JP2015144496A - Dc power supply and air conditioner using the same - Google Patents
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本発明は、交流電力を直流電力に変換する直流電源装置及びこれを用いた空気調和機に関する。 The present invention relates to a DC power supply device that converts AC power into DC power and an air conditioner using the same.
負荷としてモータを搭載した電車や自動車並びに空気調和機等の機器には、交流電力を直流電力に変換する直流電源装置が搭載されている。そして、電力送電設備の負担軽減のため、直流電源装置には高効率、力率改善による低高調波電流が求められている。 Devices such as trains, automobiles, and air conditioners equipped with a motor as a load are equipped with a DC power supply device that converts AC power into DC power. In order to reduce the burden on power transmission facilities, DC power supply devices are required to have high efficiency and low harmonic current due to power factor improvement.
低高調波電流実現の方法として、リアクタを接続しスイッチング素子のスイッチング動作によって回路を複数回短絡することで、入力電流波形を入力電圧波形のように正弦波状に成形して力率を改善する方法が提案されている。 A method to improve the power factor by shaping the input current waveform into a sine wave like the input voltage waveform by connecting the reactor and short-circuiting the circuit multiple times by switching operation of the switching element as a method of realizing the low harmonic current Has been proposed.
この直流電源装置内の回路には、通常ダイオードやＩＧＢＴ（Ｉｎｓｕｌａｔｅｄ−Ｇａｔｅ− Ｂｉｐｏｌａｒ−Ｔｒａｎｓｉｓｔｏｒ）やＭＯＳＦＥＴ（Ｍｅｔａｌ−Ｏｘｉｄｅ−Ｓｅｍｉｃｏｎｄｕｃｔｏｒ Ｆｉｅｌｄ−Ｅｆｆｅｃｔ Ｔｒａｎｓｉｓｔｏｒ）といった半導体素子が使用されている。このダイオードによって交流電圧を全波整流乃至半波整流を行い、平滑コンデンサにて平滑する。また、ＩＧＢＴやＭＯＳＦＥＴをスイッチングさせることで力率改善制御を行う。 In the circuit in the DC power supply device, a semiconductor element such as a diode, an IGBT (Insulated-Gate-Bipolar-Transistor), or a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is usually used. The diode performs full-wave rectification or half-wave rectification on the AC voltage and smoothes it with a smoothing capacitor. Moreover, power factor improvement control is performed by switching IGBT and MOSFET.
しかし、直流電源装置への入力が増える事で半導体が発熱し、熱破壊が発生するおそれがある。また、半導体素子の周囲温度が高い条件下においては、当然のことながらそれだけ発熱しやすくなる。 However, if the input to the DC power supply increases, the semiconductor generates heat and there is a risk of thermal destruction. In addition, under conditions where the ambient temperature of the semiconductor element is high, it naturally becomes easier to generate heat.
このような問題を解決するために、例えば特許文献１のような技術が提案されている。
特許文献１に記載のインバータ装置は、モータの回転を制御するスイッチング回路と、パルス幅変調された矩形波を用いてスイッチング回路をドライブするドライブ回路と、温度変化に伴うサーミスタの緩やかな抵抗値の変化を捉えて温度検出信号として出力する温度検出回路と、モータ電流が所定値を超えた場合に異常信号を出力する過電流検出回路とを備え、温度検出信号が変化した場合は、その変化に応じてドライブ回路の出力を変化させ、異常信号が変化した場合は、直ちにドライブ回路の出力を停止する。
In order to solve such a problem, for example, a technique such as Patent Document 1 has been proposed.
The inverter device described in Patent Document 1 includes a switching circuit that controls the rotation of a motor, a drive circuit that drives the switching circuit using a pulse-width-modulated rectangular wave, and a moderate resistance value of the thermistor that accompanies a temperature change. A temperature detection circuit that captures the change and outputs it as a temperature detection signal, and an overcurrent detection circuit that outputs an abnormal signal when the motor current exceeds a predetermined value. Accordingly, the output of the drive circuit is changed, and when the abnormal signal changes, the output of the drive circuit is immediately stopped.
しかし、特許文献１のインバータ装置はスイッチング素子保護のため、スイッチング素子の動作を停止させるのでインバータ装置の動作が停止してしまい、実際の製品動作上好ましくない。 However, since the inverter device of Patent Document 1 stops the operation of the switching element to protect the switching element, the operation of the inverter device stops, which is not preferable in actual product operation.
直流電源装置に置き換えて考えてみても、直流電源装置がアクティブ状態（力率改善動作中）において、スイッチング動作中の素子を過電流停止させた場合、素子の保護を行うことは可能であるが、力率改善制御、最悪の場合直流電源装置の動作自体を止めることになり、製品動作上好ましくない。 Considering the replacement with a DC power supply device, it is possible to protect the element when the DC power supply device is in an active state (during power factor correction operation) and the element during switching operation is overcurrent stopped. In the worst case, the operation of the DC power supply device is stopped, which is not preferable in terms of product operation.
本発明はこのような事情に鑑みてなされたものであり、スイッチング素子の熱破壊を防止しつつ、直流電源装置の動作を止めることを防ぐ直流電源装置を提供することを目的とする。 The present invention has been made in view of such circumstances, and an object of the present invention is to provide a DC power supply device that prevents the operation of the DC power supply device from being stopped while preventing thermal destruction of the switching element.
上記課題を解決するために、本発明の直流電源装置は、交流電力を直流電力に変換する直流電源装置において、ＭＯＳＦＥＴを有する直流電源回路と、ＭＯＳＦＥＴの温度を検出する温度検出部と、直流電源回路に流れる電流を検出する電流検出部とを備え、電流検出部で検出された電流が所定値を超えた場合にＭＯＳＦＥＴのスイッチング制御を停止し、温度検出部で検出した温度が低いほど前記所定値は高くなる。 In order to solve the above-described problems, a DC power supply device according to the present invention is a DC power supply device that converts AC power into DC power, a DC power supply circuit having a MOSFET, a temperature detection unit that detects the temperature of the MOSFET, and a DC power supply. A current detection unit that detects a current flowing through the circuit, and stops switching control of the MOSFET when the current detected by the current detection unit exceeds a predetermined value. The lower the temperature detected by the temperature detection unit, the lower the predetermined value. The value gets higher.
本発明によれば、スイッチング素子の熱破壊を防止しつつ、直流電源装置の動作を止めることを防ぐ直流電源装置を提供することができる。 ADVANTAGE OF THE INVENTION According to this invention, the DC power supply device which prevents stopping the operation | movement of a DC power supply device can be provided, preventing the thermal destruction of a switching element.
以下、本発明の実施例について図面を参照して詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
図１は空気調和機のサイクル構成図である。冷房運転時は、圧縮機３４より吐出された高温且つ高圧の冷媒は、四方弁３５を介して室外熱交換機３７に流入する。室外熱交換機３７に流入した冷媒は、室外送風ファン３８によって送られる室外の空気と熱交換することで、凝縮されて液冷媒となる。液冷媒は、膨張弁３６を通過することで低温低圧の二相冷媒になり、室内熱交換器３９に流入する。室内熱交換器３９に流入した低温低圧の二相冷媒は、室内送風ファン４０によって送られる室内の空気と熱交換する。このとき、室内熱交換器３９に送られた室内の空気は、室内熱交換器３９に流入した低温低圧の二相冷媒によって冷却され、吹出口から室内に吐出される。吹出口から室内に吐出される空気は、吸込口における空気の温度よりも低いため、室内の温度を下げることができる。室内熱交換器３９で熱交換された冷媒は四方弁３５を介して再び圧縮機３４に戻る。圧縮機３４と室外熱交換器３７と室外送風ファン３８と膨張弁３６は室外機に配置され、室内熱交換器３９と室内送風ファン４０は室内機に配置されている。本実施例に係る直流電源装置は、圧縮機３４に接続されている。具体的には、本実施例に係る直流電源装置は、インバータを介して圧縮機３４に接続されている。 FIG. 1 is a cycle configuration diagram of an air conditioner. During the cooling operation, the high-temperature and high-pressure refrigerant discharged from the compressor 34 flows into the outdoor heat exchanger 37 via the four-way valve 35. The refrigerant flowing into the outdoor heat exchanger 37 is condensed and becomes liquid refrigerant by exchanging heat with the outdoor air sent by the outdoor fan 38. The liquid refrigerant passes through the expansion valve 36 to become a low-temperature and low-pressure two-phase refrigerant and flows into the indoor heat exchanger 39. The low-temperature and low-pressure two-phase refrigerant that has flowed into the indoor heat exchanger 39 exchanges heat with indoor air sent by the indoor fan 40. At this time, the indoor air sent to the indoor heat exchanger 39 is cooled by the low-temperature and low-pressure two-phase refrigerant flowing into the indoor heat exchanger 39 and is discharged into the room from the outlet. Since the air discharged into the room from the outlet is lower than the temperature of the air at the inlet, the room temperature can be lowered. The refrigerant heat-exchanged by the indoor heat exchanger 39 returns to the compressor 34 again via the four-way valve 35. The compressor 34, the outdoor heat exchanger 37, the outdoor blowing fan 38, and the expansion valve 36 are disposed in the outdoor unit, and the indoor heat exchanger 39 and the indoor blowing fan 40 are disposed in the indoor unit. The DC power supply device according to this embodiment is connected to the compressor 34. Specifically, the DC power supply device according to the present embodiment is connected to the compressor 34 via an inverter.
図２は、直流電源装置の構成図を示す図である。図２に示すように、本実施例に係る直流電源装置は、リアクトルＬ１と、ダイオードＤ１〜Ｄ４と、ＭＯＳＦＥＴ‐Ｑ１、Ｑ３と、ＩＧＢＴ‐Ｑ２、Ｑ４と、リレーＲＥＬ１、ＲＥＬ２と平滑コンデンサＣ１と、電流検出部１０１と、入力電流判定部１０２と、素子温度検出部１０３と、素子温度判定部１０４と、ゼロクロス検出部１０５と、ゼロクロス判定部１０６と、コンバータ制御部１０７と、と備えている。そして、直流電源装置の入力段は交流電源Ｖ１に接続されており、出力段は負荷１０８に接続されている。負荷１０８としては例えばモータやインバータ回路などがある。 FIG. 2 is a diagram illustrating a configuration diagram of the DC power supply device. As shown in FIG. 2, the DC power supply according to this embodiment includes a reactor L1, diodes D1 to D4, MOSFETs Q1 and Q3, IGBTs Q2 and Q4, relays REL1 and REL2, and a smoothing capacitor C1. , Current detection unit 101, input current determination unit 102, element temperature detection unit 103, element temperature determination unit 104, zero cross detection unit 105, zero cross determination unit 106, and converter control unit 107. . The input stage of the DC power supply device is connected to the AC power supply V1, and the output stage is connected to the load 108. Examples of the load 108 include a motor and an inverter circuit.
リアクタＬ１にはダイオードＤ１〜Ｄ４の４素子から成るダイオードブリッジ回路が接続されており、その出力段には平滑コンデンサＣ１が接続されている。そして、平滑コンデンサのマイナス側にアノードが接続されているダイオードＤ３には、ＲＥＬ１とＭＯＳＦＥＴ‐Ｑ１がシリーズに接続された直列回路とＩＧＢＴ‐Ｑ２が並列に接続されている。同様に、平滑コンデンサのマイナス側にアノードが接続されているダイオードＤ４には、ＲＥＬ２とＭＯＳＦＥＴ‐Ｑ３がシリーズに接続された直列回路とＩＧＢＴ‐Ｑ４が並列に接続されている。 A diode bridge circuit composed of four elements D1 to D4 is connected to the reactor L1, and a smoothing capacitor C1 is connected to its output stage. A series circuit in which REL1 and MOSFET-Q1 are connected in series and IGBT-Q2 are connected in parallel to a diode D3 whose anode is connected to the negative side of the smoothing capacitor. Similarly, a series circuit in which REL2 and MOSFET-Q3 are connected in series and IGBT-Q4 are connected in parallel to a diode D4 whose anode is connected to the negative side of the smoothing capacitor.
電流検出部１０１は直流電源装置回路内に通流する電流を検出する機能を持つ。これを実現するには、例えばトランス、シャント抵抗、ホール素子などを使用すればよい。入力電流判定部１０２は電流検出部によって検出した電流値と予め設定された閾値との大小関係を判定する機能を持つ。 The current detection unit 101 has a function of detecting current flowing in the DC power supply circuit. In order to realize this, for example, a transformer, a shunt resistor, a Hall element or the like may be used. The input current determination unit 102 has a function of determining the magnitude relationship between the current value detected by the current detection unit and a preset threshold value.
ここで、温度検出部１０３は、ＭＯＳＦＥＴの素子温度（素子のパッケージ温度）、ＭＯＳＦＥＴの放熱フィンの温度、又は、ＭＯＳＦＥＴの周囲温度を検出する。実際にはサーミスタ等を使用する。温度判定部１０４は温度検出部１０３によって検出した、素子温度や放熱フィンの温度や周囲温度などの温度情報を、予め設定されている閾値と照合して、閾値との大小関係を判定する機能を持つ。ゼロクロス検出部１０５は入力電圧のゼロクロスを検出して、ゼロクロス判定部１０６によってその判定を行う。ＭＯＳＦＥＴ‐Ｑ１、Ｑ３やＩＧＢＴ‐Ｑ２、Ｑ４による力率改善制御は、この入力電圧のゼロクロスを基準にしてスイッチングを行う。 Here, the temperature detection unit 103 detects the element temperature of the MOSFET (element package temperature), the temperature of the MOSFET radiation fin, or the ambient temperature of the MOSFET. Actually, a thermistor or the like is used. The temperature determination unit 104 has a function of comparing the temperature information detected by the temperature detection unit 103, such as the element temperature, the temperature of the radiating fin, and the ambient temperature, with a preset threshold value and determining the magnitude relationship with the threshold value. Have. The zero cross detection unit 105 detects the zero cross of the input voltage, and the zero cross determination unit 106 performs the determination. The power factor correction control by the MOSFETs Q1, Q3 and IGBT-Q2, Q4 performs switching based on the zero cross of the input voltage.
コンバータ制御部１０７は入力電流判定部１０２、素子温度判定部１０４、ゼロクロス判定部１０６から送信された判定結果に基づいてＭＯＳＦＥＴ‐Ｑ１、Ｑ３とＩＧＢＴ‐Ｑ２、Ｑ４とリレーＲＥＬ１、ＲＥＬ２の駆動制御を行う機能を持つ。 Converter control unit 107 performs drive control of MOSFET-Q1, Q3 and IGBT-Q2, Q4 and relays REL1 and REL2 based on the determination results transmitted from input current determination unit 102, element temperature determination unit 104, and zero-cross determination unit 106. Has the ability to do.
以下、本実施例の直流電源装置の動作状態について説明する。電源電圧が正のサイクルで全波整流を行う場合について説明する。図３は入力電圧が正のサイクルで、ダイオードによる全波整流とＭＯＳＦＥＴによる同期整流制御を行った場合の電流の経路を示す図である。電源電圧が正のサイクルで全波整流を行う場合、図３のようにＭＯＳＦＥＴ‐Ｑ３とＲＥＬ２がオン状態となり、電流の経路は入力電源Ｖ１、リアクタＬ１、ダイオードＤ１、平滑コンデンサＣ１、ＭＯＳＦＥＴ−Ｑ３とダイオードＤ４、入力電源Ｖ１、となる。このように、通常のダイオード整流に加えてＭＯＳＦＥＴによる同期整流制御を行っているため、低損失、高効率となる。 Hereinafter, the operation state of the DC power supply device of the present embodiment will be described. A case where full-wave rectification is performed in a cycle where the power supply voltage is positive will be described. FIG. 3 is a diagram showing a current path when full-wave rectification using a diode and synchronous rectification control using a MOSFET are performed in a cycle where the input voltage is positive. When full-wave rectification is performed in a cycle where the power supply voltage is positive, MOSFET-Q3 and REL2 are turned on as shown in FIG. 3, and the current path is input power supply V1, reactor L1, diode D1, smoothing capacitor C1, and MOSFET-Q3. And a diode D4 and an input power source V1. Thus, since synchronous rectification control by MOSFET is performed in addition to normal diode rectification, low loss and high efficiency are achieved.
次に、電源電圧が負のサイクルで全波整流を行う場合について説明する。図４は、入力電圧が負のサイクルで、ダイオードによる全波整流とＭＯＳＦＥＴによる同期整流制御を行った場合の電流の経路を示す図である。電源電圧が負のサイクルで全波整流を行う場合、図４のようにＭＯＳＦＥＴ‐Ｑ１とＲＥＬ１がオン状態となり、電流の経路は入力電源Ｖ１、ダイオードＤ２、平滑コンデンサＣ１、ＭＯＳＦＥＴ−Ｑ１とダイオードＤ３、リアクタＬ１、入力電源Ｖ１、となる。この場合も正のサイクル時と同様に同期整流制御を行っている。 Next, a case where full-wave rectification is performed in a cycle where the power supply voltage is negative will be described. FIG. 4 is a diagram illustrating a current path when full-wave rectification using a diode and synchronous rectification control using a MOSFET are performed in a cycle where the input voltage is negative. When full-wave rectification is performed in a cycle in which the power supply voltage is negative, MOSFET-Q1 and REL1 are turned on as shown in FIG. 4, and the current path is input power supply V1, diode D2, smoothing capacitor C1, MOSFET-Q1 and diode D3. , Reactor L1 and input power source V1. In this case, the synchronous rectification control is performed as in the positive cycle.
次に、電源電圧が正のサイクルで力率改善制御を行う場合について説明する。図５は、入力電圧が正のサイクルで、ＭＯＳＦＥＴ‐Ｑ３ベタオン、リレーＲＥＬ１、ＲＥＬ２がオンの状態でＭＯＳＦＥＴ‐Ｑ１をスイッチングさせて、同期整流制御と力率改善制御を行った場合の回路電流の経路を示す図である。電源電圧が正のサイクルで力率改善制御を行う場合、図５のようにＭＯＳＦＥＴ‐Ｑ３とＲＥＬ２がオン状態となる。そして、ＭＯＳＦＥＴ‐Ｑ１がオン・オフ動作を行うことで、回路を短絡させる。そして、電流の経路は図５の通りである。このとき、リアクタＬ１にはエネルギーがチャージされ、ＭＯＳＦＥＴ‐Ｑ１がオン、オフのタイミングで平滑コンデンサＣ１にエネルギーがチャージされることで直流電圧が昇圧される。 Next, a case where power factor correction control is performed in a cycle where the power supply voltage is positive will be described. FIG. 5 shows the circuit current when the synchronous rectification control and the power factor improvement control are performed by switching the MOSFET-Q1 with the input voltage being positive and the MOSFET-Q3 beta-on and the relays REL1 and REL2 being on. It is a figure which shows a path | route. When power factor correction control is performed in a cycle where the power supply voltage is positive, MOSFET-Q3 and REL2 are turned on as shown in FIG. Then, the MOSFET-Q1 performs an on / off operation to short-circuit the circuit. The current path is as shown in FIG. At this time, the reactor L1 is charged with energy, and the DC voltage is boosted by charging the smoothing capacitor C1 with the timing when the MOSFET-Q1 is turned on and off.
次に、電源電圧が負のサイクルで力率改善制御を行う場合について説明する。図６は、入力電圧が負のサイクルで、ＭＯＳＦＥＴ‐Ｑ１ベタオン、リレーＲＥＬ１、ＲＥＬ２がオンの状態でＭＯＳＦＥＴ‐Ｑ３をスイッチングさせて、同期整流制御と力率改善制御を行った場合の回路電流の経路を示す図である。電源電圧が負のサイクルで力率改善制御を行う場合、図６のようにＭＯＳＦＥＴ‐Ｑ１とＲＥＬ１がベタオン状態となる。そして、ＭＯＳＦＥＴ‐Ｑ３がオン・オフ動作を行うことで、回路を短絡させる。そして、電流の経路は図６の通りである。このとき、リアクタＬ１にはエネルギーがチャージされ、ＭＯＳＦＥＴ‐Ｑ３がオンからオフのタイミングで平滑コンデンサＣ１にエネルギーがチャージされることで直流電圧が昇圧される。 Next, a case where power factor correction control is performed in a cycle where the power supply voltage is negative will be described. FIG. 6 shows the circuit current in the case where the synchronous rectification control and the power factor improvement control are performed by switching the MOSFET-Q3 with the MOSFET-Q1 beta-on and the relays REL1 and REL2 on in the negative cycle of the input voltage. It is a figure which shows a path | route. When power factor correction control is performed in a cycle in which the power supply voltage is negative, MOSFET-Q1 and REL1 are in a beta-on state as shown in FIG. Then, the MOSFET-Q3 performs an on / off operation to short-circuit the circuit. The current path is as shown in FIG. At this time, the reactor L1 is charged with energy, and the DC voltage is boosted by charging the smoothing capacitor C1 with the timing when the MOSFET-Q3 is turned from on to off.
以上が、全波整流と力率改善制御を行った場合の素子の動作状態と回路に流れる電流の経路である。 The above is the operating state of the element and the path of the current flowing through the circuit when full-wave rectification and power factor correction control are performed.
図７はＩＧＢＴのコレクタ電流とコレクタ‐エミッタ間電圧の関係と、ＭＯＳＦＥＴのドレイン電流とドレイン‐ソース間電圧の関係を比較した図である。同じ電流値で比較した場合に、低入力領域においてはＩＧＢＴのコレクタ‐エミッタ間電圧よりもＭＯＳＦＥＴのドレイン‐ソース間電圧の方が小さく、高入力領域においては関係が逆転していることが分かる。 FIG. 7 is a graph comparing the relationship between the collector current and the collector-emitter voltage of the IGBT and the relationship between the drain current and the drain-source voltage of the MOSFET. When comparing at the same current value, it can be seen that the drain-source voltage of the MOSFET is smaller than the collector-emitter voltage of the IGBT in the low input region, and the relationship is reversed in the high input region.
図８はＩＧＢＴのコレクタ電流と導通損失の関係と、ＭＯＳＦＥＴのドレイン電流と導通損の関係を示した図である。各素子の電流‐電圧の関係に従って、導通損失も低入力領域ではＭＯＳＦＥＴが有利、高入力領域ではＩＧＢＴが有利、という関係になっている。これは、ＭＯＳＦＥＴの損失は電流の２乗で変化するため、高入力領域においては損失が急激に悪化するためである。すなわち、高入力領域においてはＭＯＳＦＥＴよりもＩＧＢＴの方が損失は小さく発熱量も小さいため、熱破壊しにくいといえる。 FIG. 8 is a diagram showing the relationship between the collector current and conduction loss of the IGBT and the relationship between the drain current and conduction loss of the MOSFET. According to the current-voltage relationship of each element, the MOSFET is advantageous in the low input region and the conduction loss is advantageous in the high input region. This is because the loss of the MOSFET changes with the square of the current, and the loss rapidly deteriorates in the high input region. That is, in the high input region, the IGBT has a smaller loss and a smaller amount of heat generation than the MOSFET, so that it can be said that the thermal destruction is less likely.
そこで、本実施例に係る直流電源装置は高入力・高負荷・高温領域のように、ＭＯＳＦＥＴが熱破壊する危険性の高い領域においては、ＭＯＳＦＥＴのスイッチングを停止・回路から分断後、代わりにＩＧＢＴを使用して直流電源装置の動作を継続させる。すなわち、本実施例に係る直流電源装置は、ＭＯＳＦＥＴ（第１のＭＯＳＦＥＴ（Ｑ１）又は第２のＭＯＳＦＥＴ（Ｑ３））と並列に接続されたＩＧＢＴ（第１のＩＧＢＴ（Ｑ２）又は第２のＩＧＢＴ（Ｑ４））を備え、電流検出部１０１で検出された電流と温度検出部１０３で検出された温度が所定値未満であるとき、ＭＯＳＦＥＴのスイッチング制御を行い、電流検出部１０３で検出された電流と温度検出部１０３で検出された温度が所定値以上であるとき、ＩＧＢＴのスイッチング制御を行う。このようにスイッチング素子を切り換えることで、直流電源装置の動作を停止することなく、ＭＯＳＦＥＴの熱破壊を防ぐことができる。 Therefore, the DC power supply according to the present embodiment stops switching of the MOSFET in a region where there is a high risk of thermal destruction of the MOSFET, such as a high input / high load / high temperature region. Is used to continue the operation of the DC power supply. That is, the DC power supply device according to the present embodiment includes an IGBT (first IGBT (Q2) or second IGBT) connected in parallel with the MOSFET (first MOSFET (Q1) or second MOSFET (Q3)). (Q4)), and when the current detected by the current detection unit 101 and the temperature detected by the temperature detection unit 103 are less than a predetermined value, switching control of the MOSFET is performed, and the current detected by the current detection unit 103 When the temperature detected by the temperature detector 103 is equal to or higher than a predetermined value, IGBT switching control is performed. By switching the switching elements in this way, thermal destruction of the MOSFET can be prevented without stopping the operation of the DC power supply device.
以下、温度と電流を検出してＭＯＳＦＥＴが熱破壊する危険性が高いと判断した場合の各素子のスイッチングの状態、電流の流れ、直流電源装置全体の動作について説明する。 Hereinafter, the switching state of each element, the flow of current, and the operation of the entire DC power supply device when it is determined that the risk of thermal destruction of the MOSFET is high by detecting temperature and current will be described.
まず、電源電圧が正のサイクルで全波整流を行い、更にＭＯＳＦＥＴの保護を行う場合について説明する。図９は、入力電圧が正のサイクルでＭＯＳＦＥＴ‐Ｑ３をオフ、ＲＥＬ２もオフの状態でダイオードによる全波整流のみを行った場合の回路電流の経路を示す図である。電源電圧が正のサイクルで全波整流を行い、更にＭＯＳＦＥＴの保護を行う場合は、図９に示すように保護制御実施前にオン状態であった、ＭＯＳＦＥＴ‐Ｑ３とリレーＲＥＬ２をオフにすることでダイオードＤ４にのみ電流を通流させる。 First, a case where full-wave rectification is performed in a cycle in which the power supply voltage is positive and further MOSFET protection is described. FIG. 9 is a diagram showing circuit current paths when only full-wave rectification is performed by a diode with MOSFET-Q3 off and REL2 off in a cycle where the input voltage is positive. When full-wave rectification is performed in a cycle in which the power supply voltage is positive, and further MOSFET protection is performed, MOSFET-Q3 and relay REL2 that were on before the protection control is performed are turned off as shown in FIG. The current is passed only through the diode D4.
次に、電源電圧が負のサイクルで全波整流を行い、更にＭＯＳＦＥＴの保護を行う場合について説明する。図１０は、入力電圧が負のサイクルでＭＯＳＦＥＴ‐Ｑ１をオフ、ＲＥＬ１もオフの状態でダイオードによる全波整流のみを行った場合の回路電流の経路を示す図である。電源電圧が負のサイクルで全波整流を行い、更にＭＯＳＦＥＴの保護を行う場合は、図１０に示すように保護制御実施前にオン状態であったＭＯＳＦＥＴ‐Ｑ１とリレーＲＥＬ１をオフにすることでダイオードＤ３にのみ電流を通流させる。 Next, a case where full-wave rectification is performed in a cycle in which the power supply voltage is negative and MOSFET protection is further described. FIG. 10 is a diagram showing a circuit current path when only full-wave rectification by a diode is performed in a state in which MOSFET-Q1 is turned off and REL1 is also turned off in a cycle where the input voltage is negative. When full-wave rectification is performed in a cycle in which the power supply voltage is negative and further MOSFET protection is performed, the MOSFET-Q1 and the relay REL1 that are on before the protection control is performed are turned off as shown in FIG. Current is passed only through the diode D3.
次に、電源電圧が正のサイクルで力率改善制御を行い、更にＭＯＳＦＥＴの保護を行う場合について説明する。図１１は、入力電圧が正のサイクルでＭＯＳＦＥＴ‐Ｑ１、Ｑ３はオフ、リレーＲＥＬ１、ＲＥＬ２もオフの状態でＩＧＢＴ‐Ｑ２をスイッチングさせて、ＩＧＢＴによる力率改善制御を行った場合の回路電流の経路を示す図である。電源電圧が正のサイクルで力率改善制御を行い、更にＭＯＳＦＥＴの保護を行う場合は、図１１に示すように保護制御実施前にスイッチングさせていたＭＯＳＦＥＴ‐Ｑ１をオフにさせ、ＲＥＬ１もオフとする。そして、ＭＯＳＦＥＴ‐Ｑ１に並列接続されていたＩＧＢＴ‐Ｑ２をスイッチング動作させる。また、ＭＯＳＦＥＴ‐Ｑ３とＲＥＬ２もオフ状態にさせる。以上、電流の流れる経路は、入力電源Ｖ１、リアクトルＬ１、ＩＧＢＴ‐Ｑ２、ダイオードＤ４、入力電源Ｖ１、となる。 Next, a case where power factor correction control is performed in a cycle in which the power supply voltage is positive and further MOSFET protection is described. FIG. 11 shows the circuit current when the IGBT-Q2 is switched while the MOSFET-Q1 and Q3 are off and the relays REL1 and REL2 are off in the cycle where the input voltage is positive, and the power factor improvement control by the IGBT is performed. It is a figure which shows a path | route. When power factor correction control is performed in a cycle in which the power supply voltage is positive and further MOSFET protection is performed, as shown in FIG. 11, MOSFET-Q1 that has been switched before the protection control is performed is turned off, and REL1 is also turned off. To do. Then, the IGBT-Q2 connected in parallel to the MOSFET-Q1 is switched. Further, the MOSFET-Q3 and REL2 are also turned off. As described above, the path through which the current flows is the input power supply V1, the reactor L1, the IGBT-Q2, the diode D4, and the input power supply V1.
次に、電源電圧が負のサイクルで力率改善制御を行い、更にＭＯＳＦＥＴの保護を行う場合について説明する。図１２は、入力電圧が負のサイクルでＭＯＳＦＥＴ‐Ｑ１、Ｑ２はオフ、リレーＲＥＬ１、ＲＥＬ２もオフの状態でＩＧＢＴ‐Ｑ４をスイッチングさせて、ＩＧＢＴによる力率改善制御を行った場合の回路電流の経路を示す図である。電源電圧が負のサイクルで力率改善制御を行い、更にＭＯＳＦＥＴの保護を行う場合は、図１２に示すように保護制御実施前にスイッチングさせていたＱ３をオフにさせ、ＲＥＬ２もオフとする。そして、ＭＯＳＦＥＴ‐Ｑ３に並列接続されていたＩＧＢＴ‐Ｑ４をスイッチング動作させる。また、ＭＯＳＦＥＴ‐Ｑ１とＲＥＬ１もオフ状態にさせる。以上、電流の流れる経路は、入力電源Ｖ１、ＩＧＢＴ‐Ｑ４、ダイオードＤ３、リアクトルＬ１、入力電源Ｖ１、となる。 Next, a case where power factor correction control is performed in a cycle in which the power supply voltage is negative and MOSFET protection is further described. FIG. 12 shows the circuit current when the IGBT-Q4 is switched while the MOSFET-Q1 and Q2 are off and the relays REL1 and REL2 are off in a cycle where the input voltage is negative, and the power factor improvement control by the IGBT is performed. It is a figure which shows a path | route. When power factor correction control is performed in a cycle in which the power supply voltage is negative and further MOSFET protection is performed, Q3 that has been switched before the protection control is performed is turned off and REL2 is also turned off as shown in FIG. Then, the IGBT-Q4 connected in parallel to the MOSFET-Q3 is switched. Also, MOSFET-Q1 and REL1 are turned off. As described above, the path through which the current flows is the input power supply V1, the IGBT-Q4, the diode D3, the reactor L1, and the input power supply V1.
まとめると、本実施例に係る直流電圧装置は、図２に示すように、第１の入力端と第１の出力端との間を結ぶ第１の経路（ＬＨ１）と、第１の経路（ＬＨ１）上に設けられた第１のリアクトル（Ｌ１）と、第１の経路（ＬＨ１）上に設けられ、第１のリアクトル（Ｌ１）に対して第１の出力端側で直列に接続されて、そのアノードを第１のリアクトル（Ｌ１）側に向けて設けられる第１のダイオード（Ｄ１）と、第２の入力端と第２の出力端との間を結ぶ第２の経路（ＬＨ２）と、第１のダイオード（Ｄ１）のカソード側と第２の経路（ＬＨ２）とを接続する経路（ＬＨ３）上に設けられた第２のダイオード（Ｄ２）と、第１のリアクトル（Ｌ１）と第１のダイオード（Ｄ１）との間と、第２の経路（ＬＨ２）とを接続する経路（ＬＨ４）上に設けられた第３のダイオード（Ｄ３）と、第２の経路（ＬＨ２）上に設けられた第４のダイオード（Ｄ４）とを有し、第３のダイオード（Ｄ３）は第１のＭＯＳＦＥＴ（Ｑ１）及び第１のＩＧＢＴ（Ｑ２）と並列に接続され、第４のダイオード（Ｄ４）は第２のＭＯＳＦＥＴ（Ｑ３）及び第２のＩＧＢＴ（Ｑ４）と並列に接続され、電流検出部（１０１）で検出された電流と温度検出部（１０３）で検出された温度が所定値未満であるとき、第１のＭＯＳＦＥＴ（Ｑ１）及び第２のＭＯＳＦＥＴ（Ｑ３）のスイッチング制御を行い、電流検出部（１０１）で検出された電流と温度検出部（１０３）で検出された温度が所定値以上であるとき、第１のＩＧＢＴ（Ｑ２）及び第２のＩＧＢＴ（Ｑ４）のスイッチング制御を行う。 In summary, as shown in FIG. 2, the DC voltage device according to the present embodiment includes a first path (LH1) connecting the first input terminal and the first output terminal, and a first path ( The first reactor (L1) provided on the LH1) and the first reactor (LH1) are connected in series on the first output end side with respect to the first reactor (L1). , A first diode (D1) provided with the anode directed toward the first reactor (L1), and a second path (LH2) connecting the second input terminal and the second output terminal The second diode (D2) provided on the path (LH3) connecting the cathode side of the first diode (D1) and the second path (LH2), the first reactor (L1) and the second On the path (LH4) connecting the first diode (D1) to the second path (LH2) The third diode (D3) is provided, and the fourth diode (D4) is provided on the second path (LH2). The third diode (D3) is a first MOSFET (Q1). ) And the first IGBT (Q2) in parallel, the fourth diode (D4) is connected in parallel with the second MOSFET (Q3) and the second IGBT (Q4), and the current detection unit (101) And the temperature detected by the temperature detector (103) are less than a predetermined value, the switching control of the first MOSFET (Q1) and the second MOSFET (Q3) is performed, and the current detector ( When the current detected in 101) and the temperature detected by the temperature detection unit (103) are equal to or higher than a predetermined value, switching control of the first IGBT (Q2) and the second IGBT (Q4) is performed.
図７に示すように、線Ｉ１で示すＩＧＢＴのコレクタ電流に対するコレクタ−エミッタ間電圧特性は、コレクタ電流の立ち上がり区間において右肩上がりに急増し、その後、なだらかな右肩上がりの略線形の増加特性を描く。一方、線Ｍ１で示すＭＯＳＦＥＴのドレイン電流に対するドレイン−ソース間電圧特性は、全ての電流区間においてなだらかな右肩上がりの略線形の増加特性を描く。これら特性Ｉ１及び特性Ｍ１は、図７に示すように、臨界点において交差している。つまり、臨界点に比べて低入力領域では、ＩＧＢＴに係るコレクタ−エミッタ間電圧特性Ｉ１がＭＯＳＦＥＴに係るドレイン−ソース間電圧特性Ｍ１を上回っているが、臨界点に比べて高入力領域では、両者Ｔ１、Ｍ１の関係が逆転している。 As shown in FIG. 7, the collector-emitter voltage characteristic with respect to the collector current of the IGBT indicated by the line I <b> 1 increases rapidly in the rising period of the collector current, and then gradually increases in a substantially linear manner. Draw. On the other hand, the drain-source voltage characteristic with respect to the drain current of the MOSFET indicated by the line M1 draws a substantially linear increase characteristic that gently rises in all current sections. These characteristic I1 and characteristic M1 intersect at a critical point as shown in FIG. That is, in the low input region compared to the critical point, the collector-emitter voltage characteristic I1 related to the IGBT exceeds the drain-source voltage characteristic M1 related to the MOSFET, but in the high input region compared to the critical point, both The relationship between T1 and M1 is reversed.
図７に表す関係に起因して、図８に示すように、臨界点に比べて低入力領域では、線Ｉ２で示すＩＧＢＴに係る損失特性が、線Ｍ２で示すＭＯＳＦＥＴに係る損失特性を上回っているが、臨界点に比べて高入力領域では、両者Ｉ２、Ｍ２の関係が逆転している。つまり、ＭＯＳＦＥＴの損失は、低入力領域ではＩＧＢＴよりも小さいが、高入力領域では、ＩＧＢＴよりも大きくなる。これは、ＭＯＳＦＥＴの損失が電流の２乗で増大するからである。このため、ＭＯＳＦＥＴは、高負荷時の温度上昇割合がＩＧＢＴと比べて大きく、熱破壊を起こしやすいという欠点がある。 Due to the relationship shown in FIG. 7, as shown in FIG. 8, in the low input region compared to the critical point, the loss characteristic related to the IGBT indicated by line I2 exceeds the loss characteristic related to the MOSFET indicated by line M2. However, in the high input region compared to the critical point, the relationship between both I2 and M2 is reversed. That is, the loss of the MOSFET is smaller than the IGBT in the low input region, but is larger than the IGBT in the high input region. This is because the MOSFET loss increases with the square of the current. For this reason, the MOSFET has a disadvantage that the rate of temperature increase at high load is larger than that of the IGBT, and thermal breakdown is likely to occur.
この欠点を無くすために、仮に、ＭＯＳＦＥＴによるスイッチング制御を行うか否かを判定する際の基準となる電流閾値を、余裕をみて低い固定値に設定したとする。この場合、本来保護制御を行うための素子温度となるまでにはまだ余裕があるにも関わらず、電流閾値が低い素子温度に対応して設定されているため、熱破壊危険状態に達したと判定して、保護制御が実施されてしまう。このため、ＭＯＳＦＥＴによる同期整流制御が停止するので、直流電源装置の高効率制御を行う妨げになる。 In order to eliminate this defect, it is assumed that the current threshold value used as a reference when determining whether or not to perform switching control by the MOSFET is set to a low fixed value with a margin. In this case, although there is still a margin before the element temperature for originally carrying out protection control, the current threshold is set corresponding to the element temperature that is low, so that a thermal destruction danger state has been reached. Judgment and protection control will be implemented. For this reason, synchronous rectification control by the MOSFET is stopped, which hinders high-efficiency control of the DC power supply device.
そこで、本実施例の直流電源装置では、素子温度、又はフィン温度、又は周囲温度が予め定められた温度よりも低い領域では、電流閾値が大きく（又は高く）なり、素子温度がその低い領域よりも高い領域では、電流閾値が小さく（又は低く）なるように、素子温度、又はフィン温度、又は周囲温度の変化に応じた可変温度特性を有する電流閾値を図１３のように設定した。すなわち、本実施例に係る直流電源装置は、交流電力を直流電力に変換し、ＭＯＳＦＥＴ（第１のＭＯＳＦＥＴ（Ｑ１）又は第２のＭＯＳＦＥＴ（Ｑ３））を有する直流電源回路ＬＨと、ＭＯＳＦＥＴの温度を検出する温度検出部１０３と、直流電源回路ＬＨ内に流れる電流を検出する電流検出部１０１とを備え、電流検出部１０１で検出された電流が所定値（電流閾値）を超えた場合にＭＯＳＦＥＴのスイッチング制御を停止し、温度検出部で検出した温度が低いほど所定値（電流閾値）は高くなる。このような本実施例に係る直流電源装置によれば、直流電源装置の高効率運転を妨げることなく、ＭＯＳＦＥＴの温度保護を行うことが可能である。 Therefore, in the DC power supply device of this embodiment, the current threshold value is larger (or higher) in the region where the element temperature, the fin temperature, or the ambient temperature is lower than the predetermined temperature, and the element temperature is lower than the lower region. In the higher region, the current threshold having variable temperature characteristics corresponding to changes in the element temperature, the fin temperature, or the ambient temperature is set as shown in FIG. 13 so that the current threshold becomes smaller (or lower). That is, the DC power supply device according to the present embodiment converts the AC power into DC power and has a MOSFET (first MOSFET (Q1) or second MOSFET (Q3)) and a temperature of the MOSFET. And a current detection unit 101 for detecting a current flowing in the DC power supply circuit LH. When the current detected by the current detection unit 101 exceeds a predetermined value (current threshold), the MOSFET As the temperature detected by the temperature detector is lower, the predetermined value (current threshold value) is higher. According to such a DC power supply device according to the present embodiment, it is possible to protect the temperature of the MOSFET without disturbing the high-efficiency operation of the DC power supply device.
ここで、温度検出部１０３は、上述したとおり、ＭＯＳＦＥＴの素子温度（素子のパッケージ温度）、ＭＯＳＦＥＴの放熱フィンの温度、又は、ＭＯＳＦＥＴの周囲温度等を検出することで、ＭＯＳＦＥＴの温度を検出する。 Here, as described above, the temperature detection unit 103 detects the MOSFET temperature by detecting the element temperature of the MOSFET (element package temperature), the temperature of the heat dissipation fin of the MOSFET, the ambient temperature of the MOSFET, or the like. .
図１３は、直流電源装置へ流れる回路電流と、ＭＯＳＦＥＴ‐Ｑ１、Ｑ３の素子温度、又はフィン温度、又は周囲温度との双方に係る特性領域上に対応付けられた電流制限閾値情報を表す図である。図１３の縦軸は、直流電源装置へ流れる回路電流、横軸は素子温度、又はフィン温度、又は周囲温度であり、縦軸と横軸との双方に係る特性領域が、電流制限閾値情報により区画される。また、電流制限閾値情報は、定常領域Ｄｓと保護制御実施領域Ｄｐを決定する。定常領域Ｄｓから保護制御実施領域Ｄｐに入ると保護制御実施される。 FIG. 13 is a diagram showing current limit threshold information associated with the characteristic region related to both the circuit current flowing to the DC power supply device and the element temperature, the fin temperature, or the ambient temperature of the MOSFETs Q1 and Q3. is there. The vertical axis in FIG. 13 is the circuit current flowing to the DC power supply device, the horizontal axis is the element temperature, the fin temperature, or the ambient temperature, and the characteristic region related to both the vertical axis and the horizontal axis is represented by the current limit threshold information. Partitioned. Further, the current limit threshold information determines the steady region Ds and the protection control execution region Dp. When entering the protection control execution area Dp from the steady area Ds, the protection control is executed.
電流制限閾値情報は、ＭＯＳＦＥＴ‐Ｑ１、Ｑ３の温度が熱破壊危険状態に到達していることを判定するための電流閾値である。電流制限閾値情報は、温度検出部１０３（図２参照）で検出される素子温度、又はフィン温度、又は周囲温度が低い領域では、高く、素子温度、又はフィン温度、又は周囲温度が低い領域と比べて高い領域では、低くなるように、素子温度、又はフィン温度、又は周囲温度の変化に応じた可変温度特性を有して設定されている。 The current limit threshold information is a current threshold for determining that the temperatures of the MOSFETs Q1 and Q3 have reached the danger state of thermal destruction. The current limit threshold information is high in the region where the element temperature, the fin temperature, or the ambient temperature detected by the temperature detection unit 103 (see FIG. 2) is low, and is the region where the element temperature, the fin temperature, or the ambient temperature is low. In contrast, the temperature is set to have a variable temperature characteristic corresponding to changes in the element temperature, the fin temperature, or the ambient temperature so as to be lower in a higher region.
次に、図１４〜図１８に示すフローチャートを使って、制御の流れを説明する。図１４−１８は、実施例に係る直流電源装置の動作を示すフローチャートである。 Next, the flow of control will be described using the flowcharts shown in FIGS. FIG. 14-18 is a flowchart illustrating the operation of the DC power supply device according to the embodiment.
まず、図１４のステップ１（Ｓ１）で直流電源装置が駆動される。ここで、電流検出部１０１で直流電源装置内に流れる電流を検出し、入力電流判定部１０２で電流値を判定する。温度検出部１０３で素子温度、又はフィン温度、又は周囲温度を検出し、温度判定部１０４で温度を判定する。そして、次のステップ２（Ｓ２）では、前述の回路電流と温度との電流温度交点を、電流制限閾値情報と照合する。 First, the DC power supply is driven in step 1 (S1) of FIG. Here, a current flowing through the DC power supply device is detected by the current detection unit 101, and a current value is determined by the input current determination unit 102. The temperature detection unit 103 detects the element temperature, the fin temperature, or the ambient temperature, and the temperature determination unit 104 determines the temperature. In the next step 2 (S2), the current-temperature intersection between the circuit current and the temperature is checked against the current limit threshold information.
この照合により、ステップ３（Ｓ３）において、その電流温度交点が、図１４に示す定常領域Ｄｓか保護制御実施領域Ｄｐのどちらの領域に存在するか否かが判定される。 By this collation, in step 3 (S3), it is determined whether the current temperature intersection exists in either the steady region Ds or the protection control execution region Dp shown in FIG.
このとき、保護制御実施領域Ｄｐにいると判定された場合は入力電圧のサイクルが正か負か、直流電源装置の動作状態がパッシブかアクティブか、の判定により以降のステップに進んでいく（Ｓ４〜Ｓ６）。 At this time, if it is determined that the current state is in the protection control execution region Dp, the process proceeds to the subsequent steps by determining whether the cycle of the input voltage is positive or negative and whether the operating state of the DC power supply is passive or active (S4). To S6).
図１５〜図１８に示すように、各動作状態に応じて前述したように、ＭＯＳＦＥＴ‐Ｑ１、Ｑ３とＩＧＢＴ‐Ｑ２、Ｑ４とリレーＲＥＬ１とＲＥＬ２の駆動制御をコンバータ制御手段１０７によって行う（Ｓ７、Ｓ１０、Ｓ１３、Ｓ１６）。そして、制御実施後に再び定常領域Ｄｓにいるか否かの判定を行い（Ｓ８、Ｓ１１、Ｓ１４、Ｓ１７）、定常領域Ｄｓに戻り、熱破壊の危険性が無いと判断された場合にＩＧＢＴによるスイッチングから、ＭＯＳＦＥＴによるスイッチング制御に戻す（Ｓ９、Ｓ１２、Ｓ１５、Ｓ１８）。 As shown in FIGS. 15 to 18, as described above in accordance with each operation state, drive control of MOSFET-Q 1, Q 3 and IGBT-Q 2, Q 4 and relays REL 1 and REL 2 is performed by converter control means 107 (S 7, S10, S13, S16). Then, after performing the control, it is determined whether or not the vehicle is in the steady region Ds again (S8, S11, S14, S17). When the control returns to the steady region Ds and it is determined that there is no risk of thermal destruction, switching from the IGBT is performed. Return to switching control by the MOSFET (S9, S12, S15, S18).
一連の動作が終了した後、再びステップ２（Ｓ２）に戻り、再び回路電流と素子温度等の温度情報の照合を行う。 After the series of operations is completed, the process returns to Step 2 (S2) again, and the circuit current and temperature information such as the element temperature are collated again.
以上のように、本実施例に係る直流電圧装置は、回路電流と温度情報に基づいてＭＯＳＦＥＴによるスイッチング制御からＩＧＢＴによるスイッチング制御に切り替えることで、直流電源装置の動作を停止することなく、ＭＯＳＦＥＴの熱破壊を防ぐことが可能である。 As described above, the DC voltage device according to the present embodiment switches the switching control by the MOSFET to the switching control by the IGBT based on the circuit current and the temperature information, so that the operation of the DC power supply device is not stopped. It is possible to prevent thermal destruction.
また、本実施例に係る直流電圧装置は、素子温度、又はフィン温度、又は周囲温度が予め定められた温度よりも低い領域では、電流閾値が大きく（又は高く）なり、素子温度がその低い領域よりも高い領域では、電流閾値が小さく（又は低く）なるように、素子温度、又はフィン温度、又は周囲温度の変化に応じた可変温度特性を有する電流閾値を設定したので、直流電源装置の高効率運転を妨げることなく、ＭＯＳＦＥＴの温度保護を行うことが可能である。 Further, in the DC voltage device according to the present embodiment, in the region where the element temperature, the fin temperature, or the ambient temperature is lower than the predetermined temperature, the current threshold value is large (or high), and the element temperature is low. In the higher region, the current threshold having a variable temperature characteristic corresponding to the change in the element temperature, the fin temperature, or the ambient temperature is set so that the current threshold becomes smaller (or lower). It is possible to protect the MOSFET temperature without hindering efficient operation.
本実施例の同期整流制御に使用しているＭＯＳＦＥＴを低オン抵抗のスーパー・ジャンクションＭＯＳＦＥＴやＳｉＣ−ＭＯＳＦＥＴを使用することで、さらに高効率な直流電源装置を提供することが可能である。 By using a low junction resistance super junction MOSFET or SiC-MOSFET as the MOSFET used for the synchronous rectification control of this embodiment, it is possible to provide a more efficient DC power supply device.
また、保護制御を行うための電流値情報として、電流検出部１０１によって検出した回路全体に通流する電流値用いた場合を例に挙げて説明したが、ＭＯＳＦＥＴ−Ｑ１、Ｑ３のドレイン電流を検出して保護制御を行ってもよい。この場合、ＭＯＳＦＥＴ−Ｑ１、Ｑ３に通流する電流を直接検出することが可能であるため、より確実な保護制御を行うことが可能である。 In addition, the case where the current value flowing through the entire circuit detected by the current detection unit 101 is used as the current value information for performing the protection control has been described as an example, but the drain currents of the MOSFETs Q1 and Q3 are detected. Then, protection control may be performed. In this case, since it is possible to directly detect the current flowing through the MOSFETs Q1 and Q3, more reliable protection control can be performed.
また、本実施例の直流電源装置を空気調和機の室外機に適用することで、ＭＯＳＦＥＴの保護が可能な信頼性が高く、高効率運転が可能な空気調和機を提供することが可能である。 In addition, by applying the DC power supply device of this embodiment to an outdoor unit of an air conditioner, it is possible to provide an air conditioner that can protect MOSFETs and has high reliability and can be operated with high efficiency. .
１０１ 電流検出部
１０２ 入力電流判定部
１０３ 温度検出部
１０４ 温度判定部
１０５ ゼロクロス検出部
１０６ ゼロクロス判定部
１０７ コンバータ制御部
１０８ 負荷
ＬＨ 直流電圧回路
ＬＨ１ 第１の経路
ＬＨ２ 第２の経路
Ｌ１ リアクトル
Ｄ１、Ｄ２、Ｄ３、Ｄ４ ダイオード
Ｑ１、Ｑ３ ＭＯＳＦＥＴ
Ｑ２、Ｑ４ ＩＧＢＴ
ＲＥＬ１、ＲＥＬ２ リレー
Ｃ１ 平滑コンデンサ
Ｖ１ 交流電源
DESCRIPTION OF SYMBOLS 101 Current detection part 102 Input current determination part 103 Temperature detection part 104 Temperature determination part 105 Zero cross detection part 106 Zero cross determination part 107 Converter control part 108 Load LH DC voltage circuit LH1 1st path | route LH2 2nd path | route L1 reactor D1, D2 , D3, D4 Diode Q1, Q3 MOSFET
Q2, Q4 IGBT
REL1, REL2 Relay C1 Smoothing capacitor V1 AC power supply
Claims (4)
ＭＯＳＦＥＴを有する直流電源回路と、
前記ＭＯＳＦＥＴの温度を検出する温度検出部と、
前記直流電源回路に流れる電流を検出する電流検出部とを備え、
前記電流検出部で検出された電流が所定値を超えた場合に前記ＭＯＳＦＥＴのスイッチング制御を停止し、
前記温度検出部で検出した温度が低いほど前記所定値は高くなる直流電源装置。 In a DC power supply device that converts AC power into DC power,
A DC power supply circuit having a MOSFET;
A temperature detector for detecting the temperature of the MOSFET;
A current detector for detecting a current flowing in the DC power supply circuit;
When the current detected by the current detection unit exceeds a predetermined value, the switching control of the MOSFET is stopped,
The DC power supply device, wherein the predetermined value increases as the temperature detected by the temperature detection unit decreases.
前記電流検出部で検出された電流が前記所定値未満であるとき、前記ＭＯＳＦＥＴのスイッチング制御を行い、
前記電流検出部で検出された電流が前記所定値以上であるとき、前記ＩＧＢＴのスイッチング制御を行うことを特徴とする請求項１に記載の直流電源装置。 An IGBT connected in parallel with the MOSFET,
When the current detected by the current detection unit is less than the predetermined value, switching control of the MOSFET,
2. The DC power supply device according to claim 1, wherein when the current detected by the current detection unit is equal to or greater than the predetermined value, switching control of the IGBT is performed.
室内熱交換器と、室内送風ファンとを有する室内機とを備える空気調和機。 An outdoor unit having a compressor connected to the DC power supply device according to any one of claims 1 to 3, an outdoor heat exchanger, and an outdoor fan.
An air conditioner comprising an indoor heat exchanger and an indoor unit having an indoor fan.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018074274A1 (en) * | 2016-10-19 | 2018-04-26 | 日立ジョンソンコントロールズ空調株式会社 | Power conversion device and air conditioner |
| WO2020090788A1 (en) * | 2018-11-02 | 2020-05-07 | 株式会社デンソー | Power conversion device |
| JP2020078239A (en) * | 2018-11-02 | 2020-05-21 | 株式会社デンソー | Power conversion device |
| JP2020171194A (en) * | 2020-07-06 | 2020-10-15 | 日立ジョンソンコントロールズ空調株式会社 | Power conversion device and air conditioner |
| JP2021193878A (en) * | 2020-11-19 | 2021-12-23 | 日立ジョンソンコントロールズ空調株式会社 | Dc power supply device and air conditioner |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08308132A (en) * | 1995-04-28 | 1996-11-22 | Origin Electric Co Ltd | Feeding device for transmitter and its control method |
| JPH10201235A (en) * | 1996-12-27 | 1998-07-31 | Canon Inc | Power supply circuit |
| JP2002078104A (en) * | 2000-08-24 | 2002-03-15 | Nippon Yusoki Co Ltd | Freighter control device |
| JP2005295653A (en) * | 2004-03-31 | 2005-10-20 | Densei Lambda Kk | Switching power supply |
| JP2007014075A (en) * | 2005-06-29 | 2007-01-18 | Matsushita Electric Ind Co Ltd | Motor driving unit |
| JP2007209098A (en) * | 2006-01-31 | 2007-08-16 | Toshiba Kyaria Kk | Inverter device |
| JP2010017061A (en) * | 2008-07-07 | 2010-01-21 | Mitsubishi Electric Corp | Power converter and lift controller |
| WO2011096232A1 (en) * | 2010-02-05 | 2011-08-11 | パナソニック株式会社 | Power conversion device |
| JP2013059228A (en) * | 2011-09-09 | 2013-03-28 | Daikin Ind Ltd | Control device for switching power-supply circuit and heat pump unit |
-
2014
- 2014-01-31 JP JP2014016333A patent/JP2015144496A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH08308132A (en) * | 1995-04-28 | 1996-11-22 | Origin Electric Co Ltd | Feeding device for transmitter and its control method |
| JPH10201235A (en) * | 1996-12-27 | 1998-07-31 | Canon Inc | Power supply circuit |
| JP2002078104A (en) * | 2000-08-24 | 2002-03-15 | Nippon Yusoki Co Ltd | Freighter control device |
| JP2005295653A (en) * | 2004-03-31 | 2005-10-20 | Densei Lambda Kk | Switching power supply |
| JP2007014075A (en) * | 2005-06-29 | 2007-01-18 | Matsushita Electric Ind Co Ltd | Motor driving unit |
| JP2007209098A (en) * | 2006-01-31 | 2007-08-16 | Toshiba Kyaria Kk | Inverter device |
| JP2010017061A (en) * | 2008-07-07 | 2010-01-21 | Mitsubishi Electric Corp | Power converter and lift controller |
| WO2011096232A1 (en) * | 2010-02-05 | 2011-08-11 | パナソニック株式会社 | Power conversion device |
| JP2013059228A (en) * | 2011-09-09 | 2013-03-28 | Daikin Ind Ltd | Control device for switching power-supply circuit and heat pump unit |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2018074274A1 (en) * | 2016-10-19 | 2018-04-26 | 日立ジョンソンコントロールズ空調株式会社 | Power conversion device and air conditioner |
| JP2018068028A (en) * | 2016-10-19 | 2018-04-26 | 日立ジョンソンコントロールズ空調株式会社 | Electric power conversion system and air conditioner |
| CN109874379A (en) * | 2016-10-19 | 2019-06-11 | 日立江森自控空调有限公司 | Power inverter and air conditioner |
| WO2020090788A1 (en) * | 2018-11-02 | 2020-05-07 | 株式会社デンソー | Power conversion device |
| JP2020078239A (en) * | 2018-11-02 | 2020-05-21 | 株式会社デンソー | Power conversion device |
| JP6996539B2 (en) | 2018-11-02 | 2022-01-17 | 株式会社デンソー | Power converter |
| JP2020171194A (en) * | 2020-07-06 | 2020-10-15 | 日立ジョンソンコントロールズ空調株式会社 | Power conversion device and air conditioner |
| JP2021193878A (en) * | 2020-11-19 | 2021-12-23 | 日立ジョンソンコントロールズ空調株式会社 | Dc power supply device and air conditioner |
| JP7175364B2 (en) | 2020-11-19 | 2022-11-18 | 日立ジョンソンコントロールズ空調株式会社 | DC power supply and air conditioner |
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