JP2015179769A - 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法 - Google Patents

半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法 Download PDF

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Publication number
JP2015179769A
JP2015179769A JP2014057053A JP2014057053A JP2015179769A JP 2015179769 A JP2015179769 A JP 2015179769A JP 2014057053 A JP2014057053 A JP 2014057053A JP 2014057053 A JP2014057053 A JP 2014057053A JP 2015179769 A JP2015179769 A JP 2015179769A
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JP
Japan
Prior art keywords
sealing
semiconductor
resin layer
substrate
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2014057053A
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English (en)
Japanese (ja)
Inventor
朋陽 中村
Tomoharu Nakamura
朋陽 中村
秋葉 秀樹
Hideki Akiba
秀樹 秋葉
塩原 利夫
Toshio Shiobara
利夫 塩原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2014057053A priority Critical patent/JP2015179769A/ja
Priority to KR1020150035826A priority patent/KR20150109272A/ko
Priority to TW104108637A priority patent/TWI647797B/zh
Priority to CN201510122984.5A priority patent/CN104934382A/zh
Publication of JP2015179769A publication Critical patent/JP2015179769A/ja
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56Encapsulations, e.g. encapsulation layers, coatings
    • H01L21/561Batch processing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/28Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135Double encapsulation or coating and encapsulation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/544Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2223/00Details relating to semiconductor or other solid state devices covered by the group H01L23/00
    • H01L2223/544Marks applied to semiconductor devices or parts
    • H01L2223/54473Marks applied to semiconductor devices or parts for use after dicing
    • H01L2223/54486Located on package parts, e.g. encapsulation, leads, package substrate

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Laminated Bodies (AREA)
JP2014057053A 2014-03-19 2014-03-19 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法 Pending JP2015179769A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2014057053A JP2015179769A (ja) 2014-03-19 2014-03-19 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法
KR1020150035826A KR20150109272A (ko) 2014-03-19 2015-03-16 반도체 밀봉용 기재 부착 밀봉재, 반도체 장치 및 반도체 장치의 제조 방법
TW104108637A TWI647797B (zh) 2014-03-19 2015-03-18 Sealing material with semiconductor sealing substrate, semiconductor device, and method of manufacturing semiconductor device
CN201510122984.5A CN104934382A (zh) 2014-03-19 2015-03-19 附半导体密封用基材的密封材料、半导体装置、及半导体装置的制造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2014057053A JP2015179769A (ja) 2014-03-19 2014-03-19 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法

Publications (1)

Publication Number Publication Date
JP2015179769A true JP2015179769A (ja) 2015-10-08

Family

ID=54121486

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2014057053A Pending JP2015179769A (ja) 2014-03-19 2014-03-19 半導体封止用基材付封止材、半導体装置、及び半導体装置の製造方法

Country Status (4)

Country Link
JP (1) JP2015179769A (zh)
KR (1) KR20150109272A (zh)
CN (1) CN104934382A (zh)
TW (1) TWI647797B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101933277B1 (ko) * 2016-08-30 2018-12-27 삼성에스디아이 주식회사 필름형 반도체 밀봉 부재, 이를 이용하여 제조된 반도체 패키지 및 그 제조방법
CN113603103A (zh) * 2021-08-13 2021-11-05 浙江三时纪新材科技有限公司 半导体封装材料,基板材料的制备方法,由此得到的半导体封装材料,基板材料及其应用

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110600437B (zh) * 2019-08-23 2021-03-09 广东盈骅新材料科技有限公司 一种具有高玻璃化温度封装基材及生产方法
CN116031351B (zh) * 2022-03-25 2024-03-08 日东电工株式会社 光半导体元件密封用片和显示体

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283453A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 樹脂封止型半導体装置
JPH09232477A (ja) * 1996-02-22 1997-09-05 Nitto Denko Corp 半導体装置およびその製造方法並びにそれに用いる金属−樹脂積層体
JP2004211100A (ja) * 1999-09-17 2004-07-29 Hitachi Chem Co Ltd 封止用エポキシ樹脂組成物及び電子部品装置
JP2005089645A (ja) * 2003-09-18 2005-04-07 Kyocera Chemical Corp 封止用樹脂組成物およびそれを用いた半導体装置
JP2013197327A (ja) * 2012-03-21 2013-09-30 Shin Etsu Chem Co Ltd 繊維含有樹脂基板、封止後半導体素子搭載基板、及び半導体装置の製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2009234506B2 (en) * 2008-04-09 2013-11-21 Agency For Science, Technology And Research Multilayer film for encapsulating oxygen and/or moisture sensitive electronic devices
JP5508115B2 (ja) * 2010-04-26 2014-05-28 日東電工株式会社 樹脂発泡体及び発泡部材
US8823186B2 (en) * 2010-12-27 2014-09-02 Shin-Etsu Chemical Co., Ltd. Fiber-containing resin substrate, sealed substrate having semiconductor device mounted thereon, sealed wafer having semiconductor device formed thereon, a semiconductor apparatus, and method for manufacturing semiconductor apparatus
US8872358B2 (en) * 2012-02-07 2014-10-28 Shin-Etsu Chemical Co., Ltd. Sealant laminated composite, sealed semiconductor devices mounting substrate, sealed semiconductor devices forming wafer, semiconductor apparatus, and method for manufacturing semiconductor apparatus

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05283453A (ja) * 1992-03-31 1993-10-29 Toshiba Corp 樹脂封止型半導体装置
JPH09232477A (ja) * 1996-02-22 1997-09-05 Nitto Denko Corp 半導体装置およびその製造方法並びにそれに用いる金属−樹脂積層体
JP2004211100A (ja) * 1999-09-17 2004-07-29 Hitachi Chem Co Ltd 封止用エポキシ樹脂組成物及び電子部品装置
JP2005089645A (ja) * 2003-09-18 2005-04-07 Kyocera Chemical Corp 封止用樹脂組成物およびそれを用いた半導体装置
JP2013197327A (ja) * 2012-03-21 2013-09-30 Shin Etsu Chem Co Ltd 繊維含有樹脂基板、封止後半導体素子搭載基板、及び半導体装置の製造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101933277B1 (ko) * 2016-08-30 2018-12-27 삼성에스디아이 주식회사 필름형 반도체 밀봉 부재, 이를 이용하여 제조된 반도체 패키지 및 그 제조방법
TWI695461B (zh) * 2016-08-30 2020-06-01 南韓商三星Sdi股份有限公司 膜式半導體包封構件、以其製得之半導體封裝與其製備方法
CN113603103A (zh) * 2021-08-13 2021-11-05 浙江三时纪新材科技有限公司 半导体封装材料,基板材料的制备方法,由此得到的半导体封装材料,基板材料及其应用

Also Published As

Publication number Publication date
KR20150109272A (ko) 2015-10-01
CN104934382A (zh) 2015-09-23
TWI647797B (zh) 2019-01-11
TW201608680A (zh) 2016-03-01

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