JP2015175010A - Vacuum deposition apparatus, vacuum deposition apparatus system and method for manufacturing organic el display device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vacuum deposition apparatus and vacuum deposition apparatus system, capable of suppressing peeling electrification of a glass substrate while maintaining high speed deposition treatment to continuously deposit a film, and a method for manufacturing an organic EL display device.SOLUTION: A vacuum deposition apparatus comprises: an evaporation source 3 for evaporating a vapor deposition material on a glass substrate 11; a mask 41 having a vapor deposition pattern and consisting of a magnetic material; a substrate presser 14 having a magnet for closely contacting the glass substrate 11 with the mask 41, in a vacuum device; and peel rate reduction means 18 having at least one transfer mechanism of a glass substrate transfer mechanism 13, a mask transfer mechanism 43 and substrate presser transfer mechanism 43, for separating the glass substrate 11 and the mask 41, or the glass substrate 11 and the substrate presser 14 in parallel to each other and for reducing a peel rate when at least one of mask peeling between the glass substrate 11 and the mask 41 and substrate presser peeling between the glass substrate 11 and the substrate presser 14 is performed.

Description

  The present invention relates to a vacuum vapor deposition apparatus, a vacuum vapor deposition apparatus system, and a method for manufacturing an organic EL display device, and more particularly to a vacuum vapor deposition apparatus, a vacuum vapor deposition apparatus system, and an organic effective for forming an organic EL display device on a large substrate. The present invention relates to a method for manufacturing an EL display device.

An organic EL element used in an organic EL display device or a lighting device has a structure in which an organic layer made of an organic material is sandwiched between a pair of electrodes, an anode and a cathode, from above and below, and a voltage is applied to the electrodes from the anode side. Holes and electrons are injected into the organic layer from the cathode side and recombined to emit light.
This organic layer has a structure in which a multilayer film including a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer is laminated. As materials for forming the organic layer, there are materials using a high molecular material and a low molecular material. Among these, when using a low molecular material, an organic thin film is formed using a vacuum evaporation system.

The characteristics of the organic EL device are greatly affected by the organic thin film. In the mass production process, the organic thin film is formed by a vacuum integrated process, and the glass substrate on which the organic thin film is formed has become larger year by year. When a glass substrate is formed or transported, contact and peeling with various instruments such as a mask are repeated. At the time of the contact / peeling, the glass substrate is charged and becomes a problem. Various problems such as destruction of devices such as organic thin films, sticking of glass substrates, and dust adhesion have occurred due to electrostatic discharge (ESD) caused by charging. Since each process is in a vacuum, it is difficult to remove generated static electricity with a static eliminator such as an ionizer using corona discharge in the atmosphere. In the mass production process, it is necessary to perform high-speed film formation processing and stably operate continuously for a long time in order to solve these problems caused by charging and reduce costs.
Note that, in vacuum deposition, as a configuration for removing the charge on the substrate and forming a continuous thin film, Patent Document 1 discloses a peeling charge generated during pattern formation by vapor deposition as a magnet, a glass substrate, and a mask. In the meantime, there is disclosed a technique for eliminating static electricity with an apparatus capable of irradiating with ultraviolet rays. Patent Document 2 discloses a manufacturing method in which a separation process of a magnet, a glass substrate, a mask, and the like is a separate process, and static elimination is performed by ultraviolet irradiation in a nitrogen gas atmosphere.

JP 2003-257630 A JP 2009-140903 A

Japanese Patent Application Laid-Open No. H10-228561 discloses a technique for removing static electricity by providing a step of irradiating ultraviolet rays after separating a mask and a magnet from a glass substrate. On the other hand, Patent Document 2 includes a step of transporting and separating a glass substrate to a vacuum chamber different from the vapor deposition step, or a step of eliminating static electricity, and ultraviolet irradiation in a nitrogen atmosphere in the vacuum chamber. A method for static elimination is disclosed. However, none of the patent documents discloses a method for solving the problem by reducing or preventing the charge itself generated in the peeling process.
An object of the present invention is to provide a vacuum vapor deposition apparatus, a vacuum vapor deposition apparatus system, and a method for manufacturing an organic EL display device capable of continuously forming a film while suppressing high-speed film deposition processing while suppressing peeling electrification of a glass substrate. It is to be.

  In order to achieve the above object, the present invention has at least the following configurations.

  The present invention includes an evaporation source for depositing a deposition material on a glass substrate, a mask having a deposition pattern and made of a magnetic material, and a substrate presser having a magnet for bringing the glass substrate and the mask into close contact with each other. A glass substrate moving mechanism for separating the glass substrate and the mask or the glass substrate and the substrate holder in parallel with each other, a mask moving mechanism, and a substrate pressing movement mechanism, and a mask peeling between the glass substrate and the mask, A peeling speed reducing means for reducing the peeling speed when peeling at least one of the substrate pressing and peeling between the glass substrate and the substrate press.

  In the present invention, when the peeling speed reducing means peels, the peeling speed is reduced by reducing the relative speed between at least one of the combination of the glass substrate and the mask and the combination of the glass substrate and the substrate presser. You may have a buffer mechanism.

  Further, according to the present invention, when the peeling speed reducing means peels, the moving mechanism moves the relative speed by moving at least one of the combination of the glass substrate and the mask and the combination of the glass substrate and the substrate holder in the same direction. A drive control mechanism that reduces the peeling speed may be used.

  The present invention may also be provided with an electrometer that measures the peel charge amount of the glass substrate, and controls the spring constant of the buffer mechanism or the speed of the moving mechanism based on the peel charge amount.

  Furthermore, the present invention has a cluster having one or more of the above-described vacuum deposition apparatuses and a transfer chamber in which each of the vacuum deposition apparatuses is provided via a first gate valve, and a glass substrate is provided in the transfer chamber chamber. A charged ultraviolet ray generator for discharging the charges accumulated in the gas and a gas pressure adjusting device for increasing the efficiency of the discharging are provided.

  The present invention also relates to a method for manufacturing an organic EL display device in which a TFT substrate on which a thin film transistor, an organic EL layer, and an electrode layer sandwiching the organic EL layer are formed is sealed with a sealing substrate. An evaporation source in which the formed TFT substrate is disposed in the vacuum evaporation apparatus according to any one of claims 1 to 10 and contains an evaporation material for forming an organic EL layer or an electrode layer facing the TFT substrate. And an evaporation material is deposited on the TFT substrate by an evaporation source to form an organic EL layer.

  According to the present invention, there is provided a vacuum vapor deposition apparatus, a vacuum vapor deposition apparatus system, and an organic EL display device manufacturing method capable of continuous film formation while suppressing high-speed film formation treatment while suppressing peeling electrification of a glass substrate. it can.

It is a schematic diagram which shows the outline of the fundamental structure of embodiment of the vacuum evaporation system used as the object of this invention. It is a figure which shows the state after board | substrate peeling in the vacuum evaporation system of a prior art example. It is a figure which shows the state after board | substrate peeling in the vacuum evaporation system which is a 1st Example of this invention using the buffer mechanism as a peeling speed reduction mechanism. It is a graph which shows the peeling charge dependence of the glass substrate peeling charge amount with and without the buffer mechanism used in this embodiment. It is a figure which shows the state after board | substrate peeling in the vacuum evaporation system which is a 2nd Example of this invention using the buffer mechanism as a peeling speed reduction mechanism. It is a figure which shows the state after board | substrate peeling in the vacuum evaporation system which is a 3rd Example of this invention using the buffer mechanism as a peeling speed reduction mechanism. It is a figure which shows the state after board | substrate peeling in the vacuum evaporation system which is the 4th, 5th Example of this invention which used the moving mechanism as a peeling speed reduction mechanism. It is a schematic diagram which shows the structure of the vacuum evaporation system which is the 6th Example of this invention. It is process drawing which shows one Example of the organic electroluminescent display apparatus production process in this invention.

  In order to prevent static electricity, which is a problem in handling a glass substrate (hereinafter simply referred to as a substrate), the present invention provides a substrate and mask, or a substrate holder, when peeling the substrate and the mask or the substrate holder. The structure using the peeling rate reduction mechanism which reduces the peeling rate of the is used. That is, the present invention provides a peeling speed reduction mechanism to reduce the peeling charge amount by suppressing the peeling speed at the time of peeling without reducing the moving speed of the mask or substrate pressing away from the substrate, or Is preventing. By reducing the peeling charge amount of the substrate, it is possible to realize a vacuum vapor deposition apparatus that can avoid ESD problems such as device destruction due to electrostatic discharge, substrate sticking, and dust adhesion.

The contents of the present invention will be described below in detail with reference to examples and drawings.
However, the present invention is not limited to the embodiments described below, and the present invention is based on the spirit and spirit of the present invention as long as it is a person having ordinary knowledge in the technical field to which the present invention belongs. Of course, inventions that can modify or change the above are included.
In the description of each drawing, the same reference numerals are assigned to the same components, and the description is omitted as much as possible to avoid duplication.

  First, with reference to FIG. 1 and FIG. 2, a basic configuration of a conventional example and an embodiment of a vacuum vapor deposition apparatus that is an object of the present invention will be described. FIG. 1 is a schematic diagram showing an outline of a basic configuration of an embodiment of a vacuum vapor deposition apparatus that is an object of the present invention. FIG. 2 is a view showing a state after the substrate is peeled off in a conventional vacuum vapor deposition apparatus.

  The vacuum deposition apparatus 20 includes a substrate 11 to be deposited, an evaporation source 3 having a deposition material, a mask 41 for pattern deposition, a mask 41 made of a magnetic material, and a magnet in a vacuum deposition chamber 51. There are a mechanism for raising the adhesion between the substrate 11 and the mask 41 by being sandwiched by the provided substrate holder 14, a substrate holding mechanism 12 for holding the substrate 11 in the vapor deposition chamber 51, and a film thickness monitor 7.

  Further, outside the vacuum deposition chamber 51, the film thickness controller 8 for controlling the film thickness formed on the substrate 11 and the signal of the film thickness controller 8 are reflected to control the temperature of the evaporation source 3. There is a vapor deposition control mechanism 9 including an evaporation source power source and a movement control mechanism for the evaporation source. Further, the substrate 11 is moved up and down by the substrate moving mechanism 13. The substrate presser 14 can be brought into contact with and peeled from the substrate 11 by the substrate presser moving mechanism 15 and the mask 41 by the mask moving mechanism 43.

  When the substrate 11 is carried in and out of the vapor deposition chamber 51, the substrate 11 is taken in and out by the robot arm via the substrate carry-in and carry-in gate valve 16. The vacuum in the vapor deposition chamber 51 is exhausted by a pump 61 through a valve 62.

  In a state where the substrate 11, the mask 41, and the substrate presser 14 are in close contact as shown in FIG. 1, pattern vapor deposition is performed by irradiating the substrate 11 with vapor 2 from the evaporation source 3 through the mask opening 42. After the film formation, in the conventional example, with the substrate 11 stopped, the mask 41 and the substrate presser 14 are moved up and down by the respective moving mechanisms, and each is peeled from the substrate 11 to have the configuration shown in FIG.

  The substrate 11 after film formation is unloaded from the deposition chamber 51 through the substrate unloading / loading gate valve 16. After the film formation, when the substrate 11 is peeled off in the configuration shown in FIG. 2, an electric charge 10 is generated due to peeling electrification, and ESD problems such as destruction of the device due to electrostatic discharge, sticking of the substrate, and dust adhesion occur.

  The tact time of the mass production process has been developed to be practically within 60 seconds, and the time allowed for carrying out and carrying in the substrate is very short. Therefore, the moving speed of the substrate 11, the mask 41, and the substrate holder 14 Tens of mm / sec or more is required. Since the peeling charge amount increases as the peeling speed increases, in the conventional example, as the moving speed of the mask 11 and the substrate holder 14 increases, the peeling charge amount increases and the ESD problem becomes significant.

  In addition, since the organic EL manufacturing process performs these vapor deposition processes in a vacuum integrated process, the electric charge 10 generated in the vacuum is brought into the next process without leaking, and the peeling charge amount is repeated. Each time, the ESD problem becomes larger. Therefore, the ESD problem becomes more conspicuous than the increase in the peel charge amount in a single vapor deposition step.

  On the other hand, in the present invention, a peeling speed reduction mechanism for separating the substrate from the mask 41 and the substrate holder 14 in parallel with each other is provided, and without reducing the movement speed of the mask 41 or the substrate holder 14 separated from the substrate 11, Reduces the peeling speed during peeling. As a result, the present invention can reduce the peel charge amount and reduce the ESD problem. In the ESD problem, the peeling rate between the substrate 11 and the mask 41 is more important from the viewpoint of destruction of a device such as an organic thin film.

Next, each example of the present invention in the vacuum deposition apparatus 51 of the present embodiment will be described.
Example 1
FIG. 3 is a view showing a state after the substrate 11 is peeled in the vacuum vapor deposition apparatus 21 having the first embodiment of the present invention using the buffer mechanism as the peeling speed reduction mechanism. FIG. 4 is a graph showing the peeling rate dependence of the peeling charge amount of the glass substrate with and without the buffer mechanism used in this example. Hereinafter, the first embodiment will be described with reference to FIG. 3, and the principle of reducing the peeling charge amount and the effect thereof will be described with reference to FIGS. 3 and 4.

  In the first embodiment, by providing the substrate holding buffer mechanism 18 between the substrate holding mechanism 12 and the substrate moving mechanism 13, the relative speed at the time of peeling the substrate 11 and the mask 41, that is, the peeling speed can be reduced. This is an example in which the charge amount can be reduced.

  For example, in the conventional example, when the moving speed of the mask 41 is 100 mm / second, peeling charging corresponding to the moving speed, that is, the peeling speed is generated. On the other hand, in Example 1, during deposition, the substrate 11 is pressed against the mask 41 with a predetermined force, and after the deposition, when the mask 41 starts moving at 100 mm / second, the substrate 11 is moved in the same movement direction of the mask 41 at a speed of 50 mm / second. The substrate holding buffer mechanism 18 is moved at a jumping speed and then stopped. Although the moving speed of the mask 41 is not changed to 100 mm / second by the substrate holding buffer mechanism 18, when the mask 41 is peeled off from the substrate 11, the relative relationship between the substrate 11 and the mask 41, and the substrate 11 and the substrate pressing member 14. The speed, that is, the peeling speed is 50 mm / second. As a result, the peel charge amount on both surfaces of the substrate 11 could be greatly reduced. After the separation, the substrate 11 or the substrate presser 14 is moved by the substrate moving mechanism 13 or the substrate presser moving mechanism 15 in order to create a space for taking in and out the substrate 11 from the substrate carry-in / carry-in gate valve 16 by the robot arm.

  The substrate holding and buffering mechanism 18 of the first embodiment is specifically configured by a mechanical spring, but can be implemented by a gas pressure type, a hydraulic type, or a friction type spring.

FIG. 4 shows the dependence of the substrate peeling charge amount on the peeling speed, where the horizontal axis represents the moving speed of the mask [mm / sec] and the vertical axis represents the peel charge amount [V]. In the absence of a buffer mechanism such as the substrate holding buffer mechanism 18, as shown by the solid line (theoretical value) in FIG. 4, the peel charge amount increases as the peel speed increases. In particular, it rapidly increases when the moving speed of the mask is 10 mm / second or more.
On the other hand, by providing a buffer mechanism, as shown by the one-dot chain line (experimental value) in FIG. 4, the peel charge amount is within an allowable voltage that can prevent device breakdown due to general electrostatic discharge within the actual process use range. It can be suppressed to 50V or less. When the moving speed of the mask 41 is 100 mm / sec, the peeling charge amount is 100 V or more when there is no buffer mechanism, but when the buffer mechanism is provided, the peeling charge amount is 40 V without changing the moving speed of the mask 41. I was able to keep it below.

According to the first embodiment, by providing the substrate holding buffer mechanism 18 between the substrate holding mechanism 12 and the substrate moving mechanism 13, it is possible to suppress the peeling rate of the glass substrate without reducing the moving speed of the mask 41, That is, the substrate can be processed at high speed without increasing the tact time, and the generation of the peeling charge amount can be reduced.
Further, according to the first embodiment, by providing the substrate holding buffer mechanism 18 between the substrate holding mechanism 12 and the substrate moving mechanism 13, it is possible to suppress the peeling rate of the glass substrate without complicated control. Substrate processing can be performed at high speed without increasing the tact time, and the generation of peeling charge can be reduced.

  As a result, it is possible to reduce device failure due to electrostatic discharge, sticking of a mask or substrate holder to a glass substrate, and device failure due to dust adhesion.

  In the first embodiment described above, an embodiment of a vacuum deposition apparatus that performs so-called horizontal deposition for depositing the substrate 11 in a horizontal state has been described. However, FIG. Since there is basically no change, the present invention can also be applied to a so-called vertical deposition apparatus for depositing the substrate 11 and the mask 41 in a vertical state.

(Example 2)
FIG. 5 is a view showing a state after peeling of the substrate 11 in the vacuum vapor deposition apparatus 22 having the second embodiment of the present invention using a buffer mechanism as a peeling speed reduction mechanism.
In the first embodiment, the buffer mechanism 18 uses a mechanical spring. However, when the moving speed of the mask 41 is varied, the peel charge amount changes. Therefore, the peeling charge amount of the substrate 11 is measured by an electrometer 111 installed in the vapor deposition chamber 51 and learned so that the peeling charge amount is minimized, and the buffer control mechanism 112 has a spring constant of the substrate holding buffer mechanism 18. That is, the moving speed to the mask 41, that is, the peeling speed from the substrate 11, the mask 41 and the substrate holder 14 is controlled. The result of this learning is applied from the substrate 11 to be deposited next.

  In this embodiment, a vibration capacitance type surface electrometer is used as the electrometer 111, but the same effect can be obtained with a sector type or a current collection type. Since the substrate holding buffer mechanism 18 is electrically controlled by the buffer control mechanism 112, it is possible to control the gas pressure and hydraulic springs more accurately than the mechanical springs.

In this embodiment, the peeling charge amount is monitored by the electrometer 111 and controlled to be the minimum peeling charge amount. However, the buffer control mechanism 112 holds the substrate based only on the moving speed of the mask 41 and the substrate holder 14. It was also possible to control the spring constant of the buffer mechanism 18.
For example, in the first embodiment, the moving speed of the mask 41 is set to 100 mm / second. However, if the moving speed of the mask 41 is set to 80 mm and the peeling speed with respect to the mask 41 and the substrate presser 14 is made uniform, the substrate holding buffer mechanism 18 The spring constant is controlled so that the jumping speed is 40 mm / sec. In this case, the amount of peeling charge can be reduced by measuring in advance the optimum spring constant for the moving speed of the mask 41 and controlling based on the measurement data.

  According to the second embodiment, control by the buffer control mechanism 112 is necessary. However, even if the moving speed of the mask 41 changes, the amount of peeling charge generated on the substrate 11 can be reduced, and the destruction of the device due to electrostatic discharge, It is possible to achieve an effect of reducing device defects due to sticking of a mask or a substrate press to a glass substrate and adhesion of dust.

  In the first and second embodiments, the mask 41 is moved to stop the substrate holder 14, but the substrate holder 14 may be moved to stop the mask 41.

(Example 3)
FIG. 6 is a diagram showing a state after the substrate 11 is peeled in the vacuum vapor deposition apparatus 23 having the third embodiment of the present invention using a buffer mechanism as the peeling speed reduction mechanism.
In Example 1 and Example 2, the substrate holding buffer mechanism 18 was provided on the substrate moving mechanism 13 side, the mask 41 was moved in a state where the substrate presser 14 was stopped, and the mask 41 and the substrate presser 14 were peeled off simultaneously. However, in this case, when the mask 41 and the substrate presser 14 are moved simultaneously, the substrate holding buffer mechanism 18 cannot be utilized.

  Therefore, in the third embodiment, the mask holding buffer mechanism 19 and the substrate pressing buffer mechanism 110 are provided on the mask moving mechanism 43 and the substrate pressing moving mechanism 15 side, and the mask 41 and the substrate pressing 14 are held in a state where the substrate 11 is stopped. The mask moving mechanism 43 and the substrate pressing movement mechanism 15 are moved away from the substrate 11 on the moving side of 100 mm / second, for example, and the mask 41 and the substrate pressing 14 can be peeled off simultaneously.

  The operation directions of the mask holding buffer mechanism 19 and the substrate holding buffer mechanism 110 are different from those of the substrate holding buffer mechanism 18. The substrate holding buffer mechanism 18 presses the substrate 11 against the mask 41 during vapor deposition, and when separating after vapor deposition, the substrate 11 is moved in the same direction as the movement of the mask 41 to reduce the relative speed with the mask 41, The peel rate was reduced.

  On the other hand, the mask holding buffer mechanism 19 and the substrate pressing buffer mechanism 110 suppress the movement speed of the mask 41 and the substrate presser 14 when pressing the mask 41 and the substrate presser 14 against the substrate 11 during vapor deposition and peeling after vapor deposition. As described above, the peeling speed is reduced by operating in a direction opposite to each moving direction and reducing each relative speed to be, for example, 50 mm / sec. After peeling, the mask 41 and the substrate holder 14 move at a movement speed of 100 mm / second of the mask moving mechanism 43 and the substrate pressing movement mechanism, respectively.

After the peeling, as in the first embodiment, the substrate 11 or the substrate presser 14 is moved to the substrate moving mechanism 13 or the substrate presser in order to make a space for taking in and out the substrate 11 from the substrate carry-in / take-in gate valve 16 by the robot arm. It is moved by the moving mechanism 15. However, in the third embodiment, since the substrate holder 14 has already moved, the processing time can be shortened to make a space.
Accordingly, also in the third embodiment, as in the first and second embodiments, the peeling speed can be reduced without changing the moving speed of the mask 41 and the substrate presser 14, and effects such as a reduction in tact time can be achieved. Further, as in Example 1, the peeling speed can be reduced without complicated control.

  In the third embodiment, the electrometer 111 and the buffer control mechanism 112 used in the second embodiment are not shown, but the peeling charge amount of the substrate is monitored, and the spring constant of the buffer mechanism is determined by the peeling charge amount. By adjusting, the peel charge amount could be further reduced.

Example 4
FIG. 7 is a view showing a state after peeling of the substrate 11 in a vacuum vapor deposition apparatus that can implement the fourth and fifth embodiments of the present invention using a moving mechanism as the peeling speed reduction mechanism. In the first to third embodiments, a buffering mechanism is provided to reduce the peeling speed between the substrate 11 and the mask 41 / substrate holding member 14 and reduce the peeling charge amount. This is an example in which the peeling rate is reduced using a mechanism.

  The fourth embodiment is an example in which the substrate moving mechanism 13 has the role of the substrate holding buffer mechanism 18 in the first embodiment. That is, in order to peel off the substrate 11 after vapor deposition, for example, when the substrate holder 14 is stopped, and then the mask 41 starts to move at 100 mm / second, the substrate moving mechanism 13 is controlled by the drive control mechanism 113, and the substrate 11. Is moved in the same movement direction of the mask 41 at a speed of 50 mm / second, and then stopped. In this case, it is necessary to start the movement of the substrate 11 so that the mask 41 does not move in advance.

  After the peeling, as in the first embodiment, a process for creating a space for taking in and out the substrate 11 by the robot arm from the substrate carry-in / carry-in gate valve 16 is performed. In the process, the substrate may be continuously moved without stopping the substrate 11.

According to the fourth embodiment, unlike the first embodiment, the substrate moving mechanism 13 needs to be controlled. However, as in the first embodiment, the movement speed of the mask 41 is not decreased, that is, the tact time is increased. Therefore, the substrate can be processed at high speed without generating a peeling charge amount. As a result, the effect that it brings can also be produced.
Moreover, the peeling speed of the board | substrate 11 can be reduced and the effect which it brings about can also be show | played.

  By applying the method of the fourth embodiment to the first embodiment to the third embodiment, the same effect as the fourth embodiment can be obtained.

(Example 5)
In the fifth embodiment, unlike the fourth embodiment, the mask 41 and the substrate holder 14 are peeled off from the substrate 11 separately, and in each peeling, the movement directions of the three moving mechanisms are aligned in the same direction to control the peeling speed. This is an example in which

As an example, consider the case where the substrate holder 14 is peeled first. First, the substrate holder 14 was started to move upward at a speed of, for example, 100 mm / second, and at the same time, the substrate 11 and the mask 41 were moved upward at the same speed of 50 mm / second. Thereafter, when the substrate 11 and the mask 41 were peeled off, the movement of the mask 41 was started downward at a speed of 100 mm / second, and simultaneously the substrate 11 was simultaneously moved downward at a speed of 50 mm / second.
The above is peeled in the order of the substrate holder 14 and the mask 41, but the reverse may be possible.
Also in the fifth embodiment, the peeling speed of the substrate 11 can be reduced without reducing the moving speed of the mask 41, that is, the substrate can be processed at high speed without increasing the tact time, and the generation of the peeling charge amount can be reduced. As a result, the effect that it brings can also be produced.
In the fourth and fifth embodiments, the electrometer 111 used in the second embodiment is not shown, but the peeling charge amount of the substrate is monitored, and the parameters of the drive control mechanism are adjusted by the peeling charge amount. Further, the peel charge amount could be further reduced.

  In the third embodiment and the fifth embodiment described above, the mask 41 and the substrate holder 14 can be peeled separately, so that the substrate 11 from the substrate holder is not located in the same place as in the third and fifth embodiments but in different places. Can be peeled off. For example, in the above-described vertical deposition apparatus, the substrate 11 may be transported and placed on the substrate holder 14 of the vacuum deposition apparatus. In this case, the mask 41 and the substrate 11 may be peeled off in a vertical state, and the substrate 11 and the substrate retainer may be peeled off in a horizontal state.

(Example 6)
FIG. 8 is a schematic diagram showing a configuration of a vacuum evaporation system 25 that is a sixth embodiment of the present invention. FIG. 8 shows a vacuum vapor deposition apparatus system in which a cluster composed of a transfer chamber 111 and two vapor deposition chambers on the left and right sides has a multi-stage configuration via a gate valve 112. In Examples 1 to 5, a configuration example in which one type of thin film is formed by a vacuum vapor deposition apparatus is shown. However, in an organic EL production line, a multilayer film is formed by a vacuum integrated line in order to create a laminated structure by vapor deposition. There is a need. In that case, for example, even if any one of the methods from Examples 1 to 5 is used and the peeling charge amount is not problematic in the first stage of the vacuum evaporation apparatus, the peel charge amount of each stage is accumulated on the substrate 11 in the integrated vacuum line. Therefore, an ESD problem may occur in a subsequent process apparatus. In the sixth embodiment, a configuration example will be described in which static electricity is eliminated in a transfer chamber for carrying a substrate between vacuum deposition chambers, and an ESD problem is prevented even in a multi-stage apparatus configuration.

  In FIG. 8, a transfer chamber 115 is installed between the vapor deposition chamber A52 and the vapor deposition chamber F57, the vapor deposition chambers 52 to 57 and the transfer chamber 115 are connected via the substrate loading / unloading gate valve 16, and the transfer chambers are connected to each other. This is an example in which a multi-stage deposition system is constructed by connecting with a transfer chamber gate valve 114. In the vapor deposition chamber, the static electricity removal by the ultraviolet ray generator 121 used in the vacuum introduces vacuum ultraviolet rays and gas for increasing the static elimination efficiency, so that degradation of the device becomes a problem. In the sixth embodiment, an ultraviolet ray generator 121 and a gas pressure adjusting device 131 for increasing the charge removal efficiency are disposed in a transfer chamber 115 provided between the vapor deposition chambers, and peeling charging is performed by a multi-stage vapor deposition process. Before the amount increases, the charge in each transfer chamber 115 is neutralized to reduce the amount of peeled charge accumulated in the integrated vacuum line at each stage and maintain a charging voltage that does not cause an ESD problem. We were able to build a mass production process that can be operated stably and continuously.

  Further, in the sixth embodiment, the electrometer 111 used in the second embodiment is not illustrated, but it is installed in each transfer chamber to monitor the peeling charge amount of the substrate, and the ultraviolet ray generator 121 is determined by the peeling charge amount. Further, by adjusting the gas pressure adjusting device 131, the peel charge amount can be further reduced.

  According to the sixth embodiment, it is possible to provide a vacuum vapor deposition apparatus system capable of continuously forming films while suppressing high-speed film formation processing while suppressing peeling charging of the glass substrate.

(Example 7)
FIG. 9 is a process diagram showing an example of an organic EL display device production process. In Examples 1 to 6, only the organic vapor deposition process of this production process was mainly described.
In the process diagram of FIG. 9, a TFT substrate on which an organic layer and a thin film transistor (TFT) for controlling a current flowing in the organic layer are formed, and a sealing substrate for protecting the organic layer from external moisture are separately formed and sealed. Combined in the sealing process of the process / seal curing process.

In the TFT substrate manufacturing process of FIG. 9, dry cleaning is performed on the wet-cleaned substrate. Dry cleaning may include cleaning by ultraviolet irradiation.
First, a TFT is formed on the dry-cleaned TFT substrate. A passivation film and a planarizing film are formed on the TFT, and a lower electrode of the organic EL layer is formed thereon. The lower electrode is connected to the drain electrode of the TFT. When the lower electrode is an anode, for example, an ITO (Indium Tin Oxide) film is used.

Next, an organic EL layer is formed on the lower electrode. The organic EL layer is composed of a plurality of layers. When the lower electrode is an anode, from the bottom, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. Such an organic EL layer is formed by vapor deposition, and an upper electrode layer is formed thereon. The upper electrode layer is formed by a method for manufacturing a vacuum vapor deposition apparatus or an organic EL display apparatus as described in the first to sixth embodiments.
On the organic EL layer, an upper electrode is formed of a solid film in common for each pixel. When the organic EL display device is top emission, a transparent electrode such as IZO (registered trademark, In ₂ O ₃ ZnO) is used as the upper electrode. When the organic EL display device is bottom emission, a metal film such as aluminum is used. Is used.
In the sealing substrate loading step of FIG. 9, a desiccant (desiccant) is disposed on the sealing substrate that has been subjected to wet cleaning and dry cleaning. Since the organic EL layer deteriorates when there is moisture, a desiccant is used to remove the moisture inside. Although various materials can be used for the desiccant, the desiccant arrangement method differs depending on whether the organic EL display device is a top emission or a bottom emission.

Thus, the TFT substrate and the sealing substrate manufactured separately are combined in the sealing step. A sealing material for sealing the TFT substrate and the sealing substrate is formed on the sealing substrate. After combining the sealing substrate and the TFT substrate, the sealing portion is irradiated with ultraviolet rays to cure the sealing portion and complete the sealing.
A lighting test is performed on the organic EL display device thus formed. In the lighting inspection, even if defects such as black spots and white spots have occurred, those that can be corrected can be corrected to complete the organic EL display device.

  According to the present invention, an organic EL layer formed of a plurality of layers can be formed in a short tact time while suppressing contamination by foreign matters, thereby reducing the manufacturing cost of the organic EL display device and improving the yield. Can do. Furthermore, since the components of each layer of the organic EL layer can be accurately controlled, an organic EL display device having high reproducibility of characteristics and high reliability can be manufactured.

2: Vapor 3: Evaporation source 7: Film thickness monitor 8: Film thickness controller 9: Evaporation source control mechanism 10: Charge 11: Substrate 12: Substrate holding mechanism 13: Substrate moving mechanism 14: Substrate holder (including magnet) 15 : Substrate holding and moving mechanism 16: Gate valve for loading and unloading the substrate 17: Direction of loading and unloading the substrate 18: Substrate holding buffer mechanism 19: Mask holding buffer mechanism 20 to 25: Vacuum deposition apparatus 41: Mask 42 Mask opening 43: Mask moving mechanism 51: Deposition chamber 52: Deposition chamber A 53: Deposition chamber B
54: Deposition chamber C 55: Deposition chamber D 56: Deposition chamber E
57: Deposition chamber F 61: Pump 62: Valve 110: Substrate holding buffer mechanism 111: Electrometer 112: Buffer control mechanism 113: Drive control mechanism 114: Transfer chamber gate valve 115: Transfer chamber 121: Ultraviolet generator 131: Gas Pressure regulator,

Claims (15)

An evaporation source for depositing a deposition material on a glass substrate, a mask made of a magnetic material having a deposition pattern, and a substrate press having a magnet for closely attaching the glass substrate and the mask, are included in the vacuum device,
A glass substrate moving mechanism that separates the glass substrate and the mask or the glass substrate and the substrate holder in parallel with each other, a mask moving mechanism, and a substrate holding mechanism; provided with at least one moving mechanism;
A peeling speed reducing means for reducing the peeling speed when peeling off at least one of the mask peeling between the glass substrate and the mask and the substrate pressing peeling between the glass substrate and the substrate press;
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system according to claim 1,
The peeling speed reducing means reduces the peeling speed by reducing a relative speed between at least one of the combination of the glass substrate and the mask and the combination of the glass substrate and the substrate pressing when the peeling is performed. Having a buffering mechanism,
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system according to claim 2,
The buffer mechanism is connected to a substrate holding mechanism that holds the glass substrate in a state in which the substrate pressing is stopped when the peeling is performed, or in a state where the glass substrate and the substrate pressing are integrated. A substrate holding buffer mechanism for moving the glass substrate at a first movement speed in the same direction as the movement direction of the mask;
The mask moving mechanism moves the mask at a speed faster than the first moving speed;
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system according to claim 2,
The buffer mechanism is connected to a substrate holding mechanism that holds the glass substrate in a state where the substrate mask is stopped when the peeling is performed, and the second glass substrate is moved in the same direction as the moving direction of the substrate presser. A substrate holding buffer mechanism that moves at a moving speed of
The mask moving mechanism moves the substrate press faster than the second moving speed;
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system according to claim 2,
The buffer mechanism is provided in the mask moving mechanism in a state where the glass substrate is stopped when the peeling is performed, and the mask moves the mask at a third speed in a direction opposite to the moving direction of the mask. A holding buffer mechanism, and a substrate pressing holding buffer mechanism that is provided in the substrate pressing moving mechanism and moves the substrate pressing at a fourth speed in a direction opposite to a moving direction of the substrate pressing;
The mask moving mechanism moves the mask at a moving speed faster than the third speed, and the substrate pressing moving mechanism moves the substrate pressing at a moving speed faster than the fourth speed;
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system in any one of Claims 2 thru | or 5,
An electrometer that measures the amount of charge peeled from the glass substrate;
A buffer control mechanism for controlling a spring constant of the buffer mechanism based on the peel charge amount;
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system according to claim 1,
The peeling speed reduction means moves the at least one of the combination of the glass substrate and the mask and the combination of the glass substrate and the substrate pressing member in the same direction by the moving mechanism when the peeling is performed. A drive control mechanism that reduces the peeling speed by reducing the speed,
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system of Claim 7,
In the state where the substrate pressing is stopped or when the glass substrate and the substrate pressing are integrated when the driving control mechanism is peeled off, the mask moving mechanism and the substrate moving mechanism It is a mechanism for moving the glass substrate at a slower moving speed than the mask,
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system of Claim 7,
The drive control mechanism is arranged in the same direction so as to reduce the relative speed between the glass substrate and the mask by the substrate movement mechanism and the substrate pressing movement mechanism in a state where the mask is stopped at the time of peeling. It is a mechanism to move,
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system of Claim 7,
The drive control mechanism starts the movement of one of the mask and the substrate holder at a fifth movement speed by the mask movement mechanism, the substrate movement mechanism, and the substrate holding movement mechanism when the peeling is performed, And the other is moved in the same direction as the one at a sixth movement speed slower than the fifth movement speed, and then the other is started to move at the seventh speed, and the glass substrate is moved from the seventh movement speed. It is a mechanism that moves in the same direction as the other at a slow eighth movement speed,
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation system according to any one of claims 7 to 10,
An electrometer that measures the amount of charge peeled from the glass substrate;
The drive control mechanism controls the speed of the moving mechanism based on the peel charge amount.
A vacuum evaporation apparatus characterized by that. In the vacuum evaporation apparatus of Claim 5 or Claim 10,
The separation of the glass substrate and the mask and the separation of the glass substrate and the substrate holder are performed at different locations.
A vacuum evaporation apparatus characterized by that. One or more vacuum deposition apparatuses according to claims 1 to 12, and each of the vacuum deposition apparatuses includes a cluster having a transfer chamber provided via a first gate valve,
A charged ultraviolet ray generator that neutralizes charges accumulated in the glass substrate in the transfer chamber, a gas pressure regulator that increases the efficiency of the static elimination, and
A vacuum deposition apparatus system characterized by comprising: In the vacuum evaporation system of Claim 13,
The clusters are provided in multiple stages, and the transfer chambers are connected by a second gate valve.
A vacuum evaporation system characterized by that. A method of manufacturing an organic EL display device in which a TFT substrate on which a thin film transistor, an organic EL layer, and an electrode layer sandwiching the organic EL layer are formed is sealed with a sealing substrate,
The TFT substrate on which the thin film transistor is formed is disposed in the vacuum evaporation apparatus according to any one of claims 1 to 10, and the organic EL layer or the electrode layer is formed to face the TFT substrate. An evaporation source containing an evaporation material for performing, and depositing the evaporation material on the TFT substrate by the evaporation source to form the organic EL layer,
An organic EL display device manufacturing method characterized by the above.

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