CN104241069A - Component with yttrium oxide coating layer in plasma device and manufacturing method of component - Google Patents
Component with yttrium oxide coating layer in plasma device and manufacturing method of component Download PDFInfo
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- CN104241069A CN104241069A CN201310234238.6A CN201310234238A CN104241069A CN 104241069 A CN104241069 A CN 104241069A CN 201310234238 A CN201310234238 A CN 201310234238A CN 104241069 A CN104241069 A CN 104241069A
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Abstract
The invention discloses a component with an yttrium oxide coating layer in a plasma device. The component comprises a component body, the yttrium oxide coating layer and a barrier layer. The yttrium oxide coating layer coats at least a part of the surface, exposed out of the plasma, of the component body, and the barrier layer is formed on the surface of the yttrium oxide coating layer. The barrier layer prevents yttrium oxide inside the yttrium oxide coating layer from reacting with the fluorine-containing plasma. By means of the component, yttrium fluoride particulate pollutants can be effectively prevented from being produced by the yttrium oxide coating layer and the fluorine-containing plasma.
Description
Technical field
The present invention relates to semiconductor processing equipment, particularly there is in a kind of plasma processing apparatus parts and the manufacture method thereof of yittrium oxide coating layer.
Background technology
In recent years, along with the development of semiconductor fabrication process, plasma-treating technology is widely used in the processing procedure of semiconductor components and devices.Above-mentioned processing procedure, carry out in plasma processing apparatus as deposition, etching technics etc., but, when carrying out plasma-treating technology, due to the bombardment of plasma and the corrosivity of process gas, the plasma processing apparatus internal part (chamber wall, gas spray, focusing ring etc. as plasma process chamber) be exposed in the highly active plasma environment of high density highly corrosive is also made to be corroded.
For gas spray, its body of existing gas spray is generally aluminium, but aluminium is easily corroded under plasma environment, causes its lost of life.For this problem, by covering the stronger protective layer of one deck corrosion resistance ability at the outer surface of gas spray body in prior art, improve its corrosion resistance.More common, the material of this protective layer is yittrium oxide, and it is higher to the rotproofness of the corrosive gass such as fluoro-gas or plasma, can the body of protective gas spray head not be etched.With above-mentioned in the anticorrosive object of gas spray mentioned similar, yttria protective layer is also sprayed at the surface of miscellaneous part in plasma processing apparatus.Yittrium oxide is adopted to be as another advantage of protective layer; although the yttrium atom in yittrium oxide also can generate yttrium fluoride with the corrosive gass such as fluoro-gas or plasma reaction; but yttrium fluoride has good corrosion resistance and stability equally; even if under therefore yittrium oxide is exposed to fluoro-gas or its plasma environment, also show stable highly corrosion resistant.
But, in actual applications, because the plasma density generated in the reaction chamber of plasma processing apparatus has uneven feature distribution, at plasma density larger part, the yttrium fluoride that the yttrium atom in yttria protective layer and fluorine-containing plasma reaction generate is more; Corresponding at plasma density smaller part, the yttrium fluoride of yttria protective layer Surface Creation is less, and therefore the speed of growth of the yttrium fluoride on yttria protective layer surface also just inevitably presents inhomogeneities.Along with the thickness of yttrium fluoride constantly increases; yttrium fluoride may be there is under pressure from the situation of yttria protective layer surfacial spalling growing region faster; and the yttrium fluoride peeled off forms particulate pollutant; defect can be caused to the semiconductor device processed (as silicon chip), even may cause component failure.In addition, the yttrium atom sputtered from yttria surfaces also may become particulate pollutant on miscellaneous part surface with reacting to generate yttrium fluoride and come off containing fluoro plasma.Therefore, for the parts in plasma processing apparatus with yittrium oxide coating layer, how to prevent yttrium fluoride particle contamination from just becoming particularly important.
Summary of the invention
Main purpose of the present invention is the defect overcoming prior art, provides a kind of parts that the coated yittrium oxide in its surface and fluorine-containing plasma reaction can be avoided to cause the plasma processing apparatus of particle contamination.
For reaching above-mentioned purpose, the invention provides the parts in a kind of plasma processing apparatus with yittrium oxide coating layer, comprising: hardware body; Yittrium oxide coating layer, it covers at least part of surface that described hardware body is exposed to plasma; And being formed at the barrier layer of described yittrium oxide cover surface, described barrier layer stops yittrium oxide in described yittrium oxide coating layer and fluorine-containing plasma reaction.
Preferably, described barrier layer is yttrium fluoride barrier layer or erbium oxide barrier layer.
Preferably, the thickness on described barrier layer is 2 microns to 10 microns.
Preferably, described barrier layer is formed by plasma-deposited or thermal spray deposition or sol-gel process deposition.
Preferably, described barrier layer is carried out identical depositing operation by continuing after described yittrium oxide coating layer deposition and is formed, and described depositing operation comprises plasma-deposited, thermal spray deposition, ion assisted deposition, sputtering sedimentation or physical vapour deposition (PVD).
Preferably, described barrier layer is yttrium fluoride barrier layer, it is formed containing fluoro plasma in the reaction chamber of described plasma device by before carrying out plasma-treating technology, and is reacted by the described surface containing fluoro plasma and described yittrium oxide coating layer and formed.
Preferably, form the described radio-frequency power containing fluoro plasma and be less than or equal to 1000W, reaction chamber air pressure is more than or equal to 100mtorr.
Preferably, described parts are selected from gas spray, gas distribution plate, plasma confinement rings, focusing ring, the inwall of electrostatic chuck or plasma processing apparatus reaction chamber.
According to a further aspect in the invention, present invention also offers and a kind ofly manufacture the above-mentioned manufacture method with the parts of yittrium oxide coating layer, it comprises the steps:
Step S1: manufacture component body;
Step S2: at least part of deposited on silicon yittrium oxide coating layer being exposed to plasma in described hardware body; And
Step S3: form barrier layer in described yittrium oxide cover surface, to stop yittrium oxide in described yittrium oxide coating layer and fluorine-containing plasma reaction.
Preferably, described step S3 comprises by plasma-deposited or thermal spray deposition or sol-gel process deposit barrier material to form described barrier layer.
Preferably, described step S3 comprises continuing upon step s 2 and forms described barrier layer with identical depositing operation, and described depositing operation comprises plasma-deposited or thermal spray deposition or ion assisted deposition or sputtering sedimentation or physical vapour deposition (PVD) barrier material to form described barrier layer.
Preferably, described barrier material is yttrium fluoride or erbium oxide.
Preferably, before described step S3 is included in and carries out plasma-treating technology, formed in the reaction chamber of described plasma device containing fluoro plasma, the described surface reaction containing fluoro plasma and described yittrium oxide coating layer generates yittrium oxide to form described barrier layer.
Preferably, form the described radio-frequency power containing fluoro plasma and be less than or equal to 1000W, reaction chamber air pressure is more than or equal to 100mtorr.
Preferably, it is characterized in that, described parts are selected from gas spray, gas distribution plate, plasma confinement rings, focusing ring, the inwall of electrostatic chuck or plasma processing apparatus reaction chamber.
Beneficial effect of the present invention is the barrier layer being formed one deck dense uniform by yittrium oxide cover surface, effectively can avoid the yttrium atom in yittrium oxide and react containing fluoro plasma causing particle contamination.In addition, barrier layer also not easily by fluorine-containing plasma etching, has better stability.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of embodiment of the present invention plasma processing apparatus;
Fig. 2 is the partial sectional view that the embodiment of the present invention has the spray head of yittrium oxide coating layer;
Fig. 3 is the flow chart of the component manufacturing method in embodiment of the present invention plasma processing apparatus with yittrium oxide coating layer.
Embodiment
For making content of the present invention clearly understandable, below in conjunction with Figure of description, content of the present invention is described further.Certain the present invention is not limited to this specific embodiment, and the general replacement known by those skilled in the art is also encompassed in protection scope of the present invention.
In the present invention, the parts with yittrium oxide coating layer can be used for plasma processing apparatus.Fig. 1 is the structural representation of the plasma processing apparatus in the present embodiment.Refer to Fig. 1, plasma processing apparatus has a reaction chamber 1, has top electrode 2 arranged in parallel and bottom electrode 3 in reaction chamber 1.Usually, top electrode is configured in reacting gas spray head 4, and bottom electrode is configured in electrostatic chuck 5.Electrostatic chuck 5 places substrate W to be processed, and this substrate W can be the semiconductor chip treating to etch or to process or the glass plate treating to be processed into flat-panel monitor.Producing electrostatic force between electrostatic chuck 5 and substrate W makes substrate be adsorbed on firmly on electrostatic chuck 5, reaches the object of fixed substrate.Reacting gas is input in reaction chamber 1 from gas source, one or more radio-frequency power supply can be applied individually on the bottom electrode or is applied on top electrode and bottom electrode respectively simultaneously, in order to radio-frequency power is transported on bottom electrode or on top electrode and bottom electrode, thus produce large rf electric field in reaction chamber inside, this rf electric field accelerates the electronics being present in reaction chamber inside on a small quantity, makes it the gas molecule collision with the reacting gas inputted.These collisions cause exciting of the ionization of reacting gas and plasma, thus produce plasma in reaction chamber.In addition, be also provided with focusing ring 6 in plasma processing apparatus around substrate W, in order to provide the environment of a relative closure around substrate, confined plasma is to improve the homogeneity of the plasma on substrate surface.In addition, electrostatic chuck 3 both sides also can arrange plasma confinement rings 7, its for by plasma confinement in supporting zone, by ground devices 8 by plasma confinement rings ground connection.The correct position place of plasma processing apparatus chamber is provided with exhaust gas region, and exhaust gas region is connected with external exhaust apparatus (not shown), in order to extract chamber out by by the reacting gas crossed and bi-product gas in processing procedure.
Should be appreciated that, plasma processing apparatus in the present invention can be various types of general plasma processing apparatus, be only exemplary shown in Fig. 1, it can comprise less or more element, or the arrangement of this element may be to that indicated in the drawings identical or different.
As previously mentioned, there are the parts of yittrium oxide coating layer for plasma processing apparatus, it can be all parts in plasma processing apparatus, include but not limited to above-mentioned gas spray 4, electrostatic chuck 5, focusing ring 6, plasma confinement rings 7 or miscellaneous part are as the chamber wall of reaction chamber, air exhaust loop, gas distribution plate etc.In the present embodiment, be described for the parts that this has yittrium oxide coating layer as gas spray, but this is not used in and limits the scope of the invention.
Figure 2 shows that the fragmentary sectional view of the gas spray with yittrium oxide coating layer.Please refer to Fig. 2, gas spray comprises spray head body 10, yittrium oxide coating layer 20 and barrier layer 30.Wherein, spray head body material can be metal (such as aluminium) or metal alloy or pottery.Yittrium oxide coating layer 20 is coated in spray head body and is easily exposed at least part of surface of plasma, as being covered in the lower surface of spray head body 10 in the present embodiment, to protect the not subject plasma erosion of spray head body.Yittrium oxide coating layer can select sol-gel deposition, plasma-deposited, the existing technique formation such as thermal spray deposition, ion assisted deposition, sputtering sedimentation, physical vapour deposition (PVD).For avoiding peeling off or unstable properties, the thickness of yittrium oxide coating layer is generally depending on preparation technology and applied environment.The yittrium oxide coating thickness such as adopting spraying process to be formed is generally 0.2 millimeter, and thickness prepared by using plasma reinforce physical vapor deposition is 0.02 to 0.15 millimeter.In addition, in actual implementation process, yittrium oxide coating layer can also adulterate yttrium fluoride, erbium oxide, zirconia or aluminium oxide, and above alloy can improve the anti-plasma corrosive nature of yittrium oxide coating layer.
The growth produced due to yittrium oxide and fluorine-containing plasma reaction faster yttrium fluoride particle easily comes off from yittrium oxide cover surface, this not only can cause new yttrium fluoride Particulate Pollution, also spray head yittrium oxide coating layer can be caused thinning, and anti-plasma corrosive nature is deteriorated.Based on this, the yittrium oxide coating layer 20 of blanket gas spray head body is formed the barrier layer 30 of one deck even compact, the effect on barrier layer 30 is to stop yittrium oxide and fluorine-containing plasma reaction to generate yttrium fluoride, thus can avoid the defect that yttrium fluoride particle peels off.Barrier layer 30 is thin compared with yittrium oxide coating layer 20, and its thickness can be 2 microns to 10 microns.Further, barrier layer 30 also has the characteristic of anti-plasma corrosion, and itself is not easily by fluorine-containing plasma attack.In a specific embodiment of the present invention, barrier layer is yttrium fluoride barrier layer, this is because yttrium fluoride not only can isolation oxidation yttrium and fluorine-containing plasma reaction, not easily by fluorine-containing plasma etching, and also can not generate with fluorine-containing plasma reaction the film compound that the new anti-plasma that may peel off corrodes, even if after therefore spray head uses a period of time, yttrium fluoride barrier layer also can not be thinning or form new compound particle and pollute.In another specific embodiment of the present invention, barrier layer 30 also can be erbium oxide barrier layer, and it has the characteristic similar with yttrium fluoride barrier layer, and therefore not to repeat here.
It should be noted that barrier layer 30 is formed by multiple method.In one embodiment of this invention, barrier layer is formed by film coating process.Specifically, be that the methods such as using plasma deposition, thermal spray deposition, sol-gel process deposition are at yittrium oxide cover surface deposited barrier layer; Or continue with same deposition technique formation barrier layer after forming yittrium oxide coating layer with depositing operation, this depositing operation is such as plasma-deposited or thermal spray deposition or ion assisted deposition or sputtering sedimentation or other physical vapour deposition (PVD)s, adopts identical depositing operation can Simplified flowsheet step.Can realize Large-Area-Uniform plated film easily by above-mentioned film coating process, therefore formed barrier layer density and uniformity can both ensure.
Preferably, in another embodiment of the invention, barrier layer 30 is yttrium fluoride barrier layer, the formation method on this yttrium fluoride barrier layer 30 is by before carrying out plasma-treating technology, first formed in plasma reaction chamber containing fluoro plasma, the surface containing fluoro plasma and yittrium oxide coating layer by this reacts and is formed.For making yttrium fluoride barrier layer have good thickness and density uniformity, the radio-frequency power formed containing fluoro plasma is less than or equal to 1000W, and reaction chamber air pressure is more than or equal to 100mtorr.
In sum, the gas spray that the present embodiment provides, by forming the barrier layer of even compact in yittrium oxide cover surface, avoid yittrium oxide and fluorine-containing plasma reaction produces yttrium fluoride particle contamination, and barrier layer itself is not easily by fluorine-containing plasma etching, therefore, effective raising is able to the useful life of gas spray.
Existing composition graphs 3 is described further the manufacture method with the parts of yittrium oxide coating layer of the present invention.As previously mentioned, the parts with yittrium oxide coating layer can be selected from gas spray, gas distribution plate, plasma confinement rings, focusing ring, the parts of the various plasma processing apparatus inside such as electrostatic chuck or reaction chamber inwall.
Figure 3 shows that the schematic flow sheet of manufacture method of the present invention, it comprises the steps:
Step S1: manufacture component body.
Step S2: at least part of deposited on silicon yittrium oxide coating layer being exposed to plasma in hardware body.The deposition process of yittrium oxide coating layer can select sol-gel deposition, plasma-deposited, thermal spray deposition, ion assisted deposition, sputtering sedimentation.The process conditions used in those methods can be existing process conditions, and the deposit thickness of yittrium oxide coating layer is generally depending on preparation technology and applied environment.Such as adopt spraying process deposit thickness to be generally 0.2 millimeter, thickness prepared by using plasma reinforce physical vapor deposition is 0.02 to 0.15 millimeter.In actual implementation process, yittrium oxide coating layer can also adulterate yttrium fluoride, erbium oxide, zirconia or aluminium oxide, and above alloy can improve the anti-plasma corrosive nature of yittrium oxide coating layer.
Step S3: form barrier layer, to stop the yittrium oxide in yittrium oxide coating layer and fluorine-containing plasma reaction in yittrium oxide cover surface.
In a specific embodiment of the present invention, barrier layer is formed by film coating process.Specifically, the method such as using plasma deposition, thermal spray deposition, sol-gel process deposition forms barrier layer at yittrium oxide cover surface deposit barrier material; Or continue after yittrium oxide coating layer deposition and carry out plasma-deposited or thermal spray deposition or ion assisted deposition or sputtering sedimentation or physical vapour deposition (PVD) barrier material and form barrier layer.Adopt film coating process can realize Large-Area-Uniform plated film easily, the barrier layer density formed and uniformity can both ensure.Further, barrier material itself also has the characteristic of resistance to fluorine-containing plasma etching.Preferably, barrier material is yttrium fluoride or erbium oxide, it not only can isolation oxidation yttrium and fluorine-containing plasma reaction, and itself not easily generates new compound by fluorine-containing plasma etching or with fluorine-containing plasma reaction, even if under being therefore in fluorine-containing plasma environment for a long time, the barrier layer of formation also can not be thinning or cause new compound particle to pollute.
Preferably, in another specific embodiment of the present invention, the forming step on barrier layer is:
Before carrying out plasma-treating technology, first formed in plasma reaction chamber containing fluoro plasma; Should react containing fluoro plasma and yttria surfaces and form uniform yttrium fluoride barrier layer.Containing fluoro plasma by passing in reaction chamber by fluoro-gas, this fluoro-gas is encouraged to ionize and formed.For reaching good thickness and density uniformity, the radio-frequency power formed containing fluoro plasma is less than or equal to 1000W, and reaction chamber air pressure is more than or equal to 100mtorr.Adopt the method to form yttrium fluoride barrier layer, its compactness and having good uniformity, barrier layer adhesiveness is higher; In addition, the method makes full use of containing fluoro plasma, and the technique and the follow-up plasma-treating technology that form yttrium fluoride barrier layer perform at same reaction chamber situ, and compared to aforesaid film coating process, cost is lower, and manufacture difficulty declines.
In sum, the present invention, by forming the barrier layer of one deck even compact again in the yittrium oxide cover surface of parts, effectively can avoid the yttrium atom in yittrium oxide and react containing fluoro plasma causing yttrium fluoride particle contamination, improve the useful life of parts.Barrier layer also has the characteristic that anti-plasma corrodes, even if after therefore using a period of time under plasma environment, barrier layer is also not easily thinning, thus can Long-Time Service and without the need to being concatenated to form, manufacturing cost is more cheap after once being formed.In addition, this barrier layer itself not easily generates the film compound that new anti-plasma corrodes with fluorine-containing plasma reaction, can avoid causing new film compound particle contamination.
Although the present invention discloses as above with preferred embodiment; right described many embodiments are citing for convenience of explanation only; and be not used to limit the present invention; those skilled in the art can do some changes and retouching without departing from the spirit and scope of the present invention, and the protection range that the present invention advocates should be as the criterion with described in claims.
Claims (15)
1. there are in plasma processing apparatus parts for yittrium oxide coating layer, it is characterized in that, comprising:
Hardware body;
Yittrium oxide coating layer, it covers at least part of surface that described hardware body is exposed to plasma; And
Be formed at the barrier layer of described yittrium oxide cover surface, described barrier layer stops yittrium oxide in described yittrium oxide coating layer and fluorine-containing plasma reaction.
2. the parts with yittrium oxide coating layer according to claim 1, is characterized in that, described barrier layer is yttrium fluoride barrier layer or erbium oxide barrier layer.
3. the parts with yittrium oxide coating layer according to claim 1, is characterized in that, the thickness on described barrier layer is 2 microns to 10 microns.
4. the parts with yittrium oxide coating layer according to claim 2, is characterized in that, described barrier layer is formed by plasma-deposited or thermal spray deposition or sol-gel process deposition.
5. the parts with yittrium oxide coating layer according to claim 2, it is characterized in that, described barrier layer is carried out identical depositing operation by continuing after described yittrium oxide coating layer deposition and is formed, described depositing operation comprises plasma-deposited, thermal spray deposition, ion assisted deposition, sputtering sedimentation or physical vapour deposition (PVD).
6. the parts with yittrium oxide coating layer according to claim 2, it is characterized in that, described barrier layer is yttrium fluoride barrier layer, it is by before carrying out plasma-treating technology, formed containing fluoro plasma in the reaction chamber of described plasma device, and reacted by the described surface containing fluoro plasma and described yittrium oxide coating layer and formed.
7. the parts with yittrium oxide coating layer according to claim 6, is characterized in that, form the described radio-frequency power containing fluoro plasma and be less than or equal to 1000W, reaction chamber air pressure is more than or equal to 100mtorr.
8. the parts with yittrium oxide coating layer according to claim 1, is characterized in that, described parts are selected from gas spray, gas distribution plate, plasma confinement rings, focusing ring, the inwall of electrostatic chuck or plasma processing apparatus reaction chamber.
9. there is in plasma processing apparatus a manufacture method for the parts of yittrium oxide coating layer, it is characterized in that, comprise the steps:
Step S1: manufacture component body;
Step S2: at least part of deposited on silicon yittrium oxide coating layer being exposed to plasma in described hardware body; And
Step S3: form barrier layer in described yittrium oxide cover surface, to stop yittrium oxide in described yittrium oxide coating layer and fluorine-containing plasma reaction.
10. the manufacture method with the parts of yittrium oxide coating layer according to claim 9, is characterized in that, described step S3 comprises:
By plasma-deposited or thermal spray deposition or sol-gel process deposit barrier material to form described barrier layer.
11. manufacture methods with the parts of yittrium oxide coating layer according to claim 9, it is characterized in that, described step S3 comprises:
Continue upon step s 2 and form described barrier layer with identical depositing operation, described depositing operation comprises plasma-deposited or thermal spray deposition or ion assisted deposition or sputtering sedimentation or physical vapour deposition (PVD) barrier material to form described barrier layer.
12. manufacture methods with the parts of yittrium oxide coating layer according to claim 10 or 11, it is characterized in that, described barrier material is yttrium fluoride or erbium oxide.
13. manufacture methods with the parts of yittrium oxide coating layer according to claim 9, it is characterized in that, described step S3 comprises:
Before carrying out plasma-treating technology, formed containing fluoro plasma in the reaction chamber of described plasma device, the described surface reaction containing fluoro plasma and described yittrium oxide coating layer generates yittrium oxide to form described barrier layer.
14. manufacture methods with the parts of yittrium oxide coating layer according to claim 13, is characterized in that, form the described radio-frequency power containing fluoro plasma and be less than or equal to 1000W, reaction chamber air pressure is more than or equal to 100mtorr.
15. manufacture methods with the parts of yittrium oxide coating layer according to claim 9, it is characterized in that, described parts are selected from gas spray, gas distribution plate, plasma confinement rings, focusing ring, the inwall of electrostatic chuck or plasma processing apparatus reaction chamber.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310234238.6A CN104241069B (en) | 2013-06-13 | 2013-06-13 | There is in plasma device parts and the manufacture method thereof of yittrium oxide clad |
| TW103120475A TW201447968A (en) | 2013-06-13 | 2014-06-13 | A component having yttrium oxide coating layer in plasma processing apparatus, and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310234238.6A CN104241069B (en) | 2013-06-13 | 2013-06-13 | There is in plasma device parts and the manufacture method thereof of yittrium oxide clad |
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| Publication Number | Publication Date |
|---|---|
| CN104241069A true CN104241069A (en) | 2014-12-24 |
| CN104241069B CN104241069B (en) | 2016-11-23 |
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| CN201310234238.6A Active CN104241069B (en) | 2013-06-13 | 2013-06-13 | There is in plasma device parts and the manufacture method thereof of yittrium oxide clad |
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| CN (1) | CN104241069B (en) |
| TW (1) | TW201447968A (en) |
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| CN106252188A (en) * | 2015-06-04 | 2016-12-21 | 朗姆研究公司 | There is the plasma-etching apparatus of the coating of plasma resistant etching |
| CN107946163A (en) * | 2016-10-13 | 2018-04-20 | 应用材料公司 | Yittrium oxide is chemically converted to yttrium fluoride and fluorine yittrium oxide to develop the corrosion-resistant coating of the pretreatment for plasma source components |
| CN109423606A (en) * | 2017-08-24 | 2019-03-05 | 中微半导体设备(上海)有限公司 | Focusing ring and its corrosion-resistant means of defence |
| CN112447548A (en) * | 2019-09-03 | 2021-03-05 | 中微半导体设备(上海)股份有限公司 | Semiconductor processing equipment and transfer port structure between chambers |
| CN112899617A (en) * | 2019-12-04 | 2021-06-04 | 中微半导体设备(上海)股份有限公司 | Method, device, component and plasma processing device for forming plasma-resistant coating |
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| CN114256039A (en) * | 2021-12-21 | 2022-03-29 | 苏州众芯联电子材料有限公司 | Manufacturing process of dry etching lower electrode |
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| CN106252188A (en) * | 2015-06-04 | 2016-12-21 | 朗姆研究公司 | There is the plasma-etching apparatus of the coating of plasma resistant etching |
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| CN114649179A (en) * | 2020-12-18 | 2022-06-21 | 中微半导体设备(上海)股份有限公司 | Semiconductor component, plasma processing apparatus, and method for forming corrosion-resistant coating |
| CN114256039A (en) * | 2021-12-21 | 2022-03-29 | 苏州众芯联电子材料有限公司 | Manufacturing process of dry etching lower electrode |
| CN114256039B (en) * | 2021-12-21 | 2024-02-09 | 苏州众芯联电子材料有限公司 | Manufacturing process of dry-etched lower electrode |
| CN114649188A (en) * | 2022-02-08 | 2022-06-21 | 北京子牛亦东科技有限公司 | Corrosion-resistant gas spray header and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201447968A (en) | 2014-12-16 |
| TWI600049B (en) | 2017-09-21 |
| CN104241069B (en) | 2016-11-23 |
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