JP2015132516A - Electric current detection structure - Google Patents

Electric current detection structure Download PDF

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JP2015132516A
JP2015132516A JP2014003475A JP2014003475A JP2015132516A JP 2015132516 A JP2015132516 A JP 2015132516A JP 2014003475 A JP2014003475 A JP 2014003475A JP 2014003475 A JP2014003475 A JP 2014003475A JP 2015132516 A JP2015132516 A JP 2015132516A
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bus bar
current
detection structure
electric current
bypass
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池田 幸雄
Yukio Ikeda
幸雄 池田
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Proterial Ltd
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Hitachi Metals Ltd
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Abstract

PROBLEM TO BE SOLVED: To provide an electric current detection structure capable of accurately detecting electric current flowing in a bus bar.SOLUTION: An electric current detection structure includes: a bus bar 2 for flowing electric current in a longitudinal direction; and a magnetic detection element 3 for measuring the intensity of a magnetic field generated by electric current flowing in the bus bar 2. The electric current detection structure includes, in the bus bar 2, an electric current bypass 4 that is formed on the same plane as the bus bar 2 and connects two places of the bus bar 2 in longitudinal directions. The magnetic detection element 3 is arranged near the electric current bypass 4 so as to allow its detection axis D to be in the longitudinal direction of the bus bar 2.

Description

本発明は、電流検出構造に関するものである。   The present invention relates to a current detection structure.

従来より、バスバに流れる電流を検出する際に、検出対象となる電流により発生する磁界の強度を磁気検出素子で検出することが行われている。磁気検出素子により磁界の強度を検出することで、その磁界の強度を基に、バスバに流れる電流を演算により求めることが可能になる。   2. Description of the Related Art Conventionally, when detecting a current flowing through a bus bar, the intensity of a magnetic field generated by a current to be detected is detected by a magnetic detection element. By detecting the strength of the magnetic field by the magnetic detection element, the current flowing through the bus bar can be obtained by calculation based on the strength of the magnetic field.

磁気検出素子としては、MR(Magneto Resistance)センサや、GMR(Giant Magneto Resistive effect)センサが知られている。   As magnetic detection elements, MR (Magneto Resistance) sensors and GMR (Giant Magneto Resistive effect) sensors are known.

なお、この出願の発明に関連する先行技術文献情報としては、特許文献1がある。   In addition, there exists patent document 1 as prior art document information relevant to invention of this application.

特許第5153481号公報Japanese Patent No. 5153481

しかしながら、上述の従来の電流検出構造では、例えば3相モータの各相に流れる電流を検出する場合には、磁気検出素子が検出対象以外のバスバを流れる電流により発生した磁界の影響を受けてしまい、検出対象のバスバに流れる電流を精度よく検出することが困難になる、という問題があった。   However, in the above-described conventional current detection structure, for example, when detecting a current flowing through each phase of a three-phase motor, the magnetic detection element is affected by a magnetic field generated by a current flowing through a bus bar other than the detection target. There is a problem that it is difficult to accurately detect the current flowing through the detection target bus bar.

そこで、本発明の目的は、上記課題を解決し、バスバに流れる電流を精度よく検出することが可能な電流検出構造を提供することにある。   Therefore, an object of the present invention is to solve the above-described problems and provide a current detection structure that can accurately detect a current flowing through a bus bar.

本発明は上記目的を達成するために創案されたものであり、長手方向に沿って電流を流すバスバと、該バスバを流れる電流により発生する磁界の強度を測定する磁気検出素子と、を備えた電流検出構造であって、前記バスバと同一平面上に形成され、前記バスバの長手方向の2箇所を接続する電流迂回路を前記バスバに形成し、前記磁気検出素子を、前記電流迂回路の近傍に配置すると共に、その検出軸が前記バスバの長手方向に沿うように配置した電流検出構造である。   The present invention has been devised to achieve the above object, and includes a bus bar for passing a current along the longitudinal direction, and a magnetic detection element for measuring the strength of a magnetic field generated by the current flowing through the bus bar. A current detection structure, which is formed on the same plane as the bus bar, forms a current bypass circuit in the bus bar that connects two locations in the longitudinal direction of the bus bar, and the magnetic detection element is located in the vicinity of the current bypass circuit And a current detection structure in which the detection axis is arranged along the longitudinal direction of the bus bar.

前記磁気検出素子が、GMRセンサであってもよい。   The magnetic detection element may be a GMR sensor.

前記電流迂回路は、前記バスバの一側から側方に突出するように形成されていてもよい。   The current bypass may be formed to protrude laterally from one side of the bus bar.

前記バスバの側方に開口する切欠きを形成し、該切欠き内に前記電流迂回路を形成してもよい。   A notch that opens to the side of the bus bar may be formed, and the current bypass may be formed in the notch.

前記電流迂回路は、前記バスバの幅内に収まるように形成されていてもよい。   The current bypass may be formed so as to be within the width of the bus bar.

本発明によれば、バスバに流れる電流を精度よく検出することが可能な電流検出構造を提供できる。   ADVANTAGE OF THE INVENTION According to this invention, the electric current detection structure which can detect the electric current which flows into a bus bar accurately can be provided.

本発明の一実施形態に係る電流検出構造を示す図であり、(a)は平面図、(b)は斜視図である。It is a figure which shows the electric current detection structure which concerns on one Embodiment of this invention, (a) is a top view, (b) is a perspective view. 図1の電流検出構造の原理を説明する図である。It is a figure explaining the principle of the current detection structure of FIG. 図1の電流検出構造の3相の電流路への適用例を示す平面図である。It is a top view which shows the example of application to the three-phase current path of the current detection structure of FIG. 本発明の一変形例に係る電流検出構造を示す平面図である。It is a top view which shows the electric current detection structure which concerns on one modification of this invention. 本発明の一変形例に係る電流検出構造を示す平面図である。It is a top view which shows the electric current detection structure which concerns on one modification of this invention.

以下、本発明の実施形態を添付図面にしたがって説明する。   Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.

図1は、本実施形態に係る電流検出構造を示す図であり、(a)は平面図、(b)は斜視図である。   1A and 1B are diagrams showing a current detection structure according to the present embodiment, in which FIG. 1A is a plan view and FIG. 1B is a perspective view.

図1(a),(b)に示すように、電流検出構造1は、長手方向に沿って電流を流すバスバ2と、バスバ2を流れる電流により発生する磁界の強度を測定する磁気検出素子3と、を備えている。   As shown in FIGS. 1A and 1B, the current detection structure 1 includes a bus bar 2 that flows current along the longitudinal direction, and a magnetic detection element 3 that measures the strength of a magnetic field generated by the current flowing through the bus bar 2. And.

バスバ2は、板状の導体であり、電流を流す電流路となるものである。磁気検出素子3としては、素子の高さ方向と垂直方向に検出軸Dを有し、高い感度を有するGMRセンサを用いる。   The bus bar 2 is a plate-like conductor and serves as a current path through which a current flows. As the magnetic detection element 3, a GMR sensor having a detection axis D in a direction perpendicular to the height direction of the element and having high sensitivity is used.

さて、本実施形態に係る電流検出構造1では、バスバ2と同一平面上に形成され、バスバ2の長手方向の2箇所を接続する電流迂回路4をバスバ2に形成し、磁気検出素子3を、電流迂回路4の近傍に配置すると共に、その検出軸Dがバスバ2の長手方向に沿うように配置している。   In the current detection structure 1 according to the present embodiment, the current bypass circuit 4 that is formed on the same plane as the bus bar 2 and connects two locations in the longitudinal direction of the bus bar 2 is formed in the bus bar 2, and the magnetic detection element 3 is provided. In the vicinity of the current bypass 4, the detection axis D is arranged along the longitudinal direction of the bus bar 2.

電流迂回路4は、バスバ2の一側から側方に突出するように、バスバ2と一体に形成されている。ここでは、平面視で左右反転したコ字状の電流迂回路4を形成している。   The current bypass 4 is formed integrally with the bus bar 2 so as to protrude from one side of the bus bar 2 to the side. Here, a U-shaped current bypass 4 that is reversed left and right in plan view is formed.

図2に示すように、電流迂回路4を形成することにより、電流迂回路4に電流が流れるようになり、電流に幅方向(図示X方向)の成分が発生することとなる。その結果、この電流の幅方向の成分に起因してバスバ2の長手方向(図示Y方向)の成分を有する磁界が発生する。電流検出構造1では、電流迂回路4を形成することによって発生したバスバ2の長手方向の磁界の強度Byを、磁気検出素子3により測定している。   As shown in FIG. 2, by forming the current bypass 4, a current flows through the current bypass 4, and a component in the width direction (X direction in the drawing) is generated in the current. As a result, a magnetic field having a component in the longitudinal direction (Y direction in the figure) of the bus bar 2 is generated due to the current width component. In the current detection structure 1, the magnetic detection element 3 measures the strength By of the magnetic field in the longitudinal direction of the bus bar 2 generated by forming the current bypass 4.

電流迂回路4で発生させるバスバ2の長手方向の磁界の強度Byは、周囲への影響を抑えるために出来るだけ小さくすることが望ましい。そのため、小さい磁界の強度Byを検出するために、電流迂回路4のできるだけ近くに磁気検出素子3を配置することが望ましい。本実施形態では、平面視において電流迂回路4と重なる位置、より詳細には電流迂回路4の幅方向に延びる辺と重なる位置に、磁気検出素子3を配置している。   The strength By of the magnetic field in the longitudinal direction of the bus bar 2 generated by the current bypass 4 is preferably as small as possible in order to suppress the influence on the surroundings. Therefore, it is desirable to arrange the magnetic detection element 3 as close as possible to the current bypass 4 in order to detect a small magnetic field strength By. In the present embodiment, the magnetic detection element 3 is arranged at a position overlapping the current bypass 4 in plan view, more specifically at a position overlapping a side extending in the width direction of the current bypass 4.

本実施形態では、磁気検出素子3としてGMRセンサを用いているため、小さい磁界も検出可能である。また、GMRセンサは素子の高さ方向と垂直方向に検出軸Dを有していることから、バスバ2と平行に(素子の高さ方向がバスバ2の厚さ方向となるように)磁気検出素子3を配置可能となり、電流検出構造1全体を薄型化することが可能になる。なお、図1では図示省略しているが、磁気検出素子3は、実際には、支持部材によりバスバ2やその周囲の部材等に支持されている。   In this embodiment, since a GMR sensor is used as the magnetic detection element 3, a small magnetic field can be detected. Further, since the GMR sensor has a detection axis D in a direction perpendicular to the height direction of the element, magnetic detection is performed in parallel with the bus bar 2 (so that the height direction of the element is the thickness direction of the bus bar 2). The element 3 can be disposed, and the entire current detection structure 1 can be reduced in thickness. Although not shown in FIG. 1, the magnetic detection element 3 is actually supported by the bus bar 2 and its surrounding members by a support member.

電流検出構造1では、電流迂回路4の幅等を調整することで、電流迂回路4を流れる電流の大きさを調整し、バスバ2の長手方向に発生する磁界の強度、すなわち磁気検出素子3で検出する磁界の強度を容易に調整することが可能になる。電流検出構造1では、磁気検出素子3の感度等に応じて、磁気検出素子3で適切な強度の磁界を検出できるよう設計を行う必要があるが、電流迂回路4を有する構成とすることで、このような設計が比較的容易となる。なお、電流迂回路4は、少なくともその一部が、バスバ2の長手方向に対して交差する方向に形成されている必要があるが、バスバ2の一側から側方に突出するように形成することで、自ずとそのような形状になる。   In the current detection structure 1, the magnitude of the current flowing through the current bypass 4 is adjusted by adjusting the width of the current bypass 4, and the strength of the magnetic field generated in the longitudinal direction of the bus bar 2, that is, the magnetic detection element 3. It is possible to easily adjust the strength of the magnetic field detected by. In the current detection structure 1, it is necessary to design the magnetic detection element 3 so as to detect a magnetic field having an appropriate intensity according to the sensitivity of the magnetic detection element 3. Such a design is relatively easy. The current bypass 4 needs to be at least partially formed in a direction intersecting the longitudinal direction of the bus bar 2 but is formed so as to protrude from one side of the bus bar 2. Thus, it naturally becomes such a shape.

ところで、例えば3相モータの各相に流れる電流を検出する場合では、通常、バスバ2を流れる電流全体により形成される磁界を計測するには、GMRセンサでは感度が高すぎ、他のバスバ2を流れる電流による磁界の影響も受けやすくなるために、そのままで測定を行うことは困難である。本実施形態では、電流迂回路4の幅等を調整することにより、GMRセンサで測定するのに適した磁界の強度に調整し、かつ、バスバ2の長手方向の磁界の強度を測定するように構成することで周囲のバスバ2を流れる電流の影響を抑制しており、これにより、磁気検出素子3として高感度のGMRセンサを用いた場合であっても測定を可能としている。   By the way, when detecting the current flowing through each phase of a three-phase motor, for example, in order to measure the magnetic field formed by the entire current flowing through the bus bar 2, the GMR sensor is too sensitive, Since it becomes easy to be affected by the magnetic field due to the flowing current, it is difficult to perform the measurement as it is. In the present embodiment, by adjusting the width of the current bypass 4 or the like, the magnetic field strength suitable for measurement by the GMR sensor is adjusted, and the magnetic field strength in the longitudinal direction of the bus bar 2 is measured. By configuring, the influence of the current flowing through the surrounding bus bar 2 is suppressed, thereby enabling measurement even when a highly sensitive GMR sensor is used as the magnetic detection element 3.

図3に示すように、電流検出構造1は、例えば、3相の各相の電流を測定する際に用いられる。3相の各相の電流路となる3つのバスバ2は、その幅方向に離間して整列配置されており、それぞれのバスバ2に電流迂回路4が形成され、磁気検出素子3が配置されている。各バスバ2で電流迂回路4を形成したことにより発生するバスバ2の長手方向の磁界は、互いに干渉することがなく、各磁気検出素子3が他のバスバ2の電流で発生した磁界の影響を受けることがない。   As shown in FIG. 3, the current detection structure 1 is used, for example, when measuring the current of each of three phases. The three bus bars 2 that form the current paths of the three phases are arranged to be spaced apart from each other in the width direction, current bypass circuits 4 are formed in the respective bus bars 2, and the magnetic detection elements 3 are arranged. Yes. The magnetic field in the longitudinal direction of the bus bar 2 generated by forming the current bypass 4 in each bus bar 2 does not interfere with each other, and each magnetic detection element 3 is affected by the magnetic field generated by the current of the other bus bar 2. I do not receive it.

なお、図3では、各バスバ2の幅方向の同じ側(図示左側)に電流迂回路4を形成しているが、任意のバスバ2において異なる側に電流迂回路4を形成しても構わない。その場合、例えば、図示右側に電流迂回路4を形成したバスバ2と図示左側に電流迂回路4を形成したバスバ2を隣接して配置すると、両者の磁気検出素子3の距離が近くなるので、共通の支持部材を用いて磁気検出素子3を支持させることも可能になる。ただし、両電流迂回路4を近接させ過ぎると相互干渉が発生する場合もあるので、相互干渉を避けるという観点からは、全てのバスバ2において幅方向の同じ側に電流迂回路4を形成することが望ましい。   In FIG. 3, the current bypass 4 is formed on the same side in the width direction of each bus bar 2 (the left side in the drawing), but the current bypass 4 may be formed on a different side in any bus bar 2. . In that case, for example, if the bus bar 2 with the current bypass 4 formed on the right side of the drawing and the bus bar 2 with the current bypass 4 formed on the left side of the drawing are arranged adjacent to each other, the distance between the two magnetic detection elements 3 becomes short. It is also possible to support the magnetic detection element 3 using a common support member. However, mutual interference may occur if the current bypasses 4 are too close together. From the viewpoint of avoiding mutual interference, the current bypasses 4 should be formed on the same side in the width direction in all the bus bars 2. Is desirable.

以上説明したように、本実施形態に係る電流検出構造1では、バスバ2と同一平面上に形成され、バスバの長手方向の2箇所を接続する電流迂回路4をバスバ2に形成し、磁気検出素子3を、電流迂回路4の近傍に配置すると共に、その検出軸Dがバスバ2の長手方向に沿うように配置している。   As described above, in the current detection structure 1 according to this embodiment, the current bypass circuit 4 that is formed on the same plane as the bus bar 2 and connects two locations in the longitudinal direction of the bus bar is formed in the bus bar 2, thereby detecting the magnetic field. The element 3 is disposed in the vicinity of the current bypass 4, and the detection axis D is disposed along the longitudinal direction of the bus bar 2.

このように構成することで、検出対象以外のバスバ2を流れる電流により発生した磁界の影響を受けにくくなり、検出対象のバスバ2に流れる電流を精度よく検出することが可能になる。   With such a configuration, it is difficult to be affected by the magnetic field generated by the current flowing through the bus bar 2 other than the detection target, and the current flowing through the detection target bus bar 2 can be accurately detected.

また、電流迂回路4の幅等を調整することで、磁気検出素子3の感度に応じて適切な強度の磁界を発生させることが可能であり、磁気検出素子3として高感度なGMRセンサを使用可能となる。GMRセンサは、素子の高さ方向と垂直方向に検出軸Dを有しているため、磁気検出素子3をバスバ2と平行に配置することが可能になり、電流検出構造1の薄型化に寄与する。   Further, by adjusting the width of the current bypass 4 or the like, it is possible to generate a magnetic field having an appropriate intensity according to the sensitivity of the magnetic detection element 3, and a highly sensitive GMR sensor is used as the magnetic detection element 3. It becomes possible. Since the GMR sensor has a detection axis D in a direction perpendicular to the height direction of the element, the magnetic detection element 3 can be arranged in parallel with the bus bar 2 and contributes to the thinning of the current detection structure 1. To do.

本発明は上記実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲で種々の変更を加え得ることは勿論である。   The present invention is not limited to the above-described embodiment, and it is needless to say that various modifications can be made without departing from the spirit of the present invention.

例えば、上記実施形態では、平面視で左右反転したコ字状の電流迂回路4を形成する場合を説明したが、これに限らず、図4に示す電流検出構造41のように、円弧状の電流迂回路4を形成してもよく、電流迂回路4の形状は特に限定されない。また、電流迂回路4を複数形成してもよい。   For example, in the above-described embodiment, the case where the U-shaped current bypass circuit 4 reversed left and right in plan view has been described. However, the present invention is not limited to this, and an arc shape like the current detection structure 41 illustrated in FIG. The current bypass 4 may be formed, and the shape of the current bypass 4 is not particularly limited. A plurality of current bypass circuits 4 may be formed.

さらに、上記実施形態では、バスバ2の一側から側方に突出するように電流迂回路4を形成する場合を説明したが、図5に示す電流検出構造51のように、バスバ2の側方に開口する切欠き52を形成し、その切欠き52内に電流迂回路4を形成するようにしてもよい。   Furthermore, in the above-described embodiment, the case where the current bypass 4 is formed so as to protrude from one side of the bus bar 2 has been described. However, like the current detection structure 51 illustrated in FIG. A notch 52 may be formed in the notch 52, and the current bypass 4 may be formed in the notch 52.

このように構成することで、電流迂回路4を、バスバ2の幅内に収まるように形成することが可能となり、バスバ2を設置する際のスペースを小さくし、小型な電流検出構造51を実現できる。   With this configuration, it is possible to form the current bypass 4 so as to be within the width of the bus bar 2, reduce the space for installing the bus bar 2, and realize a small current detection structure 51. it can.

電流検出構造51では、磁気検出素子3も上面視でバスバ2の幅内に収まるように配置可能となるため、小型化の効果は大きい。   In the current detection structure 51, the magnetic detection element 3 can also be arranged so as to be within the width of the bus bar 2 in a top view, so that the effect of miniaturization is great.

1 電流検出構造
2 バスバ
3 磁気検出素子
4 電流迂回路
DESCRIPTION OF SYMBOLS 1 Current detection structure 2 Bus bar 3 Magnetic detection element 4 Current bypass

Claims (5)

長手方向に沿って電流を流すバスバと、該バスバを流れる電流により発生する磁界の強度を測定する磁気検出素子と、を備えた電流検出構造であって、
前記バスバと同一平面上に形成され、前記バスバの長手方向の2箇所を接続する電流迂回路を前記バスバに形成し、
前記磁気検出素子を、前記電流迂回路の近傍に配置すると共に、その検出軸が前記バスバの長手方向に沿うように配置した
ことを特徴とする電流検出構造。
A current detection structure comprising a bus bar for passing a current along the longitudinal direction, and a magnetic detection element for measuring the strength of a magnetic field generated by the current flowing through the bus bar,
Formed on the same plane as the bus bar, forming a current bypass on the bus bar that connects two locations in the longitudinal direction of the bus bar,
The magnetic detection element is arranged in the vicinity of the current bypass, and the detection axis is arranged along the longitudinal direction of the bus bar.
前記磁気検出素子が、GMRセンサである
請求項1記載の電流検出構造。
The current detection structure according to claim 1, wherein the magnetic detection element is a GMR sensor.
前記電流迂回路は、前記バスバの一側から側方に突出するように形成されている
請求項1または2記載の電流検出構造。
The current detection structure according to claim 1, wherein the current bypass is formed to protrude from one side of the bus bar to the side.
前記バスバの側方に開口する切欠きを形成し、該切欠き内に前記電流迂回路を形成した
請求項1または2いずれかに記載の電流検出構造。
The current detection structure according to claim 1, wherein a notch that opens to a side of the bus bar is formed, and the current bypass is formed in the notch.
前記電流迂回路は、前記バスバの幅内に収まるように形成されている
請求項4記載の電流検出構造。
The current detection structure according to claim 4, wherein the current bypass is formed so as to be within a width of the bus bar.
JP2014003475A 2014-01-10 2014-01-10 Electric current detection structure Pending JP2015132516A (en)

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Publication number Priority date Publication date Assignee Title
JP6471826B1 (en) * 2018-10-22 2019-02-20 Tdk株式会社 Current sensor and method of manufacturing bus bar used therefor
JP2020067304A (en) * 2018-10-22 2020-04-30 Tdk株式会社 Current sensor and method of manufacturing bus bar used for the same
CN113574393A (en) * 2019-03-15 2021-10-29 Tdk株式会社 Current sensor

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JP2005031000A (en) * 2003-07-09 2005-02-03 Asahi Kasei Electronics Co Ltd Method of measuring current, and current measuring device
JP2005233692A (en) * 2004-02-17 2005-09-02 Asahi Kasei Electronics Co Ltd Polyphase current detection device
JP2012154831A (en) * 2011-01-27 2012-08-16 Toyota Motor Corp Current sensor
JP2013170878A (en) * 2012-02-20 2013-09-02 Alps Green Devices Co Ltd Current sensor

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JP2005031000A (en) * 2003-07-09 2005-02-03 Asahi Kasei Electronics Co Ltd Method of measuring current, and current measuring device
JP2005233692A (en) * 2004-02-17 2005-09-02 Asahi Kasei Electronics Co Ltd Polyphase current detection device
JP2012154831A (en) * 2011-01-27 2012-08-16 Toyota Motor Corp Current sensor
JP2013170878A (en) * 2012-02-20 2013-09-02 Alps Green Devices Co Ltd Current sensor

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Publication number Priority date Publication date Assignee Title
JP6471826B1 (en) * 2018-10-22 2019-02-20 Tdk株式会社 Current sensor and method of manufacturing bus bar used therefor
JP2020067304A (en) * 2018-10-22 2020-04-30 Tdk株式会社 Current sensor and method of manufacturing bus bar used for the same
JP2020067305A (en) * 2018-10-22 2020-04-30 Tdk株式会社 Current sensor and method of manufacturing bus bar used for the same
CN113574393A (en) * 2019-03-15 2021-10-29 Tdk株式会社 Current sensor

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