスでは、処理容器内でBF3やNF3のようなフッ化物、BCl3やSnCl4などの塩化物、HBrのような臭化物をはじめとする処理ガスを使用するため、処理容器内部材が著しく腐食損耗するという問題を解決しようとするものである。 Patent Document 1 (Japanese Patent Application Laid-Open No. 2001-164354) discloses an inner member of a plasma processing container having excellent plasma erosion resistance. In this member, the surface of the base material is a metal film formed as an undercoat, an Al 2 O 3 film formed as an intermediate layer on the undercoat, and a Y coat formed as a top coat on the intermediate layer. one that is covered by the multilayered composite layer comprising a 2 O 3 sprayed coating, thereby, the invention disclosed in Patent Document 1, in the manufacturing process, such as generally to semiconductor and liquid crystal devices, BF 3 in the processing container fluoride such as or NF 3, chlorides such as BCl 3 and SnCl 4, to use the process gas including bromide such as HBr, trying to solve the problem that the processing container member is significantly corroded wear To do.

特許文献２（特開２００７−２４７０４２号公報）は、強い腐食性環境下で、プラズマエッチング加工が行われる半導体加工用装置などの容器内配設部材の耐久性の向上を図ることを目的としたセラミック被覆部材を開示する。このセラミック被覆部材は、金属製又は非金属製基材の表面に、直接またはアンダーコート層を介して、周期律表IIIa族酸化物の溶射被覆からなる多孔質層を有し、その層状には、電子ビームやレーザービームなどの高エネルギーを照射処理によって形成される二次再結晶層が形成されているものである。   Patent Document 2 (Japanese Patent Laid-Open No. 2007-247042) aims to improve the durability of a member disposed in a container such as a semiconductor processing apparatus in which plasma etching is performed in a strong corrosive environment. A ceramic coated member is disclosed. This ceramic-coated member has a porous layer made of a thermal spray coating of Group IIIa oxide of the periodic table on the surface of a metallic or non-metallic substrate, directly or through an undercoat layer. A secondary recrystallized layer formed by irradiation treatment with high energy such as an electron beam or a laser beam is formed.

特開２００１−１６４３５４号公報JP 2001-164354 A 特開２００７−２４７０４２号公報Japanese Patent Laid-Open No. 2007-27042

従来のY2O3やAl2O3などのセラミック溶射膜は、ポーラスであるため、ラジカルやハロゲンガスが基材まで到達してしまい、基材の腐食が生じたり、金属からの金属汚染が生じてしまうという不具合が生じる。また、溶射膜はポーラスなため、ガスを含有することから、脱ガスが多く、真空引きに時間がかかったり、メンテナンスを行うために大気開放をした時に含有した腐食性ガスが雰囲気を汚染してしまうという不具合が生じる。 Conventional ceramic sprayed films such as Y 2 O 3 and Al 2 O 3 are porous, so radicals and halogen gases reach the substrate, causing corrosion of the substrate and metal contamination from the metal. There arises a problem that it occurs. Also, since the sprayed coating is porous and contains gas, it is often degassed, and it takes time to evacuate, and the corrosive gas contained when opening the atmosphere for maintenance can contaminate the atmosphere. The trouble that it ends up occurs.

このため、本発明は、半導体製造装置、液晶製造装置、エピ基板製造装置などに使用される処理容器内の機器及び処理容器に接続される機器を構成する部材の表面の腐食を防止する腐食防止方法に提供するものである。   For this reason, this invention prevents corrosion of the surface of the member which comprises the apparatus in the processing container used for a semiconductor manufacturing apparatus, a liquid crystal manufacturing apparatus, an epi-substrate manufacturing apparatus, etc., and the apparatus connected to a processing container. What is offered to the method.

本発明に係る腐食防止方法は、半導体製造装置、液晶製造装置、エピ基板製造装置のような腐食性ガスを使用する装置が具備する処理容器内の機器及び処理容器に接続される機器を構成する部材の表面にアモルファス金属からなる皮膜を形成する皮膜形成工程を具備することにある。アモルファス金属としては、Fe-Cr、Ni-Cr、Ni-Moなどがあるが、特にNiを有するものが望ましい。また、前記部材の材質としては、ステンレス、アルミ、セラミックス、ガラス、カーボン、樹脂などである。さらに、皮膜形成方法としては、溶射、スパッタが用いられる。   The corrosion prevention method according to the present invention constitutes a device in a processing vessel and a device connected to the processing vessel provided in a device using a corrosive gas such as a semiconductor manufacturing device, a liquid crystal manufacturing device, and an epi substrate manufacturing device. The object is to provide a film forming step of forming a film made of amorphous metal on the surface of the member. Amorphous metals include Fe-Cr, Ni-Cr, Ni-Mo, etc., but those having Ni are particularly desirable. The material of the member is stainless steel, aluminum, ceramics, glass, carbon, resin or the like. Further, thermal spraying and sputtering are used as the film forming method.

処理容器内の機器としては、例えば、電極、静電チャック、フォーカスリング、ゲートバルブ、インレットフランジ、シールキャップなどがある。処理容器に接続される機器としては、例えば、真空ポンプ、圧力センサー、バルブなどがある。   Examples of the equipment in the processing container include an electrode, an electrostatic chuck, a focus ring, a gate valve, an inlet flange, and a seal cap. Examples of equipment connected to the processing container include a vacuum pump, a pressure sensor, and a valve.

皮膜の材料としてアモルファス金属を用いることによって、耐食性が高く、かつ緻密な皮膜を形成できるので、ラジカルや腐食性ガスを含むプロセスガスが基材に到達することを防止できるために、基材の腐食がなく、金属汚染がなくなるものである。Niは金属汚染を引き起こさない。さらに脱ガスがない。   By using amorphous metal as the coating material, it is possible to form a dense coating with high corrosion resistance, so that process gases including radicals and corrosive gases can be prevented from reaching the substrate. There is no metal contamination. Ni does not cause metal contamination. There is no further degassing.

さらに、前記皮膜形成工程によって部材の表面に前記アモルファス金属皮膜を形成した後、その表面を平坦化する追加工工程を具備することが好ましい。   Furthermore, it is preferable to provide an additional process for flattening the surface after forming the amorphous metal film on the surface of the member by the film forming process.

さらに、前記皮膜形成工程若しくは追加工工程の後に、その表面を洗浄する洗浄工程を具備することが望ましい。洗浄工程に用いられる洗浄液は、たとえばフッ酸（HF）水溶液やフッ酸（HF）＋硝酸(HNO3)水溶液であることが望ましい。 Furthermore, it is desirable to provide a cleaning step for cleaning the surface after the film forming step or the additional processing step. The cleaning liquid used in the cleaning step is preferably, for example, a hydrofluoric acid (HF) aqueous solution or a hydrofluoric acid (HF) + nitric acid (HNO 3 ) aqueous solution.

本発明によれば、半導体製造装置、液晶製造装置、エピ基板製造装置などに使用される処理容器内の機器及び処理容器に接続される機器を構成する部材の表面に、耐食性に優れ、かつ緻密なアモルファス金属からなる皮膜が形成されるため、基材の腐食及び金属汚染を防止できるという効果を奏することができるものである。さらに、表面を平滑化することによってさらに効果を向上させることができるものである。さらにまた、表面をフッ酸等によって洗浄することによってさらにその効果を向上させることができるものである。   According to the present invention, the surface of a member constituting a device used in a semiconductor manufacturing apparatus, a liquid crystal manufacturing apparatus, an epi substrate manufacturing apparatus, etc. and a device connected to the processing container is excellent in corrosion resistance and dense. Since a film made of an amorphous metal is formed, the effect of preventing corrosion of the substrate and metal contamination can be achieved. Furthermore, the effect can be further improved by smoothing the surface. Furthermore, the effect can be further improved by washing the surface with hydrofluoric acid or the like.

図１は、本発明に係る腐食防止方法を示したフローチャート図である。FIG. 1 is a flowchart showing a corrosion prevention method according to the present invention.

本発明に係る腐食防止方法は、図１に示すように、半導体製造装置、液晶製造装置、エピ基板製造装置のようなプロセスガスを使用する装置が具備する処理容器内の機器及び処理容器に接続される機器を構成する部材の表面にアモルファス金属からなる皮膜を形成する皮膜形成工程１００を具備するものである。また、前記皮膜形成工程１００によって部材の表面に前記アモルファス金属の皮膜を形成した後、その表面を平坦化する追加工工程２００を具備するものである。さらにまた、前記皮膜形成工程１００若しくは追加工工程２００の後に、その表面を洗浄する洗浄工程３００を具備するものである。   As shown in FIG. 1, the corrosion prevention method according to the present invention is connected to equipment in a processing vessel and a processing vessel provided in an apparatus using a process gas such as a semiconductor manufacturing apparatus, a liquid crystal manufacturing apparatus, and an epitaxial substrate manufacturing apparatus. A film forming step 100 for forming a film made of an amorphous metal on the surface of a member constituting the device to be manufactured. Moreover, after forming the amorphous metal film on the surface of the member by the film forming process 100, an additional machining process 200 for flattening the surface is provided. Furthermore, after the film forming step 100 or the additional processing step 200, a cleaning step 300 for cleaning the surface is provided.

前記皮膜形成工程１００は、溶射、スパッタ等によって実行されるものである。   The film forming process 100 is performed by thermal spraying, sputtering, or the like.

前記追加工工程２００は、旋盤等によってシール面など面粗度が重要な箇所を平坦化する工程である。   The additional machining step 200 is a step of flattening a place where surface roughness is important, such as a seal surface, using a lathe.

前記洗浄工程３００は、フッ酸（HF）水溶液やフッ酸（HF）＋硝酸（HNO3）水溶液が使用される。 The cleaning process 300 uses a hydrofluoric acid (HF) aqueous solution or a hydrofluoric acid (HF) + nitric acid (HNO 3 ) aqueous solution.

下記する表１に記載されているように、それぞれの試料は、臭化水素ガス（HBr）による腐食試験及び金属汚染試験、さらには塩化水素ガス（HCl）による腐食試験及び金属汚染試験が実施される。腐食試験の結果は、目視によって行われ、全く腐食が見えない（最良：◎）、表面に少し変化が見える（良好：○）、腐食の一歩手前のように見える（良：△）、一部に腐食が起こっている（不良：×）の４段階に分類される。また、金属汚染試験については、ウェハ上の金属汚染をＩＣＰ−ＭＳに分析し、１平方センチメートル当たりの原子量によって汚染状態を判定するもので、２×１０９未満の場合（最良：◎）、２×１０９以上５×１０９未満（良好：○）、５×１０９以上９×１０９未満（良：△）、１×１０１０以上（不良：×）の４段階に分類されるものである。 As shown in Table 1 below, each sample was subjected to a corrosion test and metal contamination test using hydrogen bromide gas (HBr), and further a corrosion test and metal contamination test using hydrogen chloride gas (HCl). The The result of the corrosion test is visually observed, no corrosion is seen (best: ◎), a slight change is seen on the surface (good: ◯), it looks like one step before corrosion (good: △), part Is classified into four stages: (corrosion: x). As for the metal contamination test, the metal contamination on the wafer is analyzed by ICP-MS and the contamination state is determined by the atomic weight per square centimeter. When the contamination is less than 2 × 10 9 (best: ◎), 2 × 10 9 or more and less than 5 × 10 9 (good: ◯), 5 × 10 9 or more and less than 9 × 10 9 (good: Δ), 1 × 10 10 or more (defect: x) .

下記する表１に記載される発明試料１は、基材としてアルミニウムを使用し、このアルミ基材の表面にNi-Cr系のアモルファス金属を溶射して皮膜（溶射膜）を形成したものであり、追加工工程２００及び洗浄工程３００が施されなかった試料である。この発明試料１において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は◎であったが、金属汚染試験の結果は○であった。   The invention sample 1 described in Table 1 below uses aluminum as a base material, and a coating (sprayed film) is formed by spraying Ni-Cr amorphous metal on the surface of the aluminum base material. The sample was not subjected to the additional processing step 200 and the cleaning step 300. In Sample 1 of this invention, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was ◎, but the result of the metal contamination test was ○.

発明試料２は、基材としてアルミニウムを使用し、このアルミ基材の表面にNi-Cr系のアモルファス金属を溶射して皮膜（溶射膜）を形成したものであり、追加工工程２００が施されず、洗浄工程３００が施された試料である。この発明試料２において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は◎であり、金属汚染試験の結果も◎であった。   Invention sample 2 uses aluminum as a base material, and Ni-Cr-based amorphous metal is sprayed on the surface of the aluminum base material to form a coating (spraying film). In other words, the sample has been subjected to the cleaning process 300. In this invention sample 2, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was ◎, and the result of the metal contamination test was also ◎.

発明試料３は、基材としてアルミニウムを使用し、このアルミ基材の表面にNi-Cr系のアモルファス金属を溶射して皮膜（溶射膜）を形成したものであり、追加工工程２００が実施されたが、洗浄工程３００が施されなかった試料である。この発明試料３において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は◎であったが、金属汚染試験の結果は△であった。   Invention sample 3 uses aluminum as a base material, and Ni-Cr-based amorphous metal is sprayed on the surface of the aluminum base material to form a coating (spraying film), and an additional processing step 200 is performed. However, the sample was not subjected to the cleaning process 300. In this invention sample 3, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was ◎, but the result of the metal contamination test was Δ.

発明試料４は、基材としてアルミニウムを使用し、このアルミ基材の表面にNi-Cr系のアモルファス金属を溶射して皮膜（溶射膜）を形成したものであり、追加工工程２００及び洗浄工程３００が施された試料である。この発明試料４において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は◎であり、金属汚染試験の結果も◎であった。   Invention sample 4 uses aluminum as a base material, and a coating (spraying film) is formed on the surface of the aluminum base material by spraying Ni—Cr based amorphous metal. Additional processing step 200 and cleaning step 300 is a sample to which 300 is applied. In this invention sample 4, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was ◎, and the result of the metal contamination test was also ◎.

発明試料５は、基材としてステンレス鋼であるＳＵＳ３１６Ｌを使用し、このステンレス基材の表面にNi-Cr系のアモルファス金属を溶射して皮膜（溶射膜）を形成したものであり、追加工工程２００及び洗浄工程３００が施されなかった試料である。この発明試料５において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は◎であったが、金属汚染試験の結果は△であった。   Invention sample 5 uses SUS316L which is stainless steel as a base material, and a coating (spraying film) is formed by spraying Ni-Cr based amorphous metal on the surface of this stainless steel base material. 200 and the sample in which the cleaning process 300 was not performed. In Sample 5 of this invention, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was ◎, but the result of the metal contamination test was Δ.

発明試料６は、基材としてステンレス鋼であるＳＵＳ３１６Ｌを使用し、このステンレス基材の表面にNi-Cr系のアモルファス金属を溶射して皮膜（溶射膜）を形成したものであり、追加工工程２００は施されず、洗浄工程３００が施された試料である。この発明試料６において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は◎であり、金属汚染試験の結果も◎であった。   Invention sample 6 uses SUS316L which is stainless steel as a base material, and a coating (sprayed film) is formed by spraying Ni-Cr amorphous metal on the surface of this stainless steel base material. Reference numeral 200 is a sample that has not been subjected to the cleaning process 300. In this invention sample 6, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was ◎, and the result of the metal contamination test was also ◎.

発明試料７は、基材としてステンレス鋼であるＳＵＳ３１６Ｌを使用し、このステンレス基材の表面にNi-Cr系のアモルファス金属を溶射して皮膜（溶射膜）を形成したものであり、追加工工程２００が施されたが、洗浄工程３００が施されなかった試料である。この発明試料７において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は◎であったが、金属汚染試験の結果は△であった。   Invention sample 7 uses SUS316L which is stainless steel as a base material, and a coating (sprayed film) is formed by spraying Ni—Cr amorphous metal on the surface of this stainless steel base material. The sample was subjected to 200 but was not subjected to the cleaning step 300. In Sample 7 of the present invention, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was ◎, but the result of the metal contamination test was Δ.

発明試料８は、基材としたステンレス鋼であるＳＵＳ３１６Ｌを使用し、このステンレス基材の表面にNi-Cr系のアモルファス金属を溶射して皮膜（溶射膜）を形成したものであり、追加工工程２００及び洗浄工程３００が施された試料である。この発明試料８において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は◎であり、金属汚染試験の結果も◎であった。   Invention sample 8 uses SUS316L, which is stainless steel as a base material, and a coating (sprayed film) is formed by spraying Ni—Cr amorphous metal on the surface of this stainless steel base material. The sample is subjected to the process 200 and the cleaning process 300. In this invention sample 8, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was ◎, and the result of the metal contamination test was also ◎.

比較試料１は、基材としてアルミニウムを使用し、溶射膜を形成しなかったものであり、前記基材に洗浄工程３００のみが実施された試料である。この比較試料１において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は×であり、金属汚染試験の結果も×であった。   Comparative sample 1 is a sample in which aluminum is used as a base material and no sprayed coating is formed, and only the cleaning step 300 is performed on the base material. In this comparative sample 1, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was x, and the result of the metal contamination test was also x.

比較試料２は、基材としてステンレス鋼であるＳＵＳ３１６Ｌを使用し、溶射膜を形成しなかったものであり、前記基材に洗浄工程３００のみが実施された試料である。この比較試料２において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は×であり、金属汚染試験の結果も×であった。   Comparative sample 2 is a sample in which SUS316L, which is stainless steel, is used as a base material, a sprayed film is not formed, and only the cleaning step 300 is performed on the base material. In this comparative sample 2, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was x, and the result of the metal contamination test was also x.

比較試料３は、基材としてアルミアルマイトを使用し、このアルミアルマイト基材の表面にY2O3を溶射して溶射膜を形成したものであり、追加工工程２００及び洗浄工程３００が実施されなかった試料である。この比較試料３において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は○であり、金属汚染試験の結果は×であった。 Comparative sample 3 uses aluminum alumite as a base material, and Y 2 O 3 is sprayed on the surface of the aluminum alumite base material to form a sprayed film. The additional processing step 200 and the cleaning step 300 are performed. It was a sample that did not exist. In this comparative sample 3, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was o, and the result of the metal contamination test was x.

比較試料４は、基材としてアルミアルマイトを使用し、このアルミアルマイト基材の表面にAl2O3を溶射して溶射膜を形成したものであり、追加工工程２００及び洗浄工程３００が実施されなかった試料である。この比較試料４において、臭化水素ガス及び塩化水素ガスによる腐食実験の結果は○であり、金属汚染試験の結果は×であった。 Comparative sample 4 uses aluminum alumite as a base material, and sprays Al 2 O 3 on the surface of the aluminum alumite base material to form a sprayed film. The additional process 200 and the cleaning process 300 are performed. It was a sample that did not exist. In this comparative sample 4, the result of the corrosion experiment with hydrogen bromide gas and hydrogen chloride gas was o, and the result of the metal contamination test was x.

Figure 2016020523
Figure 2016020523

以上の結果から、アモルファス金属による皮膜（溶射膜）が形成された基材（アルミ若しくはステンレス鋼）が、腐食に対しては常に最良の結果を残すことが証明された。また、平滑化を行う追加工工程２００を施した場合、金属汚染に対して効果が落ちるが、洗浄工程３００を施すことによって金属汚染に対する能力が復活することが証明された。   From the above results, it was proved that the base material (aluminum or stainless steel) on which the coating (sprayed coating) of amorphous metal was formed always gave the best results against corrosion. Further, when the additional processing step 200 for performing the smoothing is performed, the effect on the metal contamination is reduced, but it has been proved that the ability for the metal contamination is restored by performing the cleaning step 300.

以上のことから、半導体製造装置、液晶製造装置、エピ基板製造装置などに使用される処理容器内の機器及び処理容器に接続される機器を構成する部材について、アモルファス金属による皮膜を形成することによってラジカルや腐食性ガスを有するプロセスガスよる腐食防止することができるものである。さらに、シール面等、平坦化が必要な部分については平坦化の追加工を施した後に、フッ酸水溶液や、フッ酸及び硝酸の混合水溶液などで洗浄することによって、金属汚染を復活させることができるものである。   From the above, by forming a film made of amorphous metal on the equipment in the processing container used in the semiconductor manufacturing apparatus, liquid crystal manufacturing apparatus, epi substrate manufacturing apparatus, etc. and the members constituting the equipment connected to the processing container It is possible to prevent corrosion caused by a process gas having radicals or corrosive gas. Furthermore, after performing additional flattening for parts that need to be flattened, such as seal surfaces, metal contamination can be restored by washing with hydrofluoric acid aqueous solution or a mixed aqueous solution of hydrofluoric acid and nitric acid. It can be done.

１００ 皮膜形成工程
２００ 追加工工程
３００ 洗浄工程 100 Film formation process 200 Additional process 300 Cleaning process

Claims (4)

腐食性ガスを使用する装置が具備する処理容器内の機器及び処理容器に接続される機器を構成する部材の表面にアモルファス金属からなる皮膜を形成する皮膜形成工程を具備することを特徴とする腐食防止方法。   Corrosion characterized by comprising a film forming step of forming a film made of an amorphous metal on the surface of a member constituting a device in a processing container and a device connected to the processing container provided in a device using a corrosive gas Prevention method. 腐食性ガスを使用する装置が、半導体製造装置、液晶製造装置、エピ基板製造装置であることを特徴とする請求項２記載の腐食防止方法。 3. The corrosion prevention method according to claim 2, wherein the apparatus using the corrosive gas is a semiconductor manufacturing apparatus, a liquid crystal manufacturing apparatus, or an epi substrate manufacturing apparatus. 前記皮膜形成工程によって部材の表面に前記アモルファス金属の皮膜を形成した後、その表面を平坦化する追加工工程を具備することを特徴とする請求項１又は２記載の腐食防止方法。   3. The corrosion prevention method according to claim 1, further comprising an additional processing step of flattening the surface of the member after the amorphous metal coating is formed on the surface of the member by the coating forming step. 前記皮膜形成工程若しくは追加工工程の後に、その表面を洗浄する洗浄工程を具備することを特徴とする請求項１〜３のいずれか１つに記載の腐食防止方法。   The corrosion prevention method according to any one of claims 1 to 3, further comprising a cleaning step of cleaning the surface after the film forming step or the additional processing step.
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