JP2015198032A - Method for manufacturing organic electroluminescent device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method for manufacturing an organic electroluminescent device capable of preventing market circulation of defectives.SOLUTION: The present invention relates to a method for manufacturing an organic electroluminescent device comprising: a first step of forming an organic electroluminescent element on a substrate; a second step of forming a sealing layer on the organic electroluminescent element after the first step; a third step of exposing the organic electroluminescent element to a high temperature and high humidity environment after the second step; a fourth step of checking the organic electroluminescent element; and a fifth step of bonding sealing substrates after the fourth step.

Description

  The present invention relates to a method for manufacturing an organic electroluminescence device.

  As a method for manufacturing an organic electroluminescence device, it is known to perform a defect inspection after bonding a sealing substrate (see, for example, Patent Document 1). In this case, degas such as a sealing layer may remain in the space where the sealing substrate is bonded.

  Further, as described in Patent Document 2 below, as a method for manufacturing an organic electroluminescence device, it is conceivable to combine it with a technique of directly forming a color filter on a sealing layer.

Republished WO 2004/034746 JP 2001-126864 A

  However, in the manufacturing method combined as described above, in the above-described conventional configuration, the temperature at the time of baking is limited, and thus there is a possibility that the degas component of the color filter may remain. If degas such as a color filter or a sealing layer remains, defects may grow over time.

  One aspect of the present invention has been made to solve the above-described problems, and an object thereof is to provide a method for manufacturing an organic electroluminescence device capable of suppressing defect growth over time.

  According to the first aspect of the present invention, a first step of forming an organic electroluminescence element on a substrate, a second step of forming a sealing layer on the organic electroluminescence element after the first step, After the second step, a third step of exposing the organic electroluminescence element to a high-temperature and high-humidity environment, a fourth step of inspecting the organic electroluminescence element, and a sealing substrate are bonded after the fourth step. There is provided a method of manufacturing an organic electroluminescence device having a fifth step.

According to the method for manufacturing the organic electroluminescence device according to the first aspect, the organic electroluminescence element covered with the sealing layer is exposed to a high-temperature and high-humidity environment, thereby causing a defect due to a degas component in a short time. it can. Therefore, defective products can be selected by the fourth step.
In addition, since defective organic electroluminescence elements are excluded before the sealing substrate is bonded, the sealing substrate is not bonded to the defective product and the sealing substrate is not wasted. Is done.

In the first aspect, the method further includes a sixth step of forming a color filter on the sealing layer between the second step and the third step. In the third step, the color filter, The sealing layer and the organic electroluminescence element may be exposed to a high temperature and high humidity environment.
According to this configuration, curing of the color filter can be promoted. Further, for example, when the color filter is formed by a photolithography process, defects due to a degas component caused by exposure to the atmosphere in the process can be generated in a short time.

In the first aspect, in the first step, a plurality of the organic electroluminescence elements are formed on the substrate, and after the fifth step, the substrate is divided into a plurality of organic electroluminescence elements. It is good also as a structure which further has the 8th process of exposing the said organic electroluminescent element to a high temperature, high-humidity environment, and the 9th process which test | inspects the said organic electroluminescent element after the said 7th process.
According to this structure, the organic electroluminescent element after division | segmentation can generate the defect by a division | segmentation process in a short time by exposing to a high temperature, high humidity environment. Therefore, it is possible to prevent the defective product from being distributed in the market by selecting the defective product.

In the first aspect, in the second step, the sealing layer having a three-layer structure of an inorganic material, an organic material, and an inorganic material may be formed.
According to this configuration, the organic electroluminescence element can be satisfactorily sealed.

  According to the second aspect of the present invention, a first step of forming a plurality of organic electroluminescent elements on a substrate, and a second step of forming a sealing layer on the organic electroluminescent elements after the first step. And after the second step, after the fifth step, after the fifth step, after the fifth step, after dividing the substrate into a plurality of organic electroluminescence elements, and after the seventh step There is provided a method for producing an organic electroluminescent element, comprising: an eighth step of exposing the organic electroluminescent element to a high temperature and high humidity environment; and a ninth step of inspecting the organic electroluminescent element.

  According to the manufacturing method of the organic electroluminescence device according to the second aspect, the organic electroluminescence element after the separation is exposed to a high temperature and high humidity environment, thereby generating a defect due to the degas component and a defect due to the separation step in a short time. Can do. Therefore, defective products can be selected.

The second aspect further includes a sixth step of forming a color filter on the sealing layer between the second step and the fifth step. In the eighth step, the color filter, The sealing layer and the organic electroluminescence element may be exposed to a high temperature and high humidity environment.
According to this configuration, curing of the color filter can be promoted. Further, for example, when the color filter is formed by a photolithography process, defects due to a degas component caused by exposure to the atmosphere in the process can be generated in a short time.

It is an equivalent circuit diagram which shows the electrical structure of an organic electroluminescent apparatus. It is a schematic plan view which shows the structure of an organic EL apparatus. It is a schematic plan view which shows arrangement | positioning of a sub pixel. FIG. 4 is a schematic cross-sectional view showing a structure of a subpixel along the line A-A ′ of FIG. 3. It is a schematic plan view which shows arrangement | positioning of the convex part and colored layer in a sub pixel. It is a flowchart which shows the manufacturing method of an organic electroluminescent apparatus. (A), (b) is a schematic sectional drawing which shows the manufacturing method of an organic electroluminescent apparatus. (A)-(f) is a schematic sectional drawing which shows the manufacturing method of an organic electroluminescent apparatus. (A)-(g) is a schematic sectional drawing which shows a division | segmentation and piece-dividing process. It is a flowchart which shows the manufacturing method of the organic electroluminescent apparatus which concerns on a 1st modification. It is a flowchart which shows the manufacturing method of the organic electroluminescent apparatus which concerns on a 2nd modification.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
In addition, in the drawings used in the following description, in order to make the features easy to understand, there are cases where the portions that become the features are enlarged for the sake of convenience, and the dimensional ratios of the respective components are not always the same as the actual ones. Absent.

  First, prior to describing a method for manufacturing an organic electroluminescence device (hereinafter referred to as an organic EL device) of the present embodiment, the structure of an organic EL device manufactured by the manufacturing method will be described with reference to FIGS. To do. 1 is an equivalent circuit diagram showing the electrical configuration of the organic EL device of the present embodiment, FIG. 2 is a schematic plan view showing the configuration of the organic EL device of the present embodiment, and FIG. 3 is a schematic plan view showing the arrangement of sub-pixels. 4 is a schematic cross-sectional view showing the structure of a subpixel along the line AA ′ in FIG. 3, and FIG. 5 is a schematic plan view showing the arrangement of convex portions and colored layers in the subpixel.

  Since the organic EL device of the present embodiment is manufactured by a manufacturing method described later, it is highly reliable in which the occurrence of defects due to the degas component is prevented.

  As shown in FIG. 1, the organic EL device 100 according to this embodiment includes a plurality of scanning lines 12 and a plurality of data lines 13 that intersect with each other, and a power supply line 14. It has a scanning line driving circuit 16 to which a plurality of scanning lines 12 are connected, and a data line driving circuit 15 to which a plurality of data lines 13 are connected. In addition, a plurality of sub-pixels 18 which are light-emitting pixels arranged in a matrix corresponding to the intersections of the plurality of scanning lines 12 and the plurality of data lines 13 are provided.

  The sub pixel 18 includes an organic EL element 30 as a light emitting element and a pixel circuit 20 that controls driving of the organic EL element 30.

  The organic EL element 30 includes a pixel electrode 31 as an anode, a counter electrode 33 as a cathode, and a functional layer 32 provided between the pixel electrode 31 and the counter electrode 33. Such an organic EL element 30 can be electrically expressed as a diode. As will be described in detail later, the functional layer 32 and the counter electrode 33 are formed as a common film extending over the plurality of subpixels 18.

  The pixel circuit 20 includes a switching transistor 21, a storage capacitor 22, and a driving transistor 23. The two transistors 21 and 23 can be configured using, for example, an n-channel or p-channel thin film transistor (TFT) or a MOS transistor.

The gate of the switching transistor 21 is connected to the scanning line 12, one of the source or drain is connected to the data line 13, and the other of the source or drain is connected to the gate of the driving transistor 23.
One of the source and drain of the driving transistor 23 is connected to the pixel electrode 31 of the organic EL element 30, and the other of the source and drain is connected to the power supply line 14. A storage capacitor 22 is connected between the gate of the driving transistor 23 and the power supply line 14.

  When the scanning line 12 is driven and the switching transistor 21 is turned on, the potential based on the image signal supplied from the data line 13 at that time is held in the storage capacitor 22 via the switching transistor 21. The on / off state of the driving transistor 23 is determined according to the potential of the storage capacitor 22, that is, the gate potential of the driving transistor 23. When the driving transistor 23 is turned on, a current corresponding to the gate potential flows from the power supply line 14 to the functional layer 32 sandwiched between the pixel electrode 31 and the counter electrode 33 via the driving transistor 23. The organic EL element 30 emits light according to the amount of current flowing through the functional layer 32.

  As shown in FIG. 2, the organic EL device 100 has an element substrate 10. The element substrate 10 is provided with a display area E0 (indicated by a one-dot chain line in the drawing) and a non-display area E3 outside the display area E0. The display area E0 has an actual display area E1 (indicated by a two-dot chain line in the figure) and a dummy area E2 surrounding the actual display area E1.

  In the actual display area E1, sub-pixels 18 as light-emitting pixels are arranged in a matrix. The sub-pixel 18 includes the organic EL element 30 as a light emitting element as described above, and blue (B), green (G), red (R) in accordance with the operation of the switching transistor 21 and the driving transistor 23. ) In any of the colors can be obtained.

  In the present embodiment, the sub-pixels 18 that can emit light of the same color are arranged in the first direction, and the second direction in which the sub-pixels 18 that can emit light of different colors intersect (orthogonal) the first direction. The so-called stripe-type sub-pixels 18 are arranged in an array. Hereinafter, the first direction is referred to as the Y direction, and the second direction is referred to as the X direction. The arrangement of the sub-pixels 18 on the element substrate 10 is not limited to the stripe method, and may be a mosaic method or a delta method.

  The dummy area E2 is provided with a peripheral circuit mainly for causing the organic EL elements 30 of the sub-pixels 18 to emit light. For example, as shown in FIG. 2, a pair of scanning line driving circuits 16 are provided extending in the Y direction at positions sandwiching the actual display area E1 in the X direction. An inspection circuit 17 is provided between the pair of scanning line driving circuits 16 at a position along the actual display area E1.

  A flexible circuit board (hereinafter referred to as FPC) 43 for electrical connection with an external drive circuit is connected to one side (the lower side in the drawing) parallel to the X direction of the element substrate 10. Yes. A driving IC 44 connected to the peripheral circuit on the element substrate 10 side through the wiring of the FPC 43 is mounted on the FPC 43. The driving IC 44 includes the data line driving circuit 15 described above, and the data line 13 and the power supply line 14 on the element substrate 10 side are electrically connected to the driving IC 44 via the FPC 43.

  Between the display area E0 and the outer edge of the element substrate 10, that is, in the non-display area E3, for example, a wiring 29 for applying a potential to the counter electrode 33 of the organic EL element 30 of each subpixel 18 and a terminal portion 40 are formed. Has been. The wiring 29 is provided on the element substrate 10 so as to surround the display area E0 except for the side portion of the element substrate 10 to which the FPC 43 is connected. The terminal portion 40 is formed on a side portion of the element substrate 10 to which the FPC 43 is connected.

  Next, the planar arrangement of the sub-pixels 18, particularly the planar arrangement of the pixel electrodes 31 will be described with reference to FIG. 3. As shown in FIG. 3, the sub-pixel 18B from which blue (B) light emission is obtained, the sub-pixel 18G from which green (G) light emission is obtained, and the sub-pixel 18R from which red (R) light emission is obtained are sequentially arranged in the X direction. Arranged. The sub-pixels 18 that can emit light of the same color are arranged adjacent to each other in the Y direction. The three sub-pixels 18B, 18G, and 18R arranged in the X direction are displayed as one pixel 19. The arrangement pitch of the sub-pixels 18B, 18G, and 18R in the X direction is less than 5 μm. Sub-pixels 18B, 18G, and 18R are arranged at intervals of 0.5 μm to 1.0 μm in the X direction. The arrangement pitch of the sub-pixels 18B, 18G, and 18R in the Y direction is less than about 10 μm.

The pixel electrode 31 in the sub-pixel 18 has a substantially rectangular shape, and the longitudinal direction is arranged along the Y direction. The pixel electrode 31 may be referred to as pixel electrodes 31B, 31G, and 31R corresponding to the emission color. An insulating film 27 is formed to cover the outer edges of the pixel electrodes 31B, 31G, and 31R. Thus, an opening 27a is formed on each pixel electrode 31B, 31G, 31R, and each of the pixel electrodes 31B, 31G, 31R is exposed in the opening 27a.
The planar shape of the opening 27a is also substantially rectangular.
In FIG. 3, the arrangement of the sub-pixels 18B, 18G, and 18R of different colors is in the order of blue (B), green (G), and red (R) from the left side in the X direction, but is not limited thereto. It is not something. For example, in the X direction, the order may be red (R), green (G), and blue (B) from the left side.

  Next, the structure of the sub-pixels 18B, 18G, and 18R will be described with reference to FIG. As shown in FIG. 4, the organic EL device 100 includes a base material 11 as a substrate in the present invention, a reflective layer 25, a transparent layer 26, pixel electrodes 31B, 31G, and 31R formed in order on the base material 11, functions. It has the layer 32 and the counter electrode 33 which is a common cathode. In addition, a sealing layer 34 covering the counter electrode 33 and a color filter 36 formed on the sealing layer 34 are included. Further, in order to protect the color filter 36, the counter substrate 41 is disposed via the transparent resin layer 42. The element substrate 10 includes the base material 11 to the color filter 36. In FIG. 4, the illustration of the configuration of the driving transistor 23 and the like of the pixel circuit 20 in the element substrate 10 is omitted.

  The organic EL device 100 employs a top emission method in which light emitted from the functional layer 32 passes through the color filter 36 and is extracted from the counter substrate 41 side. Therefore, the base material 11 can use not only a transparent substrate such as glass but also an opaque substrate such as silicon and ceramics. The counter substrate 41 is a transparent substrate such as glass.

  The reflective layer 25 formed on the substrate 11 can be made of Al (aluminum), Ag (silver), or an alloy of these light reflective metals. In the present embodiment, the light reflectance of the reflective layer 25 is preferably 40% or more, more preferably 80% or more.

  The transparent layer 26 is intended to electrically insulate the pixel electrode 31 and the reflective layer 25 that will be formed later. For example, an inorganic insulating film such as SiOx (silicon oxide) can be used. In the present embodiment, the light transmittance of the transparent layer 26 is preferably 50% or more, more preferably 80% or more.

  The pixel electrodes 31B, 31G, 31R provided on the transparent layer 26 corresponding to the sub-pixels 18B, 18G, 18R are made of a transparent conductive film such as ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The film thicknesses are different from each other. Specifically, the film thickness increases in the order of blue (B), green (G), and red (R). In the present embodiment, the light transmittance of the pixel electrodes 31B, 31G, and 31R is preferably 50% or more, more preferably 80% or more.

The functional layer 32 includes an organic light emitting layer from which white light can be obtained, and is formed in common across the sub-pixels 18B, 18G, and 18R. White light can be realized by combining organic light emitting layers that can emit blue (B), green (G), and red (R) light. Also, pseudo white light can be obtained by combining organic light emitting layers that can emit blue (B) and yellow (Y) light.
As described above, the functional layers 32 of the sub-pixels 18R, 18B, and 18G emit white light, but the optical distances in the optical resonators of the sub-pixels 18B, 18G, and 18R are different as described later. Thereby, the spectrum of the light emitted from the counter electrode 33 is different. Although the internal emission spectrum of the organic functional layer 32 can be interpreted as being the same, the spectrum of light emitted using the resonant structure is different, and therefore, for convenience, the sub-pixel 18 emits light in different wavelength regions, It is described that the pixel 18 can emit light of any one of red (R), green (G), and blue (B). Further, in the present embodiment, the sub-pixel 18 that can emit light of the same color or the sub-pixel 18 that can emit light of different colors is described according to the spectrum of light emitted using the resonance structure. It is.

  The counter electrode 33 covering the functional layer 32 is made of, for example, an MgAg (magnesium silver) alloy, and the film thickness is controlled so as to have both light transmittance and light reflectivity.

The sealing layer 34 has a structure in which a first sealing layer 34a, a planarization layer 34b, and a second sealing layer 34c are sequentially stacked from the counter electrode 33 side. The light transmittance of the sealing layer 34 is preferably 80% or more with respect to the light emitted from the sub-pixels 18R, 18B, and 18G.
The gas barrier property of the sealing layer 34 is not particularly limited as long as the organic EL element 30 can be protected from oxygen and water in the atmosphere, but the oxygen permeability is 0.01 cc / m ^2. The water vapor transmission rate is preferably 7 × 10 ⁻³ g / m ² / day or less, more preferably 5 × 10 ⁻⁴ g / m ² / day or less, particularly 5 × 10 ⁻⁶ g / m ^2. / Day or less is preferable.
The first sealing layer 34a and the second sealing layer 34c are formed using an inorganic material. As the inorganic material, it is difficult to pass moisture or oxygen, and examples thereof include SiOx (silicon oxide), SiNx (silicon nitride), SiOxNy (silicon oxynitride), and AlxOy (aluminum oxide). Examples of the method for forming the first sealing layer 34a and the second sealing layer 34c include a vacuum deposition method, an ion plating method, a sputtering method, and a CVD method. It is desirable to employ a vacuum deposition method or an ion plating method because it is difficult to damage the organic EL element 30 with heat or the like. The film thicknesses of the first sealing layer 34a and the second sealing layer 34c are 50 nm to 1000 nm, preferably 200 nm to 400 nm so that cracks and the like hardly occur during film formation and transparency is obtained.

  The planarization layer 34b has transparency, and can be formed using, for example, a heat or ultraviolet curable epoxy resin, acrylic resin, urethane resin, or silicone resin. Alternatively, a coating-type inorganic material (such as silicon oxide) may be used. The planarization layer 34 b is formed by being stacked on the first sealing layer 34 a that covers the plurality of organic EL elements 30. Since the surface of the first sealing layer 34a is uneven due to the influence of the pixel electrodes 31B, 31G, and 31R having different thicknesses, the planarization layer 34b is formed with a film thickness of 1 μm to 5 μm to alleviate the unevenness. It is preferable to do. As a result, the color filter 36 formed on the sealing layer 34 is hardly affected by the unevenness.

  The second sealing layer 34c covering the planarization layer 34b is formed using the inorganic material described above.

  The color filter 36 includes a blue (B), green (G), and red (R) colored layers 36B, 36G, and 36R formed on the sealing layer 34 by a photolithography method. The colored layers 36B, 36G, and 36R are formed corresponding to the sub-pixels 18B, 18G, and 18R, and on the sealing layer 34, the colored layers 36B, 36G, and 36R of the sub-pixels 18B, 18G, and 18R of different colors are formed. A light-transmitting convex portion 35 is provided therebetween. The height of the convex portion 35 on the sealing layer 34 is substantially equal to the film thickness of the colored layers 36B, 36G, and 36R.

In the organic EL device 100 of the present embodiment, an optical resonator is configured between the reflective layer 25 and the counter electrode 33. Since the pixel electrodes 31B, 31G, and 31R have different film thicknesses for the sub-pixels 18B, 18G, and 18R, the optical distances in the respective optical resonators are different. As a result, in each of the sub-pixels 18B, 18G, and 18R, light having a resonance wavelength corresponding to each color is obtained.
In addition, the adjustment method of the optical distance in an optical resonator is not limited to this, For example, the film thickness of the transparent layer 26 on the base material 11 and the transparent layer 26 are comprised for every sub pixel 18B, 18G, 18R. The materials may be different.

  Resonant light emitted from the optical resonators of the sub-pixels 18B, 18G, and 18R passes through the colored layers 36B, 36G, and 36R and is emitted from the transparent counter substrate 41 side. Since the color filter 36 is formed on the sealing layer 34, color mixing due to light leakage between the sub-pixels 18B, 18G, and 18R is reduced as compared with the case where the color filter 36 is formed on the counter substrate 41 side. The Such a structure of the sub-pixels 18B, 18G, and 18R can effectively reduce the color mixture as the planar size of the sub-pixels 18B, 18G, and 18R becomes smaller, that is, as the definition becomes higher.

  Next, the relationship between the convex part 35 on the sealing layer 34 and the colored layers 36B, 36G, and 36R will be described with reference to FIG.

  As shown in FIG. 5, the color filter 36 of the organic EL device 100 of the present embodiment is arranged by extending a colored layer of the same color in the Y direction. That is, the blue (B) colored layer 36 </ b> B is arranged in a stripe shape across the plurality of sub-pixels 18 </ b> B (pixel electrodes 31 </ b> B) arranged in the Y direction. Similarly, the green (G) colored layer 36 </ b> G is arranged in a stripe shape across the plurality of sub-pixels 18 </ b> G (pixel electrodes 31 </ b> G) arranged in the Y direction. The red (R) colored layer 36 </ b> R is arranged in a stripe shape across the plurality of sub-pixels 18 </ b> R (pixel electrodes 31 </ b> R) arranged in the Y direction. The boundary between the colored layers 36B, 36G, and 36R is located approximately at the center between the pixel electrodes 31 of adjacent sub-pixels 18 arranged in the X direction.

  Between the colored layers 36B, 36G, and 36R of different colors, the convex portion 35 is disposed on the sealing layer 34 so as to partition the colored layers 36B, 36G, and 36R, respectively. Therefore, on the sealing layer 34, the protrusions 35 are also arranged in stripes (stripes) so as to extend in the Y direction.

As shown in FIG. 4, the cross-sectional shape of the convex portion 35 is trapezoidal, and the bottom surface of the convex portion 35 is located between the pixel electrodes 31 of the adjacent sub-pixels 18 as shown in FIG.
The outer edge of each pixel electrode 31 is covered with an insulating film 27, and the pixel electrode 31 is in contact with the functional layer 32 in an opening 27 a provided in the insulating film 27. Since the opening 27a is a region that substantially contributes to light emission in the sub-pixel 18, the protrusion 35 may be formed so that the bottom surface of the protrusion 35 overlaps with the pixel electrode 31 other than the opening 27a.

  In this embodiment, the light-transmitting convex portion 35 is formed by a photolithography method using a photosensitive resin material that does not include a coloring material. That is, the main material of the convex part 35 and the colored layers 36B, 36G, and 36R is the same. The width of the projection 35 on the sealing layer 34 is approximately 0.5 μm to 1.0 μm (preferably the width of the bottom surface is 0.7 μm, the width of the top 35 a is 0.5 μm), and the height is approximately 1.1 μm. is there. The height of the convex portion 35 is substantially equal to the average film thickness of the colored layers 36B, 36G, and 36R.

  The film thicknesses of the colored layers 36B, 36G, and 36R may be different from each other in consideration of, for example, white balance.

  In addition, the convex part 35 is not limited to arrange | positioning in the stripe form extended in the Y direction, as shown in FIG. For example, they may be arranged in a lattice shape extending in the X direction and the Y direction so as to surround the opening 27a in the pixel electrode 31 of each subpixel 18. Moreover, you may employ | adopt the structure by which at least one part of the top part of the convex part 35 was covered with the colored layers 36R, 36G, and 36B.

(Method for manufacturing organic EL device)
Next, a method for manufacturing the organic EL device of the present embodiment will be described with reference to FIGS. FIG. 6 is a flowchart showing a method for manufacturing an organic EL device according to the present embodiment. FIGS. 7A, 7B and 8A to 8F are schematic views showing a method for manufacturing the organic EL device according to the present embodiment. It is sectional drawing.

  The organic EL device 100 according to the present embodiment is configured by forming a plurality of element substrates 10 on a large array substrate, bonding a glass substrate to the element substrate 10, and then separating the substrate. .

  Specifically, the manufacturing method of the organic EL device 100 of the present embodiment includes an organic EL element forming step (Step S1), a sealing layer forming step (Step S2), and a color filter forming step as shown in FIG. (Step S3), a high temperature and high humidity atmosphere leaving step (Step S4), an inspection step (Step S5), a protective glass laminating step (Step S6), and a dividing / dividing step (Step S7). I have.

  In the organic EL element formation step (step S1) of FIG. 6, as shown in FIG. 7A, an organic EL element 30 is formed for each element formation region 1A on the array substrate 1, and is formed in the vicinity of the element formation region 1A. A terminal portion 40 is formed. As a method of forming the terminal portion 40, the organic EL element 30 and the like on the array substrate 1, a known method can be adopted. Thereby, as shown in FIG. 7B, the organic EL element 30 including the pixel electrode 31 (31R, 31G, 31B), the functional layer 32, and the counter electrode 33 is formed in the element formation region 1A of the array substrate 1. Is done. In the following, description will be made based on cross-sectional process diagrams focusing on the element formation region 1A.

In the sealing layer forming step (step S2) in FIG. 6, first, as shown in FIG. 8A, a first sealing layer 34a covering the counter electrode 33 is formed. As a method of forming the first sealing layer 34a, for example, a method of vacuum-depositing silicon oxide can be cited. The film thickness of the first sealing layer 34a is approximately 200 nm to 400 nm.
Next, a planarization layer 34b that covers the first sealing layer 34a is formed. As a method for forming the planarizing layer 34b, for example, a solution containing a transparent epoxy resin and a solvent of the epoxy resin is used, and the solution is applied by a printing method or a spin coat method and then dried, whereby an epoxy is obtained. A planarizing layer 34b made of resin is formed. The thickness of the planarizing layer 34b is preferably 1 μm to 5 μm, and in this case, 3 μm.

Note that the planarization layer 34b is not limited to being formed using an organic material such as an epoxy resin, and as described above, a coating-type inorganic material is applied by a printing method, and is dried and baked. Alternatively, a silicon oxide film having a thickness of about 3 μm may be formed as the planarizing layer 34b.
Subsequently, a second sealing layer 34c that covers the planarization layer 34b is formed. The method of forming the second sealing layer 34c is the same as that of the first sealing layer 34a, and for example, a method of vacuum-depositing silicon oxide can be used. The film thickness of the second sealing layer 34c is also approximately 200 nm to 400 nm. Then, the process proceeds to step S3.

In the color filter forming process (step S3) in FIG. 6, the color filter 36 is formed by a photolithography process.
First, the convex portion 35 is formed on the sealing layer 34. As a method for forming the convex portion 35, a photosensitive resin material that does not contain a coloring material is applied using a spin coating method and pre-baked to form a photosensitive resin layer having a thickness of about 1 μm. The photosensitive resin material may be a positive type or a negative type. By exposing and developing the photosensitive resin layer using a photolithography method, as shown in FIG. 8B, a convex portion 35 is formed on the sealing layer 34. By adjusting the exposure and development conditions, a trapezoidal convex portion 35 is formed so that the bottom surface has a width of about 0.7 μm. The formation position of the convex portion 35 on the substrate 11 is between the pixel electrodes 31B, 31G, and 31R corresponding to the adjacent sub-pixels 18B, 18G, and 18R of different colors.

Then, as shown in FIG. 8C, a photosensitive resin material containing a green coloring material is applied to the surface of the sealing layer 34 on which the convex portions 35 are formed by a spin coating method and baked. It is made to dry and the photosensitive resin layer 50g is formed. By exposing and developing the photosensitive resin layer 50g, as shown in FIG. 8D, a colored layer 36G that fills the space between the convex portions 35 located above the pixel electrode 31G is formed.
Next, a photosensitive resin material containing a blue coloring material is applied to the surface of the sealing layer 34 on which the colored layer 36G is formed by a spin coat method, and is dried by baking to form the photosensitive resin layer 50b. Form. The colored layer 36B is formed by exposing and developing the photosensitive resin layer 50b.
Next, a photosensitive resin material containing a red coloring material is applied to the surface of the sealing layer 34 on which the colored layer 36B and the colored layer 36G are formed by a spin coat method, and is dried by baking. The conductive resin layer 50r is formed. The colored layer 36R is formed by exposing and developing the photosensitive resin layer 50r.

  Thus, as shown in FIG. 8E, a colored layer 36B is formed between the convex portions 35 located above the pixel electrode 31B, and the colored layer 36G is formed between the convex portions 35 located above the pixel electrode 31G. A colored layer 36R is formed between the protrusions 35 formed and positioned above the pixel electrode 31R.

By the way, since the functional layer 32 made of an organic material is formed below the planarizing layer 34b, the temperature during drying is limited to 120 ° C. or less in order to prevent the functional layer 32 from deteriorating. Therefore, the degas component may remain when the planarizing layer 34b is dried.
Moreover, since the organic EL element 30 contains an organic material, the temperature at the time of pre-baking (drying) is limited to 120 ° C. or less in order to prevent the organic EL element 30 from being deteriorated. Therefore, when the colored layers 35R, 36G, and 36B are dried, degas components may remain.
Furthermore, minute foreign matter may adhere to the sealing layer 34 formed as described above. This minute foreign matter may cause an extremely minute defect in the sealing layer 34 to the extent that it is not determined as a defective product in the inspection described later.

  In the case where the degas component as described above remains, if a very small defect exists in the sealing layer 34, it does not become a dark spot in the inspection before product shipment and is not determined as a defective product, but is dark after shipment. There is a possibility of causing defects over time by growing into spots.

In order to deal with such a problem, in the method of manufacturing the organic EL device according to the present embodiment, after the color filter is formed, a high temperature and high humidity atmosphere leaving step (step S4) is performed.
In the high temperature and high humidity atmosphere leaving step (step S4) of FIG. 6, the array substrate 1 having the colored layers 36R, 36G, and 36B formed in each element formation region 1A is left in a high temperature and high humidity atmosphere. Specifically, it is left for 1 hour to 80 hours in an atmosphere at a temperature of 60 ° C. to 110 ° C. and a humidity of 70% to 95%. In this embodiment, for example, the array substrate 1 is left in an environment of 85 ° C. and 85% for about 24 hours.

  When left in a high-temperature and high-humidity atmosphere, the generation of dark spots due to degas components is promoted, and defects are generated in the sealing layer 34 or the color filter 36 in a short time. That is, in the present embodiment, the defective portion is exposed by the high temperature and high humidity atmosphere leaving step (step S4). Then, it progresses to step S5.

  In the inspection process (step S5) in FIG. 6, for example, display inspection (lighting inspection of the pixel 19), electrical characteristic inspection (current is passed through the pixel 19 to inspect IV characteristics (dark spot, bright spot, unevenness, driver)). At least one of appearance inspection (presence of bubbles) is performed.

  According to this embodiment, even when a dark spot due to a degas component is generated by the high temperature and high humidity atmosphere leaving step, the organic EL element 30 that can be a defective product can be determined in advance by the inspection step. . After the inspection process, the process proceeds to step S6.

In the protective glass bonding step of FIG. 6 (step S6), as shown in FIG. 8F, a transparent resin layer 42 having adhesiveness is applied so as to cover the color filter 36. Then, the protective glass 60 is disposed opposite to the array substrate 1 coated with the transparent resin layer 42 at a predetermined position, and, for example, the protective glass 60 is pressed toward the array substrate 1 side.
Thereby, the array substrate 1 and the protective glass 60 are bonded together via the transparent resin layer 42. The transparent resin layer 42 is, for example, a thermosetting epoxy resin. The thickness of the transparent resin layer 42 is approximately 10 μm to 100 μm. After applying the protective glass 60, the process proceeds to step S7.

Next, the dividing / dividing process (step S7) in FIG. 6 will be described with reference to FIGS. 9 (a) to 9 (g). In the dividing / dividing step (step S7), the joined body 61 to which the protective glass 60 and the array substrate 1 are attached is cut into pieces to produce the base body 100A of the plurality of organic EL devices 100. To do.
First, as shown in FIG. 9A, a cut 60a (scribe line) is made in the protective glass 60 at one end side of the terminal portion 40 formed on the array substrate 1, and a bending force is applied along the cut. Then, the protective glass 60 is divided.

  Subsequently, as shown in FIG. 9B, the other end side of the terminal portion 40 in the protective glass 60 is cut by a dicing blade 62, and the glass cut by the robot hand is removed as shown in FIG. 9C. .

  Subsequently, the joined body 61 is rotated by 90 degrees, and the protective glass 60 is cut by the dicing blade 62 so as to avoid the spacer member 65 as shown in FIG. Subsequently, as shown in FIG. 9E, the joined body 61 is rotated by 90 degrees, and the array substrate 1 is cut by the dicing blade 62 on the other end side of the terminal portion 40. Subsequently, as shown in FIG. 9 (f), the joined body 61 is rotated again by 90 degrees, and the array substrate 1 is cut by inserting the dicing blade 62 through the gap 60 b of the cut protective glass 60. Thus, as shown in FIG. 9G, the base body 100A is formed from the joined body 61. After that, as shown in FIG. 2, the FPC 43 is mounted on the terminal portion 40 of the base body 100A, and the organic EL device 100 is completed.

  According to the organic EL device 100 and the manufacturing method thereof according to the first embodiment, the organic EL element 30 covered with the sealing layer 34 is exposed to a high-temperature and high-humidity environment, thereby generating defects due to degas components in a short time. Can be made. Therefore, it is possible to prevent defective products from being distributed to the market by preliminarily sorting out defective products of the organic EL device 100 through the inspection process.

  The present invention is not limited to the above-described embodiment, and can be appropriately changed without departing from the spirit or idea of the invention that can be read from the claims and the entire specification. The manufacturing method of the organic EL device and the electronic equipment to which the organic EL device is applied are also included in the technical scope of the present invention. Various modifications other than the above embodiment are conceivable. Hereinafter, a modification will be described.

(First modification)
For example, in the above-described embodiment, as shown in FIG. 10, the high temperature and high humidity atmosphere leaving step (step S8) and the inspection step (step S9) are performed after the dividing / dividing step (step S7). May be.
According to the manufacturing method of the present modified example, in the dividing / dividing step, defects caused by chipping or scratches generated in the sealing layer 34 due to chips generated during dicing of the protective glass 60 are described above. By S8 and S9, it can be sorted out in a short time.

(Second modification)
In the above embodiment, the case where the high temperature and high humidity atmosphere leaving step (step S4) and the inspection step (step S5) are performed after the color filter is formed is described as an example. The timing for performing the process and the inspection process is not limited to this.
As shown in FIG. 11, the manufacturing method of the organic EL device of this modification includes an organic EL element forming step (step S1), a sealing layer forming step (step S2), and a color filter forming step (step S3). A protective glass bonding step (step S6), a dividing / dividing step (step S7), a high temperature and high humidity atmosphere leaving step (step S8), and an inspection step (step S9) are provided.

According to the manufacturing method of this modification, a defect due to a degas component and a defect due to a scratch or chipping during dicing of the protective glass 60 are performed by a high temperature and high humidity atmosphere leaving step and an inspection step that are performed once after the dividing / dividing step. Can be sorted out in a short time.
Moreover, in the said embodiment, after a sealing layer formation process (step S2) and a color filter formation process (step S3), a high temperature, high humidity atmosphere leaving process (step S4) and an inspection process (step S5) are performed. Although the case has been described as an example, the present invention is not limited to this. The color filter forming step (step S3) may be omitted, and the high temperature and high humidity atmosphere leaving step (step S4) and the inspection step (step S5) may be performed after the sealing layer forming step (step S2). In this case, the sealing layer 34 and the organic EL element 30 are exposed to a high-temperature and high-humidity environment in the high-temperature and high-humidity leaving process (step S4), and defects due to degas such as the sealing layer 34 are detected in the inspection process (step S5). Can be sorted.

  Moreover, in the said embodiment, although the case where the some organic EL apparatus 100 was manufactured by separating into pieces the joined body 61 which bonded the protective glass 60 to the array board | substrate 1 was mentioned as an example, each organic EL apparatus 100 is shown. May be manufactured individually. That is, after the element substrates 10 are manufactured one by one, they are left in a high-temperature and high-humidity atmosphere to expose defects. According to this, since it is not necessary to affix the counter substrate 41 to the element substrate 10 that has been determined to be defective by the inspection process, it is possible to prevent the counter substrate 41 from being wasted.

  In the organic EL device 100 according to the first embodiment, the light emitting pixels provided in the actual display area E1 are sub-pixels 18B, 18G, corresponding to light emission of blue (B), green (G), and red (R). It is not limited to 18R. For example, you may provide the sub pixel 18Y from which light emission of yellow (Y) other than the said three colors is obtained. Thereby, it becomes possible to further improve color reproducibility.

DESCRIPTION OF SYMBOLS 1 ... Array substrate (substrate), 10 ... Element substrate, 30 ... Organic EL element, 34 ... Sealing layer, 36 ... Color filter, 41 ... Sealing substrate, 100 ... Organic EL apparatus

Claims (6)

A first step of forming an organic electroluminescence element on a substrate;
A second step of forming a sealing layer on the organic electroluminescence element after the first step;
After the second step, a third step of exposing the organic electroluminescence element to a high temperature and high humidity environment;
A fourth step of inspecting the organic electroluminescence element;
And a fifth step of bonding a sealing substrate after the fourth step. A sixth step of forming a color filter on the sealing layer between the second step and the third step;
The method for manufacturing an organic electroluminescent device according to claim 1, wherein in the third step, the color filter, the sealing layer, and the organic electroluminescent element are exposed to a high temperature and high humidity environment. In the first step, a plurality of the organic electroluminescence elements are formed on the substrate,
A seventh step of dividing the substrate into a plurality of organic electroluminescence elements after the fifth step;
After the seventh step, an eighth step of exposing the organic electroluminescent element to a high temperature and high humidity environment;
The method according to claim 1, further comprising: a ninth step of inspecting the organic electroluminescence element. In the said 2nd process, the said sealing layer which consists of a three-layer structure of an inorganic material, an organic material, and an inorganic material is formed. The manufacturing method of the organic electroluminescent apparatus as described in any one of Claims 1-3. A first step of forming a plurality of organic electroluminescence elements on a substrate;
A second step of forming a sealing layer on the organic electroluminescence element after the first step;
A fifth step of bonding the sealing substrate after the second step;
A seventh step of dividing the substrate into a plurality of the organic electroluminescence elements after the fifth step;
After the seventh step, an eighth step of exposing the organic electroluminescent element to a high temperature and high humidity environment;
And a ninth step of inspecting the organic electroluminescence element. A sixth step of forming a color filter on the sealing layer between the second step and the fifth step;
The method for manufacturing an organic electroluminescence device according to claim 5, wherein, in the eighth step, the color filter, the sealing layer, and the organic electroluminescence element are exposed to a high temperature and high humidity environment.

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