JP2015207786A - load port - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a load port capable of performing purge processing that achieves a high reaching concentration of a predetermined gas atmosphere in a short time, and of improving the work efficiency.SOLUTION: Provided is a load port 1 that is provided adjacently to a semiconductor manufacturing device in a clean room, and that receives a transported FOUP 9 and ejects and inserts a wafer stored in the FOUP 9 between the inside of the semiconductor manufacturing device and the inside of the FOUP 9 via a carrying in/out port 91 formed on a front surface of the FOUP 9. The load port 1 comprises: a frame 2 with an opening 21 communicated with the carrying in/out port 91 of the FOUP 9; a door part 3 that can open and close the opening 21; and a chamber 7 that can shield the opening 21 opened by the door part 3 and communicated with the carrying in/out port 91, from a front surface of the FOUP 9. A gas can be injected into the FOUP 9.

Description

  The present invention relates to a load port provided adjacent to a semiconductor manufacturing apparatus in a clean room.

  In the semiconductor manufacturing process, wafers are processed in a clean room in order to improve yield and quality. However, with high integration of elements, miniaturization of circuits, and increase in wafer size, it is difficult to manage small dust in the clean room as a whole in terms of cost and technology. Yes. For this reason, in recent years, as an alternative to improving the cleanliness of the entire clean room, the “mini-environment method”, which improves the cleanliness of only the local space around the wafer, has been introduced to carry wafers and other processes. Means to do is adopted. In the mini-environment method, a storage container called FOUP (Front-Opening Unified Pod) for transporting and storing wafers in a highly clean environment and a wafer in the FOUP are taken in and out of the semiconductor manufacturing equipment. A load port (Load Port), which is a device of an interface unit that exchanges FOUP with a device, is used as an important device. That is, in the clean room, in particular, by maintaining the cleanliness in the FOUP and the semiconductor manufacturing apparatus, the space where the load port is arranged, in other words, the cleanliness of the outside of the FOUP and the semiconductor manufacturing apparatus is made low. It is designed to reduce construction and operation costs. Here, the FOUP is provided with a wafer entrance / exit on the front surface (front) and a door capable of closing the entrance / exit.

  The door and door are opened simultaneously with the door provided on the load port in close contact with the door provided on the front of the FOUP, and the wafer in the FOUP passes through the carry-in / out entrance and is supplied into the semiconductor manufacturing apparatus. Is done. Thereafter, the wafers that have been subjected to various processing or processing are accommodated again in the FOUP from within the semiconductor manufacturing apparatus.

  By the way, the inside of the semiconductor manufacturing apparatus is maintained in a predetermined gas atmosphere suitable for wafer processing or processing. However, when the wafer is sent from the FOUP into the semiconductor manufacturing apparatus, the internal space of the FOUP and the inside of the semiconductor manufacturing apparatus. The space communicates with each other. Therefore, if the environment in the FOUP is less clean than in the semiconductor manufacturing apparatus, the gas in the FOUP may enter the semiconductor manufacturing apparatus and adversely affect the gas atmosphere in the semiconductor manufacturing apparatus. In addition, when the wafer is accommodated in the FOUP from the semiconductor manufacturing apparatus, there is a problem that an oxide film can be formed on the surface of the wafer by moisture, oxygen, or other gas in the gas atmosphere in the FOUP.

  Therefore, in Patent Document 1, before making the internal space of the FOUP and the internal space of the semiconductor manufacturing apparatus communicate with each other, the FOUP in which the wafer is accommodated is arranged so that the inside of the FOUP has the same gas atmosphere as that in the semiconductor manufacturing apparatus. When it is detected that it is placed on the loading port mounting table, a predetermined gas (for example, nitrogen or an inert gas) is injected into the FOUP to fill it, and the inside of the FOUP is replaced with a predetermined gas atmosphere. A load port is disclosed. Thus, the so-called bottom purge method in which a gas such as nitrogen or dry air is injected into the FOUP from the bottom side of the FOUP and the inside of the FOUP is replaced with a predetermined gas atmosphere has the advantage that the concentration reached in the predetermined gas atmosphere is high. is there.

  In Patent Document 2, the door of the FOUP is opened at the door portion of the load port, and the internal space of the FOUP and the internal space of the semiconductor manufacturing apparatus are in communication with each other, provided closer to the semiconductor manufacturing apparatus than the opening. A load port is disclosed in which a predetermined gas (for example, nitrogen or inert gas) is blown into the FOUP by a purge unit (purge nozzle). In this way, a predetermined gas is injected into the FOUP from the front side (semiconductor manufacturing apparatus side) into the FOUP opened to the internal space of the semiconductor manufacturing apparatus via the carry-in / out port, and the FOUP is made into a predetermined gas atmosphere. The so-called front purge method for replacement has an advantage that the purge process can be performed in a shorter time than the bottom purge method.

JP 2006-351619 A JP 2009-038074 A

  However, since the above-described bottom purge method performs the purge process through a small-diameter port provided on the bottom surface of the FOUP, the purge process requires a longer time than the front purge method, and the work efficiency is reduced. there were. In addition, the front purge method performs a purge process in a state where the opening of the FOUP is opened and the internal space of the FOUP is in direct communication with the entire internal space of the semiconductor manufacturing apparatus. There is a demerit that it is difficult to maintain a predetermined gas atmosphere concentration and the concentration reached in the predetermined gas atmosphere is low.

  As described above, each of the conventionally known bottom purge and front purge methods has advantages and disadvantages, and it is difficult to perform a purge process with a high concentration in a predetermined gas atmosphere in a short time.

  The present invention has been made paying attention to such a problem, and a main object of the present invention is to provide a space in which the internal space of the FOUP communicates through the opening (external) is narrower than the entire internal space of the semiconductor manufacturing apparatus. It is intended to provide a load port that can perform a purging process with a high concentration in a predetermined gas atmosphere in a short time, and can improve working efficiency, limited to (internal space of the chamber).

  That is, according to the present invention, a wafer which is provided adjacent to a semiconductor manufacturing apparatus in a clean room, receives a FOUP conveyed and is stored in the FOUP, is formed on the front surface of the FOUP between the semiconductor manufacturing apparatus and the FOUP. The present invention relates to a load port that is taken in and out through the carry-in / out port.

  Here, the “semiconductor manufacturing apparatus” in the present invention includes both those having a transfer chamber disposed at a position directly adjacent to the load port and those having no transfer chamber. In addition, in the transfer chamber, the transfer of transferring the wafers in the FOUP one by one or between the FOUP and the semiconductor manufacturing apparatus main body in a multi-stage cassette that is detachably set in the FOUP and stores a plurality of wafers. There is a machine.

  The load port according to the present invention includes a frame having an opening that can communicate with the carry-in / out port of the FOUP, a door portion that can open and close the opening, and an open portion that communicates with the carry-in / out port opened by the door portion. A chamber that can be shielded from the side, and is configured to be able to inject a predetermined gas into the FOUP. The chamber is configured to shield the FOUP loading / unloading port from the front side of the FOUP, and the FOUP inside the semiconductor manufacturing apparatus side. In the thickness direction of the door portion which is set so as to be movable between the chamber retracted position which can be directly opened and is in the same direction as the front-rear direction of the FOUP in any of the shield position and the chamber retracted position. It is characterized in that the single structure is maintained.

  As described above, the load port according to the present invention is configured to be able to inject a predetermined gas into the FOUP, and may include, for example, both a bottom purge unit and a front purge unit, and shortens a high concentration purge process. Can be done in time.

  Here, if the door is in a closed state that closes the opening of the frame, the FOUP carry-in / out port is also closed, whereas if the door is in an open state that opens the opening of the frame, the FOUP carry-in / out port is also opened. The opening and the carry-in / out port communicate with each other. Since the load port of the present invention includes a chamber that can shield the opening from the front side of the FOUP (in other words, the semiconductor manufacturing apparatus side), the internal space of the FOUP when the door is open. Can be limited to a space (an internal space of the chamber) narrower than the entire internal space of the semiconductor manufacturing apparatus. Therefore, as compared with an embodiment in which purge processing is performed in a state where the internal space of the FOUP is directly opened to the entire internal space of the semiconductor manufacturing apparatus without providing a chamber, the internal space of the FOUP and the internal space of the FOUP are directly communicated with each other. The internal space of the chamber can be maintained at a high nitrogen concentration or a high dry air concentration, and a purge process with a high concentration reached in a predetermined gas atmosphere can be performed efficiently and accurately.

  As described above, in the present invention, since the predetermined gas can be injected into the FOUP, it is possible to realize a high concentration and a short time for the purge process. Moreover, in the load port of the present invention, the internal space of the FOUP whose opening is opened by the door portion is not directly communicated with the internal space of the semiconductor manufacturing apparatus, but the internal space of the FOUP is formed by a chamber provided at a position facing the opening. The space for direct communication can be reduced.

Further, when the wafer in the FOUP is taken into and out of the semiconductor manufacturing apparatus side, the chamber may interfere with the wafer loading / unloading process. However, in the present invention, the FOUP loading / unloading port is at least the front side of the FOUP (semiconductor manufacturing apparatus). The FOUP can be moved between a shielding position that can be shielded from the side) and a chamber opening position that can be opened directly to the semiconductor manufacturing apparatus side in the FOUP. During the wafer loading / unloading process, the chamber is moved from the shielding position to the chamber opening position. By being configured to move, it is possible to prevent troubles in the wafer loading / unloading process. In the present invention, the chamber is set so as to be movable between a shielding position where the carry-in / out entrance of the FOUP can be shielded from the front side of the FOUP and a chamber retracting position where the inside of the FOUP can be directly opened to the semiconductor manufacturing apparatus side, In addition to the single position in the thickness direction of the door, the single structure in the thickness direction of the door portion that is the same as the front-rear direction of the FOUP is maintained in the state of being positioned at either the shielding position or the chamber retracted position. Thus, a structure in which the single structure in the width direction of the door portion is maintained can be applied.
Further, in the load port according to the present invention, as the chamber, a chamber provided with a chamber main body movable between the shielding position and the chamber retracting position is applied, and at least a pair of side walls that partition at least the internal space of the chamber from the external space It is also possible to configure the chamber body using
Furthermore, in the load port according to the present invention, a chamber provided with an exhaust part that discharges at least the atmosphere of the internal space of the chamber to the outside of the chamber can be applied.
In addition, the load port according to the present invention is provided adjacent to the semiconductor manufacturing apparatus in the clean room, receives the FOUP that has been transferred, and stores the wafers stored in the FOUP in the semiconductor manufacturing apparatus and the FOUP. The frame has an opening that can communicate with the loading / unloading port, and is provided on the side of the semiconductor manufacturing apparatus with respect to the opening of the frame. A chamber capable of shielding the opening communicating with the carry-in / out opening from the front side of the FOUP, configured to allow a predetermined gas to be injected into the FOUP, and a ceiling wall and a pair of chambers that partition the internal space of the chamber from the external space The side wall is fixed to the frame, and the chamber has a shielding position capable of shielding the carry-in / out entrance of the FOUP from the front side of the FOUP, The OUP is set so as to be movable between a chamber retracted position that can be directly opened to the semiconductor manufacturing apparatus side, and in a state where it is positioned at either the shielding position or the chamber retracted position, a single layer in the same direction as the front-rear direction of the FOUP is used. It is characterized in that the structure is maintained.
In such a load port, it is possible to adopt a configuration in which a chamber having a bottom wall is applied as the chamber, and an exhaust portion for discharging the atmosphere of the internal space of the chamber to the outside of the chamber is formed on the bottom wall. .

  When the chamber is moved from the shielding position to the chamber opening position, when the FOUP loading / unloading port is opened, the gas atmosphere in the FOUP is less clean than immediately after the purge operation, and the gas atmosphere in the FOUP An oxide film can be formed on the surface of the wafer by water, oxygen, or other gas. In order to solve such a problem, in the load port of the present invention, the chamber is provided with a chamber main body portion that is movable between the shielding position and the chamber opening position, and a non-movable front purge portion. The front purge process (at least the process of blowing nitrogen or dry air into the FOUP) is continuously performed before and after moving the chamber body from the shielding position to the chamber opening position. Can be set as follows.

  Also, in the present invention, if a mapping device that maps the number and position of wafers stored in the FOUP is provided in the chamber, the FOUP loading / unloading port is shielded from the front side of the FOUP by the chamber. Even in the state, the mapping process of the wafer stored in the FOUP can be appropriately performed.

  Furthermore, in the present invention, the load port can be provided with a guide portion that guides nitrogen or dry air supplied from the front purge portion into the FOUP so that the front purge processing by the front purge portion can be suitably performed.

  According to the present invention, a relatively narrow space partitioned by the chamber is formed so that the predetermined gas can be injected into the FOUP. Therefore, the purge process in which the predetermined concentration of the predetermined gas atmosphere is high is performed in a short time. A load port capable of being provided can be provided.

BRIEF DESCRIPTION OF THE DRAWINGS The whole block diagram which abbreviate | omits and shows the load port which concerns on one Embodiment of this invention. The side surface schematic diagram of the load port in the state shown in FIG. FIG. 3 is a view corresponding to FIG. 2 of the load port in a state where the chamber is in the chamber retracted position. FIG. 2 is a view corresponding to FIG. 2 of the load port in a state where the door portion is in a closed position. FIG. 2 is a view corresponding to FIG. 2 showing a modification of the load port according to the embodiment.

  Hereinafter, an embodiment of the present invention will be described with reference to the drawings.

  As shown in FIG. 1, the load port 1 according to the present embodiment is used in a semiconductor manufacturing process and is disposed adjacent to a semiconductor manufacturing apparatus (not shown) in a clean room. The door 3 is brought into close contact and opened and closed, and a wafer (not shown) accommodated in the FOUP 9 is taken in and out of the semiconductor manufacturing apparatus.

  The FOUP 9 applied in the present embodiment is configured to accommodate a plurality of wafers therein and to be able to load and unload these wafers via a loading / unloading port 91 formed on the front surface. The FOUP 9 includes a door that can open and close the loading / unloading port 91. Therefore, detailed description is omitted. In the present invention and this embodiment, the front surface of the FOUP 9 means the surface of the load port 1 that faces the door portion 3 when placed on the load port 1.

  The semiconductor manufacturing apparatus includes, for example, a semiconductor manufacturing apparatus main body that is disposed relatively far from the load port 1 and a transfer chamber that is disposed between the semiconductor manufacturing apparatus main body and the load port 1. In the transfer chamber, for example, a transfer machine is provided for transferring wafers in the FOUP 9 one by one between the FOUP 9 and the transfer chamber, and between the transfer chamber and the semiconductor manufacturing apparatus main body. In addition, it is also possible to transfer the cassette in which a plurality of wafers are stored between the FOUP 9 and the semiconductor manufacturing apparatus (semiconductor manufacturing apparatus main body and transfer chamber). With such a configuration, in the clean room, the inside of the semiconductor manufacturing apparatus main body, the transfer chamber, and the inside of the FOUP 9 are maintained with high cleanliness, while the space in which the load port 1 is arranged, in other words, outside the semiconductor manufacturing apparatus main body and the transfer chamber. , And outside the FOUP 9 are relatively low cleanliness.

  Hereinafter, the configuration of the load port 1 according to the present embodiment will be mainly described.

  As shown in FIGS. 1 and 2 (FIG. 2 is a schematic side view of the load port 1 seen from the direction of arrow A in FIG. 1), the load port 1 has an opening 21 that can communicate with the carry-in / out port 91 of the FOUP 9. Frame 2 arranged in an upright position, door 3 that can open and close opening 21, mounting table 4 that extends in a substantially horizontal position in a direction away from the semiconductor manufacturing apparatus in frame 2, and mounting table 4, a gas such as nitrogen, inert gas, or dry air (in this embodiment, nitrogen gas is used) can be injected into the FOUP 9 from the bottom side of the FOUP 9, and the gas atmosphere in the FOUP 9 can be replaced with nitrogen gas. A gas such as nitrogen, inert gas, or dry air from the front side of the FOUP 9 in a state in which the carry-in / out port 91 is opened by the bottom purge unit 5 and the door unit 3 (in this embodiment, nitrogen gas is used) ) And the gas atmosphere in the FOUP 9 can be replaced by nitrogen gas, and the semiconductor manufacturing apparatus side with respect to the door 3 and provided at a position facing the carry-in / out port 91 and the opening 21. The FOUP 9 in a state where the carry-in / out port 91 is opened by the door portion 3 is mainly provided with a chamber 7 that can shield the FOUP 9 from the front side of the FOUP 9.

  The frame 2 has a substantially rectangular plate shape and has an opening 21 having a size capable of communicating with the carry-in / out port 91 of the FOUP 9 mounted on the mounting table 4. The load port 1 of the present embodiment can be used with the frame 2 in close contact with a semiconductor manufacturing apparatus (specifically, a transfer chamber) (see FIG. 1).

  The door portion 3 is in an open position 3 (X) where the door is opened and the carry-in / out port 91 is opened in close contact with a door (not shown) provided on the front surface of the FOUP 9 in a state where the FOUP 9 is mounted on the mounting table 4. It is operable between the closing position 3 (Y) for closing the carry-in / out entrance 91 (see FIGS. 2 and 3). As the door elevating mechanism 3K that moves the door 3 up and down at least between the open position 3 (X) and the closed position 3 (Y), a known one can be applied.

  The mounting table 4 is arranged in a substantially horizontal posture at a position slightly upward from the center in the height direction of the frame 2 and has a plurality of protrusions 41 protruding upward. Then, these protrusions 41 are engaged with holes (not shown) formed on the bottom surface of the FOUP 9 to position the FOUP 9 on the mounting table 4. In addition, as the mounting table 4, the FOUP 9 in the mounting state is a predetermined distance from the opening 21 (door 3) and the position where the carry-in / out entrance 91 (door) is closest to the opening 21 (door 3) of the frame 2. A device provided with a moving mechanism for moving between the separated positions can also be applied.

  The bottom purge unit 5 mainly includes a plurality of ports 51 provided at predetermined positions on the mounting table 4. The plurality of ports 51 are bottom purge injection ports for injecting nitrogen gas and bottom purge discharges for discharging the gas atmosphere in the FOUP 9. It is functioning as a port. The plurality of ports 51 can be provided, for example, in pairs at positions separated along the width direction of the mounting table 4. Each port 51 (bottom purge injection port, bottom purge discharge port) has a valve function for regulating the backflow of gas, and is fitted to an inlet and an outlet (both not shown) provided at the bottom of the FOUP 9. It can be connected in a state. A fitting portion between each port 51 (bottom purge injection port, bottom purge discharge port) and the inlet and outlet of the FOUP 9 is hermetically sealed by packing or the like provided at the tip of the port 51.

  Further, the load port 1 of the present embodiment is provided with a pressure sensor on the mounting table 4, and when detecting that the bottom surface portion of the FOUP 9 has pressed the pressed portion of the pressure sensor, a load from the control unit (not shown). In response to the signal, nitrogen gas is ejected from the bottom purge injection port, and nitrogen gas is injected into the FOUP 9 through the injection port. At this time, a gas such as air filled in the FOUP 9 is discharged from the FOUP 9 through the bottom purge discharge port to the outside of the FOUP 9.

  The chamber 7 is provided on the semiconductor manufacturing apparatus side of the frame 2 with respect to the opening 21, and at least a front-rear direction (of the FOUP 9) between the internal space of the adjacent semiconductor manufacturing apparatus (specifically, the transfer chamber) and the internal space of the FOUP 9. It is the same direction as the depth direction and can be blocked in the direction of arrow D shown in FIG. The chamber 7 is configured by a chamber main body 71 that can be moved up and down and a fixed portion 72 that cannot be moved up and down. In the present embodiment, the standing wall 7a that is slightly larger than the opening shape of the opening 21, a pair of left and right side walls 7b extending from both side edges of the standing wall 7a to the frame 2 side, and a lower edge of the standing wall 7a. A bottom wall 7c extending to the frame 2 side is integrally or integrally provided, and the standing wall 7a, the side wall 7b, and the bottom wall 7c constitute a chamber body 71. In the load port 1 of the present embodiment, the chamber main body 71 is covered with the chamber lifting / lowering mechanism 7K by covering the opening 21 of the frame 2 from the semiconductor braking device side and connecting the internal space of the FOUP 9 leading to the opening 21 with the chamber 7. It is possible to move between the shielding position 7 (X) that can be directly opened only to the internal space 7S and the chamber retreat position 7 (Y) that can open the internal space of the FOUP 9 leading to the opening 21 to the internal space of the semiconductor manufacturing apparatus. (See FIGS. 2 and 4). In the present embodiment, the chamber elevating mechanism 7K uses an air cylinder 7Ka for driving the chamber main body 71 up and down and a guide rail portion 7Kb for guiding the elevating operation of the chamber main body 71. .

  The fixing part 72 forms a minute space 7S in which the internal space of the FOUP 9 communicates with the chamber main body 71 at the shielding position 7 (X) through the opening 21. In this embodiment, the fixing part 72 Is formed by a ceiling wall 7d provided at a position facing the bottom wall 7c.

  The front purge unit 6 is disposed in the vicinity of the opening 21, and when the door 3 is opened, that is, when the door 3 is in the open position 3 (X), the FOUP 9 passes through the opening 21 and the carry-in / out port 91 of the FOUP 9. A gas such as nitrogen, an inert gas, or dry air (nitrogen gas is used in this embodiment) is blown into the inside. In the load port 1 of the present embodiment, the front purge section 6 is provided on the ceiling wall 7 d (fixed section 72) of the chamber 7. The front purge unit 6 includes, for example, a plurality of front purge nozzles 62 branched from the gas pipe 61, and the opening 21 in a posture in which the front purge nozzles 62 are directed downward and forward (FOUP 9 side). It is arranged at an equal pitch along the top side.

  Further, the load port 1 according to the present embodiment includes a mapping device 8 that maps the number and position of wafers stored in the FOUP 9. The mapping device 8 is housed in the internal space 7S of the chamber 7, and a mapping position 8 (X) facing the opening 21 and a mapping retracting position 8 (Y) not facing the opening 21 by the mapping device lifting mechanism 8K. (See FIGS. 2 and 4).

  In the load port 1 of the present embodiment, the door portion 3, the chamber main body portion 71, and the mapping device 8 are set so that they can be moved up and down independently of each other. Further, when the door unit 3 and the mapping device 8 are moved up and down in the state where the chamber main body 71 is set at the shielding position 7 (X), the door unit 3, the door lifting mechanism 3K, the mapping device 8 or the mapping device is moved up and down. In order to prevent the mechanism 8K from interfering with the chamber 7, the bottom wall 7c of the chamber 7 is formed with an opening and a slit through which these members and mechanisms can pass (not shown). In the front purge process, the gas atmosphere in the FOUP 9 is discharged from such openings and slits. That is, in the load port 1 of the present embodiment, these openings and slits formed in the bottom wall 7c of the chamber 7 function as front purge discharge ports, and the air filled in the FOUP 9 and the internal space 7S of the chamber 7 or the like The gas is discharged to the outside of the FOUP 9 and the chamber 7 through the discharge port so that nitrogen gas can be filled at a high concentration. In addition, the roller part which can be locked in a lower end part is provided, and it can also be set as the load port 1 which can move to an appropriate place, rolling a roller part in the state which cancelled | released the locked state.

  Next, the usage method and operation of the load port 1 having such a configuration will be described.

  First, the FOUP 9 is transported to the load port 1 by a transport device (not shown). The transported FOUP 9 is mounted on the load port 1 in the state shown in FIG. 1, that is, on the mounting table 4 of the load port 1 in which the door portion 3 and the chamber 7 are in the closed position 3 (Y) and the shield position 7 (X), respectively. Placed. At this time, the protrusion 41 provided on the mounting table 4 engages with a hole formed in the bottom surface portion of the FOUP 9. At the same time or substantially at the same time when the FOUP 9 is mounted on the mounting table 4, each port 51 (bottom purge injection port and bottom purge discharge port) of the bottom purge unit 5 provided on the mounting table 4 is formed on the bottom surface of the FOUP 9. Connected to the inlet and the discharge port, nitrogen gas is injected into the FOUP 9 from the bottom purge injection port 51, and the gas filled in the FOUP 9 is discharged out of the FOUP 9 from the bottom purge discharge port 51.

  The load port 1 of the present embodiment is in a state in which the opening 21 is communicated with the carry-in / out port 91 of the FOUP 9 by the door portion 3 immediately after the FOUP 9 is placed on the placing table 4 (see FIG. 2). Thus, the mapping process is performed on the wafers in the FOUP 9 by the mapping apparatus 8 set at the mappable position 8 (X), and the wafers in the FOUP 9 are sequentially dispensed into the semiconductor manufacturing apparatus. Specifically, when the door portion 3 of the load port 1 is in close contact with the door of the FOUP 9, the closed position 3 (Y) is changed to the open position 3 (X), and the opening 21 is communicated with the carry-in / out entrance 91 of the FOUP 9. After the mapping process is performed and the chamber 7 is moved from the shielding position 7 (X) to the chamber opening position 7 (Y), the wafer in the FOUP 9 is moved into the semiconductor manufacturing apparatus by a transfer machine provided in the transfer chamber of the semiconductor manufacturing apparatus. Sequentially. The wafer transferred into the transfer chamber is subsequently transferred into the semiconductor manufacturing apparatus main body and used for a semiconductor manufacturing processing step by the semiconductor manufacturing apparatus main body. Wafers that have completed the semiconductor manufacturing process by the semiconductor manufacturing apparatus main body are sequentially stored in the FOUP 9 by the transfer device via the transfer chamber.

  The load port 1 according to the present embodiment has a front purge when the carry-in / out port 91 of the FOUP 9 is opened, in other words, when the door 3 is moved from the closed position 3 (Y) to the open position 3 (X). Nitrogen gas is blown from the part 6 into the FOUP 9. In the load port 1 of the present embodiment, the chamber body 71 is set to the shielding position 7 (X) (a position where the internal space 9S of the FOUP 9 can be directly opened only to the internal space 7S of the chamber 7) during the mapping process. As a result, compared to the case where the internal space 9S of the FOUP 9 communicates directly with the entire internal space of the semiconductor manufacturing apparatus, the space directly communicating with the internal space 9S of the FOUP 9 can be limited to a narrow closed space, which is high. The nitrogen gas concentration can be maintained (see FIG. 2). By performing such a front purge process together with the bottom purge process, the purge process can be performed in a short time while keeping the nitrogen gas concentration in the FOUP 9 high, and is opened outside the FOUP 9 through the carry-in / out port 91 and the opening 21. When mapping the processed wafer, it is possible to replace the gas atmosphere in the FOUP 9 with nitrogen gas or to remove excess moisture.

  In addition, the load port 1 of the present embodiment allows the chamber main body 71 to be moved from the shielding position 7 (X) to the chamber retracting position 7 (Y) (when the wafer is taken in and out between the FOUP 9 and the semiconductor manufacturing apparatus. The internal space 9S of the FOUP 9 communicating with the opening 21 is moved to a position that directly opens to the internal space of the semiconductor manufacturing apparatus), and the mapping device 8 is moved from the mapping possible position 8 (X) to the mapping retracted position 8 (Y). However, the bottom purge process and the front purge process are continuously performed even when such a wafer is taken in and out. Therefore, the gas atmosphere in the FOUP 9 can be continuously replaced with nitrogen gas while the wafer is taken in and out, so that the high concentration can be maintained.

  When all the wafers have been processed in the semiconductor manufacturing process and stored in the FOUP 9, the chamber body 71 is moved from the chamber retracted position 7 (Y) to the shielded position 7 (X), and the door 3 is moved to the door of the FOUP 9. In a state of being in close contact with each other, it is moved from the open position 3 (X) to the closed position 3 (Y). As a result, the opening 21 of the load port 1 and the carry-in / out port 91 of the FOUP 9 are closed. Subsequently, the FOUP 9 placed on the placing table 4 is carried out to the next process by a transport mechanism (not shown). If necessary, the bottom purge process may be performed again on the FOUP 9 containing the wafer that has undergone the semiconductor manufacturing process. In this way, the purge process can be started immediately on the FOUP 9 containing the wafer that has completed the semiconductor manufacturing process, and oxidation of the processed wafer can be prevented.

  As described in detail above, the load port 1 according to the present embodiment is configured to be able to inject a predetermined gas into the FOUP 9, and performs the bottom purge process by the bottom purge unit 5 and the front purge process by the front purge unit 6 together. Therefore, a high concentration purge process can be performed in the FOUP 9 in a short time. In addition, the chamber main body 71 at the shielding position 7 (X) realizes a narrow space in which the interior of the FOUP 9 communicates directly through the opening 21, so that the front purge process and the bottom purge are performed while maintaining a high nitrogen gas concentration. Processing can be performed efficiently and accurately. In particular, when the wafer is taken in and out of the FOUP 9 and the semiconductor manufacturing apparatus, nitrogen gas is blown from the bottom purge unit 5 and the front purge unit 6 toward the FOUP 9 to thereby change the gas atmosphere in the FOUP 9 to nitrogen. It is possible to replace with gas or to remove excess moisture, so that the wafer can be prevented from being oxidized and adverse effects due to moisture can be avoided.

  In addition, among the plurality of wafers accommodated in the common FOUP 9, the wafers that are first accommodated in the FOUP 9 after finishing the semiconductor fabrication process are finally accommodated in the FOUP 9. Normally, exposure to a gas atmosphere in which the filling degree (substitution degree) of nitrogen gas decreases with the passage of the wafer loading / unloading operation time in the FOUP 9 may slightly affect the front purge unit 6 and By blowing nitrogen gas from the bottom purge unit 5 toward the FOUP 9, it is possible to effectively suppress a decrease in the nitrogen gas filling degree (substitution degree) in the FOUP 9, and the wafer is stored in the FOUP 9 in a good state. Can be kept. Of course, when the wafer is taken in and out between the FOUP 9 and the semiconductor manufacturing apparatus, the chamber body 71 is moved from the shielding position 7 (X) to the chamber retracted position 7 (Y), so that the wafer is taken in and out. A situation in which the wafer interferes with a part of the chamber 7 can be prevented, and the original function of the FOUP 9 can be exhibited, that is, the wafer is taken in and out between the FOUP 9 and the semiconductor manufacturing apparatus.

  Further, since the load port 1 according to the present embodiment includes the front purge unit 6 on the ceiling wall 7d that functions as the immovable fixed unit 72 in the chamber 7, a dedicated member for providing the front purge unit 6 is provided. It is possible to reduce the number of parts and reduce the cost.

  In addition, this invention is not limited to embodiment mentioned above. For example, as illustrated in FIG. 5, the load port 1 may include a guide portion G that guides nitrogen gas blown from the front purge portion 6 to the internal space 9 </ b> S of the FOUP 9. As a suitable guide part G, the guide plate G1 arrange | positioned with the attitude | position which inclined the surface facing the blower outlet (equivalent to the nozzle mentioned above) of the front purge part 6 to the FOUP9 side by the predetermined angle can be mentioned. In FIG. 5, for convenience of explanation, a pattern is attached to the guide portion G. With such a load port 1, the nitrogen gas blown out from the front purge unit 6 can be efficiently guided to the internal space 9S of the FOUP 9 by the guide unit G1, and the front purge process can be performed accurately.

  Further, the number and arrangement positions of the bottom purge unit and the front purge unit may be changed as appropriate. Furthermore, what was comprised using members other than a port and a nozzle, respectively as a bottom purge part and a front purge part is also applicable. The shape of the outlet of each purge unit (corresponding to the port and nozzle in the above-described embodiment) may be changed as appropriate.

  In the above-described embodiment, only the ceiling wall of the chamber is allowed to function as a fixed portion that cannot be moved up and down, and the front purge portion is provided on the ceiling wall, but in addition to the ceiling wall of the chamber, or Alternatively, the side wall may function as a fixed part, and a front purge part may be provided on the side wall.

  Further, when the chamber moves in the width direction of the frame 2, it is between a shield position where the carry-in / out entrance of the FOUP 9 can be shielded from the front side of the FOUP and a chamber open position where the inside of the FOUP can be opened directly to the semiconductor manufacturing apparatus side. It can also be configured to be switched at.

  Furthermore, as each lifting mechanism (moving mechanism) of the chamber, the door unit, and the mapping device, a mechanism configured using a hydraulic or gas pressure cylinder can be applied.

  Furthermore, the transfer machine provided in the transfer chamber in the above-described embodiment transfers a multi-stage cassette that is detachably set in the FOUP and stores a plurality of wafers between the FOUP and the semiconductor manufacturing apparatus main body. It may be. Further, the load port may be provided adjacent to a semiconductor manufacturing apparatus that does not have a transfer chamber.

  Further, the mounting table may have a function of changing (moving) the direction of the FOUP mounted in an arbitrary direction from the transport device to the correct direction.

  In addition, the specific configuration of each part is not limited to the above embodiment, and various modifications can be made without departing from the spirit of the present invention.

DESCRIPTION OF SYMBOLS 1 ... Load port 2 ... Frame 21 ... Opening part 3 ... Door part 5 ... Bottom purge part 6 ... Front purge part 7 ... Chamber 71 ... Chamber main-body part 72 ... Fixed part 7 (X) ... Shielding position 7 (Y) ... Chamber retraction Position 8 ... Mapping device 9 ... FOUP
91 ... Carry-in / out entrance G ... Guide section

Claims (6)

Unloading provided in the clean room adjacent to the semiconductor manufacturing apparatus and receiving the transported FOUP and forming a wafer stored in the FOUP on the front surface of the FOUP between the semiconductor manufacturing apparatus and the FOUP It is a load port that goes in and out through the entrance,
A frame having an opening capable of communicating with the carry-in / out port;
A door that can open and close the opening;
A chamber that is provided closer to the semiconductor manufacturing apparatus than the opening of the frame, and that can shield the opening communicating with the loading / unloading port opened by the door from the front side of the FOUP;
A predetermined gas can be injected into the FOUP.
The chamber is set to be movable between a shielding position where the carry-in / out opening of the FOUP can be shielded from the front side of the FOUP and a chamber retracting position where the inside of the FOUP can be directly opened to the semiconductor manufacturing apparatus side. In addition, a single structure in the thickness direction of the door portion, which is the same direction as the front-rear direction of the FOUP, is maintained in any of the shielding position and the chamber retracted position. Load port. 2. The load port according to claim 1, wherein the chamber has a single structure in the width direction of the door portion, regardless of whether the chamber is positioned at the shielding position or the chamber retracted position. The chamber is provided with a chamber body movable between the shield position and the chamber retracted position;
3. The load port according to claim 1, wherein the chamber main body is configured using at least a pair of side walls partitioning the internal space of the chamber from the external space. The load port according to any one of claims 1 to 3, wherein the chamber includes an exhaust unit that discharges at least the atmosphere of the internal space of the chamber to the outside of the chamber. Unloading provided in the clean room adjacent to the semiconductor manufacturing apparatus and receiving the transported FOUP and forming a wafer stored in the FOUP on the front surface of the FOUP between the semiconductor manufacturing apparatus and the FOUP It is a load port that goes in and out through the entrance,
A frame having an opening capable of communicating with the carry-in / out port;
A chamber that is provided closer to the semiconductor manufacturing apparatus than the opening of the frame, and that can shield the opening communicating with the opened loading / unloading port from the front side of the FOUP;
A predetermined gas can be injected into the FOUP.
Fixing a ceiling wall and a pair of side walls that partition the internal space of the chamber from the external space to the frame;
The chamber is set to be movable between a shielding position where the carry-in / out opening of the FOUP can be shielded from the front side of the FOUP and a chamber retracting position where the inside of the FOUP can be directly opened to the semiconductor manufacturing apparatus side. The load port is characterized in that a single structure in the front-rear direction of the FOUP is maintained in any of the shield position and the chamber retracted position. The load port according to claim 5, wherein the chamber has a bottom wall, and an exhaust portion for discharging the atmosphere of the internal space of the chamber to the outside of the chamber is formed on the bottom wall.

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