JP2015222810A - 光センサおよびその製造方法 - Google Patents
光センサおよびその製造方法 Download PDFInfo
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- 230000003287 optical effect Effects 0.000 claims abstract description 76
- 239000012792 core layer Substances 0.000 claims abstract description 51
- 239000010410 layer Substances 0.000 claims description 182
- 238000001514 detection method Methods 0.000 claims description 77
- 238000005253 cladding Methods 0.000 claims description 31
- 229910052751 metal Inorganic materials 0.000 claims description 13
- 239000002184 metal Substances 0.000 claims description 13
- 239000011247 coating layer Substances 0.000 claims description 10
- 239000012491 analyte Substances 0.000 claims description 9
- 229910044991 metal oxide Inorganic materials 0.000 claims description 8
- 150000004706 metal oxides Chemical class 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
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- 238000003780 insertion Methods 0.000 abstract description 3
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 8
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 7
- 239000002800 charge carrier Substances 0.000 description 7
- 230000005284 excitation Effects 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 238000005137 deposition process Methods 0.000 description 6
- 239000003989 dielectric material Substances 0.000 description 6
- 229910004298 SiO 2 Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000008021 deposition Effects 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 230000035945 sensitivity Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- VXAUWWUXCIMFIM-UHFFFAOYSA-M aluminum;oxygen(2-);hydroxide Chemical compound [OH-].[O-2].[Al+3] VXAUWWUXCIMFIM-UHFFFAOYSA-M 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 238000002513 implantation Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 1
- 229910015900 BF3 Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 108091028043 Nucleic acid sequence Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910004200 TaSiN Inorganic materials 0.000 description 1
- 229910010038 TiAl Inorganic materials 0.000 description 1
- 229910010037 TiAlN Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- ILCYGSITMBHYNK-UHFFFAOYSA-N [Si]=O.[Hf] Chemical compound [Si]=O.[Hf] ILCYGSITMBHYNK-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- RUFLMLWJRZAWLJ-UHFFFAOYSA-N nickel silicide Chemical compound [Ni]=[Si]=[Ni] RUFLMLWJRZAWLJ-UHFFFAOYSA-N 0.000 description 1
- 229910021334 nickel silicide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
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Abstract
【解決手段】光センサ100は、導波路領域200と、光検出領域55とを含む。導波路領域200は、入射光8を導くように構成される。光8は、挿入部分20から伝わり、導波路部分27の中を伝わる。光8のエバネセント波が、コア層27の上の検体231と結合する。光8のエバネセント波に対応して、検体231は、光81、82、および83の異なった波長の蛍光光を放射する。光検出領域55は、多重接合フォトダイオード552、554、557を有する。光検出領域55は、光81、82、および83を検出する。
【選択図】図1
Description
Claims (21)
- 前側と裏側とを含む半導電性ブロックと、
半導電性ブロックの前記裏側の上にあり、コア層を含み、入射光を導くように構成された導波路領域と、
前記半導電性ブロックにあり、多重接合フォトダイオードを含み、放射光を検出するように構成された光検出領域と、を含む光センサ。 - 前記導波路領域は、上部クラッド層と下部クラッド層とを含み、前記下部クラッド層と前記上部クラッド層との膜厚の間の比は、約1から約2である請求項1に記載の光センサ。
- 前記多重接合フォトダイオードは、前記前側に最も近い第1の接合と、前記前側から最も遠い第2の接合とを含み、前記第1の接合から前記第2の接合までの距離は、約2マイクロメータから約3マイクロメータである請求項1に記載の光センサ。
- 前記多重接合フォトダイオードは、第2の水平接合より前記前側に近い第1の水平接合を含み、前記第1の水平接合は、前記第2の水平接合より小さい請求項1に記載の光センサ。
- 前記コア層は第1の屈折率を含み、クラッド層は第2の屈折率を含み、前記第2の屈折率は前記第1の屈折率より小さい請求項1に記載の光センサ。
- 前記導波路領域はフィルタ層を含み、前記フィルタ層は前記裏側と前記コア層との間に配置される請求項1に記載の光センサ。
- 前記多重接合フォトダイオードは、
前記前側に最も近い第1の接合と、
前記裏側に最も近い第2の接合と、
前記第1の接合と前記第2の接合との間の第3の接合と、を含み、
前記裏側から前記第1の接合、前記第2の接合、および前記第3の接合までのそれぞれの距離の比は、約4:1:2から約9:1:3の範囲である請求項1に記載の光センサ。 - 前記多重接合フォトダイオードは、第1の所定の距離で前記裏側から離れて配置される第2の接合を含み、前記第1の所定の距離は、約200nmから約500nmの範囲である請求項1に記載の光センサ。
- 前記多重接合フォトダイオードは、第2の所定の距離で前記裏側から離れて配置される第1の接合を含み、前記第2の所定の距離は、約2.5μmから約3μmの範囲である請求項8に記載の光センサ。
- 前記コア層の上にあるクラッド層を更に含み、前記クラッド層はナノウエルを含む請求項1に記載の光センサ。
- 前記コア層の上にある被覆層を更に含み、前記被覆層は金属または金属酸化物を含む請求項1に記載の光センサ。
- 前記コア層の上にある被覆層を更に含み、前記被覆層はアルミニウムまたは酸化アルミニウムを含む請求項1に記載の光センサ。
- 前側を含む半導電性ブロックと、
コア層を含み、入射光を導くように構成された導波路領域と、
放射光を検出するように構成された光検出領域と、
前記前側の上にあり、前記光検出領域と結合するように構成された相互接続領域と、を含み、
前記相互接続領域は、前記光検出領域と前記導波路領域との間にある光センサ。 - 前記導波路領域は、クラッド層を含む請求項13に記載の光センサ。
- 前記クラッド層は、ナノウエルを含む請求項14に記載の光センサ。
- 前記クラッド層は、単分子を含む検体を受けるように構成されたサンプル保持部分を含む請求項13に記載の光センサ。
- 前記コア層は、格子構造を含む請求項13に記載の光センサ。
- 前記コア層は、約150ナノメータに約5〜10%を加える所定の厚さを含む請求項13に記載の光センサ。
- 前記光検出領域は、多重接合フォトダイオードを含み、前記多重接合フォトダイオードは前記前側と接触する接合を含む請求項13に記載の光センサ。
- 前記導波路領域の上部にある被覆層を更に含み、前記被覆層は前記導波路領域を露出させる開口を含み、前記被覆層は金属または金属酸化物を含む請求項13に記載の光センサ。
- 前記開口は前記入射光の波長より小さい幅を含む請求項20に記載の光センサ。
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