JP2015142042A - 給電部カバー構造及び半導体製造装置 - Google Patents
給電部カバー構造及び半導体製造装置 Download PDFInfo
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 25
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 24
- 230000007246 mechanism Effects 0.000 claims abstract description 14
- 239000011261 inert gas Substances 0.000 claims abstract description 9
- 229920005989 resin Polymers 0.000 claims description 97
- 239000011347 resin Substances 0.000 claims description 97
- 239000012212 insulator Substances 0.000 claims description 2
- 238000009833 condensation Methods 0.000 abstract description 17
- 230000005494 condensation Effects 0.000 abstract description 17
- 238000007789 sealing Methods 0.000 abstract description 3
- 239000003570 air Substances 0.000 description 31
- 239000007789 gas Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000002265 prevention Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
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- 238000012546 transfer Methods 0.000 description 3
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000006073 displacement reaction Methods 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 229920002530 polyetherether ketone Polymers 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- BSYNRYMUTXBXSQ-UHFFFAOYSA-N Aspirin Chemical compound CC(=O)OC1=CC=CC=C1C(O)=O BSYNRYMUTXBXSQ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
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- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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Abstract
【解決手段】ソケットとプラグとが嵌合された給電部と、前記給電部を覆い、該給電部を密閉するカバー構造と、前記カバー構造内にドライエアー又は不活性ガスを供給する供給機構と、を有し、前記ドライエアー又は不活性ガスは、前記給電部と前記カバー構造との間の隙間を通って前記カバー構造の内部に供給される給電部カバー構造が提供される。
【選択図】図6
Description
まず、本発明の一実施形態に係る半導体製造装置1の全体構成について、図1を参照しながら説明する。図1は、本発明の一実施形態に係る半導体製造装置1の全体構成図である。本実施形態では、半導体製造装置1の一例として容量結合型プラズマエッチング装置を挙げる。半導体製造装置1は、例えば表面がアルマイト処理(陽極酸化処理)されたアルミニウムからなる円筒形の真空チャンバ(処理容器)10を有している。チャンバ10は、接地されている。
次に、本実施形態にかかる給電部カバー構造76の一例について、図2〜図4を参照しながら説明する。図2は、本発明の一実施形態に係る給電部カバー構造76のプラグ側の構成例を示す。図3は、本発明の一実施形態に係る給電部カバー構造76のソケット側の構成例を示す。図4は、一実施形態に係る給電部カバー構造76の縦断面の一例を示す。なお、図1で示した給電部カバー構造76a、76b,76c,76d,87eは、同一構造を有する。よって、以下では、一の給電部カバー構造76の構成を説明することによって、給電部カバー構造76a、76b,76c,76d,76eのすべての構成を説明することとする。
次に、給電部カバー構造76に設けられた結露防止のためのドライエアーの供給機構について、図6を参照しながら説明する。図6は、一実施形態に係るドライエアーの供給機構の一例を示す図である。図6(a)は、載置台12(図1を参照)の下面に設けられた第3の樹脂カバー92とヒーターフィルター77との間に配置された給電部カバー構造76の斜視図である。図6(b)は、図6(a)の第3の樹脂カバー92及び給電部カバー構造76をD−D断面で切断したときの縦断面図である。
最後に、給電部カバー構造76のプラグ80の取り付け時の動作例について、図7を参照しながら説明する。図7は、一実施形態に係る給電部カバー構造のプラグ80の取り付け時の動作の一例を示す。図7に示すプラグ80の取り付けは、例えば、半導体製造装置1の組み立て時や半導体製造装置1のメンテナンス時に実行され得る。
10:チャンバ
12:載置台
31:第1高周波電源
32:第2高周波電源
40:静電チャック
44:交流電源
48:制御部
75:ヒーター
76:給電部カバー構造
77:ヒーターフィルター
80:プラグ
81:第1の樹脂カバー
81a:第1の樹脂カバーの先端部
90:ソケット
91:第2の樹脂カバー
91a:第2の樹脂カバーの先端部
91b:吊下げ部
92:第3の樹脂カバー
S:隙間
E:ドライエアーの循環経路
Claims (8)
- ソケットとプラグとが嵌合された給電部と、
前記給電部を覆い、該給電部をシールするカバー構造と、
前記カバー構造内にドライエアー又は不活性ガスを供給する供給機構と、を有し、
前記ドライエアー又は不活性ガスは、前記給電部と前記カバー構造との間の隙間を通って前記カバー構造の内部に供給される、
給電部カバー構造。 - 前記ソケットは、静電チャックに取り付けられ、前記プラグは、ヒーターフィルターに取り付けられる、
請求項1に記載の給電部カバー構造。 - 前記ソケットは、前記静電チャックに対してスライド可能に支持されている、
請求項1又は2に記載の給電部カバー構造。 - 前記カバー構造は、前記ソケットをカバーする第1のカバー構造及び前記プラグをカバーする第2のカバー構造を有する、
請求項1〜3のいずれか一項に記載の給電部カバー構造。 - 前記第1のカバー構造及び前記第2のカバー構造の少なくともいずれかの先端部は、テーバー形状に形成される、
請求項4に記載の給電部カバー構造。 - 前記第1のカバー構造及び前記第2のカバー構造の少なくともいずれかは、絶縁体で構成される、
請求項4又は5に記載の給電部カバー構造。 - 前記第1のカバー構造及び前記第2のカバー構造は、樹脂で構成される、
請求項4〜6のいずれか一項に記載の給電部カバー構造。 - 載置台上の静電チャックと、
前記静電チャックに設けられたヒーターと、
前記ヒーターに接続される給電部を有する給電部カバー構造と、
前記ヒーターに電流を供給する電源と、を備え、
前記給電部カバー構造は、
ソケットとプラグとが嵌合された前記給電部と、
前記給電部を覆い、該給電部を密閉するカバー構造と、
前記カバー構造内にドライエアー又は不活性ガスを供給する供給機構と、を有し、
前記ドライエアー又は不活性ガスは、前記給電部と前記カバー構造との間の隙間を通って前記カバー構造の内部に供給される、
半導体製造装置。
Priority Applications (4)
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JP2014014607A JP6312451B2 (ja) | 2014-01-29 | 2014-01-29 | 給電部カバー構造及び半導体製造装置 |
US14/597,312 US10374358B2 (en) | 2014-01-29 | 2015-01-15 | Feeder-cover structure and semiconductor production apparatus |
KR1020150010115A KR102334484B1 (ko) | 2014-01-29 | 2015-01-21 | 전력공급부 커버 구조체 및 반도체 제조 장치 |
TW104102039A TWI644392B (zh) | 2014-01-29 | 2015-01-22 | Power supply unit cover structure and semiconductor manufacturing device |
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JPWO2016167224A1 (ja) * | 2015-04-15 | 2018-01-18 | 株式会社アルバック | 吸着装置、真空処理装置 |
JP2019186361A (ja) * | 2018-04-09 | 2019-10-24 | 東京エレクトロン株式会社 | 結露防止方法および処理装置 |
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KR102334484B1 (ko) | 2021-12-02 |
JP6312451B2 (ja) | 2018-04-18 |
US20150214653A1 (en) | 2015-07-30 |
TW201535584A (zh) | 2015-09-16 |
US10374358B2 (en) | 2019-08-06 |
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