JP2016012037A - Light modulator - Google Patents

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JP2016012037A
JP2016012037A JP2014133562A JP2014133562A JP2016012037A JP 2016012037 A JP2016012037 A JP 2016012037A JP 2014133562 A JP2014133562 A JP 2014133562A JP 2014133562 A JP2014133562 A JP 2014133562A JP 2016012037 A JP2016012037 A JP 2016012037A
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substrate
electrode
optical modulator
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JP6459245B2 (en
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徳一 宮崎
Tokuichi Miyazaki
徳一 宮崎
秀樹 一明
Hideki Kazuaki
秀樹 一明
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Sumitomo Osaka Cement Co Ltd
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  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a light modulator that is improved in high-frequency characteristics and can suppress a pyroelectric effect, and to provide a light modulator that also suppresses generation of an internal stress on a substrate constituting the light modulator.SOLUTION: The light modulator includes a substrate, an optical waveguide (not shown in the figure) formed on an upper surface side of the substrate, control electrodes (2, 31, 32) to control light waves propagating in the optical waveguide, and an electric connecting part electrically connecting the control electrodes and a high-frequency line (not shown in the figure) out of the substrate. The control electrodes comprise a signal electrode 2 and a first ground electrode 31 and a second ground electrode 32 disposed to interpose the signal electrode. A conducting part 40 that electrically connects the first ground electrode and the second ground electrode and is spaced from the signal electrode 2 is formed on a side face of the substrate where the electric connecting part is disposed.

Description

本発明は、光変調器に関し、特に、基板と、該基板の上面側に形成された光導波路と、該光導波路を伝播する光波を制御するための制御電極と、該制御電極と該基板外の高周波線路とを電気的に接続する電気接続部とを有する光変調器に関する。   The present invention relates to an optical modulator, and in particular, a substrate, an optical waveguide formed on the upper surface side of the substrate, a control electrode for controlling a light wave propagating through the optical waveguide, the control electrode, and the outside of the substrate The present invention relates to an optical modulator having an electrical connection portion for electrically connecting the high-frequency line.

光通信分野や光計測分野において、光変調器、特に、基板に光導波路や当該光導波路を伝播する光波を制御する制御電極を備えた光変調器が多用されている。近年では、変調速度の高速化および大容量化が求められ、また、直角位相振幅変調(QAM;Quadrature Amplitude Modulation)などの多値変調方式も利用されるようになり、従来よりもさらに広帯域で、周波数応答の平坦な光帯域特性が求められている。   In the optical communication field and the optical measurement field, an optical modulator, in particular, an optical modulator provided with a control electrode for controlling an optical waveguide and a light wave propagating through the optical waveguide on a substrate is frequently used. In recent years, higher modulation speeds and larger capacities have been demanded, and multi-level modulation schemes such as quadrature amplitude modulation (QAM) have come to be used. An optical band characteristic with a flat frequency response is required.

特許文献1乃至3のように、高周波特性の改善のため、基板の裏面や側面を金属膜などの導電性膜で被覆することが開示されている。また、特許文献2では、筺体やコネクタ部との接地(GND)接続を強化するため、信号電極の入出力部に形成されるテーパ部に対応した部分とテーパ部端縁のフィーダ部の近傍を除き金属膜を除去し、はんだによる接続を行う構成が開示されている。   As disclosed in Patent Documents 1 to 3, it is disclosed that a back surface and a side surface of a substrate are covered with a conductive film such as a metal film in order to improve high frequency characteristics. Moreover, in patent document 2, in order to strengthen grounding (GND) connection with a housing and a connector part, the part corresponding to the taper part formed in the input / output part of the signal electrode and the vicinity of the feeder part of the taper part edge are provided. A configuration in which the metal film is removed except that the connection is made by solder is disclosed.

さらに、光変調器の基板にニオブ酸リチウム(LN)などの電気光学結晶を用いた場合、焦電効果を抑制するために変調素子チップの側面に金属などにより導電膜を形成する構成も開示されている。   Furthermore, when an electro-optic crystal such as lithium niobate (LN) is used for the substrate of the optical modulator, a configuration is also disclosed in which a conductive film is formed of metal or the like on the side surface of the modulation element chip in order to suppress the pyroelectric effect. ing.

接続パッド周辺において、上述したように基板の側面に金属部分があると、電気的接続の前後の電界分布が乱れてしまい、高周波線路の信号線と基板側面の金属GND間に寄生容量が発生する。これにより、電気信号の伝送特性S21で高周波帯域にディップが生じ、光帯域の高周波応答が劣化することとなる。   If there is a metal portion on the side surface of the substrate as described above around the connection pad, the electric field distribution before and after the electrical connection is disturbed, and parasitic capacitance is generated between the signal line of the high-frequency line and the metal GND on the side surface of the substrate. . As a result, a dip occurs in the high frequency band in the transmission characteristic S21 of the electric signal, and the high frequency response in the optical band is deteriorated.

また、特許文献2に示すように、GND接続を改善するために、はんだによって接地電極を筐体に固定した場合には、制御電極の入出力部の数十mmの距離が筐体に強固に固定されることとなる。これにより、外部環境温度の変化に対し、光変調器を構成する基板と筺体の線膨張係数の違いによる内部応力が基板に加わり、内部応力に応じて基板屈折率が変化することにより生じるバイアス点のシフトや、最悪の場合には基板が破損するという問題を生じる。   In addition, as shown in Patent Document 2, when the ground electrode is fixed to the casing with solder in order to improve the GND connection, a distance of several tens of millimeters of the input / output portion of the control electrode is firmly attached to the casing. It will be fixed. As a result, the internal stress due to the difference in the linear expansion coefficient between the substrate constituting the optical modulator and the housing is applied to the substrate with respect to the change in the external environment temperature, and the bias point generated by the change in the substrate refractive index according to the internal stress. Shift, and in the worst case, the substrate is damaged.

特開平5−158002号公報JP-A-5-158002 特開平10−239648号公報Japanese Patent Laid-Open No. 10-239648 特開2005−181537号公報JP 2005-181537 A 特開平4−214526号公報JP-A-4-214526

本発明が解決しようとする課題は、上述したような問題を解決し、高周波特性を改善し、焦電効果を抑制できる光変調器を提供することである。さらに、光変調器を構成する基板への内部応力の発生も抑制した光変調器を提供することである。   The problem to be solved by the present invention is to provide an optical modulator capable of solving the above-described problems, improving high-frequency characteristics, and suppressing the pyroelectric effect. It is another object of the present invention to provide an optical modulator that suppresses generation of internal stress on a substrate constituting the optical modulator.

上記課題を解決するため、本発明の光変調器は以下のような技術的特徴を有する。
(1) 基板と、該基板の上面側に形成された光導波路と、該光導波路を伝播する光波を制御するための制御電極と、該制御電極と該基板外の高周波線路とを電気的に接続する電気接続部とを有する光変調器において、該制御電極は、信号電極と該信号電極を挟むように配置された第一の接地電極と第二の接地電極から構成され、該基板で該電気接続部が配置される側の側面には、前記第一の接地電極と前記第二の接地電極とを電気的に接続すると共に、該信号電極から離間して配置された導電部が形成されていることを特徴とする。
In order to solve the above problems, the optical modulator of the present invention has the following technical features.
(1) Electrically connecting a substrate, an optical waveguide formed on the upper surface of the substrate, a control electrode for controlling a light wave propagating through the optical waveguide, and the high-frequency line outside the substrate In the optical modulator having an electrical connection portion to be connected, the control electrode includes a signal electrode and a first ground electrode and a second ground electrode arranged so as to sandwich the signal electrode. On the side surface on which the electrical connection portion is disposed, a conductive portion is formed that electrically connects the first ground electrode and the second ground electrode and is spaced apart from the signal electrode. It is characterized by.

(2) 上記(1)に記載の光変調器において、該導電部の近傍における前記第一の接地電極と前記第二の接地電極との間隔W1は、該導電部と各接地電極とが電気的に接続した位置の間隔wと同じかそれ以下に設定されていることを特徴とする。 (2) In the optical modulator described in (1) above, the interval W1 between the first ground electrode and the second ground electrode in the vicinity of the conductive portion is such that the conductive portion and each ground electrode are electrically connected. It is characterized in that it is set to be equal to or less than the interval w between the connected positions.

(3) 上記(1)又は(2)に記載の光変調器において、該高周波線路は、該信号電極と電気的に接続される信号導体と、該信号導体を挟むように配置され、前記第一及び第二の接地電極に電気的に接続される接地導体から構成され、該信号導体を挟んだ該接地導体の間隔W2は、該導電部と各接地電極とが電気的に接続した位置の間隔wと同じかそれ以下に設定されていることを特徴とする。 (3) In the optical modulator according to (1) or (2), the high-frequency line is disposed so as to sandwich a signal conductor electrically connected to the signal electrode, and the signal conductor. The ground conductor is electrically connected to the first and second ground electrodes, and the distance W2 between the ground conductors sandwiching the signal conductor is the position where the conductive portion and each ground electrode are electrically connected. It is characterized by being set to be equal to or less than the interval w.

(4) 上記(1)乃至(3)のいずれかに記載の光変調器において、該電気接続部は、内部応力の発生を抑制する電気的接続手段を用いて該高周波線路と接続するよう構成されていることを特徴とする。 (4) In the optical modulator according to any one of (1) to (3), the electrical connection portion is configured to be connected to the high-frequency line using an electrical connection means that suppresses generation of internal stress. It is characterized by being.

(5) 上記(1)乃至(4)に記載の光変調器において、該基板は焦電効果を有する材料で構成されていることを特徴とする。 (5) The optical modulator according to any one of (1) to (4), wherein the substrate is made of a material having a pyroelectric effect.

本発明は、基板と、該基板の上面側に形成された光導波路と、該光導波路を伝播する光波を制御するための制御電極と、該制御電極と該基板外の高周波線路とを電気的に接続する電気接続部とを有する光変調器において、該制御電極は、信号電極と該信号電極を挟むように配置された第一の接地電極と第二の接地電極から構成され、該基板で該電気接続部が配置される側の側面には、前記第一の接地電極と前記第二の接地電極とを電気的に接続すると共に、該信号電極から離間して配置された導電部が形成されているため、電気的接続の前後の電界分布が乱れずに接続でき、高周波応答が劣化することを抑制することが可能となる。   The present invention electrically connects a substrate, an optical waveguide formed on the upper surface of the substrate, a control electrode for controlling a light wave propagating through the optical waveguide, and the high-frequency line outside the substrate. The control electrode comprises a signal electrode, a first ground electrode and a second ground electrode arranged so as to sandwich the signal electrode, and the substrate includes: On the side surface on which the electrical connection portion is disposed, a conductive portion is formed that electrically connects the first ground electrode and the second ground electrode and is spaced apart from the signal electrode. Therefore, the electric field distribution before and after the electrical connection can be connected without being disturbed, and the high frequency response can be prevented from deteriorating.

特に、以下の(a)又は(b)に示す条件に設定することで、上述した効果はより顕著となる。
(a) 該導電部の近傍における前記第一の接地電極と前記第二の接地電極との間隔W1は、該導電部と各接地電極とが電気的に接続した位置の間隔wと同じかそれ以下に設定されていること。
(b) 該高周波線路は、該信号電極と電気的に接続される信号導体と、該信号導体を挟むように配置され、前記第一及び第二の接地電極に電気的に接続される接地導体から構成され、該信号導体を挟んだ該接地導体の間隔W2は、該導電部と各接地電極とが電気的に接続した位置の間隔wと同じかそれ以下に設定されていること。
In particular, the effects described above become more remarkable by setting the conditions shown in the following (a) or (b).
(A) The interval W1 between the first ground electrode and the second ground electrode in the vicinity of the conductive portion is equal to or equal to the interval w between the conductive portion and each ground electrode. Must be set to:
(B) The high-frequency line is a signal conductor that is electrically connected to the signal electrode, and a ground conductor that is disposed so as to sandwich the signal conductor and is electrically connected to the first and second ground electrodes. The interval W2 between the ground conductors sandwiching the signal conductor is set to be equal to or less than the interval w at the position where the conductive portion and each ground electrode are electrically connected.

また、本発明の光変調器において、該電気接続部は、内部応力の発生を抑制する電気的接続手段を用いて該高周波線路と接続するよう構成することで、基板自体に内部応力が加わることが無く、光変調器のバイアス点のシフトも抑制することが可能となる。   In the optical modulator of the present invention, the electrical connection portion is configured to be connected to the high-frequency line using an electrical connection means that suppresses the generation of internal stress, whereby internal stress is applied to the substrate itself. Therefore, it is possible to suppress the shift of the bias point of the optical modulator.

さらに、該基板が焦電効果を有する材料で構成されている場合でも、基板の両側面等には接地電極が形成されているため、焦電効果の発生を効果的に抑制することが可能となる。   Furthermore, even when the substrate is made of a material having a pyroelectric effect, since the ground electrode is formed on both side surfaces of the substrate, the generation of the pyroelectric effect can be effectively suppressed. Become.

本発明の光変調器に用いられる基板(チップ)の一例を示す斜視図である。It is a perspective view which shows an example of the board | substrate (chip) used for the optical modulator of this invention. 本発明の光変調器に用いられる光変調器モジュールの一例を示す平面図である。It is a top view which shows an example of the optical modulator module used for the optical modulator of this invention. 基板上の制御電極と基板外の高周波線路とを接続する電気接続部の一例を示す平面図である。It is a top view which shows an example of the electrical connection part which connects the control electrode on a board | substrate, and the high frequency line outside a board | substrate. 図3の基板1の側面の様子を説明する図である。It is a figure explaining the mode of the side surface of the board | substrate 1 of FIG. 光変調器の周波数特性を示すグラフである。It is a graph which shows the frequency characteristic of an optical modulator.

以下、本発明の光変調器について、好適例を用いて詳細に説明する。
本発明の光変調器は、図1に示すように、基板と、該基板の上面側に形成された光導波路(不図示)と、該光導波路を伝播する光波を制御するための制御電極(2,31,32)と、該制御電極と該基板外の高周波線路(不図示)とを電気的に接続する電気接続部とを有する光変調器において、該制御電極は、信号電極2と該信号電極を挟むように配置された第一の接地電極31と第二の接地電極32から構成され、該基板で該電気接続部が配置される側の側面には、前記第一の接地電極と前記第二の接地電極とを電気的に接続すると共に、該信号電極2から離間して配置された導電部40が形成されていることを特徴とする。
Hereinafter, the optical modulator of the present invention will be described in detail using preferred examples.
As shown in FIG. 1, the optical modulator of the present invention includes a substrate, an optical waveguide (not shown) formed on the upper surface side of the substrate, and a control electrode (for controlling a light wave propagating through the optical waveguide). 2, 31, 32) and an electrical modulator that electrically connects the control electrode and a high-frequency line (not shown) outside the substrate, the control electrode includes the signal electrode 2 and the signal electrode 2 The first ground electrode 31 and the second ground electrode 32 are disposed so as to sandwich the signal electrode, and the side surface of the substrate on which the electrical connection portion is disposed has the first ground electrode and A conductive portion 40 is formed which is electrically connected to the second ground electrode and is spaced apart from the signal electrode 2.

本発明の光変調器に用いる基板は、LiNbO,LiTaO又はPLZT(ジルコン酸チタン酸鉛ランタン)のいずれかの単結晶など、電気光学効果を有する基板が好適に利用可能である。特に、光変調器などの光制御素子で多用されているLiNbO,LiTaOが、好ましい。これらの基板は焦電効果が発生し易いため、特許文献4に示すように、基板の表面に形成した制御電極だけでなく、基板の側面や裏面などにも焦電効果を抑制するための導電膜を形成することが好ましい。 As the substrate used in the optical modulator of the present invention, a substrate having an electro-optic effect such as a single crystal of any one of LiNbO 3 , LiTaO 5 or PLZT (lead lanthanum zirconate titanate) can be suitably used. In particular, LiNbO 3 and LiTaO 5 frequently used in light control elements such as an optical modulator are preferable. Since these substrates are prone to the pyroelectric effect, as shown in Patent Document 4, not only the control electrodes formed on the surface of the substrate, but also the conductivity for suppressing the pyroelectric effect on the side surface and back surface of the substrate. It is preferable to form a film.

基板には光導波路が形成されている。基板に形成する光導波路は、例えば、LiNbO基板(LN基板)上にチタン(Ti)などを熱拡散することにより形成される。また、基板に光導波路に沿った凹凸を形成したリッジ型光導波路も利用可能である。光導波路のパターン形状としてはマッハツェンダー型導波路や複数のマッハツェンダー型導波路を組み合わせたネスト型導波路など、光変調器の用途に応じて種々の形状を採用することが可能である。 An optical waveguide is formed on the substrate. The optical waveguide formed on the substrate is formed, for example, by thermally diffusing titanium (Ti) or the like on a LiNbO 3 substrate (LN substrate). A ridge-type optical waveguide in which irregularities along the optical waveguide are formed on the substrate can also be used. As the pattern shape of the optical waveguide, various shapes such as a Mach-Zehnder type waveguide and a nested waveguide obtained by combining a plurality of Mach-Zehnder type waveguides can be adopted depending on the use of the optical modulator.

制御電極は、図1に示すように、信号電極2や接地電極(31,32)から構成され、基板表面に、Ti・Auの電極パターンを形成し、金メッキ方法などにより形成することが可能である。さらに、必要に応じて光導波路形成後の基板表面に誘電体SiO等のバッファ層を設け、該バッファ層の上側に制御電極を形成することも可能である。信号電極は、図1に示すように1本の信号電極に限られるものではなく、光導波路の変調領域が複数ある場合には、その数に対応して、複数の信号電極を設けることが可能である。 As shown in FIG. 1, the control electrode is composed of a signal electrode 2 and a ground electrode (31, 32). A Ti / Au electrode pattern is formed on the substrate surface, and can be formed by a gold plating method or the like. is there. Furthermore, if necessary, a buffer layer such as a dielectric SiO 2 may be provided on the substrate surface after the optical waveguide is formed, and a control electrode may be formed above the buffer layer. As shown in FIG. 1, the signal electrode is not limited to one signal electrode. When there are a plurality of modulation regions of the optical waveguide, a plurality of signal electrodes can be provided corresponding to the number of modulation regions. It is.

本発明の光変調器の特徴は、高周波特性の向上や焦電効果の抑制を行うため、図1に示すように、基板の側面や裏面にも導電膜(40,42)を形成している。従来は、特許文献2又は3に示すように、制御電極と基板外の高周波線路とを電気的に接続する電気接続部が配置される側の基板の側面に、全体に渡って導電膜を設けたり、信号電極の接続パッドが形成される位置に対応する側面部分には、導電膜を形成しないように設定していた。   The optical modulator of the present invention is characterized in that conductive films (40, 42) are also formed on the side and back surfaces of the substrate as shown in FIG. 1 in order to improve the high frequency characteristics and suppress the pyroelectric effect. . Conventionally, as shown in Patent Document 2 or 3, a conductive film is provided on the entire side surface of the substrate on which the electrical connection portion for electrically connecting the control electrode and the high-frequency line outside the substrate is disposed. Alternatively, the conductive film is not formed on the side surface portion corresponding to the position where the connection pad of the signal electrode is formed.

本発明では、図1示すように、信号電極2と該信号電極を挟むように配置された第一の接地電極31と第二の接地電極32に対し、側面の導電部40は、前記第一の接地電極31と前記第二の接地電極32とを電気的に接続すると共に、該信号電極2から離間して配置されている。信号電極2の近傍には、導電部40が形成されない領域41が存在するが、当該側面内では、第一の接地電極31と第二の接地電極32とを電気的に接続する部分(領域41の下側)が形成されている。   In the present invention, as shown in FIG. 1, with respect to the first ground electrode 31 and the second ground electrode 32 arranged so as to sandwich the signal electrode 2 and the signal electrode, the conductive portion 40 on the side surface has the first electrode The ground electrode 31 and the second ground electrode 32 are electrically connected and spaced apart from the signal electrode 2. In the vicinity of the signal electrode 2, there is a region 41 where the conductive portion 40 is not formed. However, in the side surface, a portion (region 41) that electrically connects the first ground electrode 31 and the second ground electrode 32. Lower side) is formed.

本発明のように、基板の側面に形成する導電部40に、導電部を形成しない領域41を設けると共に、2つの接地電極を電気的に接続する部分も設けることで、制御電極と高周波線路との電気的接続の前後において、電界部分布が乱れずに接続され、信号線と側面GND部間の寄生容量の発生を抑制することができる。これにより、光変調器の高周波特性をより向上させることが可能となる。   As in the present invention, the conductive portion 40 formed on the side surface of the substrate is provided with the region 41 where the conductive portion is not formed and also provided with a portion for electrically connecting the two ground electrodes, so that the control electrode, the high frequency line, Before and after the electrical connection, the electric field portion distribution is connected without disturbance, and the generation of parasitic capacitance between the signal line and the side surface GND portion can be suppressed. Thereby, it is possible to further improve the high frequency characteristics of the optical modulator.

基板側面の導電部40は、基板裏面に形成した導電膜と基板側面と基板裏面とのエッジ部分を介して電気的に接続することで、筐体GNDと電気的に接続される、もしくは、基板側面の下部の一部分と筐体GNDと電気的に接続されることにより、筺体GNDとの接続が強固になり高周波特性が更に改善する役割も果たす。さらに、側面の導電部が信号電極の両側に配置された接地電極を短距離で接続する役割も担っているため、後述するようにワイヤーボンディングなどの電気的接続手段を用いた場合においても、10GHzを超える高周波域でも良好な特性を得ることができ、高周波特性に優れた光変調器を得ることができる。特に、基板の厚みが信号電極と接地電極との間隔(接続パッド付近における両者の間隔)よりも大きくなる場合には、この導電部40による各接地電極の電気的接続により、高周波特性はより高くなる。   The conductive portion 40 on the side surface of the substrate is electrically connected to the housing GND by being electrically connected via the conductive film formed on the back surface of the substrate and the edge portion between the side surface of the substrate and the back surface of the substrate. By being electrically connected to a part of the lower part of the side surface and the housing GND, the connection to the housing GND is strengthened and the high frequency characteristics are further improved. Furthermore, since the conductive portion on the side surface also plays a role of connecting the ground electrodes arranged on both sides of the signal electrode at a short distance, even when using an electrical connection means such as wire bonding as described later, 10 GHz Therefore, good characteristics can be obtained even in a high frequency range exceeding 1, and an optical modulator excellent in high frequency characteristics can be obtained. In particular, when the thickness of the substrate is larger than the distance between the signal electrode and the ground electrode (the distance between both in the vicinity of the connection pad), the high frequency characteristics are higher due to the electrical connection of the ground electrodes by the conductive portion 40. Become.

導電部40の形成方法としては、ウェハ状の基板に光導波路や金メッキなどによる制御電極を形成した後、ウェハ基板をチップ形状に切断する。その後、チップの側面に蒸着などの成膜法やメッキ法により導電体(40)を形成する。除去部41は、導電体形成前にレジストなどでマスキングすることにより形成できる。また、導電体形成後、加工により除去してもよい。また、除去部41の形状を、図1では半円形状としたが、除去部の形状はこれに限らず矩形や多角形であっても良い。   As a method for forming the conductive portion 40, after forming a control electrode by an optical waveguide or gold plating on a wafer-like substrate, the wafer substrate is cut into a chip shape. Thereafter, the conductor (40) is formed on the side surface of the chip by a film forming method such as vapor deposition or a plating method. The removal portion 41 can be formed by masking with a resist or the like before forming the conductor. Further, after forming the conductor, it may be removed by processing. Moreover, although the shape of the removal part 41 was made into semicircle shape in FIG. 1, the shape of a removal part is not restricted to this, A rectangle and a polygon may be sufficient.

図2は、図1の光変調器のチップ1を筐体10に組み込んだ光変調器モジュールを示している。チップに形成された光導波路(不図示)の入出力部に対応して、光ファイバ(91,92)が接続されている。図2では、光変調器の制御電極については、信号電極(2,21,22)のみを簡略化して示している。符号21,22は信号電極の接続パッドを示している。   FIG. 2 shows an optical modulator module in which the chip 1 of the optical modulator of FIG. Optical fibers (91, 92) are connected corresponding to input / output portions of an optical waveguide (not shown) formed on the chip. In FIG. 2, only the signal electrodes (2, 21, 22) are shown in a simplified manner as the control electrodes of the optical modulator. Reference numerals 21 and 22 denote connection pads for signal electrodes.

図2では、チップ1上の制御電極の入力側には、高周波線路を具備した中継基板6とRFコネクタ部5が直接、電気的に接続されている。RFコネクタ部の中心導体51は、スライディングコンタクトやワイヤーボンディング等を利用して、中継基板の信号導体61に接続され、信号導体61と信号電極の接続パッド21とは、ワイヤーボンディング81で接続されている。RFコネクタ部の周辺導体である接地部と中継基板の接地導体(不図示)、また接地導体とチップ1の接地電極とも、ワイヤーボンディング等で接続されている。   In FIG. 2, the relay substrate 6 having a high-frequency line and the RF connector portion 5 are directly and electrically connected to the input side of the control electrode on the chip 1. The center conductor 51 of the RF connector portion is connected to the signal conductor 61 of the relay board using sliding contact, wire bonding, or the like, and the signal conductor 61 and the signal electrode connection pad 21 are connected by the wire bonding 81. Yes. The grounding part, which is a peripheral conductor of the RF connector part, and the grounding conductor (not shown) of the relay board, and the grounding conductor and the grounding electrode of the chip 1 are connected by wire bonding or the like.

図2では、中継基板6を用いたが、本発明はこれに限らず、RFコネクタ部5をチップ1の制御電極に直接に電気的接続することも可能である。中継基板やRFコネクタ部などの高周波線路とチップ上の制御電極とを接続する電気接続部は、チップ1の基板に熱膨張などによる内部応力の発生を抑制するよう構成することが好ましい。具体的には、ワイヤーボンディングや導電性リボンなどの可撓性のある材料で接続することが好ましい。また、スライディングコンタクトやはんだなどのように、チップ1とRFコネクタ部5又は筐体10とを強固に固定する場合には、固定箇所は1箇所(制御電極の入力部又は出力部のいずれか)とし、特許文献2のように複数固定した場合の内部応力が発生する弊害を避けることが好ましい。   Although the relay board 6 is used in FIG. 2, the present invention is not limited to this, and the RF connector portion 5 can be directly electrically connected to the control electrode of the chip 1. It is preferable that the electrical connection portion that connects the high-frequency line such as the relay substrate or the RF connector portion and the control electrode on the chip is configured to suppress the generation of internal stress due to thermal expansion or the like on the substrate of the chip 1. Specifically, it is preferable to connect with a flexible material such as wire bonding or a conductive ribbon. Further, when the chip 1 and the RF connector portion 5 or the housing 10 are firmly fixed, such as a sliding contact or solder, the fixing location is one location (either the input portion or the output portion of the control electrode). Thus, it is preferable to avoid the adverse effect of generating internal stress when a plurality of fixings are performed as in Patent Document 2.

信号電極の出力用接続パッド22には、終端基板7がワイヤーボンディング82を介して接続されている。必要に応じて、制御電極の出力側にもRFコネクタ部を配置すること可能である。   The termination substrate 7 is connected to the output connection pad 22 of the signal electrode via a wire bonding 82. If necessary, an RF connector part can also be arranged on the output side of the control electrode.

図3は、図2の入力側接続部A又は出力側接続部Bの様子を示した図である。
本発明の光変調器では、図3に示す制御電極を構成する第一の接地電極31と第二の接地電極32との間隔W1は、図4に示す導電部40と各接地電極(31,32)とが接続した位置の間隔wと同じかそれ以下に設定されている。
FIG. 3 is a diagram showing a state of the input side connection part A or the output side connection part B of FIG.
In the optical modulator of the present invention, the interval W1 between the first ground electrode 31 and the second ground electrode 32 constituting the control electrode shown in FIG. 3 is set to the conductive portion 40 and each ground electrode (31, 31) shown in FIG. 32) is set to be equal to or less than the interval w between the connected positions.

また、図3に示す高周波線路は、信号電極2と電気的に接続される信号導体61と、該信号導体を挟むように配置され、前記第一及び第二の接地電極(31,32)に電気的に接続される接地導体(62,63)から構成され、該信号導体を挟んだ該接地導体の間隔W2は、図4に示す導電部40と各接地電極(31,32)とが接続した位置の間隔wと同じかそれ以下に設定されている。   Further, the high-frequency line shown in FIG. 3 is disposed so as to sandwich the signal conductor 61 electrically connected to the signal electrode 2 and the first and second ground electrodes (31, 32). It is composed of electrically connected ground conductors (62, 63), and the distance W2 between the ground conductors sandwiching the signal conductor is connected between the conductive portion 40 and each ground electrode (31, 32) shown in FIG. It is set to be equal to or less than the interval w between the positions.

図3及び4で説明した関係(w≧W1又はw≧W2)を満足することで、電気接続部における接続前後の電界部分布がスムーズに接続され、信号線と側面GND部間の寄生容量の発生をより一層抑制することができる。   By satisfying the relationship described with reference to FIGS. 3 and 4 (w ≧ W1 or w ≧ W2), the electric field portion distribution before and after connection in the electrical connection portion is smoothly connected, and the parasitic capacitance between the signal line and the side GND portion is reduced. Generation | occurrence | production can be suppressed further.

図5は、図4に示すように基板側面の導電部40に導電部除去領域41を設けた場合(本発明)と、当該導電部除去領域を設けない場合(全面金属)の周波数特性を示したグラフである。入力側接続部は、RFコネクタ部と接続し、出力側接続部は、高周波基板で構成された終端基板と接続した。導電部除去領域の形状は図1に示した半円形で、作成したサンプルの導電部除去領域の幅wは、w1、w2に対して1.1〜2倍の範囲とした。   FIG. 5 shows frequency characteristics when the conductive portion removal region 41 is provided on the conductive portion 40 on the side surface of the substrate as shown in FIG. 4 (the present invention) and when the conductive portion removal region is not provided (entire metal). It is a graph. The input side connection portion was connected to the RF connector portion, and the output side connection portion was connected to a termination substrate composed of a high frequency substrate. The shape of the conductive part removal region is the semicircular shape shown in FIG. 1, and the width w of the conductive part removal region of the prepared sample is set to a range of 1.1 to 2 times w1 and w2.

図5を見ると、図1のような導電部40を備えた場合には、ディップ等のない滑らかな周波数応答が得られていることがわかる。   As can be seen from FIG. 5, when the conductive portion 40 as shown in FIG. 1 is provided, a smooth frequency response without dip is obtained.

以上、説明したように、本発明によれば、高周波特性を改善し、焦電効果を抑制できる光変調器を提供することが可能となる。さらに、光変調器を構成する基板への内部応力の発生も抑制した光変調器を提供することができる。   As described above, according to the present invention, it is possible to provide an optical modulator that can improve high-frequency characteristics and suppress the pyroelectric effect. Furthermore, it is possible to provide an optical modulator that suppresses the generation of internal stress on the substrate constituting the optical modulator.

1 チップ(光変調素子)
2 信号電極
31,32 接地電極
40,42 導電部
41 導電体除去領域
5 RFコネクタ部
6 中継基板
7 終端基板
9 導波路
10 筐体
1 chip (light modulation element)
2 Signal electrode 31, 32 Ground electrode 40, 42 Conductive part 41 Conductor removal region 5 RF connector part 6 Relay substrate 7 Termination substrate 9 Waveguide 10 Housing

Claims (5)

基板と、該基板の上面側に形成された光導波路と、該光導波路を伝播する光波を制御するための制御電極と、該制御電極と該基板外の高周波線路とを電気的に接続する電気接続部とを有する光変調器において、
該制御電極は、信号電極と該信号電極を挟むように配置された第一の接地電極と第二の接地電極から構成され、
該基板で該電気接続部が配置される側の側面には、前記第一の接地電極と前記第二の接地電極とを電気的に接続すると共に、該信号電極から離間して配置された導電部が形成されていることを特徴とする光変調器。
A substrate, an optical waveguide formed on the upper surface of the substrate, a control electrode for controlling a light wave propagating through the optical waveguide, and an electrical connection electrically connecting the control electrode and a high-frequency line outside the substrate In an optical modulator having a connection part,
The control electrode is composed of a signal electrode and a first ground electrode and a second ground electrode arranged so as to sandwich the signal electrode,
The first ground electrode and the second ground electrode are electrically connected to the side surface of the substrate on which the electrical connection portion is disposed, and the conductive material is disposed away from the signal electrode. An optical modulator characterized in that a portion is formed.
請求項1に記載の光変調器において、該導電部の近傍における前記第一の接地電極と前記第二の接地電極との間隔W1は、該導電部と各接地電極とが電気的に接続した位置の間隔wと同じかそれ以下に設定されていることを特徴とする光変調器。   2. The optical modulator according to claim 1, wherein a gap W <b> 1 between the first ground electrode and the second ground electrode in the vicinity of the conductive portion is such that the conductive portion and each ground electrode are electrically connected. An optical modulator characterized by being set to be equal to or less than the position interval w. 請求項1又は2に記載の光変調器において、該高周波線路は、該信号電極と電気的に接続される信号導体と、該信号導体を挟むように配置され、前記第一及び第二の接地電極に電気的に接続される接地導体から構成され、該信号導体を挟んだ該接地導体の間隔W2は、該導電部と各接地電極とが電気的に接続した位置の間隔wと同じかそれ以下に設定されていることを特徴とする光変調器。   3. The optical modulator according to claim 1, wherein the high-frequency line is disposed so as to sandwich a signal conductor electrically connected to the signal electrode, and the first and second grounds. The ground conductor is electrically connected to the electrode, and the distance W2 between the ground conductors sandwiching the signal conductor is equal to or equal to the distance w between the conductive portion and each ground electrode. An optical modulator having the following settings. 請求項1乃至3のいずれかに記載の光変調器において、該電気接続部は、内部応力の発生を抑制する電気的接続手段を用いて該高周波線路と接続するよう構成されていることを特徴とする光変調器。   4. The optical modulator according to claim 1, wherein the electrical connection portion is configured to be connected to the high-frequency line using an electrical connection means that suppresses generation of internal stress. 5. An optical modulator. 請求項1乃至4に記載の光変調器において、該基板は焦電効果を有する材料で構成されていることを特徴とする光変調器。   5. The optical modulator according to claim 1, wherein the substrate is made of a material having a pyroelectric effect.
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