JP2015537188A - 高周波モジュール - Google Patents
高周波モジュール Download PDFInfo
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- JP2015537188A JP2015537188A JP2015532474A JP2015532474A JP2015537188A JP 2015537188 A JP2015537188 A JP 2015537188A JP 2015532474 A JP2015532474 A JP 2015532474A JP 2015532474 A JP2015532474 A JP 2015532474A JP 2015537188 A JP2015537188 A JP 2015537188A
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- 238000006073 displacement reaction Methods 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 141
- 239000000758 substrate Substances 0.000 claims description 99
- 239000004593 Epoxy Substances 0.000 claims description 57
- 239000000463 material Substances 0.000 claims description 32
- 239000011247 coating layer Substances 0.000 claims description 16
- 238000001514 detection method Methods 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 42
- 229910052710 silicon Inorganic materials 0.000 description 42
- 239000010703 silicon Substances 0.000 description 42
- LAXBNTIAOJWAOP-UHFFFAOYSA-N 2-chlorobiphenyl Chemical compound ClC1=CC=CC=C1C1=CC=CC=C1 LAXBNTIAOJWAOP-UHFFFAOYSA-N 0.000 description 39
- 101710149812 Pyruvate carboxylase 1 Proteins 0.000 description 36
- 238000004519 manufacturing process Methods 0.000 description 29
- AGCPZMJBXSCWQY-UHFFFAOYSA-N 1,1,2,3,4-pentachlorobutane Chemical compound ClCC(Cl)C(Cl)C(Cl)Cl AGCPZMJBXSCWQY-UHFFFAOYSA-N 0.000 description 21
- 239000000853 adhesive Substances 0.000 description 9
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- 239000011159 matrix material Substances 0.000 description 9
- 238000000034 method Methods 0.000 description 9
- 230000005855 radiation Effects 0.000 description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 229920001342 Bakelite® Polymers 0.000 description 3
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- 238000005476 soldering Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/03—Details of HF subsystems specially adapted therefor, e.g. common to transmitter and receiver
- G01S7/032—Constructional details for solid-state radar subsystems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/48—Earthing means; Earth screens; Counterpoises
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/12—Supports; Mounting means
- H01Q1/22—Supports; Mounting means by structural association with other equipment or articles
- H01Q1/2283—Supports; Mounting means by structural association with other equipment or articles mounted in or on the surface of a semiconductor substrate as a chip-type antenna or integrated with other components into an IC package
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/36—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
- H01Q1/38—Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith formed by a conductive layer on an insulating support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q1/00—Details of, or arrangements associated with, antennas
- H01Q1/42—Housings not intimately mechanically associated with radiating elements, e.g. radome
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q15/00—Devices for reflection, refraction, diffraction or polarisation of waves radiated from an antenna, e.g. quasi-optical devices
- H01Q15/02—Refracting or diffracting devices, e.g. lens, prism
- H01Q15/08—Refracting or diffracting devices, e.g. lens, prism formed of solid dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/06—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using refracting or diffracting devices, e.g. lens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q19/00—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic
- H01Q19/10—Combinations of primary active antenna elements and units with secondary devices, e.g. with quasi-optical devices, for giving the antenna a desired directional characteristic using reflecting surfaces
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/0087—Apparatus or processes specially adapted for manufacturing antenna arrays
- H01Q21/0093—Monolithic arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01Q—ANTENNAS, i.e. RADIO AERIALS
- H01Q21/00—Antenna arrays or systems
- H01Q21/06—Arrays of individually energised antenna units similarly polarised and spaced apart
- H01Q21/061—Two dimensional planar arrays
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/02—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S13/00
- G01S7/027—Constructional details of housings, e.g. form, type, material or ruggedness
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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- Engineering & Computer Science (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Radar Systems Or Details Thereof (AREA)
- Variable-Direction Aerials And Aerial Arrays (AREA)
- Aerials With Secondary Devices (AREA)
- Details Of Aerials (AREA)
- Transceivers (AREA)
Abstract
Description
‐所望の周波数帯域で電磁信号を送信すること、及び所望の周波数帯域で電磁信号を受信することの少なくとも1つを実行するように設けられた半導体集積回路におけるアンテナアセンブリと、
‐信号グランドプレーンを形成する導電層と、
‐アンテナアセンブリと信号グランドプレーンを形成する導電層との間の誘電体スペーシングとを備え、半導体集積回路の少なくとも1つの半導体層は、誘電体スペーシングの部分を形成し、誘電体スペーシングは、アンテナアセンブリから信号グランドプレーンを形成する導電層を通過する所望の周波数帯域における電磁信号が60°〜120°の範囲に含まれる位相変位を受けるように設けられている高周波モジュールを提供する。
d2は基板の厚みを示し、
er1は少なくとも1つの半導体層の誘電率を示し、
er2は基板の誘電率を示し、
λは所望の周波数帯域における周波数での自由空間波長を示し、
厚みd1及び厚みd2は、実効誘電体厚みdtot/λが0.22〜0.28の範囲に含まれるように決定される。
上述の図面を参照した詳細な説明は、単に特許請求の範囲で定義した本発明及び追加の特徴の説明である。本発明は、多くの異なる方法で実施することができる。これを説明するために、いくつかの代替案を簡単に示す。
‐所望の周波数帯域で電磁信号を送信すること、及び所望の周波数帯域で電磁信号を受信することの少なくとも1つを実行するように設けられた半導体集積回路におけるアンテナアセンブリと、
‐信号グランドプレーンを形成する導電層と、
‐アンテナアセンブリと信号グランドプレーンを形成する導電層との間の誘電体スペーシングとを備え、誘電体スペーシングは、半導体集積回路の少なくとも1つの半導体層を含み、誘電体スペーシングは、アンテナアセンブリから信号グランドプレーンを形成する導電層を通過する所望の周波数帯域における電磁信号が60°〜120°の範囲に含まれる位相変位を受けるように設けられており、
‐誘電体スペーシングは、半導体集積回路が実装されたプリント基板様の基板を含み、信号グランドプレーンを形成する導電層は、プリント基板様の基板における半導体集積回路が実装された側と反対側に設けられている高周波モジュールを提供する。
d2は基板の厚みを示し、
er1は少なくとも1つの半導体層の誘電率を示し、
er2は基板の誘電率を示し、
λは所望の周波数帯域における周波数での自由空間波長を示し、
厚みd1及び厚みd2は、実効誘電体厚みdtot/λが0.22〜0.28の範囲に含まれるように決定される。
上述の図面を参照した詳細な説明は、単に特許請求の範囲で定義した本発明及び追加の特徴の説明である。本発明は、多くの異なる方法で実施することができる。これを説明するために、いくつかの代替案を簡単に示す。
‐所望の周波数帯域で電磁信号を送信すること、及び所望の周波数帯域で電磁信号を受信することの少なくとも1つを実行するように設けられた半導体集積回路におけるアンテナアセンブリと、
‐信号グランドプレーンを形成する導電層と、
‐アンテナアセンブリと信号グランドプレーンを形成する導電層との間の誘電体スペーシングとを備え、誘電体スペーシングは、半導体集積回路の少なくとも1つの半導体層と、半導体集積回路が実装されたプリント基板とを含み、信号グランドプレーンを形成する導電層は、プリント基板様の基板における半導体集積回路が実装された側と反対側に設けられており、
アンテナアセンブリから信号グランドプレーンを形成する導電層を通過する所望の周波数帯域における電磁信号が60°〜120°の範囲に含まれる位相変位を受けるように設けられている高周波モジュールを提供する。
d2はプリント基板の厚みを示し、
er1は少なくとも1つの半導体層の誘電率を示し、
er2はプリント基板の誘電率を示し、
λは所望の周波数帯域における周波数での自由空間波長を示し、
厚みd1及び厚みd2は、実効誘電体厚みdtot/λが0.22〜0.28の範囲に含まれるように決定される。
上述の図面を参照した詳細な説明は、単に特許請求の範囲で定義した本発明及び追加の特徴の説明である。本発明は、多くの異なる方法で実施することができる。これを説明するために、いくつかの代替案を簡単に示す。
Claims (13)
- 所望の周波数帯域で電磁信号を送信すること、及び所望の周波数帯域で電磁信号を受信することの少なくとも1つを実行するように設けられた半導体集積回路(3)におけるアンテナアセンブリ(4)と、
信号グランドプレーン(8)を形成する導電層と、
前記アンテナアセンブリと前記信号グランドプレーンを形成する前記導電層との間の誘電体スペーシング(d1、d2)とを備え、
前記半導体集積回路の少なくとも1つの半導体層(d1)は、前記誘電体スペーシングの部分を形成し、前記誘電体スペーシングは、前記アンテナアセンブリから前記信号グランドプレーンを形成する前記導電層を通過する所望の周波数帯域における電磁信号が60°〜120°の範囲に含まれる位相変位を受けるように設けられていることを特徴とする高周波モジュール。 - 前記誘電体スペーシング(d1、d2)は、前記半導体集積回路(3)が実装された基板(1)を含むことを特徴とする請求項1に記載の高周波モジュール。
- 前記信号グランドプレーンを形成する前記導電層(8)は、前記基板(1)における前記半導体集積回路(3)が実装された側と反対側に設けられていることを特徴とする請求項2に記載の高周波モジュール。
- 前記誘電体スペーシング(d1、d2)は、下記数式で表される実効誘電体厚みdtot/λを有し、
d2は前記基板(1)の厚みを示し、
er1は前記少なくとも1つの半導体層の誘電率を示し、
er2は前記基板の誘電率を示し、
λは前記所望の周波数帯域における周波数での自由空間波長を示す。)
前記厚みd1及び厚みd2は、前記実効誘電体厚みdtot/λが0.22〜0.28の範囲に含まれる範囲にあることを特徴とする請求項3に記載の高周波モジュール。 - 前記基板(1)は、エポキシ材料を含むことを特徴とする請求項2〜4のいずれか1項に記載の高周波モジュール。
- 前記エポキシ材料は、FR4、RO4003及びRO4350(RO4003及びRO4350はRogers Corporationの商標)のいずれか一つの型であることを特徴とする請求項5に記載の高周波モジュール。
- 前記基板(1)は、半導体集積回路(3)を、信号グランドプレーンを形成する導電層(8)に電気的に接続するために設けられた少なくとも1つの導電ビア(9)を含むことを特徴とする請求項3〜6のいずれか1項に記載の高周波モジュール。
- 前記アンテナアセンブリ(4)に設けられた被覆層(2)をさらに備えていることを特徴とする請求項1〜7のいずれか1項に記載の高周波モジュール。
- 前記被覆層(2)は、該被覆層が前記所望の周波数帯域における電磁信号のための電磁レンズを構成するような形状を有することを特徴とする請求項8に記載の高周波モジュール。
- 前記被覆層(2)は、傾斜した縁部を含むことを特徴とする請求項9に記載の高周波モジュール。
- 前記被覆層(2)は、エポキシ材料を含むことを特徴とする請求項8〜10のいずれか1項に記載の高周波モジュール。
- 前記半導体集積回路(3)は、レーダ探知を実行するために設けられていることを特徴とする請求項1〜11のいずれか1項に記載の高周波モジュール。
- プリント基板に表面実装するのに適合されることを特徴とする請求項1〜12のいずれか1項に記載の高周波モジュール。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201261705646P | 2012-09-26 | 2012-09-26 | |
US61/705,646 | 2012-09-26 | ||
PCT/EP2013/070128 WO2014049088A1 (en) | 2012-09-26 | 2013-09-26 | Radiofrequency module |
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JP2015537188A true JP2015537188A (ja) | 2015-12-24 |
JP6058144B2 JP6058144B2 (ja) | 2017-01-11 |
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JP2015532474A Active JP6058144B2 (ja) | 2012-09-26 | 2013-09-26 | 高周波モジュール |
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US (1) | US9614277B2 (ja) |
EP (1) | EP2901523B1 (ja) |
JP (1) | JP6058144B2 (ja) |
WO (1) | WO2014049088A1 (ja) |
Cited By (2)
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WO2022185900A1 (ja) * | 2021-03-05 | 2022-09-09 | 株式会社村田製作所 | アンテナモジュール |
WO2023171093A1 (ja) * | 2022-03-10 | 2023-09-14 | Towa株式会社 | 磁性楔の製造方法 |
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NL1040185C2 (en) | 2013-04-26 | 2014-10-29 | Omniradar B V | Horn-like extension for integrated antenna. |
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KR200482343Y1 (ko) * | 2014-09-05 | 2017-01-13 | 주식회사 케이엠더블유 | 이동통신 시스템용 안테나 장치 |
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EP2901523B1 (en) | 2016-09-07 |
EP2901523A1 (en) | 2015-08-05 |
WO2014049088A1 (en) | 2014-04-03 |
US20150222012A1 (en) | 2015-08-06 |
US9614277B2 (en) | 2017-04-04 |
JP6058144B2 (ja) | 2017-01-11 |
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