JP2015179769A - 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法 - Google Patents
半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法 Download PDFInfo
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- JP2015179769A JP2015179769A JP2014057053A JP2014057053A JP2015179769A JP 2015179769 A JP2015179769 A JP 2015179769A JP 2014057053 A JP2014057053 A JP 2014057053A JP 2014057053 A JP2014057053 A JP 2014057053A JP 2015179769 A JP2015179769 A JP 2015179769A
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/93—Batch processes
- H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/54486—Located on package parts, e.g. encapsulation, leads, package substrate
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
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JP2014057053A JP2015179769A (ja) | 2014-03-19 | 2014-03-19 | 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法 |
KR1020150035826A KR20150109272A (ko) | 2014-03-19 | 2015-03-16 | 반도체 밀봉용 기재 부착 밀봉재, 반도체 장치 및 반도체 장치의 제조 방법 |
TW104108637A TWI647797B (zh) | 2014-03-19 | 2015-03-18 | Sealing material with semiconductor sealing substrate, semiconductor device, and method of manufacturing semiconductor device |
CN201510122984.5A CN104934382A (zh) | 2014-03-19 | 2015-03-19 | 附半导体密封用基材的密封材料、半导体装置、及半导体装置的制造方法 |
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JP2014057053A JP2015179769A (ja) | 2014-03-19 | 2014-03-19 | 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法 |
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JP (1) | JP2015179769A (zh) |
KR (1) | KR20150109272A (zh) |
CN (1) | CN104934382A (zh) |
TW (1) | TWI647797B (zh) |
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KR101933277B1 (ko) * | 2016-08-30 | 2018-12-27 | 삼성에스디아이 주식회사 | 필름형 반도체 밀봉 부재, 이를 이용하여 제조된 반도체 패키지 및 그 제조방법 |
CN113603103A (zh) * | 2021-08-13 | 2021-11-05 | 浙江三时纪新材科技有限公司 | 半导体封装材料,基板材料的制备方法,由此得到的半导体封装材料,基板材料及其应用 |
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CN110600437B (zh) * | 2019-08-23 | 2021-03-09 | 广东盈骅新材料科技有限公司 | 一种具有高玻璃化温度封装基材及生产方法 |
CN116031351B (zh) * | 2022-03-25 | 2024-03-08 | 日东电工株式会社 | 光半导体元件密封用片和显示体 |
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TWI695461B (zh) * | 2016-08-30 | 2020-06-01 | 南韓商三星Sdi股份有限公司 | 膜式半導體包封構件、以其製得之半導體封裝與其製備方法 |
CN113603103A (zh) * | 2021-08-13 | 2021-11-05 | 浙江三时纪新材科技有限公司 | 半导体封装材料,基板材料的制备方法,由此得到的半导体封装材料,基板材料及其应用 |
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KR20150109272A (ko) | 2015-10-01 |
CN104934382A (zh) | 2015-09-23 |
TWI647797B (zh) | 2019-01-11 |
TW201608680A (zh) | 2016-03-01 |
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