JP2015192074A - Solid state image pickup device, electronic apparatus, and manufacturing method of solid state image pickup device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a solid state image pickup device which corrects field curvature aberration with high accuracy, and to provide an electronic apparatus including the solid state image pickup device and a manufacturing method of the solid state image pickup device.SOLUTION: A solid state image pickup device includes: a semiconductor substrate having a first surface and a second surface, the semiconductor substrate where a bending part is formed on the first surface and a solid state image sensor is provided at the bending part on the first surface; a package storing the semiconductor substrate; and a resin layer having a third surface and a fourth surface, the resin layer where the third surface contacts with the second surface of the semiconductor substrate and the fourth surface contacts with a bottom part of the package.

Description

  The present disclosure relates to a solid-state imaging device having a solid-state imaging device (hereinafter referred to as a sensor) such as a charge coupled device (CCD) or a complementary metal oxide semiconductor (CMOS) image sensor, an electronic apparatus including the solid-state imaging device, and a solid-state imaging The present invention relates to a device manufacturing method.

  A sensor such as a CCD or CMOS image sensor is made of silicon (Si), and the imaging surface is made flat. In accordance with such a sensor, the image plane on which the lens forms an image is designed to be closer to flat by combining with an aspherical lens or the like. However, under the limited design conditions associated with the miniaturization of the camera, it is difficult to completely flatten the image plane on which the lens forms an image. It has become.

  If the sensor is curved in accordance with this field curvature aberration, the aberration is eliminated and a better image can be taken. For example, Patent Document 1 describes that a buffer material film is provided on a curved portion of a base substrate, and a sensor is provided on the buffer material film.

JP 2005-260436 A

  In Patent Document 1, since the curvature of field aberration is corrected by bending the sensor in accordance with the curved portion of the pedestal substrate, it is desirable that the curved portion of the pedestal substrate has very high accuracy. It became a factor of high cost.

  The present disclosure has been made in view of such problems, and an object thereof is a solid-state imaging device capable of correcting field curvature aberration with high accuracy, an electronic apparatus including the solid-state imaging device, and a solid-state imaging device. It is in providing the manufacturing method of.

A solid-state imaging device according to the present disclosure includes the following components (A) to (C).
(A) A semiconductor substrate having a first surface and a second surface and having a curved portion on the first surface, and a solid-state imaging device provided on the curved portion of the first surface. ) Having a third surface and a fourth surface, the third surface is in contact with the second surface of the semiconductor substrate, and the fourth surface is in contact with the bottom of the package

  In the solid-state imaging device of the present disclosure, since the solid-state imaging device is provided in the curved portion of the first surface of the semiconductor substrate, the imaging surface of the solid-state imaging device is curved. Therefore, the field curvature aberration of the image surface formed by the lens is eliminated, and a good image can be captured.

  Here, a resin layer is provided between the semiconductor substrate and the package, the third surface of the resin layer is in contact with the second surface of the semiconductor substrate, and the fourth surface is in contact with the bottom of the package. Therefore, by controlling the curved shape of the resin layer, the field curvature aberration is corrected with high accuracy.

  An electronic apparatus according to the present disclosure includes the solid-state imaging device according to the present disclosure.

  In the electronic device of the present disclosure, imaging is performed by the solid-state imaging device of the present disclosure.

The manufacturing method of the first solid-state imaging device according to the present disclosure includes the following steps (A) to (E).
(A) a first substrate having a first surface and a second surface, the first surface being provided with a solid-state imaging device, and an adhesive sheet for a B stage having a third surface and a fourth surface; The step of placing the third surface in contact (B) The step of forming a curved portion on the fourth surface of the adhesive sheet by heating and pressurizing using a convex mold (C) The semiconductor substrate and the adhesive sheet are accommodated in a package And (D) forming a cavity between the curved portion of the fourth surface and the bottom of the package. (D) providing a pressure difference between the inside and outside of the cavity to deform the semiconductor substrate and the adhesive sheet to remove the cavity. Step of forming a curved portion on the first surface of the substrate (E) Step of forming a resin layer by crosslinking the adhesive sheet by heating

The manufacturing method of the second solid-state imaging device according to the present disclosure includes the following steps (A) to (D).
(A) A semiconductor substrate having a first surface and a second surface, a solid-state imaging device provided on the first surface and a curved portion provided on the second surface is prepared, and a second surface of the semiconductor substrate, A step of forming a curved portion on the fourth surface of the adhesive sheet by arranging a B-stage adhesive sheet having three surfaces and a fourth surface in contact with the second surface and the third surface (B) Semiconductor The substrate and the adhesive sheet are accommodated in the package, and a cavity is formed between the curved portion of the fourth surface and the bottom of the package. (C) The semiconductor substrate and the adhesive sheet are deformed by providing a pressure difference inside and outside the cavity. Removing the cavity and forming a curved portion on the first surface of the semiconductor substrate (D) forming the resin layer by crosslinking the adhesive sheet by heating

The third method for manufacturing a solid-state imaging device according to the present disclosure includes the following steps (A) to (E).
(A) A semiconductor substrate having a first surface and a second surface and having a solid-state imaging device provided on the first surface is prepared, and the third surface and the fifth surface are formed on the second surface of the semiconductor substrate by nanoimprinting. And forming a first resin layer in contact with the second surface of the semiconductor substrate on the third surface and having a curved portion on the fifth surface. (B) The sixth surface and the fifth surface on the fifth surface of the first resin layer. A step of placing a B-stage adhesive sheet having four surfaces in contact with the fifth surface and the sixth surface and forming a curved portion on the fourth surface of the adhesive sheet. (C) Packaging the semiconductor substrate and the adhesive sheet (D) forming a cavity between the curved portion of the fourth surface and the bottom of the package (D) providing a pressure difference inside and outside the cavity to deform the semiconductor substrate and the adhesive sheet to remove the cavity And (E) forming a curved portion on the first surface of the semiconductor substrate. The forming a second resin layer by crosslinking, forming a resin layer having a laminated structure of the first resin layer and second resin layer

  According to the solid-state imaging device of the present disclosure or the electronic apparatus of the present disclosure, the resin layer is provided between the semiconductor substrate and the package, the third surface of the resin layer is brought into contact with the second surface of the semiconductor substrate, and the fourth surface Is brought into contact with the bottom of the package, so that the field curvature aberration can be corrected with high accuracy.

  According to the first method of manufacturing a solid-state imaging device of the present disclosure, after forming the curved portion on the fourth surface of the adhesive sheet using the convex mold, the semiconductor substrate and the adhesive sheet are accommodated in the package, and the fourth surface A cavity is formed between the curved portion and the bottom of the package. By providing a pressure difference between the inside and outside of the cavity, the semiconductor substrate and the adhesive sheet are deformed to remove the cavity, and a curved portion is formed on the first surface of the semiconductor substrate. Therefore, the solid-state imaging device of the present disclosure can be easily manufactured.

  According to the second method of manufacturing a solid-state imaging device of the present disclosure, the curved portion is formed by etching on the second surface of the semiconductor substrate, and the adhesive sheet is disposed on the second surface, whereby the first Curved portions are formed on the four surfaces. After that, the semiconductor substrate and the adhesive sheet are accommodated in the package, and a cavity is formed between the curved portion of the fourth surface and the bottom portion of the package. By providing a pressure difference between the inside and outside of the cavity, the semiconductor substrate and the adhesive sheet are deformed to remove the cavity, and a curved portion is formed on the first surface of the semiconductor substrate. Therefore, the solid-state imaging device of the present disclosure can be easily manufactured.

  According to the third method for manufacturing a solid-state imaging device of the present disclosure, after forming the first resin layer having the curved portion on the fifth surface by nanoimprinting on the second surface of the semiconductor substrate, the first resin layer By disposing the adhesive sheet on the five surfaces, a curved portion is formed on the fourth surface of the adhesive sheet. After that, the semiconductor substrate and the adhesive sheet are accommodated in the package, and a cavity is formed between the curved portion of the fourth surface and the bottom portion of the package. By providing a pressure difference between the inside and outside of the cavity, the semiconductor substrate and the adhesive sheet are deformed to remove the cavity, and a curved portion is formed on the first surface of the semiconductor substrate. Therefore, the solid-state imaging device of the present disclosure can be easily manufactured.

  Note that the effects described here are not necessarily limited, and may be any effects described in the present disclosure.

It is sectional drawing showing the structure of the solid-state imaging device which concerns on 1st Embodiment of this indication. FIG. 2 is a cross-sectional view illustrating a method of manufacturing the solid-state imaging device illustrated in FIG. 1 in order of steps. FIG. 3 is a cross-sectional view illustrating a process following FIG. 2. FIG. 4 is a cross-sectional view illustrating a process following FIG. 3. FIG. 5 is a cross-sectional view illustrating a process following FIG. 4. FIG. 6 is a cross-sectional view illustrating a process following FIG. 5. FIG. 7 is a cross-sectional view illustrating a process following FIG. 6. It is sectional drawing showing the structure of the solid-state imaging device which concerns on 2nd Embodiment of this indication. FIG. 9 is a cross-sectional view illustrating a method of manufacturing the solid-state imaging device illustrated in FIG. 8 in order of steps. FIG. 10 is a cross-sectional diagram illustrating a process following the process in FIG. 9. FIG. 11 is a cross-sectional diagram illustrating a process following the process in FIG. 10. It is sectional drawing showing the structure of the solid-state imaging device which concerns on 3rd Embodiment of this indication. It is sectional drawing showing the manufacturing method of the solid-state imaging device shown in FIG. FIG. 14 is a cross-sectional diagram illustrating a process following the process in FIG. 13. FIG. 15 is a cross-sectional view illustrating a process following FIG. 14. FIG. 16 is a cross-sectional diagram illustrating a process following the process in FIG. 15. 10 is a cross-sectional view illustrating a configuration of a solid-state imaging device according to Modification 1. FIG. It is sectional drawing showing the structure of the solid-state imaging device which concerns on 4th Embodiment of this indication. It is sectional drawing showing the manufacturing method of the solid-state imaging device shown in FIG. 18 in order of a process. FIG. 20 is a cross-sectional diagram illustrating a process following the process in FIG. 19. FIG. 21 is a cross-sectional diagram illustrating a process following the process in FIG. 20. FIG. 22 is a cross-sectional diagram illustrating a process following the process in FIG. 21. 10 is a cross-sectional view illustrating a configuration of a solid-state imaging device according to Modification 2. FIG. It is sectional drawing showing the structure of the solid-state imaging device which concerns on 5th Embodiment of this indication. FIG. 25 is a cross-sectional view illustrating a method of manufacturing the solid-state imaging device illustrated in FIG. 24 in the order of steps. FIG. 26 is a cross-sectional diagram illustrating a process following the process in FIG. 25. FIG. 27 is a cross-sectional diagram illustrating a process following the process in FIG. 26. FIG. 28 is a cross-sectional diagram illustrating a process following the process in FIG. 27. FIG. 29 is a cross-sectional diagram illustrating a process following the process in FIG. 28. It is a figure for demonstrating an effect | action of the solid-state imaging device shown in FIG. It is a figure for demonstrating an effect | action of the solid-state imaging device shown in FIG. It is sectional drawing showing the modification of the holding member shown in FIG. It is sectional drawing showing the other modification of the holding member shown in FIG. FIG. 25 is a cross-sectional view illustrating still another modification of the holding member illustrated in FIG. 24. It is sectional drawing showing the modification of the solid-state imaging device shown in FIG. It is sectional drawing showing the structure of the solid-state imaging device which concerns on 6th Embodiment of this indication. FIG. 37 is a cross-sectional view illustrating a method of manufacturing the solid-state imaging device illustrated in FIG. 36 in the order of steps. FIG. 38 is a cross-sectional diagram illustrating a process following the process in FIG. 37. FIG. 39 is a cross-sectional diagram illustrating a process following the process in FIG. 38. FIG. 40 is a cross-sectional diagram illustrating a process following the process in FIG. 39. FIG. 41 is a cross-sectional diagram illustrating a process following the process in FIG. 40. FIG. 42 is a cross-sectional diagram illustrating a process following the process in FIG. 41. It is a functional block diagram of a solid-state imaging device. It is a functional block diagram of the electronic device which concerns on an application example.

Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. The order of explanation is as follows.
1. First Embodiment (Solid-State Imaging Device: A Semiconductor Substrate and an Adhesive Sheet are Accommodated in a Package Having a Through Hole at the Bottom, and the Semiconductor Substrate and Adhesive Sheet are Deformed by Vacuum Adsorption Using the Through Hole Example of forming a curved portion on the first surface)
2. Second Embodiment (Solid-State Imaging Device; Semiconductor Substrate and Adhesive Sheet are Accommodated in a Package without a Through-Hole at the Bottom in Vacuum, and the Semiconductor Substrate and Adhesive Sheet are Deformed by Release to the Air Example of forming a curved portion on one surface)
3. Third Embodiment (Solid-State Imaging Device; Example of Forming Curved Part on Second Surface of Semiconductor Substrate by Etching)
4). Modification 1 (Solid-state imaging device; combination of the third embodiment and the second embodiment)
5. Fourth Embodiment (Solid-State Imaging Device; Example in which First Resin Layer is Formed on Second Surface of Semiconductor Substrate and Curved Part is Formed on Fifth Surface of First Resin Layer by Nanoimprinting)
6). Modification 2 (Solid-state imaging device; combination of the fourth embodiment and the second embodiment)
7). Fifth Embodiment (Solid-state imaging device; example in which a semiconductor substrate is held by a holding member with a resin layer and accommodated in a package, and a through hole of the holding member is filled with an embedded layer having the same reflectance as the holding member)
8). Sixth embodiment (solid-state imaging device; example in which a semiconductor substrate and a holding member are directly joined without using a resin layer)
9. 9. Example of overall configuration of solid-state imaging device Application examples (examples of electronic devices)

(First embodiment)
FIG. 1 illustrates a cross-sectional configuration of the solid-state imaging device 1 according to the first embodiment of the present disclosure. The solid-state imaging device 1 is used for electronic devices such as a digital still camera and a video camera, and has a configuration in which a semiconductor substrate 10 having a solid-state imaging element (sensor) 11 is accommodated in a package 20. .

  The semiconductor substrate 10 is, for example, a chip of the solid-state imaging device 11 that is separated from a silicon (Si) wafer (not shown). The semiconductor substrate 10 has a first surface P1 and a second surface P2. The first surface P1 is provided with the solid-state imaging device 11, and the second surface P2 is fixed to the bottom portion 21 of the package 21 by the resin layer 30. Yes.

  The solid-state imaging device 11 is provided on the curved portion R1 of the first surface P1. The bending portion R1 reduces the curvature of field aberration of the image surface formed by a lens (not shown) by bending the image pickup surface 11A of the solid-state image pickup device 11, thereby enabling good image pickup. It is. The curved portion R1 is, for example, a concave portion that has an arc shape in a cross section in the thickness direction of the semiconductor substrate 10 and has a bowl-shaped curved surface in three dimensions.

  The solid-state image sensor 11 is a CMOS image sensor, for example. The configuration of the solid-state imaging device 11 is not particularly limited. For example, the solid-state imaging device 11 may have a two-dimensional arrangement of pixels including photodiodes and color filters on the first surface P1 of the semiconductor substrate 10. In addition, the solid-state imaging device 11 includes, for example, a photoelectric conversion element and a photodiode stacked in one pixel in the thickness direction of the semiconductor substrate 10, and performs photoelectric conversion by selectively detecting light in different wavelength ranges. A so-called longitudinal spectroscopic type may be used. In either case, the solid-state imaging device 11 may be a backside illumination type or a frontside illumination type.

  The thickness D of the semiconductor substrate 10 is preferably 50 μm or less, for example. When the thickness of the semiconductor substrate 10 is reduced to 50 μm or less, the stress of the semiconductor substrate 10 can be reduced, and the semiconductor substrate 10 can be easily deformed in a manufacturing process described later. The thickness of the semiconductor substrate 10 is more preferably 30 μm or less, and further preferably 25 μm or less. The thickness of the semiconductor substrate 10 is preferably, for example, 10 μm or more so that the gettering effect is not lost to the extent that the solid-state imaging device 11 can be formed.

  The package 20 accommodates the semiconductor substrate 11 and is made of ceramic, plastic, or the like. The package 20 has an opening 22 facing the bottom 21, and the opening 22 is sealed with a sealing glass 40. A wire W is connected between the semiconductor substrate 10 and the package 20 by, for example, a wire bond such as a gold wire.

  A through hole 23 is provided in the bottom 21 of the package 20. The through hole 23 is used as a suction hole for vacuum suction in a manufacturing method described later. The through hole 23 is preferably provided at the center of the bottom 21, for example.

  The resin layer 30 has a function as an adhesive layer for fixing the semiconductor substrate 10 to the bottom 21 of the package 20. The resin layer 30 controls the shape of the curved portion R1 of the first surface P1 of the semiconductor substrate 10 by controlling the shape of the resin layer 30 and enables highly accurate correction of field curvature aberration. .

  That is, the resin layer 30 has a third surface P3 and a fourth surface P4, the third surface P3 is in contact with the second surface P2 of the semiconductor substrate 10, and the fourth surface P4 is in contact with the bottom portion 21 of the package 20. . Thereby, in this solid-state imaging device 1, it is possible to correct the field curvature aberration with high accuracy without providing expensive components such as a pedestal substrate having a curved portion.

  The resin layer 30 is formed by crosslinking a B-stage adhesive sheet, for example, a DAF (die attachment film) material. The B-stage adhesive sheet is an intermediate stage of the reaction of the thermosetting resin that can be bonded while holding a thin semiconductor device, and is softened (deformable) by heat. Cross-linking starts from above the temperature. As a material for such a B-staged adhesive sheet, that is, the resin layer 30, for example, an epoxy resin is preferable. In addition to an epoxy resin, an acrylic resin or a cyan resin may be used.

  The second surface P2 of the semiconductor substrate 10 and the third surface P3 of the resin layer 30 respectively have curved portions R2 and R3 that follow the curved portion R1 of the first surface P1. The fourth surface P4 of the resin layer 30 has a shape that follows the shape of the bottom portion 21 of the package 20. That is, the fourth surface P4 is a flat surface.

  The correction amount A of the field curvature aberration of the solid-state image sensor 11 is preferably, for example, 50 μm or less. Here, the correction amount A refers to the degree of curvature of the third surface P3 of the resin layer 30, that is, the difference between the maximum value and the minimum value of the thickness of the resin layer 30 from the bottom 21 of the package 20. When the correction amount A is larger than 50 μm, the temperature changes due to a difference in CTE (linear expansion coefficient) between silicon (Si) constituting the semiconductor substrate 10 and the DAF material constituting the resin layer 30. And stress may occur, and the curved portion R3 may be deformed.

  The accuracy of the correction amount A of the field curvature aberration is preferably within the focal depth of a lens (not shown). This is because when the accuracy of the correction amount A is not within the focal depth of the lens, the shifted portion is blurred in the image. Desirable accuracy is given by the formula of Fno × d × 2 (Fno is the F value of the lens, and d is the pixel size of the solid-state imaging device 11). For example, when the F value Fno of the lens is 2.0 and the pixel size d is 2 μm, it is desirable that 2 × 2 × 2 = 8 μm and the correction amount A has an accuracy of plus or minus 8 μm. Actually, since the object is to correct field aberrations, it is more desirable that the correction amount A has an accuracy of about one-fourth, that is, plus or minus 2 μm.

  For example, the solid-state imaging device 1 can be manufactured as follows.

  2 to 7 show the manufacturing method of the solid-state imaging device 1 in the order of steps. First, the semiconductor substrate 10 in the state of a silicon wafer (not shown) is prepared, the solid-state imaging device 11 is formed on the first surface P1 of the semiconductor substrate 10, the second surface P2 is polished, and the semiconductor substrate 10 is thinned. Turn into. Next, the solid-state imaging device 11 is separated into pieces with the semiconductor substrate 10 placed on a B-stage adhesive sheet 30A made of a DAF material. As a result, as shown in FIG. 2, the semiconductor substrate 10, that is, the chip of the solid-state imaging device 11 that is separated into pieces, is formed.

  As shown in FIG. 2, the semiconductor substrate 10 has a first surface P1 and a second surface P2, and the solid-state imaging device 11 is provided on the first surface P1. The adhesive sheet 30A has a third surface P3 and a fourth surface P4. The semiconductor substrate 10 and the adhesive sheet 30A are arranged with the second surface P2 and the third surface P3 in contact with each other.

  Next, as shown in FIG. 3, while applying heat H1 at a temperature at which the adhesive sheet 30A can be deformed without crosslinking, the convex mold 50 is brought into contact with the fourth surface P4 of the adhesive sheet 30A and pressure P is applied. Then, the adhesive sheet 30A is deformed and cooled. Thereby, as shown in FIG. 4, the curved portion R4 is formed on the fourth surface P4 of the adhesive sheet 30A.

  After that, as shown in FIG. 5, a package 20 having a through hole 23 in the bottom 21 is prepared, and the semiconductor substrate 10 and the adhesive sheet 30 </ b> A are accommodated in the package 20 so as to be reversed. Thereby, a cavity G is formed between the curved portion R4 of the fourth surface P4 and the bottom portion 21 of the package 20. The cavity G communicates with the external atmosphere via the through hole 23.

  Subsequently, as shown in FIG. 6, by providing a pressure difference inside and outside the cavity G, the semiconductor substrate 10 and the adhesive sheet 30A are deformed to remove the cavity G, and the first surface P1 of the semiconductor substrate 10 is curved. Part R1 is formed. The fourth surface P4 of the adhesive sheet 30A is in contact with the bottom portion 21 of the package 20.

  Specifically, as shown in FIG. 5, by performing vacuum suction VA using the through-hole 23 while applying heat H2, the cavity G is evacuated and the atmospheric pressure AP is applied to the semiconductor substrate 10 and the adhesive sheet 30A. The cavity G is removed by deforming the semiconductor substrate 10 and the adhesive sheet 30A. In addition, it is preferable that the heat H2 is set at a relatively low temperature so that the adhesive sheet 30A is not excessively deformed. In this way, as shown in FIG. 6, it is possible to form the curved portion R1 reflecting the shape of the original curved portion R4 with high accuracy on the first surface P1 of the semiconductor substrate.

  After that, the adhesive sheet 30A is heated to a crosslinking temperature or higher to crosslink the adhesive sheet 30A to form the resin layer 30. As a result, the semiconductor substrate 10 is fixed to the bottom 21 of the package 20 by the resin layer 30.

  Finally, as shown in FIG. 7, a wire W is connected between the semiconductor substrate 10 and the package 20 by wire bonding, and the opening 22 of the package 20 is sealed with a sealing glass 40. As described above, the solid-state imaging device 1 shown in FIG. 1 is completed.

  In the solid-state imaging device 1, since the solid-state imaging device 11 is provided in the curved portion R1 of the first surface P1 of the semiconductor substrate 10, the imaging surface 11A of the solid-state imaging device 11 is curved. Therefore, the field curvature aberration of the image plane formed by the lens (not shown) is eliminated, and a good image can be captured.

  Here, the resin layer 30 is provided between the semiconductor substrate 10 and the package 20, the third surface P 3 of the resin layer 30 is in contact with the second surface P 2 of the semiconductor substrate 10, and the fourth surface P 4 is the bottom portion 21 of the package 20. Is in contact with Therefore, by controlling the curved shape of the resin layer 30, the field curvature aberration is corrected with high accuracy.

  Thus, in the present embodiment, the resin layer 30 is provided between the semiconductor substrate 10 and the package 20, the third surface P3 of the resin layer 30 is brought into contact with the second surface P2 of the semiconductor substrate 10, and the fourth surface P4. Is brought into contact with the bottom portion 21 of the package 20, so that the field curvature aberration can be corrected with high accuracy.

(Second Embodiment)
FIG. 8 illustrates a cross-sectional configuration of a solid-state imaging device 1A according to the second embodiment of the present disclosure. The solid-state imaging device 1A has the above-described first embodiment except that the through-hole 23 is not provided in the bottom 21 of the package 20 and the bottom 21 is constituted by a spatially continuous member. It has the same structure, operation and effect as the above. Accordingly, the corresponding components will be described with the same reference numerals.

  In the present embodiment, as described above, the bottom portion 21 of the package 20 does not have the through hole 23 and is constituted by a spatially continuous member. Therefore, peeling due to the intrusion of moisture from the through hole 23 is suppressed, and the reliability of the solid-state imaging device 11 is improved. In addition, it is possible to reduce the possibility that the through hole 23 is reflected on the imaging surface 11A of the solid-state imaging device 11 depending on the state of light when the image is taken. In addition, it is also possible to avoid the intrusion of moisture from the through hole 23 by closing the through hole 23 at the final stage of the manufacturing process.

  This solid-state imaging device 1A can be manufactured as follows, for example.

  9 to 11 show the manufacturing method of the solid-state imaging device 10A in the order of steps. In addition, the process which overlaps with 1st Embodiment is demonstrated with reference to FIG. 2 thru | or 4 and FIG.

  First, similarly to the first embodiment, the semiconductor substrate 10 and the adhesive sheet 30A are disposed in contact with the second surface P2 and the third surface P3 by the process shown in FIG. The semiconductor substrate 10 has a first surface P1 and a second surface P2, and the solid-state imaging element 11 is provided on the first surface P1. The adhesive sheet 30A has a third surface P3 and a fourth surface P4.

  Next, in the same manner as in the first embodiment, the curved portion is formed on the fourth surface P4 of the adhesive sheet 30A by the heating H1 and the pressure P using the convex mold 50 by the steps shown in FIGS. R4 is formed.

  Subsequently, as shown in FIG. 9, using a mounting apparatus having a chamber structure, a package 20 made of a member having a spatially continuous bottom 21 is installed in a chamber 60, and a semiconductor substrate is disposed above the package 20. 10 and the adhesive sheet 30 </ b> A are reversed and held, and the vacuum exhaust E in the chamber 60 is performed.

  After that, as shown in FIG. 10, the semiconductor substrate 10 and the adhesive sheet 30 </ b> A are accommodated in the package 20 in a vacuum V. As a result, a vacuum V cavity G is formed between the curved portion R4 of the fourth surface P4 and the bottom portion 21 of the package 20.

  Subsequently, as shown in FIG. 11, atmospheric pressure AP is applied to the semiconductor substrate 10 and the adhesive sheet 30A by the atmospheric release AR to deform the semiconductor substrate 10 and the adhesive sheet 30A, thereby removing the cavity G. A curved portion R1 is formed on the first surface P1. The fourth surface P4 of the adhesive sheet 30A is in contact with the bottom portion 21 of the package 20.

  Specifically, as shown in FIG. 10, the chamber 60 is released to the atmosphere while applying heat H2, and the atmospheric pressure AP is applied to the semiconductor substrate 10 and the adhesive sheet 30A using the negative pressure inside the cavity G. By appropriately controlling the way of applying the atmospheric pressure AP at that time, the semiconductor substrate 10 and the adhesive sheet 30A are deformed to remove the cavity G. In addition, it is preferable that the heat H2 is set at a relatively low temperature so that the adhesive sheet 30A is not excessively deformed. By doing so, as shown in FIG. 11, it is possible to form the curved portion R1 reflecting the shape of the original curved portion R4 with high accuracy on the first surface P1 of the semiconductor substrate.

  After that, the adhesive sheet 30A is heated to a crosslinking temperature or higher to crosslink the adhesive sheet 30A to form the resin layer 30. As a result, the semiconductor substrate 10 is fixed to the bottom 21 of the package 20 by the resin layer 30.

  Finally, similarly to the first embodiment, the wire W is connected by wire bonding between the semiconductor substrate 10 and the package 20 and the opening 22 of the package 20 is sealed by the process shown in FIG. Seal with glass 40. Thus, the solid-state imaging device 1A shown in FIG. 8 is completed.

  In the solid-state imaging device 1A, as in the first embodiment, since the solid-state imaging device 11 is provided on the curved portion R1 of the first surface P1 of the semiconductor substrate 10, the imaging surface 11A of the solid-state imaging device 11 is It is curved. Therefore, the field curvature aberration of the image plane formed by the lens (not shown) is eliminated, and a good image can be captured.

  A resin layer 30 is provided between the semiconductor substrate 10 and the package 20, the third surface P 3 of the resin layer 30 is in contact with the second surface P 2 of the semiconductor substrate 10, and the fourth surface P 4 is on the bottom 21 of the package 20. It touches. Therefore, by controlling the curved shape of the resin layer 30, the field curvature aberration is corrected with high accuracy.

  Further, the bottom portion 21 of the package 20 is formed of a spatially continuous member, that is, the through hole 23 is not provided in the bottom portion 21. Therefore, peeling due to the intrusion of moisture from the through hole 23 is suppressed, and the reliability of the solid-state imaging device 11 is improved. In addition, when the image is captured, the risk that the through hole 23 is reflected on the imaging surface 11A of the solid-state imaging device 11 is reduced due to the state of light.

  Thus, in the present embodiment, as in the first embodiment, the resin layer 30 is provided between the semiconductor substrate 10 and the package 20, and the third surface P <b> 3 of the resin layer 30 is the second surface of the semiconductor substrate 10. Since the fourth surface P4 is brought into contact with the bottom 21 of the package 20 in contact with the surface P2, the field curvature aberration can be corrected with high accuracy.

  In addition, since the through hole 23 is not provided in the bottom portion 21 of the package 20 and is configured by a spatially continuous member, peeling due to moisture intrusion from the through hole 23 is suppressed, and the solid-state imaging device 11 Reliability can be increased. In addition, it is possible to reduce the possibility that the through-hole 23 is reflected on the imaging surface 11A of the solid-state imaging device 11 depending on the state of light when taking an image, and to improve the imaging quality.

(Third embodiment)
FIG. 12 illustrates a cross-sectional configuration of a solid-state imaging device 1B according to the third embodiment of the present disclosure. In the first embodiment, the curved shape of the curved portion R1 of the first surface P1 of the semiconductor substrate 10 is controlled by controlling the shape of the resin layer 30, whereas the present embodiment is a semiconductor By controlling the shape of the substrate 10 itself, the curved shape of the curved portion R1 of the first surface P1 of the semiconductor substrate 10 is controlled so that the field curvature aberration can be corrected with high accuracy. Except for this, the solid-state imaging device 1B has the same configuration as that of the first embodiment.

  In the solid-state imaging device 1B, the first surface P1 of the semiconductor substrate 10 has a curved portion R1, and the second surface P2 of the semiconductor substrate 10, the third surface P3 and the fourth surface P4 of the resin layer 30 are formed on the package 20. It has a shape that follows the bottom 21, that is, has a flat surface.

  The correction amount A of the field curvature aberration of the solid-state imaging device 11 is preferably, for example, 50 μm or less, as in the first embodiment. In the present embodiment, the correction amount A refers to the degree of curvature of the curved portion R1 of the first surface P1 of the semiconductor substrate 10, that is, the difference between the maximum value and the minimum value of the thickness of the semiconductor substrate 10. When the correction amount A is larger than 50 μm, the temperature changes due to a difference in CTE (linear expansion coefficient) between silicon (Si) constituting the semiconductor substrate 10 and the DAF material constituting the resin layer 30. And stress may occur, and the curved portion R3 may be deformed.

  This solid-state imaging device 1B can be manufactured as follows, for example.

  13 to 16 show the manufacturing method of the solid-state imaging device 1B in the order of steps. The manufacturing method of the present embodiment is different from the manufacturing method of the first embodiment in the method of forming the curved portion R4 on the fourth surface P4 of the adhesive sheet 30A. That is, in the first embodiment, the curved portion R4 is formed on the fourth surface P4 of the adhesive sheet 30A using the convex mold 50. On the other hand, in the present embodiment, the curved portion R2 is formed on the second surface P2 of the semiconductor substrate 10 by etching, and the adhesive sheet 30A is bonded along the curved portion R2, whereby the adhesive sheet 30A has a first shape. A curved portion R4 reflecting the shape of the curved portion R2 is formed on the four surfaces P4.

  First, the semiconductor substrate 10 in the state of a silicon wafer (not shown) is prepared, the solid-state imaging device 11 is formed on the first surface P1 of the semiconductor substrate 10, the second surface P2 is polished, and the semiconductor substrate 10 is thinned. Turn into. Next, as shown in FIG. 13, a curved portion R2 is formed on the second surface P2 by three-dimensional etching using a gradation mask.

  Subsequently, the solid-state imaging device 11 is separated into pieces with the semiconductor substrate 10 placed on a B-stage adhesive sheet 30A made of a DAF material. As a result, as shown in FIG. 14, the semiconductor substrate 10, that is, the chip of the solid-state imaging device 11 that is separated into pieces, is formed.

  As shown in FIG. 14, the semiconductor substrate 10 has a first surface P1 and a second surface P2, the solid-state imaging device 11 is provided on the first surface P1, and the curved portion R2 is provided on the second surface P2. ing. The adhesive sheet 30A has a third surface P3 and a fourth surface P4. The semiconductor substrate 10 and the adhesive sheet 30A are arranged with the second surface P2 and the third surface P3 in contact with each other. On the third surface P3 and the fourth surface P4 of the adhesive sheet 30A, curved portions R3 and R4 are formed following the shape of the curved portion R2.

  After that, as shown in FIG. 15, a package 20 having a through hole 23 in the bottom 21 is prepared, and the semiconductor substrate 10 and the adhesive sheet 30 </ b> A are accommodated in the package 20 with the front and back reversed. At this time, a cavity G is formed between the curved portion R4 of the fourth surface P4 and the bottom portion 21 of the package 20. The cavity G communicates with the external atmosphere via the through hole 23.

  Subsequently, as shown in FIG. 16, by providing a pressure difference between the inside and outside of the cavity G, the semiconductor substrate 10 and the adhesive sheet 30 </ b> A are deformed to remove the cavity G, and the first surface P <b> 1 of the semiconductor substrate 10 is curved. Part R1 is formed. The fourth surface P4 of the adhesive sheet 30A is in contact with the bottom portion 21 of the package 20.

  Specifically, as shown in FIG. 15, by performing vacuum suction VA using the through hole 23 while applying heat H2, the cavity G is evacuated and the atmospheric pressure AP is applied to the semiconductor substrate 10 and the adhesive sheet 30A. The cavity G is removed by deforming the semiconductor substrate 10 and the adhesive sheet 30A. In addition, it is preferable that the heat H2 is set at a relatively low temperature so that the adhesive sheet 30A is not excessively deformed. In this way, as shown in FIG. 16, it is possible to form the curved portion R1 reflecting the shape of the original curved portion R4 with high accuracy on the first surface P1 of the semiconductor substrate.

  After that, the adhesive sheet 30A is heated to a crosslinking temperature or higher to crosslink the adhesive sheet 30A to form the resin layer 30. As a result, the semiconductor substrate 10 is fixed to the bottom 21 of the package 20 by the resin layer 30.

  Finally, as shown in FIG. 12, a wire W is connected between the semiconductor substrate 10 and the package 20 by wire bonding, and the opening 22 of the package 20 is sealed with a sealing glass 40. Thus, the solid-state imaging device 1B shown in FIG. 12 is completed.

  The operations and effects of the solid-state imaging device 1B are the same as those in the first embodiment.

(Modification 1)
As shown in FIG. 17, the solid-state imaging device 1 </ b> B is configured by a spatially continuous member without providing the through hole 23 in the bottom portion 21 of the package 20, as in the second embodiment. Is also possible. The manufacturing method in that case is the same as in the second embodiment. Thereby, in addition to the effect of the first embodiment, it is possible to obtain the same operation and effect as those of the second embodiment.

(Fourth embodiment)
FIG. 18 illustrates a cross-sectional configuration of a solid-state imaging device 1C according to the fourth embodiment of the present disclosure. In the solid-state imaging device 1 </ b> C, the resin layer 30 has a two-layer structure including a first resin layer 31 and a second resin layer 32, and the first surface P <b> 1 of the semiconductor substrate 10 is controlled by controlling the shape of the first resin layer 31. The curved shape of the curved portion R1 is controlled to enable highly accurate correction of field curvature aberration. Except for this, the solid-state imaging device 1C has the same configuration as that of the first embodiment.

  In the present embodiment, as described above, the resin layer 30 has a two-layer structure of the first resin layer 31 and the second resin layer 32. The first resin layer 31 is provided on the semiconductor substrate 10 side in the resin layer 30 and has a third surface P3 and a fifth surface P5. The second resin layer 32 is provided on the package 20 side in the resin layer 30 and has a sixth surface P6 and a fourth surface P4. The second resin layer 32 is formed by crosslinking a B-stage adhesive sheet 30A, for example, a DAF material.

  The second surface P2 of the semiconductor substrate 10 and the third surface P3 of the first resin layer 31 have curved portions R2 and R3, respectively. The fifth surface P5 of the first resin layer 31 and the sixth surface P6 and the fourth surface P4 of the second resin layer 32 have a shape that follows the bottom 21 of the package 20, that is, are flat surfaces.

  The correction amount A of the field curvature aberration of the solid-state imaging device 11 is preferably, for example, 50 μm or less, as in the first embodiment. In the present embodiment, the correction amount A refers to the degree of bending of the bending portion R3 of the third surface P3 of the first resin layer 31, that is, the difference between the maximum value and the minimum value of the thickness of the first resin layer 31. When the correction amount A is larger than 50 μm, it is caused by a difference in CTE (linear expansion coefficient) between silicon (Si) constituting the semiconductor substrate 10 and the material of the first resin layer 31 or the second resin layer 32. If the temperature changes, stress is generated and the bending portion R3 may be deformed.

  The solid-state imaging device 1C can be manufactured, for example, as follows.

  19 to 22 show the manufacturing method of the solid-state imaging device 1C in the order of steps. The manufacturing method of the present embodiment is different from the manufacturing method of the first embodiment in the method of forming the curved portion R4 on the fourth surface P4 of the adhesive sheet 30A. That is, in the first embodiment, the curved portion R4 is formed on the fourth surface P4 of the adhesive sheet 30A using the convex mold 50. On the other hand, in the present embodiment, the curved portion R5 is formed by nanoimprinting on the fifth surface P5 of the first resin layer 31, and the adhesive sheet 30A is bonded along the curved portion R5, thereby bonding the adhesive sheet 30A. A curved portion R4 reflecting the shape of the curved portion R5 is formed on the fourth surface P4.

  First, the semiconductor substrate 10 in the state of a silicon wafer (not shown) is prepared, the solid-state imaging device 11 is formed on the first surface P1 of the semiconductor substrate 10, the second surface P2 is polished, and the semiconductor substrate 10 is thinned. Turn into. Next, as shown in FIG. 19, the first resin layer 31 is formed on the second surface P2 of the semiconductor substrate 10 by the nanoimprint method. The first resin layer 31 has a third surface P3 and a fifth surface P5, the third surface is in contact with the second surface P2 of the semiconductor substrate 10, and a curved portion R5 is provided on the fifth surface P5.

  Specifically, a resin layer (not shown) made of an ultraviolet curable resin is formed on the second surface P2 of the semiconductor substrate 10, and this resin layer is brought into contact with a mold (not shown) to emit ultraviolet light. After irradiation, release from the mold. Thus, the first resin layer 31 having the curved portion R5 is formed on the fifth surface P5.

  Subsequently, the solid-state imaging device 11 is separated into pieces with the semiconductor substrate 10 placed on a B-stage adhesive sheet 30A made of a DAF material. As a result, as shown in FIG. 20, the semiconductor substrate 10, that is, the chip of the solid-state imaging device 11 separated into pieces, is formed.

  As shown in FIG. 20, the adhesive sheet 30A has a sixth surface P6 and a fourth surface P4. The first resin layer 31 and the adhesive sheet 30A are arranged with the fifth surface P5 and the sixth surface P6 in contact with each other. Accordingly, a curved portion R4 is formed on the fourth surface P4 of the adhesive sheet 30A, following the shape of the curved portion R5.

  After that, as shown in FIG. 21, a package 20 having a through hole 23 in the bottom 21 is prepared, and the semiconductor substrate 10 and the adhesive sheet 30 </ b> A are accommodated in the package 20 while being reversed. At this time, a cavity G is formed between the curved portion R4 of the fourth surface P4 and the bottom portion 21 of the package 20. The cavity G communicates with the external atmosphere via the through hole 23.

  Subsequently, as shown in FIG. 22, by providing a pressure difference inside and outside the cavity G, the semiconductor substrate 10 and the adhesive sheet 30A are deformed to remove the cavity G, and the first surface P1 of the semiconductor substrate 10 is curved. Part R1 is formed. The fourth surface P4 of the adhesive sheet 30A is in contact with the bottom portion 21 of the package 20.

  Specifically, as shown in FIG. 21, by performing vacuum suction VA using the through hole 23 while applying heat H2, the cavity G is evacuated and the atmospheric pressure AP is applied to the semiconductor substrate 10 and the adhesive sheet 30A. The cavity G is removed by deforming the semiconductor substrate 10 and the adhesive sheet 30A. In addition, it is preferable that the heat H2 is set at a relatively low temperature so that the adhesive sheet 30A is not excessively deformed. In this way, as shown in FIG. 22, it is possible to form the curved portion R1 reflecting the shape of the original curved portion R4 with high accuracy on the first surface P1 of the semiconductor substrate.

  After that, the adhesive sheet 30A is heated to a crosslinking temperature or higher to crosslink the adhesive sheet 30A to form the resin layer 30. As a result, the semiconductor substrate 10 is fixed to the bottom 21 of the package 20 by the resin layer 30.

  Finally, as shown in FIG. 18, a wire W is connected between the semiconductor substrate 10 and the package 20 by wire bonding, and the opening 22 of the package 20 is sealed with a sealing glass 40. Thus, the solid-state imaging device 1C illustrated in FIG. 18 is completed.

  The operation and effect of the solid-state imaging device 1C are the same as those in the first embodiment.

(Modification 2)
In the solid-state imaging device 1C, as shown in FIG. 23, similarly to the second embodiment, the through hole 23 is not provided in the bottom portion 21 of the package 20, and it is configured by a spatially continuous member. Is also possible. The manufacturing method in that case is the same as in the second embodiment. Thereby, in addition to the effect of the first embodiment, it is possible to obtain the same operation and effect as those of the second embodiment.

(Fifth embodiment)
FIG. 24 illustrates a cross-sectional configuration of a solid-state imaging device 1D according to the fifth embodiment of the present disclosure. The solid-state imaging device 1D has a configuration in which, for example, the semiconductor substrate 10 having the solid-state imaging element 11 is held on a holding member (pedestal) 70 by a resin layer 30 and accommodated in a package 20. Hereinafter, the same components as those in the first embodiment will be described with the same reference numerals.

  As in the first embodiment, the semiconductor substrate 10 is a chip of the solid-state imaging device 11 that is separated from, for example, a silicon (Si) wafer (not shown). The semiconductor substrate 10 has a first surface P <b> 1 and a second surface P <b> 2, the solid-state imaging device 11 is provided on the first surface P <b> 1, and the second surface P <b> 2 is bonded to the resin layer 30.

  The solid-state imaging device 11 is a CMOS image sensor provided on the curved portion R1 of the first surface P1 as in the first embodiment. Similar to the first embodiment, the curved portion R1 has an arc shape in the cross section in the thickness direction of the semiconductor substrate 10, and has a bowl-shaped curved surface in three dimensions. About the structure of the solid-state image sensor 11, it is the same as that of 1st Embodiment.

  The package 20 is configured in the same manner as in the first embodiment except that the package 20 does not have the through hole 23 in the bottom portion 21. The sealing glass 40 and the wire W are configured in the same manner as in the first embodiment.

  The resin layer 30 has a function as an adhesive layer for fixing the semiconductor substrate 10 to the holding member 70. The third surface P3 of the resin layer 30 is bonded to the second surface P2 of the semiconductor substrate 10. The fourth surface P4 of the resin layer 30 is bonded to the upper surface P7 of the holding member 70. The resin layer 30 is formed by crosslinking a B-stage adhesive sheet, for example, a DAF material, as in the first embodiment. The material of the resin layer 30 is the same as that in the first embodiment.

  The holding member 70 holds the semiconductor substrate 10 and controls the curved shape of the curved portion R1 of the first surface P1 of the semiconductor substrate 10 to correct field curvature aberration. For example, silicon (Si), resin It is made of metal and ceramic. The holding member 70 has a curved portion R7 on the upper surface P7. The curved portion R7 has an arc shape in the cross section in the thickness direction of the holding member 70, and has a bowl-shaped curved surface in three dimensions. Thus, the first surface P1 and the second surface P2 of the semiconductor substrate 10 and the third surface P3 and the fourth surface P4 of the resin layer 30 are curved in a shape that follows the curved portion R7 of the upper surface P7 of the holding member 70. Portions R1, R2, R3, and R4 are formed.

  Further, the holding member 70 is provided with a through hole 71. The through hole 71 is used as a suction hole for vacuum suction in a manufacturing method described later. For example, the through hole 71 is preferably provided at the center of the bowl-shaped three-dimensional curved surface of the holding member 70.

  The through hole 71 is preferably embedded with an embedded layer 72 made of a material having the same reflectance as that of the holding member 70. Thereby, the in-plane output difference of the solid-state imaging device 11 due to the through hole 71 can be reduced, and unevenness of the image can be suppressed.

  This solid-state imaging device 1D can be manufactured as follows, for example.

  25 to 29 show the manufacturing method of the solid-state imaging device 1D in the order of steps. In addition, the process which overlaps with 1st Embodiment is demonstrated with reference to FIG.

  First, similarly to the first embodiment, the solid-state imaging device 11 is formed on the first surface P1 of the semiconductor substrate 10 and the second surface P2 is polished by the process shown in FIG. Thin film. Next, the solid-state imaging device 11 is separated into individual pieces with the semiconductor substrate 10 placed on a B-stage adhesive sheet 30A made of a DAF material by the process shown in FIG.

  Subsequently, as illustrated in FIG. 25, the semiconductor substrate 10 and the adhesive sheet 30 </ b> A are installed on the upper surface P <b> 7 of the holding member 70. The fourth surface P4 of the adhesive sheet 30A is in contact with only the peripheral edge of the upper surface P7 of the holding member 70, and there is a cavity G between the fourth surface P4 of the adhesive sheet 30A and the curved portion R7 of the upper surface P7 of the holding member 70. Has occurred. The cavity G communicates with the external atmosphere via the through hole 71 of the holding member 70.

  After that, as shown in FIG. 26, the semiconductor substrate 10, the adhesive sheet 30A, and the holding member 70 are placed in a chamber (not shown), and evacuation E is performed. Thereby, a pressure difference arises inside and outside the cavity G, the semiconductor substrate 10 and the adhesive sheet 30A are deformed, and the cavity G is removed.

  In this way, the fourth surface P4 of the adhesive sheet 30A comes into contact with the upper surface P7 of the holding member 70 as shown in FIG. On the first surface P1 and the second surface P2 of the semiconductor substrate 10, and on the third surface P3 and the fourth surface P4 of the adhesive sheet 30A, the curved portions R1, which follow the shape of the curved portion R7 of the upper surface P7 of the holding member 70. R2, R3, and R4 are formed, respectively.

  Subsequently, the adhesive sheet 30 </ b> A is crosslinked to form the resin layer 30 by heating the adhesive sheet 30 </ b> A to a crosslinking temperature or higher. Thereby, the semiconductor substrate 10 is fixed to the upper surface P <b> 7 of the holding member 70 by the resin layer 30.

  Subsequently, as shown in FIG. 28, a buried layer 72 made of a material having the same reflectance as that of the holding member 70 is formed in the through hole 71 of the holding member 70. After that, as shown in FIG. 29, planarization such as polishing is performed, and a portion protruding from the through hole 71 of the buried layer 72 is removed.

  Finally, as shown in FIG. 24, the holding member 70 is accommodated in the package 20, the wire W is connected between the semiconductor substrate 10 and the package 20 by wire bonding, and the opening 22 of the package 20 is sealed glass. Seal with 40. Thus, the solid-state imaging device 1D illustrated in FIG. 24 is completed.

  In the solid-state imaging device 1D, as in the first embodiment, since the solid-state imaging device 11 is provided in the curved portion R1 of the first surface P1 of the semiconductor substrate 10, the imaging surface 11A of the solid-state imaging device 11 is It is curved. Therefore, the field curvature aberration of the image plane formed by the lens (not shown) is eliminated, and a good image can be captured.

  At this time, as shown in FIG. 30, the incident light h1 passes through the semiconductor substrate 10 and the resin layer 30, and is reflected by the upper surface P7 of the holding member 70 to generate reflected light h2. Further, since the buried layer 72 is provided in the through hole 71, the incident light h1 passes through the semiconductor substrate 10 and the resin layer 30, and is reflected by the buried layer 72 as shown in FIG. h3 is generated. Since the buried layer 72 is made of a material having the same reflectance as that of the holding member 70, the light amounts of the reflected lights h2 and h3 are equal. Therefore, there is no difference in output between the portion on the through hole 71 of the solid-state imaging device 11 and the other portion, and the unevenness of the image is eliminated.

  Thus, in the present embodiment, the semiconductor substrate 10 is held by the holding member 70 by the resin layer 30 and accommodated in the package 20, and the through hole 71 of the holding member 70 is formed by the embedded layer 72 having the same reflectivity as the holding member 70. Since the filling is performed, the in-plane output difference of the solid-state imaging device 11 due to the through-hole 71 can be reduced, and unevenness of the image can be suppressed.

  In the above embodiment, as shown in FIG. 24, the case where the diameter φ of the through hole 71 is equal in the longitudinal direction of the through hole 71 has been described. However, as shown in FIG. 32, it is preferable that the opening diameter φA of the through hole 71 on the package 20 side is larger than the opening diameter φB of the through hole 71 on the semiconductor substrate 10 side. As a result, it is possible to easily embed the buried layer 72 in the through hole 71.

  In the above embodiment, as shown in FIG. 24, the through hole 71 is provided in parallel to the normal line N of the imaging surface 11A of the solid-state imaging device 11 and perpendicular to the bottom 21 of the package 20. Explained the case. However, as illustrated in FIG. 33, the through hole 71 may be provided obliquely with respect to the normal direction N of the imaging surface 11 </ b> A of the solid-state imaging device 11. Alternatively, as illustrated in FIG. 34, the through hole 71 may have a bent portion 71C between the opening 71B on the semiconductor substrate 10 side and the opening 71A on the package 20 side. By doing so, the positions of the openings 71A and 71B are different in the in-plane direction of the solid-state image pickup device 11, the in-plane output difference of the solid-state image pickup device 11 due to the through hole 71 is reduced, and unevenness of the image is suppressed. Is possible.

  Furthermore, in the above embodiment, as shown in FIG. 24, the case where the embedded layer 72 made of a material having the same reflectance as that of the holding member 70 is embedded in the through hole 71 has been described. However, the region of the package 20 where the through hole 71 is located may be made of a material having the same reflectance as that of the holding member 70. For example, as shown in FIG. 35, an upper surface layer 24 made of a material having the same reflectance as that of the holding member 70 may be provided on the upper surface of the bottom portion 21 of the package 20. As a result, the bottom of the through hole 71 is closed by the upper surface layer 24 having the same reflectance as that of the holding member 70, so that the reflectance of the vertical light component becomes equal, and the in-plane of the solid-state imaging device 11 caused by the through hole 71. It is possible to reduce the output difference and suppress image unevenness.

  In addition, this embodiment can be combined with the first to fourth embodiments. For example, in the first embodiment, an embedded layer (not shown) having the same reflectance as that of the package 20 may be provided in the through hole 23 of the package 20. As a result, as in the present embodiment, the in-plane output difference of the solid-state imaging device 11 due to the through-hole 23 can be reduced, and image unevenness can be suppressed.

  The embedded layer 72 may not be provided in the through hole 71, and the opening diameter φA on the semiconductor substrate 10 side of the through hole 71 may be set to a size of about one pixel of the solid-state imaging element 11. In this way, since the range in which the output difference is generated is about one pixel, unevenness of the image can be suppressed by making this pixel a correction target in the image processing unit (not shown).

  Moreover, in the said embodiment, the case where the resin layer 30 was comprised by what bridge | crosslinked the B-stage-shaped adhesive sheet, for example, DAF material, was demonstrated. Furthermore, it is preferable that the resin layer 30 is made of a cross-linked DAF material having a light shielding property. Thereby, reflected light can be reduced, output difference can be suppressed, and unevenness of an image can be eliminated. In the first to fourth embodiments, the same effect can be obtained even when the resin layer 30 is formed by cross-linking a light-shielding DAF material.

  As a DAF material having a light shielding property, for example, a DAF material mixed with a material that absorbs light in the near-infrared region, or a material that absorbs light in the near-infrared region between the DAF material. Is mentioned. Examples of the material that absorbs light in the near infrared region include carbon, ITO, or ATO fine particles, or a near infrared absorbing dye.

(Sixth embodiment)
FIG. 36 illustrates a cross-sectional configuration of a solid-state imaging apparatus 1E according to the sixth embodiment of the present disclosure. The solid-state imaging device 1E has a configuration in which, for example, the semiconductor substrate 10 having the solid-state imaging element 11 is directly bonded to the holding member 70 and is accommodated in the package 20 without sandwiching the resin layer 30 or an adhesive. ing. Hereinafter, the same components as those in the first or fifth embodiment will be described with the same reference numerals.

  As in the first embodiment, the semiconductor substrate 10 is a chip of the solid-state imaging device 11 that is separated from, for example, a silicon (Si) wafer (not shown). The semiconductor substrate 10 has a first surface P1 and a second surface P2, and the solid-state imaging device 11 is provided on the first surface P1. The second surface P2 is directly joined to the holding member 70 without sandwiching the resin layer 30 or the adhesive. Thereby, in this solid-state imaging device 1E, the heat from the solid-state imaging device 11 can be efficiently released to the holding member 70 side, and it is possible to suppress the deterioration of the device characteristics due to the heat. Further, reflection at the interface between the semiconductor substrate 10 and the holding member 70 is suppressed, and image quality can be improved.

  The package 20 is configured in the same manner as in the first embodiment except that the package 20 does not have the through hole 23 in the bottom portion 21. The sealing glass 40 and the wire W are configured in the same manner as in the first embodiment. Since the through-hole 23 is not provided in the package 20, it is possible to reduce the in-plane output difference of the solid-state imaging device 11 due to the through-hole 23 and suppress image unevenness.

  The holding member 70 holds the semiconductor substrate 10, controls the curved shape of the curved portion R1 of the first surface P1 of the semiconductor substrate 10, and corrects the curvature of field aberration. The holding member 70 has a curved portion R7 on the upper surface R7. The curved portion R7 has an arc shape in the cross section in the thickness direction of the holding member 70, and has a bowl-shaped curved surface in three dimensions. Accordingly, curved portions R1, R2, R3, and R4 having shapes that follow the curved portion R7 of the upper surface P7 of the holding member 70 are formed on the first surface P1 and the second surface P2 of the semiconductor substrate 10, respectively. Further, the holding member 70 is not provided with the through hole 71. Therefore, it is possible to reduce the in-plane output difference of the solid-state imaging device 11 due to the through-hole 71 and suppress image unevenness.

  The holding member 70 preferably has a thermal conductivity equal to or higher than that of the semiconductor substrate 10, and is preferably made of, for example, silicon (Si). Thereby, it becomes possible to improve a heat dissipation characteristic.

  This solid-state imaging device 1E can be manufactured as follows, for example.

  37 to 42 show the manufacturing method of the solid-state imaging device 1E in the order of steps. In addition, the process which overlaps with 1st Embodiment is demonstrated with reference to FIG.

  First, as shown in FIG. 37, a holding member 70 made of silicon (Si) and having a curved portion R7 on the upper surface P7 is prepared, and plasma or an ion beam is applied to the upper surface P7 of the holding member 70. Activation processing AC50 is performed.

  Similarly to the first embodiment, the solid-state imaging device 11 is formed on the first surface P1 of the semiconductor substrate 10 and the second surface P2 is polished by the process shown in FIG. Thin film. Next, the solid-state imaging device 11 is separated into individual pieces with the semiconductor substrate 10 placed on a B-stage adhesive sheet 30A made of a DAF material by the process shown in FIG.

  Subsequently, as shown in FIG. 38, the protective tape 11B is laminated on the first surface P1 of the semiconductor substrate 10, that is, the surface on which the solid-state imaging device 11 is formed, and the protective sheet 30A is peeled off.

  After that, as shown in FIG. 39, the activation process AC10 is performed on the second surface P2 of the semiconductor substrate 10 using plasma or an ion beam, and the second surface P2 of the semiconductor substrate 10 is oxidized. The oxidation method of the second surface P2 of the semiconductor substrate 10 may be any method as long as it is an oxidation method that does not affect surface protection.

  Subsequently, as shown in FIG. 40, the first surface P1 side of the semiconductor substrate 10 to which the protective tape 11B is attached is adsorbed (arrow A1) with the male jig 11C, and the second surface P2 of the semiconductor substrate 10 is The upper surface P7 of the protection member 50 is joined (arrow A2).

  As a result, as shown in FIG. 41, the second surface P2 of the semiconductor substrate 10 is directly joined to the holding member 70 without sandwiching the resin layer 30, the adhesive, or the like. On the first surface P1 and the second surface P2 of the semiconductor substrate 10, curved portions R1 and R2 that follow the shape of the curved portion R7 on the upper surface P7 of the holding member 70 are formed. A direct bonding interface layer 11 </ b> D is formed between the second surface P <b> 2 of the semiconductor substrate 10 and the upper surface P <b> 7 of the holding member 70.

  After that, as shown in FIG. 42, the protective tape 11B is peeled off. Finally, as shown in FIG. 36, the holding member 70 is accommodated in the package 20, the wire W is connected between the semiconductor substrate 10 and the package 20, and the opening 22 of the package 20 is sealed glass. Seal with 40. Thus, the solid-state imaging device 1E shown in FIG. 36 is completed.

  In the solid-state imaging device 1E, as in the first embodiment, since the solid-state imaging device 11 is provided in the curved portion R1 of the first surface P1 of the semiconductor substrate 10, the imaging surface 11A of the solid-state imaging device 11 is It is curved. Therefore, the field curvature aberration of the image plane formed by the lens (not shown) is eliminated, and a good image can be captured.

  Further, since the second surface P2 of the semiconductor substrate 10 is directly bonded to the holding member 70 without sandwiching the resin layer 30 or the adhesive, the heat generated in the solid-state imaging device 11 is efficiently held by the holding member 70. The device characteristics are reduced by heat and the deterioration of device characteristics due to heat is suppressed.

  As described above, in the present embodiment, the second surface P2 of the semiconductor substrate 10 is directly joined to the holding member 70 without sandwiching the resin layer 30, the adhesive, or the like. It is possible to efficiently release heat to the holding member 70 side and suppress deterioration of device characteristics due to heat.

(Overall configuration of solid-state imaging device)
FIG. 43 illustrates the overall configuration of the solid-state imaging devices 1 and 1A to 1E (hereinafter, represented by the solid-state imaging device 1) described in the above embodiment. The solid-state imaging device 1 includes a pixel unit 110 serving as an imaging pixel region, and a circuit unit 130 including, for example, a row scanning unit 131, a horizontal selection unit 133, a column scanning unit 134, and a system control unit 132. The circuit unit 130 may be provided in a peripheral region of the pixel unit 110 or may be provided so as to be stacked with the pixel unit 110 (in a region facing the pixel unit 110).

  The pixel unit 110 includes, for example, a plurality of pixels PXL that are two-dimensionally arranged in a matrix. In the pixel PXL, for example, pixel drive lines Lread (specifically, row selection lines and reset control lines) are wired for each pixel row, and vertical signal lines Lsig are wired for each pixel column. The pixel drive line Lread transmits a drive signal for reading a signal from the pixel. One end of the pixel drive line Lread is connected to an output end corresponding to each row of the row scanning unit 131.

  The row scanning unit 131 includes a shift register, an address decoder, and the like, and is a pixel driving unit that drives each pixel PXL of the pixel unit 110 in units of rows, for example. A signal output from each pixel PXL in the pixel row selected and scanned by the row scanning unit 131 is supplied to the horizontal selection unit 133 through each of the vertical signal lines Lsig. The horizontal selection unit 133 is configured by an amplifier, a horizontal selection switch, and the like provided for each vertical signal line Lsig.

  The column scanning unit 134 includes a shift register, an address decoder, and the like, and drives each of the horizontal selection switches of the horizontal selection unit 133 in order while scanning. By the selective scanning by the column scanning unit 134, the signal of each pixel PXL transmitted through each of the vertical signal lines Lsig is sequentially transmitted to the horizontal signal line 135 and output through the horizontal signal line 135.

  The system control unit 132 receives a clock supplied from the outside, data for instructing an operation mode, and the like, and outputs data such as internal information of the solid-state imaging device 1. The system control unit 132 further includes a timing generator that generates various timing signals. The row scanning unit 131, the horizontal selection unit 133, the column scanning unit 134, and the like are based on the various timing signals generated by the timing generator. Drive control is performed.

(Application example)
The solid-state imaging device 1 according to the above-described embodiment can be applied to all types of electronic devices having an imaging function, such as a camera system such as a digital still camera and a video camera, and a mobile phone having an imaging function. FIG. 44 shows a schematic configuration of the electronic apparatus 2 (camera) as an example. The electronic device 2 is, for example, a video camera capable of shooting a still image or a moving image. For example, the electronic device 2 is a solid-state imaging device 1, an optical system (imaging lens) 310, a shutter device 311, the solid-state imaging device 1, and the shutter device 311. A drive unit 313 (including the circuit unit 130), a signal processing unit 312, a user interface 314, and a monitor 315.

  The optical system 310 guides image light (incident light) from a subject to the pixel unit 110 of the solid-state imaging device 1. The optical system 310 may be composed of a plurality of optical lenses. The shutter device 311 controls the light irradiation period and the light shielding period for the solid-state imaging device 1. The drive unit 313 controls the transfer operation of the solid-state imaging device 1 and the shutter operation of the shutter device 311. The signal processing unit 312 performs various types of signal processing on the signal output from the solid-state imaging device 1. The video signal Dout after the signal processing is output to the monitor 315. Alternatively, the video signal Dout may be stored in a storage medium such as a memory. The user interface 314 can specify a shooting scene (dynamic range specification, wavelength (terahertz, visible, infrared, ultraviolet, X-ray, etc.) specification, and the like (input signal from the user interface 314). Is sent to the drive unit 313, and based on this, the solid-state imaging device 1 performs desired imaging.

  As described above, the embodiments have been described. However, the present disclosure is not limited to the above-described embodiments, and various modifications can be made.

  For example, in the above-described embodiment, the case where the solid-state imaging devices 1 and 1A to 1E are applied to a camera is illustrated, but other than this, for example, an endoscope, a vision chip (artificial retina), a biosensor, etc. It can be used for all electronic devices that image (electromagnetic waves).

  In addition, the solid-state imaging devices 1 and 1A to 1E of the above-described embodiment may not include all the constituent elements described in the above-described embodiments, and conversely may include other constituent elements.

  In addition, the effect described in this specification is an illustration to the last, and is not limited, Moreover, there may exist another effect.

The present technology can also be configured as follows.
(1)
A semiconductor substrate having a first surface and a second surface and having a curved portion on the first surface, and a solid-state imaging device provided on the curved portion of the first surface;
A package containing the semiconductor substrate;
A solid-state imaging device comprising: a third surface and a fourth surface, wherein the third surface is in contact with a second surface of the semiconductor substrate, and the fourth surface is in contact with a bottom portion of the package.
(2)
The solid-state imaging device according to (1), wherein the semiconductor substrate has a thickness of 50 μm or less.
(3)
The solid-state imaging device according to (1) or (2), wherein a correction amount of field curvature aberration of the solid-state imaging element is 50 μm or less.
(4)
The solid-state imaging device according to any one of (1) to (3), wherein the resin layer is formed by crosslinking a B-stage adhesive sheet.
(5)
The solid-state imaging device according to any one of (1) to (4), wherein the resin layer is made of an epoxy resin.
(6)
The second surface of the semiconductor substrate and the third surface of the resin layer each have a curved portion,
The solid-state imaging device according to any one of (1) to (5), wherein the fourth surface of the resin layer has a shape that follows a shape of a bottom portion of the package.
(7)
The solid-state imaging device according to any one of (1) to (6), wherein the bottom portion of the package has a through hole.
(8)
The solid-state imaging device according to any one of (1) to (6), wherein the bottom portion of the package is configured by a spatially continuous member.
(9)
The solid-state imaging device according to any one of (1) to (7), wherein the second surface of the semiconductor substrate and the third surface and the fourth surface of the resin layer have a shape that follows the bottom of the package. .
(10)
The resin layer has a two-layer structure of a first resin layer having the third surface and the fifth surface and a second resin layer having the sixth surface and the fourth surface. (1) to (7) The solid-state imaging device according to any one of the above.
(11)
The solid-state imaging device according to (10), wherein the second resin layer is formed by crosslinking a B-stage adhesive sheet.
(12)
The second surface of the semiconductor substrate and the third surface of the first resin layer each have a curved portion,
The solid-state imaging device according to (10) or (11), wherein the fifth surface of the first resin layer and the sixth surface and the fourth surface of the second resin layer have a shape that follows a bottom of the package. .
(13)
A solid-state imaging device;
The solid-state imaging device
A semiconductor substrate having a first surface and a second surface and having a curved portion on the first surface, and a solid-state imaging device provided on the curved portion of the first surface;
A package containing the semiconductor substrate;
An electronic apparatus comprising: a third surface and a fourth surface, wherein the third surface is in contact with a second surface of the semiconductor substrate, and the fourth surface is in contact with a bottom portion of the package.
(14)
A semiconductor substrate having a first surface and a second surface, and a solid-state image sensor provided on the first surface, and an adhesive sheet for a B stage having a third surface and a fourth surface, the second surface and the Placing the third surface in contact;
Forming a curved portion on the fourth surface of the adhesive sheet by heating and pressurizing using a convex mold;
Storing the semiconductor substrate and the adhesive sheet in a package, and forming a cavity between the curved portion of the fourth surface and the bottom of the package;
Providing a pressure difference inside and outside the cavity to deform the semiconductor substrate and the adhesive sheet to remove the cavity and forming a curved portion on the first surface of the semiconductor substrate;
And a step of crosslinking the adhesive sheet by heating to form a resin layer.
(15)
The semiconductor substrate and the adhesive sheet are accommodated in the package having a through hole at the bottom,
The cavity is evacuated by heating and vacuum suction using the through hole, and the semiconductor substrate and the adhesive sheet are subjected to atmospheric pressure to deform the semiconductor substrate and the adhesive sheet to remove the cavity. (14) The manufacturing method of the solid-state imaging device according to (14).
(16)
By accommodating the semiconductor substrate and the adhesive sheet in the package made of a member whose bottom is spatially continuous in a vacuum, the cavity is evacuated,
The manufacturing method of the solid-state imaging device according to (14), wherein the cavity is removed by applying atmospheric pressure to the semiconductor substrate and the adhesive sheet by releasing the atmosphere to deform the semiconductor substrate and the adhesive sheet.
(17)
A semiconductor substrate having a first surface and a second surface, a solid-state imaging device provided on the first surface, and a curved portion provided by etching on the second surface, and a B having a third surface and a fourth surface Forming a curved portion on the fourth surface of the adhesive sheet by disposing the adhesive sheet of the stage in contact with the second surface and the third surface;
Storing the semiconductor substrate and the adhesive sheet in a package, and forming a cavity between the curved portion of the fourth surface and the bottom of the package;
Providing a pressure difference inside and outside the cavity to deform the semiconductor substrate and the adhesive sheet to remove the cavity and forming a curved portion on the first surface of the semiconductor substrate;
And a step of crosslinking the adhesive sheet by heating to form a resin layer.
(18)
A semiconductor substrate having a first surface and a second surface and having a solid-state imaging device provided on the first surface is prepared, and the third surface and the fifth surface are formed on the second surface of the semiconductor substrate by nanoimprinting. And forming a first resin layer in contact with the second surface of the semiconductor substrate on the third surface and having a curved portion on the fifth surface;
A B-stage adhesive sheet having a sixth surface and a fourth surface is disposed on the fifth surface of the first resin layer so that the fifth surface and the sixth surface are in contact with each other. Forming a curved portion on the fourth surface;
Storing the semiconductor substrate and the adhesive sheet in a package, and forming a cavity between the curved portion of the fourth surface and the bottom of the package;
Providing a pressure difference inside and outside the cavity to deform the semiconductor substrate and the adhesive sheet to remove the cavity and forming a curved portion on the first surface of the semiconductor substrate;
Forming a second resin layer by crosslinking the adhesive sheet by heating, and forming a resin layer having a laminated structure of the first resin layer and the second resin layer.

  DESCRIPTION OF SYMBOLS 1,1A-1E ... Solid-state imaging device, 10 ... Semiconductor substrate, 11 ... Solid-state image sensor, 11A ... Imaging surface, 20 ... Package, 21 ... Bottom part, 22 ... Opening, 23 ... Through-hole, 30 ... Resin layer, 30A ... Adhesive sheet, 31 ... first resin layer, 32 ... second resin layer, 40 ... sealing glass, 50 ... convex mold, 60 ... chamber, 70 ... holding member, 71 ... through hole, 72 ... embedded layer, 1 ... Solid-state imaging device, 2 ... electronic device, AP ... atmospheric pressure, G ... cavity, P1 ... first surface, P2 ... second surface, P3 ... third surface, P4 ... fourth surface, P5 ... fifth surface, P6 ... Sixth surface, P7 ... upper surface, R1, R2, R3, R4, R5, R6, R7 ... curved portion, V ... vacuum, W ... wire.

Claims (18)

A semiconductor substrate having a first surface and a second surface and having a curved portion on the first surface, and a solid-state imaging device provided on the curved portion of the first surface;
A package containing the semiconductor substrate;
A solid-state imaging device comprising: a third surface and a fourth surface, wherein the third surface is in contact with a second surface of the semiconductor substrate, and the fourth surface is in contact with a bottom portion of the package. The solid-state imaging device according to claim 1, wherein the semiconductor substrate has a thickness of 50 μm or less. The solid-state imaging device according to claim 1, wherein a correction amount of field curvature aberration of the solid-state imaging element is 50 μm or less. The solid-state imaging device according to claim 1, wherein the resin layer is formed by crosslinking a B-stage adhesive sheet. The solid-state imaging device according to claim 1, wherein the resin layer is made of an epoxy resin. The second surface of the semiconductor substrate and the third surface of the resin layer each have a curved portion,
The solid-state imaging device according to claim 1, wherein the fourth surface of the resin layer has a shape that follows a shape of a bottom portion of the package. The solid-state imaging device according to claim 1, wherein the bottom portion of the package has a through hole. The solid-state imaging device according to claim 1, wherein the bottom portion of the package is configured by a spatially continuous member. The solid-state imaging device according to claim 1, wherein the second surface of the semiconductor substrate and the third surface and the fourth surface of the resin layer have a shape that follows the bottom of the package. The solid-state imaging device according to claim 1, wherein the resin layer has a two-layer structure of a first resin layer having the third surface and the fifth surface and a second resin layer having the sixth surface and the fourth surface. . The solid-state imaging device according to claim 10, wherein the second resin layer is formed by crosslinking a B-staged adhesive sheet. The second surface of the semiconductor substrate and the third surface of the first resin layer each have a curved portion,
The solid-state imaging device according to claim 10, wherein the fifth surface of the first resin layer and the sixth surface and the fourth surface of the second resin layer have a shape that follows a bottom portion of the package. A solid-state imaging device;
The solid-state imaging device
A semiconductor substrate having a first surface and a second surface and having a curved portion on the first surface, and a solid-state imaging device provided on the curved portion of the first surface;
A package containing the semiconductor substrate;
An electronic apparatus comprising: a third surface and a fourth surface, wherein the third surface is in contact with a second surface of the semiconductor substrate, and the fourth surface is in contact with a bottom portion of the package. A semiconductor substrate having a first surface and a second surface, and a solid-state image sensor provided on the first surface, and an adhesive sheet for a B stage having a third surface and a fourth surface, the second surface and the Placing the third surface in contact;
Forming a curved portion on the fourth surface of the adhesive sheet by heating and pressurizing using a convex mold;
Storing the semiconductor substrate and the adhesive sheet in a package, and forming a cavity between the curved portion of the fourth surface and the bottom of the package;
Providing a pressure difference inside and outside the cavity to deform the semiconductor substrate and the adhesive sheet to remove the cavity and forming a curved portion on the first surface of the semiconductor substrate;
And a step of crosslinking the adhesive sheet by heating to form a resin layer. The semiconductor substrate and the adhesive sheet are accommodated in the package having a through hole at the bottom,
The vacuum is applied to the cavity by heating and vacuum suction using the through-hole, and atmospheric pressure is applied to the semiconductor substrate and the adhesive sheet to deform the semiconductor substrate and the adhesive sheet to remove the cavity. Item 15. A method for manufacturing a solid-state imaging device according to Item 14. By accommodating the semiconductor substrate and the adhesive sheet in the package made of a member whose bottom is spatially continuous in a vacuum, the cavity is evacuated,
The method for manufacturing a solid-state imaging device according to claim 14, wherein atmospheric pressure is applied to the semiconductor substrate and the adhesive sheet by releasing the air to deform the semiconductor substrate and the adhesive sheet to remove the cavity. A semiconductor substrate having a first surface and a second surface, a solid-state imaging device provided on the first surface, and a curved portion provided by etching on the second surface, and a B having a third surface and a fourth surface Forming a curved portion on the fourth surface of the adhesive sheet by disposing the adhesive sheet of the stage in contact with the second surface and the third surface;
Storing the semiconductor substrate and the adhesive sheet in a package, and forming a cavity between the curved portion of the fourth surface and the bottom of the package;
Providing a pressure difference inside and outside the cavity to deform the semiconductor substrate and the adhesive sheet to remove the cavity and forming a curved portion on the first surface of the semiconductor substrate;
And a step of crosslinking the adhesive sheet by heating to form a resin layer. A semiconductor substrate having a first surface and a second surface and having a solid-state imaging device provided on the first surface is prepared, and the third surface and the fifth surface are formed on the second surface of the semiconductor substrate by nanoimprinting. And forming a first resin layer in contact with the second surface of the semiconductor substrate on the third surface and having a curved portion on the fifth surface;
A B-stage adhesive sheet having a sixth surface and a fourth surface is disposed on the fifth surface of the first resin layer so that the fifth surface and the sixth surface are in contact with each other. Forming a curved portion on the fourth surface;
Storing the semiconductor substrate and the adhesive sheet in a package, and forming a cavity between the curved portion of the fourth surface and the bottom of the package;
Providing a pressure difference inside and outside the cavity to deform the semiconductor substrate and the adhesive sheet to remove the cavity and forming a curved portion on the first surface of the semiconductor substrate;
Forming a second resin layer by crosslinking the adhesive sheet by heating, and forming a resin layer having a laminated structure of the first resin layer and the second resin layer.

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